author = {Knobloch, Theresia and Rzepa, Gerhard and Illarionov, Yury and Waltl, Michael and Polyushkin, Dmitry K. and Pospischil, Andreas and Furchi, Marco Mercurio and M{\"u}ller, Thomas and Grasser, Tibor},
    title = {{Impact of Gate Dielectrics on the Threshold Voltage in MoS{$_{2}$} Transistors}},
    booktitle = {{M}eeting {A}bstracts},
    year = {2017},
    publisher = {{E}{C}{S}},
    address = {{M}{A}2017-02(14): 837},
    numpages = {2},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2017/CP2017_Knobloch_1.pdf},
    note = {invited; talk: {M}eeting of the {E}lectrochemical {S}ociety ({E}{C}{S}), {N}ational {H}arbor, {M}aryland, {U}{S}{A}; 2017-10-01 -- 2017-10-05}

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