[Zurück]

@inproceedings{TUW-238795,
    author = {Wimmer, Yannick and Tyaginov, S. E. and Rudolf, Florian and Rupp, Karl and Bina, Markus and Enichlmair, H. and Park, J.M. and Minixhofer, R. and Ceric, Hajdin and Grasser, Tibor},
    title = {Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors},
    booktitle = {2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)},
    year = {2014},
    pages = {58--62},
    publisher = {IEEE},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2014/CP2014_Wimmer_1.pdf},
    isbn = {978-1-4799-7308-8},
    doi = {10.1109/IIRW.2014.7049511},
    note = {Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 -- 2014-10-16}
}



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