Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
A. Stehle, G. Georgiev, V. Ziegler, B. Schönlinner, U. Prechtel, U. Schmid, H. Seidel:
"Broadband Single-Pole Multithrow RF-MEMS Switches for Ka-Band";
Vortrag: German Microwave Conference 2009,
München, D;
16.05.2009
- 18.05.2009; in: "Proceedings of the German Microwave Conference 2009",
IEEE,
(2009).
Kurzfassung englisch:
This paper presents the design, fabrication and RF-characterization of SP3T, SP4T and SP6T RF-MEMS switches. All devices are fabricated on a 200µm thin silicon substrate. The insertion loss of the SP3T is almost constant from 18 - 40 GHz with a value better than -0.5 dB. The SP4T and SP6T show an insertion loss better than -0.9 dB from 18 - 40 GHz. The isolation is better than -17 dB for all switches in almost all switching states from 18- 40GHz. Furthermore, an on-wafer absorbing structure, acting as a quasi 50 LI match is shown, exhibiting a return loss of better than -10 dB for frequencies above 20 GHz.
Schlagworte:
RF-MEMS, microwave switch, SPMT, SP3T, SP4T, SP6T
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/GEMIC.2009.4815911