author = {Kaczer, Ben and Amoroso, S. M. and Hussin, Razaidi and Asenov, A and Franco, J. and Weckx, P. and Roussel, Ph. J. and Rzepa, Gerhard and Grasser, Tibor and Horiguchi, N.},
    title = {{O}n the distribution of the {F}{E}{T} threshold voltage shifts due to individual charged gate oxide defects},
    booktitle = {{P}roceedings of the {I}{E}{E}{E} {I}nternational {I}ntegrated {R}eliability {W}orkshop ({I}{I}{R}{W})},
    year = {2016},
    numpages = {3},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2016/CP_2016_Rzepa_3.pdf},
    isbn = {978-1-5090-4192-3},
    note = {talk: {I}{E}{E}{E} {I}nternational {I}ntegrated {R}eliability {W}orkshop ({I}{I}{R}{W}), {S}tanford {S}ierra {C}onference {C}enter, {S}. {L}ake {T}ahoe, {C}alifornia, {U}{S}{A}; 2016-10-09 -- 2016-10-13}

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