Patente:
J. Konrath, R. Kern, S. Krivec, L Stöber, U. Schmid:
"Methods for Manufacturing a Semiconductor Device Having a non-ohmic Contact Formed between a Semiconductor Material and an Electrically Conductive Contact Layer";
Patent: USA,
Nr. Us 10,199,514,B2;
eingereicht: 09.01.2018,
erteilt: 05.02.2019.
Kurzfassung englisch:
An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a meta! nitride with a nitro gen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.