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A. Qerkini, M Vogelsberger, P. Macheiner, W. Grubelnik, H. Ertl, T. Wolbank:
"Estimating the Impact of Pulse Voltage Stress Caused by Modern Power Electronics Technology on Machine Winding Insulation Material´,";
Vortrag: IEEE 2019, Toulouse / France; 27.08.2019 - 30.08.2019; in: "IEEE", A. Qerkini, M Vogelsberger, C. Zöller, M. Joerg, H. Ertl, T. Wolbank (Hrg.); IEEE, Toulouse / France (2019), S. 192 - 197.

In this paper the influence of the voltage step on
the turn-to-turn insulation is investigated when using silicon
carbide (SiC)-MOSFET. As already known, the steep voltage
gradient dv/dt by using of the modern inverter semiconductor
devices leads to additional stress on the stator winding insulation
system, especially the turn-to-turn insulation. The transient
voltage distribution within the stator winding is measured to
determine maximum stress on turn-to-turn insulation.
Changing the values and distribution of the inter-turn
capacitances it is possible to identify the influence of this
parameter on the turn-to-turn insulation stress. Using the
measurement results it is possible to define a maximum
allowable voltage gradient in order to keep the turn-to-turn
insulation within its specified safe operating range.

voltage gradient (dv/dt); insulation; SiC - MOSFET

https://publik.tuwien.ac.at/files/publik_286218.pdf