[Zurück]

S. Klein, C. Comtesse, A. Bittner, H. Seidel, V. Ziegler, U. Prechtel, U. Schmid:
"RF MEMS Switches Based on an Alloy of Aluminum-Silicon-Copper";
Vortrag: SPIE Europe: Microtechnologies for the New Millennium, Dresden, Deutschland; 04.05.2009 - 08.05.2009; in: "Proceedings of SPIE", Society of Photo-Optical Instrumentation Engineers (SPIE), 7362-7366 (2009), 8 S.

In this work we report on the development of electrostatically actuated RF MEMS switches which are based on a one sided clamped cantilever made of two layers of the same alloy of aluminum-silicon-copper. The switches are based on a low-complexity design and are fabricated by conventional sputter deposition and wet etching techniques on oxidized silicon substrates. Due to a well defined intrinsic stress gradient the cantilevers bend away from the substrate surface after release. This deflection allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces, which help to reduce sticking effects. The temperature behavior of the residual stress of each
single layer that are the basis for the switch is investigated up to 400°C. Thereby, the change in stress over temperature as well as stress level in the as-deposited state is strongly dependent on deposition parameters. Furthermore, the change of deflection is evaluated up to 400°C at cantilever-type test structures. Finally, the high frequency performance of the switches was measured in the 23 to 36 GHz range showing good results for isolation and insertion loss.

RF MEMS, microswitch, stress, cantilever, electrostatic actuation, temperature stability, aluminum-siliconcopper

http://dx.doi.org/10.1117/12.821648