G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum, 778-780 (2014), S. 959 - 962.
http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.959Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2013/JB2014_Grasser_1.pdf