[Zurück]

@inproceedings{TUW-239510,
    author = {Sharma, Prateek and Tyaginov, S. E. and Wimmer, Yannick and Rudolf, Florian and Rupp, Karl and Bina, Markus and Enichlmair, H. and Park, J.M. and Ceric, Hajdin and Grasser, Tibor},
    title = {Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices},
    booktitle = {Proceedings of the 2015 IEEE 27th International Symposium on Power Semiconductor Devices {\&} IC's (ISPSD)},
    year = {2015},
    pages = {389--392},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2014/CP2015_Sharma_2.pdf},
    isbn = {978-1-4799-6259-4},
    doi = {10.1109/ISPSD.2015.7123471},
    note = {Vortrag: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 -- 2015-05-14}
}



Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.