author = {Franco, J. and Kaczer, Ben and Eneman, G. and Roussel, Ph. J. and Cho, M. and Mitard, J. and Witters, L. and Hoffmann, T.Y. and Groeseneken, G. and Crupi, F. and Grasser, Tibor},
    title = {{On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si{$_{0.45}$}Ge{$_{0.55}$} pMOSFETs}},
    booktitle = {{P}roceedings of the {I}nternational {R}eliability {P}hysics {S}ymposium ({I}{R}{P}{S})},
    year = {2011},
    numpages = {6},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2010/CP2011_Grasser_1.pdf},
    doi = {10.1109/IRPS.2011.5784545},
    note = {talk: {I}nternational {R}eliability {P}hysics {S}ymposium ({I}{R}{P}{S}), {M}onterey; 2011-04-12 -- 2011-04-14}

Created from the Publication Database of the Vienna University of Technology.