[Back]

@inproceedings{TUW-107738,
    author = {Ayalew, Tesfaye and Grasser, Tibor and Kosina, Hans and Selberherr, Siegfried},
    title = {{Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in {$\alpha$}-SiC Devices}},
    booktitle = {{P}roceedings of the 9th {I}nternational {C}onference on {S}imulation of {S}emiconductor {P}rocesses and {D}evices ({S}{I}{S}{P}{A}{D})},
    year = {2004},
    pages = {295--298},
    publisher = {{S}pringer},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2005/CP2004_Ayalew_6.pdf},
    isbn = {3211224688},
    doi = {10.1007/978-3-7091-0624-2{\_}69},
    note = {poster presentation: {I}nternational {C}onference on {S}imulation of {S}emiconductor {P}rocesses and {D}evices ({S}{I}{S}{P}{A}{D}), {M}unich, {G}ermany; 2004-09-02 -- 2004-09-04}
}



Created from the Publication Database of the Vienna University of Technology.