author = {Franco, J. and Kaczer, Ben and Toledano-Luque, M. and Roussel, Ph. J. and Hehenberger, Philipp Paul and Grasser, Tibor and Mitard, J. and Eneman, G. and Hoffmann, T.Y. and Groeseneken, G.},
    title = {{On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si{$_{0.45}$}Ge{$_{0.55}$} pMOSFETs}},
    journal = {{M}icroelectronic {E}ngineering},
    year = {2011},
    volume = {88},
    number = {7},
    pages = {1388--1391},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2011/JB2011_Hehenberger_1.pdf},
    doi = {10.1016/j.mee.2011.03.065}

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