author = {Illarionov, Yury and Smithe, Kirby K.H. and Waltl, Michael and Knobloch, Theresia and Pop, Eric and Grasser, Tibor},
    title = {{Improved Hysteresis and Reliability of MoS{$_{2}$} Transistors With High-Quality CVD Growth and Al{$_{2}$}O{$_{3}$} Encapsulation}},
    journal = {{I}{E}{E}{E} {E}lectron {D}evice {L}etters},
    year = {2017},
    volume = {38},
    number = {12},
    pages = {1763--1766},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Illarionov_4.pdf},
    doi = {10.1109/LED.2017.2768602}

Created from the Publication Database of the Vienna University of Technology.