author = {Franco, J. and Kaczer, Ben and Eneman, G. and Mitard, J. and Stesmans, A. and Afanas'Ev, V. and Kauerauf, T. and Roussel, Ph. J. and Toledano-Luque, M. and Cho, M. and Degraeve, R. and Grasser, Tibor and Ragnarsson, L. A. and Witters, L. and Tseng, J. and Takeoka, S. and Wang, W.E. and Hoffmann, T.Y. and Groeseneken, G.},
    title = {{6{\AA} EOT Si{$_{45}$}Ge{$_{55}$} pMOSFET with Optimized Reliability (V{$_{DD}$}=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT}},
    booktitle = {{P}roceedings of the {I}{E}{E}{E} {I}nternational {E}lectron {D}evices {M}eeting ({I}{E}{D}{M})},
    year = {2010},
    pages = {70--73},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2010/FRANCO10B.pdf},
    doi = {10.1109/IEDM.2010.5703292},
    note = {talk: {I}{E}{E}{E} {I}nternational {E}lectron {D}evices {M}eeting ({I}{E}{D}{M}), {S}an {F}rancisco, {C}{A}, {U}{S}{A}; 2010-12-06 -- 2010-12-08}

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