N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
"Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
Journal of Vacuum Science & Technology B, 14 (1996), 1; 224 - 230.
http://dx.doi.org/10.1116/1.589033Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_1996/JB1996_Khalil_1.pdf