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@article{TUW-287100,
    author = {Berens, Judith and Pobegen, Gregor and Rescher, Gerald and Aichinger, T. and Grasser, Tibor},
    title = {{NH{$_{3}$} and NO + NH{$_{3}$} Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability}},
    journal = {{I}{E}{E}{E} {T}ransactions on {E}lectron {D}evices},
    year = {2019},
    volume = {66},
    number = {11},
    pages = {4692--4697},
    url = {http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Berens_2.pdf},
    doi = {10.1109/TED.2019.2941723}
}