Publikationsliste für
Gerhard Hobler
E362 - Institut für Festkörperelektronik
als Autorin / Autor bzw. wesentlich beteiligte Person
1996 - 2024
154 Datensätze
Zeitschriftenartikel
-
R.M. Bradley, G. Hobler:
"Second order corrections to the sputter yield of a curved surface";
Journal of Applied Physics,
129
(2021),
194301;
S. 194301-1
- 194301-11.
Zusätzliche Informationen
-
K. Schlueter, K. Nordlund, G. Hobler, M. Balden, F. Granberg, O Flinck, T. F. da Silva, R. Neu:
"Absence of a Crystal Direction Regime in which Sputtering Corresponds to Amorphous Material";
Physical Review Letters,
125
(2020),
225502;
S. 225502-1
- 225502-6.
Zusätzliche Informationen
-
G. Hobler, D. Maciazek, Z. Postawa:
"Ion bombardment induced atom redistribution in amorphous targets: MD versus BCA";
Nuclear Instruments & Methods in Physics Research Section B,
447
(2019),
S. 30
- 33.
-
G. Hobler, K. Nordlund:
"Channeling maps for Si ions in Si: Assessing the binary collision approximation";
Nuclear Instruments & Methods in Physics Research Section B,
449
(2019),
S. 17
- 21.
-
G. Hobler, D. Maciazek, Z. Postawa:
"Crater function moments: Role of implanted noble gas atoms";
Physical Review B,
97
(2018),
155307;
S. 155307-1
- 155307-13.
Zusätzliche Informationen
-
K. Nordlund, G. Hobler:
"Dependence of ion channeling on relative atomic number in compounds";
Nuclear Instruments & Methods in Physics Research Section B,
435
(2018),
S. 61
- 69.
Zusätzliche Informationen
-
H.M. Urbassek, M. Nietiadi, R.M. Bradley, G. Hobler:
"Sputtering of SicGe1−c nanospheres";
Physical Review B,
97
(2018),
155408;
10 S.
Zusätzliche Informationen
-
S. Lindsey, G. Hobler, D. Maciazek, Z. Postawa:
"Simple model of surface roughness for binary collision sputtering simulations";
Nuclear Instruments & Methods in Physics Research Section B,
393
(2017),
S. 17
- 21.
-
G. Hobler, R.M. Bradley, Herbert M. Urbassek:
"Probing the limitations of Sigmund´s model of spatially resolved sputtering using Monte Carlo simulations";
Physical Review B,
93
(2016),
205443;
S. 1
- 17.
-
G. Hobler, M. Nietiadi, R.M. Bradley, Herbert M. Urbassek:
"Sputtering of silicon membranes with nanoscale thickness";
Journal of Applied Physics,
119
(2016),
S. 245105.
-
K. Nordlund, F. Djurabekova, G. Hobler:
"Large fraction of crystal directions leads to ion channeling";
Physical Review B,
94
(2016),
214109;
S. 1
- 20.
-
G. Hobler:
"Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane";
Nuclear Instruments & Methods in Physics Research Section B,
352
(2015),
S. 22
- 26.
-
S. Lindsey, S. Waid, G. Hobler, H. D. Wanzenböck, E. Bertagnolli:
"Inverse modeling of FIB milling by dose profile optimization";
Nuclear Instruments & Methods in Physics Research Section B,
341
(2014),
S. 77
- 83.
-
G. Hobler:
"Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces";
Nuclear Instruments & Methods in Physics Research Section B,
303
(2013),
S. 165
- 169.
-
S. Lindsey, G. Hobler:
"Sputtering of silicon at glancing incidence";
Nuclear Instruments & Methods in Physics Research Section B,
303
(2013),
S. 142
- 147.
-
H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli, E. Platzgummer, H. Löschner:
"Sputter-Redeposition Method for the Fabrication of Automatically Sealed Micro/Nanochannel using FIBs";
International Journal Of Precision Engineering And Manufacturing,
12
(2012),
5;
S. 893
- 898.
-
S. Lindsey, G. Hobler:
"The significance of redeposition and backscattering in nanostructure formation by focused ion beams";
Nuclear Instruments & Methods in Physics Research Section B,
282
(2012),
S. 12
- 16.
-
M. Budil, G. Hobler:
"Topography simulation of sputtering using an algorithm with second order approximation in space";
Nuclear Instruments & Methods in Physics Research Section B,
269
(2011),
S. 1614
- 1618.
-
C. Ebm, G. Hobler, S. Waid, H. D. Wanzenböck:
"Quantitative simulation of ion-beam induced deposition of nanostructures";
Journal of Vacuum Science & Technology B,
29
(2011),
1;
S. 0110311
- 0110315.
-
G. Hobler, D. Kovac:
"Dynamic binary collision simulation of focused ion beam milling of deep trenches";
Nuclear Instruments & Methods in Physics Research Section B,
269
(2011),
S. 1609
- 1613.
-
C. Ebm, G. Hobler, S. Waid, H. D. Wanzenböck:
"Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2";
Journal of Vacuum Science & Technology B,
28
(2010),
5;
S. 946
- 951.
-
C. Ebm, G. Hobler:
"Assessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si";
Nuclear Instruments & Methods B,
267
(2009),
S. 2987
- 2990.
-
C. Ebm, E. Platzgummer, H. Löschner, S. Eder-Kapl, P. Jöchl, M. Kümmel, R. Reitinger, G. Hobler, A. Köck, R. Hainberger, M. Wellenzohn, F. Letzkus, M. Irmscher:
"Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition";
Journal of Vacuum Science & Technology B,
27
(2009),
6;
S. 2668
- 2673.
-
D. Kovac, G. Hobler:
"Amorphous pocket model based on the modified heat transport equation and local lattice collapse";
Nuclear Instruments & Methods B,
267
(2009),
S. 1229
- 1231.
-
H. Kim, G. Hobler:
"Ion Beam Induced Micro/Nano Fabrication: Modeling";
Journal of the Korean Society for Precision Engineering,
24
(2007),
8;
S. 108
- 115.
-
H. Kim, G. Hobler:
"Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication";
Journal of the Korean Society for Precision Engineering,
24
(2007),
10;
S. 109
- 116.
-
H. Kim, G. Hobler, A. Lugstein, E. Bertagnolli:
"Simulation of ion beam induced micro/nano fabrication";
Journal of Micromechanics and Microengineering,
17
(2007),
1178;
S. 1183.
-
H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli:
"Full three-dimensional simulation of focused ion beam micro/nanofabrication";
Nanotechnology,
18
(2007),
S. 2453031
- 2453038.
-
H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli:
"Level set approach for the simulation of focused ion beam processing on the micro/nano scale";
Nanotechnology,
18
(2007),
S. 2653071
- 2653076.
-
H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli:
"Simulation-based approach for the accurate fabrication of blazed grating sturctures by FIB";
Optics Express,
15
(2007),
15;
S. 9444
- 9449.
-
W. MoberlyChan, D. Adams, M. Aziz, G. Hobler, T. Schenkel:
"Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface";
MRS Bulletin,
32
(2007),
S. 424
- 432.
-
G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
"Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results";
Nuclear Instruments & Methods in Physics Research Section B,
255
(2007),
1;
S. 105
- 109.
Zusätzliche Informationen
-
Z. Rong, F. Gao, W. Weber, G. Hobler:
"Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C-SiC";
Journal of Applied Physics,
102
(2007),
S. 1035081
- 1035087.
-
G. Hobler, K. Bourdelle, T. Akatsu:
"Random and channeling stopping power of H in Si below 100keV";
Nuclear Instruments & Methods B,
242
(2006),
S. 617
- 619.
-
D. Kovac, G. Hobler:
"Investigation of the impact of defect models on Monte Carlo simulations of RBS/C spectra";
Nuclear Instruments & Methods B,
249
(2006),
S. 776
- 779.
-
O. Moutanabbir, B. Terreault, M. Chicoine, J. Simpson, T. Zahel, G. Hobler:
"Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale";
Physica B: Condensed Matter,
376
(2006),
S. 36
- 40.
-
G. Otto, G. Hobler, L. Palmetshofer, K. Mayerhofer, K. Piplits, H. Hutter:
"Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements";
Nuclear Instruments & Methods B,
242
(2006),
S. 667
- 669.
-
G. Otto, G. Hobler, P. Pongratz, L. Palmetshofer:
"Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?";
Nuclear Instruments & Methods in Physics Research Section B,
253
(2006),
S. 227
- 231.
Zusätzliche Informationen
-
G. Hobler, G. Kresse:
"Ab initio calculations of the interaction between native point defects in silicon";
Materials Science and Engineering B,
124-125
(2005),
S. 368
- 371.
-
G. Hobler, G. Otto, D. Kovac, L. Palmetshofer, K. Mayerhofer, K. Piplits:
"Multiscale approach for the analysis of channeling profile measurements of ion implantation damage";
Nuclear Instruments & Methods B,
228
(2005),
S. 360
- 363.
-
D. Kovac, G. Otto, G. Hobler:
"Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation";
Nuclear Instruments & Methods B,
228
(2005),
S. 226
- 229.
-
K. Mayerhofer, J. Foisner, K. Piplits, G. Hobler, L. Palmetshofer, H. Hutter:
"Range evaluation in SIMS depth profiles of Er - implantations in silicon";
Applied Surface Science,
252
(2005),
1;
S. 271
- 277.
-
G. Otto, D. Kovac, G. Hobler:
"Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon";
Nuclear Instruments & Methods B,
228
(2005),
S. 256
- 259.
-
G. Hobler, G. Otto:
"Amorphous pocket model for silicon based on molecular dynamics simulations";
Nuclear Instruments & Methods B,
206
(2003),
S. 81
- 84.
-
G. Hobler, G. Otto:
"Status and open problems in modeling of as-implanted damage in silicon";
Materials Science in Semiconductor Processing,
6
(2003),
S. 1
- 14.
-
A. Lugstein, W. Brezna, G. Hobler, E. Bertagnolli:
"Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation";
Journal of Vacuum Science & Technology A,
21
(2003),
5;
S. 1644
- 1648.
-
G. Otto, G. Hobler, K. Gärtner:
"Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation";
Nuclear Instruments & Methods B,
202
(2003),
S. 114
- 119.
-
A. Lugstein, B. Basnar, G. Hobler, E. Bertagnolli:
"Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots";
Journal of Applied Physics,
92
(2002),
7;
S. 4037
- 4042.
-
W. Boxleitner, G. Hobler:
"FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling";
Nuclear Instruments & Methods B,
180
(2001),
S. 125.
-
W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva:
"Simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams";
Nuclear Instruments & Methods B,
175-177
(2001),
S. 102.
-
G. Hobler, G. Betz:
"On the useful range of application of molecular dynamics simulations in the recoil interaction approximation";
Nuclear Instruments & Methods B,
180
(2001),
S. 203.
-
L. Palmetshofer, M. Gritsch, G. Hobler:
"Range of ion-implanted rare earth elements in Si and SiO2";
Materials Science and Engineering B,
B 81
(2001),
S. 83.
-
G. Hobler, L. Pelaz, C.S. Rafferty:
"Dose, energy, and ion species dependence of the effective plus-factor for transient enhanced diffusion";
Journal of the Electrochemical Society,
147
(2000),
S. 3494
- 3501.
-
H.-H. Vuong, Y. Xie, M. Frei, G. Hobler, L. Pelaz, C.S. Rafferty:
"Use of transient enhanced diffusion to tailor boron out-diffusion";
IEEE Transactions on Electron Devices,
47
(2000),
S. 1401
- 1405.
-
G. Hobler, J. Bevk, A. Agarwal:
"Channeling of low-energy implanted ions through the poly-Si gate";
IEEE Electron Device Letters,
20 (7)
(1999),
S. 357
- 359.
-
G. Hobler, L. Pelaz, C.S. Rafferty:
"Continuum treatment of spatial correlation in damage annealing";
Nuclear Instruments & Methods B,
153
(1999),
S. 172
- 176.
-
L. Pelaz, G.H. Gilmer, M. Jaraiz, S.B. Herner, H.-J. Gossmann, D.J. Eaglesham, G. Hobler, C.S. Rafferty, J. Barbolla:
"Modeling of the ion mass effect on transient enhanced diffusion: deviation from the "+1" model";
Applied Physics Letters,
73(10)
(1998),
S. 1421
- 1423.
-
R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu:
"Vertification of "lateral second. ion mass spectrom." as method for measuring lateral dopant dose distr. in me test str.";
Journal of Vacuum Science & Technology B,
B 16(1)
(1998),
S. 386
- 393.
-
G. Hobler, G. Fehlmann:
"A study of ultra-shallow implanted dopant profiles in silicon using BC and MD simulations";
Radiation Effects and Deffects in Solids,
141
(1997),
S. 113
- 125.
-
A.Y. Nikulin, A.W. Stevenson, H. Hashizume, D. Cookson, G. Hobler, S.W. Wilkins:
"Model-Independent determination of 2D strain distribution in ion implanted silicon crystals from x-ray diffraction data";
Semiconductor Science and Technology,
12(3)
(1997),
S. 350
- 354.
-
J. Esfandyari, Ch. Schmeiser, S. Senkader, G. Hobler, B. Murphy:
"Computer simulation of oxygen precipitation in Cz-grown silicon during HI-LO-HI anneals";
Journal of the Electrochemical Society,
143(3)
(1996),
S. 995
- 1001.
-
G. Hobler:
"Critical angles and low-energy limits to ion channeling in silicon";
Radiation Effects and Deffects in Solids,
139
(1996),
S. 21
- 85.
-
G. Hobler:
"Theoretical estimate of the low-energy limit to ion channeling";
Nuclear Instruments & Methods B,
115
(1996),
S. 323
- 327.
-
G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, G. Stingeder:
"Vertification of models for the simulation of boron implantation into crystalline silicon";
Journal of Vacuum Science & Technology B,
B 14(1)
(1996),
S. 272
- 277.
-
S. Senkader, G. Hobler, Ch. Schmeiser:
"Determination of the oxide precipitate-silicon matrix interface energy by consid. the change oft precipitate morphology";
Applied Physics Letters,
69(15)
(1996),
S. 2202
- 2204.
Buchbeiträge
-
H. Kim, G. Hobler:
"Simulation of Focused Ion Beam Milling";
in: "Nanofabrication Using Focused Ion and Electron Beam",
I. Utke, S. Moshkalev, P. Russell (Hrg.);
Oxford University Press,
2012,
ISBN: 9780199734214,
S. 226
- 247.
-
F. Rüdenauer, G. Hobler, J. Mitterauer, H. Koops, L. Palmetshofer, H. Bluhm:
"Ion beam devices for material processing and analysis";
in: "Vacuum Electronics, Components and Devices",
Springer,
Berlin,
2008,
ISBN: 9783540719281,
S. 231
- 263.
Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag)
-
M. Current, G. Hobler, Y. Kawasaki:
"Aspects of Highly-channeled MeV Implants of Dopants in Si(100)";
Vortrag: 19th International Workshop on Junction Technology 2019,
Kyoto, Japan (eingeladen);
06.06.2019
- 07.06.2019; in: "19th International Workshop on Junction Technology 2019",
(2019),
ISBN: 978-4-86348-728-4;
S. 40
- 45.
Zusätzliche Informationen
-
M. Current, G. Hobler, Y. Kawasaki, M. Sugitani:
"Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS";
Vortrag: International Conference on Ion Implantation Technology,
Würzburg;
16.09.2018
- 21.09.2018; in: "22nd International Conference on Ion Implantation Technology",
(2018),
S. 251
- 254.
-
G. Hobler, K. Nordlund, M. Current, W. Schustereder:
"Simulation Study of Al Channeling in 4H-SiC";
Vortrag: International Conference on Ion Implantation Technology,
Würzburg;
16.09.2018
- 21.09.2018; in: "22nd International Conference on Ion Implantation Technology",
(2018),
S. 247
- 250.
-
G. Hobler, D. Maciazek, Z. Postawa, R.M. Bradley:
"Crater function moments: The influence of implanted noble gas atoms";
Vortrag: International Workshop on Nanoscale Pattern Formation at Surfaces,
Helsinki;
26.06.2017
- 30.06.2017; in: "Book of Abstracts",
(2017),
S. 33.
-
G. Hobler, R.M. Bradley, Herbert M. Urbassek:
"Testing Sigmund´s Model of Sputtering";
Hauptvortrag: International Workshop on Nanoscale Pattern Formation at Surfaces,
Krakow, Polen;
12.07.2015
- 16.07.2015; in: "Book of Abstracts",
(2015),
S. 7.
-
S. Waid, H. D. Wanzenböck, G. Hobler, T. Zahel, E. Bertagnolli, M. Mühlberger, R. Schöftner:
"Topography Extraction Of 3d Structures Through Afm Of Nanoimprints";
Vortrag: 9th International Conference on Nanoimprint and Nanoprint,
Kopenhagen;
13.10.2010
- 15.10.2010; in: "9th International Conference on Nanoimprint and Nanoprint",
(2010).
-
C. Ebm, G. Hobler:
"Simulation of Ion-beam Induced Etching and Deposition Using a Non-local Recoil-based Algorithm";
Vortrag: MRS Spring Meeting,
San Francisco;
13.04.2009
- 17.04.2009; in: "MRS online Proceedings library",
(2009),
6 S.
-
G. Hobler, H. Kim:
"3D FIB process simulation for photonic applications";
Vortrag: 1st International Workshop on FIB for Photonics,
Eindhoven, the Netherlands (eingeladen);
13.06.2008
- 14.06.2008; in: "Proceedings of the First International Workshop on FIB for Photonics",
(2008),
ISBN: 978-90-365-2678-4;
S. 8
- 11.
-
T. Zahel, G. Hobler, K. Bourdelle:
"Investigation of defect evolution during hydrogen implantation using kinetic Monte Carlo simulations";
Poster: E-MRS Spring Meeting,
Strasbourg, France;
26.05.2008
- 30.05.2008; in: "Abstracts",
(2008).
-
H. Kim, G. Hobler:
"Analysis of Ion Beam-Solid Interactions for Nano Fabrication";
Vortrag: Autumn Conference of the Korean Society of Precision Engineering,
GangJu, South Korea;
20.10.2005
- 21.10.2005; in: "Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering",
(2005),
S. 581
- 584.
-
H. Kim, G. Hobler, A. Lugstein, E. Bertagnolli:
""AMADEUS" Software for Ion Beam Nano Patterning and Characteristics of Nano Fabrication";
Vortrag: Autumn Conference of the Korean Society of Precision Engineering,
GangJu, South Korea;
20.10.2005
- 21.10.2005; in: "Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering",
(2005),
S. 322
- 325.
-
B. Terreault, M. Chicoine, N. Desrosiers, A. Giguere, G. Hobler, O. Moutanabbir, G. Ross, F. Schiettekatte, P. Simpson, T. Zahel:
"Isotope effects in low-energy ion-induced splitting";
Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices XII,
Quebec City, Canada (eingeladen);
15.05.2005
- 20.05.2005; in: "Silicon-on-Insulator Technology and Devices XII",
(2005),
S. 155
- 166.
-
T. Zahel, G. Otto, G. Hobler:
"Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si";
Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices XII,
Quebec City, Canada;
15.05.2005
- 20.05.2005; in: "Silicon-on-Insulator Technology and Devices XI",
(2005),
S. 179
- 184.
-
T. Zahel, G. Otto, G. Hobler:
"Atomistic Simulation of Hydrogen Implantation for SOI Wafer Production";
Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI),
Granadea, Spanien;
19.01.2005
- 21.01.2005; in: "EUROSOI 2005, Book of Abstracts",
(2005),
S. 35
- 36.
-
G. Hobler:
"Simulation of Focused Ion Beam Milling";
Vortrag: SEM X Int. Congress & Exposition on Experimental and Applied Mechanics,
Costa Mesa, CA;
07.06.2004
- 10.06.2004; in: "Proc. 5th Int. Symp. MEMS and Nanotechnology",
(2004),
S. 46
- 51.
-
G. Hobler, A. Lugstein, W. Brezna, E. Bertagnolli:
"Simulation of focused ion beam induced damage formation in crystalline silicon";
Poster: Materials Research Society Fall Meeting (MRS),
Boston/MA, USA;
01.12.2003
- 05.12.2003; in: "Proceedings of MRS Fall Meeting 2003",
(2004),
6 S.
-
G. Otto, G. Hobler:
"Coupled kinetic Monte Carlo and molecular dynamics simulations of implant damage accumulation in silicon";
Poster: Materials Research Society Fall Meeting (MRS),
Boston/MA, USA;
01.12.2003
- 05.12.2003; in: "Proceedings of MRS Fall Meeting 2003",
(2004),
S. 1
- 6.
-
G. Hobler, V. Moroz:
"Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach";
Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Athens, Greece;
05.09.2001
- 07.09.2001; in: "Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach",
Springer,
(2001),
S. 34
- 37.
-
G. Hobler, C. Murthy:
"Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon";
Vortrag: 13th Int. Conf. Ion Implantation Technology,
Alpbach, Austria;
17.09.2000
- 22.09.2000; in: "In Proceeding 13th Int. Conf. Ion Implantaion Technology,IIT-2000",
(2000),
S. 209
- 212.
-
G. Hobler, V. Moroz:
"Simple formulae for the effective plus-factor for transient enhanced diffusion";
Vortrag: European Solid-State Device Research Conference (ESSDERC),
Cork, Ireland;
11.09.2000
- 13.09.2000; in: "ESSDERC 2000",
Frontier Group,
(2000),
S. 168
- 171.
-
J. Bevk, G. Hobler, D.C. Jacobson, W.M. Mansfield, J. Jackson:
"Dopant profiles in dual-poly gates with buried ultra-low-energy implants";
Vortrag: International Conference on Electronic Materials,
Charlottesville;
01.07.1999; in: "40th Electronic Materials Conf. Tech. Progr.",
(1999),
S. 8.
-
H.-J. Gossmann, C.S. Rafferty, G. Hobler, H.-H. Vuong, D.C. Jacobson:
"Suppression of reverse short channel effect by a buried carbon layer";
Vortrag: IEEE Conference,
Piscataway;
01.07.1999; in: "IEDM Techn. Dig.",
(1999),
S. 725
- 728.
-
G. Hobler, L. Pelaz, C.S. Rafferty:
"Dose, energy and ion species dependence of the effective plusfactor for transient enhanced diffusion";
Vortrag: Process Physics and Modeling in Semiconductor Technology,
Pennington;
01.07.1999; in: "Process Physics and Modeling in Semiconductor Technology",
The Electrochemical Society,
(1999),
S. 75
- 86.
-
G. Hobler, C.S. Rafferty:
"Modeling of (311) defects";
Vortrag: MRS Warrendale,
Warrendale;
01.07.1999; in: "Mat. Res. Soc. Sym. Proceeding",
568
(1999),
S. 123
- 134.
-
J. Bevk, S. Kuehne, H. Vaidya, W.M. Mansfield, G. Hobler:
"Buried ultra-low-energy gate implants for sub 0.25micron CMOS technology";
Vortrag: VLSI,
Berlin;
01.07.1998; in: "Proceeding Symp. VLSI Technology",
(1998),
S. 74
- 75.
-
G. Hobler, C.S. Rafferty, S. Senkader:
"A model of (311) defect evolution based on nucleation theory";
Vortrag: IEEE Conference,
Piscataway;
01.07.1997; in: "Intl. Conf. Simultation of Semiconductor and Devices",
(1997),
S. 73
- 76.
-
G. Hobler, H.-H. Vuong, J. Bevk, A. Agarwal, H.-J. Gossmann, D.C. Jacobson, M. Foad, A. Murrell, Y. Erokhin:
"Modeling of ultra-low-energy boron implantation in silicon";
Vortrag: IEEE Conference,
Piscataway;
01.07.1997; in: "IEDM Techm. Dig.",
(1997),
S. 489
- 492.
-
R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu:
"Vertification of "lateral SIMS" ...";
Vortrag: 4th Int. Workshop on the Measurement...,
Berlin;
01.07.1997; in: "Proc. 4th Int. Workshop on the Measurement, Characterization and Modelling...",
(1997),
S. 22.1
- 22.11.
-
S. Senkader, G. Hobler:
"A kinetic model for precipitation of oxygen in silicon";
Vortrag: NATO ARW,
Dordrecht;
01.07.1996; in: "Early Stages of Oxygen-Precipitation in Silicon, NATO ARW Series",
Kluwer Academic,
(1996),
S. 447
- 454.
-
S. Senkader, G. Hobler, Ch. Schmeiser:
"Modeling and simultation of oxygen precipitation in Si: Precipitate-point defect interactions and influence of hydrogen";
Vortrag: IEEE Conference,
Piscataway;
01.07.1996; in: "SISPAD`96",
(1996),
S. 31
- 32.
Vorträge und Posterpräsentationen (ohne Tagungsband-Eintrag)
-
K. Schlueter, K. Nordlund, M. Balden, T. Silva, G. Hobler, R. Neu:
"Crystal-Orientation-Dependent Sputtering of Tungsten";
Poster: 24th International Conference on Ion Beam Analysis (IBA2019),
Antibes, Frankreich;
13.10.2019
- 18.10.2019.
-
G. Hobler, D. Maciazek, Z. Postawa:
"Ion bombardment-induced atom redistribution in amorphous silicon: MD versus BCA";
Vortrag: International Conference on Simulation of Radiation Effects in Solids,
Shanghai;
17.06.2018
- 22.06.2018.
-
G. Hobler, K. Nordlund:
"Channeling maps: Assessing the binary collision approximation";
Poster: International Conference on Simulation of Radiation Effects in Solids,
Shanghai;
17.06.2018
- 22.06.2018.
-
K. Nordlund, F. Djurabekova, G. Hobler:
"Effect of atom sizes in ionic compounds on channeling: channeling map analysis";
Poster: International Conference on Radiation Effects in Insulators,
Versailles, France;
02.07.2017
- 07.07.2017.
-
G. Hobler, M. Nietiadi, R.M. Bradley, Herbert M. Urbassek:
"Sputtering of silicon membranes with nanoscale thickness";
Vortrag: International Conference on Simulation of Radiation Effects in Solids,
Loughborough, GB;
19.06.2016
- 24.06.2016.
-
S. Lindsey, G. Hobler, D. Maciazek, Z. Postawa:
"Simple model of surface roughness for binary collision sputtering simulations";
Poster: International Conference on Simulation of Radiation Effects in Solids,
Loughborough, GB;
19.06.2016
- 24.06.2016.
-
G. Hobler:
"Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane";
Vortrag: International Conference on Computer Simulation on Radiation Effects in Solids,
Alicante, Spanien;
08.06.2016
- 13.06.2016.
-
H. D. Wanzenböck, S. Waid, G. Hobler, S. Lindsey:
"2.5D-Nanoimprint Lithography";
Poster: NIL Industrial Day,
Linz;
13.03.2014
- 14.03.2014.
-
S. Lindsey, G. Hobler:
"Simulation of Glancing Angle Sputtering with a Density Gradient Model to Represent Surface Roughness";
Vortrag: Particle-surface interactions: from surface analysis to materials processing (PASI),
Luxemburg;
03.06.2013
- 05.06.2013.
-
S. Lindsey, S. Waid, G. Hobler, H. D. Wanzenböck, E. Bertagnolli:
"Inverse Modeling of FIB Milling by Dose Profile Optimization";
Poster: European Materials Research Society (EMRS),
Strasbourg, Frankreich;
27.05.2013
- 31.05.2013.
-
S. Waid, J. Mika, S. Lindsey, H. D. Wanzenböck, G. Hobler, E. Bertagnolli:
"Fabrication of 3D Axon Isolation Channels by Inverse Modelling Assisted Focused Ion Beam Patterning";
Poster: Micro- and Nano-Engineering Conference,
Toulouse, France;
16.09.2012
- 20.09.2012.
-
G. Hobler:
"Molecular dynamics study of atom ejection from an eroding (100)-Si surface";
Vortrag: International Conference on Simulation of Radiation Effects in Solids,
Santa Fe, New Mexico, USA;
24.06.2012
- 29.06.2012.
-
S. Lindsey, G. Hobler:
"Sputtering of Silicon at Glancing Incidence";
Vortrag: International Conference on Simulation of Radiation Effects in Solids,
Santa Fe, New Mexico, USA;
24.06.2012
- 29.06.2012.
-
S. Lindsey, G. Hobler:
"The Role/Relevance/Significance/Implications of Redeposition and Backscattering in Focused Ion Beam Milling/Nanostructure Formation by Focused Ion Beams";
Poster: E-MRS Spring Meeting,
Nice, Frankreich;
09.05.2011
- 13.05.2011.
-
M. Budil, G. Hobler:
"Topography Simulation of Sputtering using an Algorithm with Second Order Approximation in Space";
Vortrag: International Conference on Simulation of Radiation Effects in Solids,
Krakow, Polen;
19.07.2010
- 23.07.2010.
-
G. Hobler:
"Binary Collision Simulation of Focused Ion Beam Milling of Deep Trenches";
Vortrag: International Conference on Simulation of Radiation Effects in Solids,
Krakow, Polen;
19.07.2010
- 23.07.2010.
-
G. Hobler:
"Simulation of Nanostructuring with Focused Ion Beams";
Vortrag: FIB-Workshop,
Wien (eingeladen);
28.06.2010
- 29.06.2010.
-
C. Ebm, M. Budil, G. Hobler:
"oeAssessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si";
Vortrag: 9th International Conference on Simulation of Radiation Effects in Solids,
Beijing, China;
12.10.2008
- 17.10.2008.
-
D. Kovac, G. Hobler:
"oeAmorphous pocket model based on the modified heat transport equation and local lattice collapse";
Vortrag: International Conference on Ion Beam Modification of Materials (IBMM),
Dresden, Deutschland;
31.08.2008
- 05.09.2008.
-
P. Pongratz, G. Otto, G. Hobler, L. Palmetshofer:
"Analysis of Experimental TEM Image Contrast of Amorphous Pockets using Molecular Dynamics Computer Simulations aof Collision Cascades in Silicon";
Vortrag: ICDS -24, 24th International Conference on Defects in Semiconductors,
New Mexico, USA;
22.07.2007
- 27.07.2007.
-
G. Hobler:
"Simulation von Topographie- und Materialmodifikation mittels fokussierter Ionenstrahlen";
Vortrag: Seminar Institut für Allgemeine Physik (IAP),
TU Wien;
19.06.2006.
Zusätzliche Informationen
-
G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
"Comparison of TEM image contrast simulations of amorphous pockets in Si as obtained by molecular dynamics simulations with experimental results";
Vortrag: 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006),
Richland, Washington, USA;
18.06.2006
- 23.06.2006.
-
G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz:
"Verification of MD Results on Amorphous Pockets in Si using TEM Image Contrast Simulations";
Vortrag: 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006),
Richland, Washington, USA;
18.06.2006
- 23.06.2006.
-
O. Moutanabbir, B. Terreault, M. Chicoinec, J. Simpson, T. Zahel, G. Hobler:
"Hydrogen/Deuterium-defect complexes involved in the ion-cutting of Si(001) at the sub-100 nm scale";
Vortrag: International Conference on Defects in Semiconductors,
Awaji Island, Hyogo, Japan (eingeladen);
24.07.2005
- 29.07.2005.
-
G. Hobler, G. Kresse:
"Ab-initio calculations of the interaction between native point defects in silicon";
Vortrag: Materials Research Society Spring Meeting (MRS),
Straßburg, Frankreich;
30.05.2005
- 03.06.2005.
-
G. Hobler:
"Status and open problems in silicon implant damage modeling";
Vortrag: 3rd Int. Meeting Challenges in Predictive Process Simulation,
Prague, Czech Republic;
13.10.2002
- 17.10.2002.
-
G. Hobler, G. Otto:
"Detailed modeling of ion implantation damage in silicon using a binary collision approach with information from molecular dynamics simulations";
Vortrag: IBMM 2002,
Kobe, Japan;
01.09.2002
- 06.09.2002.
-
H. D. Wanzenböck, S. Harasek, G. Hobler, H. Hutter, H. Störi, P. Pongratz, E. Bertagnolli:
"Dielectric nanostructure fabricatio using a focused ion beam";
Vortrag: IBMM 2002,
Kobe, Japan;
01.09.2002
- 06.09.2002.
-
H. D. Wanzenböck, G. Hobler, H. Langfischer, S. Harasek, W. Brezna, J. Smoliner, E. Bertagnolli:
"Characterization of Doping and intermixing effects of focused ion beam processing";
Vortrag: IBMM 2002,
Kobe, Japan;
01.09.2002
- 06.09.2002.
-
G. Otto, G. Hobler, K. Gärtner:
"Defect characterization of 10-200 eV recoil events in silicon using classical molecular dynamcs ";
Vortrag: 6th Int. Conf. Computer Simulation of Radiation Effects in Solids,
Dresden, Deutschland;
23.06.2002
- 27.06.2002.
-
W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva:
"Dynamic simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams";
Vortrag: 12th International Conference Ion Beam Modification of Materials,
Gramado-Canela, Brasil;
03.09.2000
- 08.09.2000.
-
G. Hobler:
"Modeling of Focused Ion Beam Milling";
Vortrag: Bell Laboratories,
Lucent Technologies;
31.07.2000.
-
W. Boxleitner, G. Hobler:
"FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling";
Vortrag: 5th Interanional Conference Computer Simulation of Radiation Effects in Solids,
Penn State University, USA;
24.07.2000
- 28.07.2000.
-
G. Hobler, G. Betz:
"On the useful range of application of molecular dynamics simulations in the recoil interaction approximation";
Vortrag: 5th Interanional Conference Computer Simulation of Radiation Effects in Solids,
Penn State University, USA;
24.07.2000
- 28.07.2000.
-
L. Palmetshofer, M. Gritsch, G. Hobler:
"Range ot ion-implanted rare earth element in Si and Si02";
Poster: Materials Research Society Spring Meeting (MRS),
STrasbourg, France;
31.05.2000
- 02.06.2000.
Patente
-
G. Hobler, M. Mastrapasqua, M.R. Pinto, E. Sangiorgi:
"Monolithically integrated static random access memory device";
Patent: USA,
Nr. 6144073;
eingereicht: 01.11.2000,
erteilt: 07.11.2000.
Dissertationen (eigene und begutachtete)
-
M. Kampl:
"Investigating Hot-Carrier Effects using the Backward Monte Carlo Method";
Betreuer/in(nen), Begutachter/in(nen): H. Kosina, A. Garcia Loureiro, G. Hobler;
Institut für Mikroelektronik,
2019;
Rigorosum: 05.04.2019.
Zusätzliche Informationen
-
S. Lindsey:
"Computer Simulation of FIB Sputtering";
Betreuer/in(nen), Begutachter/in(nen): G. Hobler, P. Pichler;
E362,
2015;
Rigorosum: 17.03.2015.
-
C. Ebm:
"Simulation of ion beam induced etching and deposition";
Betreuer/in(nen), Begutachter/in(nen): G. Hobler, J. Melngailis;
E362,
2010;
Rigorosum: 17.09.2010.
-
T. Zahel:
"Modelling defect formation and evolution during SOI wafer fabrication";
Betreuer/in(nen), Begutachter/in(nen): G. Hobler, H. Cerva;
Institut für Festkörperelektronik,
2009;
Rigorosum: 02.11.2009.
-
D. Kovac:
"Multiscale Modeling of Ion Implantation Damage in Silicon";
Betreuer/in(nen), Begutachter/in(nen): G. Hobler, L. Palmetshofer;
Institut für Festkörperelektronik,
2007;
Rigorosum: 24.04.2007.
-
H. Kim:
"Design, Simulation and Fabrication of Micro/Nano Functional Structures Using ION Beams";
Betreuer/in(nen), Begutachter/in(nen): G. Hobler, H. Kosina;
Institut für Festkörperelektronik,
2007;
Rigorosum: 20.04.2007.
-
G. Otto:
"Multi-method Simulations and Transmission Electron Microscope Investigations of Ion Implantation Damage in Silicon";
Betreuer/in(nen), Begutachter/in(nen): G. Hobler, P. Pongratz;
Institut für Festkörperelektronik,
2005.
Diplom- und Master-Arbeiten (eigene und betreute)
-
T. Zahel:
"Investigation of the isotope effect in hydrogen induced blistering of silicon using kinetic Monte Carlo Simulation";
Betreuer/in(nen): G. Hobler;
Institut für Festkörperelektronik,
2005.
-
G. Fehlmann:
"Untersuchungen von Modellen für die Monte-Carlo-Simulation";
Betreuer/in(nen): G. Hobler;
Institut für Festkörperelektronik,
2000.
-
P. Lampacher:
"Dram-Leseverstärker mit Mismatchkompensation der Entscheidertransistoren";
Betreuer/in(nen): G. Hobler;
Institut für Festkörperelektronik,
1999.
Wissenschaftliche Berichte
-
S. Lindsey, G. Hobler, C. Rue, M. Maazouz:
"Focused Ion Beam Simulation - Investigation of the Curtaining Effect in TEM Sample Preparation";
2012.
-
T. Zahel, G. Hobler:
"IMSIL-kLMC";
2009.
-
T. Zahel, G. Hobler:
"Kinetic Monte Carlo studies of Smart Cut technology in Si: Final report";
2009.
-
P. Beck, G. Hobler, A. Köck, S. Rollet, E. Wachmann, M. Wind:
"RADSI - Radiation Hardness of Silicon Nanostructures, Technical final report";
2008.
-
T. Zahel, G. Hobler:
"Kinetic Monte Carlo studies of Smart Cut technology in Si: Platelet model and influence of He damage on platelet formation";
2008.
-
T. Zahel, G. Hobler:
"Kinetic Monte Carlo studies of Smart Cut technology in Si: The influence of He damage on defects generated by H and He co-implantation";
2008.
-
P. Beck, G. Hobler, E. Wachmann:
"RADSI Progress Report";
2007.
-
G. Hobler:
"IMSIL Code Modification and Calibration for H inplantations into GaN";
2007.
-
G. Hobler, D. Kovac:
"Interim Report on FIBSIM Code Development";
2007.
-
G. Hobler, T. Zahel:
"Kinetic Monte Carlo studies of Smart Cut technology in Si";
2007.
-
W. Boxleitner, G. Hobler:
"High Quality Sample Operation for Nanometric Analysis and Testing Equipments";
2000.