[Zurück]

@inproceedings{TUW-242415,
    author = {Sharma, Prateek and Jech, Markus and Tyaginov, S. E. and Rudolf, Florian and Rupp, Karl and Enichlmair, H. and Park, J.M. and Grasser, Tibor},
    title = {Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach},
    booktitle = {Proceedings of the 20\textsuperscript{th} International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)},
    year = {2015},
    pages = {60--63},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2015/CP2015_Sharma_1.pdf},
    isbn = {978-1-4673-7858-1},
    doi = {10.1109/SISPAD.2015.7292258},
    note = {Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 -- 2015-09-11}
}



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