J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
"NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
IEEE Transactions on Electron Devices, 66 (2019), 11; S. 4692 - 4697.
http://dx.doi.org/10.1109/TED.2019.2941723Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Berens_2.pdf