Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
A. Alamin Dow, H. Lin, C. Popov, U. Schmid, N. Kherani:
"On controlling EBL parameters for nanoelectromechanical resonators fabricated on insulating/semiconducting structures";
Vortrag: 2013 IEEE 5th International Nanoelectronics Conference (INEC),
Resorts World Sentosa, Singapore;
02.01.2013
- 04.01.2013; in: "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)",
IEEE,
CFP13625-USB
(2013),
ISBN: 978-1-4673-4841-6;
S. 318
- 321.
Kurzfassung englisch:
The current work details the development and optimization of the fabrication processes for nanoelectromechanical resonators such as surface and bulk acoustic wave (SAW/BAW) devices that operate in GHz range, specifically based on nano-interdigitated transducers (n-IDTs). The method combines electron-beam lithography (EBL) and lift-off process to fabricate the n-IDTs with finger patterns having line widths of the order of 100 nm on AlN/UNCD(aluminum nitride/ultrananocrystalline diamond) combined structures deposited on crystalline silicon. The widespread availability of this method has led to the study of the combination of processing parameters for both EBL and lift-off for its application in the realization of n-IDTs. The fabricated devices exhibited high frequency range up to 15 GHz with minimum stop-band rejection of 25dB. Excellent filtering response of the devices and the compatibility of fabrication processes with existing manufacturing technologies pave the way towards advanced AlN/UNCD based nano-resonantors.
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/INEC.2013.6466035