Publications in Scientific Journals
W. Bakalski, W. Simbürger, R. Thüringer, A. Vasylyev, A.L. Scholtz:
"A Fully Integrated 5.3-GHz 2.4-V 0.3-W SiGe Bipolar Power Amplifier With 50- Output";
IEEE Journal of Solid-State Circuits,
Vol. 39
(2004),
7;
1006
- 1014.
W. Perndl, H. Knapp, K. Aufinger, T.F. Meister, W. Simbürger, A.L. Scholtz:
"Voltage-Controlled Oscillators up to 98 GHz in SiGe Bipolar Technology";
IEEE Journal of Solid-State Circuits,
Vol. 39
(2004),
10;
1773
- 1777.
W. Bakalski, N. Ilkov, O. Dernovsek, R. Matz, W. Simbürger, P. Weger, A.L. Scholtz:
"5-6.5GHz LTCC power amplifier module with 0.3W at 2.4V in Si-bipolar";
Electronics Letters,
39
(2003),
4;
375
- 376.
D. Kehrer, G. Steinlesberger, K. Aufinger, H. Tischer, H.D. Wohlmuth, W. Simbürger, A.L. Scholtz:
"Prospects of Microstrip Waveguides in Aluminum and Copper Metallization for High-Frequency Applications";
Revista da Sociedade Brasileira de Telecomunicacoes,
18
(2003),
1;
1
- 9.
A.L. Scholtz, D. Kehrer, M. Tiebout, H.D. Wohlmuth, H. Knapp, M. Wurzer, W. Perndl, M. Rest, C. Kienmayer, R. Thüringer, W. Bakalski, W. Simbürger:
"CMOS and SiGe bipolar circuits for applications up to 110 GHz";
E&I Elektrotechnik und Informationstechnik,
120
(2003),
9;
271
- 275.
W. Bakalski, H. Knapp, W. Simbürger, A.L. Scholtz:
"Baluns for microwave applications - part 1";
VHF Communications,
34
(2002),
181
- 187.
W. Bakalski, H. Knapp, W. Simbürger, A.L. Scholtz:
"Baluns for microwave applications - part 2";
VHF Communications,
34
(2002),
4;
202
- 214.
Talks and Poster Presentations (with Proceedings-Entry)
S. Trotta, H. Knapp, T.F. Meister, K. Aufinger, J. Böck, W. Simbürger, A.L. Scholtz:
"110-GHz static frequency divider in SiGe bipolar technology";
Talk: IEEE Symposium on Compound Semiconductor Integrated Circuit (CSIC),
Palm Springs, CA, USA;
10-30-2005
- 11-02-2005; in: "IEEE Compound Semiconductor Integrated Circuit Symposium",
(2005),
ISBN: 0-7803-9250-7;
291
- 294.
W. Simbürger, K. Aufinger, J. Böck, S. Boguth, D. Kehrer, C. Kienmayer, H. Knapp, T.F. Meister, W. Perndl, M. Rest, C. Sandner, H. Schäfer, R. Schreiter, R. Stengl, R. Thüringer, M. Tiebout, H.D. Wohlmuth, M. Wurzer, A.L. Scholtz:
"Silicon-based RF ICs up to 100GHz: Research Trends and Applications";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT),
Beijing, China (invited);
10-18-2004
- 10-21-2004; in: "7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)",
(2004),
12
- 19.
W. Perndl, W. Wilhelm, H. Knapp, M. Wurzer, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, A.L. Scholtz:
"A 60 GHz Broadband Amplifier in SiGe Bipolar Technology";
Talk: IEEE BCTM Bipolar/Bicmos Circuits and Technology Meeting,
Montreal, Canada;
09-13-2004
- 09-14-2004; in: "Proc. of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting",
(2004),
293
- 296.
C. Kienmayer, R. Thüringer, M. Tiebout, W. Simbürger, A.L. Scholtz:
"An Integrated 17 GHz Front-End for ISM/WLAN Applications in 0.13”m CMOS";
Talk: IEEE Symposium on VLSI Circuits,
Honolulu, Hawaii;
06-17-2004
- 06-19-2004; in: "2004 Symposium on VLSI Circuits",
(2004),
ISBN: 0-7803-8252-8;
12
- 15.
W. Perndl, H. Knapp, M. Wurzer, K. Aufinger, T.F. Meister, J. Böck, W. Simbürger, A.L. Scholtz:
"A low-noise and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology";
Talk: IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
Fort Worth, Texas, USA;
06-06-2004
- 06-08-2004; in: "Digest of Papers of the 2004 IEEE Radio Frequency Integrated Circuits Symposium",
(2004),
47
- 50.
C. Kienmayer, M. Tiebout, W. Simbürger, A.L. Scholtz:
"A Low-Power Low-Voltage NMOS Bulk-Mixer with 20 GHZ Bandwidth in 90 nm CMOS";
Talk: IEEE International Symposium on Circuits and Systems,
Vancouver, Kanada;
05-23-2004
- 05-26-2004; in: "Proceedings of 2004 IEEE International Symposium on Circuits and Systems",
(2004),
385
- 388.
N. Ilkov, W. Bakalski, R. Matz, W. Simbürger, O. Dernovsek, P. Weger:
"A 5 to 6.5 GHz LTCC Power Amplifier Module";
Talk: 36th International Symposium on Microelectronics (IMAPS 2003),
Boston, MA, USA;
11-16-2003
- 11-20-2003; in: "Proceedings of the 36th Symposium on Microelectronics (IMAPS 2003)",
(2003),
1
- 4.
W. Simbürger, D. Kehrer, M. Tiebout, H.D. Wohlmuth, H. Knapp, M. Wurzer, W. Perndl, M. Rest, C. Kienmayer, R. Thüringer, W. Bakalski, A.L. Scholtz:
"CMOS and SiGe Bipolar Circuits for High-Speed Applications";
Talk: European Microwave week 2003, GAAS conference,
München, Deutschland;
10-06-2003
- 10-10-2003; in: "European Microwave Week 2003 Conference Proceedings",
(2003),
297
- 300.
W. Bakalski, A. Vasylyev, W. Simbürger, R. Thüringer, H.D. Wohlmuth, A.L. Scholtz, P. Weger:
"A fully integrated 7-18 GHz Power Amplifier with on-chip output balun in 75 GHz-ft SiGe-Bipolar";
Talk: BCTM 2003 Bipolar BICMOS Circuits and Technology Meeting,
Toulouse, Frankreich;
09-28-2003
- 09-30-2003; in: "BCTM Proceedings",
(2003),
1
- 4.
W. Perndl, H. Knapp, K. Aufinger, T.F. Meister, W. Simbürger, A.L. Scholtz:
"A 98 GHz Voltage Controlled Oscillator in SiGe Bipolar Technology";
Talk: BCTM 2003 Bipolar BICMOS Circuits and Technology Meeting,
Toulouse, Frankreich;
09-28-2003
- 09-30-2003; in: "BCTM Proceedings",
(2003),
1
- 3.
W. Bakalski, W. Simbürger, R. Thüringer, A. Vasylyev, A.L. Scholtz:
"A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-Bipolar Power Amplifier with 50Ω output";
Talk: European Solid-State Circuit Conference,
Estoril, Portugal;
09-16-2003
- 09-18-2003; in: "Proceedings of the 29th European Solid-State Circuits Conference (ESSCIRC 2003)",
(2003),
561
- 564.
W. Bakalski, W. Simbürger, R. Thüringer, H.D. Wohlmuth, A.L. Scholtz:
"A fully integrated 4.8-6 GHz Power Amplifier with on-chip output balun in 38 GHz-ft Si-Bipolar";
Talk: IEEE MTT-S International Microwave Symposium,
Philadelphia, USA;
06-08-2003
- 06-13-2003; in: "IEEE MTT-S International Microwave Symposium Digest",
(2003),
695
- 698.
R. Thüringer, M. Tiebout, W. Simbürger, C. Kienmayer, A.L. Scholtz:
"A 17 GHz Linear 50 ohm Output Driver in 0.12 um Standard CMOS";
Talk: IEEE MTT-S International Microwave Symposium,
Philadelphia, USA;
06-08-2003
- 06-13-2003; in: "IEEE MTT-S International Microwave Symposium Digest",
(2003),
207
- 210.
H.D. Wohlmuth, D. Kehrer, R. Thüringer, W. Simbürger:
"A 17 GHz Dual Modulus Prescaler in 120 nm CMOS ";
Talk: IEEE MTT-S International Microwave Symposium,
Philadelphia, USA;
06-08-2003
- 06-13-2003; in: "IEEE MTT-S International Microwave Symposium Digest",
(2003),
479
- 482.
W. Bakalski, W. Simbürger, R. Thüringer, M. Rest, C. Ahrens, C. Kühn, A.L. Scholtz:
"A Monolithic 2.45GHz Power Amplifier in SiGe-Bipolar with 0.4W Output and 53% PAE at 2V";
Talk: European Solid-State Circuit Conference,
Firenze, Italy;
09-24-2002
- 09-26-2002; in: "Proc. of the 28th European Solid-State Circuit Conference",
(2002),
223
- 226.
H.D. Wohlmuth, D. Kehrer, W. Simbürger:
"A Static 4:1 Frequency Divider up to 16GHz in 120nm CMOS";
Talk: International Telecommunications Symposium (ITS),
Natal/RN, Brazil;
09-08-2002
- 09-12-2002; in: "ITS 2002 International Telecommunications Symposium",
(2002),
1
- 4.
W. Bakalski, W. Simbürger, H. Knapp, H.D. Wohlmuth, A.L. Scholtz:
"Lumped and Distributed Lattice-type LC-Baluns";
Talk: IEEE MTT-S International Microwave Symposium,
Seattle, Washington;
06-02-2002
- 06-07-2002; in: "2002 IEEE MTT-S International Microwave Symposium Digest",
(2002),
209
- 212.
W. Bakalski, W. Simbürger, D. Kehrer, H.D. Wohlmuth, M. Rest, A.L. Scholtz:
"A Monolithic 2.45GHz, 0.56W Power Amplifier with 45% PAE at 2.4V in Standard 25GHz FT Si-Bipolar";
Talk: IEEE Int. Symposium on Circuits and Systems,
Phoenix-Scottsdale, AZ, USA;
05-26-2002
- 05-29-2002; in: "2002 IEEE International Symposium on Circuits and Systems",
(2002),
803
- 806.
W. Simbürger, W. Bakalski, D. Kehrer, H.D. Wohlmuth, M. Rest, K. Aufinger, A.L. Scholtz:
"A Monolithic 5.8GHz Power Amplifier in a 25GHz FT Silicon Bipolar Technology";
Talk: The European Gallium Arsenide and related III-V Compounds Application Symposium,
London;
09-24-2001
- 09-25-2001; in: "GaAs 2001",
(2001),
211
- 214.
D. Kehrer, W. Simbürger, H.D. Wohlmuth, A.L. Scholtz:
"Modeling of Monolithic Lumped Planar Transformers up to 20GHz";
Talk: IEEE Custom Integrated Circuits Conference,
San Diego, Cal.;
05-06-2001
- 05-09-2001; in: "Procedings of the IEEE 2001 Custom Integrated Circuits Conference",
(2001),
401
- 404.
W. Simbürger, D. Kehrer, A. Heinz, H.D. Wohlmuth, M. Rest, K. Aufinger, A.L. Scholtz:
"Monolithic transformer-coupled RF power amplifiers in Si-Bipolar";
Talk: Workshop on Advances in Analog Circuit Design,
Noordwijk, The Netherlands;
04-24-2001
- 04-26-2001; in: "10th Workshop on Advances in Analog Circuit Design AACD 2001",
(2001),
322
- 341.
H.D. Wohlmuth, W. Simbürger, H. Knapp, A.L. Scholtz:
"2GHz Meißner VCO in Si Bipolar Technology";
Talk: European Microwave Conference 1999,
München, Germany;
10-01-1999
- 10-05-1999; in: "29th European Microwave Conference",
(1999),
190
- 193.
Talks and Poster Presentations (without Proceedings-Entry)
W. Simbürger, M. Rigato, C. Fleury, D. Pogany, J. Willemen, V. Vendt, T. Schwingshackl, A. DŽArbonneau:
"ESD Protection Devices and Technologies: Recent Advances and Trends";
Talk: International Electrostatic Discharge workshop (IEW),
Tutzing, Deutschland;
05-17-2016.
M. Rigato, C. Fleury, D. Pogany, W. Simbürger:
"Transient interferometric mapping technique (TIM): an effective tools to understand ESD and device breakdown";
Poster: Infineon University Evening 2015,
Neubiberg, Germany;
11-12-2015.
Diploma and Master Theses (authored and supervised)
H. Lauffer:
"Intermodulationsfestes Empfangsmodul für Basisstationen im 900 MHz Band";
Supervisor: W. Simbürger;
Institut für Nachrichtentechnik und Hochfrequenztechnik,
2004.