[Zurück]

@inproceedings{TUW-107738,
    author = {Ayalew, Tesfaye and Grasser, Tibor and Kosina, Hans and Selberherr, Siegfried},
    title = {Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in {$\alpha$}-SiC Devices},
    booktitle = {Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)},
    year = {2004},
    pages = {295--298},
    publisher = {Springer},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2005/CP2004_Ayalew_6.pdf},
    isbn = {3211224688},
    doi = {10.1007/978-3-7091-0624-2{\_}69},
    note = {Posterpr{\"a}sentation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 -- 2004-09-04}
}



Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.