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@article{TUW-127538,
    author = {Otto, Gustav and Hobler, Gerhard and Pongratz, Peter and Palmetshofer, L.},
    title = {{I}s there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?},
    journal = {{N}uclear {I}nstruments {\&} {M}ethods in {P}hysics {R}esearch {S}ection {B}},
    year = {2006},
    volume = {253},
    pages = {227--231},
    url = {http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJN-4M87764-3&_user=103677&_coverDate=12%2F31%2F2006&_alid=673728277&_rdoc=1&_fmt=full&_orig=search&_cdi=5315&_sort=d&_docanchor=&view=c&_ct=1&_acct=C000007978&_version=1&_urlVersion=0&_userid=103},
    doi = {10.1016/j.nimb.2006.10.031},
    keywords = {{I}on-beam-induced interfacial amorphization; {T}ransmission electron microscopy; {M}olecular dynamics simulation}
}