Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
S. Klein, S Thilmont, V. Ziegler, U. Prechtel, U. Schmid, H. Seidel:
"High Temperature Stable Rf Mems Switch Based On Tungsten-Titanium";
Vortrag: 15th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 09),
Denver, CO, USA;
21.06.2009
- 25.06.2009; in: "Proceedings of the 15th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 09)",
IEEE,
(2009),
ISBN: 978-1-4244-4193-8;
S. 1409
- 1412.
Kurzfassung englisch:
In this paper we present a high temperature stable, capacitive
RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500°C. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-stateisolation with a moderate pull-in voltage and with high
restoring forces. Measurements of the high frequency performance
in the 20 to 36 GHz range provided good results for insertion loss and isolation.
Schlagworte:
RF MEMS, microswitch, stress, cantilever, electrostatic actuation, temperature stability