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@article{TUW-198022,
    author = {Toledano-Luque, M. and Kaczer, Ben and Roussel, Ph. J. and Franco, J. and Ragnarsson, L. A. and Grasser, Tibor and Groeseneken, G.},
    title = {{D}epth {L}ocalization of {P}ositive {C}harge {T}rapped in {S}ilicon {O}xynitride {F}ield {E}ffect {T}ransistors after {P}ositive and {N}egative {G}ate {B}ias {T}emperature {S}tress},
    journal = {{A}pplied {P}hysics {L}etters},
    year = {2011},
    volume = {98},
    pages = {183506-1--183506-3},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2010/JB2011_Grasser_1.pdf},
    doi = {10.1063/1.3586780}
}