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@inproceedings{TUW-304574,
    author = {Knobloch, Theresia and Illarionov, Yury and Grasser, Tibor},
    title = {{F}inding {S}uitable {G}ate {I}nsulators for {R}eliable 2{D} {F}{E}{T}s},
    booktitle = {2022 {I}{E}{E}{E} {I}nternational {R}eliability {P}hysics {S}ymposium ({I}{R}{P}{S}) : proceedings : {M}arch 27-31, 2022, {D}allas, {T}exas / {I}{E}{E}{E}},
    year = {2022},
    pages = {2A.1-1--2A.1-10},
    isbn = {978-1-6654-7950-9},
    doi = {10.1109/IRPS48227.2022.9764499},
    keywords = {2{D} materials, high-k gate dielectrics, nanoelec-tronics, reliability engineering, semiconductor device reliabilit},
    note = {invited; talk: {I}nternational {R}eliability {P}hysics {S}ymposium ({I}{R}{P}{S}), {D}allas, {U}{S}{A}; 2022-03-27 -- 2022-03-31}
}