[Zurück]

P.M. Mayrhofer, C. Eisenmenger-Sittner, H. Euchner, A. Bittner, U. Schmid:
"Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered ScxAl1-xN thin films";
Applied Physics Letters, 103 (2013).

Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the
piezoelectric properties of AlN. ScxAl1 xN thin films with different Sc concentrations (x¼0 to 0.15)
were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was
applied to investigate the Sc concentration dependent shift of the IR active modes E1(TO) and
A1(TO). These results are compared to ab initio simulations, being in excellent agreement with the
experimental findings. In addition, IR spectroscopy is established as an economical and fast method
to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed
orientations.

http://dx.doi.org/10.1063/1.4850735