Publications in Scientific Journals:
Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
"Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
2D Materials,
6
(2019),
4;
045004.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/2053-1583/ab28f2
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2019_Illarionov_2.pdf