N. Ghobadi, M. Pourfath:
"On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors";
Journal of Applied Physics, 116 (2014), 18; S. 1845061 - 1845067.
http://dx.doi.org/10.1063/1.4901584Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2014/JB2014_Pourfath_4.pdf