Zeitschriftenartikel:
M. Lades, U. Schmid, D. Berz, G. Wachutka, S.T. Sheppard, N. Kaminski, W. Wondrak:
"Numerical Simulation of Implanted Top-Gate 6H-SiC JFET Characteristics";
Materials Science and Engineering B,
Vol. 61-62
(1999),
S. 415
- 418.
Kurzfassung englisch:
A detailed numerical analysis of implanted top-gate 6H-SiC JFET structures was performed revealing the influence of a non-uniform channel doping profile. Based on structural parameters extracted from simulations of the device characteristics at various bias conditions and temperatures, we obtain channel mobility parameters close to Hall data for bulk epitaxial layers.
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/S0921-5107(98)00545-5