G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum, 858 (2016), S. 481 - 484.
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.481Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2016/JB2016_grasser_1.pdf