Patente:
J. Konrath, R. Kern, S. Krivec, U. Schmid, L Stöber:
"Semiconductor Device With Non-Ohmic Contact Between Sic And A Contact Layer Containing Metal Nitride";
Patent: USA,
Nr. Us 10,431,698 B2;
eingereicht: 02.01.2019,
erteilt: 01.10.2019.
Kurzfassung englisch:
According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a meta! nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.