Talks and Poster Presentations (with Proceedings-Entry):
M. Hofbauer, K. Schweiger, H. Zimmermann, U. Giesen, F. Langner, U. Schmid, A. Steininger:
"Supply Voltage Dependent On-chip Single Event Transient Pulse Shape Measurements in 90 nm Bulk CMOS under Alpha Irradiation";
Poster: 21st European Conference on Radiation and its Effects on Components and Systems (RADECS'12),
Biarritz, FRANCE;
2012-09-24
- 2012-09-28; in: "Proceedings 21st European Conference on Radiation and its Effects on Components and Systems (RADECS'12)",
(2012).
English abstract:
Direct on-chip pulse shape measurements of single event transients (SETs) in a single inverter in 90 nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB) in Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights and widths could be observed.