@article{TUW-127538, author = {Otto, Gustav and Hobler, Gerhard and Pongratz, Peter and Palmetshofer, L.}, title = {{I}s there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?}, journal = {{N}uclear {I}nstruments {\&} {M}ethods in {P}hysics {R}esearch {S}ection {B}}, year = {2006}, volume = {253}, pages = {227--231}, url = {http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJN-4M87764-3&_user=103677&_coverDate=12%2F31%2F2006&_alid=673728277&_rdoc=1&_fmt=full&_orig=search&_cdi=5315&_sort=d&_docanchor=&view=c&_ct=1&_acct=C000007978&_version=1&_urlVersion=0&_userid=103}, doi = {10.1016/j.nimb.2006.10.031}, keywords = {{I}on-beam-induced interfacial amorphization; {T}ransmission electron microscopy; {M}olecular dynamics simulation} }