[Zurück]

@inproceedings{TUW-107732,
    author = {Pourfath, Mahdi and Ungersb{\"o}ck, Stephan Enzo and Gehring, Andreas and Cheong, Byoung-Ho and Kosina, Hans and Selberherr, Siegfried},
    title = {Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors},
    booktitle = {Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)},
    year = {2004},
    pages = {149--152},
    publisher = {Springer},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2005/CP2004_Pourfath_2.pdf},
    isbn = {3211224688},
    doi = {10.1007/978-3-7091-0624-2{\_}35},
    note = {Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 -- 2004-09-04}
}



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