author = {Knobloch, Theresia and Rzepa, Gerhard and Illarionov, Yury and Waltl, Michael and Polyushkin, Dmitry K. and Pospischil, Andreas and Furchi, Marco Mercurio and M{\"u}ller, Thomas and Grasser, Tibor},
    title = {{Impact of Gate Dielectrics on the Threshold Voltage in MoS{$_{2}$} Transistors}},
    booktitle = {{S}emiconductors, {D}ielectrics, and {M}etals for {N}anoelectronics 15, {V}ol.80, {N}o.1},
    year = {2017},
    editor = {Misra, D. and De Gendt, S. and Houssa, M. and Kita, K. and Landheer, D.},
    pages = {203--217},
    organization = {{T}he {E}lectrochemical {S}ociety},
    publisher = {{E}{C}{S} {T}ransactions},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Knobloch_2.pdf},
    isbn = {978-1-62332-470-4},
    doi = {10.1149/08001.0203ecst},
    note = {invited}

Created from the Publication Database of the Vienna University of Technology.