M. Rigato, C. Fleury, B. Schwarz, M. Mergens, S. Bychikhin, W. Simbürger, D. Pogany:
"Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology";
IEEE Transactions on Electron Devices, 65 (2018), 3; S. 829 - 837.
http://dx.doi.org/10.1109/TED.2018.2789941Elektronische Version der Publikation:
http://publik.tuwien.ac.at/files/publik_268593.pdf