B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
IEEE Electron Device Letters, 31 (2010), 5; S. 411 - 413.
http://dx.doi.org/10.1109/LED.2010.2044014Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2010/JB2010_Grasser_2.pdf