N. Neophytou, H. Kosina:
"Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors";
IEEE Electron Device Letters, 33 (2012), 5; S. 652 - 654.
http://dx.doi.org/10.1109/LED.2012.2188879Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2011/JB2012_Neophytou_1.pdf