Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
A. Backes, P Walkoun, F. Patocka, U. Schmid:
"Generation Of A Porous Device Layer On Soi Substrates";
Vortrag: Transducers 2013,
Barcelona, Spain;
16.06.2013
- 20.06.2013; in: "Transducers 2013 - Proceedings",
IEEE,
(2013),
ISBN: 978-1-4673-5983-2;
S. 1048
- 1050.
Kurzfassung englisch:
This article deals with the application of metal
assisted chemical etching on SOI substrates. Besides from
demonstrating the generation of a porous device layer, the
etch behavior after reaching the buried oxide presents new
insights on the etch process itself. The catalyst particle
position over time is derived from scanning electron
micrographs. Also the etch rates for n and p-doped
samples are compared and the impact of illumination on
the porosification is determined. Finally, the etch behavior
after the device layer is fully porosified is discussed, thus
focusing on the catalyst movement during metal assisted
chemical etching.
Schlagworte:
Metal assisted chemical etching, porous silicon, Silicon On Insulator, etch rate.