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Publikationsliste für Angehörige von
E360 - Institut für Mikroelektronik
als Autorinnen / Autoren bzw. wesentlich beteiligte Personen

3522 Datensätze (1976 - 2022)

Die Publikationen der Fakultät für Elektrotechnik und Informationstechnik sind erst ab dem Jahr 1996 vollzählig in der Publikationsdatenbank enthalten. Publikationen aus den Jahren vor 1996 können, müssen aber nicht in der Datenbank vorhanden sein.


Bücher und Buch-Herausgaben


  1. Autor/in: N. Arora
    Andere beteiligte Person: Siegfried Selberherr, E360

    N. Arora:
    "MOSFET Models for VLSI Circuit Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9249-8, 605 S.

    Zusätzliche Informationen

  2. Autor/innen: W Benger; Rene Heinzl, E360; Wolfgang Kapferer; Wolfram Schoor; Mayank Tyagi; Shalini Venkataraman; Gunther H Weber

    W. Benger, R. Heinzl, W. Kapferer, W. Schoor, M. Tyagi, S. Venkataraman, G.-H. Weber (Hrg.):
    "Proceedings of the 4th High-End Visualization Workshop";
    Lehmann, Berlin, 2007, ISBN: 978-3-86541-216-4; 175 S.

  3. Autor/innen: H.C. DeGraaff; F.M. Klassen
    Andere beteiligte Person: Siegfried Selberherr, E360

    H.C. DeGraaff, F.M. Klassen:
    "Compact Transistor Modeling for Circuit Design";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1990, ISBN: 978-3-7091-9045-6, 351 S.

    Zusätzliche Informationen

  4. Autor/innen: Franz Fasching, E360; Stefan Halama, E360; Siegfried Selberherr, E360

    F. Fasching, S. Halama, S. Selberherr (Hrg.):
    "Technology CAD Systems";
    Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9317-4; 309 S.

    Zusätzliche Informationen

  5. Autor/innen: D.K. Ferry; S.M. Goodnick; Wolfgang Porod; Dragica Vasileska; Josef Weinbub, E360

    D.K. Ferry, S.M. Goodnick, W. Porod, D. Vasileska, J. Weinbub (Hrg.):
    "Book of Abstracts of the 20th International Workshop on Computational Nanotechnology (IWCN)";
    Institute for Microelectronics, TU Wien, Wien, 2019, ISBN: 978-3-9504738-0-3; 162 S.

  6. Autor/innen: D.K. Ferry; Mihail Nedjalkov, E360

    D.K. Ferry, M. Nedjalkov (Hrg.):
    "The Wigner Function in Science and Technology";
    IoP Publishing, Bristol, UK, 2018, ISBN: 978-0-7503-1671-2; 300 S.

    Zusätzliche Informationen

  7. Autor/innen: D.K. Ferry; Josef Weinbub, E360

    D.K. Ferry, J. Weinbub (Hrg.):
    "Booklet of the 1st International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2015, 16 S.

  8. Autor/innen: D.K. Ferry; Josef Weinbub, E360; S.M. Goodnick

    D.K. Ferry, J. Weinbub, S.M. Goodnick (Hrg.):
    "Book of Abstracts of the 3rd International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2019, ISBN: 978-3-9504738-1-0; 56 S.

  9. Autor/innen: Lado Filipovic, E360; Tibor Grasser, E360

    L. Filipovic, T. Grasser (Hrg.):
    "Miniaturized Transistors";
    MDPI, 2019, ISBN: 978-3-03921-010-7; 202 S.

    Zusätzliche Informationen

  10. Autor/innen: Lado Filipovic, E360; Tibor Grasser, E360

    L. Filipovic, T. Grasser (Hrg.):
    "Miniaturized Transistors, Volume II";
    MDPI, Basel, 2022, ISBN: 978-3-0365-4169-3; 352 S.

    Zusätzliche Informationen

  11. Autor/innen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donet

    F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet (Hrg.):
    "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
    Universidad de Granada, Granada, Spain, 2018, ISBN: 978-1-5386-4810-0; 154 S.

  12. Autor/in: Tibor Grasser, E360

    T. Grasser (Hrg.):
    "Advanced Device Modeling and Simulation";
    World Scientific Publishing Co., 2003, ISBN: 9-812-38607-6; 210 S.

  13. Autor/in: Tibor Grasser, E360

    T. Grasser (Hrg.):
    "Bias Temperature Instability for Devices and Circuits";
    Springer Science+Business Media New York, 2013, ISBN: 978-1-4614-7908-6; 810 S.

    Zusätzliche Informationen

  14. Autor/in: Tibor Grasser, E360

    T. Grasser (Hrg.):
    "Hot Carrier Degradation in Semiconductor Devices";
    Springer International Publishing, 2014, ISBN: 978-3-319-08993-5; 517 S.

    Zusätzliche Informationen

  15. Autor/in: Tibor Grasser, E360

    T. Grasser (Hrg.):
    "Noise in Nanoscale Semiconductor Devices";
    Springer Science+Business Media New York, 2020, ISBN: 978-3-030-37499-0; 729 S.

    Zusätzliche Informationen

  16. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr (Hrg.):
    "Simulation of Semiconductor Processes and Devices 2007";
    Springer-Verlag, Wien - New York, Wien, 2007, ISBN: 978-3-211-72860-4; 460 S.

    Zusätzliche Informationen

  17. Autor/in: W. Hänsch
    Andere beteiligte Person: Siegfried Selberherr, E360

    W. Hänsch:
    "The Drift Diffusion Equation and Its Applications in MOSFET Modeling";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1991, ISBN: 978-3-7091-9097-5, 271 S.

    Zusätzliche Informationen

  18. Autor/innen: Sung-Min Hong; A.-T Pham; C. Jungemann
    Andere beteiligte Person: Siegfried Selberherr, E360

    S.-M Hong, A.-T Pham, C. Jungemann:
    "Deterministic Solvers for the Boltzmann Transport Equation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0777-5, 227 S.

    Zusätzliche Informationen

  19. Autor/in: Yury Illarionov, E360

    Yu. Illarionov:
    "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
    Typography of St-Petersburg State Polytechnical University, St. Petersburg, 2014, 20 S.

  20. Autor/innen: Koji Ishibashi; S.M. Goodnick; Siegfried Selberherr, E360; Akira Fujiwara

    K. Ishibashi, S.M. Goodnick, S. Selberherr, A. Fujiwara (Hrg.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2012, ISBN: 978-3-901578-25-0; 100 S.

  21. Autor/innen: C. Jacoboni; P. Lugli
    Andere beteiligte Person: Siegfried Selberherr, E360

    C. Jacoboni, P. Lugli:
    "The Monte Carlo Method for Semiconductor Device Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1989, ISBN: 978-3-7091-7453-1, 356 S.

    Zusätzliche Informationen

  22. Autor/innen: David B. Janes; H. Riechert; Tomoki Machida; J. F. Conley; Josef Weinbub, E360; S.M. Goodnick

    D. Janes, H. Riechert, T. Machida, J. Conley, J. Weinbub, S.M. Goodnick (Hrg.):
    "Innovative Nanoscale Devices and Systems";
    Institute for Microelectronics, TU Wien, Wien, 2019, ISBN: 978-0-578-61722-0; 157 S.

  23. Autor/innen: B. Jonker; Wolfgang Porod; Viktor Sverdlov, E360; Kazuhiko Matsumoto; Siegfried Selberherr, E360; S.M. Goodnick

    B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick (Hrg.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2016, ISBN: 978-3-901578-30-4; 88 S.

  24. Autor/innen: W. Joppich; S. Mijalkovic
    Andere beteiligte Person: Siegfried Selberherr, E360

    W. Joppich, S. Mijalkovic:
    "Multigrid Methods for Process Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9255-9, 309 S.

    Zusätzliche Informationen

  25. Autor/innen: C. Jungemann; Bernd Meinerzhagen
    Andere beteiligte Person: Siegfried Selberherr, E360

    C. Jungemann, B. Meinerzhagen:
    "Hierarchical Device Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2003, ISBN: 978-3-7091-7226-1, 254 S.

    Zusätzliche Informationen

  26. Autor/innen: Kyoung-Youm Kim; Josef Weinbub, E360; Mark Everitt

    K. Kim, J. Weinbub, M. Everitt (Hrg.):
    "Book of Abstracts of the 4th International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2021, ISBN: 978-3-9504738-2-7; 75 S.

  27. Autor/innen: Robert Klima, E360; Siegfried Selberherr, E360

    R. Klima, S. Selberherr:
    "Programmieren in C";
    Springer-Verlag, Wien - New York, Wien, 2003, ISBN: 978-3-211-40514-7; 354 S.

    Zusätzliche Informationen

  28. Autor/innen: Robert Klima, E360; Siegfried Selberherr, E360

    R. Klima, S. Selberherr:
    "Programmieren in C, 2. Auflage";
    Springer-Verlag, Wien - New York, Wien, 2007, ISBN: 978-3-211-72000-4; 366 S.

  29. Autor/innen: Robert Klima, E360; Siegfried Selberherr, E360

    R. Klima, S. Selberherr:
    "Programmieren in C, 3. Auflage";
    Springer-Verlag, Wien - New York, Wien, 2010, ISBN: 978-3-7091-0392-0; 366 S.

    Zusätzliche Informationen

  30. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr (Hrg.):
    "11th International Workshop on Computational Electronics Book of Abstracts";
    Technische Universität Wien, Institut für Mikroelektronik, Wien, 2006, ISBN: 3-901578-16-1; 400 S.

  31. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Programmieren in Fortran";
    Springer, 1993, ISBN: 978-3-211-82446-7.

    Zusätzliche Informationen

  32. Autor/in: Peter A. Markowich
    Andere beteiligte Person: Siegfried Selberherr, E360

    P. Markowich:
    "The Stationary Semiconductor Device Equations";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1986, ISBN: 978-3-211-99937-0, 193 S.

    Zusätzliche Informationen

  33. Autor/innen: J. A. Martino; B.-Y. Nguyen; Francisco Gamiz; H. Ishii; J.-P. Raskin; Siegfried Selberherr, E360; E. Simoen

    J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (Hrg.):
    "Advanced CMOS-Compatible Semiconductor Devices 19";
    ECS Transactions, The Electrochemical Society, Vol.97, No.5, 2020, ISBN: 978-1-62332-604-3; 192 S.

  34. Autor/innen: J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen; A. Yoshino

    J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Hrg.):
    "Advanced CMOS-Compatible Semiconductor Devices 18";
    ECS Transactions, The Electrochemical Society, Vol.85, No.5, 2018, ISBN: 978-1-62332-488-9; 230 S.

  35. Autor/innen: Kazuhiko Matsumoto; B. Jonker; Josef Weinbub, E360; Tomoki Machida; Siegfried Selberherr, E360; S.M. Goodnick

    K. Matsumoto, B. Jonker, J. Weinbub, T. Machida, S. Selberherr, S.M. Goodnick (Hrg.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2017, ISBN: 978-3-901578-31-1; 243 S.

  36. Autor/innen: Gregor Meller, E360; Tibor Grasser, E360

    G. Meller, T. Grasser (Hrg.):
    "Organic Electronics";
    Springer-Verlag, Berlin-Heidelberg, 2009, ISBN: 978-3-642-04537-0; 328 S.

    Zusätzliche Informationen

  37. Autor/innen: N. Mori; Siegfried Selberherr, E360

    N. Mori, S. Selberherr (Hrg.):
    "16th International Workshop on Computational Electronics Book of Abstracts";
    Society for Micro- and Nanoelectronics, 2013, ISBN: 978-3-901578-26-7; 269 S.

  38. Autor/innen: A. Nathan; H. Baltes
    Andere beteiligte Person: Siegfried Selberherr, E360

    A. Nathan, H. Baltes:
    "Microtransducer CAD";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1999, ISBN: 978-3-7091-7321-3, 427 S.

    Zusätzliche Informationen

  39. Autor/innen: Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    M. Nedjalkov, I. Dimov, S. Selberherr (Hrg.):
    "Stochastic Approaches to Electron Transport in Micro- and Nanostructures";
    Birkhäuser Basel, 2021, ISBN: 978-3-030-67916-3; 230 S.

    Zusätzliche Informationen

  40. Autor/innen: Y. Omura; Francisco Gamiz; H. Ishii; J. A. Martino; B.-Y. Nguyen; J.-P. Raskin; Siegfried Selberherr, E360

    Y. Omura, F. Gamiz, H. Ishii, J. A. Martino, B.-Y. Nguyen, J.-P. Raskin, S. Selberherr (Hrg.):
    "Advanced Semiconductor-on-Insulator Technology and Related Physics 15";
    ECS Transactions, The Electrochemical Society, Vol.35, No.5, 2011, ISBN: 978-1-56677-866-4; 333 S.

  41. Autor/innen: Y. Omura; Francisco Gamiz; B.-Y. Nguyen; H. Ishii; J. A. Martino; Siegfried Selberherr, E360; J.-P. Raskin

    Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (Hrg.):
    "Advanced Semiconductor-on-Insulator Technology and Related Physics 16";
    ECS Transactions, The Electrochemical Society, Vol.53, No.5, 2013, ISBN: 978-1-62332-027-0; 220 S.

  42. Autor/innen: Y. Omura; J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen

    Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Hrg.):
    "Advanced CMOS-Compatible Semiconductor Devices 17";
    ECS Transactions, The Electrochemical Society, Vol.66, No.5, 2015, ISBN: 978-1-62332-238-0; 365 S.

  43. Autor/innen: Vassil Palankovski, E360; Rüdiger Quay, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    V. Palankovski, R. Quay:
    "Analysis and Simulation of Heterostructure Devices";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7193-6, 309 S.

    Zusätzliche Informationen

  44. Autor/in: Peter Pichler
    Andere beteiligte Person: Siegfried Selberherr, E360

    P. Pichler:
    "Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7204-9, 554 S.

    Zusätzliche Informationen

  45. Autor/innen: Lukas Polok; Masha Sosonkina; William I. Thacker; Josef Weinbub, E360

    L. Polok, M. Sosonkina, W.I. Thacker, J. Weinbub (Hrg.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, San Diego, CA, USA, 2017, ISBN: 978-1-5108-3822-2; 192 S.

  46. Autor/in: Mahdi Pourfath, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    M. Pourfath:
    "The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2014, ISBN: 978-3-7091-1800-9, 256 S.

    Zusätzliche Informationen

  47. Autor/in: Rüdiger Quay, E360
    Andere beteiligte Personen: R. Hull; R.M. Osgood; J. Parisi; H. Warlimont

    R. Quay:
    "Gallium Nitride Electronics";
    in Buchreihe "Materials Science", Buchreihen-Herausgeber: R. Hull, R.M. Osgood, J. Parisi, H. Warlimont; Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-3-540-71890-1, 469 S.

    Zusätzliche Informationen

  48. Autor/in: Andreas Schenk
    Andere beteiligte Person: Siegfried Selberherr, E360

    A. Schenk:
    "Advanced Physical Models for Silicon Device Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1998, ISBN: 978-3-7091-7334-3, 349 S.

    Zusätzliche Informationen

  49. Autor/in: D. Schroeder
    Andere beteiligte Person: Siegfried Selberherr, E360

    D. Schroeder:
    "Modelling of Interface Carrier Transport for Device Simulation";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 1994, ISBN: 978-3-7091-7368-8, 221 S.

    Zusätzliche Informationen

  50. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Analysis and Simulation of Semiconductor Devices";
    Springer-Verlag, Wien - New York, 1984, ISBN: 978-3-7091-8754-8; 294 S.

    Zusätzliche Informationen

  51. Autor/in: Siegfried Selberherr, E360

    S. Selberherr (Hrg.):
    "Two Dimensional Modeling of MOS Transistors";
    Semiconductor Physics, Inc., Auszug aus der Dissertation in englischer Sprache, 1981, 146 S.

  52. Autor/innen: Siegfried Selberherr, E360; Hannes Stippel, E360; Rudolf Strasser, E360

    S. Selberherr, H. Stippel, R. Strasser (Hrg.):
    "Simulation of Semiconductor Devices and Processes, Vol.5";
    Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-7372-5; 504 S.

    Zusätzliche Informationen

  53. Autor/in: Viktor Sverdlov, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    V. Sverdlov:
    "Strain-Induced Effects in Advanced MOSFETs";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0381-4, 252 S.

    Zusätzliche Informationen

  54. Autor/innen: Viktor Sverdlov, E360; Sorin Cristoloveanu, IMEP; Francisco Gamiz; Siegfried Selberherr, E360

    V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr (Hrg.):
    "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
    IEEE, 2016, ISBN: 978-1-4673-8608-1; 272 S.

  55. Autor/innen: Viktor Sverdlov, E360; Francisco Gamiz; Sorin Cristoloveanu, IMEP; Siegfried Selberherr, E360

    V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr (Hrg.):
    "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
    Society for Micro- and Nanoelectronics, 2016, ISBN: 978-3-901578-29-8; 166 S.

  56. Autor/innen: Viktor Sverdlov, E360; B. Jonker; Koji Ishibashi; S.M. Goodnick; Siegfried Selberherr, E360

    V. Sverdlov, B. Jonker, K. Ishibashi, S.M. Goodnick, S. Selberherr (Hrg.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2014, ISBN: 978-3-901578-28-1; 84 S.

  57. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr (Hrg.):
    "Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
    Solid-State Electronics, Elsevier, 2017, ISSN: 0038-1101; 206 S.

  58. Autor/innen: J. W. Swart; Siegfried Selberherr, E360; A. A. Susin; J. A. Diniz; N. Morimoto

    J. W. Swart, S. Selberherr, A. A. Susin, J. A. Diniz, N. Morimoto (Hrg.):
    "Microelectronics Technology and Devices - SBMICRO 2008";
    ECS Transactions, The Electrochemical Society, Vol.14, No.1, 2008, ISBN: 978-1-56677-646-2; 661 S.

  59. Autor/innen: Bianka Ullmann, E360; Gerald Artner, E389-02; Irene Hahn, Romer Labs; Philipp Hans, E163-03-2; Heinz Krebs, E163-03-2; Peter Eder-Neuhauser, E389-01; Richard Zemann, E311-01-2

    B. Ullmann, G. Artner, I. Hahn, P. Hans, H. Krebs, P. Eder-Neuhauser, R. Zemann (Hrg.):
    "Proceedings VSS 2016 - Vienna young Scientists Symposium";
    Book of Abstracts, Dipl.Ing. Heinz A. Krebs, 2352 Gumpoldskirchen, 2016, ISBN: 978-3-9504017-2-1; 128 S.

    Zusätzliche Informationen

  60. Autor/in: Michael Waltl, E360

    M. Waltl (Hrg.):
    "Robust Microelectronic Devices";
    MDPI, 2022, ISBN: 978-3-0365-3337-7; 130 S.

    Zusätzliche Informationen

  61. Autor/in: Christoph Wasshuber, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    C. Wasshuber:
    "Computational Single-Electronics";
    in Buchreihe "Computational Microelectronics", Buchreihen-Herausgeber: S. Selberherr; Springer-Verlag, Wien - New York, 2001, ISBN: 978-3-7091-7256-8, 278 S.

    Zusätzliche Informationen

  62. Autor/innen: Layne T. Watson; Masha Sosonkina; William I. Thacker; Josef Weinbub, E360; Karl Rupp, E360

    L.T. Watson, M. Sosonkina, W.I. Thacker, J. Weinbub, K. Rupp (Hrg.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, San Diego, CA, USA, 2018, ISBN: 978-1-5108-6016-2; 154 S.

  63. Autor/innen: Layne T. Watson; Josef Weinbub, E360; Masha Sosonkina; William I. Thacker; Karl Rupp, E360

    L.T. Watson, J. Weinbub, M. Sosonkina, W.I. Thacker, K. Rupp (Hrg.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, Vista, CA, USA, 2015, ISBN: 978-1-5108-0101-1; 242 S.

  64. Autor/innen: Josef Weinbub, E360; Marc Baboulin; William I. Thacker; Lukas Polok; Sanjukta Bhowmick

    J. Weinbub, M. Baboulin, W.I. Thacker, L. Polok, S. Bhowmick (Hrg.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, Vista, CA, USA, 2016, ISBN: 978-1-5108-2318-1; 210 S.

  65. Autor/innen: Josef Weinbub, E360; D.K. Ferry; Irena Knezevic; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    J. Weinbub, D.K. Ferry, I. Knezevic, M. Nedjalkov, S. Selberherr (Hrg.):
    "Book of Abstracts of the 2nd International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2017, ISBN: 978-3-200-05129-4; 51 S.

  66. Autor/innen: Josef Weinbub, E360; B. Jonker; H. Riechert; Tomoki Machida; S.M. Goodnick; Siegfried Selberherr, E360

    J. Weinbub, B. Jonker, H. Riechert, T. Machida, S.M. Goodnick, S. Selberherr (Hrg.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2018, ISBN: 978-3-901578-32-8; 167 S.

  67. Autor/innen: Josef Weinbub, E360; Paul Manstetten, E360; S.M. Goodnick

    J. Weinbub, P. Manstetten, S.M. Goodnick (Hrg.):
    "Book of Abstracts of the Workshop on High Performance TCAD";
    Institute for Microelectronics, TU Wien, Wien, 2019, 28 S.

  68. Autor/innen: Richard Zemann, E311-01-2; Alexander Grill, E360; Irene Hahn; Heinz Krebs, E163-03-2; Andrea Mayr; Peter Eder-Neuhauser, E389-01; Bianka Ullmann, E360

    R. Zemann, A. Grill, I. Hahn, H. Krebs, A. Mayr, P. Eder-Neuhauser, B. Ullmann (Hrg.):
    "Proceedings VSS 2015 - Vienna young Scientists Symposium";
    Book of Abstracts, Dipl.Ing. Heinz A. Krebs, 2352 Gumpoldskirchen, 2015, ISBN: 978-3-9504017-07; 182 S.


Zeitschriftenartikel


  1. Autor/innen: A. Abramo; L. Baudry; R. Brunetti; R. Castagne; M. Charef; F. Dessene; P. Dollfus; W.L. Engl; R. Fauquembergue; C. Fiegna; M.V. Fischetti; S. Galdin; N. Goldsman; Michael Hackel, E360; C. Hamaguchi; K. Hess; K. Hennacy; P. Hesto; J.M. Higman; T. Izuka; C. Jungemann; Y. Kamakura; Hans Kosina, E360; T. Kunikiyo; S.E. Laux; H. Lin; C. Maziar; H. Mizuno; H.J. Peifer; S. Ramaswamy; N. Sano; P.G. Scrobohaci; Siegfried Selberherr, E360; M. Takenaka; T.-W. Tang; K. Taniguchi; J.L. Thobel; R. Thoma; K. Tomizawa; M. Tomizawa; T. Vogelsang; S.-L. Wang; X. Wang; C.-S. Yao; P.D. Yoder; A. Yoshii

    A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii:
    "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon";
    IEEE Transactions on Electron Devices, 41 (1994), 9; S. 1646 - 1654.

    Zusätzliche Informationen

  2. Autor/innen: Luiz Felipe Aguinsky, E360; Francio Rodrigues, E360; Georg Wachter; Michael Trupke; Ulrich Schmid, E366-02; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    L.F. Aguinsky, F. Rodrigues, G. Wachter, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
    "Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon";
    Solid-State Electronics (eingeladen), 191 (2022), S. 108262-1 - 108262-8.

    Zusätzliche Informationen

  3. Autor/innen: Luiz Felipe Aguinsky, E360; Georg Wachter; Paul Manstetten, E360; Francio Rodrigues, E360; Michael Trupke; Ulrich Schmid, E366-02; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    L.F. Aguinsky, G. Wachter, P. Manstetten, F. Rodrigues, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
    "Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators";
    Journal of Micromechanics and Microengineering, 31 (2021), 12; S. 125003-1 - 125003-9.

    Zusätzliche Informationen

  4. Autor/innen: S. Ahmed; K. D. Holland; N. Paydavosi; C. Rogers; A Alam; Neophytos Neophytou, E360; D. Kienle; M. Vaidyanathan

    S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan:
    "Impact of Effective Mass on the Scaling Behavior of the fT and fmax of III-V High-Electron-Mobility Transistors";
    IEEE Transactions on Nanotechnology, 11 (2012), 6; S. 1160 - 1173.

  5. Autor/innen: T. Aichinger; M. Nelhiebel; S. Einspieler; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
    "In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip";
    IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; S. 3 - 8.

  6. Autor/innen: T. Aichinger; M. Nelhiebel; S. Einspieler; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
    "Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress";
    Journal of Applied Physics, 107 (2010), S. 024508-1 - 024508-8.

  7. Autor/innen: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI";
    IEEE Transactions on Electron Devices, 56 (2009), 12; S. 3018 - 3026.

  8. Autor/innen: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen";
    Applied Physics Letters, 96 (2010), S. 133511-1 - 133511-3.

  9. Autor/innen: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "On the Temperature Dependence of NBTI Recovery";
    Microelectronics Reliability, 48 (2008), S. 1178 - 1184.

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  10. Autor/innen: T. Aichinger; Michael Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures";
    Microelectronics Reliability, 53 (2013), 7; S. 937 - 946.

    Zusätzliche Informationen

  11. Autor/innen: S. M. Amoroso; L. Gerrer; Mihail Nedjalkov, E360; Razaidi Hussin; Craig Alexander; A Asenov

    S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov:
    "Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues";
    IEEE Transactions on Electron Devices, 61 (2014), 5; S. 1292 - 1298.

    Zusätzliche Informationen

  12. Autor/innen: Mohsen Asad; M. Fathipour; Mohammad Hossein Sheikhi; Mahdi Pourfath, E360

    M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath:
    "High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles";
    Sensors and Actuators A: Physical, 220 (2014), S. 213 - 220.

    Zusätzliche Informationen

  13. Autor/innen: Mohsen Asad; Sedigheh Salimian; Mohammad Hossein Sheikhi; Mahdi Pourfath, E360

    M. Asad, S. Salimian, M. Sheikhi, M. Pourfath:
    "Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS2 Nanoparticles";
    Sensors and Actuators A: Physical, 232 (2015), S. 285 - 291.

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  14. Autor/innen: Mohsen Asad; Mohammad Hossein Sheikhi; Mahdi Pourfath, E360; Mahmood Moradi

    M. Asad, M. Sheikhi, M. Pourfath, M. Moradi:
    "High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs";
    Sensors and Actuators B: Chemical, 210 (2015), S. 1 - 8.

    Zusätzliche Informationen

  15. Autor/innen: Winfried Auzinger, E101-02; Harald Hofstätter; Othmar Koch; Michael Quell, E360

    W. Auzinger, H. Hofstätter, O. Koch, M. Quell:
    "Adaptive Time Propagation for Time-Dependent Schrödinger Equations";
    International Journal of Applied and Computational Mathematics, 7 (2021), 1; S. 6-1 - 6-14.

    Zusätzliche Informationen

  16. Autor/innen: Alexander Axelevitch; Vassil Palankovski, E360; Siegfried Selberherr, E360; G. Golan

    A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
    "Investigation of Novel Silicon PV Cells of a Lateral Type";
    Silicon, 7 (2015), 3; S. 283 - 291.

    Zusätzliche Informationen

  17. Autor/innen: Tesfaye Ayalew, E360; Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
    "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
    Microelectronics Reliability, 44 (2004), 9-11; S. 1473 - 1478.

    Zusätzliche Informationen

  18. Autor/innen: Tesfaye Ayalew, E360; Andreas Gehring, E360; Jong Mun Park, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
    "Improving SiC Lateral DMOSFET Reliability under High Field Stress";
    Microelectronics Reliability, 43 (2003), 9-11; S. 1889 - 1894.

    Zusätzliche Informationen

  19. Autor/innen: Tesfaye Ayalew, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
    "Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
    Materials Science Forum, 483-485 (2005), S. 845 - 848.

    Zusätzliche Informationen

  20. Autor/innen: Tesfaye Ayalew, E360; Sang-Cheol Kim; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
    "Numerical Analysis of SiC Merged PiN Schottky Diodes";
    Materials Science Forum, 483-485 (2005), S. 949 - 952.

    Zusätzliche Informationen

  21. Autor/innen: Nima Sefidmooye Azar; Mahdi Pourfath, E360

    N.S. Azar, M. Pourfath:
    "Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents";
    The Journal of Physical Chemistry C, 120 (2016), 30; S. 16804 - 16814.

    Zusätzliche Informationen

  22. Autor/innen: Eberhard Baer; P. Evanschitzky; J. Lorenz; Frederic Roger; R. Minixhofer; Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
    "Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
    Microelectronic Engineering, 137 (2015), S. 141 - 145.

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  23. Autor/innen: Alireza R. Baghai-Wadji, E366-01; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain";
    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33 (1986), 3; S. 315 - 317.

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  24. Autor/innen: Mauro Ballicchia, E360; D.K. Ferry; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub:
    "Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution";
    Applied Sciences (eingeladen), 9 (2019), 7; S. 1344-1 - 1344-10.

    Zusätzliche Informationen

  25. Autor/innen: Mauro Ballicchia, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360

    M. Ballicchia, J. Weinbub, M. Nedjalkov:
    "Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects";
    Nanoscale, 10 (2018), 48; S. 23037 - 23049.

    Zusätzliche Informationen

  26. Autor/innen: A. G. Banshchikov; Yury Illarionov, E360; M. I. Vexler; Stefan Wachter, E387-01; N. S. Sokolov

    A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov:
    "Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer";
    Semiconductors (Physics of Semiconductor Devices), 53 (2019), 6; S. 833 - 837.

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  27. Autor/innen: Oskar Baumgartner, E360; Markus Karner, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
    Solid-State Electronics, 54 (2010), S. 143 - 148.

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  28. Autor/innen: Oskar Baumgartner, E360; Zlatan Stanojevic; Klaus Schnass; Markus Karner, E360; Hans Kosina, E360

    O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina:
    "VSP - A Quantum-Electronic Simulation Framework";
    Journal of Computational Electronics, 12 (2013), 4; S. 701 - 721.

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  29. Autor/innen: Oskar Baumgartner, E360; Viktor Sverdlov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
    IEEE Transactions on Nanotechnology, 10 (2011), 4; S. 737 - 743.

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  30. Autor/innen: Majid Benam, E360; Mauro Ballicchia, E360; Josef Weinbub, E360; Siegfried Selberherr, E360; Mihail Nedjalkov, E360

    M. Benam, M. Ballicchia, J. Weinbub, S. Selberherr, M. Nedjalkov:
    "A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling";
    Journal of Computational Electronics, 20 (2021), 2; S. 775 - 784.

    Zusätzliche Informationen

  31. Autor/innen: Mario Bendra, E360-01; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Interface Effects in Ultra-Scaled MRAM Cells";
    Solid-State Electronics, 194 (2022), S. 108373-1 - 108373-4.

    Zusätzliche Informationen

  32. Autor/innen: Judith Berens; Gregor Pobegen; Thomas Eichinger; Gerald Rescher; Tibor Grasser, E360

    J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
    "Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs";
    Materials Science Forum, 963 (2019), S. 175 - 179.

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  33. Autor/innen: Judith Berens; Gregor Pobegen; Tibor Grasser, E360

    J. Berens, G. Pobegen, T. Grasser:
    "Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs";
    Materials Science Forum, 1004 (2020), S. 652 - 658.

    Zusätzliche Informationen

  34. Autor/innen: Judith Berens; Gregor Pobegen; Gerald Rescher; T. Aichinger; Tibor Grasser, E360

    J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
    "NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
    IEEE Transactions on Electron Devices, 66 (2019), 11; S. 4692 - 4697.

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  35. Autor/innen: Ruch Bernhard; Gregor Pobegen; Maximilian Rösch; Rajeev Krishna Vytla; Tibor Grasser, E360

    R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
    "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
    IEEE Transactions on Device and Materials Reliability, 19 (2019), 1; S. 133 - 139.

    Zusätzliche Informationen

  36. Autor/innen: Markus Bina; S. E. Tyaginov, E360; J. Franco; Karl Rupp, E360; Yannick Wimmer, E360; Dimitry Osintsev, E360; Ben Kaczer; Tibor Grasser, E360

    M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
    "Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
    IEEE Transactions on Electron Devices, 61 (2014), 9; S. 3103 - 3110.

    Zusätzliche Informationen

  37. Autor/innen: Thomas Binder, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Binder, C. Heitzinger, S. Selberherr:
    "A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23 (2004), 6; S. 814 - 822.

    Zusätzliche Informationen

  38. Autor/innen: Thomas Binder, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    T. Binder, A. Hössinger, S. Selberherr:
    "Rigorous Integration of Semiconductor Process and Device Simulators";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 9; S. 1204 - 1214.

    Zusätzliche Informationen

  39. Autor/innen: Walter Bohmayr, E360; A. Burenkov; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
    "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; S. 1236 - 1243.

    Zusätzliche Informationen

  40. Autor/innen: Walter Bohmayr, E360; A. Burenkov; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
    "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation";
    IEEE Transactions on Semiconductor Manufacturing, 8 (1995), 4; S. 402 - 407.

    Zusätzliche Informationen

  41. Autor/innen: V. M. Borzdov; V. O. Galenchik; Hans Kosina, E360; F. F. Komarov; O. G. Zhevnyak

    V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
    "Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
    Physics of Low-dimensional Structures, 5-6 (2003), S. 99 - 108.

  42. Autor/innen: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)";
    IEICE Transactions on Electronics, E77-C (1994), 2; S. 179 - 186.

  43. Autor/innen: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor";
    IEEE Transactions on Electron Devices, 42 (1995), 12; S. 2137 - 2146.

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  44. Autor/innen: Helmut Brech; T. Grave; Siegfried Selberherr, E360

    H. Brech, T. Grave, S. Selberherr:
    "Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
    IEEE Transactions on Electron Devices, 47 (2000), 10; S. 1957 - 1964.

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  45. Autor/innen: Helmut Brech; T. Grave; Thomas Simlinger, E360; Siegfried Selberherr, E360

    H. Brech, T. Grave, T. Simlinger, S. Selberherr:
    "Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
    IEEE Transactions on Electron Devices, 44 (1997), 11; S. 1822 - 1828.

    Zusätzliche Informationen

  46. Autor/innen: Enrico Brinciotti; Giorgio Badino; Martin Knaipp, E360; G Gramse; Jürgen Smoliner, E362; Ferry Kienberger

    E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger:
    "Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy";
    IEEE Transactions on Nanotechnology, 16 (2017), 2; S. 245 - 252.

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  47. Autor/innen: Matthias Budil, E366; E. Guerrero; Thomas Brabec, E387-01; Siegfried Selberherr, E360; Hans Pötzl, E366

    M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl:
    "A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon";
    COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6 (1987), 1; S. 37 - 44.

    Zusätzliche Informationen

  48. Autor/innen: A. Burenkov; K. Tietzel; Andreas Hössinger, E360; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
    "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
    IEICE Transactions on Electronics, E83-C (2000), 8; S. 1259 - 1266.

  49. Autor/innen: V. V. A. Camargo; Ben Kaczer; Tibor Grasser, E360; G. Wirth

    V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
    "Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics";
    Microelectronics Reliability, 54 (2014), 11; S. 2364 - 2370.

  50. Autor/innen: V. V. A. Camargo; Ben Kaczer; G. Wirth; Tibor Grasser, E360; G. Groeseneken

    V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
    "Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
    IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP (2013), 99.

    Zusätzliche Informationen

  51. Autor/innen: Leonardo C. Castro; D.L. John; D.L. Pulfrey; Mahdi Pourfath, E360; Andreas Gehring, E360; Hans Kosina, E360

    L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina:
    "Method for Predicting fT for Carbon Nanotube FETs";
    IEEE Transactions on Nanotechnology, Vol. 4 (2005), 6; S. 699 - 704.

    Zusätzliche Informationen

  52. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
    IEEE Transactions on Device and Materials Reliability, 9 (2009), 1; S. 9 - 19.

    Zusätzliche Informationen

  53. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Interconnect Reliability Dependence on Fast Diffusivity Paths";
    Microelectronics Reliability (eingeladen), 52 (2012), 8; S. 1532 - 1538.

    Zusätzliche Informationen

  54. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Wolfhard Zisser, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
    "Microstructural Impact on Electromigration: A TCAD Study";
    Facta universitatis - series: Electronics and Energetics, 27 (2014), 1; S. 1 - 11.

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  55. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
    IEICE Transactions on Electronics (eingeladen), E86-C (2003), 3; S. 421 - 426.

  56. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration in Submicron Interconnect Features of Integrated Circuits";
    Materials Science and Engineering R-Reports, 71 (2011), 5-6; S. 53 - 86.

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  57. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
    Microelectronics Reliability, 42 (2002), 9-11; S. 1457 - 1460.

    Zusätzliche Informationen

  58. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360; Houman Zahedmanesh; Roberto Orio, E360; Kristof Croes

    H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
    "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects";
    ECS Journal of Solid State Science and Technology, 10 (2021), 3; S. 035003-1 - 035003-11.

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  59. Autor/innen: Hajdin Ceric, E360; Houman Zahedmanesh; Kristof Croes

    H. Ceric, H. Zahedmanesh, K. Croes:
    "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods";
    Microelectronics Reliability, 100-101 (2019), S. 113362.

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  60. Autor/innen: Johann Cervenka, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    J. Cervenka, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Sacrificial Etching";
    Proceedings of SPIE, 6589 (2007), S. 452 - 460.

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  61. Autor/innen: Johann Cervenka, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    J. Cervenka, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Sacrificial Etching";
    Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14 (2008), 4-5; S. 665 - 671.

    Zusätzliche Informationen

  62. Autor/innen: Johann Cervenka, E360; Robert Klima, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
    "Three-Dimensional Device Optimization by Green's Functions";
    European Physical Journal - Applied Physics, 21 (2003), S. 103 - 106.

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  63. Autor/innen: Johann Cervenka, E360; Robert Kosik, E360; Mihail Nedjalkov, E360

    J. Cervenka, R. Kosik, M. Nedjalkov:
    "A Deterministic Wigner Approach for Superposed States";
    Journal of Computational Electronics, 20 (2021), 6; S. 2104 - 2110.

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  64. Autor/innen: Johann Cervenka, E360; Hans Kosina, E360; Siegfried Selberherr, E360; J. Zhang; N. Hrauda; J Stangl; G. Bauer; G. Vastola; A. Marzegalli; Francesco Montalenti; L. Miglio

    J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio:
    "Strained MOSFETs on Ordered SiGe Dots";
    Solid-State Electronics, 65-66 (2011), S. 81 - 87.

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  65. Autor/innen: Johann Cervenka, E360; Wilfried Wessner, E360; Elaf Al-Ani, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
    "Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25 (2006), 10; S. 2118 - 2128.

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  66. Autor/innen: Z. Chaghazardi; S. B. Touski; Mahdi Pourfath, E360; R. Faez

    Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez:
    "Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness";
    Journal of Applied Physics, 120 (2016), 5; S. 053904-1 - 053904-5.

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  67. Autor/innen: Raffaele Alberto Coppeta, E360; David Holec, E308-01; Hajdin Ceric, E360; Tibor Grasser, E360

    R. Coppeta, D. Holec, H. Ceric, T. Grasser:
    "Evaluation of Dislocation Energy in Thin Films";
    Philosophical Magazine, 95 (2015), 2; S. 186 - 209.

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  68. Autor/innen: S. Das; Amritanand Sebastian; Eric Pop; Connor J. McClellan; Aaron D. Franklin; Tibor Grasser, E360; Theresia Knobloch, E360; Yury Illarionov, E360; Ashish V. Penumatcha; J Appenzeller; Zhihong Chen; Wenjuan Zhu; Lain-Jong Li; Uygar E. Avci; Navakanta Bhat; Thomas D. Anthopoulos; Rajendra Singh

    S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh:
    "Transistors Based on Two-Dimensional Materials for Future Integrated Circuits";
    Nature Electronics, 4 (2021), 11; S. 786 - 799.

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  69. Autor/innen: Antonina Dedyk; Yulia Pavlova; Sergey Karmanenko; Alexander Semenov; Dmitry Semikin; Oleg Pakhomov; Alexander Starkov; Ivan Starkov, E360

    A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov:
    "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics";
    Journal of Vacuum Science & Technology B, 29 (2011), S. 01A501-1 - 01A501-5.

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  70. Autor/innen: Johannes Demel; Siegfried Selberherr, E360

    J. Demel, S. Selberherr:
    "Application of the Complete Tableau Approach in JANAP";
    Electrosoft, 2 (1991), 6; S. 243 - 260.

  71. Autor/innen: Johannes Demel; Siegfried Selberherr, E360

    J. Demel, S. Selberherr:
    "VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran";
    Angewandte Informatik, 6 (1984), S. 244 - 247.

  72. Autor/innen: Denis Demidov; Karsten Ahnert; Karl Rupp, E360; P. Gottschling

    D. Demidov, K. Ahnert, K. Rupp, P. Gottschling:
    "Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries";
    SIAM Journal on Scientific Computing, 35 (2013), 5; S. 453 - 472.

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  73. Autor/innen: Siddhartha Dhar, E360; Hans Kosina, E360; Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
    "High-Field Electron Mobility Model for Strained-Silicon Devices";
    IEEE Transactions on Electron Devices, 53 (2006), 12; S. 3054 - 3062.

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  74. Autor/innen: Siddhartha Dhar, E360; Hans Kosina, E360; Vassil Palankovski, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
    "Electron Mobility Model for Strained-Si Devices";
    IEEE Transactions on Electron Devices, 52 (2005), 4; S. 527 - 533.

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  75. Autor/innen: Siddhartha Dhar, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
    "Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
    IEEE Transactions on Nanotechnology, 6 (2007), 1; S. 97 - 100.

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  76. Autor/innen: Georgios Diamantopoulos, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
    "A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing";
    Advances in Computational Mathematics, 45 (2019), 4; S. 2029 - 2045.

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  77. Autor/in: Peter Dickinger, E360

    P. Dickinger:
    "New Models of High Voltage DMOS Devices for Circuit Simulation";
    Electrosoft, 1 (1990), 4; S. 298 - 308.

  78. Autor/innen: Ivan Dimov; Mihail Nedjalkov, E360; J. M. Sellier; Siegfried Selberherr, E360

    I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
    "Boundary Conditions and the Wigner Equation Solution";
    Journal of Computational Electronics, 14 (2015), 4; S. 859 - 863.

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  79. Autor/innen: Nima Djavid; Kaveh Khaliji; Seyed Mohammad Tabatabaei; Mahdi Pourfath, E360

    N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath:
    "A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons";
    IEEE Transactions on Electron Devices, 61 (2014), 1; S. 23 - 29.

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  80. Autor/innen: Klaus Dragosits, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    K. Dragosits, M. Knaipp, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Memory Cells";
    Journal of the Korean Physical Society, 35 (1999), 92; S. 104 - 106.

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  81. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Simulation of Ferroelectric Thin Films";
    Radiation Effects and Defects in Solids, 156 (2001), 1-4; S. 157 - 161.

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  82. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Memory Cells";
    IEEE Transactions on Electron Devices, 48 (2001), 2; S. 316 - 322.

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  83. Autor/innen: Fabian Ducry, ETH Zurich; Dominic Waldhör, E360; Theresia Knobloch, E360; Miklos Csontos, ETH Zürich; Jimenez Nadia Olalla, ETH Zürich; Juergen Leuthold, ETH Zürich; Tibor Grasser, E360; Mathieu Luisier

    F. Ducry, D. Waldhör, T. Knobloch, M. Csontos, J. Olalla, J. Leuthold, T. Grasser, M. Luisier:
    "An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride";
    npj 2D Materials and Applications, 6 (2022), 58.

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  84. Autor/innen: A.-M. El-Sayed; Matthew B. Watkins; Tibor Grasser, E360; V. V. Afanas´Ev; A. L. Shluger

    A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
    "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide";
    Microelectronic Engineering, 147 (2015), S. 141 - 144.

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  85. Autor/innen: A.-M. El-Sayed; Matthew B. Watkins; Tibor Grasser, E360; V. V. Afanas´Ev; A. L. Shluger

    A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
    "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
    Physical Review Letters, 114 (2015), 11; S. 115503-1 - 115503-5.

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  86. Autor/innen: A.-M. El-Sayed; Yannick Wimmer, E360; Wolfgang Gös, E360; Tibor Grasser, E360; V. V. Afanas´Ev; A. L. Shluger

    A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
    "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
    Physical Review B, 92 (2015), 1; S. 014107-1 - 014107-11.

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  87. Autor/innen: Al-Moatasem El-Sayed, E360; Matthew B. Watkins; Tibor Grasser, E360; A. L. Shluger

    A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger:
    "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO";
    Physical Review B, 98 (2018), 6; S. 064102.

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  88. Autor/innen: Mohammad Elahi; Kaveh Khaliji; Seyed Mohammad Tabatabaei; Mahdi Pourfath, E360; Reza Asgari

    M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari:
    "Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain";
    Physical Review B, 91 (2015), 11; S. 1154121 - 1154128.

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  89. Autor/innen: Paul Ellinghaus, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics";
    Physica Status Solidi - Rapid Research Letters, 11 (2017), 7; S. 1700102-1 - 1700102-5.

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  90. Autor/innen: Paul Ellinghaus, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition";
    Journal of Computational Electronics, 14 (2015), 1; S. 151 - 162.

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  91. Autor/innen: Johannes Ender, E360; Simone Fiorentini, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
    "Emerging CMOS Compatible Magnetic Memories and Logic";
    IEEE Journal of the Electron Devices Society (eingeladen), 9 (2021), S. 456 - 463.

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  92. Autor/innen: Johannes Ender, E360; Simone Fiorentini, E360; Roberto Orio, E360; Tomás Hadámek, E360; Mario Bendra, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
    "Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
    Proceedings of SPIE (eingeladen), 12157 (2022), S. 1215708-1 - 1215708-14.

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  93. Autor/innen: Johannes Ender, E360; Roberto Lacerda de Orio; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement learning to reduce failures in SOT-MRAM switching";
    Microelectronics Reliability (eingeladen), 135 (2022), 114570; S. 1 - 5.

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  94. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
    Microelectronics Reliability, 126 (2021), S. 114231-1 - 114231-5.

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  95. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
    Proceedings of SPIE (eingeladen), 11805 (2021), S. 1180519-1 - 1180519-8.

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  96. Autor/innen: Robert Entner, E360; Tibor Grasser, E360; Oliver Triebl, E360; H. Enichlmair; R. Minixhofer

    R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
    "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
    Microelectronics Reliability, 47 (2007), 4-5; S. 697 - 699.

  97. Autor/innen: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "A Fast Level Set Framework for Large Three-Dimensional Topography Simulations";
    Computer Physics Communications, 180 (2009), 8; S. 1242 - 1250.

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  98. Autor/innen: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation";
    Microelectronic Engineering, 87 (2010), 1; S. 20 - 29.

    Zusätzliche Informationen

  99. Autor/innen: T Fahringer; Peter Blaha; Andreas Hössinger, E360; Joachim Luitz; Eduard Mehofer; Hans Moritsch; B. Scholz

    T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz:
    "Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures ";
    Concurrency and Computation: Practice and Experience, 13 (2001), 10; S. 1 - 17.

  100. Autor/innen: Franz Fasching, E360; Walter Tuppa, E360; Siegfried Selberherr, E360

    F. Fasching, W. Tuppa, S. Selberherr:
    "VISTA - The Data Level";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13 (1994), 1; S. 72 - 81.

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  101. Autor/innen: Safari Fatemeh; Mahdi Moradinasab; Udo Schwalke; Lado Filipovic, E360

    S. Fatemeh, M. Moradinasab, U. Schwalke, L. Filipovic:
    "Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications";
    ACS Omega, 6 (2021), 29; S. 18770 - 18781.

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  102. Autor/innen: Maximilian Feil; Andreas Huerner; Katja Puschkarsky; Christian Schleich, E360; Thomas Eichinger; W. Gustin; H. Reisinger; Tibor Grasser, E360

    M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
    "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
    Crystals (eingeladen), 10 (2020), 12; S. 1143-1 - 1143-14.

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  103. Autor/innen: Maximilian Feil; Katja Puschkarsky; W. Gustin; H. Reisinger; Tibor Grasser, E360

    M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser:
    "On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices";
    IEEE Transactions on Electron Devices, 68 (2021), 1; S. 236 - 243.

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  104. Autor/innen: D.K. Ferry; Mihail Nedjalkov, E360; Josef Weinbub, E360; Mauro Ballicchia, E360; Ian Welland; Siegfried Selberherr, E360

    D.K. Ferry, M. Nedjalkov, J. Weinbub, M. Ballicchia, I. Welland, S. Selberherr:
    "Complex Systems in Phase Space";
    Entropy (eingeladen), 22 (2020), 10; S. 1103-1 - 1103-19.

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  105. Autor/innen: D.K. Ferry; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    D.K. Ferry, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "A Review of Quantum Transport in Field-Effect Transistors";
    Semiconductor Science and Technology (eingeladen), 37 (2022), 4; S. 043001-1 - 043001-32.

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  106. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration";
    Microelectronics Reliability, 97 (2019), S. 38 - 52.

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  107. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters";
    Microelectronics Reliability, 123 (2021), S. 114219-1 - 114219-14.

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  108. Autor/innen: Lado Filipovic, E360; Ayoub Lahlalia, E360

    L. Filipovic, A. Lahlalia:
    "Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology";
    Journal of the Electrochemical Society, 165 (2018), 16; S. 862 - 879.

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  109. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework";
    Microelectronic Engineering, 107 (2013), S. 23 - 32.

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  110. Autor/innen: Lidija Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors";
    Nanomaterials (eingeladen), 12 (2022), 1651.

    Zusätzliche Informationen

  111. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Microstructure and Granularity Effects in Electromigration";
    IEEE Journal of the Electron Devices Society (eingeladen), 9 (2021), S. 476 - 483.

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  112. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors";
    Sensors, 15 (2015), 4; S. 7206 - 7227.

    Zusätzliche Informationen

  113. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
    IEEE Transactions on Device and Materials Reliability, 16 (2016), 4; S. 483 - 495.

    Zusätzliche Informationen

  114. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress in Three-Dimensionally Integrated Sensor Systems";
    Microelectronics Reliability, 61 (2016), S. 3 - 10.

    Zusätzliche Informationen

  115. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
    Microelectronics Reliability, 54 (2014), 9-10; S. 1953 - 1958.

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  116. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors";
    Materials (eingeladen), 12 (2019), 15; S. 2410-1 - 2410-37.

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  117. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; Elise Brunet, E165-01; Stephan Seinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
    "Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques";
    Microelectronic Engineering, 117 (2014), S. 57 - 66.

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  118. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; Elise Brunet; Stephan Seinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank; Christian Gspan; Werner Grogger

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
    "A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework";
    Engineering Letters (eingeladen), 21 (2013), 4; S. 224 - 240.

  119. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; E. Brunet; S. Steinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank; Christian Gspan; Werner Grogger

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
    "Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications";
    IEEE Transactions on Semiconductor Manufacturing, 27 (2014), 2; S. 269 - 277.

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  120. Autor/innen: Lado Filipovic, E360; Anderson P. Singulani, E360; Frederic Roger; Sara Carniello; Siegfried Selberherr, E360

    L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
    "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
    Microelectronics Reliability, 55 (2015), 9-10; S. 1843 - 1848.

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  121. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Mohamed Mohamedou, E360-01; Siegfried Selberherr, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
    Proceedings of SPIE (eingeladen), 11470 (2020), S. 50 - 56.

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  122. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Siegfried Selberherr, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
    Solid-State Electronics (eingeladen), 186 (2021), S. 108103.

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  123. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
    IEEE Journal of the Electron Devices Society (eingeladen), 8 (2020), S. 1249 - 1256.

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  124. Autor/innen: Claus Fischer, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    C. Fischer, G. Nanz, S. Selberherr:
    "Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas";
    Computer Methods in Applied Mechanics and Engineering, 110 (1993), 1-2; S. 17 - 24.

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  125. Autor/innen: Peter Fleischmann, E360; Wolfgang Pyka, E360; Siegfried Selberherr, E360

    P. Fleischmann, W. Pyka, S. Selberherr:
    "Mesh Generation for Application in Technology CAD";
    IEICE Transactions on Electronics (eingeladen), E82-C (1999), 6; S. 937 - 947.

  126. Autor/innen: Peter Fleischmann, E360; Siegfried Selberherr, E360

    P. Fleischmann, S. Selberherr:
    "Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 8; S. 1 - 38.

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  127. Autor/innen: Samuel Foster; Michael Thesberg, E360; Neophytos Neophytou

    S. Foster, M. Thesberg, N. Neophytou:
    "Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites";
    Materials Today: Proceedings, 8 (2019), S. 690 - 695.

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  128. Autor/innen: Samuel Foster; Michael Thesberg, E360; Neophytos Neophytou

    S. Foster, M. Thesberg, N. Neophytou:
    "Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations";
    Physical Review B, 96 (2017), 19; S. 195425-1 - 195425-12.

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  129. Autor/innen: J. Franco; S. Graziano; Ben Kaczer; F. Crupi; L. A. Ragnarsson; Tibor Grasser, E360; G. Groeseneken

    J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken:
    "BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic";
    Microelectronics Reliability, 52 (2012), S. 1932 - 1935.

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  130. Autor/innen: J. Franco; Ben Kaczer; J. Mitard; M. Toledano-Luque; Ph. J. Roussel; L. Witters; Tibor Grasser, E360; Guido Groeseneken

    J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
    "NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
    IEEE Transactions on Device and Materials Reliability (eingeladen), 13 (2013), 4; S. 497 - 506.

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  131. Autor/innen: J. Franco; Ben Kaczer; Ph. J. Roussel; J. Mitard; M. Cho; L. Witters; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken:
    "SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI";
    IEEE Transactions on Electron Devices, 60 (2013), 1; S. 396 - 404.

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  132. Autor/innen: J. Franco; Ben Kaczer; M. Toledano-Luque; Muhammad Faiz Bukhori; Ph. J. Roussel; Tibor Grasser, E360; A Asenov; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken:
    "Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs";
    IEEE Electron Device Letters, 33 (2012), 6; S. 779 - 781.

  133. Autor/innen: J. Franco; Ben Kaczer; M Toledano-Luque; Ph. J. Roussel; M Choa; T. Kauerauf; J. Mitard; G. Eneman; L. Witters; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken:
    "Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs";
    Microelectronic Engineering, 109 (2013), S. 250 - 256.

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  134. Autor/innen: J. Franco; Ben Kaczer; M. Toledano-Luque; Ph. J. Roussel; Philipp Paul Hehenberger, E360; Tibor Grasser, E360; J. Mitard; G. Eneman; T.Y. Hoffmann; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
    "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
    Microelectronic Engineering, 88 (2011), 7; S. 1388 - 1391.

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  135. Autor/innen: J. Franco; Ben Kaczer; M. Toledano-Luque; Ph. J. Roussel; T. Kauerauf; J. Mitard; L. Witters; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken:
    "SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues";
    IEEE Transactions on Electron Devices, 60 (2013), 1; S. 405 - 412.

  136. Autor/innen: J. Franco; Zhicheng Wu; Gerhard Rzepa, E360; L. A. Ragnarsson; Harold Dekkers; Anne Vandooren; Guido Groeseneken; N. Horiguchi; N. Collaert; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
    "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI";
    IEEE Transactions on Device and Materials Reliability, 19 (2019), 2; S. 268 - 274.

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  137. Autor/innen: Andrea F. Franz; Gerhard Franz, E366; Siegfried Selberherr, E360; Ch. Ringhofer; Peter A. Markowich

    A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich:
    "Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation";
    IEEE Transactions on Electron Devices, 30 (1983), 9; S. 1070 - 1082.

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  138. Autor/innen: Francisco Gamiz; Juan B. Roldan; Hans Kosina, E360; Tibor Grasser, E360

    F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
    "Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
    IEEE Transactions on Electron Devices, 48 (2001), 9; S. 1878 - 1884.

  139. Autor/innen: Abel Garcia-Barrientos; V. Grimalsky; E. A. Gutierrez-Dominguez; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski:
    "Nonstationary Effects of the Space Charge in Semiconductor Structures";
    Journal of Applied Physics, 105 (2009), S. 074501-1 - 074501-6.

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  140. Autor/innen: Abel Garcia-Barrientos; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Palankovski:
    "Numerical Simulations of Amplification of Space Charge Waves in n-InP Films";
    Materials Science and Engineering B, 176 (2011), 17; S. 1368 - 1372.

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  141. Autor/innen: Abel Garcia-Barrientos; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Palankovski:
    "Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity";
    Applied Physics Letters, 98 (2011), S. 072110-1 - 072110-3.

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  142. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Byoung-Ho Cheong; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
    "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
    Solid-State Electronics, 46 (2002), 10; S. 1545 - 1551.

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  143. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
    "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
    Electronics Letters, 39 (2003), 8; S. 691 - 692.

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  144. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
    "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
    Journal of Applied Physics, 92 (2002), 10; S. 6019 - 6027.

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  145. Autor/innen: Andreas Gehring, E360; F. Jimenez-Molinos; Hans Kosina, E360; A. Palma; Francisco Gamiz; Siegfried Selberherr, E360

    A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
    "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
    Microelectronics Reliability, 43 (2003), 9-11; S. 1495 - 1500.

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  146. Autor/innen: Andreas Gehring, E360; Hans Kosina, E360

    A. Gehring, H. Kosina:
    "Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method";
    Journal of Computational Electronics, 4 (2005), 1-2; S. 67 - 70.

  147. Autor/innen: Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, H. Kosina, S. Selberherr:
    "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
    Journal of Computational Electronics, 2 (2003), 2-4; S. 219 - 223.

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  148. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Evolution of Current Transport Models for Engineering Applications";
    Journal of Computational Electronics, 3 (2004), 3-4; S. 149 - 155.

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  149. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Gate Current Modeling for MOSFETs";
    Journal of Computational and Theoretical Nanoscience (eingeladen), 2 (2005), 1; S. 26 - 44.

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  150. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
    IEEE Transactions on Device and Materials Reliability, 4 (2004), 3; S. 306 - 319.

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  151. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
    Microelectronics Reliability, 44 (2004), 9-11; S. 1879 - 1884.

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  152. Autor/innen: N Ghobadi; Mahdi Pourfath, E360

    N. Ghobadi, M. Pourfath:
    "A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures";
    IEEE Transactions on Electron Devices, 61 (2014), 1; S. 186 - 192.

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  153. Autor/innen: N Ghobadi; Mahdi Pourfath, E360

    N. Ghobadi, M. Pourfath:
    "On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors";
    Journal of Applied Physics, 116 (2014), 18; S. 1845061 - 1845067.

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  154. Autor/innen: N Ghobadi; Mahdi Pourfath, E360

    N. Ghobadi, M. Pourfath:
    "Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing";
    IEEE Electron Device Letters, 36 (2015), 3; S. 280 - 282.

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  155. Autor/innen: M. Gholipour; N. Masoumi; Y. C. Chen; D. Chen; Mahdi Pourfath, E360

    M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath:
    "Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design";
    IEEE Transactions on Electron Devices, 61 (2014), 12; S. 4000 - 4006.

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  156. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360

    J. Ghosh, D. Osintsev, V. Sverdlov:
    "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
    Journal of Computational Electronics, 18 (2019), 1; S. 28 - 36.

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  157. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
    Journal of Nano Research, 39 (2016), S. 34 - 42.

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  158. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
    Microelectronic Engineering, 147 (2015), S. 89 - 91.

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  159. Autor/innen: Joydeep Ghosh, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
    Journal of Applied Physics, 115 (2014), 17; S. 17C503-1 - 17C503-3.

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  160. Autor/innen: Joydeep Ghosh, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection in a Semiconductor Through a Space-Charge Layer";
    Solid-State Electronics, 101 (2014), S. 116 - 121.

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  161. Autor/innen: Kay-Uwe Giering; Katja Puschkarsky; H. Reisinger; Gerhard Rzepa, E360; Gunnar Andreas Rott; R. P. Vollertsen; Tibor Grasser, E360; Roland Jancke

    K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke:
    "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling";
    IEEE Transactions on Electron Devices, 66 (2019), 4; S. 1662 - 1668.

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  162. Autor/innen: Markus Glaser; Andreas Kitzler; A Johannes; Slawomir Pruncal; Heidi Potts; Sonia Conesa-Boj; Lidija Filipovic, E360; Hans Kosina, E360; Wolfgang Skorupa; Emmerich Bertagnolli, E362; C Ronning; Anna Fontcuberta i Morral; Alois Lugstein, E362

    M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein:
    "Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures";
    Nano Letters, 16 (2016), 6; S. 3507 - 3518.

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  163. Autor/innen: Lukas Gnam, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "Accelerating Flux Calculations Using Sparse Sampling";
    Micromachines (eingeladen), 9 (2018), 11; S. 1 - 17.

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  164. Autor/innen: Hans Goebl; Siegfried Selberherr, E360; W.-D Rase; H. Pudlatz

    H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz:
    "Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique";
    Computers and the Humanities, 16 (1982), S. 69 - 84.

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  165. Autor/innen: Wolfgang Gös, E360; Markus Karner, E360; Viktor Sverdlov, E360; Tibor Grasser, E360

    W. Gös, M. Karner, V. Sverdlov, T. Grasser:
    "Charging and Discharging of Oxide Defects in Reliability Issues";
    IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; S. 491 - 500.

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  166. Autor/innen: Wolfgang Gös, E360; Franz Schanovsky, E360; H. Reisinger; Ben Kaczer; Tibor Grasser, E360

    W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
    "Bistable Defects as the Cause for NBTI and RTN";
    Solid State Phenomena (eingeladen), 178-179 (2011), S. 473 - 482.

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  167. Autor/innen: Wolfgang Gös, E360; Yannick Wimmer, E360; Al-Moatasem El-Sayed, E360; Gerhard Rzepa, E360; Markus Jech, E360; A. L. Shluger; Tibor Grasser, E360

    W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser:
    "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence";
    Microelectronics Reliability, 87 (2018), S. 286 - 320.

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  168. Autor/innen: Benito Gonzalez; Vassil Palankovski, E360; Hans Kosina, E360; A. Hernandez; Siegfried Selberherr, E360

    B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
    "An Energy Relaxation Time Model for Device Simulation";
    Solid-State Electronics, 43 (1999), 9; S. 1791 - 1795.

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  169. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation";
    Physica A: Statistical Mechanics and its Applications, 349 (2005), S. 221 - 258.

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  170. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities";
    Microelectronics Reliability (eingeladen), 52 (2012), 1; S. 39 - 70.

    Zusätzliche Informationen

  171. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, W. Gös, B. Kaczer:
    "Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models";
    IEEE Transactions on Device and Materials Reliability (eingeladen), 8 (2008), 1; S. 79 - 97.

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  172. Autor/innen: Tibor Grasser, E360; Ben Kaczer

    T. Grasser, B. Kaczer:
    "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs";
    IEEE Transactions on Electron Devices, 56 (2009), 5; S. 1056 - 1062.

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  173. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360; T. Aichinger; Philipp Paul Hehenberger, E360; M. Nelhiebel

    T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
    "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
    Microelectronic Engineering (eingeladen), 86 (2009), 7-9; S. 1876 - 1882.

  174. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360; H. Reisinger; T. Aichinger; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; Franz Schanovsky, E360; J. Franco; M. Toledano-Luque; M. Nelhiebel

    T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel:
    "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps";
    IEEE Transactions on Electron Devices (eingeladen), 58 (2011), 11; S. 3652 - 3666.

  175. Autor/innen: Tibor Grasser, E360; Robert Kosik, E360; C. Jungemann; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
    "Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
    Journal of Applied Physics, 97 (2005), 9; S. 093710-1 - 093710-12.

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  176. Autor/innen: Tibor Grasser, E360; Robert Kosik, E360; C. Jungemann; Bernd Meinerzhagen; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
    "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
    Journal of Computational Electronics, 3 (2004), 3-4; S. 183 - 187.

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  177. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Markus Gritsch, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
    "Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
    Journal of Applied Physics, 90 (2001), 5; S. 2389 - 2396.

    Zusätzliche Informationen

  178. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
    "Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
    Applied Physics Letters, 80 (2002), 4; S. 613 - 615.

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  179. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
    "Characterization of the Hot Electron Distribution Function Using Six Moments";
    Journal of Applied Physics, 91 (2002), 6; S. 3869 - 3879.

    Zusätzliche Informationen

  180. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hot Carrier Effects within Macroscopic Transport Models";
    International Journal of High Speed Electronics and Systems, 13 (2003), 3; S. 873 - 901.

    Zusätzliche Informationen

  181. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
    Wisnik (eingeladen), 444 (2002), S. 28 - 41.

  182. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
    Wisnik (eingeladen), 444 (2002), S. 18 - 27.

  183. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
    Journal of Applied Physics, 90 (2001), 12; S. 6165 - 6171.

    Zusätzliche Informationen

  184. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
    Applied Physics Letters, 79 (2001), 12; S. 1900 - 1902.

    Zusätzliche Informationen

  185. Autor/innen: Tibor Grasser, E360; H. Reisinger; Paul-Jürgen Wagner, E360; Ben Kaczer

    T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer:
    "Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors";
    Physical Review B, 82 (2010), S. 245318-1 - 245318-10.

    Zusätzliche Informationen

  186. Autor/innen: Tibor Grasser, E360; K. Rott; H. Reisinger; Michael Waltl, E360; Franz Schanovsky, E360; Ben Kaczer

    T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
    "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
    IEEE Transactions on Electron Devices, 61 (2014), 11; S. 3586 - 3593.

    Zusätzliche Informationen

  187. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Electro-Thermal Effects in Mixed-Mode Device Simulation";
    Romanian Journal of Information Science and Technology, 5 (2002), 4; S. 339 - 354.

  188. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
    IEEE Transactions on Electron Devices, 48 (2001), 7; S. 1421 - 1427.

    Zusätzliche Informationen

  189. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Mixed-Mode Device Simulation";
    Microelectronics Journal, 31 (2000), 11-12; S. 873 - 881.

    Zusätzliche Informationen

  190. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Modeling of Negative Bias Temperature Instability";
    Journal of Telecommunications and Information Technology (eingeladen), 7 (2007), 2; S. 92 - 102.

  191. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Technology CAD: Device Simulation and Characterization";
    Journal of Vacuum Science & Technology B, 20 (2002), 1; S. 407 - 413.

    Zusätzliche Informationen

  192. Autor/innen: Tibor Grasser, E360; T.-W. Tang; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
    "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
    Proceedings of the IEEE, 91 (2003), 2; S. 251 - 274.

    Zusätzliche Informationen

  193. Autor/innen: Tibor Grasser, E360; Paul-Jürgen Wagner, E360; Philipp Paul Hehenberger, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
    "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
    IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; S. 526 - 535.

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  194. Autor/innen: Alexander Grill, E360; Bernhard Stampfer, E360; Ki-Sik Im; J.-H. Lee; C Ostermaier; Hajdin Ceric, E360; Michael Waltl, E360; Tibor Grasser, E360

    A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser:
    "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs";
    Solid-State Electronics, 19 (2019), 156; S. 41 - 47.

    Zusätzliche Informationen

  195. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
    Solid-State Electronics, 45 (2001), 5; S. 621 - 627.

    Zusätzliche Informationen

  196. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
    IEEE Transactions on Electron Devices, 49 (2002), 10; S. 1814 - 1820.

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  197. Autor/innen: Neha Gupta; Ambika Shah; Sajid Khan; Santosh Kumar Vishvakarma; Michael Waltl, E360; Patrick Girard

    N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard:
    "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications";
    Electronics, 10 (2021), 14; S. 1718-1 - 1718-16.

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  198. Autor/innen: T.V. Gurov; Mihail Nedjalkov, E360; P.A. Whitlock; Hans Kosina, E360; Siegfried Selberherr, E360

    T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
    "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
    Physica B: Condensed Matter, 314 (2002), 1-4; S. 301 - 304.

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  199. Autor/in: Predrag Habas, E360

    P. Habas:
    "A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility";
    Solid-State Electronics, 33 (1990), 7; S. 923 - 933.

    Zusätzliche Informationen

  200. Autor/in: Predrag Habas, E360

    P. Habas:
    "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs";
    Microelectronic Engineering, 28 (1995), 1-4; S. 171 - 174.

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  201. Autor/innen: Predrag Habas, E360; John Faricelli

    P. Habas, J. Faricelli:
    "Investigation of the Physical Modeling of the Gate-Depletion Effect";
    IEEE Transactions on Electron Devices, 39 (1992), 6; S. 1496 - 1500.

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  202. Autor/innen: Predrag Habas, E360; Siegfried Selberherr, E360

    P. Habas, S. Selberherr:
    "Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices";
    Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20 (1990), 4; S. 185 - 188.

  203. Autor/innen: Predrag Habas, E360; Siegfried Selberherr, E360

    P. Habas, S. Selberherr:
    "On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling";
    Solid-State Electronics, 33 (1990), 12; S. 1539 - 1544.

    Zusätzliche Informationen

  204. Autor/innen: Michael Hackel, E360; M. Faber; H. Markum

    M. Hackel, M. Faber, H. Markum:
    "Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks";
    Physical Review D, 46 (1992), 12; S. 5648 - 5654.

  205. Autor/innen: Michael Hackel, E360; M. Faber; H. Markum; M. Müller

    M. Hackel, M. Faber, H. Markum, M. Müller:
    "Chiral Interface for QCD with Dynamical Quarks";
    International Journal of Modern Physics C, 3 (1992), 5; S. 961 - 970.

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  206. Autor/innen: Tomás Hadámek, E360; Simone Fiorentini, E360; Mario Bendra, E360-01; Johannes Ender, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach";
    Solid-State Electronics (eingeladen), 193 (2022), S. 108269-1 - 108269-7.

    Zusätzliche Informationen

  207. Autor/innen: W. Hänsch; Siegfried Selberherr, E360

    W. Hänsch, S. Selberherr:
    "MINIMOS 3: A MOSFET Simulator that Includes Energy Balance";
    IEEE Transactions on Electron Devices, 34 (1987), 5; S. 1074 - 1078.

    Zusätzliche Informationen

  208. Autor/innen: Stefan Halama, E360; Franz Fasching, E360; Claus Fischer, E360; Hans Kosina, E360; Ernst Leitner, E360; Philipp Lindorfer, E360; Christoph Pichler, E360; Hubert Pimingstorfer; Helmut Puchner, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360; Martin Stiftinger, E360; Hannes Stippel, E360; Ernst Strasser, E360; Walter Tuppa, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
    "The Viennese Integrated System for Technology CAD Applications";
    Microelectronics Journal, 26 (1995), S. 137 - 158.

    Zusätzliche Informationen

  209. Autor/innen: Stefan Halama, E360; Christoph Pichler, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr:
    "VISTA - User Interface, Task Level, and Tool Integration";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14 (1995), 10; S. 1208 - 1222.

    Zusätzliche Informationen

  210. Autor/innen: Stefan Halama, E360; Siegfried Selberherr, E360

    S. Halama, S. Selberherr:
    "Future Aspects of Process and Device Simulation";
    Electron Technology (eingeladen), 26 (1993), S. 49 - 57.

  211. Autor/innen: Christian Harlander, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    C. Harlander, R. Sabelka, S. Selberherr:
    "Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method";
    Microelectronics Journal, 34 (2003), 9; S. 815 - 821.

    Zusätzliche Informationen

  212. Autor/innen: Anzt Hartwig; Erik Boman; Rob Falgout; Pieter Ghysels; Michael Heroux; Xiaoye Li; Lois Curfman McInnes; Richard T. Mills; Sivasankaran Rajamanickam; Karl Rupp, E360; Barry Smith; Ichitaro Yamazaki; Ulrike Meier Yang

    A. Hartwig, E. Boman, R. Falgout, P. Ghysels, M. Heroux, X. Li, L. McInnes, R. Mills, S. Rajamanickam, K. Rupp, B. Smith, I. Yamazaki, U. Meier Yang:
    "Preparing Sparse Solvers for Exascale Computing";
    Philosophical Transactions of The Royal Society A (eingeladen), 378 (2020), S. 20190053-1 - 20190053-14.

    Zusätzliche Informationen

  213. Autor/innen: Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; H. Reisinger; Tibor Grasser, E360

    Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
    "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
    Microelectronics Reliability, 49 (2009), S. 1013 - 1017.

    Zusätzliche Informationen

  214. Autor/innen: Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360; K. Traar

    O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar:
    "Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation";
    SIAM Journal of Scientific and Statistical Computing, 13 (1992), 1; S. 289 - 306.

    Zusätzliche Informationen

  215. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360

    R. Heinzl, P. Schwaha:
    "A Generic Topology Library";
    Science of Computer Programming, 76 (2011), 4; S. 324 - 346.

    Zusätzliche Informationen

  216. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
    "GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
    International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; S. 505 - 520.

    Zusätzliche Informationen

  217. Autor/innen: Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Hössinger, S. Selberherr:
    "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
    Mathematics and Computers in Simulation, 66 (2004), 2-3; S. 219 - 230.

    Zusätzliche Informationen

  218. Autor/innen: Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Hössinger, S. Selberherr:
    "On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 7; S. 879 - 883.

    Zusätzliche Informationen

  219. Autor/innen: Clemens Heitzinger, E360; Wolfgang Pyka, E360; N. Tamaoki; T. Takase; T. Ohmine; Siegfried Selberherr, E360

    C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
    "Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 3; S. 285 - 292.

    Zusätzliche Informationen

  220. Autor/innen: Clemens Heitzinger, E360; Ch. Ringhofer

    C. Heitzinger, Ch. Ringhofer:
    "A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation";
    Journal of Computational Electronics, 3 (2004), 1; S. 33 - 44.

    Zusätzliche Informationen

  221. Autor/innen: Clemens Heitzinger, E360; Ch. Ringhofer; Siegfried Selberherr, E360

    C. Heitzinger, Ch. Ringhofer, S. Selberherr:
    "Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities";
    Communications in Mathematical Sciences, 5 (2007), 4; S. 779 - 788.

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  222. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
    Proceedings of SPIE, 4228 (2000), S. 279 - 289.

    Zusätzliche Informationen

  223. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
    Microelectronics Journal, 33 (2002), 1-2; S. 61 - 68.

    Zusätzliche Informationen

  224. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
    Microelectronics Journal, 35 (2004), 2; S. 167 - 171.

    Zusätzliche Informationen

  225. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Fuad Badrieh; Helmut Puchner, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
    "Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process";
    IEEE Transactions on Electron Devices, 51 (2004), 7; S. 1129 - 1134.

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  226. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Jong Mun Park, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
    "A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24 (2005), 10; S. 1485 - 1491.

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  227. Autor/innen: Yoanlys Hernandez, E360; Bernhard Stampfer, E360; Tibor Grasser, E360; Michael Waltl, E360

    Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl:
    "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies";
    Crystals, 11 (2021), 9; S. 1150-1 - 1150-9.

    Zusätzliche Informationen

  228. Autor/innen: Gerhard Hobler, E362; Erasmus Langer, E360; Siegfried Selberherr, E360

    G. Hobler, E. Langer, S. Selberherr:
    "Two-Dimensional Modeling of Ion Implantation with Spatial Moments";
    Solid-State Electronics, 30 (1987), 4; S. 445 - 455.

    Zusätzliche Informationen

  229. Autor/innen: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8 (1989), 5; S. 450 - 459.

    Zusätzliche Informationen

  230. Autor/innen: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Two-Dimensional Modeling of Ion Implantation Induced Point Defects";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7 (1988), 2; S. 174 - 180.

    Zusätzliche Informationen

  231. Autor/innen: Andreas Hössinger, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    A. Hössinger, E. Langer, S. Selberherr:
    "Parallelization of a Monte Carlo Ion Implantation Simulator";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 5; S. 560 - 567.

    Zusätzliche Informationen

  232. Autor/innen: Stefan Holzer, E360; Christian Hollauer, E360; Hajdin Ceric, E360; Stephan Wagner, E360; Erasmus Langer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
    "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
    Proceedings of SPIE, 5837 (2005), S. 380 - 387.

    Zusätzliche Informationen

  233. Autor/innen: Stefan Holzer, E360; R. Minixhofer; Clemens Heitzinger, E360; Johannes Fellner; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
    "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
    Microelectronics Journal, 35 (2004), 10; S. 805 - 810.

    Zusätzliche Informationen

  234. Autor/innen: Stefan Holzer, E360; Alireza Sheikholeslami, E360; Markus Karner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
    "Comparison of Deposition Models for a TEOS LPCVD Process";
    Microelectronics Reliability, 47 (2007), 4-5; S. 623 - 625.

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  235. Autor/innen: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Strain Induced Mobility Modulation in Single-Layer MoS2";
    Journal of Physics D: Applied Physics, 48 (2015), 37; S. 375104-1 - 375104-11.

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  236. Autor/innen: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( M = Mo, W ; X = S , Se)";
    IEEE Transactions on Electron Devices, 62 (2015), 10; S. 3192 - 3198.

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  237. Autor/innen: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Very Large Strain Gauges Based on Single Layer MoSe2 and WSe2 for Sensing Applications";
    Applied Physics Letters, 107 (2015), 25; S. 253503-1 - 253503-4.

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  238. Autor/innen: R Huang; W. Robl; Hajdin Ceric, E360; T. Detzel; G. Dehm

    R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm:
    "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing";
    IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; S. 47 - 54.

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  239. Autor/innen: R Huang; A. Taylor; S. Himmelsbach; Hajdin Ceric, E360; T. Detzel

    R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel:
    "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing";
    Measurement Science & Technology, 21 (2010), 5; S. 55702 - 55710.

  240. Autor/innen: Yuri Illarionov; Theresia Knobloch, E360; Tibor Grasser, E360

    Y. Illarionov, T. Knobloch, T. Grasser:
    "Inorganic Molecular Crystals for 2D Electronics";
    Nature Electronics, 4 (2022), 12; S. 870 - 871.

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  241. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; Theresia Knobloch, E360; Michael Thesberg, E360; Lukas Mennel, E387-01; Matthias Paur, E387-01; Michael Stöger-Pollach, E057-02; Andreas Steiger-Thirsfeld, E057-02; M. I. Vexler; Michael Waltl, E360; N. S. Sokolov; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
    "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
    Nature Electronics, 2 (2019), S. 230 - 235.

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  242. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; Theresia Knobloch, E360; Michael Thesberg, E360; M. I. Vexler; Michael Waltl, E360; Mario Lanza; N. S. Sokolov; Alexander Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
    "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
    2D Materials, 6 (2019), 4; S. 045004.

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  243. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; N. S. Sokolov; Stefan Wachter, E387-01; M. I. Vexler

    Yu. Illarionov, A. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler:
    "Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)";
    Technical Physics Letters, 44 (2018), 12; S. 1188 - 1191.

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  244. Autor/innen: Yury Illarionov, E360; Markus Bina; S. E. Tyaginov, E360; Tibor Grasser, E360

    Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
    "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs";
    Japanese Journal of Applied Physics, 53 (2014), S. 04EC22-1 - 04EC22-4.

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  245. Autor/innen: Yury Illarionov, E360; Markus Bina; S. E. Tyaginov, E360; Karina Rott; Ben Kaczer; H. Reisinger; Tibor Grasser, E360

    Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
    "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
    IEEE Transactions on Electron Devices, 62 (2015), 9; S. 2730 - 2737.

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  246. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, T. Grasser:
    "Crystalline Insulators for Scalable 2D Nanoelectronics";
    Solid-State Electronics, 185 (2021), S. 108043-1 - 108043-3.

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  247. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, T. Grasser:
    "Native High-k Oxides for 2D Transistors";
    Nature Electronics, 3 (2020), S. 442 - 443.

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  248. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Markus Jech, E360; Mario Lanza; D. Akinwande; M. I. Vexler; Thomas Müller, E387-01; M Lemme; G Fiori; Frank Schwierz, TU Ilmenau; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser:
    "Insulators for 2D Nanoelectronics: The Gap to Bridge";
    Nature Communications, 11 (2020), S. 3385.

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  249. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Michael Waltl, E360; Gerhard Rzepa, E360; Andreas Pospischil, E387-01; Dmitry K. Polyushkin, E387-01; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
    "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
    2D Materials, 4 (2017), 2; S. 025108-1 - 025108-10.

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  250. Autor/innen: Yury Illarionov, E360; Gerhard Rzepa, E360; Michael Waltl, E360; Theresia Knobloch, E360; Alexander Grill, E360; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
    "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
    2D Materials, 3 (2016), 3; S. 035004-1 - 035004-10.

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  251. Autor/innen: Yury Illarionov, E360; A.D. Smith; S. Vaziri; M. Ostling; Thomas Müller, E387-01; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
    "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
    Applied Physics Letters, 105 (2014), 14; S. 1435071 - 1435075.

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  252. Autor/innen: Yury Illarionov, E360; Anderson Smith; S. Vaziri; M. Ostling; Thomas Müller, E387-01; M Lemme; Tibor Grasser, E360

    Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
    "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
    IEEE Transactions on Electron Devices, 62 (2015), 11; S. 3876 - 3881.

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  253. Autor/innen: Yury Illarionov, E360; Kirby K.H. Smithe; Michael Waltl, E360; Theresia Knobloch, E360; Eric Pop; Tibor Grasser, E360

    Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
    "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
    IEEE Electron Device Letters, 38 (2017), 12; S. 1763 - 1766.

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  254. Autor/innen: Yury Illarionov, E360; M. I. Vexler; V. V. Fedorov; S. M. Suturin; N. S. Sokolov

    Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
    "Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes";
    Journal of Applied Physics, 115 (2014), S. 223706-1 - 223706-5.

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  255. Autor/innen: Yury Illarionov, E360; M. I. Vexler; V. V. Fedorov; S. M. Suturin; N. S. Sokolov

    Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
    "Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer";
    Thin Solid Films, 545 (2013), S. 580 - 583.

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  256. Autor/innen: Yury Illarionov, E360; M. I. Vexler; Markus Karner, E360; S. E. Tyaginov, E360; Johann Cervenka, E360; Tibor Grasser, E360

    Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
    "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
    Current Applied Physics, 15 (2015), S. 78 - 83.

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  257. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; Gerhard Rzepa, E360; J.-S. Kim; Seohee Kim; Ananth Dodabalapur; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
    "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
    ACS Nano, 10 (2016), 10; S. 9543 - 9549.

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  258. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; Gerhard Rzepa, E360; Theresia Knobloch, E360; J.-S. Kim; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
    "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
    npj 2D Materials and Applications, 1 (2017), 1; S. 23-1 - 23-7.

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  259. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; A.D. Smith; S. Vaziri; M. Ostling; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
    "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
    Japanese Journal of Applied Physics, 55 (2016), 4S; S. 04EP03.

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  260. Autor/innen: Markus Jech, E360; Al-Moatasem El-Sayed, E360; S. E. Tyaginov, E360; A. L. Shluger; Tibor Grasser, E360

    M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
    "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces";
    Physical Review B, 100 (2019), S. 195302.

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  261. Autor/innen: Markus Jech, E360; Al-Moatasem El-Sayed, E360; S. E. Tyaginov, E360; Dominic Waldhör, E360; Foudhil Bouakline; Peter Saalfrank; Dominic Jabs; C. Jungemann; Michael Waltl, E360; Tibor Grasser, E360

    M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
    "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
    Physical Review Applied, 16 (2021), 1; S. 014026 -1 - 014026 -24.

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  262. Autor/innen: Markus Jech, E360; Gunnar Andreas Rott; H. Reisinger; S. E. Tyaginov; Gerhard Rzepa; Alexander Grill; Dominic Jabs; C. Jungemann; Michael Waltl, E360; Tibor Grasser, E360

    M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
    "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities";
    IEEE Transactions on Electron Devices, 67 (2020), 8; S. 3315 - 3322.

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  263. Autor/innen: Markus Jech, E360; Prateek Sharma, E360; S. E. Tyaginov, E360; Florian Rudolf, E360; Tibor Grasser, E360

    M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
    "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
    Japanese Journal of Applied Physics, 55 (2016), 4S; S. 1 - 6.

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  264. Autor/innen: Markus Jech, E360; Bianka Ullmann, E360; Gerhard Rzepa, E360; S. E. Tyaginov, E360; Alexander Grill, E360; Michael Waltl, E360; Dominic Jabs; C. Jungemann; Tibor Grasser, E360

    M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
    "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
    IEEE Transactions on Electron Devices, 66 (2019), 1; S. 241 - 248.

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  265. Autor/innen: Xu Jing; Yury Illarionov, E360; Eilam Yalon; Peng Zhou; Tibor Grasser, E360; Yuanyuan Shi; Mario Lanza

    X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza:
    "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects";
    Advanced Functional Materials, 30 (2019), 18; S. 1901971.

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  266. Autor/innen: Xu Jing; Emanuel Panholzer; Xiaoxue Song; Enric Grustan-Gutierrez; Fei Hui; Yuanyuan Shi; Guenther Benstetter; Yury Illarionov, E360; Tibor Grasser, E360; Mario Lanza

    X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
    "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
    Nano Energy, 30 (2016), S. 494 - 502.

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  267. Autor/innen: Nils Petter Jorstad, E360; Simone Fiorentini, E360; Wilton Jaciel Loch, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    N. Jorstad, S. Fiorentini, W.J. Loch, W. Goes, S. Selberherr, V. Sverdlov:
    "Finite Element Modeling of Spin-Orbit Torques";
    Solid-State Electronics, 194 (2022), S. 108323-1 - 108323-4.

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  268. Autor/innen: Werner Jüngling, E360; E. Guerrero; Siegfried Selberherr, E360

    W. Jüngling, E. Guerrero, S. Selberherr:
    "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation";
    COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3 (1984), 2; S. 79 - 105.

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  269. Autor/innen: Werner Jüngling, E360; P. Pichler, E366; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
    IEEE Transactions on Electron Devices, 32 (1985), 2; S. 156 - 167.

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  270. Autor/innen: Werner Jüngling, E360; P. Pichler, E366; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
    IEEE Journal of Solid-State Circuits, 20 (1985), 1; S. 76 - 87.

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  271. Autor/innen: C. Jungemann; Tibor Grasser, E360; Burkhard Neinhüs; Bernd Meinerzhagen

    C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
    "Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium";
    IEEE Transactions on Electron Devices, 52 (2005), 11; S. 2404 - 2408.

  272. Autor/innen: M Jurkovic; Dagmar Gregusova; Vassil Palankovski, E360; S. Hascik; M. Blaho; Karol Cico; K. Frohlich; J.-F Carlin; Nicolas Grandjean; J. Kuzmik

    M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik:
    "Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region";
    IEEE Electron Device Letters, 34 (2013), 3; S. 432 - 434.

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  273. Autor/innen: Ben Kaczer; J. Franco; Ph. J. Roussel; G. Groeseneken; T. Chiarella; N. Horiguchi; Tibor Grasser, E360

    B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
    "Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
    IEEE Electron Device Letters, 36 (2015), 4; S. 300 - 302.

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  274. Autor/innen: Ben Kaczer; J. Franco; S. E. Tyaginov, E360; Markus Jech, E360; Gerhard Rzepa, E360; Tibor Grasser, E360; Barry J. O´Sullivan; Romain Ritzenhaler; Tom Schram; Alessio Spessot; D Linten; N. Horiguchi

    B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
    "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
    Journal of Vacuum Science & Technology B, 35 (2017), 1; S. 01A109-1 - 01A109-6.

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  275. Autor/innen: Ben Kaczer; J. Franco; P. Weckx; Ph. J. Roussel; Vamsi Putcha; E. Bury; Marko Simicic; A Chasin; D Linten; Bertrand Parvais; F. Catthoor; Gerhard Rzepa, E360; Michael Waltl, E360; Tibor Grasser, E360

    B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser:
    "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability";
    Microelectronics Reliability (eingeladen), 81 (2018), S. 186 - 194.

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  276. Autor/innen: Ben Kaczer; J. Franco; P. Weckx; Ph. J. Roussel; Marko Simicic; Vamsi Putcha; E. Bury; M. Cho; R. Degraeve; D Linten; G. Groeseneken; Peter Debacker; Bertrand Parvais; P. Raghavan; F. Catthoor; Gerhard Rzepa, E360; Michael Waltl, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
    "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
    Solid-State Electronics, 125 (2016), S. 52 - 62.

    Zusätzliche Informationen

  277. Autor/innen: Ben Kaczer; Tibor Grasser, E360; J. Franco; M. Toledano-Luque; Ph. J. Roussel; M. Cho; E. Simoen; G. Groeseneken

    B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
    "Recent Trends in Bias Temperature Instability";
    Journal of Vacuum Science & Technology B (eingeladen), 29 (2011), S. 01AB01-1 - 01AB01-7.

  278. Autor/innen: Ben Kaczer; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
    IEEE Electron Device Letters, 31 (2010), 5; S. 411 - 413.

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  279. Autor/innen: Ben Kaczer; M. Toledano-Luque; Wolfgang Gös, E360; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken:
    "Gate Current Random Telegraph Noise and Single Defect Conduction";
    Microelectronic Engineering, 109 (2013), S. 123 - 125.

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  280. Autor/innen: Ben Kaczer; A. Veloso; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks";
    Journal of Vacuum Science & Technology B, 27 (2009), 1; S. 459 - 462.

  281. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360

    G. Kaiblinger-Grujin, H. Kosina:
    "An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
    VLSI Design, 6 (1998), 1-4; S. 209 - 212.

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  282. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Christian Köpf, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
    "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
    Materials Science Forum, 258-263 (1997), S. 939 - 944.

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  283. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Influence of the Doping Element on the Electron Mobility in n-Silicon";
    Journal of Applied Physics, 83 (1998), 6; S. 3096 - 3101.

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  284. Autor/innen: Markus Kampl, E360; Hans Kosina, E360

    M. Kampl, H. Kosina:
    "The Backward Monte Carlo Method for Semiconductor Device Simulation";
    Journal of Computational Electronics, 17 (2018), 4; S. 1492 - 1504.

    Zusätzliche Informationen

  285. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mohsen Karami Taheri; R. Faez; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina:
    "Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method";
    Journal of Electronic Materials, 42 (2013), 7; S. 2091 - 2097.

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  286. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires";
    Journal of Applied Physics, 115 (2014), S. 024302_1 - 024302_7.

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  287. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation";
    Journal of Applied Physics, 113 (2013), 20; S. 204305-1 - 204305-9.

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  288. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires";
    Journal of Electronic Materials, 1 (2013), S. 1 - 8.

    Zusätzliche Informationen

  289. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina:
    "Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons";
    Journal of Applied Physics, 111 (2012), 5; S. 054501-1 - 054501-9.

    Zusätzliche Informationen

  290. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
    "Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method";
    Journal of Computational Electronics (eingeladen), 11 (2012), 1; S. 14 - 21.

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  291. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons";
    IEEE Transactions on Electron Devices, 60 (2013), 7; S. 2142 - 2147.

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  292. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices";
    Journal of Applied Physics, 110 (2011), 5; S. 054506-1 - 054506-6.

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  293. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; Hans Kosina, E360; Neophytos Neophytou, E360

    H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou:
    "Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons";
    Physical Review B, 91 (2015), 16; S. 165410-1 - 165410-15.

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  294. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; M. Pazoki; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina:
    "Graphene-Based Antidots for Thermoelectric Applications";
    Journal of the Electrochemical Society, 158 (2011), 12; S. K213 - K216.

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  295. Autor/innen: G.G. Kareva; M. I. Vexler; Yury Illarionov, E360

    G.G. Kareva, M. I. Vexler, Yu. Illarionov:
    "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
    Microelectronic Engineering, 109 (2013), S. 270 - 273.

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  296. Autor/innen: Gerhard Karlowatz, E360; Wilfried Wessner, E360; Hans Kosina, E360

    G. Karlowatz, W. Wessner, H. Kosina:
    "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
    Mathematics and Computers in Simulation, 79 (2008), S. 972 - 979.

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  297. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Mahdi Pourfath, E360; Martin Wagner, E360; Wolfgang Gös, E360; Martin Vasicek, E360; Oskar Baumgartner, E360; Christian Kernstock; Klaus Schnass; Gerhard Zeiler; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
    "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
    Journal of Computational Electronics, 6 (2007), 1-3; S. 179 - 182.

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  298. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Hans Kosina, E360

    M. Karner, A. Gehring, H. Kosina:
    "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
    Journal of Computational Electronics, 5 (2006), S. 161 - 165.

    Zusätzliche Informationen

  299. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Martin Wagner, E360; Robert Entner, E360; Stefan Holzer, E360; Wolfgang Gös, E360; Martin Vasicek, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
    "VSP - A Gate Stack Analyzer";
    Microelectronics Reliability, 47 (2007), 4-5; S. 704 - 708.

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  300. Autor/innen: Wolfgang Kausel, E360; J.O. Nylander; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl:
    "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts";
    Microelectronics Journal, 21 (1990), 5; S. 5 - 21.

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  301. Autor/innen: Wolfgang Kausel, E360; Hans Pötzl, E366; Gerd Nanz, E360; Siegfried Selberherr, E360

    W. Kausel, H. Pötzl, G. Nanz, S. Selberherr:
    "Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor";
    Solid-State Electronics, 32 (1989), 9; S. 685 - 709.

    Zusätzliche Informationen

  302. Autor/innen: Kaveh Khaliji; M. Noei; Seyed Mohammad Tabatabaei; Mahdi Pourfath, E360; M. Fathipour; Yaser Abdi

    K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi:
    "Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain";
    IEEE Transactions on Electron Devices, 60 (2013), 8; S. 2464 - 2470.

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  303. Autor/innen: N. Khalil; John Faricelli; D. Bell; Siegfried Selberherr, E360

    N. Khalil, J. Faricelli, D. Bell, S. Selberherr:
    "The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling";
    IEEE Electron Device Letters, 16 (1995), 1; S. 17 - 19.

    Zusätzliche Informationen

  304. Autor/innen: N. Khalil; John Faricelli; C.-L. Huang; Siegfried Selberherr, E360

    N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
    "Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
    Journal of Vacuum Science & Technology B, 14 (1996), 1; S. 224 - 230.

    Zusätzliche Informationen

  305. Autor/innen: Sajid Khan; Ambika Shah, E360; Shailesh Singh Chouhan; Neha Gupta; Jai Gopal Pandey; Santosh Kumar Vishvakarma

    S. Khan, A. Shah, S. Chouhan, N. Gupta, J. Pandey, S. Vishvakarma:
    "A Symmetric D Flip-Flop Based PUF with Improved Uniqueness";
    Microelectronics Reliability, 106 (2020), S. 113595.

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  306. Autor/innen: Sajid Khan; Ambika Shah, E360; Neha Gupta; Shailesh Singh Chouhan; Jai Gopal Pandey; Santosh Kumar Vishvakarma

    S. Khan, A. Shah, N. Gupta, S. Chouhan, J. Pandey, S. Vishvakarma:
    "An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications";
    Microelectronics Journal, 92 (2019), S. 104605.

    Zusätzliche Informationen

  307. Autor/innen: Sang-Cheol Kim; W Bahng; N.-K. Kim; E.-D. Kim; Tesfaye Ayalew, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
    "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
    Materials Science Forum, 483-485 (2005), S. 793 - 796.

    Zusätzliche Informationen

  308. Autor/innen: Yusuf Kinkhabwala; Viktor Sverdlov, E360; Alexander N Korotkov; Konstantin Likharev

    Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev:
    "A Numerical Study of Transport and Shot Noise in 2D Hopping";
    Journal of Physics: Condensed Matter, 18 (2006), S. 1999 - 2012.

  309. Autor/innen: Yusuf Kinkhabwala; Viktor Sverdlov, E360; Konstantin Likharev

    Y. Kinkhabwala, V. Sverdlov, K. Likharev:
    "A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport";
    Journal of Physics: Condensed Matter, 18 (2006), S. 2013 - 2027.

  310. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 12; S. 1431 - 1438.

    Zusätzliche Informationen

  311. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Photolithography Simulation";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 6; S. 1 - 37.

    Zusätzliche Informationen

  312. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination";
    Proceedings of SPIE, 3334 (1998), S. 764 - 776.

    Zusätzliche Informationen

  313. Autor/innen: M Kittler; Manfred Reiche; Bernhard Schwartz; H Uebensee; Hans Kosina, E360; Zlatan Stanojevic; Oskar Baumgartner; Thomas Ortlepp

    M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, T. Ortlepp:
    "Transport of Charge Carriers along Dislocations in Si and Ge";
    Physica Status Solidi A, 216 (2019), 17; S. 1900287.

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  314. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures";
    Computer Methods in Applied Mechanics and Engineering, 386 (2021), S. 114196-1 - 114196-22.

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  315. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review";
    Micromachines (eingeladen), 9 (2018), 12; S. 631-1 - 631-31.

    Zusätzliche Informationen

  316. Autor/innen: Martin Knaipp, E360; Werner Kanert; Siegfried Selberherr, E360

    M. Knaipp, W. Kanert, S. Selberherr:
    "Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
    Solid-State Electronics, 44 (2000), 7; S. 1135 - 1143.

    Zusätzliche Informationen

  317. Autor/innen: Theresia Knobloch, E360; Uzlu Burkay, Aachen University; Yury Illarionov, E360; Zhenxing Wang, AMO GmbH, Aachen, G; Martin Otto, AMO GmbH, Aachen, Ge; Lado Filipovic, E360; Michael Waltl, E360; Daniel Neumaier, AMO GmbH, Germany; Max C Lemme, Aachen University; Tibor Grasser, E360

    T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
    "Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning";
    Nature Electronics, 5 (2022), S. 356 - 366.

    Zusätzliche Informationen

  318. Autor/innen: Theresia Knobloch, E360; Yury Illarionov, E360; Fabian Ducry; Christian Schleich, E360; Stefan Wachter, E362; Kenji Watanabe; Takashi Taniguchi; Thomas Müller, E387-01; Michael Waltl, E360; Mario Lanza; M. I. Vexler; Mathieu Luisier; Tibor Grasser, E360

    T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
    "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
    Nature Electronics, 4 (2021), 2; S. 98 - 108.

    Zusätzliche Informationen

  319. Autor/innen: Theresia Knobloch, E360; Gerhard Rzepa, E360; Yury Illarionov, E360; Michael Waltl, E360; F. Schanovski; Bernhard Stampfer, E360; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
    "A Physical Model for the Hysteresis in MoS2 Transistors";
    IEEE Journal of the Electron Devices Society, 6 (2018), 1; S. 972 - 978.

    Zusätzliche Informationen

  320. Autor/innen: Theresia Knobloch, E360; Siegfried Selberherr, E360; Tibor Grasser, E360

    T. Knobloch, S. Selberherr, T. Grasser:
    "Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials";
    Nanomaterials (eingeladen), 12 (2022), 3548.

    Zusätzliche Informationen

  321. Autor/innen: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
    Solid-State Electronics, 41 (1997), 8; S. 1139 - 1152.

    Zusätzliche Informationen

  322. Autor/innen: Robert Kosik, E360; Johann Cervenka, E360; Hans Kosina, E360

    R. Kosik, J. Cervenka, H. Kosina:
    "Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation";
    Journal of Computational Electronics, 20 (2021), 6; S. 2052 - 2061.

    Zusätzliche Informationen

  323. Autor/innen: Robert Kosik, E360; Peter Fleischmann, E360; Bernhard Haindl, E384; P. Pietra; Siegfried Selberherr, E360

    R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr:
    "On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 11; S. 1233 - 1240.

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  324. Autor/in: Hans Kosina, E360

    H. Kosina:
    "A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis";
    IEEE Transactions on Electron Devices, 46 (1999), 6; S. 1196 - 1200.

  325. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations";
    Physica Status Solidi A, 163 (1997), 2; S. 475 - 489.

  326. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
    International Journal of High Speed Electronics and Systems, 17 (2007), 3; S. 475 - 484.

    Zusätzliche Informationen

  327. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Wigner function approach to nano device simulation";
    International Journal of Computational Science and Engineering, 2 (2006), 3/4; S. 100 - 118.

    Zusätzliche Informationen

  328. Autor/innen: Hans Kosina, E360; Markus Gritsch, E360; Tibor Grasser, E360; Siegfried Selberherr, E360; T. Linton; S. Yu; M. Giles

    H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
    "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
    Journal of Computational Electronics, 1 (2002), 3; S. 371 - 374.

    Zusätzliche Informationen

  329. Autor/innen: Hans Kosina, E360; Manfred Harrer

    H. Kosina, M. Harrer:
    "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
    VLSI Design, 6 (1998), 1-4; S. 205 - 208.

    Zusätzliche Informationen

  330. Autor/innen: Hans Kosina, E360; Goran Kaiblinger-Grujin, E360

    H. Kosina, G. Kaiblinger-Grujin:
    "Ionized-Impurity Scattering of Majority Electrons in Silicon";
    Solid-State Electronics, 42 (1998), 3; S. 331 - 338.

    Zusätzliche Informationen

  331. Autor/innen: Hans Kosina, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    H. Kosina, E. Langer, S. Selberherr:
    "Device Modelling for the 1990s";
    Microelectronics Journal (eingeladen), 26 (1995), 2-3; S. 217 - 233.

    Zusätzliche Informationen

  332. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov; Siegfried Selberherr, E360

    H. Kosina, M Nedjalkov, S. Selberherr:
    "Solution of the Space-dependent Wigner Equation Using a Particle Model";
    Monte Carlo Methods and Applications, 10 (2004), 3-4; S. 359 - 368.

    Zusätzliche Informationen

  333. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360

    H. Kosina, M. Nedjalkov:
    "Particle Models for Device Simulation";
    International Journal of High Speed Electronics and Systems (eingeladen), 13 (2003), 13; S. 727 - 769.

  334. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360

    H. Kosina, M. Nedjalkov:
    "The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices";
    Mathematics and Computers in Simulation, 55 (2001), S. 93 - 102.

  335. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
    Journal of Applied Physics, 87 (2000), 9; S. 4308 - 4314.

    Zusätzliche Informationen

  336. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
    Journal of Computational Electronics, 2 (2003), 2-4; S. 147 - 151.

    Zusätzliche Informationen

  337. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "An Event Bias Technique for Monte Carlo Device Simulation";
    Mathematics and Computers in Simulation, 62 (2003), 3-6; S. 367 - 375.

    Zusätzliche Informationen

  338. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "The Stationary Monte Carlo Method for Device Simulation. I. Theory";
    Journal of Applied Physics, 93 (2003), 6; S. 3553 - 3563.

    Zusätzliche Informationen

  339. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Theory of the Monte Carlo Method for Semiconductor Device Simulation";
    IEEE Transactions on Electron Devices, 47 (2000), 10; S. 1898 - 1908.

    Zusätzliche Informationen

  340. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13 (1994), 2; S. 201 - 210.

    Zusätzliche Informationen

  341. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors";
    Japanese Journal of Applied Physics, 29 (1990), 12; S. L2283 - L2285.

    Zusätzliche Informationen

  342. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Device Simulation Demands of Upcoming Microelectronic Devices";
    International Journal of High Speed Electronics and Systems, 16 (2006), 1; S. 115 - 136.

    Zusätzliche Informationen

  343. Autor/innen: Hans Kosina, E360; Christian Troger, E360

    H. Kosina, C. Troger:
    "SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands";
    VLSI Design, 8 (1998), 1-4; S. 489 - 493.

    Zusätzliche Informationen

  344. Autor/innen: Tejas Krishnamohan; C. Jungemann; Donghyun Kim; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360; A.-T Pham; Bernd Meinerzhagen; Philip Wong; Y Nishida; Krishna Saraswat

    T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat:
    "High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs";
    Microelectronic Engineering, 84 (2007), 9-10; S. 2063 - 2066.

    Zusätzliche Informationen

  345. Autor/innen: J. Kuzmik; Milan Tapajna; Lukas Válik; Marian Molnar, E360; D Donoval; Clement Fleury, E362; Dionyz Pogany, E362; Gottfried Strasser, E362; O Hilt; Frank Brunner; Joachim Würfl

    J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl:
    "Self-Heating in GaN Transistors Designed for High-Power Operation";
    IEEE Transactions on Electron Devices, 61 (2014), 10; S. 3429 - 3434.

    Zusätzliche Informationen

  346. Autor/innen: Jan Kuzmik, E362; Stanislav Vitanov, E360; C Dua; Jean-François Carlin; Clemens Ostermaier, E362; Alexander Alexewicz, E362; Gottfried Strasser, E362; Dionyz Pogany, E362; Erich Gornik, E362; Nicolas Grandjean; S.L. Delage; Vassil Palankovski, E360

    J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski:
    "Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors";
    Japanese Journal of Applied Physics, 51 (2012), S. 054102-1 - 054102-5.

    Zusätzliche Informationen

  347. Autor/innen: Ayoub Lahlalia, E360; Lado Filipovic, E360; Siegfried Selberherr, E360

    A. Lahlalia, L. Filipovic, S. Selberherr:
    "Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices";
    IEEE Sensors Journal, 18 (2018), 5; S. 1960 - 1970.

    Zusätzliche Informationen

  348. Autor/innen: Ayoub Lahlalia, E360; Olivier Le Neel; Ravi Shankar; Shian-Yeu Kam; Lado Filipovic, E360

    A. Lahlalia, O. Le Neel, R. Shankar, S.-Y. Kam, L. Filipovic:
    "Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors";
    Journal Of Microelectromechanical Systems, 27 (2018), 3; S. 529 - 537.

    Zusätzliche Informationen

  349. Autor/innen: Ayoub Lahlalia, E360; Oliver Le Neel; Ravi Shankar; Siegfried Selberherr, E360; Lado Filipovic, E360

    A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
    "Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices";
    Sensors, 19 (2019), 2; S. 374-1 - 374-14.

    Zusätzliche Informationen

  350. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Fundamental Analysis of Surface Acoustic Wave Propagation";
    Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; S. 225 - 232.

  351. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Fundamental Analysis of Surface Acoustic Wave Propagation";
    International Journal of Engineering Science, 29 (1991), 3; S. 331 - 343.

    Zusätzliche Informationen

  352. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Special Issue on "Semiconductor devices and electronic circuit design"";
    Electrosoft, 1 (1990), 4.

  353. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "A Numerical Analysis of Bulk-Barrier Diodes";
    Solid-State Electronics, 25 (1982), 4; S. 317 - 324.

    Zusätzliche Informationen

  354. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "Numerische Analyse der Bulk-Barrier Diode";
    Archiv für Elektronik und Übertragungstechnik, 36 (1982), 2; S. 86 - 91.

  355. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; Peter A. Markowich; Ch. Ringhofer

    E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
    "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
    Sensors and Actuators, 4 (1983), 1; S. 71 - 76.

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  356. Autor/innen: Ernst Leitner, E360; Siegfried Selberherr, E360

    E. Leitner, S. Selberherr:
    "Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 7; S. 561 - 572.

    Zusätzliche Informationen

  357. Autor/innen: P. M. Lenahan; B. Knowlton; J. F. Conley; B. Tonti; J. Suehle; Tibor Grasser, E360

    P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser:
    "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop";
    IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; S. 490.

  358. Autor/innen: Christoph Lenz, E360; Paul Manstetten, E360; Luiz Felipe Aguinsky, E360; Francio Rodrigues, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    C. Lenz, P. Manstetten, L.F. Aguinsky, F. Rodrigues, A. Hössinger, J. Weinbub:
    "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations";
    Solid-State Electronics (eingeladen), 200 (2022), 10258.

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  359. Autor/innen: Christoph Lenz, E360; Alexander Toifl, E360; Michael Quell, E360; Francio Rodrigues, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub:
    "Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
    Solid-State Electronics (eingeladen), 191 (2022), S. 108258-1 - 108258-8.

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  360. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Analytical Conductivity Model for Doped Organic Semiconductors";
    Journal of Applied Physics, 101 (2007), 033716; S. 1 - 4.

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  361. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Carrier Concentration Dependence of the Mobility in Organic Semiconductors";
    Synthetic Metals, 157 (2007), S. 243 - 246.

    Zusätzliche Informationen

  362. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes";
    Applied Physics Letters, 91 (2007), 17; S. 1 - 3.

    Zusätzliche Informationen

  363. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Influence of Traps on Charge Transport in Organic Semiconductors";
    Solid-State Electronics, 51 (2007), S. 445 - 448.

    Zusätzliche Informationen

  364. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors";
    Microelectronics Journal, 38 (2006), 1; S. 47 - 51.

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  365. Autor/innen: Wilton Jaciel Loch, E360-01; Simone Fiorentini, E360; Nils Petter Jorstad, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    W.J. Loch, S. Fiorentini, N. Jorstad, W. Goes, S. Selberherr, V. Sverdlov:
    "Double Reference Layer STT-MRAM Structures with Improved Performance";
    Solid-State Electronics, 194 (2022), S. 108335-1 - 108335-4.

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  366. Autor/innen: J. Lorenz; E. Bär; T. Clees; P. Evanschitzky; Roland Jancke; C. Kampen; U. Paschen; C. Salzig; Siegfried Selberherr, E360

    J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr:
    "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results";
    IEEE Transactions on Electron Devices (eingeladen), 58 (2011), 8; S. 2227 - 2234.

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  367. Autor/innen: J. Lorenz; E. Bär; T. Clees; Roland Jancke; C. Salzig; Siegfried Selberherr, E360

    J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr:
    "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology";
    IEEE Transactions on Electron Devices (eingeladen), 58 (2011), 8; S. 2218 - 2226.

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  368. Autor/innen: Bruno Lorenzi; Dario Narducci; R. Tonini; Stefano Frabboni; Gian Carlo Gazzadi; G. Ottaviani; Neophytos Neophytou, E360; Xanthippe Zianni

    B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
    "Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids";
    Journal of Electronic Materials, 43 (2014), 10; S. 3812 - 3816.

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  369. Autor/innen: Alois Lugstein, E362; Mathias Steinmair; Andreas Steiger-Thirsfeld, E362; Hans Kosina, E360; Emmerich Bertagnolli, E362

    A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
    "Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires";
    Nano Letters, 10 (2010), S. 3204 - 3208.

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  370. Autor/innen: J. Machek; Siegfried Selberherr, E360

    J. Machek, S. Selberherr:
    "A Novel Finite-Element Approach to Device Modeling";
    IEEE Transactions on Electron Devices, 30 (1983), 9; S. 1083 - 1092.

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  371. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
    Journal of Superconductivity and Novel Magnetism, 26 (2013), 5; S. 1745 - 1749.

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  372. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
    Solid-State Electronics, 84 (2013), S. 191 - 197.

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  373. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
    IEEE Transactions on Magnetics, 49 (2013), 12; S. 5620 - 5628.

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  374. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
    Advanced Materials Research - Print/CD, 854 (2014), S. 89 - 95.

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  375. Autor/innen: Alexander Makarov, E360; Ben Kaczer; A Chasin; Michiel Vandemaele; E. Bury; Markus Jech, E360; Alexander Grill; Geert Hellings; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
    "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
    IEEE Electron Device Letters, 40 (2019), 10; S. 1579 - 1582.

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  376. Autor/innen: Alexander Makarov, E360; Ben Kaczer; Philippe Roussel; A Chasin; Alexander Grill; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
    "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
    IEEE Electron Device Letters, 40 (2019), 6; S. 870 - 873.

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  377. Autor/innen: Alexander Makarov, E360; Philippe Roussel; Erik Bury; Michiel Vandemaele; Alessio Spessot; Dimitri Linten; Ben Kaczer; S. E. Tyaginov, E360

    A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
    "Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach";
    Micromachines, 11 (2020), 7; S. 675.

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  378. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
    IEEE Transactions on Magnetics, 48 (2012), 4; S. 1289 - 1292.

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  379. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
    Physica Status Solidi - Rapid Research Letters, 5 (2011), 12; S. 420 - 422.

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  380. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
    Microelectronics Reliability (eingeladen), 52 (2012), 4; S. 628 - 634.

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  381. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
    International Journal of High Speed Electronics and Systems (eingeladen), 23 (2014), 3&4; S. 1450014-1 - 1450014-15.

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  382. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
    Journal of Vacuum Science & Technology B, 29 (2011), 1; S. 01AD03-1 - 01AD03-5.

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  383. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
    Journal of Computational Electronics, 9 (2010), 3-4; S. 146 - 152.

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  384. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Proceedings of SPIE (eingeladen), 8813 (2013), S. 88132Q-1 - 88132Q-9.

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  385. Autor/innen: Alexander Makarov, E360; S. E. Tyaginov, E360; Ben Kaczer; Markus Jech, E360; A Chasin; Alexander Grill; Geert Hellings; M. I. Vexler; D Linten; Tibor Grasser, E360

    A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
    "Analysis of the Features of Hot-Carrier Degradation in FinFETs";
    Semiconductors (Physics of Semiconductor Devices), 52 (2018), 10; S. 1177 - 1182.

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  386. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "CMOS-Compatible Spintronic Devices: A Review";
    Semiconductor Science and Technology (eingeladen), 31 (2016), 11; S. 113006-1 - 113006-25.

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  387. Autor/innen: Negin Manavizadeh; Farshid Raissi; E.A. Soleimani; Mahdi Pourfath, E360; Siegfried Selberherr, E360

    N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr:
    "Performance Assessment of Nanoscale Field Effect Diodes";
    IEEE Transactions on Electron Devices, 58 (2011), 8; S. 2378 - 2384.

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  388. Autor/innen: Paul Manstetten, E360; Lado Filipovic, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
    "Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
    Solid-State Electronics (eingeladen), 128 (2017), 2; S. 141 - 147.

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  389. Autor/innen: Paul Manstetten, E360; Josef Weinbub, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360

    P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr:
    "Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces";
    Procedia Computer Science, 108 (2017), S. 245 - 254.

    Zusätzliche Informationen

  390. Autor/innen: Peter A. Markowich; Ch. Ringhofer; Erasmus Langer, E360; Siegfried Selberherr, E360

    P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr:
    "An Asymptotic Analysis of Single-Junction Semiconductor Devices";
    MRC Technical Summary Report, 2527 (1983), S. 1 - 62.

  391. Autor/innen: Peter A. Markowich; Ch. Ringhofer; Siegfried Selberherr, E360

    P. Markowich, Ch. Ringhofer, S. Selberherr:
    "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices";
    MRC Technical Summary Report, 2482 (1983), S. 1 - 50.

  392. Autor/innen: Peter A. Markowich; Ch. Ringhofer; Siegfried Selberherr, E360; Erasmus Langer, E360

    P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer:
    "A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device";
    MRC Technical Summary Report, 2388 (1982), S. 1 - 57.

  393. Autor/innen: Peter A. Markowich; Ch. Ringhofer; Siegfried Selberherr, E360; M. Lentini

    P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini:
    "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations";
    IEEE Transactions on Electron Devices, 30 (1983), 9; S. 1165 - 1180.

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  394. Autor/innen: Peter A. Markowich; Siegfried Selberherr, E360

    P. Markowich, S. Selberherr:
    "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
    Matematica Aplicada e Computacional, 3 (1984), 2; S. 131 - 156.

  395. Autor/innen: S. Maroldt; Dirk Wiegner; Stanislav Vitanov, E360; Vassil Palankovski, E360; Rüdiger Quay, E360; O. Ambacher

    S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher:
    "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz";
    IEICE Transactions on Electronics, E93-C (2010), 8; S. 1238 - 1244.

  396. Autor/innen: K. Martens; Ben Kaczer; Tibor Grasser, E360; B. De Jaeger; M. Meuris; H.E. Maes; G. Groeseneken

    K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken:
    "Applicability of Charge Pumping on Germanium MOSFETs";
    IEEE Electron Device Letters, 29 (2008), 12; S. 1364 - 1366.

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  397. Autor/innen: Rui Martins, E360; Wolfgang Pyka, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
    "High-Precision Interconnect Analysis";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 11; S. 1148 - 1159.

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  398. Autor/innen: Rui Martins, E360; Siegfried Selberherr, E360; F. Vaz

    R. Martins, S. Selberherr, F. Vaz:
    "A CMOS IC for Portable EEG Acquisition Systems";
    IEEE Transactions on Instrumentation and Measurement, 47 (1998), 5; S. 1191 - 1196.

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  399. Autor/innen: Christina Medina-Bailon; Toufik Sadi; Mihail Nedjalkov, E360; Hamilton Carillo-Nunez; Jaehyun Lee; Oves Badami; Vihar Georgiev; Siegfried Selberherr, E360; Asen Asenov

    C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov:
    "Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism";
    IEEE Electron Device Letters, 40 (2019), 10; S. 1571 - 1574.

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  400. Autor/innen: Gregor Meller, E360; Ling Li, E360; Stefan Holzer, E360; Hans Kosina, E360

    G. Meller, L. Li, S. Holzer, H. Kosina:
    "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
    Optical and Quantum Electronics, 38 (2006), 12-14; S. 993 - 1004.

    Zusätzliche Informationen

  401. Autor/innen: Gregor Meller, E360; Siegfried Selberherr, E360

    G. Meller, S. Selberherr:
    "Simulation of Injection Currents into Disordered Molecular Conductors";
    Materials Today: Proceedings, 5 (2018), 9; S. 17472 - 17477.

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  402. Autor/innen: Jan-Frederik Mennemann, E101-01; Ansgar Jüngel, E101-01; Hans Kosina, E360

    J.-F. Mennemann, A. Jüngel, H. Kosina:
    "Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator";
    Journal of Computational Physics, 239 (2013), S. 187 - 205.

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  403. Autor/innen: Jakob Michl, E360; Alexander Grill; Dominic Waldhör, E360; Wolfgang Goes, Silvaco; Ben Kaczer; Dimitri Linten; Bertrand Parvais; Bogdan Govoreanu; I Radu; Tibor Grasser, E360; Michael Waltl, E360

    J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
    "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
    IEEE Transactions on Electron Devices, 68 (2021), 12; S. 6372 - 6378.

    Zusätzliche Informationen

  404. Autor/innen: Jakob Michl, E360; Alexander Grill; Dominic Waldhör, E360; Wolfgang Goes, Silvaco; Ben Kaczer; Dimitri Linten; Bertrand Parvais; Bogdan Govoreanu; I Radu; Michael Waltl, E360; Tibor Grasser, E360

    J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
    "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
    IEEE Transactions on Electron Devices, 68 (2021), 12; S. 6365 - 6371.

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  405. Autor/innen: Richard T. Mills; Mark Adams; Satish Balay; Jed Brown; Alp Dener; Matthew Knepley; Scott Kruger; Hannah Morgan; Todd Munson; Karl Rupp, E360; Barry Smith; Stefano Zampini; H Zhang; J. Zhang

    R. Mills, M. Adams, S. Balay, J. Brown, A. Dener, M. Knepley, S. Kruger, H. Morgan, T. Munson, K. Rupp, B. Smith, S. Zampini, H. Zhang, J. Zhang:
    "Toward Performance-Portable PETSc for GPU-based Exascale Systems";
    Parallel Computing, 108 (2021), S. 102831-1 - 102831-16.

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  406. Autor/innen: Goran Milovanovic, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    G. Milovanovic, O. Baumgartner, H. Kosina:
    "On Open Boundary Conditions for Quantum Cascade Structures";
    Optical and Quantum Electronics, 41 (2009), 11-13; S. 921 - 932.

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  407. Autor/innen: Goran Milovanovic, E360; Hans Kosina, E360

    G. Milovanovic, H. Kosina:
    "A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation";
    Journal of Computational Electronics, 9 (2010), 3-4; S. 211 - 217.

    Zusätzliche Informationen

  408. Autor/innen: Ali Mojibpour; Mahdi Pourfath, E360; Hans Kosina, E360

    A. Mojibpour, M. Pourfath, H. Kosina:
    "Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers";
    Optics Express, 22 (2014), 17; S. 20607 - 20612.

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  409. Autor/innen: Marian Molnar, E360; D Donoval; J. Kuzmik; J Marek; A Chvala; P. Pribytny; Vaclav Mikolasek, E191-01; K. Rendek; Vassil Palankovski, E360

    M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski:
    "Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors";
    Applied Surface Science, 312 (2014), S. 157 - 161.

    Zusätzliche Informationen

  410. Autor/innen: Mahdi Moradinasab, E360; Hamed Nematian; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
    "Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons";
    Journal of Applied Physics, 111 (2012), 7; S. 074318-1 - 074318-9.

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  411. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
    "Numerical Study of Graphene Superlattice-Based Photodetectors";
    IEEE Transactions on Electron Devices, 62 (2015), 2; S. 593 - 600.

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  412. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, H. Kosina:
    "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
    IEEE Journal of Quantum Electronics, 51 (2015), 1; S. 1 - 7.

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  413. Autor/innen: Masoud Movahhedi, E360; Abdolali Abdipour; Hajdin Ceric, E360; Alireza Sheikholeslami, E360; Siegfried Selberherr, E360

    M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr:
    "Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method";
    IEEE Microwave and Wireless Components Letters, 17 (2007), 1; S. 10 - 12.

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  414. Autor/innen: Masoud Movahhedi, E360; Abdolali Abdipour; Alexandre Nentchev, E360; Mehdi Dehghan; Siegfried Selberherr, E360

    M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr:
    "Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method";
    IEEE Transactions on Microwave Theory and Techniques, 55 (2007), 6; S. 1322 - 1331.

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  415. Autor/innen: Mikio Mukai; Takaaki Tatsumi; N. Nakauchi; T. Kobayashi; K. Koyama; Y. Komatsu; Robert Bauer, E360; Gerhard Rieger, E360; Siegfried Selberherr, E360

    M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
    "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI";
    Technical Report of IEICE, 95 (1995), 223; S. 63 - 68.

  416. Autor/innen: Gerd Nanz, E360; Peter Dickinger, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, S. Selberherr:
    "Calculation of Contact Currents in Device Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11 (1992), 1; S. 128 - 136.

    Zusätzliche Informationen

  417. Autor/innen: Gerd Nanz, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, W. Kausel, S. Selberherr:
    "Self-Adaptive Space and Time Grids in Device Simulation";
    International Journal for Numerical Methods in Engineering, 31 (1991), 7; S. 1357 - 1374.

    Zusätzliche Informationen

  418. Autor/innen: Dario Narducci; Bruno Lorenzi; Xanthippe Zianni; Neophytos Neophytou, E360; Stefano Frabboni; Gian Carlo Gazzadi; Alberto Roncaglia; Francesco Suriano

    D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano:
    "Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys";
    Physica Status Solidi A, 211 (2014), 6; S. 1255 - 1258.

    Zusätzliche Informationen

  419. Autor/innen: Sanaz Nazemi; Mahdi Pourfath, E360; Ebrahim Asl Soleimani; Hans Kosina, E360

    S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
    "On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals";
    Journal of Applied Physics, 118 (2015), 20; S. 205303-1 - 205303--6.

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  420. Autor/innen: Sanaz Nazemi; Mahdi Pourfath, E360; Ebrahim Asl Soleimani; Hans Kosina, E360

    S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
    "The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO2 Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study";
    Journal of Applied Physics, 114 (2016), 14; S. 144302-1 - 1444302-9.

    Zusätzliche Informationen

  421. Autor/innen: Mihail Nedjalkov, E360; Shaikh Ahmed; Dragica Vasileska

    M. Nedjalkov, S. Ahmed, D. Vasileska:
    "A Self-Consistent Event Biasing Scheme for Statistical Enhancement";
    Journal of Computational Electronics, 3 (2004), 3-4; S. 305 - 309.

  422. Autor/innen: Mihail Nedjalkov, E360; E. Atanassov; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
    "Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
    Monte Carlo Methods and Applications, 10 (2004), 3-4; S. 461 - 468.

    Zusätzliche Informationen

  423. Autor/innen: Mihail Nedjalkov, E360; Mauro Ballicchia, E360; Robert Kosik, E360; Josef Weinbub, E360

    M. Nedjalkov, M. Ballicchia, R. Kosik, J. Weinbub:
    "Gauge-Invariant Semidiscrete Wigner Theory";
    Physical Review A, 106 (2022), 052213.

    Zusätzliche Informationen

  424. Autor/innen: Mihail Nedjalkov, E360; Ivan Dimov; H. Haug

    M. Nedjalkov, I. Dimov, H. Haug:
    "Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering";
    Physica Status Solidi B - Basic Solid State Physics, 209 (1998), 1; S. 109 - 121.

  425. Autor/innen: Mihail Nedjalkov, E360; Paul Ellinghaus, E360; Josef Weinbub, E360; T. Sadi; A Asenov; Ivan Dimov; Siegfried Selberherr, E360

    M. Nedjalkov, P. Ellinghaus, J. Weinbub, T. Sadi, A. Asenov, I. Dimov, S. Selberherr:
    "Stochastic Analysis of Surface Roughness Models in Quantum Wires";
    Computer Physics Communications, 228 (2018), S. 30 - 37.

    Zusätzliche Informationen

  426. Autor/innen: Mihail Nedjalkov, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
    "Transient Model for Terminal Current Noise";
    Applied Physics Letters, 80 (2002), 4; S. 607 - 609.

    Zusätzliche Informationen

  427. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360

    M. Nedjalkov, H. Kosina:
    "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
    Mathematics and Computers in Simulation, 55 (2001), 1-3; S. 191 - 198.

  428. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Robert Kosik, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
    "A Space Dependent Wigner Equation Including Phonon Interaction";
    Journal of Computational Electronics, 1 (2002), 1-2; S. 27 - 31.

    Zusätzliche Informationen

  429. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Robert Kosik, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
    "A Wigner Equation with Quantum Electron-Phonon Interaction";
    Microelectronic Engineering, 63 (2002), 1-3; S. 199 - 203.

    Zusätzliche Informationen

  430. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Philipp Schwaha, E360

    M. Nedjalkov, H. Kosina, P. Schwaha:
    "Device Modeling in the Wigner Picture";
    Journal of Computational Electronics, 9 (2010), 3-4; S. 218 - 223.

    Zusätzliche Informationen

  431. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
    IEICE Transactions on Electronics, E83-C (2000), 8; S. 1218 - 1223.

  432. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Monte Carlo Algorithms for Stationary Device Simulation";
    Mathematics and Computers in Simulation, 62 (2003), 3-6; S. 453 - 461.

    Zusätzliche Informationen

  433. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Stochastic Interpretation of the Wigner Transport in Nanostructures";
    Microelectronics Journal, 34 (2003), 5-8; S. 443 - 445.

    Zusätzliche Informationen

  434. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
    Journal of Applied Physics, 93 (2003), 6; S. 3564 - 3571.

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  435. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Ivan Dimov

    M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
    "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
    VLSI Design, 13 (2001), 1-4; S. 405 - 411.

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  436. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Ch. Ringhofer; D.K. Ferry

    M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
    "Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
    Physical Review B, 70 (2004), 115319; S. 1 - 16.

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  437. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
    "A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
    Semiconductor Science and Technology, 19 (2004), 4; S. 226 - 228.

    Zusätzliche Informationen

  438. Autor/innen: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360; J. M. Sellier; Dragica Vasileska

    M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska:
    "Wigner Quasi-Particle Attributes - An Asymptotic Perspective";
    Applied Physics Letters, 102 (2013), 16; S. 163113-1 - 163113-4.

    Zusätzliche Informationen

  439. Autor/innen: Mihail Nedjalkov, E360; Siegfried Selberherr, E360; D.K. Ferry; Dragica Vasileska; P. Dollfus; D. Querlioz; Ivan Dimov; P. Schwaha

    M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha:
    "Physical Scales in the Wigner-Boltzmann Equation";
    Annals of Physics, 328 (2013), S. 220 - 237.

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  440. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska

    M. Nedjalkov, D. Vasileska:
    "Semi-Discrete 2D Wigner-Particle Approach";
    Journal of Computational Electronics, 7 (2008), 3; S. 222 - 225.

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  441. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska; E. Atanassov; Vassil Palankovski, E360

    M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
    "Ultrafast Wigner Transport in Quantum Wires";
    Journal of Computational Electronics, 6 (2007), S. 235 - 238.

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  442. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska; Ivan Dimov; G. Arsov

    M. Nedjalkov, D. Vasileska, I. Dimov, G. Arsov:
    "Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices";
    Monte Carlo Methods and Applications, 13 (2007), 4; S. 299 - 331.

    Zusätzliche Informationen

  443. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska; D.K. Ferry; C. Jacoboni; Ch. Ringhofer; Ivan Dimov; Vassil Palankovski, E360

    M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski:
    "Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires";
    Physical Review B, 74 (2006), 3; S. 035311-1 - 035311-18.

    Zusätzliche Informationen

  444. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Mauro Ballicchia, E360; Siegfried Selberherr, E360; Ivan Dimov; D.K. Ferry

    M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry:
    "Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform";
    Physical Review B, 99 (2019), 1; S. 014423-1 - 014423-16.

    Zusätzliche Informationen

  445. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Paul Ellinghaus, E360; Siegfried Selberherr, E360

    M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
    "The Wigner Equation in the Presence of Electromagnetic Potentials";
    Journal of Computational Electronics, 14 (2015), 4; S. 888 - 893.

    Zusätzliche Informationen

  446. Autor/innen: Hamed Nematian; Mahdi Moradinasab, E360; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
    "Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices";
    Journal of Applied Physics, 111 (2012), S. 093512-1 - 093512-6.

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  447. Autor/innen: Neophytos Neophytou, E360; Hossein Karamitaheri, E360; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers";
    Journal of Computational Electronics, 12 (2013), 4; S. 611 - 622.

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  448. Autor/innen: Neophytos Neophytou; Hossein Karamitaheri; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study";
    Journal of Electronic Materials, 44 (2015), 6; S. 1599 - 1605.

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  449. Autor/innen: Neophytos Neophytou, E360; S.G. Kim; Gerhard Klimeck; Hans Kosina, E360

    N. Neophytou, S. Kim, G. Klimeck, H. Kosina:
    "On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias";
    Journal of Applied Physics, 107 (2010), S. 113701-1 - 113701-9.

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  450. Autor/innen: Neophytos Neophytou, E360; Gerhard Klimeck; Hans Kosina, E360

    N. Neophytou, G. Klimeck, H. Kosina:
    "Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities";
    Journal of Applied Physics, 109 (2011), S. 053721-1 - 053721-6.

    Zusätzliche Informationen

  451. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation";
    Physical Review B, 84 (2011), S. 085313-1 - 085313-15.

    Zusätzliche Informationen

  452. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors";
    IEEE Electron Device Letters, 33 (2012), 5; S. 652 - 654.

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  453. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands";
    Solid-State Electronics, 70 (2012), S. 81 - 91.

    Zusätzliche Informationen

  454. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires";
    Physical Review B, 83 (2011), S. 245305-1 - 245305-16.

    Zusätzliche Informationen

  455. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Gated Si Nanowires for Large Thermoelectric Power Factors";
    Applied Physics Letters, 105 (2014), 7; S. 073119-1 - 5.

    Zusätzliche Informationen

  456. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement";
    Applied Physics Letters, 99 (2011), S. 092110-1 - 092110-3.

    Zusätzliche Informationen

  457. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis";
    Nano Letters, 10 (2010), S. 4913 - 4919.

    Zusätzliche Informationen

  458. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels";
    Journal of Applied Physics, 112 (2012), 2; S. 024305-1 - 024305-6.

    Zusätzliche Informationen

  459. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires";
    Journal of Computational Electronics (eingeladen), 11 (2012), 1; S. 29 - 44.

    Zusätzliche Informationen

  460. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires";
    Journal of Electronic Materials, 41 (2012), 6; S. 1305 - 1311.

    Zusätzliche Informationen

  461. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Optimizing Thermoelectric Power Factor by Means of a Potential Barrier";
    Journal of Applied Physics, 114 (2013), S. 044315_1 - 044315-6.

    Zusätzliche Informationen

  462. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport";
    Journal of Electronic Materials, 40 (2011), 5; S. 753 - 758.

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  463. Autor/innen: Neophytos Neophytou; Michael Thesberg, E360

    N. Neophytou, M. Thesberg:
    "Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor";
    Journal of Computational Electronics (eingeladen), 15 (2016), 1; S. 16 - 26.

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  464. Autor/innen: Neophytos Neophytou, E360; Martin Wagner, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
    "Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model";
    Journal of Electronic Materials, 39 (2010), 9; S. 1902 - 1908.

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  465. Autor/innen: Neophytos Neophytou, E360; Xanthippe Zianni; Hans Kosina, E360; Stefano Frabboni; Bruno Lorenzi; Dario Narducci

    N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
    "Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems";
    Journal of Electronic Materials, 43 (2013), 6; S. 1896 - 1904.

    Zusätzliche Informationen

  466. Autor/innen: Neophytos Neophytou, E360; Xanthippe Zianni; Hans Kosina, E360; Stefano Frabboni; Bruno Lorenzi; Dario Narducci

    N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
    "Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si";
    Nanotechnology, 24 (2013), 20; S. 205402.

    Zusätzliche Informationen

  467. Autor/innen: M. Noei; Mahdi Moradinasab, E360; M. Fathipour

    M. Noei, M. Moradinasab, M. Fathipour:
    "A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors";
    Physica E: Low-dimensional Systems and Nanostructures, 44 (2012), 7-8; S. 1780 - 1786.

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  468. Autor/innen: H. Noll; Siegfried Selberherr, E360

    H. Noll, S. Selberherr:
    "Zur Entwicklung der Mikroelektronik";
    Telematik, 4 (1998), 1; S. 2 - 6.

  469. Autor/innen: J.O. Nylander; F. Masszi; Siegfried Selberherr, E360; S. Berg

    J.O. Nylander, F. Masszi, S. Selberherr, S. Berg:
    "Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity";
    Solid-State Electronics, 32 (1989), 5; S. 363 - 367.

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  470. Autor/innen: Nicolo Oliva; Yury Illarionov, E360; Emanuele Casu; Matteo Cavalieri; Theresia Knobloch, E360; Tibor Grasser, E360; Adrian Ionescu

    N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu:
    "Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric";
    IEEE Journal of the Electron Devices Society, 7 (2019), S. 1163 - 1169.

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  471. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
    Microelectronics Reliability, 51 (2011), S. 1573 - 1577.

    Zusätzliche Informationen

  472. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Analysis of Electromigration in Dual-Damascene Interconnect Structures";
    Journal Integrated Circuits and Systems, 4 (2009), 2; S. 67 - 72.

    Zusätzliche Informationen

  473. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
    Journal of Computational Electronics, 7 (2008), 3; S. 128 - 131.

    Zusätzliche Informationen

  474. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
    Microelectronics Reliability, 52 (2012), S. 1981 - 1986.

    Zusätzliche Informationen

  475. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
    Microelectronics Reliability (eingeladen), 50 (2010), 6; S. 775 - 789.

    Zusätzliche Informationen

  476. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Gös; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
    "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
    IEEE Journal of the Electron Devices Society, 9 (2021), S. 61 - 67.

    Zusätzliche Informationen

  477. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
    Micromachines, 12 (2021), 4; S. 443.

    Zusätzliche Informationen

  478. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
    Solid-State Electronics (eingeladen), 185 (2021), S. 108075.

    Zusätzliche Informationen

  479. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
    Physica B: Condensed Matter, 578 (2020), S. 411743.

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  480. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
    Solid-State Electronics, 168 (2020), S. 107730-1 - 107730-7.

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  481. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, S. Selberherr, V. Sverdlov:
    "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
    Proceedings of SPIE (eingeladen), 11090 (2019), S. 110903F-1 - 110903F-6.

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  482. Autor/innen: F. Ortmann; S. Roche; J. C. Greer; G. Huhs; T. Shulthess; T. Deutsch; P. Weinberger; M. Payne; J. M. Sellier; J. Sprekels; Josef Weinbub, E360; Karl Rupp, E360; Mihail Nedjalkov, E360; Dragica Vasileska; E. Alfi nito; L. Reggiani; D. Guerra; D.K. Ferry; M. Saraniti; S.M. Goodnick; A. Kloes; L. Colombo; K. Lilja; J. Mateos; T. Gonzalez; E. Velazquez; P Palestri; A. Schenk; M. Macucci

    F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci:
    "Multi-Scale Modelling for Devices and Circuits";
    E-Nano Newsletter, Special Issue April 2012 (2012), 31 S.

  483. Autor/innen: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
    Solid-State Electronics, 90 (2013), S. 34 - 38.

    Zusätzliche Informationen

  484. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
    Sains Malaysiana, 42 (2013), 2; S. 205 - 211.

  485. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
    Advanced Materials Research - Print/CD, 854 (2014), S. 29 - 34.

    Zusätzliche Informationen

  486. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
    Solid-State Electronics, 112 (2015), S. 46 - 50.

    Zusätzliche Informationen

  487. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
    Solid-State Electronics, 71 (2012), S. 25 - 29.

    Zusätzliche Informationen

  488. Autor/innen: C Ostermaier; Peter Willibald Lagger; G. Prechtl; Alexander Grill, E360; Tibor Grasser, E360; Dionyz Pogany, E362

    C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
    "Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs";
    Applied Physics Letters, 110 (2017), 173502; S. 1 - 4.

    Zusätzliche Informationen

  489. Autor/innen: Vassil Palankovski, E360; N. Belova; Tibor Grasser, E360; Helmut Puchner, E360; Sheldon Aronowitz; Siegfried Selberherr, E360

    V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
    "A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
    IEEE Transactions on Electron Devices, 48 (2001), 10; S. 2331 - 2336.

    Zusätzliche Informationen

  490. Autor/innen: Vassil Palankovski, E360; Goran Kaiblinger-Grujin, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
    "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
    Materials Science and Engineering B, 66 (1999), 1-3; S. 46 - 49.

    Zusätzliche Informationen

  491. Autor/innen: Vassil Palankovski, E360; Rüdiger Quay, E360; Siegfried Selberherr, E360

    V. Palankovski, R. Quay, S. Selberherr:
    "Industrial Application of Heterostructure Device Simulation";
    IEEE Journal of Solid-State Circuits (eingeladen), 36 (2001), 9; S. 1365 - 1370.

    Zusätzliche Informationen

  492. Autor/innen: Vassil Palankovski, E360; G. Röhrer; Tibor Grasser, E360; Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
    "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
    Applied Surface Science, 224 (2004), 1-4; S. 361 - 364.

    Zusätzliche Informationen

  493. Autor/innen: Vassil Palankovski, E360; R. Schultheis; A. Bonacina; Siegfried Selberherr, E360

    V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
    "Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
    Radiation Effects and Defects in Solids, 156 (2001), 1-4; S. 261 - 265.

    Zusätzliche Informationen

  494. Autor/innen: Vassil Palankovski, E360; R. Schultheis; Siegfried Selberherr, E360

    V. Palankovski, R. Schultheis, S. Selberherr:
    "Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
    IEEE Transactions on Electron Devices, 48 (2001), 6; S. 1264 - 1269.

    Zusätzliche Informationen

  495. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Critical Modeling Issues of SiGe Semiconductor Devices";
    Journal of Telecommunications and Information Technology (eingeladen), 4 (2004), 1; S. 15 - 25.

    Zusätzliche Informationen

  496. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Micro Materials Modeling in MINIMOS-NT";
    Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7 (2001), 4; S. 183 - 187.

    Zusätzliche Informationen

  497. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Rigorous Modeling of High-Speed Semiconductor Devices";
    Microelectronics Reliability (eingeladen), 44 (2004), 6; S. 889 - 897.

    Zusätzliche Informationen

  498. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
    Applied Surface Science, 224 (2004), 1-4; S. 312 - 319.

    Zusätzliche Informationen

  499. Autor/innen: Vassil Palankovski, E360; Sergey Vainshtein; Valentin Yuferev; Juha Kostamovaara; Vladimir Egorkin

    V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin:
    "Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs";
    Applied Physics Letters, 106 (2015), 18; S. 183505-1 - 183505-5.

    Zusätzliche Informationen

  500. Autor/innen: P Palestri; N Barin; D Brunel; C Busseret; A Campera; P Childs; F Driussi; C. Fiegna; G Fiori; R Gusmeroli; G Iannaccone; Markus Karner, E360; Hans Kosina, E360; Erasmus Langer, E360; C Majkusiak; C Monzio Compagnoni; A Poncet; E. Sangiorgi; L Selmi; A Spinelli; J Walczak

    P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak:
    "Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks";
    IEEE Transactions on Electron Devices, 54 (2007), 1; S. 106 - 114.

    Zusätzliche Informationen

  501. Autor/innen: Santo Papaleo, E360; Wolfhard Zisser, E360; Anderson P. Singulani; Hajdin Ceric, E360; Siegfried Selberherr, E360

    S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
    "Stress Evolution During Nanoindentation in Open TSVs";
    IEEE Transactions on Device and Materials Reliability, 16 (2016), 4; S. 470 - 474.

    Zusätzliche Informationen

  502. Autor/innen: Jong Mun Park, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
    "A Numerical Study of Partial-SOI LDMOSFETs";
    Solid-State Electronics, 47 (2003), 2; S. 275 - 281.

    Zusätzliche Informationen

  503. Autor/innen: Jong Mun Park, E360; Robert Klima, E360; Siegfried Selberherr, E360

    J.M. Park, R. Klima, S. Selberherr:
    "High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
    Microelectronics Journal, 35 (2004), 3; S. 299 - 304.

    Zusätzliche Informationen

  504. Autor/innen: Jong Mun Park, E360; Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
    "New SOI Lateral Power Devices with Trench Oxide";
    Solid-State Electronics, 48 (2004), 6; S. 1007 - 1015.

    Zusätzliche Informationen

  505. Autor/innen: Christoph Pichler, E360; Richard Plasun, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
    "High-Level TCAD Task Representation and Automation";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 5; S. 1 - 30.

    Zusätzliche Informationen

  506. Autor/innen: Christoph Pichler, E360; Richard Plasun, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
    "Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools";
    IEEE Transactions on Semiconductor Manufacturing, 12 (1999), 1; S. 76 - 86.

    Zusätzliche Informationen

  507. Autor/innen: P. Pichler, E366; Werner Jüngling, E360; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC-Fabrication Steps";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4 (1985), 4; S. 384 - 397.

    Zusätzliche Informationen

  508. Autor/innen: P. Pichler, E366; Werner Jüngling, E360; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC-Fabrication Steps";
    IEEE Transactions on Electron Devices, 32 (1985), 10; S. 1940 - 1953.

    Zusätzliche Informationen

  509. Autor/innen: P. Pichler, E366; Werner Jüngling, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
    "Two-Dimensional Coupled Diffusion Modeling";
    Physica B: Condensed Matter, 129 (1985), 1-3; S. 187 - 191.

    Zusätzliche Informationen

  510. Autor/innen: Richard Plasun, E360; Michael Stockinger, E360; Siegfried Selberherr, E360

    R. Plasun, M. Stockinger, S. Selberherr:
    "Integrated Optimization Capabilities in the VISTA Technology CAD Framework";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; S. 1244 - 1251.

    Zusätzliche Informationen

  511. Autor/innen: G. Pobegen; T. Aichinger; Tibor Grasser, E360; M. Nelhiebel

    G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
    "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
    Microelectronics Reliability, 51 (2011), S. 1530 - 1534.

    Zusätzliche Informationen

  512. Autor/innen: Gregor Pobegen; T. Aichinger; Alberto Salinaro; Tibor Grasser, E360

    G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
    "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
    Materials Science Forum, 778-780 (2014), S. 959 - 962.

    Zusätzliche Informationen

  513. Autor/innen: Gregor Pobegen; Tibor Grasser, E360

    G. Pobegen, T. Grasser:
    "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
    Materials Science Forum, 740-742 (2013), S. 757 - 760.

    Zusätzliche Informationen

  514. Autor/innen: Gregor Pobegen; Tibor Grasser, E360

    G. Pobegen, T. Grasser:
    "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
    IEEE Transactions on Electron Devices, 60 (2013), 7; S. 2148 - 2155.

    Zusätzliche Informationen

  515. Autor/innen: Gregor Pobegen; Michael Nelhiebel; Stefano de Filippis; Tibor Grasser, E360

    G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
    "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
    IEEE Transactions on Device and Materials Reliability, 99 (2013), PP; S. 1 - 8.

    Zusätzliche Informationen

  516. Autor/innen: Gregor Pobegen; S. E. Tyaginov, E360; Michael Nelhiebel; Tibor Grasser, E360

    G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
    "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
    IEEE Electron Device Letters, 34 (2013), 8; S. 939 - 941.

    Zusätzliche Informationen

  517. Autor/innen: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads";
    IEEE Transactions on Electromagnetic Compatibility, 51 (2009), 1; S. 18 - 24.

    Zusätzliche Informationen

  518. Autor/innen: Mahdi Pourfath, E360; Andreas Gehring, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Byoung-Ho Cheong; Wanjun Park

    M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park:
    "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors";
    Journal of Applied Physics, 97 (2005), 10; S. 106103-1 - 106103-3.

    Zusätzliche Informationen

  519. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Computational Study of Carbon-Based Electronics";
    Journal of Computational Electronics, 8 (2009), 3-4; S. 427 - 440.

    Zusätzliche Informationen

  520. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets";
    Journal of Computational and Theoretical Nanoscience, 5 (2008), 6; S. 1128 - 1137.

    Zusätzliche Informationen

  521. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors";
    Nanotechnology, 18 (2007), 42; S. 424036 - 424041.

    Zusätzliche Informationen

  522. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
    Journal of Computational Electronics, 5 (2006), 2-3; S. 155 - 159.

    Zusätzliche Informationen

  523. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Dissipative Transport in CNTFETs";
    Journal of Computational Electronics, 6 (2007), 1-3; S. 321 - 324.

    Zusätzliche Informationen

  524. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Geometry Optimization for Carbon Nanotube Transistors";
    Solid-State Electronics, 51 (2007), 11-12; S. 1565 - 1571.

    Zusätzliche Informationen

  525. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Numerical Study of Quantum Transport in Carbon Nanotube Transistors";
    Mathematics and Computers in Simulation, 79 (2008), 4; S. 1051 - 1059.

    Zusätzliche Informationen

  526. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Rigorous Modeling of Carbon Nanotube Transistors";
    Journal of Physics: Conference Series, 38 (2006), S. 29 - 32.

    Zusätzliche Informationen

  527. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
    Journal of Physics: Conference Series, 109 (2008), 012029; S. 1 - 5.

    Zusätzliche Informationen

  528. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Tunneling CNTFETs";
    Journal of Computational Electronics, 6 (2007), 1-3; S. 243 - 246.

    Zusätzliche Informationen

  529. Autor/innen: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Byoung-Ho Cheong; W Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
    "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Microelectronic Engineering, 81 (2005), 2-4; S. 428 - 433.

    Zusätzliche Informationen

  530. Autor/innen: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360; W Park; Byoung-Ho Cheong

    M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong:
    "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Journal of Computational Electronics, 4 (2005), 1-2; S. 75 - 78.

    Zusätzliche Informationen

  531. Autor/innen: Helmut Puchner, E360; R. Castagnetti; Wolfgang Pyka, E360

    H. Puchner, R. Castagnetti, W. Pyka:
    "Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions";
    Microelectronic Engineering, 53 (2000), S. 429 - 432.

  532. Autor/innen: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "An Advanced Model for Dopant Diffusion in Polysilicon";
    IEEE Transactions on Electron Devices, 42 (1995), 10; S. 1750 - 1755.

    Zusätzliche Informationen

  533. Autor/innen: Katja Puschkarsky; Tibor Grasser, E360; T. Aichinger; W. Gustin; H. Reisinger

    K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
    "Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
    IEEE Transactions on Electron Devices (eingeladen), 66 (2019), 11; S. 4604 - 4616.

    Zusätzliche Informationen

  534. Autor/innen: Katja Puschkarsky; H. Reisinger; T. Aichinger; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
    "Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation";
    IEEE Transactions on Device and Materials Reliability, 18 (2018), 2; S. 144 - 153.

    Zusätzliche Informationen

  535. Autor/innen: Katja Puschkarsky; H. Reisinger; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser:
    "Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation";
    IEEE Transactions on Electron Devices, 65 (2018), 11; S. 4764 - 4771.

    Zusätzliche Informationen

  536. Autor/innen: Katja Puschkarsky; H. Reisinger; Gunnar Andreas Rott; C Schluender; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser:
    "An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps";
    IEEE Transactions on Electron Devices, 66 (2019), 11; S. 4623 - 4630.

    Zusätzliche Informationen

  537. Autor/innen: Wolfgang Pyka, E360; Peter Fleischmann, E360; Bernhard Haindl, E384; Siegfried Selberherr, E360

    W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
    "Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18 (1999), 12; S. 1741 - 1749.

    Zusätzliche Informationen

  538. Autor/innen: Wolfgang Pyka, E360; Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    W. Pyka, H. Kirchauer, S. Selberherr:
    "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
    Microelectronic Engineering, 53 (2000), 1-4; S. 449 - 452.

    Zusätzliche Informationen

  539. Autor/innen: Wolfgang Pyka, E360; Rui Martins, E360; Siegfried Selberherr, E360

    W. Pyka, R. Martins, S. Selberherr:
    "Optimized Algorithms for Three-Dimensional Cellular Topography Simulation";
    IEEE Journal of Technology Computer Aided Design, 1 (2000), 20; S. 1 - 36.

    Zusätzliche Informationen

  540. Autor/innen: Rüdiger Quay, E360; K. Hess; R. Reuter; M. Schlechtweg; T. Grave; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
    "Nonlinear Electronic Transport and Device Performance of HEMTs";
    IEEE Transactions on Electron Devices, 48 (2001), 2; S. 210 - 217.

    Zusätzliche Informationen

  541. Autor/innen: Rüdiger Quay, E360; C. Moglestue; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
    "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
    Materials Science in Semiconductor Processing, 3 (2000), 1-2; S. 149 - 155.

    Zusätzliche Informationen

  542. Autor/innen: Michael Quell, E360; Georgios Diamantopoulos, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
    "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
    Journal of Computational and Applied Mathematics, 392 (2021), S. 113488-1 - 113488-15.

    Zusätzliche Informationen

  543. Autor/innen: Michael Quell, E360; V Suvorov; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    M. Quell, V. Suvorov, A. Hössinger, J. Weinbub:
    "Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD";
    IEEE Transactions on Electron Devices, 68 (2021), 11; S. 5430 - 5437.

    Zusätzliche Informationen

  544. Autor/innen: H. Rabiee Golgir; R. Faez; M. Pazoki; Hossein Karamitaheri, E360; R. Sarvari

    H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari:
    "Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity";
    Journal of Applied Physics, 110 (2011), 6; S. 064320-1 - 064320-6.

    Zusätzliche Informationen

  545. Autor/innen: Mustafa Radi, E360; Ernst Leitner, E360; Siegfried Selberherr, E360

    M. Radi, E. Leitner, S. Selberherr:
    "AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
    IEEE Journal of Technology Computer Aided Design, 1 (1999), 17; S. 1 - 72.

    Zusätzliche Informationen

  546. Autor/innen: K. Raleva; Dragica Vasileska; S.M. Goodnick; Mihail Nedjalkov, E360

    K. Raleva, D. Vasileska, S.M. Goodnick, M. Nedjalkov:
    "Modeling Thermal Effects in Nanodevices";
    IEEE Transactions on Electron Devices, 55 (2008), 6; S. 1306 - 1316.

  547. Autor/innen: Gopal Raut; Ambika Shah, E360; Vishal Sharma; Gunjan Rajput; Santosh Kumar Vishvakarma

    G. Raut, A. Shah, V. Sharma, G. Rajput, S. Vishvakarma:
    "A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture";
    Circuits Systems and Signal Processing, 39 (2020), S. 4681 - 4694.

    Zusätzliche Informationen

  548. Autor/innen: Manfred Reiche; M Kittler; E Pippel; Hans Kosina, E360; Alois Lugstein, E362; H Uebensee

    M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee:
    "Electronic Properties of Dislocations";
    Solid State Phenomena, 242 (2016), S. 141 - 146.

    Zusätzliche Informationen

  549. Autor/innen: Manfred Reiche; M Kittler; E Pippel; H Uebensee; Hans Kosina, E360; Alexander Grill, E360; Zlatan Stanojevic; Oskar Baumgartner

    M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner:
    "Impact of Defect-Induced Strain on Device Properties";
    Advanced Engineering Materials, 18 (2016), 12; S. 1 - 4.

    Zusätzliche Informationen

  550. Autor/innen: Peter Reininger, E362; Benedikt Schwarz, E362; Hermann Detz, E362; Donald MacFarland, E362; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "Diagonal-Transition Quantum Cascade Detector";
    Applied Physics Letters, 105 (2014), 091108; S. 1 - 4.

    Zusätzliche Informationen

  551. Autor/innen: H. Reisinger; R. P. Vollertsen; Paul-Jürgen Wagner, E360; T. Huttner; A. Martin; S. Aresu; W. Gustin; Tibor Grasser, E360; C. Schlünder

    H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
    "A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides";
    IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; S. 106 - 114.

    Zusätzliche Informationen

  552. Autor/innen: Tobias Reiter, E360; Xaver Klemenschits, E360; Lado Filipovic, E360

    T. Reiter, X. Klemenschits, L. Filipovic:
    "Impact of Plasma Induced Damage on the Fabrication of 3D NAND Flash Memory";
    Solid-State Electronics (eingeladen), 192 (2022), S. 108261-1 - 108261-9.

    Zusätzliche Informationen

  553. Autor/innen: Gerald Rescher; Gregor Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
    Materials Science Forum, 924 (2018), S. 671 - 675.

    Zusätzliche Informationen

  554. Autor/innen: Gerald Rescher; Gregor Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
    Materials Science Forum, 897 (2017), S. 143 - 146.

    Zusätzliche Informationen

  555. Autor/innen: Gerald Rescher; Gregor Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique";
    IEEE Transactions on Electron Devices, 25 (2018), 4; S. 1419 - 1426.

    Zusätzliche Informationen

  556. Autor/innen: Gerald Rescher; Gregor Pobegen; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Grasser:
    "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
    Materials Science Forum, 858 (2016), S. 481 - 484.

    Zusätzliche Informationen

  557. Autor/innen: Ch. Ringhofer; Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
    "Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
    SIAM Journal on Applied Mathematics, 64 (2004), 6; S. 1933 - 1953.

    Zusätzliche Informationen

  558. Autor/innen: Ch. Ringhofer; Siegfried Selberherr, E360

    Ch. Ringhofer, S. Selberherr:
    "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
    MRC Technical Summary Report, 2513 (1983), S. 1 - 49.

  559. Autor/innen: Rodrigo Rodriguez-Torres, E360; Edmundo Gutierrez; Robert Klima, E360; Siegfried Selberherr, E360

    R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
    "Analysis of Split-Drain MAGFETs";
    IEEE Transactions on Electron Devices, 51 (2004), 12; S. 2237 - 2245.

    Zusätzliche Informationen

  560. Autor/innen: Gunnar Andreas Rott; K. Rott; H. Reisinger; W. Gustin; Tibor Grasser, E360

    G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
    "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
    Microelectronics Reliability, 54 (2014), 9-10; S. 2310 - 2314.

    Zusätzliche Informationen

  561. Autor/innen: K. Rott; H. Reisinger; S. Aresu; C. Schlünder; K. Kölpin; W. Gustin; Tibor Grasser, E360

    K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser:
    "New Insights on the PBTI Phenomena in SiON pMOSFETs";
    Microelectronics Reliability, 52 (2012), 9-10; S. 1891 - 1894.

    Zusätzliche Informationen

  562. Autor/innen: Bernhard Ruch; Markus Jech, E360; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, M. Jech, G. Pobegen, T. Grasser:
    "Applicability of Shockley-Read-Hall Theory for Interface States";
    IEEE Transactions on Electron Devices, 68 (2021), 4; S. 2092 - 2097.

    Zusätzliche Informationen

  563. Autor/innen: Bernhard Ruch; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, G. Pobegen, T. Grasser:
    "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping";
    IEEE Transactions on Electron Devices, 67 (2020), 10; S. 4092 - 4098.

    Zusätzliche Informationen

  564. Autor/innen: Bernhard Ruch; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, G. Pobegen, T. Grasser:
    "Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs";
    IEEE Transactions on Electron Devices, 68 (2021), 4; S. 1804 - 1809.

    Zusätzliche Informationen

  565. Autor/innen: Florian Rudolf, E360; Karl Rupp, E360; Josef Weinbub, E360; Andreas Morhammer, E360; Siegfried Selberherr, E360

    F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr:
    "Transformation Invariant Local Element Size Specification";
    Applied Mathematics and Computation, 267 (2015), S. 195 - 206.

    Zusätzliche Informationen

  566. Autor/innen: Florian Rudolf, E360; Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr:
    "The Meshing Framework ViennaMesh for Finite Element Applications";
    Journal of Computational and Applied Mathematics, 270 (2014), S. 166 - 177.

    Zusätzliche Informationen

  567. Autor/in: Karl Rupp, E360

    K. Rupp:
    "High-Level Manipulation of OpenCL-Based Subvectors and Submatrices";
    Procedia Computer Science, 9 (2012), S. 1857 - 1866.

    Zusätzliche Informationen

  568. Autor/innen: Karl Rupp, E360; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, A. Jüngel, T. Grasser:
    "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
    Journal of Computational Physics, 229 (2010), S. 8750 - 8765.

    Zusätzliche Informationen

  569. Autor/innen: Karl Rupp, E360; C. Jungemann; Sung-Min Hong; Markus Bina; Tibor Grasser, E360; Ansgar Jüngel, E101-01

    K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
    "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
    Journal of Computational Electronics, 15 (2016), 3; S. 939 - 958.

    Zusätzliche Informationen

  570. Autor/innen: Karl Rupp, E360; Siegfried Selberherr, E360

    K. Rupp, S. Selberherr:
    "The Economic Limit to Moore's Law";
    IEEE Transactions on Semiconductor Manufacturing, 24 (2011), 1; S. 1 - 4.

    Zusätzliche Informationen

  571. Autor/innen: Karl Rupp; Siegfried Selberherr, E360

    K. Rupp, S. Selberherr:
    "The Economic Limit to Moore´s Law";
    Proceedings of the IEEE, 98 (2010), 3; S. 351 - 353.

    Zusätzliche Informationen

  572. Autor/innen: Karl Rupp, E360; Philippe Tillet; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
    "Achieving Portable High Performance for Iterative Solvers on Accelerators";
    Proceedings in Applied Mathematics and Mechanics, 14 (2014), 1; S. 963 - 964.

    Zusätzliche Informationen

  573. Autor/innen: Karl Rupp, E360; Philippe Tillet; Florian Rudolf, E360; Josef Weinbub, E360; Andreas Morhammer, E360; Tibor Grasser, E360; Ansgar Jüngel, E101-01; Siegfried Selberherr, E360

    K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
    "ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
    SIAM Journal on Scientific Computing, 38 (2016), 5; S. S412 - S439.

    Zusätzliche Informationen

  574. Autor/innen: Karl Rupp, E360; Josef Weinbub, E360; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
    "Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
    ACM Transactions on Mathematical Software, 43 (2016), 2; S. 11:1 - 11:27.

    Zusätzliche Informationen

  575. Autor/innen: J. T. Ryan; P. M. Lenahan; Tibor Grasser, E360; H. Enichlmair

    J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
    "Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance";
    Applied Physics Letters, 96 (2010), 22; S. 223509-1 - 223509-3.

    Zusätzliche Informationen

  576. Autor/innen: Gerhard Rzepa, E360; J. Franco; Barry J. O´Sullivan; A Subirats; Marko Simicic; Geert Hellings; P. Weckx; Markus Jech, E360; Theresia Knobloch, E360; Michael Waltl, E360; Philippe J. Roussel; D Linten; Ben Kaczer; Tibor Grasser, E360

    G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
    "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
    Microelectronics Reliability (eingeladen), 85 (2018), 1; S. 49 - 65.

    Zusätzliche Informationen

  577. Autor/innen: Rainer Sabelka, E360; Siegfried Selberherr, E360

    R. Sabelka, S. Selberherr:
    "A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures";
    Microelectronics Journal, 32 (2001), 2; S. 163 - 171.

    Zusätzliche Informationen

  578. Autor/innen: Toufik Sadi; Christina Medina-Bailon; Mihail Nedjalkov, E360; Jaehyun Lee; Oves Badami; Salim Berrada; Hamilton Carillo-Nunez; Vihar Georgiev; Siegfried Selberherr, E360; Asen Asenov

    T. Sadi, C. Medina-Bailon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
    "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors";
    Materials, 12 (2019), 1; S. 124-1 - 124-11.

    Zusätzliche Informationen

  579. Autor/innen: Fatemeh Safari; Mahdi Moradinasab; M. Fathipour; Hans Kosina, E360

    F. Safari, M. Moradinasab, M. Fathipour, H. Kosina:
    "Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study";
    Applied Surface Science, 464 (2019), S. 153 - 161.

    Zusätzliche Informationen

  580. Autor/innen: Ahmed Saleh; Hajdin Ceric, E360; Houman Zahedmanesh

    A. Saleh, H. Ceric, H. Zahedmanesh:
    "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model";
    Journal of Applied Physics, 129 (2021), 12; S. 125102-1 - 125102-17.

    Zusätzliche Informationen

  581. Autor/innen: Prachi Sanvale; Neha Gupta; Vaibhav Neema; Ambika Shah, E360; Santosh Kumar Vishvakarma

    P. Sanvale, N. Gupta, V. Neema, A. Shah, S. Vishvakarma:
    "An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ";
    Microelectronics Journal, 92 (2019), S. 104611.

    Zusätzliche Informationen

  582. Autor/innen: Franz Schanovsky, E360; Oskar Baumgartner, E360; Viktor Sverdlov, E360; Tibor Grasser, E360

    F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
    "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
    Journal of Computational Electronics, 11 (2012), 3; S. 218 - 224.

    Zusätzliche Informationen

  583. Autor/innen: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT";
    Journal of Computational Electronics (eingeladen), 9 (2010), 3-4; S. 135 - 140.

    Zusätzliche Informationen

  584. Autor/innen: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "Multiphonon Hole Trapping from First Principles";
    Journal of Vacuum Science & Technology B, 29 (2011), 1; S. 01A201-1 - 01A201-5.

    Zusätzliche Informationen

  585. Autor/innen: Christian Schleich, E360; Dominic Waldhör, E360; Katja Anna Waschneck; Maximilian Feil; H. Reisinger; Tibor Grasser, E360; Michael Waltl, E360

    C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
    "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
    IEEE Transactions on Electron Devices, 68 (2021), 8; S. 4016 - 4021.

    Zusätzliche Informationen

  586. Autor/innen: Gerhard Schrom, E360; De Vivek; Siegfried Selberherr, E360

    G. Schrom, De Vivek, S. Selberherr:
    "VLSI Performance Metric Based on Minimum TCAD Simulations";
    IEEE Journal of Technology Computer Aided Design, 1 (1998), 12; S. 1 - 29.

    Zusätzliche Informationen

  587. Autor/innen: Gerhard Schrom, E360; Christoph Pichler, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    G. Schrom, C. Pichler, T. Simlinger, S. Selberherr:
    "On the Lower Bounds of CMOS Supply Voltage";
    Solid-State Electronics, 39 (1996), 4; S. 425 - 430.

    Zusätzliche Informationen

  588. Autor/innen: Gerhard Schrom, E360; Andreas Stach, E360; Siegfried Selberherr, E360

    G. Schrom, A. Stach, S. Selberherr:
    "An Interpolation Based MOSFET Model for Low-Voltage Applications";
    Microelectronics Journal, 29 (1998), 8; S. 529 - 534.

    Zusätzliche Informationen

  589. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "A Two-Dimensional Model of the Avalanche Effect in MOS Transistors";
    Solid-State Electronics, 25 (1982), 3; S. 177 - 183.

    Zusätzliche Informationen

  590. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Analysis of Breakdown Phenomena in MOSFET's";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1 (1982), 2; S. 77 - 85.

    Zusätzliche Informationen

  591. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Modeling MOS-Transistors in the Avalanche Breakdown Regime";
    Transactions on Computer Simulation (eingeladen), 1 (1984), 1; S. 1 - 14.

  592. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Temperature Distribution and Power Dissipation in MOSFETs";
    Solid-State Electronics, 27 (1984), 4; S. 394 - 395.

    Zusätzliche Informationen

  593. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
    "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
    International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; S. 539 - 549.

    Zusätzliche Informationen

  594. Autor/innen: P. Schwaha; D. Querlioz; P. Dollfus; J. Saint-Martin; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr:
    "Decoherence Effects in the Wigner Function Formalism";
    Journal of Computational Electronics, 12 (2013), 3; S. 388 - 396.

    Zusätzliche Informationen

  595. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Hermann Detz, E362; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Stefan Kalchmair, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "A bi-functional quantum cascade device for same-frequency lasing and detection";
    Applied Physics Letters, 101 (2012), S. 1911091 - 1911094.

    Zusätzliche Informationen

  596. Autor/innen: Nima Sefidmooye Azar; Mahdi Pourfath, E360

    N. Sefidmooye Azar, M. Pourfath:
    "A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites";
    IEEE Transactions on Electron Devices, 62 (2015), 5; S. 1584 - 1589.

    Zusätzliche Informationen

  597. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Computer für Wissenschaft und Forschung";
    Österreichische Hochschulzeitung (eingeladen), 5 (1988), S. 9 - 10.

  598. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik";
    Österreichische Hochschulzeitung (eingeladen), 7 (1988), S. 25.

  599. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Device Modeling and Physics";
    Physica Scripta (eingeladen), T35 (1991), S. 293 - 298.

    Zusätzliche Informationen

  600. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren";
    E&I Elektrotechnik und Informationstechnik (eingeladen), 115 (1998), 7/8; S. 344 - 348.

    Zusätzliche Informationen

  601. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "MOS Device Modeling at 77K";
    IEEE Transactions on Electron Devices, 36 (1989), 8; S. 1464 - 1474.

    Zusätzliche Informationen

  602. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process and Device Modeling for VLSI";
    Microelectronics Reliability (eingeladen), 24 (1984), 2; S. 225 - 257.

    Zusätzliche Informationen

  603. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process and Device Modeling for VLSI";
    Microelectronics Journal, 16 (1985), 6; S. 56 - 57.

    Zusätzliche Informationen

  604. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process Modeling";
    Microelectronic Engineering, 9 (1989), 1-4; S. 605 - 610.

    Zusätzliche Informationen

  605. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Technology Computer-Aided Design";
    South African Journal of Physics (eingeladen), 16 (1993), 1/2; S. 1 - 5.

  606. Autor/innen: Siegfried Selberherr, E360; E. Guerrero

    S. Selberherr, E. Guerrero:
    "Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals";
    Solid-State Electronics, 24 (1981), 6; S. 591 - 593.

    Zusätzliche Informationen

  607. Autor/innen: Siegfried Selberherr, E360; W. Hänsch; M. Seavey; Jan Slotboom

    S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
    "The Evolution of the MINIMOS Mobility Model";
    Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; S. 161 - 172.

  608. Autor/innen: Siegfried Selberherr, E360; W. Hänsch; M. Seavey; Jan Slotboom

    S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
    "The Evolution of the MINIMOS Mobility Model";
    Solid-State Electronics, 33 (1990), 11; S. 1425 - 1436.

    Zusätzliche Informationen

  609. Autor/innen: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Three Dimensional Process and Device Modeling";
    Microelectronics Journal (eingeladen), 20 (1989), 1-2; S. 113 - 127.

    Zusätzliche Informationen

  610. Autor/innen: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Three Dimensional Process and Device Modeling";
    Microelectronics Reliability, 30 (1990), 3; S. 624.

    Zusätzliche Informationen

  611. Autor/innen: Siegfried Selberherr, E360; Ch. Ringhofer

    S. Selberherr, Ch. Ringhofer:
    "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3 (1984), 1; S. 52 - 64.

    Zusätzliche Informationen

  612. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Investigation of Parameter Sensitivity of Short Channel MOSFETs";
    Solid-State Electronics, 25 (1982), 2; S. 85 - 90.

    Zusätzliche Informationen

  613. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
    IEEE Transactions on Electron Devices, 27 (1980), 8; S. 1540 - 1550.

    Zusätzliche Informationen

  614. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
    IEEE Journal of Solid-State Circuits, 15 (1980), 4; S. 605 - 615.

    Zusätzliche Informationen

  615. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)";
    Elektronikschau, 9 (1980), S. 18 - 23.

  616. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)";
    Elektronikschau, 10 (1980), S. 54 - 58.

  617. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Two-Dimensional MOS Transistor Modelling";
    European Electronics (eingeladen), 1 (1981), 3; S. 20 - 30.

  618. Autor/innen: Siegfried Selberherr, E360; Martin Stiftinger, E360; Otto Heinreichsberger, E360; K. Traar

    S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar:
    "On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers";
    Computer Physics Communications, 67 (1991), 1; S. 145 - 156.

    Zusätzliche Informationen

  619. Autor/innen: Siegfried Selberherr, E360; Viktor Sverdlov, E360

    S. Selberherr, V. Sverdlov:
    "About electron transport and spin control in semiconductor devices";
    Solid-State Electronics (eingeladen), 197 (2022), 108443.

    Zusätzliche Informationen

  620. Autor/innen: J. M. Sellier; S. M. Amoroso; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; A Asenov; Ivan Dimov

    J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov:
    "Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches";
    Physica A: Statistical Mechanics and its Applications, 398 (2014), S. 194 - 198.

    Zusätzliche Informationen

  621. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov

    J. M. Sellier, M. Nedjalkov, I. Dimov:
    "An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism";
    Physics Reports, 577 (2015), S. 1 - 34.

    Zusätzliche Informationen

  622. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "A Benchmark Study of the Wigner Monte Carlo Method";
    Monte Carlo Methods and Applications, 20 (2014), 1; S. 43 - 51.

    Zusätzliche Informationen

  623. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "A Comparison of Approaches for the Solution of the Wigner Equation";
    Mathematics and Computers in Simulation, 107 (2015), S. 108 - 119.

    Zusätzliche Informationen

  624. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "Decoherence and Time Reversibility: The Role of Randomness at Interfaces";
    Journal of Applied Physics, 114 (2013), 17; S. 174902-1 - 174902-7.

    Zusätzliche Informationen

  625. Autor/innen: Ambika Shah; Neha Gupta; Michael Waltl, E360

    A. Shah, N. Gupta, M. Waltl:
    "High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs";
    Analog Integrated Circuits and Signal Processing, 109 (2021), S. 657 - 671.

    Zusätzliche Informationen

  626. Autor/innen: Ambika Shah, E360; Daniele Rossi; Vishal Sharma; Santosh Kumar Vishvakarma; Michael Waltl, E360

    A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl:
    "Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit";
    Microelectronics Reliability, 107 (2020), S. 113617.

    Zusätzliche Informationen

  627. Autor/innen: Ambika Shah, E360; Michael Waltl, E360

    A. Shah, M. Waltl:
    "Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM";
    Electronics, 9 (2020), 2; S. 256-1 - 256-12.

    Zusätzliche Informationen

  628. Autor/innen: Ambika Shah, E360; Michael Waltl, E360

    A. Shah, M. Waltl:
    "Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits";
    International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34 (2021), 3; S. e2854-1 - e2854-13.

    Zusätzliche Informationen

  629. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Markus Jech, E360; Yannick Wimmer, E360; Florian Rudolf, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
    Solid-State Electronics, 115 (2016), Part B; S. 185 - 191.

    Zusätzliche Informationen

  630. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Stewart E. Rauch; J. Franco; Alexander Makarov, E360; M. I. Vexler; Ben Kaczer; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser:
    "Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach";
    IEEE Electron Device Letters, 38 (2017), 2; S. 160 - 163.

    Zusätzliche Informationen

  631. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; Karl Rupp, E360; Markus Bina, E360; H. Enichlmair; J.M. Park; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
    "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
    IEEE Transactions on Electron Devices, 62 (2015), 6; S. 1811 - 1818.

    Zusätzliche Informationen

  632. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; Karl Rupp, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
    Microelectronics Reliability, 55 (2015), 9-10; S. 1427 - 1432.

    Zusätzliche Informationen

  633. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Helmut Puchner, E360; Fuad Badrieh; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr:
    "Simulation of Void Formation in Interconnect Lines";
    Proceedings of SPIE, 5117 (2003), S. 445 - 452.

    Zusätzliche Informationen

  634. Autor/innen: Alireza Sheikholeslami, E360; Farnaz Parhami; H Puchner; Siegfried Selberherr, E360

    A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
    "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
    Journal of Physics: Conference Series, 61 (2007), S. 1051 - 1055.

    Zusätzliche Informationen

  635. Autor/innen: Thomas Simlinger, E360; Helmut Brech; T. Grave; Siegfried Selberherr, E360

    T. Simlinger, H. Brech, T. Grave, S. Selberherr:
    "Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
    IEEE Transactions on Electron Devices, 44 (1997), 5; S. 700 - 707.

    Zusätzliche Informationen

  636. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide";
    IEEE Transactions on Electron Devices, 65 (2018), 2; S. 674 - 679.

    Zusätzliche Informationen

  637. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
    Journal of Applied Physics, 120 (2016), 13; S. 135705-1 - 135705-8.

    Zusätzliche Informationen

  638. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
    Materials Science Forum, 924 (2018), S. 192 - 195.

    Zusätzliche Informationen

  639. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation";
    Journal of Physical Chemistry A, 121 (2017), 46; S. 8791 - 8798.

    Zusätzliche Informationen

  640. Autor/innen: Vito Simonka, E360; Georg Nawratil, E104-03; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
    "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
    Solid-State Electronics (eingeladen), 128 (2017), 2; S. 135 - 140.

    Zusätzliche Informationen

  641. Autor/innen: Vito Simonka, E360; Alexander Toifl, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
    "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
    Journal of Applied Physics, 123 (2018), 23; S. 235701-1 - 235701-7.

    Zusätzliche Informationen

  642. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    A. P. Singulani, H. Ceric, S. Selberherr:
    "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
    Microelectronics Reliability, 53 (2013), S. 1602 - 1605.

    Zusätzliche Informationen

  643. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360

    S. Smirnov, H. Kosina:
    "Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates";
    Solid-State Electronics (eingeladen), 48 (2004), S. 1325 - 1335.

    Zusätzliche Informationen

  644. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
    "Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
    Journal of Applied Physics, 94 (2003), 9; S. 5791 - 5799.

    Zusätzliche Informationen

  645. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, S. Selberherr:
    "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
    IEICE Transactions on Electronics, E86-C (2003), 3; S. 350 - 356.

  646. Autor/innen: Sina Soleimani Kahnoj; S. B. Touski; Mahdi Pourfath, E360

    S. Soleimani Kahnoj, S. Touski, M. Pourfath:
    "The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons";
    Applied Physics Letters, 105 (2014), 10; S. 1035021 - 1035024.

    Zusätzliche Informationen

  647. Autor/innen: Xiaoxue Song; Fei Hui; Theresia Knobloch, E360; Bingru Wang; Zhongchao Fan; Tibor Grasser, E360; Xu Jing; Yuanyuan Shi; Mario Lanza

    X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza:
    "Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide";
    Applied Physics Letters, 111 (2017), 8; S. 083107-1 - 083107-4.

    Zusätzliche Informationen

  648. Autor/innen: Gerhard Span; Martin Wagner, E360; Tibor Grasser, E360; Lennart Holmgren

    G. Span, M. Wagner, T. Grasser, L. Holmgren:
    "Miniaturized TEG with Thermal Generation of Free Carriers";
    Physica Status Solidi - Rapid Research Letters, 1 (2007), 6; S. 241 - 243.

    Zusätzliche Informationen

  649. Autor/innen: Michael Spevak, E360; Tibor Grasser, E360

    M. Spevak, T. Grasser:
    "Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26 (2007), 8; S. 1408 - 1416.

  650. Autor/innen: Bernhard Stampfer, E360; F. Schanovski; Tibor Grasser, E360; Michael Waltl, E360

    B. Stampfer, F. Schanovski, T. Grasser, M. Waltl:
    "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors";
    Micromachines (eingeladen), 11 (2020), 4; S. 446-1 - 446-11.

    Zusätzliche Informationen

  651. Autor/innen: Bernhard Stampfer, E360; Marko Simicic; P. Weckx; Arash Abbasi, E360; Ben Kaczer; Tibor Grasser, E360; Michael Waltl, E360

    B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
    "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
    IEEE Transactions on Device and Materials Reliability (eingeladen), 20 (2020), 2; S. 251 - 257.

    Zusätzliche Informationen

  652. Autor/innen: Bernhard Stampfer, E360; Feng Zhang; Yury Illarionov, E360; Theresia Knobloch, E360; Peng Wu; Michael Waltl, E360; Alexander Grill, E360; J Appenzeller; Tibor Grasser, E360

    B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
    "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
    ACS Nano, 12 (2018), 6; S. 5368 - 5375.

    Zusätzliche Informationen

  653. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Lidija Filipovic, E360; Hans Kosina, E360; Markus Karner, E360; Christian Kernstock, E360; Philipp Prause, E360

    Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause:
    "Consistent Low-Field Mobility Modeling for Advanced MOS Devices";
    Solid-State Electronics, 112 (2015), S. 37 - 45.

    Zusätzliche Informationen

  654. Autor/innen: Zlatan Stanojevic; Viktor Sverdlov, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
    "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
    Solid-State Electronics, 70 (2012), S. 73 - 80.

    Zusätzliche Informationen

  655. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions";
    Ferroelectrics, 427 (2012), 1; S. 78 - 83.

    Zusätzliche Informationen

  656. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Solid-State Cooler: New Opportunities";
    Ferroelectrics, 430 (2012), 1; S. 108 - 114.

    Zusätzliche Informationen

  657. Autor/innen: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
    Ferroelectrics, 442 (2013), 1; S. 10 - 17.

    Zusätzliche Informationen

  658. Autor/innen: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model";
    JETP Letters, 91 (2010), 10; S. 507 - 511.

  659. Autor/innen: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field";
    Technical Physics Letters, 79 (2011), 12; S. 1139 - 1141.

    Zusätzliche Informationen

  660. Autor/innen: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them";
    Journal of Experimental and Theoretical Physics, 116 (2013), 6; S. 987 - 994.

    Zusätzliche Informationen

  661. Autor/innen: A. S. Starkov; Ivan Starkov, E360

    A. S. Starkov, I. Starkov:
    "Domain Wall Motion for Slowly Varying Electric Field";
    Ferroelectrics, 442 (2013), 1; S. 1 - 9.

    Zusätzliche Informationen

  662. Autor/innen: Ivan Starkov, E360; H. Enichlmair

    I. Starkov, H. Enichlmair:
    "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs";
    Journal of Vacuum Science & Technology B, 31 (2013), 1; S. 01A118-1 - 01A118-7.

    Zusätzliche Informationen

  663. Autor/innen: Ivan Starkov, E360; S. E. Tyaginov, E360; H. Enichlmair; Johann Cervenka, E360; C. Jungemann; Sara Carniello; Jong Mun Park, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
    "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
    Journal of Vacuum Science & Technology B, 29 (2011), S. 01AB09-1 - 01AB09-8.

    Zusätzliche Informationen

  664. Autor/innen: Ivan Starkov, E360; S. E. Tyaginov, E360; H. Enichlmair; Jong Mun Park, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
    Solid State Phenomena, 178-179 (2011), S. 267 - 272.

    Zusätzliche Informationen

  665. Autor/innen: James H. Stathis; Souvik Mahapatra; Tibor Grasser, E360

    J. Stathis, S. Mahapatra, T. Grasser:
    "Controversial Issues in Negative Bias Temperature Instability";
    Microelectronics Reliability, 81 (2018), S. 244 - 251.

    Zusätzliche Informationen

  666. Autor/innen: Hannes Stippel, E360; Ernst Leitner, E360; Christoph Pichler, E360; Helmut Puchner, E360; Ernst Strasser, E360; Siegfried Selberherr, E360

    H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr:
    "Process Simulation for the 1990s";
    Microelectronics Journal (eingeladen), 26 (1995), 2-3; S. 203 - 215.

    Zusätzliche Informationen

  667. Autor/innen: Hannes Stippel, E360; Siegfried Selberherr, E360

    H. Stippel, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree";
    IEICE Transactions on Electronics, E77-C (1994), 2; S. 118 - 123.

  668. Autor/innen: Michael Stockinger, E360; Andreas Wild; Siegfried Selberherr, E360

    M. Stockinger, A. Wild, S. Selberherr:
    "Drive Performance of an Asymmetric MOSFET Structure: The Peak Device";
    Microelectronics Journal, 30 (1999), 3; S. 229 - 233.

    Zusätzliche Informationen

  669. Autor/innen: Roberta Stradiotto, KAI GmbH; Gregor Pobegen; C Ostermaier; Tibor Grasser, E360

    R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
    "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces";
    Solid-State Electronics, 125 (2016), S. 142 - 153.

    Zusätzliche Informationen

  670. Autor/innen: Roberta Stradiotto, KAI GmbH; Gregor Pobegen; C Ostermaier; Michael Waltl, E360; Alexander Grill, E360; Tibor Grasser, E360

    R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
    "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
    IEEE Transactions on Electron Devices, 64 (2017), 3; S. 1045 - 1052.

    Zusätzliche Informationen

  671. Autor/innen: Jack Strand; Kaviani Moloud; Al-Moatasem El-Sayed, E360; V. Afanas´Ev; A. L. Shluger

    J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger:
    "Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges";
    Journal of Physics: Condensed Matter, 30 (2018), 23; S. 233001.

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  672. Autor/innen: Ernst Strasser, E360; Gerhard Schrom, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    E. Strasser, G. Schrom, K. Wimmer, S. Selberherr:
    "Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations";
    IEICE Transactions on Electronics, E77-C (1994), 2; S. 92 - 97.

  673. Autor/innen: Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Strasser, S. Selberherr:
    "Algorithms and Models for Cellular Based Topography Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14 (1995), 9; S. 1104 - 1114.

    Zusätzliche Informationen

  674. Autor/innen: Rudolf Strasser, E360; Siegfried Selberherr, E360

    R. Strasser, S. Selberherr:
    "Practical Inverse Modeling with SIESTA";
    IEICE Transactions on Electronics, 83-C (2000), 8; S. 1303 - 1310.

  675. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Modeling of Modern MOSFETs with Strain";
    Journal of Computational Electronics (eingeladen), 8 (2009), 3-4; S. 192 - 208.

    Zusätzliche Informationen

  676. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon";
    Semiconductors (Physics of Semiconductor Devices) (eingeladen), 54 (2020), 12; S. 1713 - 1715.

    Zusätzliche Informationen

  677. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T´ Phase";
    IEEE Transactions on Electron Devices, 67 (2020), 11; S. 4687 - 4690.

    Zusätzliche Informationen

  678. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Heribert Seiler, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr:
    "Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T′ Phase";
    Solid-State Electronics (eingeladen), 184 (2021), 10; S. 108081-1 - 108081-9.

    Zusätzliche Informationen

  679. Autor/innen: Viktor Sverdlov, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
    "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
    Solid-State Electronics, 49 (2005), 9; S. 1510 - 1515.

    Zusätzliche Informationen

  680. Autor/innen: Viktor Sverdlov, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
    "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
    Journal of Computational Electronics, 5 (2006), 4; S. 447 - 450.

    Zusätzliche Informationen

  681. Autor/innen: Viktor Sverdlov, E360; Gerhard Karlowatz, E360; Siddhartha Dhar, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
    "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
    Solid-State Electronics, 52 (2008), 10; S. 1563 - 1568.

    Zusätzliche Informationen

  682. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
    Proceedings of SPIE, 7025 (2008), S. 70251I-1 - 70251I-8.

    Zusätzliche Informationen

  683. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
    Journal of Computational Electronics, 7 (2008), 3; S. 164 - 167.

    Zusätzliche Informationen

  684. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling Current Transport in Ultra-Scaled Field-Effect Transistors";
    Microelectronics Reliability (eingeladen), 47 (2006), 1; S. 11 - 19.

    Zusätzliche Informationen

  685. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field";
    Journal on Systemics, Cybernetics and Informatics (eingeladen), 16 (2018), 2; S. 55 - 59.

  686. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM";
    Solid-State Electronics, 155 (2019), S. 49 - 56.

    Zusätzliche Informationen

  687. Autor/innen: Viktor Sverdlov, E360; Heribert Seiler, E360; Al-Moatasem El-Sayed, E360; Yury Illarionov, E360; Hans Kosina, E360

    V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina:
    "Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase";
    Solid-State Electronics (eingeladen), 193 (2022), S. 108266-1 - 108266-8.

    Zusätzliche Informationen

  688. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts";
    Solid-State Electronics, 159 (2019), S. 43 - 50.

    Zusätzliche Informationen

  689. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing";
    Facta universitatis - series: Electronics and Energetics (eingeladen), 31 (2018), 4; S. 529 - 545.

    Zusätzliche Informationen

  690. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
    Solid-State Electronics, 52 (2008), 12; S. 1861 - 1866.

    Zusätzliche Informationen

  691. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Silicon Spintronics: Progress and Challenges";
    Physics Reports, 585 (2015), S. 1 - 40.

    Zusätzliche Informationen

  692. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor";
    Proceedings of SPIE (eingeladen), 10732 (2018), S. 1073235-1 - 1073235-8.

    Zusätzliche Informationen

  693. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain";
    IEEE Transactions on Nanotechnology, 6 (2007), 3; S. 334 - 340.

    Zusätzliche Informationen

  694. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Current Transport Models for Nanoscale Semiconductor Devices";
    Materials Science and Engineering R-Reports, 58 (2008), 6; S. 228 - 270.

    Zusätzliche Informationen

  695. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations";
    Solid-State Electronics, 51 (2007), 2; S. 299 - 305.

    Zusätzliche Informationen

  696. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spintronics as a Non-Volatile Complement to Modern Microelectronics";
    Informacije Midem - Journal of Microelectronics Electronic Components and Materials (eingeladen), 47 (2017), 4; S. 195 - 210.

  697. Autor/innen: Viktor Sverdlov, E360; Thomas Windbacher, E360; Franz Schanovsky, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
    Journal Integrated Circuits and Systems, 4 (2009), 2; S. 55 - 60.

    Zusätzliche Informationen

  698. Autor/innen: Seyed Mohammad Tabatabaei; M. Noei; Kaveh Khaliji; Mahdi Pourfath, E360; M. Fathipour

    S. M. Tabatabaei, M. Noei, K. Khaliji, M. Pourfath, M. Fathipour:
    "A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor";
    Journal of Applied Physics, 113 (2013), S. 163708-1 - 163708-6.

    Zusätzliche Informationen

  699. Autor/innen: Milan Tapajna; N Killat; Vassil Palankovski, E360; Dagmar Gregusova; Karol Cico; J.-F Carlin; Nicolas Grandjean; M. Kuball; J. Kuzmik

    M. Tapajna, N. Killat, V. Palankovski, D. Gregusova, K. Cico, J. Carlin, N. Grandjean, M. Kuball, J. Kuzmik:
    "Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors";
    IEEE Transactions on Electron Devices, 61 (2014), 8; S. 2793 - 2801.

    Zusätzliche Informationen

  700. Autor/innen: Michael Thesberg, E360; Hans Kosina, E360; Neophytos Neophytou

    M. Thesberg, H. Kosina, N. Neophytou:
    "On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites";
    Journal of Applied Physics, 120 (2016), 23; S. 234302-1 - 234302-9.

    Zusätzliche Informationen

  701. Autor/innen: Michael Thesberg, E360; Hans Kosina, E360; Neophytos Neophytou

    M. Thesberg, H. Kosina, N. Neophytou:
    "On the Lorenz Number of Multiband Materials";
    Physical Review B, 95 (2017), 12; S. 125206-1 - 125206-14.

    Zusätzliche Informationen

  702. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou; Hans Kosina, E360

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach";
    Journal of Electronic Materials, 45 (2016), 3; S. 1584 - 1588.

    Zusätzliche Informationen

  703. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou; Hans Kosina, E360

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices";
    Journal of Applied Physics, 118 (2015), 3; S. 224301-1 - 224301-6.

    Zusätzliche Informationen

  704. Autor/innen: Martin Thurner, E360; Philipp Lindorfer, E360; Siegfried Selberherr, E360

    M. Thurner, P. Lindorfer, S. Selberherr:
    "Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9 (1990), 11; S. 1189 - 1197.

    Zusätzliche Informationen

  705. Autor/innen: Martin Thurner, E360; Siegfried Selberherr, E360

    M. Thurner, S. Selberherr:
    "Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9 (1990), 8; S. 856 - 867.

    Zusätzliche Informationen

  706. Autor/innen: Alexander Toifl, E360; Michael Quell, E360; Xaver Klemenschits, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy";
    IEEE Access, 8 (2020), S. 115406 - 115422.

    Zusätzliche Informationen

  707. Autor/innen: Alexander Toifl, E360; Francio Rodrigues, E360; Luiz Felipe Aguinsky, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub:
    "Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates";
    Semiconductor Science and Technology, 36 (2021), 4; S. 045016-1 - 045016-12.

    Zusätzliche Informationen

  708. Autor/innen: Alexander Toifl, E360; Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Tibor Grasser, E360; Josef Weinbub, E360

    A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
    "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
    IEEE Transactions on Electron Devices, 66 (2019), 7; S. 3060 - 3065.

    Zusätzliche Informationen

  709. Autor/innen: M. Toledano-Luque; Ben Kaczer; J. Franco; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Defect-Centric Perspective of Time-Dependent BTI Variability";
    Microelectronics Reliability, 52 (2012), 9-10; S. 1883 - 1890.

    Zusätzliche Informationen

  710. Autor/innen: M. Toledano-Luque; Ben Kaczer; Tibor Grasser, E360; Ph. J. Roussel; J. Franco; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken:
    "Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions";
    Journal of Vacuum Science & Technology B, 31 (2013), 1; S. 01A114-1 - 01A114-4.

    Zusätzliche Informationen

  711. Autor/innen: M. Toledano-Luque; Ben Kaczer; Ph. J. Roussel; M. Cho; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken:
    "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
    Journal of Vacuum Science & Technology B, 29 (2011), S. 01AA04-1 - 01AA04-5.

    Zusätzliche Informationen

  712. Autor/innen: M. Toledano-Luque; Ben Kaczer; Ph. J. Roussel; J. Franco; L. A. Ragnarsson; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken:
    "Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress";
    Applied Physics Letters, 98 (2011), S. 183506-1 - 183506-3.

    Zusätzliche Informationen

  713. Autor/innen: M. Toledano-Luque; Ben Kaczer; E. Simoen; Ph. J. Roussel; A. Veloso; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken:
    "Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics";
    Microelectronic Engineering, 88 (2011), S. 1243 - 1246.

    Zusätzliche Informationen

  714. Autor/innen: S. B. Touski; Mahdi Pourfath, E360

    S. Touski, M. Pourfath:
    "Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons";
    Applied Physics Letters, 103 (2013), 14; S. 1435061 - 1435063.

    Zusätzliche Informationen

  715. Autor/innen: Oliver Triebl, E360; Tibor Grasser, E360

    O. Triebl, T. Grasser:
    "Vector Discretization Schemes in Technology CAD Environments";
    Romanian Journal of Information Science and Technology, 10 (2007), 2; S. 167 - 176.

  716. Autor/innen: Konstantinos Tselios, E360-01; Dominic Waldhör, E360; Bernhard Stampfer, E360; Jakob Michl, E360; Eleftherios Ioannidis; H. Enichlmair; Tibor Grasser, E360; Michael Waltl, E360

    K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl:
    "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors";
    IEEE Transactions on Device and Materials Reliability (eingeladen), 91 (2021), 2; S. 199 - 206.

    Zusätzliche Informationen

  717. Autor/innen: S. E. Tyaginov, E360; Markus Bina, E360; J. Franco; Yannick Wimmer, E360; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
    "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
    Japanese Journal of Applied Physics, 54 (2015), S. 1 - 6.

    Zusätzliche Informationen

  718. Autor/innen: S. E. Tyaginov, E360; Yury Illarionov, E360; M. I. Vexler; Markus Bina; Johann Cervenka, E360; J. Franco; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
    "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric";
    Journal of Computational Electronics, 13 (2014), 3; S. 733 - 738.

    Zusätzliche Informationen

  719. Autor/innen: S. E. Tyaginov, E360; Markus Jech, E360; J. Franco; Prateek Sharma, E360; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
    "Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs";
    IEEE Electron Device Letters, 37 (2016), 1; S. 84 - 87.

    Zusätzliche Informationen

  720. Autor/innen: S. E. Tyaginov, E360; Alexander Makarov, E360; Markus Jech, E360; M. I. Vexler; J. Franco; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser:
    "Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures";
    Semiconductors (Physics of Semiconductor Devices), 52 (2018), 2; S. 242 - 247.

    Zusätzliche Informationen

  721. Autor/innen: S. E. Tyaginov, E360; Alexander Makarov, E360; Ben Kaczer; Markus Jech, E360; A Chasin; Alexander Grill, E360; Geert Hellings; M. I. Vexler; D Linten; Tibor Grasser, E360

    S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
    "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs";
    Semiconductors (Physics of Semiconductor Devices), 52 (2018), 13; S. 1738 - 1742.

    Zusätzliche Informationen

  722. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; H. Enichlmair; C. Jungemann; Jong Mun Park, E360; E. Seebacher; Roberto Orio, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
    "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
    Microelectronics Reliability, 51 (2011), S. 1525 - 1529.

    Zusätzliche Informationen

  723. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; Oliver Triebl, E360; Johann Cervenka, E360; C. Jungemann; Sara Carniello; J.M. Park; H. Enichlmair; Markus Karner, E360; Christian Kernstock, E360; E. Seebacher; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
    "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
    Microelectronics Reliability, 50 (2010), S. 1267 - 1272.

    Zusätzliche Informationen

  724. Autor/innen: S. E. Tyaginov, E360; Viktor Sverdlov, E360; Ivan Starkov, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
    "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
    Microelectronics Reliability, 49 (2009), S. 998 - 1002.

    Zusätzliche Informationen

  725. Autor/innen: S. E. Tyaginov, E360; M.I. Vexler; A. El Hdiy; K. Gacem; V. Zaporojtchenko

    S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko:
    "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures";
    Materials Science in Semiconductor Processing, 13 (2010), S. 405 - 410.

    Zusätzliche Informationen

  726. Autor/innen: S. E. Tyaginov, E360; M.I. Vexler; N. S. Sokolov; S. M. Suturin; A. G. Banshchikov; Tibor Grasser, E360; Bernd Meinerzhagen

    S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen:
    "Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films";
    Journal of Physics D: Applied Physics, 42 (2009), 115307; S. 1 - 6.

    Zusätzliche Informationen

  727. Autor/innen: S. E. Tyaginov, E360; Yannick Wimmer, E360; Tibor Grasser, E360

    S. E. Tyaginov, Y. Wimmer, T. Grasser:
    "Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
    Facta Universitatis (eingeladen), 27 (2014), 4; S. 479 - 508.

    Zusätzliche Informationen

  728. Autor/innen: Bianka Ullmann, E360; Tibor Grasser, E360

    B. Ullmann, T. Grasser:
    "Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies";
    E&I Elektrotechnik und Informationstechnik, 134 (2017), 7; S. 349 - 354.

    Zusätzliche Informationen

  729. Autor/innen: Bianka Ullmann, E360; Markus Jech, E360; Katja Puschkarsky; Gunnar Andreas Rott; Michael Waltl, E360; Yury Illarionov, E360; H. Reisinger; Tibor Grasser, E360

    B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser:
    "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental";
    IEEE Transactions on Electron Devices, 66 (2019), 1; S. 232 - 240.

    Zusätzliche Informationen

  730. Autor/innen: Bianka Ullmann, E360; Katja Puschkarsky; Michael Waltl, E360; H. Reisinger; Tibor Grasser, E360

    B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser:
    "Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques";
    IEEE Transactions on Device and Materials Reliability, 19 (2019), 2; S. 358 - 362.

    Zusätzliche Informationen

  731. Autor/innen: Stephan Enzo Ungersböck, E360; Siddhartha Dhar, E360; Gerhard Karlowatz, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
    "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
    Journal of Computational Electronics, 6 (2007), 1-3; S. 55 - 58.

    Zusätzliche Informationen

  732. Autor/innen: Stephan Enzo Ungersböck, E360; Siddhartha Dhar, E360; Gerhard Karlowatz, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
    "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
    IEEE Transactions on Electron Devices, 54 (2007), 9; S. 2183 - 2190.

    Zusätzliche Informationen

  733. Autor/innen: Stephan Enzo Ungersböck, E360; Wolfgang Gös, E360; Siddhartha Dhar, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr:
    "The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon";
    Mathematics and Computers in Simulation, 79 (2008), 4; S. 1071 - 1077.

    Zusätzliche Informationen

  734. Autor/innen: Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    E. Ungersböck, H. Kosina:
    "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers";
    Journal of Computational Electronics, 5 (2006), 2-3; S. 79 - 83.

    Zusätzliche Informationen

  735. Autor/innen: Stephan Enzo Ungersböck, E360; Mahdi Pourfath, E360; Hans Kosina, E360; Andreas Gehring, E360; Byoung-Ho Cheong; W Park; Siegfried Selberherr, E360

    E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr:
    "Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors";
    IEEE Transactions on Nanotechnology, 4 (2005), 5; S. 533 - 538.

    Zusätzliche Informationen

  736. Autor/innen: Sergey Vainshtein; Valentin Yuferev; Vassil Palankovski, E360; Duu-Sheng Ong; Juha Kostamovaara

    S. Vainshtein, V. Yuferev, V. Palankovski, D. Ong, J. Kostamovaara:
    "Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations";
    Applied Physics Letters, 92 (2008), S. 062114-1 - 062114-3.

    Zusätzliche Informationen

  737. Autor/innen: Vassileios Vargiamidis; Michael Thesberg, E360; Neophytos Neophytou

    V. Vargiamidis, M. Thesberg, N. Neophytou:
    "Theoretical Model for the Seebeck Coefficient in Superlattice Materials with Energy Relaxation";
    Journal of Applied Physics, 126 (2019), 5; S. 055105.

    Zusätzliche Informationen

  738. Autor/innen: Martin Vasicek, E360; Johann Cervenka, E360; D. Esseni; P Palestri; Tibor Grasser, E360

    M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser:
    "Applicability of Macroscopic Transport Models to Decananometer MOSFETs";
    IEEE Transactions on Electron Devices, 59 (2012), 3; S. 639 - 646.

    Zusätzliche Informationen

  739. Autor/innen: Martin Vasicek, E360; Johann Cervenka, E360; Martin Wagner, E360; Markus Karner, E360; Tibor Grasser, E360

    M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
    "A 2D Non-Parabolic Six-Moments Model";
    Solid-State Electronics, 52 (2008), S. 1606 - 1609.

    Zusätzliche Informationen

  740. Autor/innen: Martin Vasicek, E360; Johann Cervenka, E360; Martin Wagner, E360; Markus Karner, E360; Tibor Grasser, E360

    M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
    "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
    Journal of Computational Electronics, 7 (2008), 3; S. 168 - 173.

    Zusätzliche Informationen

  741. Autor/innen: M. I. Vexler; Yury Illarionov, E360; S. E. Tyaginov, E360; Tibor Grasser, E360

    M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser:
    "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
    Semiconductors (Physics of Semiconductor Devices), 49 (2015), 2; S. 259 - 263.

    Zusätzliche Informationen

  742. Autor/innen: M. I. Vexler; S. E. Tyaginov, E360; Yury Illarionov, E360; Yew Kwang Sing; Ang Diing Shenp; V. V. Fedorov; D. V. Isakov

    M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov:
    "A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures";
    Semiconductors (Physics of Semiconductor Devices), 47 (2013), 5; S. 686 - 694.

    Zusätzliche Informationen

  743. Autor/innen: M.I. Vexler; Yury Illarionov, E360; I.V. Grekhov

    M. Vexler, Yu. Illarionov, I. Grekhov:
    "Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling";
    Semiconductors (Physics of Semiconductor Devices), 51 (2017), 4; S. 444 - 448.

    Zusätzliche Informationen

  744. Autor/innen: M.I. Vexler; G.G. Kareva; Yury Illarionov, E360; I.V. Grekhov

    M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov:
    "Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures";
    Technical Physics Letters, 42 (2016), 11; S. 1090 - 1093.

    Zusätzliche Informationen

  745. Autor/innen: M.I. Vexler; N. S. Sokolov; S. M. Suturin; A. G. Banshchikov; S. E. Tyaginov, E360; Tibor Grasser, E360

    M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser:
    "Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer";
    Journal of Applied Physics, 105 (2009), 083716; S. 1 - 6.

    Zusätzliche Informationen

  746. Autor/innen: K. Vinzenz; Siegfried Selberherr, E360

    K. Vinzenz, S. Selberherr:
    "Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen";
    Acta Chirurgica Austriaca (eingeladen), 28 (1996), 1; S. 60 - 61.

  747. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study";
    Solid-State Electronics, 52 (2008), 11; S. 1791 - 1795.

    Zusätzliche Informationen

  748. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Maroldt; Rüdiger Quay, E360

    S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
    "High-Temperature Modeling of AlGaN/GaN HEMTs";
    Solid-State Electronics, 54 (2010), 10; S. 1105 - 1112.

    Zusätzliche Informationen

  749. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Maroldt; Rüdiger Quay, E360; S. Murad; T. Rödle; Siegfried Selberherr, E360

    S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr:
    "Physics-Based Modeling of GaN HEMTs";
    IEEE Transactions on Electron Devices, 59 (2012), 3; S. 685 - 693.

    Zusätzliche Informationen

  750. Autor/innen: Martin Wagner, E360; Markus Karner, E360; Johann Cervenka, E360; Martin Vasicek, E360; Hans Kosina, E360; Stefan Holzer, E360; Tibor Grasser, E360

    M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser:
    "Quantum Correction for DG MOSFETs";
    Journal of Computational Electronics, 5 (2007), S. 397 - 400.

    Zusätzliche Informationen

  751. Autor/innen: Martin Wagner, E360; Gerhard Span; Stefan Holzer, E360; Tibor Grasser, E360

    M. Wagner, G. Span, S. Holzer, T. Grasser:
    "Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content";
    Semiconductor Science and Technology, 22 (2007), S. 173 - 176.

  752. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
    "An Advanced Equation Assembly Module";
    Engineering with Computers, 21 (2005), 2; S. 151 - 163.

    Zusätzliche Informationen

  753. Autor/innen: Stephan Wagner, E360; Vassil Palankovski, E360; G. Röhrer; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
    "Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
    Applied Surface Science, 224 (2004), 1-4; S. 365 - 369.

    Zusätzliche Informationen

  754. Autor/innen: Dominic Waldhör, E360; Christian Schleich, E360; Jakob Michl, E360; Bernhard Stampfer, E360; Konstantinos Tselios, E360-01; Eleftherios Ioannidis; H. Enichlmair; Michael Waltl, E360; Tibor Grasser, E360

    D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser:
    "Toward Automated Defect Extraction From Bias Temperature Instability Measurements";
    IEEE Transactions on Electron Devices, 68 (2021), 8; S. 4057 - 4063.

    Zusätzliche Informationen

  755. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Reliability of Miniaturized Transistors from the Perspective of Single-Defects";
    Micromachines (eingeladen), 11 (2020), 8; S. 736-1 - 736-21.

    Zusätzliche Informationen

  756. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors";
    IEEE Transactions on Device and Materials Reliability (eingeladen), 20 (2020), 2; S. 242 - 250.

    Zusätzliche Informationen

  757. Autor/innen: Michael Waltl, E360; Yoanlys Hernandez, E360; Christian Schleich, E360; Katja Anna Waschneck; Bernhard Stampfer, E360; H. Reisinger; Tibor Grasser, E360

    M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser:
    "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models";
    Materials Science Forum, 1062 (2022), S. 688 - 695.

    Zusätzliche Informationen

  758. Autor/innen: Michael Waltl, E360; Theresia Knobloch, E360; Konstantinos Tselios, E360-01; Lado Filipovic, E360; Bernhard Stampfer, E360; Yoanlys Hernandez, E360; Dominic Waldhör, E360; Yuri Illarionov; Ben Kaczer; Tibor Grasser, E360

    M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser:
    "Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?";
    Advanced Materials (eingeladen), n/a (2022), S. 2201082-1 - 2201082-23.

    Zusätzliche Informationen

  759. Autor/innen: Michael Waltl, E360; Gerhard Rzepa, E360; Alexander Grill, E360; Wolfgang Gös, E360; J. Franco; Ben Kaczer; L. Witters; J. Mitard; N. Horiguchi; Tibor Grasser, E360

    M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
    "Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
    IEEE Transactions on Electron Devices, 64 (2017), 5; S. 2092 - 2098.

    Zusätzliche Informationen

  760. Autor/innen: Michael Waltl, E360; Gerhard Rzepa, E360; Alexander Grill, E360; Wolfgang Gös, E360; J. Franco; Ben Kaczer; L. Witters; J. Mitard; N. Horiguchi; Tibor Grasser, E360

    M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
    "Superior NBTI in High-k SiGe Transistors - Part II: Theory";
    IEEE Transactions on Electron Devices, 64 (2017), 5; S. 2099 - 2105.

    Zusätzliche Informationen

  761. Autor/innen: Michael Waltl, E360; Bernhard Stampfer, E360; Gerhard Rzepa; Ben Kaczer; Tibor Grasser, E360

    M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser:
    "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors";
    Microelectronics Reliability, 114 (2020), S. 113746-1 - 113746-5.

    Zusätzliche Informationen

  762. Autor/innen: Michael Waltl, E360; Dominic Waldhör, E360; Konstantinos Tselios, E360-01; Bernhard Stampfer, E360; Christian Schleich, E360; Gerhard Rzepa; H. Enichlmair; Eleftherios Ioannidis; R. Minixhofer; Tibor Grasser, E360

    M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser:
    "Impact of Single-Defects on the Variability of CMOS Inverter Circuits";
    Microelectronics Reliability, 126 (2021), S. 114275-1 - 114275-6.

    Zusätzliche Informationen

  763. Autor/innen: L. Wang; A.R. Brown; Mihail Nedjalkov, E360; Craig Alexander; B. Cheng; C. Millar; A Asenov

    L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs";
    IEEE Transactions on Electron Devices, 62 (2015), 7; S. 2106­ - 2112.

    Zusätzliche Informationen

  764. Autor/in: Christoph Wasshuber, E360

    C. Wasshuber:
    "Grenzen der Miniaturisierung - Die Zukunft der Mikroelektronik";
    Informatik Spektrum (eingeladen), 21 (1998), 4; S. 223 - 226.

  765. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360

    C. Wasshuber, H. Kosina:
    "A Single-Electron Device and Circuit Simulator";
    Superlattices and Microstructures, 21 (1997), 1; S. 37 - 42.

    Zusätzliche Informationen

  766. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360

    C. Wasshuber, H. Kosina:
    "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge";
    VLSI Design, 6 (1998), 1-4; S. 35 - 38.

    Zusätzliche Informationen

  767. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Wasshuber, H. Kosina, S. Selberherr:
    "A Comparative Study of Single-Electron Memories";
    IEEE Transactions on Electron Devices, 45 (1998), 11; S. 2365 - 2371.

    Zusätzliche Informationen

  768. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Wasshuber, H. Kosina, S. Selberherr:
    "A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 7; S. 1 - 18.

    Zusätzliche Informationen

  769. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Wasshuber, H. Kosina, S. Selberherr:
    "SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 9; S. 937 - 944.

    Zusätzliche Informationen

  770. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Wasshuber, H. Kosina, S. Selberherr:
    "Single-Electron Memories";
    VLSI Design, 8 (1998), 1-4; S. 219 - 223.

    Zusätzliche Informationen

  771. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Electron Interference in a Double-Dopant Potential Structure";
    Physica Status Solidi - Rapid Research Letters, 12 (2018), 7; S. 1800111-1 - 1800111-4.

    Zusätzliche Informationen

  772. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Gate-Controlled Electron Quantum Interference Logic";
    Nanoscale, 14 (2022), 37; S. 13520 - 13525.

    Zusätzliche Informationen

  773. Autor/innen: Josef Weinbub, E360; Paul Ellinghaus, E360; Mihail Nedjalkov, E360

    J. Weinbub, P. Ellinghaus, M. Nedjalkov:
    "Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
    Journal of Computational Electronics, 14 (2015), 4; S. 922 - 929.

    Zusätzliche Informationen

  774. Autor/innen: Josef Weinbub, E360; D.K. Ferry

    J. Weinbub, D.K. Ferry:
    "Recent Advances in Wigner Function Approaches";
    Applied Physics Reviews (eingeladen), 5 (2018), 4; S. 041104-1 - 041104-24.

    Zusätzliche Informationen

  775. Autor/innen: Josef Weinbub, E360; Andreas Hössinger, E360

    J. Weinbub, A. Hössinger:
    "Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method";
    Journal of Computational Electronics, 13 (2014), 4; S. 877 - 884.

    Zusätzliche Informationen

  776. Autor/innen: Josef Weinbub, E360; Andreas Hössinger, Silvaco Europe L ...

    J. Weinbub, A. Hössinger:
    "Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method";
    Procedia Computer Science, 80 (2016), S. 2271 - 2275.

    Zusätzliche Informationen

  777. Autor/innen: Josef Weinbub, E360; Robert Kosik, E360

    J. Weinbub, R. Kosik:
    "Computational Perspective on Recent Advances in Quantum Electronics: From Electron Quantum Optics to Nanoelectronic Devices and Systems";
    Journal of Physics: Condensed Matter (eingeladen), 34 (2022), 16; S. 163001-1 - 163001-32.

    Zusätzliche Informationen

  778. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "Highly Flexible and Reusable Finite Element Simulations with ViennaX";
    Journal of Computational and Applied Mathematics, 270 (2014), S. 484 - 495.

    Zusätzliche Informationen

  779. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "ViennaX: A Parallel Plugin Execution Framework for Scientific Computing";
    Engineering with Computers, 30 (2014), 4; S. 651 - 668.

    Zusätzliche Informationen

  780. Autor/innen: Josef Weinbub, E360; Matthias Wastl; Karl Rupp, E360; Florian Rudolf, E360; Siegfried Selberherr, E360

    J. Weinbub, M. Wastl, K. Rupp, F. Rudolf, S. Selberherr:
    "ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering";
    Applied Mathematics and Computation, 267 (2015), S. 282 - 293.

    Zusätzliche Informationen

  781. Autor/innen: Chao Wen; A. G. Banshchikov; Yury Illarionov, E360; Werner Frammelsberger; Theresia Knobloch, E360; Fei Hui; N. S. Sokolov; Tibor Grasser, E360; Mario Lanza

    C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza:
    "Dielectric Properties of Ultrathin CaF2 Ionic Crystals";
    Advanced Materials, 32 (2020), 34; S. 2002525-1 - 2002525-6.

    Zusätzliche Informationen

  782. Autor/innen: Wilfried Wessner, E360; Johann Cervenka, E360; Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr:
    "Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25 (2006), 10; S. 2129 - 2139.

    Zusätzliche Informationen

  783. Autor/innen: Christoph Wilhelmer, E360-01; Dominic Waldhör, E360; Markus Jech, E360; Al-Moatasem El-Sayed, E360; Lukas Cvitkovich, E360-01; Michael Waltl, E360; Tibor Grasser, E360

    C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser:
    "Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture";
    Microelectronics Reliability, 139 (2022), 114801.

    Zusätzliche Informationen

  784. Autor/innen: Yannick Wimmer, E360; Al-Moatasem El-Sayed, E360; Wolfgang Gös, E360; Tibor Grasser, E360; A. L. Shluger

    Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
    "Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices";
    Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences (eingeladen), 472 (2016), 2190; S. 1 - 23.

    Zusätzliche Informationen

  785. Autor/innen: Thomas Windbacher, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
    "Modelling of Multipurpose Spintronic Devices";
    International Journal of Nanotechnology, 12 (2015), 3/4; S. 313 - 331.

    Zusätzliche Informationen

  786. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
    "Multiple Purpose Spin Transfer Torque Operated Devices";
    Facta Universitatis, 26 (2013), 3; S. 227 - 238.

    Zusätzliche Informationen

  787. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Bias-Field-Free Spin Transfer Oscillator";
    Journal of Applied Physics, 115 (2014), 17; S. 17C901-1 - 17C901-3.

    Zusätzliche Informationen

  788. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
    Solid-State Electronics, 108 (2015), S. 2 - 7.

    Zusätzliche Informationen

  789. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
    Proceedings of SPIE (eingeladen), 9931 (2016), S. 99312M-1 - 99312M-12.

    Zusätzliche Informationen

  790. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr:
    "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting";
    Solid-State Electronics, 54 (2010), 2; S. 137 - 142.

    Zusätzliche Informationen

  791. Autor/innen: Thomas Windbacher, E360; Oliver Triebl, E360; Dimitry Osintsev, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
    Microelectronic Engineering, 112 (2013), S. 188 - 192.

    Zusätzliche Informationen

  792. Autor/innen: Robert Wittmann, E360; Siegfried Selberherr, E360

    R. Wittmann, S. Selberherr:
    "A Study of Ion Implantation into Crystalline Germanium";
    Solid-State Electronics, 51 (2007), 6; S. 982 - 988.

    Zusätzliche Informationen

  793. Autor/innen: J. Woerle; Vito Simonka, E360; E. Müller; Andreas Hössinger, Silvaco Europe L ...; H. Sigg; Siegfried Selberherr, E360; Josef Weinbub, E360; M. Camarda; Ulrike Grossner

    J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
    "Surface Morphology of 4H-SiC After Thermal Oxidation";
    Materials Science Forum, 963 (2019), S. 180 - 183.

    Zusätzliche Informationen

  794. Autor/innen: Stefanie Wolf, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    S. Wolf, N. Neophytou, H. Kosina:
    "Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness";
    Journal of Applied Physics, 115 (2014), 20; S. 204306 - 204313.

    Zusätzliche Informationen

  795. Autor/innen: Stefanie Wolf, E360; Neophytos Neophytou, E360; Zlatan Stanojevic; Hans Kosina, E360

    S. Wolf, N. Neophytou, Z. Stanojevic, H. Kosina:
    "Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes";
    Journal of Electronic Materials, 43 (2014), 10; S. 3870 - 3875.

    Zusätzliche Informationen

  796. Autor/innen: Zhicheng Wu; J. Franco; Anne Vandooren; Ben Kaczer; Philippe Roussel; Gerhard Rzepa, E360; Tibor Grasser, E360

    Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser:
    "Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration";
    IEEE Transactions on Device and Materials Reliability, 9 (2019), 2; S. 262 - 267.

    Zusätzliche Informationen

  797. Autor/innen: Arash Yazdanpanah; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
    "A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons";
    IEEE Transactions on Electron Devices, 59 (2012), 2; S. 433 - 440.

    Zusätzliche Informationen

  798. Autor/innen: A. Yazdanpanah Goharrizi; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina:
    "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness";
    IEEE Transactions on Electron Devices, 59 (2012), 12; S. 3527 - 3532.

    Zusätzliche Informationen

  799. Autor/innen: A. Yazdanpanah Goharrizi; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
    "An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons";
    IEEE Transactions on Electron Devices, 58 (2011), 11; S. 3725 - 3735.

    Zusätzliche Informationen

  800. Autor/innen: Karl Zankel; Hans Kosina, E360

    K. Zankel, H. Kosina:
    "Capacitance Simulation of Irradiated Semiconductor Detectors";
    Il Nuovo Cimento, 112 (1999), 1-2; S. 43 - 47.

  801. Autor/innen: Majid Zeraati; S. Mehdi Vaez Allaei; I. Abdolhosseini Sarsari; Mahdi Pourfath, E360; Davide Donadio

    M. Zeraati, S.M.V. Allaei, I.A. Sarsari, M. Pourfath, D. Donadio:
    "Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study";
    Physical Review B, 93 (2016), 8; S. 085424-1 - 085424-6.

    Zusätzliche Informationen

  802. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
    "Electromigration Reliability of Open TSV Structures";
    Microelectronics Reliability, 54 (2014), 9-10; S. 2133 - 2137.

    Zusätzliche Informationen


Editorials in wiss. Zeitschriften


  1. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Editorial Preface to the Special Section on Electromigration Published in March 2009";
    IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; S. 103.

    Zusätzliche Informationen

  2. Autor/innen: Lado Filipovic, E360; Tibor Grasser, E360

    L. Filipovic, T. Grasser:
    "Editorial for the Special Issue on Miniaturized Transistors";
    Micromachines, 10 (2019), 5; S. 1 - 3.

    Zusätzliche Informationen

  3. Autor/innen: Lado Filipovic, E360; Tibor Grasser, E360

    L. Filipovic, T. Grasser:
    "Special Issue on Miniaturized Transistors, Volume II";
    Micromachines, 13 (2022), 4; S. 1 - 4.

    Zusätzliche Informationen

  4. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Modelling the Negative Bias Temperature Instability (Editorial)";
    Microelectronics Reliability, 47 (2007), 6; S. 839 - 840.

    Zusätzliche Informationen

  5. Autor/innen: Tibor Grasser, E360; James H. Stathis

    T. Grasser, J. Stathis:
    "Bias Temperature Instability (BTI) in MOS Devices";
    Microelectronics Reliability, 80 (2018).

  6. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "International Workshop on Computational Electronics (Editorial)";
    Journal of Computational Electronics, 5 (2007), 4; S. 283 - 284.

    Zusätzliche Informationen

  7. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "The Field of Computational Electronics from a European Perspective (Guest Editorial)";
    Journal of Computational Electronics, 8 (2009), 3-4; S. 173.

    Zusätzliche Informationen

  8. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; D.K. Ferry

    M. Nedjalkov, J. Weinbub, D.K. Ferry:
    "Introduction to the Special Issue on Wigner Functions";
    Journal of Computational Electronics, 14 (2015), 4; S. 857 - 858.

    Zusätzliche Informationen

  9. Autor/innen: E. Sangiorgi; A Asenov; H. Bennett; R. Dutton; D. Esseni; M. Giles; M. Hane; K. Nishi; J. Ranaweera; Siegfried Selberherr, E360

    E. Sangiorgi, A. Asenov, H. Bennett, R. Dutton, D. Esseni, M. Giles, M. Hane, K. Nishi, J. Ranaweera, S. Selberherr:
    "Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements";
    IEEE Transactions on Electron Devices, 58 (2011), 8; S. 2190 - 2196.

    Zusätzliche Informationen

  10. Autor/innen: E. Sangiorgi; A Asenov; H.S. Bennett; R.W. Dutton; D. Esseni; M. Giles; M. Hane; C. Jungemann; K. Nishi; Siegfried Selberherr, E360; S. Takagi

    E. Sangiorgi, A. Asenov, H.S. Bennett, R.W. Dutton, D. Esseni, M. Giles, M. Hane, C. Jungemann, K. Nishi, S. Selberherr, S. Takagi:
    "Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices";
    IEEE Transactions on Electron Devices, 54 (2007), 9; S. 2072 - 2078.

    Zusätzliche Informationen

  11. Autor/innen: Viktor Sverdlov, E360; Nuttachai Jutong

    V. Sverdlov, N. Jutong:
    "Editorial for the Special Issue on Magnetic and Spin Devices";
    Micromachines, 13 (2022), S. 493-1 - 493-3.

    Zusätzliche Informationen

  12. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016";
    Solid-State Electronics, 128 (2017), 2; S. 1 - 2.

    Zusätzliche Informationen

  13. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Editorial for the Special Issue on Robust Microelectronic Devices";
    Crystals, 12 (2022), S. 16-1 - 16-3.

    Zusätzliche Informationen

  14. Autor/innen: Josef Weinbub, E360; Mark Everitt; D.K. Ferry

    J. Weinbub, M. Everitt, D.K. Ferry:
    "Special Issue on Wigner Functions in Computational Electronics and Photonics";
    Journal of Computational Electronics (eingeladen), 20 (2021), 6; S. 2019.

    Zusätzliche Informationen


Buchbeiträge


  1. Autor/innen: Luiz Felipe Aguinsky, E360; Georg Wachter, E141-02; Francio Rodrigues, E360; Alexander Scharinger, E360; Alexander Toifl, E360; Michael Trupke, E141-02; Ulrich Schmid, E366-02; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360
    Andere beteiligte Person: Bogdan Cretu

    L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
    "Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si";
    in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2021, S. 1 - 4.

    Zusätzliche Informationen

  2. Autor/innen: Shaikh Ahmed; Mihail Nedjalkov, E360; Dragica Vasileska
    Andere beteiligte Person: V. Chan

    S. Ahmed, M. Nedjalkov, D. Vasileska:
    "Comparative Study of Various Self-Consistent Event Biasing Schemes for Monte Carlo Simulations of Nanoscale MOSFETs";
    in: "Theory and Applications of Monte Carlo Simulations", V. Chan (Hrg.); Intech Open Access Publisher, 2013, ISBN: 978-953-51-1012-5, S. 109 - 133.

    Zusätzliche Informationen

  3. Autor/innen: Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360
    Andere beteiligte Personen: K. K. Sabelfeld; Ivan Dimov

    O. Baumgartner, Z. Stanojevic, H. Kosina:
    "Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers";
    in: "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (Hrg.); De Gruyter, 2012, ISBN: 978-3-11-029347-0, S. 59 - 67.

  4. Autor/innen: Majid Benam, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Geno Nikolov; Natalia T. Kolkovska; Krassimir Georgiev

    M. Benam, M. Nedjalkov, S. Selberherr:
    "A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 11189; G. Nikolov, N. T. Kolkovska, K. Georgiev (Hrg.); herausgegeben von: Nikolov G., Kolkovska, N., Georgiev, K.; Springer International Publishing, 2019, ISBN: 978-3-030-10692-8, S. 263 - 272.

    Zusätzliche Informationen

  5. Autor/innen: Majid Benam, E360; Maciej Wołoszyn; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Georgiev; Hristo Kostadinov; Elena Lilkova

    M. Benam, M. Wołoszyn, S. Selberherr:
    "Self-Consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach";
    in: "Advanced Computing in Industrial Mathematics, Studies in Computational Intelligence", 961; I. Georgiev, H. Kostadinov, E. Lilkova (Hrg.); Springer, 2021, ISBN: 978-3-030-71615-8, S. 60 - 67.

    Zusätzliche Informationen

  6. Autor/innen: Markus Bina, E360; Karl Rupp, E360
    Andere beteiligte Person: Tibor Grasser, E360

    M. Bina, K. Rupp:
    "The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation";
    in: "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, S. 197 - 220.

    Zusätzliche Informationen

  7. Autor/innen: Hajdin Ceric, E360; Rene Heinzl, E360; Christian Hollauer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr:
    "Microstructure and Stress Aspects of Electromigration Modeling";
    in: "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, S. 262 - 268.

  8. Autor/innen: Hajdin Ceric, E360; Houman Zahedmanesh; Roberto Lacerda de Orio; Siegfried Selberherr, E360
    Andere beteiligte Person: Sergey Y. Yurish

    H. Ceric, H. Zahedmanesh, R. Lacerda de Orio, S. Selberherr:
    "Models and Techniques for Reliability Studies of Nano-Scaled Interconnects";
    in: "Advances in Measurements and Instrumentation: Reviews", 3; S. Yurish (Hrg.); International Frequency Sensor Association (IFSA) Publishing, 2021, ISBN: 978-84-09-33338-7, S. 93 - 111.

  9. Autor/innen: Johann Cervenka, E360; Paul Ellinghaus, E360; Mihail Nedjalkov, E360
    Andere beteiligte Personen: Ivan Dimov; Stefka Fidanova; Ivan Lirkov

    J. Cervenka, P. Ellinghaus, M. Nedjalkov:
    "Deterministic Solution of the Discrete Wigner Equation";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 8962; I. Dimov, S. Fidanova, I. Lirkov (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, S. 149 - 156.

    Zusätzliche Informationen

  10. Autor/innen: Johann Cervenka, E360; Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Erasmus Langer, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    J. Cervenka, P. Ellinghaus, M. Nedjalkov, E. Langer:
    "Optimization of the Deterministic Solution of the Discrete Wigner Equation";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, S. 269 - 276.

    Zusätzliche Informationen

  11. Autor/innen: Johann Cervenka, E360; Aleksandar Zoric; Todor Gurov; G. Arsov

    J. Cervenka, A. Zoric, T. Gurov, G. Arsov:
    "GRINKO - Grid e-Infrastructure and Networking with Kosovo";
    in: "JOINT RESEARCH AND TECHNOLOGY DEVELOPMENT Projects 2007-2010", KAIP, 2010, S. 150 - 162.

  12. Autor/innen: Raffaele Alberto Coppeta, E360; Ayoub Lahlalia, E360; Darjan Kozic; Rene Hammer; Johann Riedler; Gregor Toschkoff; Anderson P. Singulani; Zeeshan Ali; Martin Sagmeister, ams AG; Sara Carniello; Siegfried Selberherr, E360; Lado Filipovic, E360
    Andere beteiligte Personen: Willem Dirk van Driel; Oliver Pyper; Cornelia Schumann

    R. Coppeta, A. Lahlalia, D. Kozic, R. Hammer, J. Riedler, G. Toschkoff, A.P. Singulani, Z. Ali, M. Sagmeister, S. Carniello, S. Selberherr, L. Filipovic:
    "Electro-Thermal-Mechanical Modeling of Gas Sensor Hotplates";
    in: "Sensor Systems Simulations", W. van Driel, O. Pyper, C. Schumann (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-16577-2, S. 17 - 72.

    Zusätzliche Informationen

  13. Autor/innen: Ivan Dimov; Mihail Nedjalkov, E360; J. M. Sellier; Siegfried Selberherr, E360
    Andere beteiligte Personen: Giovanni Russo; Vincenzo Capasso; Giuseppe Nicosia; Vittorio Romano

    I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
    "Neumann Series Analysis of the Wigner Equation Solution";
    in: "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22; G. Russo, V. Capasso, G. Nicosia, V. Romano (Hrg.); Springer International Publishing, 2016, (eingeladen), ISBN: 978-3-319-23412-0, S. 701 - 707.

    Zusätzliche Informationen

  14. Autor/innen: Al-Moatasem El-Sayed, E360; Heribert Seiler, E360; Hans Kosina, E360; Markus Jech, E360; Dominic Waldhör, E360; Viktor Sverdlov, E360
    Andere beteiligte Person: Bogdan Cretu

    A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov:
    "First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations";
    in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2021, ISBN: 978-1-6654-3745-5, S. 1 - 4.

    Zusätzliche Informationen

  15. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Efficient Calculation of the Two-Dimensional Wigner Potential";
    in: "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, S. 1 - 3.

    Zusätzliche Informationen

  16. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Implications of the Coherence Length on the Discrete Wigner Potential";
    in: "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, S. 1 - 3.

    Zusätzliche Informationen

  17. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Dimov; Stefka Fidanova; Ivan Lirkov

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 8962; I. Dimov, S. Fidanova, I. Lirkov (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, S. 27 - 33.

    Zusätzliche Informationen

  18. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "The Influence of Electrostatic Lenses on Wave Packet Dynamics";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, S. 277 - 284.

    Zusätzliche Informationen

  19. Autor/innen: Lado Filipovic, E360; Ayoub Lahlalia, E360
    Andere beteiligte Personen: J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen; A. Yoshino

    L. Filipovic, A. Lahlalia:
    "System-on-Chip Sensor Integration in Advanced CMOS Technology";
    in: "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2018, (eingeladen), ISBN: 978-1-62332-488-9, S. 151 - 162.

    Zusätzliche Informationen

  20. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    L. Filipovic, S. Selberherr:
    "A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, S. 447 - 454.

    Zusätzliche Informationen

  21. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: K. K. Sabelfeld; Ivan Dimov

    L. Filipovic, S. Selberherr:
    "A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator";
    in: "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (Hrg.); De Gruyter, 2012, ISBN: 978-3-11-029347-0, S. 97 - 104.

    Zusätzliche Informationen

  22. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: M. Iqubal Khan

    L. Filipovic, S. Selberherr:
    "Electro-Thermo-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors";
    in: "Prime Archives in Material Science", 3; M. Khan (Hrg.); Vide Leaf, 2021, (eingeladen), ISBN: 978-81-953047-9-0, S. 1 - 38.

  23. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Y. Omura; J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen

    L. Filipovic, S. Selberherr:
    "Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
    in: "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2015, ISBN: 978-1-62332-238-0, S. 243 - 250.

    Zusätzliche Informationen

  24. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360; Giorgio C. Mutinati; Elise Brunet; S. Steinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank; Christian Gspan; Werner Grogger
    Andere beteiligte Personen: Gi-Chul Yang; Sio-Long Ao; Len Gelman

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
    "Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors";
    in: "Transactions on Engineering Technologies", G.-C. Yang, S.-L. Ao, L. Gelman (Hrg.); Springer, 2014, ISBN: 978-94-017-8831-1, S. 295 - 310.

    Zusätzliche Informationen

  25. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Siegfried Selberherr, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360
    Andere beteiligte Person: Bogdan Cretu

    S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
    in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2020, ISBN: 978-1-7281-8765-5, S. 1 - 4.

    Zusätzliche Informationen

  26. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Gös; Viktor Sverdlov, E360
    Andere beteiligte Personen: J. A. Martino; B.-Y. Nguyen; Francisco Gamiz; H. Ishii; J.-P. Raskin; Siegfried Selberherr, E360; E. Simoen

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov:
    "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
    in: "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2020, ISBN: 978-1-62332-604-3, S. 159 - 164.

    Zusätzliche Informationen

  27. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Tunneling Models for Semiconductor Device Simulation";
    in: "Handbook of Theoretical and Computational Nanotechnology", herausgegeben von: Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, S. 469 - 543.

  28. Autor/innen: Joydeep Ghosh; Dimitry Osintsev, E360; Viktor Sverdlov, E360; S. Ganguly
    Andere beteiligte Personen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donetti

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
    "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
    in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (Hrg.); IEEE, 2018, ISBN: 978-1-5386-4812-4, S. 205 - 208.

    Zusätzliche Informationen

  29. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Y. Omura; J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
    in: "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2015, ISBN: 978-1-62332-238-0, S. 233 - 240.

    Zusätzliche Informationen

  30. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
    "Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, S. 285 - 292.

    Zusätzliche Informationen

  31. Autor/innen: Joydeep Ghosh, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, V. Sverdlov, S. Selberherr:
    "Spin Diffusion and the Role of Screening Effects in Semiconductors";
    in: "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, S. 1 - 4.

    Zusätzliche Informationen

  32. Autor/innen: Lukas Gnam, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360
    Andere beteiligte Personen: Lado Filipovic, E360; Tibor Grasser, E360

    L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "Accelerating Flux Calculations Using Sparse Sampling";
    in: "Miniaturized Transistors", L. Filipovic, T. Grasser (Hrg.); MDPI, 2019, (eingeladen), ISBN: 978-3-03921-010-7, S. 176 - 192.

    Zusätzliche Informationen

  33. Autor/innen: Lukas Gnam, E360; Siegfried Selberherr, E360; Josef Weinbub, E360
    Andere beteiligte Personen: Geno Nikolov; Natalia T. Kolkovska; Krassimir Georgiev

    L. Gnam, S. Selberherr, J. Weinbub:
    "Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 11189; G. Nikolov, N. T. Kolkovska, K. Georgiev (Hrg.); Springer International Publishing, 2019, ISBN: 978-3-030-10692-8, S. 106 - 114.

    Zusätzliche Informationen

  34. Autor/innen: Wolfgang Gös, E360; Franz Schanovsky, E360; Tibor Grasser, E360
    Andere beteiligte Person: Tibor Grasser, E360

    W. Gös, F. Schanovsky, T. Grasser:
    "Advanced Modeling of Oxide Defects";
    in: "Bias Temperature Instability for Devices and Circuits", T. Grasser (Hrg.); Springer New York, 2013, ISBN: 978-1-4614-7909-3, S. 409 - 446.

    Zusätzliche Informationen

  35. Autor/innen: Wolfgang Gös, E360; Franz Schanovsky, E360; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; Tibor Grasser, E360

    W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
    "Charge Trapping and the Negative Bias Temperature Instability";
    in: "Physics and Technology of High-k Materials 8", ECS Transactions, 2010, (eingeladen), ISBN: 978-1-56677-822-0, S. 565 - 589.

    Zusätzliche Informationen

  36. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation";
    in: "Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II", herausgegeben von: S.G. Pandalai; Transworld Research Network, 2004, (eingeladen), ISBN: 81-7895-156-8, S. 423 - 446.

  37. Autor/in: Tibor Grasser, E360
    Andere beteiligte Person: Tibor Grasser, E360

    T. Grasser:
    "The Capture/Emission Time Map Approach to the Bias Temperature Instability";
    in: "Bias Temperature Instability for Devices and Circuits", T. Grasser (Hrg.); Springer New York, 2013, ISBN: 978-1-4614-7909-3, S. 447 - 481.

    Zusätzliche Informationen

  38. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Ben Kaczer
    Andere beteiligte Personen: R. Ekwal Sah; J. Zhang; J. Deen; J. Yota; A. Toriumi

    T. Grasser, W. Gös, B. Kaczer:
    "Critical Modeling Issues in Negative Bias Temperature Instability";
    in: "215th ECS Meeting", R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (Hrg.); ECS Transactions, 2009, (eingeladen), S. 265 - 287.

    Zusätzliche Informationen

  39. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, W. Gös, B. Kaczer:
    "Towards Engineering Modeling of Negative Bias Temperature Instability";
    in: "Defects in Microelectronic Materials and Devices", herausgegeben von: D. Fleetwood, R. Schrimpf, S. Pantelides; Taylor and Francis/CRC Press, 2008, (eingeladen), ISBN: 1420043765, S. 399 - 436.

  40. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: Tibor Grasser, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hot Carrier Effects within Macroscopic Transport Models";
    in: "Advanced Device Modeling and Simulation", T. Grasser (Hrg.); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, S. 173 - 201.

  41. Autor/innen: Tibor Grasser, E360; Erasmus Langer, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: Karl Unterrainer, E387-01

    T. Grasser, E. Langer, S. Selberherr:
    "Institut für Mikroelektronik";
    in: "Die Fakultät für Elektrotechnik und Informationstechnik", K. Unterrainer (Hrg.); Böhlau, 2015, ISBN: 978-3-205-20128-1, S. 57 - 62.

    Zusätzliche Informationen

  42. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Luryi; J. Xu; A. Zaslavsky

    T. Grasser, S. Selberherr:
    "Current Transport Models for Engineering Applications";
    in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (Hrg.); John Wiley & Sons, 2002, (eingeladen), ISBN: 0-471-21247-4, S. 87 - 98.

  43. Autor/innen: T.V. Gurov; E. Atanassov; Ivan Dimov; Vassil Palankovski, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    T.V. Gurov, E. Atanassov, I. Dimov, V. Palankovski:
    "Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part II: Stochastic Approach and Grid Implementation";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, S. 157 - 163.

    Zusätzliche Informationen

  44. Autor/innen: T.V. Gurov; E. Atanassov; Mihail Nedjalkov, E360; Ivan Dimov
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    T.V. Gurov, E. Atanassov, M. Nedjalkov, I. Dimov:
    "Modeling of Carrier Transport in Nanowires";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4487; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2007, ISBN: 978-3-540-72583-1, S. 739 - 746.

    Zusätzliche Informationen

  45. Autor/innen: E. A. Gutierrez-Dominguez; Francisco Gamiz; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Alfonso Torres-Jacome
    Andere beteiligte Person: E. A. Gutierrez-Dominguez

    E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome:
    "Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices";
    in: "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", 27; E. Gutierrez-Dominguez (Hrg.); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, S. 17 - 185.

    Zusätzliche Informationen

  46. Autor/innen: Tomás Hadámek, E360; Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360
    Andere beteiligte Person: Bogdan Cretu

    T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in MRAM at Writing: A Finite Element Approach";
    in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2021, ISBN: 978-1-6654-3746-2, S. 1 - 4.

    Zusätzliche Informationen

  47. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: J. Filipe; B. Shishkov; M. Helfert; L.A. Maciaszek

    R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
    "Concepts for High-Perfomance Scientific Computing";
    in: "Software and Data Technologies, Communications in Computer and Information Science", 22; J. Filipe, B. Shishkov, M. Helfert, L. Maciaszek (Hrg.); Springer, 2009, ISBN: 978-3-540-88654-9, S. 89 - 100.

    Zusätzliche Informationen

  48. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: B. Kaagström; Erik Elmroth; Jack Dongarra; J. Wasniewski

    R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr:
    "A High Performance Generic Scientific Simulation Environment";
    in: "Applied Parallel Computing, Lecture Notes in Computer Science", 4699; B. Kaagström, E. Elmroth, J. Dongarra, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2007, ISBN: 978-3-540-75754-2, S. 996 - 1005.

    Zusätzliche Informationen

  49. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
    in: "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, Vol. 1 No. 1", herausgegeben von: H.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol; ECS Transactions, Pennington, 2005, ISBN: 1-56677-430-6, S. 103 - 113.

    Zusätzliche Informationen

  50. Autor/innen: Guillermo Indalecio; Hans Kosina, E360
    Andere beteiligte Personen: Giuseppe Nicosia; Vittorio Romano

    G. Indalecio, H. Kosina:
    "Monte Carlo Simulation of Electron-Electron Interactions in Bulk Silicon";
    in: "Scientific Computing in Electrical Engineering, Mathematics in Industry", 32; G. Nicosia, V. Romano (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-44100-5, S. 125 - 131.

    Zusätzliche Informationen

  51. Autor/innen: Ben Kaczer; Tibor Grasser, E360; R. Fernandez; G. Groeseneken
    Andere beteiligte Personen: R. Sah; J. Zhang; Y. Kamakura; M. Deen; J. Yota

    B. Kaczer, T. Grasser, R. Fernandez, G. Groeseneken:
    "Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability";
    in: "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9", R. Sah, J. Zhang, Y. Kamakura, M. Deen, J. Yota (Hrg.); ECS Transactions, Pennington, 2007, (eingeladen), ISBN: 978-1-56677-552-6, S. 265 - 281.

    Zusätzliche Informationen

  52. Autor/innen: Ben Kaczer; Tibor Grasser, E360; J. Franco; M. Toledano-Luque; Ph. J. Roussel; M. Cho; E. Simoen; G. Groeseneken
    Andere beteiligte Personen: Ricardo Reis; Yu Cao; G. Wirth

    B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
    "Recent Trends in Bias Temperature Instability";
    in: "Circuit Design for Reliability", R. Reis, Y. Cao, G. Wirth (Hrg.); Springer New York, 2015, ISBN: 978-1-4614-4077-2, S. 5 - 19.

    Zusätzliche Informationen

  53. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360
    Andere beteiligte Personen: Z. Karim; D. Misra; P. Srinivasan; Y. Obeng; S. De Gendt

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices";
    in: "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3", Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (Hrg.); ECS Transactions, 2011, ISBN: 978-1-56677-864-0, S. 185 - 192.

    Zusätzliche Informationen

  54. Autor/innen: Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Wilfried Wessner, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: D. Harame; J. Boquet; M. Caymax; J. Cressler; H. Iwai; S. Koester; G. Masini; J. Murota; A. Reznicek; K. Rim; B. Tillack; S. Zaima

    G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
    "Analysis of Hole Transport in Arbitrarily Strained Germanium";
    in: "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, S. 443 - 450.

    Zusätzliche Informationen

  55. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Hans Kosina, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Karner, A. Gehring, S. Holzer, H. Kosina:
    "Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, S. 572 - 577.

    Zusätzliche Informationen

  56. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Kar; S. De Gendt; M. Houssa; D. Landheer; D. Misra; W. Tsai

    M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
    "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
    in: "Physics and Technology of High-k Gate Dielectrics III, Vol. 1 No. 5", S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-444-6, S. 693 - 703.

    Zusätzliche Informationen

  57. Autor/innen: Markus Karner, E360; Stefan Holzer, E360; Wolfgang Gös, E360; Martin Vasicek, E360; Martin Wagner, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Kar; S. De Gendt; M. Houssa; H. Iwai; D. Landheer; D. Misra

    M. Karner, S. Holzer, W. Gös, M. Vasicek, M. Wagner, H. Kosina, S. Selberherr:
    "Numerical Analysis of Gate Stacks";
    in: "Physics and Technology of High-k Gate Dielectrics 4, Vol. 3 No. 3", S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-503-5, S. 299 - 308.

    Zusätzliche Informationen

  58. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360
    Andere beteiligte Personen: Lado Filipovic, E360; Tibor Grasser, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review";
    in: "Miniaturized Transistors", L. Filipovic, T. Grasser (Hrg.); MDPI, 2019, (eingeladen), ISBN: 978-3-03921-010-7, S. 105 - 135.

    Zusätzliche Informationen

  59. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360
    Andere beteiligte Personen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donetti

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries";
    in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (Hrg.); IEEE, 2018, ISBN: 978-1-5386-4812-4, S. 177 - 180.

    Zusätzliche Informationen

  60. Autor/innen: Theresia Knobloch, E360; Gerhard Rzepa, E360; Yury Illarionov, E360; Michael Waltl, E360; Dmitry K. Polyushkin, E387-01; Andreas Pospischil, E387-01; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360
    Andere beteiligte Personen: D. Misra; S. De Gendt; M. Houssa; K. Kita; D. Landheer

    T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
    "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
    in: "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2017, (eingeladen), ISBN: 978-1-62332-470-4, S. 203 - 217.

    Zusätzliche Informationen

  61. Autor/innen: Robert Kosik, E360; Johann Cervenka, E360; Michael Thesberg, E360; Hans Kosina, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov

    R. Kosik, J. Cervenka, M. Thesberg, H. Kosina:
    "A Revised Wigner Function Approach for Stationary Quantum Transport";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 11958; I. Lirkov, S. Margenov (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-41031-5, S. 403 - 410.

    Zusätzliche Informationen

  62. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
    in: "Physics and Modeling of Tera- and Nano-Devices", World Scientific Publishing Co., Singapore, 2008, ISBN: 978-981-277-904-5, S. 31 - 40.

  63. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360
    Andere beteiligte Person: Tibor Grasser, E360

    H. Kosina, M. Nedjalkov:
    "Particle Models for Device Simulation";
    in: "Advanced Device Modeling and Simulation", T. Grasser (Hrg.); World Scientific Publishing Co., Singapore, 2003, (eingeladen), ISBN: 9-812-38607-6, S. 27 - 69.

  64. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360

    H. Kosina, M. Nedjalkov:
    "Wigner Function-Based Device Modeling";
    in: "Handbook of Theoretical and Computational Nanotechnology", herausgegeben von: Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, S. 731 - 763.

  65. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski; P. Yalamov

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (Hrg.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, S. 170 - 177.

    Zusätzliche Informationen

  66. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Margenov; J. Wasniewski; P. Yalamov

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2179; S. Margenov, J. Wasniewski, P. Yalamov (Hrg.); Springer Berlin Heidelberg, 2001, ISBN: 3-540-43043-1, S. 175 - 182.

    Zusätzliche Informationen

  67. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: H. Iwai; Y Nishida; M. Shur; H. Wong

    H. Kosina, S. Selberherr:
    "Device Simulation Demands of Upcoming Microelectronics Devices";
    in: "Frontiers in Electronics", H. Iwai, Y. Nishida, M. Shur, H. Wong (Hrg.); World Scientific Publishing Co., 2006, ISBN: 978-981-256-884-7, S. 115 - 136.

    Zusätzliche Informationen

  68. Autor/innen: Hans Kosina, E360; Karl Wimmer, E360; Claus Fischer, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: Masao Doyama

    H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
    "Simulation of ULSI Processes and Devices";
    in: "Computer Aided Innovation of New Materials", M. Doyama et al. (Hrg.); North Holland Publishing Company, 1991, (eingeladen), ISBN: 0-444-88864-0, S. 723 - 728.

  69. Autor/innen: Volodymyr Kysenko; Karl Rupp, E360; Oleksandr Marchenko; Siegfried Selberherr, E360; Anatoly Anisimov
    Andere beteiligte Personen: Gosse Bouma; Ashwin Ittoo; Elisabeth Metais; Hans Wortmann

    V. Kysenko, K. Rupp, O. Marchenko, S. Selberherr, A. Anisimov:
    "GPU-Accelerated Non-negative Matrix Factorization for Text Mining";
    in: "Natural Language Processing and Information Systems, Lecture Notes in Computer Science", 7337; G. Bouma, A. Ittoo, E. Metais, H. Wortmann (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-31177-2, S. 158 - 163.

    Zusätzliche Informationen

  70. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Hans-Joachim Bungartz; Franz Durst; Christoph Zenger

    E. Langer, S. Selberherr:
    "Advanced Models, Applications, and Software Systems for High Performance Computing-Application in Microelectronics";
    in: "High Performance Scientific and Engineering Computing, Proceedings of the International FORTWIHR Conference on HPSEC", 8; H.J. Bungartz, F. Durst, C. Zenger (Hrg.); Springer, 1999, (eingeladen), ISBN: 3-540-65730-4, S. 291 - 308.

    Zusätzliche Informationen

  71. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: R. Helbig

    E. Langer, S. Selberherr:
    "Prozeßsimulation: Stand der Technik";
    in: "Festkörperprobleme 36", R. Helbig (Hrg.); Vieweg, 1996, (eingeladen), ISBN: 3-528-08043-4, S. 203 - 243.

  72. Autor/innen: Christoph Lenz, E360; Alexander Scharinger, E360; Paul Manstetten, E360; Andreas Hössinger, E360; Josef Weinbub, E360
    Andere beteiligte Personen: Martijn van Beurden; Neil Budko; Wil Schilders

    C. Lenz, A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
    "A Novel Surface Mesh Simplification Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes";
    in: "Scientific Computing in Electrical Engineering", M. van Beurden, N. Budko, W. Schilders (Hrg.); Springer, 2021, ISBN: 978-3-030-84238-3, S. 73 - 81.

    Zusätzliche Informationen

  73. Autor/innen: Christoph Lenz, E360; Alexander Toifl, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360
    Andere beteiligte Person: Bogdan Cretu

    C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
    "Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
    in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2021, S. 1 - 4.

    Zusätzliche Informationen

  74. Autor/innen: J. Lorenz; A Asenov; Eberhard Baer; Sylvain Barraud; C. Millar; Mihail Nedjalkov, E360
    Andere beteiligte Personen: J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen; A. Yoshino

    J. Lorenz, A. Asenov, E. Baer, S. Barraud, C. Millar, M. Nedjalkov:
    "Process Variability for Devices at and Beyond the 7nm Node";
    in: "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2018, (eingeladen), ISBN: 978-1-62332-488-9, S. 113 - 124.

    Zusätzliche Informationen

  75. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: Andrzej Napieralski

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
    in: "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (Hrg.); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, S. 58 - 61.

  76. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: T. Brozek

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing";
    in: "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", T. Brozek (Hrg.); herausgegeben von: CRC Press; CRC Press, 2015, ISBN: 978-1-4822-1490-1, S. 221 - 259.

    Zusätzliche Informationen

  77. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: G Lee

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
    in: "Future Information Engineering", G. Lee (Hrg.); WITPRESS, 2014, ISBN: 978-1-84564-855-8, S. 391 - 398.

    Zusätzliche Informationen

  78. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Luryi; J. Xu; A. Zaslavsky

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory";
    in: "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (Hrg.); John Wiley & Sons, 2013, (eingeladen), ISBN: 978-1118-44216-6, S. 93 - 101.

    Zusätzliche Informationen

  79. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Dimov; Stefka Dimova; Natalia T. Kolkovska

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 6046; I. Dimov, S. Dimova, N. T. Kolkovska (Hrg.); Springer Berlin Heidelberg, 2011, ISBN: 978-3-642-18465-9, S. 87 - 94.

    Zusätzliche Informationen

  80. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations";
    in: "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, S. 1 - 4.

    Zusätzliche Informationen

  81. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "New Trends in Microelectronics: Towards an Ultimate Memory Concept";
    in: "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, S. 1 - 4.

    Zusätzliche Informationen

  82. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Sorin Cristoloveanu, IMEP; M. Shur

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
    in: "Frontiers in Electronics", S. Cristoloveanu, M. Shur (Hrg.); World Scientific Publishing Co., 2015, (eingeladen), ISBN: 978-981-4651-76-9, S. 1 - 15.

    Zusätzliche Informationen

  83. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen; A. Yoshino

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells";
    in: "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2018, ISBN: 978-1-62332-488-9, S. 213 - 218.

    Zusätzliche Informationen

  84. Autor/innen: Paul Manstetten, E360; Lado Filipovic, E360; Andreas Hössinger, E360; Josef Weinbub, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
    "Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes";
    in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (Hrg.); IEEE, 2016, ISBN: 978-1-4673-8608-1, S. 120 - 123.

    Zusätzliche Informationen

  85. Autor/innen: Paul Manstetten, E360; Lukas Gnam, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360
    Andere beteiligte Personen: Yong Shi; Haohuan Fu; Yingjie Tian; Valeria V. Krzhizhanovskaya; Michael Harold Lees; Jack Dongarra; Peter M. A. Sloot

    P. Manstetten, L. Gnam, A. Hössinger, S. Selberherr, J. Weinbub:
    "Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme";
    in: "Computational Science - ICCS 2018, Lecture Notes in Computer Science", 10860; Y. Shi, H. Fu, Y. Tian, V. Krzhizhanovskaya, M. Lees, J. Dongarra, P. Sloot (Hrg.); Springer International Publishing, 2018, ISBN: 978-3-319-93698-7, S. 694 - 707.

    Zusätzliche Informationen

  86. Autor/innen: C. Medina-Bailón; T. Sadi; Mihail Nedjalkov, E360; J. Lee; S. Berrada; H. Carillo-Nunez; V. Georgiev; Siegfried Selberherr, E360; A Asenov
    Andere beteiligte Personen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donetti

    C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
    "Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors";
    in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (Hrg.); IEEE, 2018, ISBN: 978-1-5386-4812-4, S. 17 - 20.

    Zusätzliche Informationen

  87. Autor/innen: Jan-Frederik Mennemann, E101-01; Ansgar Jüngel, E101-01; Hans Kosina, E360

    J.-F. Mennemann, A. Jüngel, H. Kosina:
    "Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator";
    in: "ASC Report 17/2012", herausgegeben von: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2012, ISBN: 978-3-902627-05-6, S. 1 - 30.

  88. Autor/in: Mihail Nedjalkov, E360
    Andere beteiligte Personen: A D´Amico; G Balestrino; A Paoletti

    M. Nedjalkov:
    "Wigner Transport in the Presence of Phonons: Particle Models of Electron Kinetics";
    in: "From Nanostructures to Nanosensing Applications", 160; A. D´Amico, G. Balestrino, A. Paoletti (Hrg.); herausgegeben von: Societa Italiana Di Fisica; IOS Press, Amsterdam, 2005, (eingeladen), ISBN: 1-58603-527-4, S. 55 - 103.

    Zusätzliche Informationen

  89. Autor/innen: Mihail Nedjalkov, E360; T.V. Gurov; Hans Kosina, E360; Dragica Vasileska; Vassil Palankovski, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
    "Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, S. 149 - 156.

    Zusätzliche Informationen

  90. Autor/innen: Mihail Nedjalkov, E360; T.V. Gurov; Hans Kosina, E360; P.A. Whitlock
    Andere beteiligte Personen: S. Margenov; J. Wasniewski; P. Yalamov

    M. Nedjalkov, T.V. Gurov, H. Kosina, P.A. Whitlock:
    "Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2179; S. Margenov, J. Wasniewski, P. Yalamov (Hrg.); Springer Berlin Heidelberg, 2001, ISBN: 978-3-540-43043-8, S. 183 - 190.

    Zusätzliche Informationen

  91. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski; P. Yalamov

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (Hrg.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, S. 178 - 184.

    Zusätzliche Informationen

  92. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Dragica Vasileska
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Nedjalkov, H. Kosina, D. Vasileska:
    "Wigner Ensemble Monte Carlo: Challenges of 2D Nano-Device Simulation";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2008, ISBN: 978-80-86407-12-8, S. 139 - 147.

    Zusätzliche Informationen

  93. Autor/innen: Mihail Nedjalkov, E360; D. Querlioz; P. Dollfus; Hans Kosina, E360
    Andere beteiligte Personen: Dragica Vasileska; S.M. Goodnick

    M. Nedjalkov, D. Querlioz, P. Dollfus, H. Kosina:
    "Wigner Function Approach";
    in: "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (Hrg.); Springer New York, 2011, (eingeladen), ISBN: 978-1-4419-8839-3, S. 289 - 358.

    Zusätzliche Informationen

  94. Autor/innen: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Oskar Baumgartner, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
    "Particle Model of the Scattering-Induced Wigner Function Correction";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 5910; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-12534-8, S. 411 - 418.

    Zusätzliche Informationen

  95. Autor/innen: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360; D.K. Ferry; Dragica Vasileska; P. Dollfus; D. Querlioz

    M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz:
    "Role of the Physical Scales on the Transport Regime";
    in: "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, S. 1 - 3.

    Zusätzliche Informationen

  96. Autor/innen: Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov
    Andere beteiligte Personen: Ivan Dimov; Stefka Dimova; Natalia T. Kolkovska

    M. Nedjalkov, S. Selberherr, I. Dimov:
    "Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 6046; I. Dimov, S. Dimova, N. T. Kolkovska (Hrg.); Springer Berlin Heidelberg, 2011, ISBN: 978-3-642-18465-9, S. 95 - 102.

    Zusätzliche Informationen

  97. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360
    Andere beteiligte Person: Bogdan Cretu

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
    in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2020, ISBN: 978-1-7281-8765-5, S. 1 - 4.

    Zusätzliche Informationen

  98. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360
    Andere beteiligte Personen: Joris Lacord; Maryline Bawedin

    R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
    in: "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", J. Lacord, M. Bawedin (Hrg.); IEEE, 2019, ISBN: 978-1-7281-1658-7, S. 1 - 4.

    Zusätzliche Informationen

  99. Autor/innen: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
    in: "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, S. 1 - 4.

    Zusätzliche Informationen

  100. Autor/innen: Dimitry Osintsev, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, S. 630 - 637.

    Zusätzliche Informationen

  101. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Neophytos Neophytou, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
    "Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
    in: "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, S. 1 - 4.

    Zusätzliche Informationen

  102. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Giovanni Russo; Vincenzo Capasso; Giuseppe Nicosia; Vittorio Romano

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Electron Momentum and Spin Relaxation in Silicon Films";
    in: "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22; G. Russo, V. Capasso, G. Nicosia, V. Romano (Hrg.); Springer International Publishing, 2016, (eingeladen), ISBN: 978-3-319-23412-0, S. 695 - 700.

    Zusätzliche Informationen

  103. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Y. Omura; Francisco Gamiz; B.-Y. Nguyen; H. Ishii; J. A. Martino; Siegfried Selberherr, E360; J.-P. Raskin

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
    in: "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2013, ISBN: 978-1-62332-027-0, S. 203 - 208.

    Zusätzliche Informationen

  104. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: A. Nazarov; B. Francis; K. Valeriya; D. Flandre

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
    in: "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (Hrg.); Springer International Publishing, 2014, ISBN: 978-3-319-08803-7, S. 127 - 149.

    Zusätzliche Informationen

  105. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic; Alexander Makarov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Y. Omura; H. Ishii; B.-Y. Nguyen; Siegfried Selberherr, E360; Francisco Gamiz; J. A. Martino; J.-P. Raskin

    D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
    "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
    in: "Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol.35, No.5", Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2011, ISBN: 978-1-56677-866-4, S. 277 - 282.

    Zusätzliche Informationen

  106. Autor/innen: Vassil Palankovski, E360; Gesualdo Donnarumma, E360; J. Kuzmik
    Andere beteiligte Personen: R. Garg; K. Shenai

    V. Palankovski, G. Donnarumma, J. Kuzmik:
    "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation";
    in: "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", R. Garg, K. Shenai (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2012, ISBN: 978-1-60768-351-3, S. 223 - 228.

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  107. Autor/innen: Vassil Palankovski, E360; J. Kuzmik
    Andere beteiligte Personen: R. Garg; K. Shenai

    V. Palankovski, J. Kuzmik:
    "A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications";
    in: "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", R. Garg, K. Shenai (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2012, ISBN: 978-1-60768-351-3, S. 291 - 296.

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  108. Autor/innen: Vassil Palankovski, E360; Martin Wagner, E360; W Heiss
    Andere beteiligte Personen: B. Murdin; Steve Clowes

    V. Palankovski, M. Wagner, W. Heiss:
    "Monte Carlo Simulation of Electron Transport in PbTe";
    in: "Narrow Gap Semiconductors 2007, Springer Proceedings in Physics", 119; B. Murdin, S. Clowes (Hrg.); Springer Netherlands, 2008, ISBN: 978-1-4020-8424-9, S. 77 - 79.

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  109. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Pourfath, H. Kosina:
    "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, Berlin / Heidelberg, 2006, ISBN: 3-540-31994-8, S. 578 - 585.

    Zusätzliche Informationen

  110. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360
    Andere beteiligte Person: H. Nalwa

    M. Pourfath, H. Kosina:
    "Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors";
    in: "Encyclopedia of Nanoscience and Nanotechnology", H. Nalwa (Hrg.); American Scientific Publishers, 2011, ISBN: 1-58883-168-x, S. 541 - 581.

  111. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Carbon Nanotube Based Transistors: A Computational Study";
    in: "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, S. 1041 - 1042.

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  112. Autor/innen: Michael Quell, E360; Georgios Diamantopoulos, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360; Josef Weinbub, E360
    Andere beteiligte Personen: Ivan Dimov; Stefka Fidanova

    M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
    "Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method";
    in: "Advances in High Performance Computing, Studies in Computational Intelligence", 902; I. Dimov, S. Fidanova (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-55347-0, S. 438 - 451.

    Zusätzliche Informationen

  113. Autor/innen: Michael Quell, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360
    Andere beteiligte Personen: Roman Wyrzykowski; Ewa Deelman; Jack Dongarra; Konrad Karczewski

    M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "Parallelized Construction of Extension Velocities for the Level-Set Method";
    in: "Parallel Processing and Applied Mathematics, Lecture Notes in Computer Science", 12043; R. Wyrzykowski, E. Deelman, J. Dongarra, K. Karczewski (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-43229-4, S. 348 - 358.

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  114. Autor/innen: Tobias Reiter, E360; Xaver Klemenschits, E360; Lado Filipovic, E360
    Andere beteiligte Person: Bogdan Cretu

    T. Reiter, X. Klemenschits, L. Filipovic:
    "Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory";
    in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2021, ISBN: 978-1-6654-3745-5, S. 1 - 4.

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  115. Autor/innen: Karl Riedling, E366; Siegfried Selberherr, E360

    K. Riedling, S. Selberherr:
    "A Publication Database for Research Documentation and Performance Evaluation";
    in: "Innovations 2007", International Network for Engineering Education and Research (iNEER), Arlington, VA, USA, 2007, ISBN: 978-0-9741252-6-8, S. 365 - 380.

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  116. Autor/innen: Jose Rodriguez; Josef Weinbub, E360; Dieter Pahr, E317-03; Karl Rupp, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: P. Manninen; P. Öster

    J. Rodriguez, J. Weinbub, D. Pahr, K. Rupp, S. Selberherr:
    "Distributed High-Performance Parallel Mesh Generation with ViennaMesh";
    in: "Applied Parallel and Scientific Computing, Lecture Notes in Computer Science", 7782; P. Manninen, P. Öster (Hrg.); Springer Berlin Heidelberg, 2013, ISBN: 978-3-642-36802-8, S. 548 - 552.

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  117. Autor/innen: Florian Rudolf, E360; Josef Weinbub, E360; Karl Rupp, E360; Peter Resutik; Andreas Morhammer, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, A. Morhammer, S. Selberherr:
    "Free Open Source Mesh Healing for TCAD Device Simulations";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, S. 293 - 300.

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  118. Autor/innen: Karl Rupp, E360; Ansgar Jüngel; Tibor Grasser, E360
    Andere beteiligte Personen: Rainer Keller; David Kramer; Jan-Philipp Weiss

    K. Rupp, A. Jüngel, T. Grasser:
    "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
    in: "Facing the Multicore - Challenge II, Lecture Notes in Computer Science", 7174; R. Keller, D. Kramer, J.-Ph. Weiss (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-30396-8, S. 147 - 157.

    Zusätzliche Informationen

  119. Autor/innen: Karl Rupp, E360; Ansgar Jüngel; Tibor Grasser, E360
    Andere beteiligte Personen: Rainer Keller; David Kramer; Jan-Philipp Weiss

    K. Rupp, A. Jüngel, T. Grasser:
    "Deterministic Numerical Solution of the Boltzmann Transport Equation";
    in: "Progress in Industrial Mathematics at ECMI 2010, Mathematics in Industry", 17; R. Keller, D. Kramer, J.-Ph. Weiss (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-25099-6, S. 53 - 59.

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  120. Autor/innen: Karl Rupp, E360; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, A. Jüngel, T. Grasser:
    "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
    in: "ASC Report 10/2010", herausgegeben von: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, S. 1 - 32.

    Zusätzliche Informationen

  121. Autor/innen: Karl Rupp, E360; Peter Willibald Lagger; Tibor Grasser, E360; Ansgar Jüngel

    K. Rupp, P. Lagger, T. Grasser, A. Jüngel:
    "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
    in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, S. 1 - 4.

    Zusätzliche Informationen

  122. Autor/innen: Stefan H. Ruscher; Josef Weinbub, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Felix Piazolo; Stephan Schlögl

    S. H. Ruscher, J. Weinbub, S. Selberherr:
    "Evaluating Software Testing Methods in an Active and Assisted Living Context";
    in: "Innovative Lösungen für eine alternde Gesellschaft", F. Piazolo, S. Schlögl (Hrg.); Pabst Science Publishers, Lengerich, Germany, 2018, ISBN: 978-3-95853-373-8, S. 68 - 76.

  123. Autor/innen: Rainer Sabelka, E360; Christian Harlander, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: J. Dabrowski; E.R. Weber

    R. Sabelka, C. Harlander, S. Selberherr:
    "Interconnects and Propagation of High Frequency Signals";
    in: "Predictive Simulation of Semiconductor Processing, Springer Series in Materials Science", 72; J. Dabrowski, E. Weber (Hrg.); Springer Berlin Heidelberg, 2004, ISBN: 3-540-20481-4, S. 357 - 385.

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  124. Autor/innen: T. Sadi; C. Medina-Bailón; Mihail Nedjalkov, E360; Jaehyun Lee; Oves Badami; Salim Berrada; Hamilton Carrillo-Nunez; Vihar Georgiev; Siegfried Selberherr, E360; Asen Asenov
    Andere beteiligte Personen: Antonio García-Loureiro; Karol Kalna; Natalie Seoane

    T. Sadi, C. Medina-Bailón, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carrillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
    "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors";
    in: "Nanowire Field-Effect Transistor (FET)", A. García-Loureiro, K. Kalna, N. Seoane (Hrg.); MDPI, Basel, 2019, ISBN: 978-3-03936-208-0, S. 41 - 51.

    Zusätzliche Informationen

  125. Autor/innen: Franz Schanovsky, E360; Tibor Grasser, E360
    Andere beteiligte Person: Tibor Grasser, E360

    F. Schanovsky, T. Grasser:
    "On the Microscopic Limit of the RD Model";
    in: "Bias Temperature Instability for Devices and Circuits", T. Grasser (Hrg.); Springer New York, 2013, ISBN: 978-1-4614-7909-3, S. 379 - 408.

    Zusätzliche Informationen

  126. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov
    Andere beteiligte Personen: K. K. Sabelfeld; Ivan Dimov

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Monte Carlo Investigations of Electron Decoherence due to Phonons";
    in: "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (Hrg.); De Gruyter, 2012, ISBN: 978-3-11-029347-0, S. 203 - 211.

  127. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations";
    in: "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, S. 1 - 3.

    Zusätzliche Informationen

  128. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Phonon-Induced Decoherence in Electron Evolution";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, S. 472 - 479.

    Zusätzliche Informationen

  129. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; J. M. Sellier; Ivan Dimov; R. Georgieva
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    P. Schwaha, M. Nedjalkov, S. Selberherr, J. M. Sellier, I. Dimov, R. Georgieva:
    "Stochastic Formulation of Newton's Acceleration";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 8353; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2014, ISBN: 978-3-662-43879-4, S. 178 - 185.

    Zusätzliche Informationen

  130. Autor/in: Siegfried Selberherr, E360
    Andere beteiligte Person: W.L. Engl

    S. Selberherr:
    "On Modeling MOS-Devices";
    in: "Process and Device Modeling", W.L. Engl (Hrg.); North Holland Publishing Company, 1986, (eingeladen), ISBN: 0-444-87891-2, S. 265 - 299.

  131. Autor/innen: Siegfried Selberherr, E360; Claus Fischer, E360; Stefan Halama, E360; Christoph Pichler, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360
    Andere beteiligte Person: A.S. Machado

    S. Selberherr, C. Fischer, S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger:
    "Device Structures and Device Simulation Techniques";
    in: "Low-Power HF Microelectronics", A.S. Machado (Hrg.); The Institution of Electrical Engineers, 1996, (eingeladen), ISBN: 0-85296-874-4, S. 57 - 83.

    Zusätzliche Informationen

  132. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366
    Andere beteiligte Personen: P. Antognetti; D. Antoniadis; R.W. Dutton; W.G. Oldham

    S. Selberherr, A. Schütz, H. Pötzl:
    "Two-Dimensional MOS-Transistor Modeling";
    in: "Process and Device Simulation for MOS-VLSI Circuits", P. Antognetti, D. Antoniadis, R.W. Dutton, W.G. Oldham (Hrg.); Martinus Nijhoff, 1983, (eingeladen), ISBN: 90-247-2824-x, S. 490 - 581.

  133. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "The Role of Annihilation in a Wigner Monte Carlo Approach";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 8353; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2014, ISBN: 978-3-662-43879-4, S. 186 - 193.

    Zusätzliche Informationen

  134. Autor/innen: Ambika Shah, E360; Amirhossein Moshrefi; Michael Waltl, E360
    Andere beteiligte Personen: Anirban Sengupta; Sudeb Dasgupta; Virendra Singh; Rohit Sharma; Santosh Kumar Vishvakarma

    A. Shah, A. Moshrefi, M. Waltl:
    "Utilizing NBTI for Operation Detection of Integrated Circuits";
    in: "VLSI Design and Test, Communications in Computer and Information Science", 1066; A. Sengupta, S. Dasgupta, V. Singh, R. Sharma, S. Vishvakarma (Hrg.); Springer Singapore, 2019, ISBN: 978-981-32-9767-8, S. 190 - 201.

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  135. Autor/innen: Vito Simonka, E360; Georg Nawratil, E104-03; Andreas Hössinger, E360; Josef Weinbub, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
    "Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations";
    in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (Hrg.); IEEE, 2016, ISBN: 978-1-4673-8608-1, S. 226 - 229.

    Zusätzliche Informationen

  136. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski; P. Yalamov

    S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (Hrg.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, S. 185 - 193.

    Zusätzliche Informationen

  137. Autor/innen: Michael Spevak, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: B. Kaagström; Erik Elmroth; J. Jackson; J. Wasniewski

    M. Spevak, R. Heinzl, P. Schwaha, S. Selberherr:
    "A Computational Framework for Topological Operations";
    in: "Applied Parallel Computing, Lecture Notes in Computer Science", 4699; B. Kaagström, E. Elmroth, J. Jackson, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2007, ISBN: 978-3-540-75754-2, S. 781 - 790.

    Zusätzliche Informationen

  138. Autor/innen: Bernhard Stampfer, E360; Alexander Grill, E360; Michael Waltl, E360
    Andere beteiligte Person: Tibor Grasser, E360

    B. Stampfer, A. Grill, M. Waltl:
    "Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals";
    in: "Noise in Nanoscale Semiconductor Devices", T. Grasser (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, S. 229 - 257.

    Zusätzliche Informationen

  139. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360; A. Zaitsev; I. Baranov
    Andere beteiligte Person: C. Vasile Muller

    A. Starkov, O. Pakhomov, I. Starkov, A. Zaitsev, I. Baranov:
    "Principles of Solid-State Cooler on Layered Multiferroics";
    in: "5th International Conference on Magnetic Refrigeration at Room Temperature", C. V. Muller (Hrg.); Institut International Du Froid, 2012, ISBN: 978-2-91314-994-6, S. 573 - 581.

  140. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Luryi; J. Xu; A. Zaslavsky

    V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
    in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (Hrg.); John Wiley & Sons, 2010, (eingeladen), ISBN: 978-0-470-55137-0, S. 281 - 291.

    Zusätzliche Informationen

  141. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: Andrzej Napieralski

    V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
    "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k·p Study";
    in: "Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (Hrg.); IEEE, 2020, ISBN: 978-83-63578-17-6, S. 168 - 171.

    Zusätzliche Informationen

  142. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Siegfried Selberherr, E360; Hans Kosina, E360
    Andere beteiligte Person: Bogdan Cretu

    V. Sverdlov, A.-M. El-Sayed, S. Selberherr, H. Kosina:
    "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel";
    in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2020, ISBN: 978-1-7281-8765-5, S. 1 - 4.

    Zusätzliche Informationen

  143. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Y. B. Senichenkov; V. Korablev; Igor Chernorytski; N. Korovkin; S. Pozdnjkov; Klimis Ntalianis

    V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
    "Modeling Silicon Spintronics";
    in: "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (Hrg.); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, S. 195 - 198.

  144. Autor/innen: Viktor Sverdlov, E360; Yusuf Kinkhabwala; Daniel Kaplan; Alexander N Korotkov; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr:
    "Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays";
    in: "Unsolved Problems of Noise and Fluctuations", herausgegeben von: New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, S. 177 - 182.

  145. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
    "Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
    in: "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, S. 1395 - 1396.

    Zusätzliche Informationen

  146. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Ch. Ringhofer; Mihail Nedjalkov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
    "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, S. 594 - 601.

    Zusätzliche Informationen

  147. Autor/innen: Viktor Sverdlov, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: Andrzej Napieralski

    V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
    "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
    in: "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (Hrg.); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, S. 30 - 33.

  148. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donetti

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM";
    in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (Hrg.); IEEE, 2018, ISBN: 978-1-5386-4812-4, S. 161 - 164.

    Zusätzliche Informationen

  149. Autor/innen: Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Juin J. Liou; Shien-Kuei Liaw; Yung-Hui Chung

    V. Sverdlov, D. Osintsev, S. Selberherr:
    "Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
    in: "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (Hrg.); De Gruyter, 2016, (eingeladen), ISBN: 978-1-5015-1050-2, S. 29 - 48.

    Zusätzliche Informationen

  150. Autor/innen: Viktor Sverdlov, E360; Heribert Seiler, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360
    Andere beteiligte Person: Bogdan Cretu

    V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
    "Conductance due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
    in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (Hrg.); IEEE, 2021, ISBN: 978-1-6654-3745-5, S. 1 - 4.

    Zusätzliche Informationen

  151. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov

    V. Sverdlov, S. Selberherr:
    "A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 11958; I. Lirkov, S. Margenov (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-41031-5, S. 446 - 453.

    Zusätzliche Informationen

  152. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donetti

    V. Sverdlov, S. Selberherr:
    "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions";
    in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (Hrg.); IEEE, 2018, ISBN: 978-1-5386-4812-4, S. 33 - 36.

    Zusätzliche Informationen

  153. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
    in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (Hrg.); IEEE, 2016, ISBN: 978-1-4673-8608-1, S. 202 - 205.

    Zusätzliche Informationen

  154. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    V. Sverdlov, S. Selberherr:
    "Spin-Based CMOS-Compatible Devices";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, (eingeladen), ISBN: 978-3-319-26519-3, S. 42 - 49.

    Zusätzliche Informationen

  155. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Y. Omura; J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen

    V. Sverdlov, S. Selberherr:
    "Spin-Based Silicon and CMOS-Compatible Devices";
    in: "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2015, (eingeladen), ISBN: 978-1-62332-238-0, S. 223 - 231.

    Zusätzliche Informationen

  156. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360
    Andere beteiligte Personen: Steve Hall; A. Nazarov; Vladimir Lysenko

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
    in: "Nanoscaled Semiconductor-on-Insulator Structures and Devices", S. Hall, A. Nazarov, V. Lysenko (Hrg.); Springer Netherlands, 2007, ISBN: 978-1-4020-6378-7, S. 357 - 362.

    Zusätzliche Informationen

  157. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2008, ISBN: 978-80-86407-12-8, S. 157 - 164.

    Zusätzliche Informationen

  158. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2007, ISBN: 978-3-540-78825-6, S. 157 - 164.

    Zusätzliche Informationen

  159. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou; Hans Kosina, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, S. 301 - 308.

    Zusätzliche Informationen

  160. Autor/innen: Oliver Triebl, E360; Tibor Grasser, E360
    Andere beteiligte Personen: Wladek Grabinski; Thomas Gneiting

    O. Triebl, T. Grasser:
    "Numerical Power/HV Device Modeling";
    in: "Power/HV MOS Devices Compact Modeling", W. Grabinski, T. Gneiting (Hrg.); Springer Netherlands, 2010, (eingeladen), ISBN: 978-90-481-3045-0, S. 1 - 32.

    Zusätzliche Informationen

  161. Autor/in: S. E. Tyaginov, E360
    Andere beteiligte Person: Tibor Grasser, E360

    S. E. Tyaginov:
    "Physics-Based Modeling of Hot-Carrier Degradation";
    in: "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, S. 105 - 150.

    Zusätzliche Informationen

  162. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; H. Enichlmair; J.M. Park; C. Jungemann; Tibor Grasser, E360
    Andere beteiligte Person: R. Sah

    S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
    "Physics-Based Hot-Carrier Degradation Models";
    in: "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (Hrg.); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, S. 321 - 352.

    Zusätzliche Informationen

  163. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: D. Harame; J. Boquet; M. Caymax; J. Cressler; H. Iwai; S. Koester; G. Masini; J. Murota; A. Reznicek; K. Rim; B. Tillack; S. Zaima

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
    in: "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, S. 45 - 54.

    Zusätzliche Informationen

  164. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations";
    in: "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, S. 1389 - 1390.

    Zusätzliche Informationen

  165. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: J. A. Diniz; P. French; N. Morimoto; J. W. Swart; D. De Lima Monteiro

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling of Advanced Semiconductor Devices";
    in: "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, (eingeladen), ISBN: 1-56677-512-4, S. 207 - 216.

    Zusätzliche Informationen

  166. Autor/innen: Martin Vasicek, E360; D. Esseni; C. Fiegna; Tibor Grasser, E360

    M. Vasicek, D. Esseni, C. Fiegna, T. Grasser:
    "Modeling and Simulation Approaches for Drain Current Computation";
    in: "Nanoscale CMOS: Innovative Materials, Modeling and Characterization", herausgegeben von: F. Balestra; Wiley, London, 2010, (eingeladen), ISBN: 978-1-84821-180-3, S. 259 - 285.

  167. Autor/innen: Martin Vasicek, E360; Viktor Sverdlov, E360; Johann Cervenka, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
    "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 5910; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-12534-8, S. 443 - 450.

    Zusätzliche Informationen

  168. Autor/innen: Stanislav Vitanov, E360; Mihail Nedjalkov, E360; Vassil Palankovski, E360
    Andere beteiligte Personen: Todor Boyanov; Stefka Dimova; Krassimir Georgiev; Geno Nikolov

    S. Vitanov, M. Nedjalkov, V. Palankovski:
    "A Monte Carlo Model of Piezoelectric Scattering in GaN";
    in: "Numerical Methods and Applications, Lecture Notes in Computer Science", 4310; T. Boyanov, S. Dimova, K. Georgiev, G. Nikolov (Hrg.); Springer-Verlag, Berlin-Heidelberg, 2007, ISBN: 978-3-540-70940-4, S. 197 - 204.

    Zusätzliche Informationen

  169. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360
    Andere beteiligte Personen: B. Murdin; Steve Clowes

    S. Vitanov, V. Palankovski:
    "Monte Carlo Study of Transport Properties of InN";
    in: "Narrow Gap Semiconductors 2007, Springer Proceedings in Physics", 119; B. Murdin, S. Clowes (Hrg.); Springer Netherlands, 2008, ISBN: 13978-1-4020-8424-9, S. 97 - 100.

    Zusätzliche Informationen

  170. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; Rüdiger Quay; Erasmus Langer, E360

    S. Vitanov, V. Palankovski, R. Quay, E. Langer:
    "Modeling of Electron Transport in GaN-Based Materials and Devices";
    in: "AIP Conference Proceedings, Vol. 893", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, S. 1399 - 1400.

  171. Autor/innen: Martin Wagner, E360; Gerhard Span; Stefan Holzer, E360; Vassil Palankovski, E360; Oliver Triebl, E360; Tibor Grasser, E360

    M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser:
    "Power Output Improvement of Silicon-Germanium Thermoelectric Generators";
    in: "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, S. 1151 - 1162.

    Zusätzliche Informationen

  172. Autor/innen: Dominic Waldhör, E360; Al-Moatasem El-Sayed, E360; Yannick Wimmer, E360; Michael Waltl, E360; Tibor Grasser, E360
    Andere beteiligte Person: Tibor Grasser, E360

    D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser:
    "Atomistic Modeling of Oxide Defects";
    in: "Noise in Nanoscale Semiconductor Devices", T. Grasser (Hrg.); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, S. 609 - 648.

    Zusätzliche Informationen

  173. Autor/innen: Michael Waltl, E360; Yoanlys Hernandez, E360; Christian Schleich, E360; Katja Anna Waschneck; Bernhard Stampfer, E360; H. Reisinger; Tibor Grasser, E360
    Andere beteiligte Personen: Jean Francois Michaud; Luong Viet Phung; Daniel Alquier; Dominique Planson

    M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser:
    "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models";
    in: "Silicon Carbide and Related Materials 2021", J. Michaud, L. Phung, D. Alquier, D. Planson (Hrg.); Trans Tech Publications Ltd , Switzerland, 2022, ISBN: 9783035727609, S. 688 - 695.

    Zusätzliche Informationen

  174. Autor/innen: L. Wang; T. Sadi; A.R. Brown; Mihail Nedjalkov, E360; Craig Alexander; B. Cheng; C. Millar; A Asenov
    Andere beteiligte Personen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    L. Wang, T. Sadi, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs";
    in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (Hrg.); IEEE, 2016, ISBN: 978-1-4673-8608-1, S. 56 - 59.

    Zusätzliche Informationen

  175. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Luryi; J. Xu; A. Zaslavsky

    C. Wasshuber, H. Kosina, S. Selberherr:
    "Single-Electron Memories with Terabit Capacity and Beyond";
    in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (Hrg.); John Wiley & Sons, 1999, (eingeladen), ISBN: 0-471-32183-4, S. 313 - 322.

  176. Autor/innen: Josef Weinbub, E360; Paul Ellinghaus, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    J. Weinbub, P. Ellinghaus, S. Selberherr:
    "Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, S. 309 - 316.

    Zusätzliche Informationen

  177. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Lado Filipovic, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
    "Towards a Free Open Source Process and Device Simulation Framework";
    in: "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, S. 1 - 4.

    Zusätzliche Informationen

  178. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Gi-Chul Yang; Sio-Long Ao; Len Gelman

    J. Weinbub, K. Rupp, S. Selberherr:
    "A Flexible Dynamic Data Structure for Scientific Computing";
    in: "IAENG Transactions on Engineering Technologies, Lecture Notes in Electrical Engineering", 229; G.-C. Yang, S.-L. Ao, L. Gelman (Hrg.); Springer, 2013, (eingeladen), ISBN: 978-94-007-6189-6, S. 565 - 577.

    Zusätzliche Informationen

  179. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: P. Manninen; P. Öster

    J. Weinbub, K. Rupp, S. Selberherr:
    "A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing";
    in: "Applied Parallel and Scientific Computing, Lecture Notes in Computer Science", 7782; P. Manninen, P. Öster (Hrg.); Springer Berlin Heidelberg, 2013, ISBN: 978-3-642-36802-8, S. 563 - 566.

    Zusätzliche Informationen

  180. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ivan Lirkov; S. Margenov; J. Wasniewski

    J. Weinbub, K. Rupp, S. Selberherr:
    "Towards Distributed Heterogenous High-Performance Computing with ViennaCL";
    in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116; I. Lirkov, S. Margenov, J. Wasniewski (Hrg.); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, S. 359 - 367.

    Zusätzliche Informationen

  181. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
    in: "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, S. 1 - 4.

    Zusätzliche Informationen

  182. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Hiwa Mahmoudi, E354-02; B. Gunnar Malm; Mattias Ekström; Mikael Östling
    Andere beteiligte Personen: Santosh K. Kurinec; Sumeet Walia

    T. Windbacher, A. Makarov, S. Selberherr, H. Mahmoudi, B.G. Malm, M. Ekström, M. Östling:
    "The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing";
    in: "Energy Efficient Computing & Electronics: Devices to Systems; Devices, Circuits, and Systems Series", S.K. Kurinec, S. Walia (Hrg.); CRC Press, 2019, (eingeladen), ISBN: 978-1-138-71036-8, S. 93 - 156.

    Zusätzliche Informationen

  183. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: S. Luryi; J. Xu; A. Zaslavsky

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "A Universal Nonvolatile Processing Environment";
    in: "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (Hrg.); John Wiley & Sons, 2016, (eingeladen), ISBN: 978-1-119-06911-9, S. 83 - 91.

    Zusätzliche Informationen

  184. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Fred Roozeboom; Vijay Narayanan; Kuniyuki Kakushima; P.J. Timans; E.P. Gusev; Z. Karim; Stefan DeGendt

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Buffered Magnetic Logic Gate Grid";
    in: "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5, Vol. 66, No. 4", F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2015, ISBN: 978-1-62332-237-3, S. 295 - 303.

    Zusätzliche Informationen

  185. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Ana Fred; J. Filipe; Hugo Gamboa

    T. Windbacher, V. Sverdlov, S. Selberherr:
    "Biotin-Streptavidin Sensitive BioFETs and Their Properties";
    in: "Biomedical Engineering Systems and Technologies, Communications in Computer and Information Scienc", 52; A. Fred, J. Filipe, H. Gamboa (Hrg.); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-11720-6, S. 85 - 95.

    Zusätzliche Informationen

  186. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Dragica Vasileska; S.M. Goodnick

    T. Windbacher, V. Sverdlov, S. Selberherr:
    "Classical Device Modeling";
    in: "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (Hrg.); Springer New York, 2011, (eingeladen), ISBN: 978-1-4419-8839-3, S. 1 - 96.

    Zusätzliche Informationen

  187. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, S. Selberherr:
    "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
    in: "SiGe: Materials, Processing, and Devices", herausgegeben von: The Electrochemical Society; ECS Transactions, 2004, ISBN: 1-56677-420-9, S. 181 - 192.

  188. Autor/innen: Robert Wittmann, E360; S Uppal; Andreas Hössinger, E360; Johann Cervenka, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: D. Harame; J. Boquet; M. Caymax; J. Cressler; H. Iwai; S. Koester; G. Masini; J. Murota; A. Reznicek; K. Rim; B. Tillack; S. Zaima

    R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
    "A Study of Boron Implantation into High Ge Content SiGe Alloys";
    in: "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Hrg.); herausgegeben von: The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, S. 667 - 676.

    Zusätzliche Informationen


Beiträge in Tagungsbänden


  1. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Towards Understanding Negative Bias Temperature Instability";
    in: "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", IEEE Conference Proceedings, 2008, S. 145.

    Zusätzliche Informationen

  2. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360
    Andere beteiligte Person: G Lee

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
    in: "Future Information Engineering", G. Lee (Hrg.); WITPRESS, 1, 2014, ISBN: 978-1-84564-855-8, S. 391 - 398.

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  3. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
    in: "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)", IEEE, 2015, S. 50 - 53.

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  4. Autor/innen: L. Wang; T. Sadi; Mihail Nedjalkov, E360; A.R. Brown; Craig Alexander; B. Cheng; C. Millar; A Asenov

    L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device";
    in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", IEEE, 2015, ISBN: 978-0-692-51523-5.

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  5. Autor/innen: Josef Weinbub, E360; Florian Dang; Tor Gillberg; Siegfried Selberherr, E360

    J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
    "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
    in: "Proceedings of the High Performance Computing Symposium (HPC)", ACM, 2015, ISBN: 978-1-5108-0101-1, S. 217 - 224.

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Editorials in Tagungsbänden


  1. Autor/innen: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donet

    F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet:
    "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
    in: "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS", IEEE Xplore, 2018, ISBN: 978-1-5386-4811-7, S. 1 - 2.

  2. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360; Francisco Gamiz; Sorin Cristoloveanu, IMEP

    V. Sverdlov, S. Selberherr, F. Gamiz, S. Cristoloveanu:
    "Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)";
    in: "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8609-8, S. 1.

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Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag)


  1. Autor/innen: W. Agler; Peter A. Markowich; Siegfried Selberherr, E360

    W. Agler, P. Markowich, S. Selberherr:
    "A Singular Perturbation Analysis of Discretisation Methods for the Parabolic Semiconductor Device Equations";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 85 - 90.

  2. Autor/innen: Luiz Felipe Aguinsky, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description";
    Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 109 - 110.

  3. Autor/innen: Luiz Felipe Aguinsky, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching";
    Vortrag: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 21.07.2019 - 24.07.2019; in: "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), S. 109.

  4. Autor/innen: Luiz Felipe Aguinsky, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "Three-Dimensional TCAD for Atomic Layer Processing";
    Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 5.

  5. Autor/innen: Luiz Felipe Aguinsky, E360; Francio Rodrigues, E360; Xaver Klemenschits, E360; Lado Filipovic, E360; Andreas Hössinger, E360; Josef Weinbub, E360

    L.F. Aguinsky, F. Rodrigues, X. Klemenschits, L. Filipovic, A. Hössinger, J. Weinbub:
    "Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 40 - 41.

  6. Autor/innen: Luiz Felipe Aguinsky, E360; Georg Wachter, E141-02; Alexander Scharinger, E360; Francio Rodrigues, E360; Alexander Toifl, E360; Michael Trupke, E141-02; Ulrich Schmid, E366-02; Andreas Hössinger, E360; Josef Weinbub, E360

    L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
    "Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 54 - 55.

  7. Autor/innen: T. Aichinger; P. M. Lenahan; Tibor Grasser, E360; G. Pobegen; M. Nelhiebel

    T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel:
    "Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study";
    Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  8. Autor/innen: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "On the Temperature Dependence of NBTI Recovery";
    Vortrag: International Reliability Physics Symposium (IRPS), Montreal (eingeladen); 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 1.

  9. Autor/innen: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes";
    Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 2 - 7.

  10. Autor/innen: T. Aichinger; S. Puchner; M. Nelhiebel; Tibor Grasser, E360; H. Hutter

    T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter:
    "Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1063 - 1068.

  11. Autor/innen: Elaf Al-Ani, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
    "Three-Dimensional State-Of-The-Art Topography Simulation";
    Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 430 - 432.

  12. Autor/innen: Giulliano Rocco Aloise, E360; Stanislav Vitanov, E360; Vassil Palankovski, E360

    G. R. Aloise, S. Vitanov, V. Palankovski:
    "Performance Study of Nitride-Based Gunn Diodes";
    Vortrag: Nanotech 2011, Boston, USA; 13.06.2011 - 16.06.2011; in: "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3; 4 S.

  13. Autor/innen: Giulliano Rocco Aloise, E360; Stanislav Vitanov, E360; Vassil Palankovski, E360

    G. R. Aloise, S. Vitanov, V. Palankovski:
    "Temperature Dependence of the Transport Properties of InN";
    Vortrag: Microtherm 2011, Lodz, Poland; 28.06.2011 - 01.07.2011; in: "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4; 6 S.

  14. Autor/innen: S. M. Amoroso; L. Gerrer; A Asenov; J. M. Sellier; Ivan Dimov; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    S. Amoroso, L. Gerrer, A. Asenov, J. M. Sellier, I. Dimov, M. Nedjalkov, S. Selberherr:
    "Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 25 - 28.

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  15. Autor/innen: George Angelov; Vassil Palankovski, E360; Marin Hristov

    G. Angelov, V. Palankovski, M. Hristov:
    "Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
    Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts", ÖVE-Schriftenreihe, 39 (2005), ISBN: 3-85133036-6; S. 110 - 111.

  16. Autor/innen: George Angelov; Vassil Palankovski, E360; Marin Hristov; Philipp Philippov

    G. Angelov, V. Palankovski, M. Hristov, P. Philippov:
    "Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
    Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4; S. 486 - 491.

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  17. Autor/innen: J. Ashworth; Philipp Lindorfer, E360

    J. Ashworth, P. Lindorfer:
    "Analysis of the Breakdown Phenomena in GaAs MESFET's";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 241 - 244.

  18. Autor/innen: J. Ashworth; Philipp Lindorfer, E360

    J. Ashworth, P. Lindorfer:
    "Analysis of the Breakdown Phenomena in GaAs MESFET's";
    Vortrag: Gallium Arsenide and Related Compounds Conference, Jersey; 1990; in: "Proceedings GaAs and Related Compounds", (1990).

  19. Autor/innen: Tesfaye Ayalew, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
    "Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
    Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 92 - 93.

    Zusätzliche Informationen

  20. Autor/innen: Tesfaye Ayalew, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
    "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 295 - 298.

    Zusätzliche Informationen

  21. Autor/innen: Tesfaye Ayalew, E360; S-W. Kim; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
    "SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
    Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 476 - 477.

    Zusätzliche Informationen

  22. Autor/innen: Tesfaye Ayalew, E360; Jong Mun Park, E360; Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
    "Modeling and Simulation of SiC MOSFETs";
    Vortrag: International Conference on Applied Modelling and Simulation, Marbella; 03.09.2003 - 05.09.2003; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; S. 552 - 556.

  23. Autor/innen: Tesfaye Ayalew, E360; Jong Mun Park, E360; Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
    "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
    Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 581 - 584.

  24. Autor/innen: Tesfaye Ayalew, E360; Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
    "Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
    Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 76 - 77.

    Zusätzliche Informationen

  25. Autor/innen: Fuad Badrieh; Helmut Puchner, E360; Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Siegfried Selberherr, E360

    F. Badrieh, H. Puchner, C. Heitzinger, A. Sheikholeslami, S. Selberherr:
    "From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process";
    Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 441 - 444.

  26. Autor/innen: Eberhard Baer; P. Evanschitzky; J. Lorenz; Frederic Roger; R. Minixhofer; Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
    "Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
    Vortrag: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 02.03.2014 - 05.03.2014; in: "Book of Abstracts", (2014), 2 S.

  27. Autor/innen: Alireza R. Baghai-Wadji, E363; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A. R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "On the Calculation of Charge, Electrostatic Potential and Capacitance in Generalized SAW Structures";
    Vortrag: Ultrasonics Symposium, Dallas; 14.11.1984 - 16.11.1984; in: "Abstracts of the Ultrasonics Symposium", (1984), S. 44 - 48.

  28. Autor/innen: Alireza R. Baghai-Wadji, E363; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A. R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Rigorous 3D Electrostatic Field Analysis of SAW Transducers with Closed-Form Formulae";
    Vortrag: Ultrasonics Symposium, Williamsburg; 17.11.1986 - 19.11.1986; in: "Proceedings of the Ultrasonics Symposium", (1986), S. 23 - 28.

  29. Autor/innen: Alireza R. Baghai-Wadji, E366-02; Oswald Männer; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, O. Männer, S. Selberherr, F. Seifert:
    "Analysis and Measurement of Transducer End Radiation in SAW Filters on Strongly Coupling Substrates";
    Vortrag: Forum Europeen Temps-Frequence, Besancon; 18.03.1987 - 20.03.1987; in: "Proceedings of the 1er Forum Europeen Temps-Frequence", (1987), S. 315 - 319.

  30. Autor/innen: Alireza R. Baghai-Wadji, E366-02; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media";
    Vortrag: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1986), S. 39.

  31. Autor/innen: Alireza R. Baghai-Wadji, E366-02; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media";
    Vortrag: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1986), S. 109 - 120.

  32. Autor/innen: Alireza R. Baghai-Wadji, E366-02; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation";
    Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 138 - 145.

  33. Autor/innen: Alireza R. Baghai-Wadji, E366-02; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation";
    Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 146 - 153.

  34. Autor/innen: Alireza R. Baghai-Wadji, E366-01; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation";
    Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 21 - 22.

  35. Autor/innen: Alireza R. Baghai-Wadji, E366-02; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation";
    Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 23 - 24.

  36. Autor/innen: Mauro Ballicchia, E360; Majid Benam, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Josef Weinbub, E360

    M. Ballicchia, M. Benam, M. Nedjalkov, S. Selberherr, J. Weinbub:
    "Modeling Coulomb Interaction with a 'Wigner-Poisson' Coupling Scheme";
    Vortrag: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7; S. 64 - 65.

  37. Autor/innen: Mauro Ballicchia, E360; D.K. Ferry; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub:
    "Linking Wigner Function Negativity to Quantum Coherence in a Nanowire";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 59 - 60.

  38. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, S. Selberherr, J. Weinbub:
    "Potentials for Single Electron State Processing";
    Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 111 - 112.

  39. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "Effects of Repulsive Dopants on Quantum Transport in a Nanowire";
    Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 115 - 116.

  40. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "Electromagnetic Control of Electron Interference";
    Poster: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich; 06.07.2022 - 08.07.2022; in: "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), S. 15.

    Zusätzliche Informationen

  41. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach";
    Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 24 - 25.

  42. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "Single Electron Control by a Uniform Magnetic Field in a Focusing Double-Well Potential Structure";
    Vortrag: IEEE International Conference on Nanotechnology (NANO), Montreal, Canada - virtual; 29.07.2020 - 31.07.2020; in: "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2020), ISBN: 978-1-7281-8264-3; S. 73 - 76.

    Zusätzliche Informationen

  43. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "Wigner Dynamics of Electron Quantum Superposition States in a Confined and Opened Quantum Dot";
    Vortrag: 22nd IEEE International Conference on Nanotechnology, Palma de Mallorca, Sapin; 04.07.2022 - 08.07.2022; in: "2022 IEEE 22nd International Conference on Nanotechnology (NANO)", (2022), S. 565 - 568.

    Zusätzliche Informationen

  44. Autor/innen: Mauro Ballicchia, E360; Josef Weinbub, E360; Ivan Dimov; Mihail Nedjalkov, E360

    M. Ballicchia, J. Weinbub, I. Dimov, M. Nedjalkov:
    "Recent Advances of the Wigner Signed-Particle Approach";
    Vortrag: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria (eingeladen); 18.12.2018 - 20.12.2018; in: "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357; S. 18 - 19.

  45. Autor/innen: Mauro Ballicchia, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    M. Ballicchia, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "Classical and Quantum Electron Evolution with a Repulsive Dopant";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 105 - 106.

  46. Autor/innen: Robert Bauer, E360; Siegfried Selberherr, E360

    R. Bauer, S. Selberherr:
    "Calculating Coupling Capacitances of Three-Dimensional Interconnections";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 697 - 699.

  47. Autor/innen: Robert Bauer, E360; Siegfried Selberherr, E360

    R. Bauer, S. Selberherr:
    "Preconditioned CG-Solvers and Finite Element Grids";
    Vortrag: Colorado Conference on Iterative Methods, Breckenridge; 05.04.1994 - 09.04.1994; in: "Proceedings Colorado Conference on Iterative Methods", Vol.2 (1994), S. 1 - 5.

  48. Autor/innen: Robert Bauer, E360; Martin Stiftinger, E360; Siegfried Selberherr, E360

    R. Bauer, M. Stiftinger, S. Selberherr:
    "Capacitance Calculation of VLSI Multilevel Wiring Structures";
    Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 142 - 143.

  49. Autor/innen: Oskar Baumgartner, E360; Markus Bina; Wolfgang Gös, E360; Franz Schanovsky, E360; M. Toledano-Luque; Ben Kaczer; Hans Kosina, E360; Tibor Grasser, E360

    O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
    "Direct Tunneling and Gate Current Fluctuations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 17 - 20.

    Zusätzliche Informationen

  50. Autor/innen: Oskar Baumgartner, E360; Lidija Filipovic, E360; Hans Kosina, E360; M Karner; Zlatan Stanojevic; Hui Wen Cheng-Karner

    O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, Z. Stanojevic, H. W. Cheng-Karner:
    "Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 202 - 205.

    Zusätzliche Informationen

  51. Autor/innen: Oskar Baumgartner, E360; Markus Karner, E360; Stefan Holzer, E360; Mahdi Pourfath, E360; Tibor Grasser, E360; Hans Kosina, E360

    O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina:
    "Adaptive Energy Integration of Non-Equilibrium Green´s Functions";
    Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 19.05.2007 - 24.05.2007; in: "NSTI Nanotech Proceedings", 3 (2007), ISBN: 1-4200-6184-4; S. 145 - 148.

  52. Autor/innen: Oskar Baumgartner, E360; Markus Karner, E360; Hans Kosina, E360

    O. Baumgartner, M. Karner, H. Kosina:
    "Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 353 - 356.

    Zusätzliche Informationen

  53. Autor/innen: Oskar Baumgartner, E360; Markus Karner, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
    Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 53 - 56.

    Zusätzliche Informationen

  54. Autor/innen: Oskar Baumgartner, E360; Markus Karner, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in: "EUROSOI 2009 Conference Proceedings", (2009), S. 57 - 58.

  55. Autor/innen: Oskar Baumgartner, E360; Philipp Schwaha, E360; Markus Karner, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr:
    "Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 345 - 348.

    Zusätzliche Informationen

  56. Autor/innen: Oskar Baumgartner, E360; Zlatan Stanojevic; Lidija Filipovic, E360; Alexander Grill; Tibor Grasser, E360; Hans Kosina, E360; Markus Karner, E360

    O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner:
    "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 117 - 120.

    Zusätzliche Informationen

  57. Autor/innen: Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360

    O. Baumgartner, Z. Stanojevic, H. Kosina:
    "Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 91 - 94.

    Zusätzliche Informationen

  58. Autor/innen: Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360

    O. Baumgartner, Z. Stanojevic, H. Kosina:
    "Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 86 - 87.

  59. Autor/innen: Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360

    O. Baumgartner, Z. Stanojevic, H. Kosina:
    "Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 21.

  60. Autor/innen: Oskar Baumgartner, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
    "Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 25.01.2010 - 27.01.2010; in: "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), S. 91 - 92.

  61. Autor/innen: Majid Benam, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    M. Benam, M. Nedjalkov, S. Selberherr:
    "A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach";
    Vortrag: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in: "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), S. 34 - 35.

  62. Autor/innen: Majid Benam, E360; Maciej Wołoszyn; Siegfried Selberherr, E360

    M. Benam, M. Wołoszyn, S. Selberherr:
    "Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach";
    Vortrag: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; 18.12.2018 - 20.12.2018; in: "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357; S. 20 - 21.

  63. Autor/innen: Mario Bendra, E360-01; Johannes Ender, E360; Simone Fiorentini, E360; Tomás Hadámek, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Finite Element Method Approach to MRAM Modeling";
    Vortrag: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 27.09.2021 - 01.10.2021; in: "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1; S. 70 - 73.

    Zusätzliche Informationen

  64. Autor/innen: Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, E360; Wilton Jaciel Loch, E360-01; Nils Petter Jørstad, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360

    M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
    "Interface Effects in Ultra-Scaled MRAM Cells";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 18.05.2022 - 20.05.2022; in: "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022).

    Zusätzliche Informationen

  65. Autor/innen: Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, E360; Wilton Jaciel Loch, E360-01; Nils Petter Jørstad, E360-01; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin Transfer Torques in Ultra-Scaled MRAM Cells";
    Vortrag: MIPRO 2022, Opatija, Croatia; 23.05.2022 - 27.05.2022; in: "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5; S. 129 - 132.

    Zusätzliche Informationen

  66. Autor/innen: W Benger; G Ritter; Rene Heinzl, E360

    W. Benger, G. Ritter, R. Heinzl:
    "The Concepts of VISH";
    Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 28 - 41.

  67. Autor/innen: Judith Berens; M. Weger; Gregor Pobegen; T. Aichinger; Gerald Rescher; Christian Schleich, E360; Tibor Grasser, E360

    J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser:
    "Similarities and Differences of BTI in SiC and Si Power MOSFETs";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 29.03.2020 - 02.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6.

    Zusätzliche Informationen

  68. Autor/innen: Markus Bina; T. Aichinger; G. Pobegen; Wolfgang Gös, E360; Tibor Grasser, E360

    M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser:
    "Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model";
    Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 27 - 31.

  69. Autor/innen: Markus Bina; Karl Rupp, E360; S. E. Tyaginov, E360; Oliver Triebl, E360; Tibor Grasser, E360

    M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser:
    "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), S. 713 - 716.

    Zusätzliche Informationen

  70. Autor/innen: Markus Bina; Oliver Triebl, E360; Benedikt Schwarz, E362; Markus Karner, E360; Ben Kaczer; Tibor Grasser, E360

    M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser:
    "Simulation of Reliability on Nanoscale Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 109 - 112.

  71. Autor/innen: Thomas Binder, E360; Hajdin Ceric, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
    "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 183 - 186.

    Zusätzliche Informationen

  72. Autor/innen: Thomas Binder, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Binder, C. Heitzinger, S. Selberherr:
    "A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 466 - 469.

  73. Autor/innen: Thomas Binder, E360; Siegfried Selberherr, E360

    T. Binder, S. Selberherr:
    "A Parallel Finite Oct-Tree for Multi-Threaded Insert, Delete, and Search Operations";
    Vortrag: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; S. 613 - 616.

  74. Autor/innen: Thomas Binder, E360; Siegfried Selberherr, E360

    T. Binder, S. Selberherr:
    "Object-Oriented Design Patterns for Process Flow Simulations";
    Vortrag: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; S. 159 - 166.

  75. Autor/innen: Thomas Binder, E360; Siegfried Selberherr, E360

    T. Binder, S. Selberherr:
    "Object-Oriented Wafer-State Services";
    Vortrag: European Simulation Multiconference (ESM), Ghent; 23.05.2000 - 26.05.2000; in: "Proceedings European Simulation Multiconference ESM 2000", (2000), ISBN: 1-56555-204-0; S. 360 - 364.

  76. Autor/innen: B. Bindu; Wolfgang Gös, E360; Ben Kaczer; Tibor Grasser, E360

    B. Bindu, W. Gös, B. Kaczer, T. Grasser:
    "Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress";
    Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 93 - 96.

  77. Autor/innen: Josip Bobinac, E360; Tobias Reiter, E360; Julius Piso, E360; Xaver Klemenschits, E360; O Baumgartner, Global TCAD Solu ...; Zlatan Stanojevic, E360; G Strof, Global TCAD Solu ...; M Karner; Lado Filipovic, E360

    J. Bobinac, T. Reiter, J. Piso, X. Klemenschits, O. Baumgartner, Z. Stanojevic, G. Strof, M. Karner, L. Filipovic:
    "Impact of Mask Tapering on SF6/O2 Plasma Etching";
    Vortrag: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in: "Microelectronic Devices and Technologies: Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT '2022)", (2022), ISBN: 978-84-09-43856-3; S. 90 - 94.

    Zusätzliche Informationen

  78. Autor/innen: Walter Bohmayr, E360; A. Burenkov; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
    "Monte Carlo Simulation of Silicon Amorphization During Ion Implantation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 17 - 18.

    Zusätzliche Informationen

  79. Autor/innen: Walter Bohmayr, E360; A. Burenkov; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
    "Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 492 - 495.

    Zusätzliche Informationen

  80. Autor/innen: Walter Bohmayr, E360; Siegfried Selberherr, E360

    W. Bohmayr, S. Selberherr:
    "Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen";
    Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; S. 63 - 66.

  81. Autor/innen: Walter Bohmayr, E360; Siegfried Selberherr, E360

    W. Bohmayr, S. Selberherr:
    "Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 304 - 306.

  82. Autor/innen: Walter Bohmayr, E360; Siegfried Selberherr, E360

    W. Bohmayr, S. Selberherr:
    "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners";
    Vortrag: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipei; 31.05.1995 - 02.06.1995; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1995), ISBN: 0-7803-2773-x; S. 104 - 107.

  83. Autor/innen: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Electrothermal Analysis of Latch-Up in an IGT";
    Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 116 - 117.

  84. Autor/innen: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Modeling and Simulation of Electrothermal Effects in Power Semiconductor Devices";
    Vortrag: International Conference on Numerical Methods in Thermal Problems, Swansea; 12.07.1993 - 16.07.1993; in: "Proceedings International Conference on Numerical Methods in Thermal Problems", (1993), ISBN: 0-906674-80-8; S. 1553 - 1564.

  85. Autor/innen: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Two Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 129 - 134.

  86. Autor/innen: Helmut Brech; T. Grave; Thomas Simlinger, E360; Siegfried Selberherr, E360

    H. Brech, T. Grave, T. Simlinger, S. Selberherr:
    "Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance";
    Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 12.10.1997 - 15.10.1997; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3; S. 66 - 69.

    Zusätzliche Informationen

  87. Autor/innen: Helmut Brech; T. Grave; A. Werthof; H.J. Siveris; Thomas Simlinger, E360; Siegfried Selberherr, E360

    H. Brech, T. Grave, A. Werthof, H. Siveris, T. Simlinger, S. Selberherr:
    "Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics";
    Vortrag: International Symposium on Compound Semiconductors (ISCS), San Diego; 08.09.1997 - 11.09.1997; in: "Abstracts Intl. Symposium on Compound Semiconductors", (1997), S. ThA6.

  88. Autor/innen: Helmut Brech; Thomas Simlinger, E360; T. Grave; Siegfried Selberherr, E360

    H. Brech, T. Simlinger, T. Grave, S. Selberherr:
    "Current Transport in Double Heterojunction HEMTs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 873 - 876.

  89. Autor/innen: Helmut Brech; Thomas Simlinger, E360; T. Grave; Siegfried Selberherr, E360

    H. Brech, T. Simlinger, T. Grave, S. Selberherr:
    "Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs";
    Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 25.05.1997 - 28.05.1997; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), S. 1 - 2.

  90. Autor/innen: Helmut Brech; Thomas Simlinger, E360; T. Grave; Siegfried Selberherr, E360

    H. Brech, T. Simlinger, T. Grave, S. Selberherr:
    "Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT";
    Vortrag: III-V Semiconductor Device Simulation Workshop, Eindhoven; 09.05.1996 - 10.05.1996; in: "Proceedings Ninth III-V Semiconductor Device Simulation Workshop", (1996), S. 1 - 3.

  91. Autor/innen: Matthias Budil, E366; E. Guerrero; Thomas Brabec, E387-01; Siegfried Selberherr, E360; Hans Pötzl, E366

    M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl:
    "A New Model for Determination of Point Defect Equilibrium Concentration in Silicon";
    Vortrag: International Workshop on Numerical Modelling of Semiconductors (NUMOS), Los Angeles; 11.12.1986 - 12.12.1986; in: "Proceedings of the International Workshop on Numerical Modelling of Semiconductors", (1986), S. 37 - 44.

  92. Autor/innen: Matthias Budil, E366; Werner Jüngling, E360; E. Guerrero; Siegfried Selberherr, E360; Hans Pötzl, E366

    M. Budil, W. Jüngling, E. Guerrero, S. Selberherr, H. Pötzl:
    "Modeling of Point Defect Kinetics During Thermal Oxidation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 384 - 397.

  93. Autor/innen: W. Bürger; M. Faber; Michael Hackel, E360; H. Markum; M. Müller

    W. Bürger, M. Faber, M. Hackel, H. Markum, M. Müller:
    "Inhomogeneous Universes from Lattice QCD with Dynamical Quarks";
    Vortrag: International Symposium on Nuclear Astrophysics, Karlsruhe; 06.07.1992 - 10.07.1992; in: "Proceedings of the International Symposium on Nuclear Astrophysics", (1992), S. 441 - 446.

  94. Autor/innen: W. Bürger; M. Faber; Michael Hackel, E360; H. Markum; M. Müller

    W. Bürger, M. Faber, M. Hackel, H. Markum, M. Müller:
    "Surface Energy and Chiral Interface of a Coexisting Quark-Hadron System";
    Vortrag: Particle Production in Highly Exited Matter Conference, Il Ciocco; 12.07.1992 - 24.07.1992; in: "Proceedings of Particle Production in Highly Exited Matter Conference", (1992), S. 239 - 241.

  95. Autor/innen: Muhammad Faiz Bukhori; Tibor Grasser, E360; Ben Kaczer; H. Reisinger; A Asenov

    M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov:
    "'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 76 - 79.

    Zusätzliche Informationen

  96. Autor/innen: A. Burenkov; Walter Bohmayr, E360; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, S. Selberherr:
    "Analytical Model for Phosphorus Large Angle Tilted Implantation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 488 - 491.

    Zusätzliche Informationen

  97. Autor/innen: A. Burenkov; K. Tietzel; Andreas Hössinger, E360; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
    "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 55 - 58.

    Zusätzliche Informationen

  98. Autor/innen: E. Bury; R. Degraeve; M. Cho; Ben Kaczer; Wolfgang Gös, E360; Tibor Grasser, E360; N. Horiguchi; G. Groeseneken

    E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Gös, T. Grasser, N. Horiguchi, G. Groeseneken:
    "Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Devices";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9; S. 254 - 257.

  99. Autor/innen: Hajdin Ceric, E360; Johann Cervenka, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    H. Ceric, J. Cervenka, E. Langer, S. Selberherr:
    "Moving Boundary Applications in Process and Interconnect TCAD";
    Vortrag: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 13.08.2006 - 19.08.2006; in: "Proceedings Mini-Workshop on Anisotropic Motion Laws", Report No.38/2006 (2006), S. 13 - 16.

  100. Autor/innen: Hajdin Ceric, E360; V Deshpande; Christian Hollauer, E360; Stefan Holzer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr:
    "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 27.06.2005 - 01.07.2005; in: "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5; S. 100 - 103.

  101. Autor/innen: Hajdin Ceric, E360; Andreas Hössinger, E360; Thomas Binder, E360; Siegfried Selberherr, E360

    H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
    "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; S. 139 - 145.

  102. Autor/innen: Hajdin Ceric, E360; Christian Hollauer, E360; Siegfried Selberherr, E360

    H. Ceric, Ch. Hollauer, S. Selberherr:
    "Microstructure and Stress Aspects of Electromigration Modeling";
    Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 12.09.2005 - 14.09.2005; in: "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), S. P 17.

  103. Autor/innen: Hajdin Ceric, E360; Christian Hollauer, E360; Siegfried Selberherr, E360

    H. Ceric, Ch. Hollauer, S. Selberherr:
    "Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9; S. 359 - 363.

  104. Autor/innen: Hajdin Ceric, E360; Christian Hollauer, E360; Siegfried Selberherr, E360

    H. Ceric, Ch. Hollauer, S. Selberherr:
    "Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 192 - 195.

    Zusätzliche Informationen

  105. Autor/innen: Hajdin Ceric, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    H. Ceric, E. Langer, S. Selberherr:
    "Modeling of Residual Stresses in Thin Metal Films";
    Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 04.04.2007 - 06.04.2007; in: "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), S. 18.

  106. Autor/innen: Hajdin Ceric, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    H. Ceric, E. Langer, S. Selberherr:
    "Three-Phase Model for the Volmer-Weber Crystal Growth";
    Vortrag: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 20.02.2007 - 23.02.2007; in: "Nanostructures and Carrier Interactions", (2007), S. 127.

  107. Autor/innen: Hajdin Ceric, E360; Alexandre Nentchev, E360; Erasmus Langer, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    H. Ceric, A. Nentchev, E. Langer, S. Selberherr:
    "Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 37 - 40.

    Zusätzliche Informationen

  108. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "Analysis of Microstructure Impact on Electromigration";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 241 - 244.

    Zusätzliche Informationen

  109. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 178 - 181.

    Zusätzliche Informationen

  110. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "Stress-Induced Anisotropy of Electromigration in Copper Interconnects";
    Vortrag: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 05.11.2008 - 07.11.2008; in: "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3; S. 56 - 62.

  111. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "TCAD Solutions for Submicron Copper Interconnect";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; S. 78 - 81.

  112. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "The Effect of Microstructure on Electromigration Induced Voids";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6; S. 694 - 697.

  113. Autor/innen: Hajdin Ceric, E360; Roberto Orio; Marco Rovitto, E360

    H. Ceric, R. Orio, M. Rovitto:
    "TCAD Approach for the Assessment of Interconnect Reliability";
    Vortrag: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany (eingeladen); 30.05.2016 - 01.06.2016; in: "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), S. T21.

  114. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Franz Schanovsky, E360; Wolfhard Zisser, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr:
    "Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 135 - 138.

    Zusätzliche Informationen

  115. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Analysis of Solder Bump Electromigration Reliability";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 713 - 716.

    Zusätzliche Informationen

  116. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Atomistic Method for Analysis of Electromigration";
    Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 04.06.2012 - 06.06.2012; in: "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3; 3 S.

  117. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms";
    Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 11.05.2008 - 14.05.2008; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2008), ISBN: 978-1-4244-1881-7; S. 69 - 76.

    Zusätzliche Informationen

  118. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 167 - 170.

  119. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Electromigration Degradation of Gold Interconnects: A Statistical Study";
    Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, California,; 27.06.2022 - 30.06.2022; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), S. 102 - 104.

    Zusätzliche Informationen

  120. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics";
    Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Milan, Italy; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 301 - 303.

    Zusätzliche Informationen

  121. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Impact of Parameter Variability on Electromigration Lifetime Distribution";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 217 - 220.

    Zusätzliche Informationen

  122. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Integration of Atomistic and Continuum-Level Electromigration Models";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 04.07.2011 - 07.07.2011; in: "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7; 4 S.

    Zusätzliche Informationen

  123. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Interconnect Reliability Dependence on Fast Diffusivity Paths";
    Vortrag: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (eingeladen); 26.06.2011 - 01.07.2011; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), S. 33.

  124. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Microstructural Impact on Electromigration Reliability of Gold Interconnects";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 178 - 179.

  125. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 264 - 267.

  126. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Anderson P. Singulani, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
    "3D Technology Interconnect Reliability TCAD";
    Vortrag: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 11.02.2014 - 13.02.2014; in: "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6; S. 1 - 8.

  127. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Wolfhard Zisser, E360; V. Schnitzer; Siegfried Selberherr, E360

    H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr:
    "Modeling of Microstructural Effects on Electromigration Failure";
    Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan (eingeladen); 28.05.2012 - 30.05.2012; in: "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), S. 50 - 51.

  128. Autor/innen: Hajdin Ceric, E360; Roberto Orio, E360; Wolfhard Zisser, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
    "Ab Initio Method for Electromigration Analysis";
    Vortrag: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0; 4 S.

    Zusätzliche Informationen

  129. Autor/innen: Hajdin Ceric, E360; Marco Rovitto, E360

    H. Ceric, M. Rovitto:
    "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 194 - 197.

    Zusätzliche Informationen

  130. Autor/innen: Hajdin Ceric, E360; Rainer Sabelka, E360; Stefan Holzer, E360; Wilfried Wessner, E360; Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
    "The Evolution of the Resistance and Current Density During Electromigration";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 331 - 334.

    Zusätzliche Informationen

  131. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 253 - 256.

    Zusätzliche Informationen

  132. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Compact Model for Solder Bump Electromigration Failure";
    Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 18.05.2015 - 21.05.2015; in: "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5; S. 159 - 161.

    Zusätzliche Informationen

  133. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration in Interconnect Structures of Microelectronic Circuits";
    Vortrag: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija (eingeladen); 21.05.2007 - 25.05.2007; in: "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8; S. 23 - 28.

  134. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 08.07.2002 - 12.07.2002; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9; S. 140 - 144.

  135. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration Induced Failure of Solder Bumps and the Role of IMC";
    Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 20.05.2014 - 23.05.2014; in: "Proceedings of the International Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1; S. 265 - 267.

    Zusätzliche Informationen

  136. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration Modeling for Interconnect Structures in Microelectronics";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro (eingeladen); 03.09.2007 - 06.09.2007; in: "ECS Transactions", (2007), ISBN: 978-1-56677-565-6; S. 295 - 304.

  137. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration Reliability of Solder Bumps";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 336 - 339.

    Zusätzliche Informationen

  138. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360; Houman Zahedmanesh; Roberto Orio, E360; Kristof Croes

    H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
    "Assessment of Electromigration in Nano‐Interconnects";
    Vortrag: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA (eingeladen); 04.11.2019 - 06.11.2019; in: "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), S. 7.

  139. Autor/innen: Hajdin Ceric, E360; Anderson P. Singulani, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
    "Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 166 - 169.

    Zusätzliche Informationen

  140. Autor/innen: Hajdin Ceric, E360; Anderson P. Singulani, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
    "Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 73 - 76.

    Zusätzliche Informationen

  141. Autor/innen: Hajdin Ceric, E360; Houman Zahedmanesh

    H. Ceric, H. Zahedmanesh:
    "Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability";
    Poster: IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium; 03.06.2019 - 06.06.2019; in: "Proceedings of the International Interconnect Technology Conference (IITC)", (2019).

  142. Autor/innen: Hajdin Ceric, E360; Wolfhard Zisser, E360; Marco Rovitto, E360; Siegfried Selberherr, E360

    H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr:
    "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 221 - 224.

    Zusätzliche Informationen

  143. Autor/innen: Hajdin Ceric, E360; Wolfhard Zisser, E360; Siegfried Selberherr, E360

    H. Ceric, W. H. Zisser, S. Selberherr:
    "Quantum Mechanical Calculations of Electromigration Characteristics";
    Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA (eingeladen); 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 21.

  144. Autor/innen: Johann Cervenka, E360; Hajdin Ceric, E360; Otmar Ertl, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    J. Cervenka, H. Ceric, O. Ertl, S. Selberherr:
    "Three-Dimensional Sacrificial Etching";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 433 - 436.

    Zusätzliche Informationen

  145. Autor/innen: Johann Cervenka, E360; Paul Ellinghaus, E360

    J. Cervenka, P. Ellinghaus:
    "Preconditioned Deterministic Solver for the Wigner Equation";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 31.

  146. Autor/innen: Johann Cervenka, E360; Paul Ellinghaus, E360; Mihail Nedjalkov, E360

    J. Cervenka, P. Ellinghaus, M. Nedjalkov:
    "Deterministic Solution of the Discrete Wigner Equation";
    Vortrag: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in: "Eighth International Conference on Numerical Methods and Applications", (2014), S. 36.

  147. Autor/innen: Johann Cervenka, E360; Lado Filipovic, E360

    J. Cervenka, L. Filipovic:
    "Numerical Aspects of the Deterministic Solution of the Wigner Equation";
    Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 42 - 43.

  148. Autor/innen: Johann Cervenka, E360; Peter Fleischmann, E360; Siegfried Selberherr, E360; Martin Knaipp, E360; F. Unterleitner

    J. Cervenka, P. Fleischmann, S. Selberherr, M. Knaipp, F. Unterleitner:
    "Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; S. 227 - 230.

  149. Autor/innen: Johann Cervenka, E360; Andreas Hössinger, E360; R. Minixhofer; Tibor Grasser, E360; Siegfried Selberherr, E360

    J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
    "Dreidimensionale Modellierung Elektronischer Bauteile";
    Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 377 - 382.

  150. Autor/innen: Johann Cervenka, E360; Martin Knaipp, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr:
    "Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 408 - 411.

    Zusätzliche Informationen

  151. Autor/innen: Johann Cervenka, E360; Hans Kosina, E360; Siegfried Selberherr, E360; J. Zhang; N. Hrauda; J Stangl; G. Bauer; G. Vastola; A. Marzegalli; L. Miglio

    J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio:
    "Strained MOSFETs on Ordered SiGe Dots";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; S. 297 - 300.

  152. Autor/innen: Johann Cervenka, E360; Alexander Steinmair; Jong Mun Park, E360; E. Seebacher; Tibor Grasser, E360

    J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser:
    "TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors";
    Vortrag: European Workshop on CMOS Variability, Nice, France; 11.06.2012 - 12.06.2012; in: "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3; 4 S.

  153. Autor/innen: Johann Cervenka, E360; Josef Weinbub, E360

    J. Cervenka, J. Weinbub:
    "Superposed States and the Wigner Approach";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 50.

  154. Autor/innen: A Chasin; J. Franco; Ben Kaczer; Vamsi Putcha; P. Weckx; Romain Ritzenthaler; H. Mertens; N. Horiguchi; D Linten; Gerhard Rzepa, E360

    A. Chasin, J. Franco, B. Kaczer, V. Putcha, P. Weckx, R. Ritzenthaler, H. Mertens, N. Horiguchi, D. Linten, G. Rzepa:
    "BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors";
    Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 5C-4.1 - 5C-4.7.

  155. Autor/innen: Raffaele Alberto Coppeta, E360; Hajdin Ceric, E360; David Holec, E308-01; Tibor Grasser, E360

    R. Coppeta, H. Ceric, D. Holec, T. Grasser:
    "Critical thickness for GaN thin film on AlN substrate";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 133 - 136.

  156. Autor/innen: Raffaele Alberto Coppeta, E360; Hajdin Ceric, E360; B. Karunamurthy; Tibor Grasser, E360

    R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
    "Epitaxial Volmer-Weber Growth Modelling";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 45 - 48.

    Zusätzliche Informationen

  157. Autor/innen: Lukas Cvitkovich, E360-01; Markus Jech, E360; Dominic Waldhör, E360; Al-Moatasem El-Sayed, E360; Christoph Wilhelmer, E360-01; Tibor Grasser, E360

    L. Cvitkovich, M. Jech, D. Waldhör, A.-M. El-Sayed, C. Wilhelmer, T. Grasser:
    "Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 235 - 238.

    Zusätzliche Informationen

  158. Autor/innen: Lukas Cvitkovich, E360-01; Dominic Waldhör, E360; Al-Moatasem El-Sayed, E360; Markus Jech, E360; Christoph Wilhelmer, E360-01; Tibor Grasser, E360

    L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser:
    "Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation";
    Poster: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 209.

  159. Autor/innen: A. I. Dedyk; Yu. V. Pavlova; Alexander Semenov; Oleg Pakhomov; Alexander Starkov; Ivan Starkov, E360; P. Yu. Beliavskiy

    A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy:
    "The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures";
    Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 S.

    Zusätzliche Informationen

  160. Autor/innen: Antonina Dedyk; Yulia Pavlova; O. V. Pakhomov; A. S. Starkov; Ivan Starkov, E360; Alexander Semenov; Sergey Karmanenko

    A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko:
    "Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors";
    Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 28.06.2010 - 30.06.2010; in: "Book of Abstracts WoDiM 2010", (2010), S. 93.

  161. Autor/innen: Harald Demel; Zlatan Stanojevic; Markus Karner, E360; Gerhard Rzepa, E360; Tibor Grasser, E360

    H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser:
    "Expanding TCAD Simulations from Grid to Cloud";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 186 - 189.

    Zusätzliche Informationen

  162. Autor/innen: Johannes Demel; Siegfried Selberherr, E360

    J. Demel, S. Selberherr:
    "JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen";
    Vortrag: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in: "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3; S. 149 - 153.

    Zusätzliche Informationen

  163. Autor/innen: Johannes Demel; Siegfried Selberherr, E360

    J. Demel, S. Selberherr:
    "The Complete Tableau Approach to Simulate VLSI-Networks";
    Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 27 - 29.

  164. Autor/innen: R. Deutschmann; Claus Fischer, E360; C. Sala; Siegfried Selberherr, E360

    R. Deutschmann, C. Fischer, C. Sala, S. Selberherr:
    "Comparison between Measured and Simulated Device Characteristics of High Electron Mobility Transistors";
    Vortrag: Gallium Arsenide Simulation Group Meeting, Harrogate; 22.04.1993 - 23.04.1993; in: "Abstracts of the 7th GaAs Simulation Group Meeting", (1993), S. 1 - 2.

  165. Autor/innen: R. Deutschmann; Claus Fischer, E360; C. Sala; Siegfried Selberherr, E360

    R. Deutschmann, C. Fischer, C. Sala, S. Selberherr:
    "Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 461 - 464.

    Zusätzliche Informationen

  166. Autor/innen: R. Deutschmann; Claus Fischer, E360; Thomas Simlinger, E360; Christian Köpf, E360; Siegfried Selberherr, E360

    R. Deutschmann, C. Fischer, T. Simlinger, C. Köpf, S. Selberherr:
    "Two-Dimensional Hydrodynamic Simulation of Heterostructure Devices";
    Vortrag: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in: "Proceedings 8th GaAs Simulation Workshop", (1994).

  167. Autor/innen: R. Deutschmann; C. Sala; Claus Fischer, E360; Siegfried Selberherr, E360

    R. Deutschmann, C. Sala, C. Fischer, S. Selberherr:
    "Measurement and Simulation of the C-V Characteristics of High Electron Mobility Transistors";
    Vortrag: General Conference of the Condensed Matter Division of the European Physical Society, Regensburg; 29.03.1993 - 02.04.1993; in: "Abstracts of the 13th General Conference of the Condensed Matter Division European Physical Society", 17A (1993), S. 1457.

  168. Autor/innen: Siddhartha Dhar, E360; Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina:
    "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 223 - 226.

    Zusätzliche Informationen

  169. Autor/innen: Siddhartha Dhar, E360; Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr:
    "Modeling of Velocity-Field Characteristics in Strained Silicon";
    Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-947-7; S. 1060 - 1063.

  170. Autor/innen: Siddhartha Dhar, E360; Hans Kosina, E360; Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
    "A Tensorial High-Field Electron Mobility Model for Strained Silicon";
    Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; S. 72 - 73.

  171. Autor/innen: Siddhartha Dhar, E360; Hans Kosina, E360; Vassil Palankovski, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
    "A Physically-Based Electron Mobility Model for Strained Si Devices";
    Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 13 - 16.

  172. Autor/innen: Siddhartha Dhar, E360; Hans Kosina, E360; Vassil Palankovski, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
    "Modeling of Electron Mobility in Strained Si Devices";
    Vortrag: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 25.11.2004 - 26.11.2004; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; S. 793 - 796.

    Zusätzliche Informationen

  173. Autor/innen: Siddhartha Dhar, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
    "Analytical Modeling of Electron Mobility in Strained Germanium";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 39 - 42.

    Zusätzliche Informationen

  174. Autor/innen: Siddhartha Dhar, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
    "Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
    Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 153 - 154.

  175. Autor/innen: Siddhartha Dhar, E360; Stephan Enzo Ungersböck, E360; Mihail Nedjalkov, E360; Vassil Palankovski, E360

    S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski:
    "Monte Carlo Simulation of the Electron Mobility in Strained Silicon";
    Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; S. 169 - 173.

  176. Autor/innen: Georgios Diamantopoulos, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
    "A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing";
    Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 03.06.2018 - 08.06.2018; in: "Proc. 6th European Seminar on Computing", (2018), 1 S.

  177. Autor/innen: Georgios Diamantopoulos, E360; Paul Manstetten, E360; Lukas Gnam, E360; Vito Simonka, E360; Luiz Felipe Aguinsky, E360; Michael Quell, E360; Alexander Toifl, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub:
    "Recent Advances in High Performance Process TCAD";
    Vortrag: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 25.02.2019 - 01.03.2019; in: "CSE19 Abstracts", (2019), S. 335.

  178. Autor/innen: Georgios Diamantopoulos, E360; Josef Weinbub, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360

    G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr:
    "Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems";
    Vortrag: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 03.07.2017 - 06.07.2017; in: "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4; S. 1 - 8.

    Zusätzliche Informationen

  179. Autor/innen: Peter Dickinger, E360; Philipp Lindorfer, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    P. Dickinger, P. Lindorfer, G. Nanz, S. Selberherr:
    "Connection of Network and Device Simulation";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in: "NUPAD III Techn. Digest", (1990), S. 73 - 74.

  180. Autor/innen: Peter Dickinger, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    P. Dickinger, G. Nanz, S. Selberherr:
    "Measurement and Simulation of Degradation Effects in High Voltage DMOS Devices";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 369 - 372.

  181. Autor/innen: Peter Dickinger, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    P. Dickinger, G. Nanz, S. Selberherr:
    "On-Resistance and Breakdown in Resurf Devices";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 437 - 442.

  182. Autor/innen: Peter Dickinger, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    P. Dickinger, G. Nanz, S. Selberherr:
    "Self-Consistent Simulation of Heat Generation and Conduction in Semiconductor Devices";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), S. 157 - 160.

  183. Autor/innen: Peter Dickinger, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    P. Dickinger, G. Nanz, S. Selberherr:
    "Two-Dimensional Simulation of a Bipolar Dynamic Memory Cell";
    Vortrag: Conference on Modelling, Simulation and Control (MSC), Istanbul; 29.06.1989 - 01.07.1989; in: "Proceedings AMSE Conf. Modelling, Simulation and Control", 22 (1989), S. 33 - 38.

  184. Autor/innen: Ivan Dimov; Mihail Nedjalkov, E360; J. M. Sellier; Siegfried Selberherr, E360

    I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
    "Neumann Series Analysis of the Wigner Equation Solution";
    Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 459.

  185. Autor/innen: Gesualdo Donnarumma, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    G. Donnarumma, V. Palankovski, S. Selberherr:
    "Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 125 - 128.

  186. Autor/innen: Klaus Dragosits, E360; R. Hagenbeck; Siegfried Selberherr, E360

    K. Dragosits, R. Hagenbeck, S. Selberherr:
    "Transient Simulation of Ferroelectric Hysteresis";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 433 - 436.

  187. Autor/innen: Klaus Dragosits, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    K. Dragosits, M. Knaipp, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Memory Cells";
    Vortrag: International Conference on Electronic Materials, Cheju; 24.08.1998 - 27.08.1998; in: "Abstracts Intl. Conf. on Electronic Materials", (1998), S. 40.

  188. Autor/innen: Klaus Dragosits, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    K. Dragosits, M. Knaipp, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 368 - 371.

    Zusätzliche Informationen

  189. Autor/innen: Klaus Dragosits, E360; Robert Kosik, E360; Siegfried Selberherr, E360

    K. Dragosits, R. Kosik, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Materials";
    Vortrag: International Symposium on Integrated Ferroelectrics (ISIF), Aachen; 12.03.2000 - 15.03.2000; in: "Abstracts Intl. Symposium on Integrated Ferroelectrics", (2000), S. 128.

  190. Autor/innen: Klaus Dragosits, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    K. Dragosits, V. Palankovski, S. Selberherr:
    "Mobility Modeling in Presence of Quantum Effects";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 271 - 274.

    Zusätzliche Informationen

  191. Autor/innen: Klaus Dragosits, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    K. Dragosits, V. Palankovski, S. Selberherr:
    "Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices";
    Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 113 - 116.

  192. Autor/innen: Klaus Dragosits, E360; Y. Ponomarev; C. Dachs; Siegfried Selberherr, E360

    K. Dragosits, Y. Ponomarev, C. Dachs, S. Selberherr:
    "Analysis of Ultra Short MOSFETs with High-K Gate Dielectrics";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 412 - 415.

    Zusätzliche Informationen

  193. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 309 - 312.

  194. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Simulation of Ferroelectric Materials with MINIMOS-NT";
    Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in: "Abstracts MRS Spring Meeting", (2000), S. 249.

  195. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT";
    Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; S. 81 - 82.

  196. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT";
    Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, (2000), ISBN: 3-932434-15-3; S. 1023 - 1026.

  197. Autor/innen: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Simulation of Ferroelectric Thin Films";
    Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), S. 179.

  198. Autor/innen: Al-Moatasem El-Sayed, E360; Heribert Seiler, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr, V. Sverdlov:
    "Ab-initio Calculations of Edge States in Topological 1T′ MoS<sub>2</sub> Nanoribbons";
    Vortrag: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 79 - 80.

  199. Autor/innen: Al-Moatasem El-Sayed, E360; Heribert Seiler, E360; Hans Kosina, E360; Viktor Sverdlov, E360

    A.-M. El-Sayed, H. Seiler, H. Kosina, V. Sverdlov:
    "First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 113 - 114.

  200. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Efficient Calculation of the Two-Dimensional Wigner Potential";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 19 - 20.

  201. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Implications of the Coherence Length on the Discrete Wigner Potential";
    Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 155 - 156.

  202. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 24 - 27.

    Zusätzliche Informationen

  203. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 93 - 94.

  204. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5; 4 S.

    Zusätzliche Informationen

  205. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
    Vortrag: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in: "Eighth International Conference on Numerical Methods and Applications", (2014), S. 19.

  206. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "The Influence of Electrostatic Lenses on Wave Packet Dynamics";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 39 - 40.

  207. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 113 - 116.

    Zusätzliche Informationen

  208. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
    "Wigner Analysis of Surface Roughness in Quantum Wires";
    Vortrag: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 40 - 41.

  209. Autor/innen: Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
    "Wigner Modelling of Quantum Wires";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 2.

  210. Autor/innen: Paul Ellinghaus, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "ViennaWD - Applications";
    Vortrag: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015; in: "Booklet of the International Wigner Workshop (IW2)", (2015), S. 9.

  211. Autor/innen: Paul Ellinghaus, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "Wigner Modelling of Surface Roughness in Quantum Wires";
    Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 171 - 172.

  212. Autor/innen: Johannes Ender, E360; Simone Fiorentini, E360; Roberto Orio, E360; Tomás Hadámek, E360; Mario Bendra, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
    "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches";
    Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (eingeladen); 04.10.2021 - 08.10.2021; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8.

  213. Autor/innen: Johannes Ender, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual) (eingeladen); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 45 - 46.

  214. Autor/innen: Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360; Wolfgang Goes, Silvaco; Roberto Orio, E360; Siegfried Selberherr, E360

    J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
    "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
    Vortrag: SPIE Spintronics, San Diego, CA, USA - virtual (eingeladen); 01.08.2021 - 05.08.2021; in: "Proceedings of SPIE Spintronics", (2021), S. 11805-53.

  215. Autor/innen: Johannes Ender, E360; Mohamed Mohamedou, E360-01; Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 213 - 216.

    Zusätzliche Informationen

  216. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Gös, E360; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov:
    "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 04.10.2021 - 07.10.2021; in: "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714; S. 1 - 4.

    Zusätzliche Informationen

  217. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 150 - 154.

    Zusätzliche Informationen

  218. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 15.09.2021 - 15.10.2021; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6.

    Zusätzliche Informationen

  219. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Viktor Sverdlov, E360

    J. Ender, R. Orio, V. Sverdlov:
    "Enhancing SOT-MRAM Switching Using Machine Learning";
    Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 14.10.2021; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), S. 1.

  220. Autor/innen: Robert Entner, E360; Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Entner, A. Gehring, T. Grasser, S. Selberherr:
    "A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
    Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 114 - 117.

    Zusätzliche Informationen

  221. Autor/innen: Robert Entner, E360; Andreas Gehring, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
    "Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices";
    Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 45 - 48.

  222. Autor/innen: Robert Entner, E360; Andreas Gehring, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
    "Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 219 - 222.

    Zusätzliche Informationen

  223. Autor/innen: Robert Entner, E360; Tibor Grasser, E360; H. Enichlmair; R. Minixhofer

    R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
    "Influence of Interface and Oxide Traps on Negative Bias Temperature Instability";
    Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 163 - 164.

  224. Autor/innen: Robert Entner, E360; Tibor Grasser, E360; H. Enichlmair; R. Minixhofer

    R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
    "Investigation of NBTI Recovery During Measurement";
    Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), S. 110 - 111.

  225. Autor/innen: Robert Entner, E360; Tibor Grasser, E360; H. Enichlmair; R. Minixhofer

    R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
    "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), S. 96 - 97.

  226. Autor/innen: Otmar Ertl, E360; Lado Filipovic, E360; Siegfried Selberherr, E360

    O. Ertl, L. Filipovic, S. Selberherr:
    "Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5; S. 49 - 52.

    Zusätzliche Informationen

  227. Autor/innen: Otmar Ertl, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    O. Ertl, C. Heitzinger, S. Selberherr:
    "Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 417 - 420.

    Zusätzliche Informationen

  228. Autor/innen: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 174 - 177.

    Zusätzliche Informationen

  229. Autor/innen: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 61 - 68.

  230. Autor/innen: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 325 - 328.

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  231. Autor/innen: Franz Fasching, E360; Claus Fischer, E360; Stefan Halama, E360; Hubert Pimingstorfer; Howard Read, E360; Siegfried Selberherr, E360; Hannes Stippel, E360; Walter Tuppa, E360; Peter Verhas, E360; Karl Wimmer, E360

    F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, S. Selberherr, H. Stippel, W. Tuppa, P. Verhas, K. Wimmer:
    "A New Open Technology CAD System";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; S. 217 - 220.

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  232. Autor/innen: Franz Fasching, E360; Claus Fischer, E360; Stefan Halama, E360; Hubert Pimingstorfer; Howard Read, E360; Siegfried Selberherr, E360; Hannes Stippel, E360; Peter Verhas, E360; Karl Wimmer, E360

    F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, S. Selberherr, H. Stippel, P. Verhas, K. Wimmer:
    "An Integrated Technology CAD Environment";
    Vortrag: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipeh; 22.05.1991 - 24.05.1991; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1991), ISBN: 0-7803-0036-x; S. 147 - 151.

  233. Autor/innen: Franz Fasching, E360; Claus Fischer, E360; Siegfried Selberherr, E360; Hannes Stippel, E360; Walter Tuppa, E360; Howard Read, E360

    F. Fasching, C. Fischer, S. Selberherr, H. Stippel, W. Tuppa, H. Read:
    "A PIF Implementation for TCAD Purposes";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 477 - 482.

  234. Autor/innen: G Ferrari; C. Jacoboni; Mihail Nedjalkov, E360; A Asenov

    G. Ferrari, C. Jacoboni, M. Nedjalkov, A. Asenov:
    "Introducing Energy Broadening in Semiclassical Monte Carlo Simulations";
    Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 17 - 18.

  235. Autor/innen: W. Fichtner; R. Losehand; E. Guerrero; Siegfried Selberherr, E360; H. Schultz

    W. Fichtner, R. Losehand, E. Guerrero, S. Selberherr, H. Schultz:
    "Exact First Principles Modelling of Short-Channel VMOS Transistors";
    Vortrag: International Conference on Computer Aided Design and Manufacture of Electronic Components, Circuits and Systems (CADMECCS), Brighton; 03.07.1979 - 06.07.1979; in: "Proc.Intl.Conf.on Computer Aided Design and Manufacture of Electronic Components,Circuits and Systems", (1979), S. 28 - 30.

  236. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "CMOS-Compatible Semiconductor-Based Gas Sensors";
    Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Whistler, British Columbia, Canada (eingeladen); 09.05.2018 - 11.05.2018; in: "Book of Abstracts of Emerging Technologies Communication Microsystems Optoelectronics Sensors", (2018).

  237. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "Electromigration Model for Platinum Hotplates";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 315 - 318.

    Zusätzliche Informationen

  238. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "Modeling and Simulation of ALD in a Level Set Framework";
    Vortrag: EFDS Workshop on Simulation for ALD, virtual (eingeladen); 25.03.2021; in: "Proceedings of the EFDS Workshop on Simulation for ALD", (2021), S. 9.

  239. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "Modeling and Simulation of Atomic Layer Deposition";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 323 - 326.

    Zusätzliche Informationen

  240. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "Reliability and Stability of MEMS Microheaters for Gas Sensors";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), online (eingeladen); 04.10.2021 - 28.10.2021; in: "2021 IEEE International Integrated Reliability Workshop (IIRW)", (2021), ISBN: 978-1-6654-1794-5.

    Zusätzliche Informationen

  241. Autor/innen: Lidija Filipovic, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    L. Filipovic, O. Baumgartner, H. Kosina:
    "Modeling Direct Band-to-Band Tunneling using QTBM";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 212 - 215.

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  242. Autor/innen: Lado Filipovic, E360; Oskar Baumgartner, E360; Julius Piso, E360; Josip Bobinac, E360; Tobias Reiter, E360; G Strof, Global TCAD Solu ...; Gerhard Rzepa, E360; Zlatan Stanojevic, E360; Markus Karner, E360

    L. Filipovic, O. Baumgartner, J. Piso, J. Bobinac, T. Reiter, G. Strof, G. Rzepa, Z. Stanojevic, M. Karner:
    "DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 34 - 35.

  243. Autor/innen: Lidija Filipovic, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360

    L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
    "Band-to-Band Tunneling in 3D Devices";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 13 - 14.

  244. Autor/innen: Lidija Filipovic, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360

    L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
    "BTB Tunneling in InAs/Si Heterojunctions";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 245 - 248.

    Zusätzliche Informationen

  245. Autor/innen: Lado Filipovic, E360; Hajdin Ceric, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr:
    "A Simulator for Local Anodic Oxidation of Silicon Surfaces";
    Vortrag: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 08.05.2011 - 11.05.2011; in: "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8; S. 695 - 698.

    Zusätzliche Informationen

  246. Autor/innen: Lado Filipovic, E360; R.L. de Orio; Wolfhard Zisser, E360; Siegfried Selberherr, E360

    L. Filipovic, R.L. de Orio, W. H. Zisser, S. Selberherr:
    "Modeling Electromigration in Nanoscaled Copper Interconnects";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 161 - 164.

    Zusätzliche Informationen

  247. Autor/innen: Lado Filipovic, E360; Otmar Ertl, E360; Siegfried Selberherr, E360

    L. Filipovic, O. Ertl, S. Selberherr:
    "Parallelization Strategy for Hierarchical Run Length Encoded Data Structures";
    Vortrag: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 15.02.2011 - 17.02.2011; in: "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9; S. 131 - 138.

    Zusätzliche Informationen

  248. Autor/innen: Lado Filipovic, E360; Xaver Klemenschits, E360

    L. Filipovic, X. Klemenschits:
    "Fast Model for Deposition in Trenches using Geometric Advection";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 224 - 228.

    Zusätzliche Informationen

  249. Autor/innen: Lado Filipovic, E360; Ayoub Lahlalia, E360; Siegfried Selberherr, E360

    L. Filipovic, A. Lahlalia, S. Selberherr:
    "System-on-Chip Sensor Integration in Advanced CMOS Technology";
    Vortrag: 233rd ECS Meeting (ECS), Seattle, Washington, USA (eingeladen); 13.05.2018 - 17.05.2018; in: "Proceedings of the 233rd ECS Meeting (ECS)", (2018), ISSN: 2151-2043.

  250. Autor/innen: Lado Filipovic, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    L. Filipovic, M. Nedjalkov, S. Selberherr:
    "A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 42 - 43.

  251. Autor/innen: Lado Filipovic, E360; Roberto Orio, E360

    L. Filipovic, R. Orio:
    "Electromigration in Nano-Interconnects";
    Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (eingeladen); 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 2.

  252. Autor/innen: Lado Filipovic, E360; Roberto Orio, E360

    L. Filipovic, R. Orio:
    "Modeling the Influence of Grains and Material Interfaces on Electromigration";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 83 - 87.

    Zusätzliche Informationen

  253. Autor/innen: Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    L. Filipovic, R. Orio, S. Selberherr:
    "Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 321 - 326.

    Zusätzliche Informationen

  254. Autor/innen: Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    L. Filipovic, R. Orio, S. Selberherr:
    "Process and Performance of Copper TSVs";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2.

  255. Autor/innen: Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    L. Filipovic, R. Orio, S. Selberherr:
    "Process and Reliability of SF6/O2 Plasma Etched Copper TSVs";
    Vortrag: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 07.04.2014 - 09.04.2014; in: "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1; 4 S.

    Zusätzliche Informationen

  256. Autor/innen: Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Anderson P. Singulani, E360; Frederic Roger; R. Minixhofer

    L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
    "Effects of Sidewall Scallops on Open Tungsten TSVs";
    Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 3E.3.1 - 3E.3.6.

    Zusätzliche Informationen

  257. Autor/innen: Lado Filipovic, E360; Florian Rudolf, E360; Eberhard Baer; P. Evanschitzky; J. Lorenz; Frederic Roger; Anderson P. Singulani, E360; R. Minixhofer; Siegfried Selberherr, E360

    L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr:
    "Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 341 - 344.

    Zusätzliche Informationen

  258. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 307 - 310.

    Zusätzliche Informationen

  259. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 30.

  260. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "About Processes and Performance of Integrated Gas Sensor Components";
    Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Orlando, USA (eingeladen); 22.11.2014 - 25.11.2014; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2014), S. 96 - 97.

  261. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "CMOS-Compatible Gas Sensors";
    Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 16.09.2019 - 18.09.2019; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2019), S. 9 - 16.

    Zusätzliche Informationen

  262. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Effects of the Deposition Process Variation on the Performance of Open TSVs";
    Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 2188 - 2195.

    Zusätzliche Informationen

  263. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; S. 265 - 272.

    Zusätzliche Informationen

  264. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Gas Sensing with Two-Dimensional Materials Beyond Graphene";
    Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 12.09.2021 - 14.09.2021; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2021), ISBN: 978-1-6654-4526-9; S. 29 - 36.

    Zusätzliche Informationen

  265. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Granularity Effects in Electromigration";
    Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (eingeladen); 25.02.2020 - 28.02.2020; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8.

    Zusätzliche Informationen

  266. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Integration of Gas Sensors with CMOS Technology";
    Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual (eingeladen); 16.03.2020 - 18.03.2020; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; S. 294 - 297.

    Zusätzliche Informationen

  267. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Kinetics of Droplet Motion During Spray Pyrolysis";
    Vortrag: Energy-Materials-Nanotechnology Meeting on Droplets (EMN), Phuket, Thailand (eingeladen); 08.05.2015 - 11.05.2015; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Droplets (EMN)", (2015), S. 127 - 128.

  268. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors";
    Vortrag: World Congress of Smart Materials (WCSM), Singapore (eingeladen); 04.03.2016 - 06.03.2016; in: "Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016", (2016), S. 517.

  269. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Processing of Integrated Gas Sensor Devices";
    Vortrag: IEEE International Technical Conference of IEEE Region 10 (TENCON), Macau, China (eingeladen); 01.11.2015 - 04.11.2015; in: "Proceedings of the IEEE International Technical Conference of IEEE Region 10 (TENCON)", (2015), ISBN: 978-1-4799-8639-2; 6 S.

    Zusätzliche Informationen

  270. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Simulation of Silicon Nanopatterning Using nc-AFM";
    Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 01.07.2012 - 05.07.2012; in: "Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM)", (2012), S. 108.

  271. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 189 - 192.

  272. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China (eingeladen); 28.10.2014 - 31.10.2014; in: "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), ISBN: 978-1-4799-3282-5; S. 1692 - 1695.

    Zusätzliche Informationen

  273. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
    Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 46.

  274. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
    Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S.

  275. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress in Three-Dimensionally Integrated Sensor Systems";
    Vortrag: International Conference on Materials for Advanced Technologies(ICMAT), Singapore (eingeladen); 28.06.2015 - 03.07.2015; in: "Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT)", (2015), S. 342.

  276. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 36.

  277. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; E. Brunet; S. Steinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
    "Modeling Spray Pyrolysis Deposition";
    Vortrag: World Congress on Engineering (WCE), London, UK; 03.07.2013 - 05.07.2013; in: "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), ISBN: 978-988-19252-8-2; S. 987 - 992.

  278. Autor/innen: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; E. Brunet; S. Steinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank; Christian Gspan; Werner Grogger

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
    "Modeling the Growth of Thin SnO2 Films using Spray Pyrolysis Deposition";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 208 - 211.

    Zusätzliche Informationen

  279. Autor/innen: Lado Filipovic, E360; Anderson P. Singulani, E360; Frederic Roger; Sara Carniello; Siegfried Selberherr, E360

    L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
    "Impact of Across-Wafer Variation on the Electrical Performance of TSVs";
    Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, CA, USA; 23.05.2016 - 26.05.2016; in: "Proceedings of the IEEE International Interconnect Technology Conference (IITC)", (2016), ISBN: 978-1-5090-0386-0; S. 130 - 132.

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  280. Autor/innen: Lado Filipovic, E360; Anderson P. Singulani, E360; Frederic Roger; Sara Carniello; Siegfried Selberherr, E360

    L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
    "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), S. 71.

  281. Autor/innen: Lidija Filipovic, E360; Zlatan Stanojevic; Oskar Baumgartner, E360; Hans Kosina, E360

    L. Filipovic, Z. Stanojevic, O. Baumgartner, H. Kosina:
    "3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2.

  282. Autor/innen: Simone Fiorentini, E360; Mario Bendra, E360-01; Johannes Ender, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Spin Torques in ULTRA-Scaled MRAM Devices";
    Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 348 - 351.

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  283. Autor/innen: Simone Fiorentini, E360; Mario Bendra, E360-01; Johannes Ender, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Design Support for Ultra-Scaled MRAM Cells";
    Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 13.12.2021 - 15.12.2021; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 S.

  284. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Mohamed Mohamedou, E360-01; Roberto Orio, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 209 - 212.

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  285. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Mohamed Mohamedou, E360-01; Viktor Sverdlov, E360; Wolfgang Goes, Silvaco; Roberto Orio, E360; Siegfried Selberherr, E360

    S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
    "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
    Vortrag: SPIE Spintronics, San Diego, CA, USA - virtual (eingeladen); 24.08.2020 - 28.08.2020; in: "Proceedings of SPIE Spintronics", (2020), S. 11470-44.

  286. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12.

  287. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 155 - 158.

    Zusätzliche Informationen

  288. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 51 - 52.

  289. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, S. Selberherr, W. Goes, V. Sverdlov:
    "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach";
    Vortrag: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 12.07.2022 - 15.07.2022; in: "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", 20 (2022), 4; S. 40 - 44.

    Zusätzliche Informationen

  290. Autor/innen: Simone Fiorentini, E360; Johannes Ender, E360; Siegfried Selberherr, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 31.03.2020 - 02.04.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 112 - 113.

  291. Autor/innen: Simone Fiorentini, E360; Wilton Jaciel Loch, E360-01; Mario Bendra, E360-01; Nils Petter Jørstad, E360-01; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr:
    "Design Analysis of Ultra-Scaled MRAM Cells";
    Vortrag: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China (eingeladen); 25.10.2022 - 28.10.2022; in: "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0.

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  292. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
    "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 57 - 60.

    Zusätzliche Informationen

  293. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Switching in Perpendicular STT-MRAM";
    Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 107 - 108.

  294. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
    Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 10.05.2020 - 14.05.2020; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/1389 (2020).

    Zusätzliche Informationen

  295. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current";
    Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 16.03.2020 - 18.03.2020; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; S. 341 - 344.

    Zusätzliche Informationen

  296. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices";
    Vortrag: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 12 - 13.

  297. Autor/innen: Claus Fischer, E360; Siegfried Selberherr, E360

    C. Fischer, S. Selberherr:
    "Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in: "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6; S. 123 - 126.

  298. Autor/innen: Peter Fleischmann, E360; Bernhard Haindl, E384; Robert Kosik, E360; Siegfried Selberherr, E360

    P. Fleischmann, B. Haindl, R. Kosik, S. Selberherr:
    "Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 71 - 74.

    Zusätzliche Informationen

  299. Autor/innen: Peter Fleischmann, E360; Robert Kosik, E360; Bernhard Haindl, E384; Siegfried Selberherr, E360

    P. Fleischmann, R. Kosik, B. Haindl, S. Selberherr:
    "Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements";
    Vortrag: International Meshing Roundtable, South Lake Tahoe; 10.10.1999 - 13.10.1999; in: "Proceedings 8th Intl. Meshing Roundtable", (1999), S. 241 - 246.

  300. Autor/innen: Peter Fleischmann, E360; Ernst Leitner, E360; Siegfried Selberherr, E360

    P. Fleischmann, E. Leitner, S. Selberherr:
    "Optimized Geometry Preprocessing for Three-Dimensional Semiconductor Process Simulation";
    Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 317 - 321.

  301. Autor/innen: Peter Fleischmann, E360; Rainer Sabelka, E360; Andreas Stach, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, S. Selberherr:
    "Grid Generation for Three-Dimensional Process and Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan (eingeladen); 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 161 - 166.

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  302. Autor/innen: Peter Fleischmann, E360; Siegfried Selberherr, E360

    P. Fleischmann, S. Selberherr:
    "A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 129 - 130.

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  303. Autor/innen: Peter Fleischmann, E360; Siegfried Selberherr, E360

    P. Fleischmann, S. Selberherr:
    "Enhanced Advancing Front Delaunay Meshing in TCAD";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 99 - 102.

    Zusätzliche Informationen

  304. Autor/innen: Peter Fleischmann, E360; Siegfried Selberherr, E360

    P. Fleischmann, S. Selberherr:
    "Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach";
    Vortrag: International Meshing Roundtable, Park City; 13.10.1997 - 15.10.1997; in: "Proceedings 6th International Meshing Roundtable", (1997), S. 267 - 278.

  305. Autor/innen: Samuel Foster; Michael Thesberg, E360; Neophytos Neophytou

    S. Foster, M. Thesberg, N. Neophytou:
    "Fully Quantum Mechanical Transport Simulations for the Calculation of the Thermoelectric Power Factor in Nanocomposite Materials";
    Vortrag: European Conference on Thermoelectrics (ECT), Padova, Italy; 25.09.2017 - 27.09.2017; in: "Book of Abstracts 15th European Conference on Thermoelectrics", (2017).

  306. Autor/innen: J. Franco; H Arimura; J.-F. Marneffe; Anne Vandooren; L. A. Ragnarsson; Zhicheng Wu; Dieter Claes; Eugenio Dentoni Litta; N. Horiguchi; Kristof Croes; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, H. Arimura, J. Marneffe, A. Vandooren, L. Ragnarsson, Z. Wu, D. Claes, E. D. Litta, N. Horiguchi, K. Croes, D. Linten, T. Grasser, B. Kaczer:
    "Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies";
    Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Dresden, Germany; 15.09.2021 - 17.09.2021; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2021), ISBN: 978-1-6654-4998-4; S. 1 - 4.

  307. Autor/innen: J. Franco; Ben Kaczer; M. Cho; G. Eneman; G. Groeseneken; Tibor Grasser, E360

    J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser:
    "Improvements of NBTI Reliability in SiGe p-FETs";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1082 - 1085.

  308. Autor/innen: J. Franco; Ben Kaczer; G. Eneman; J. Mitard; A. Stesmans; V. Afanas´Ev; T. Kauerauf; Ph. J. Roussel; M. Toledano-Luque; M. Cho; R. Degraeve; Tibor Grasser, E360; L. A. Ragnarsson; L. Witters; J. Tseng; S. Takeoka; W.E. Wang; T.Y. Hoffmann; G. Groeseneken

    J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken:
    "6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 06.12.2010 - 08.12.2010; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), S. 70 - 73.

    Zusätzliche Informationen

  309. Autor/innen: J. Franco; Ben Kaczer; G. Eneman; Ph. J. Roussel; M. Cho; J. Mitard; L. Witters; T.Y. Hoffmann; G. Groeseneken; F. Crupi; Tibor Grasser, E360

    J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, M. Cho, J. Mitard, L. Witters, T. Y. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser:
    "On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 6 S.

    Zusätzliche Informationen

  310. Autor/innen: J. Franco; Ben Kaczer; G. Eneman; Ph. J. Roussel; Tibor Grasser, E360; J. Mitard; L. A. Ragnarsson; M. Cho; L. Witters; T. Chiarella; M. Togo; W.E. Wang; A. Hikavyy; R. Loo; N. Horiguchi; G. Groeseneken

    J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken:
    "Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S.

    Zusätzliche Informationen

  311. Autor/innen: J. Franco; Ben Kaczer; J. Mitard; M. Toledano-Luque; F. Crupi; G. Eneman; Ph. J. Roussel; Tibor Grasser, E360; M. Cho; T. Kauerauf; L. Witters; Geert Hellings; L. A. Ragnarsson; N. Horiguchi; Marc M. Heyns; G. Groeseneken

    J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
    "Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications";
    Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (eingeladen); 30.05.2012 - 01.06.2012; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2012), S. 1 - 4.

  312. Autor/innen: J. Franco; Ben Kaczer; J. Mitard; M. Toledano-Luque; G. Eneman; Ph. J. Roussel; M. Cho; T. Kauerauf; Tibor Grasser, E360; L. Witters; Geert Hellings; L. A. Ragnarsson; N. Horiguchi; Marc M. Heyns; G. Groeseneken

    J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
    "Reliability of SiGe Channel MOS";
    Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 3119, 1 S.

  313. Autor/innen: J. Franco; Ben Kaczer; Philippe J. Roussel; E. Bury; H. Mertens; Romain Ritzenthaler; Tibor Grasser, E360; N. Horiguchi; A. Thean; Guido Groeseneken

    J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, G Groeseneken:
    "NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. 2F.4.1 - 2F.4.5.

    Zusätzliche Informationen

  314. Autor/innen: J. Franco; Ben Kaczer; Philippe J. Roussel; M. Toledano-Luque; P. Weckx; Tibor Grasser, E360

    J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser:
    "Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 69 - 72.

  315. Autor/innen: J. Franco; Ben Kaczer; Ph. J. Roussel; J. Mitard; S. Sioncke; L. Witters; H. Mertens; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken:
    "Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 397 - 400.

    Zusätzliche Informationen

  316. Autor/innen: J. Franco; Ben Kaczer; M. Toledano-Luque; Ph. J. Roussel; G. Groeseneken; Benedikt Schwarz, E362; Markus Bina; Michael Waltl, E360; Paul-Jürgen Wagner, E360; Tibor Grasser, E360

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser:
    "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6.

  317. Autor/innen: J. Franco; Ben Kaczer; M. Toledano-Luque; Ph. J. Roussel; J. Mitard; L. A. Ragnarsson; L. Witters; T. Chiarella; M. Togo; N. Horiguchi; G. Groeseneken; Muhammad Faiz Bukhori; Tibor Grasser, E360; A Asenov

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov:
    "Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs";
    Vortrag: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  318. Autor/innen: J. Franco; Ben Kaczer; N. Waldron; Ph. J. Roussel; A. Alian; M. A. Pourghaderi; Z. Ji; Tibor Grasser, E360; T. Kauerauf; S. Sioncke; N. Collaert; A. Thean; G. Groeseneken

    J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken:
    "RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7; S. 506 - 509.

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  319. Autor/innen: J. Franco; J.-F. Marneffe; Anne Vandooren; H Arimura; L. A. Ragnarsson; Dieter Claes; Eugenio Dentoni Litta; N. Horiguchi; Kristof Croes; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, J. Marneffe, A. Vandooren, H. Arimura, L. Ragnarsson, D. Claes, E. D. Litta, N. Horiguchi, K. Croes, D. Linten, T. Grasser, B. Kaczer:
    "Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic";
    Vortrag: International Symposium on VLSI Technology, Kyoto, Japan; 13.06.2021 - 19.06.2021; in: "2021 Symposium on VLSI Technology (VLSIT)", (2021), ISBN: 978-1-6654-1945-1; S. 1 - 2.

  320. Autor/innen: J. Franco; J.-F. Marneffe; Anne Vandooren; Y Kimura; L Nyns; Zhicheng Wu; Al-Moatasem El-Sayed, E360; Markus Jech, E360; Dominic Waldhör, E360; Dieter Claes; H Arimura; L. A. Ragnarsson; V. Afanas´Ev; N. Horiguchi; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer:
    "Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 12.12.2021 - 18.12.2021; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1; S. 31.2.1 - 31.2.4.

    Zusätzliche Informationen

  321. Autor/innen: J. Franco; Vamsi Putcha; Abhitosh Vais; S. Sioncke; N. Waldron; Daisy Zhou; Gerhard Rzepa, E360; Philippe J. Roussel; G. Groeseneken; Marc M. Heyns; N. Collaert; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
    "Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 02.12.2017 - 06.12.2017; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 S.

    Zusätzliche Informationen

  322. Autor/innen: J. Franco; Zhicheng Wu; Gerhard Rzepa, E360; L. A. Ragnarsson; Harold Dekkers; Anne Vandooren; G. Groeseneken; N. Horiguchi; N. Collaert; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G. Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
    "On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3; S. 1 - 4.

    Zusätzliche Informationen

  323. Autor/innen: J. Franco; Zhicheng Wu; Gerhard Rzepa, E360; Anne Vandooren; H Arimura; Dieter Claes; N. Horiguchi; N. Collaert; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, D. Claes, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
    "Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes";
    Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore (eingeladen); 12.03.2019 - 15.03.2019; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4; S. 215 - 217.

    Zusätzliche Informationen

  324. Autor/innen: J. Franco; Zhicheng Wu; Gerhard Rzepa, E360; Anne Vandooren; H Arimura; L. A. Ragnarsson; Geert Hellings; Stephan Brus; D. Cott; Vincent De Heyn; G. Groeseneken; N. Horiguchi; J. Ryckaert; N. Collaert; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, L. Ragnarsson, G. Hellings, S. Brus, D. Cott, V. De Heyn, G. Groeseneken, N. Horiguchi, J. Ryckaert, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
    "BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 01.12.2018 - 05.12.2018; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8; S. 34.2.1 - 34.2.4.

    Zusätzliche Informationen

  325. Autor/innen: Andrea Franz, E366; Gerhard Franz, E366; Siegfried Selberherr, E360

    A. Franz, G. Franz, S. Selberherr:
    "BAMBI - a Design Model for Power MOSFETs";
    Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 179 - 181.

  326. Autor/innen: Andrea Franz, E366; Gerhard Franz, E366; Siegfried Selberherr, E360

    A. Franz, G. Franz, S. Selberherr:
    "Numerical 2-D Simulation of Vertical Power MOSFETs";
    Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 29.

  327. Autor/innen: Andrea Franz, E366; Gerhard Franz, E366; Siegfried Selberherr, E360

    A. Franz, G. Franz, S. Selberherr:
    "Numerical 2-D Simulation of Vertical Power MOSFETs";
    Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 187 - 202.

  328. Autor/innen: Andrea Franz, E366; Gerhard Franz, E366; Siegfried Selberherr, E360; Peter A. Markowich

    A. Franz, G. Franz, S. Selberherr, P. Markowich:
    "The Influence of Various Mobility Models on the Iteration Process and Solution of the Basic Semiconductor Equations";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 117 - 121.

  329. Autor/innen: Andrea Franz, E366; Gerhard Franz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Franz, G. Franz, S. Selberherr, H. Pötzl:
    "Numerische Simulation von GaAs-Bauelementen";
    Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 23.03.1983 - 26.03.1983; in: "Tagungsbericht Grundlagen und Technologie elektronischer Bauelemente", (1983), S. 50 - 54.

  330. Autor/innen: Andrea Franz, E366; Gerhard Franz, E366; Siegfried Selberherr, E360; Ch. Ringhofer; Peter A. Markowich

    A. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich:
    "Finite Boxes - A Generalization of the Finite Difference Method Utmost Suitable for Semiconductor Device Simulation";
    Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 3.

  331. Autor/innen: Gerhard Franz, E366; Andrea Franz, E366; Siegfried Selberherr, E360

    G. Franz, A. Franz, S. Selberherr:
    "2-D Steady State and Transient Simulation of Power Thyristors";
    Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 28.

  332. Autor/innen: Gerhard Franz, E366; Andrea Franz, E366; Siegfried Selberherr, E360

    G. Franz, A. Franz, S. Selberherr:
    "2-D Steady State and Transient Simulation of Power Thyristors";
    Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 171 - 185.

  333. Autor/innen: Gerhard Franz, E366; Andrea Franz, E366; Siegfried Selberherr, E360; Peter A. Markowich

    G. Franz, A. Franz, S. Selberherr, P. Markowich:
    "A Quasi Three Dimensional Semiconductor Device Simulation Using Cylindrical Coordinates";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 122 - 127.

  334. Autor/innen: Abel Garcia-Barrientos; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Palankovski:
    "Amplification of Space Charge Waves in n-InP Films";
    Vortrag: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 08.09.2010 - 10.09.2010; in: "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", IEEE, (2010), ISBN: 978-1-4244-7314-4; S. 613 - 616.

    Zusätzliche Informationen

  335. Autor/innen: Abel Garcia-Barrientos; Vassil Palankovski, E360; V. Grimalsky

    A. Garcia-Barrientos, V. Palankovski, V. Grimalsky:
    "Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films";
    Vortrag: International Conference on Microelectronics (MIEL), Nis; 16.05.2010 - 19.05.2010; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0; S. 161 - 164.

    Zusätzliche Informationen

  336. Autor/innen: W. Gartner; Karl Wimmer, E360

    W. Gartner, K. Wimmer:
    "Diffusion in Layered Matter: Selective Excitation Decoding, Magnetic Resonance Images in the Applied Sciences";
    Vortrag: Workshop Syllabus, Durham; 26.10.1992 - 28.10.1992; in: "Proceedings Workshop Syllabus", (1992), S. 16.

  337. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
    "A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 235 - 238.

    Zusätzliche Informationen

  338. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
    "An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; S. 48 - 51.

  339. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, S. Selberherr:
    "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method";
    Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in: "2001 International Semiconductor Device Research Symposium", (2001), S. 260 - 263.

  340. Autor/innen: Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, S. Selberherr:
    "Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 560 - 563.

  341. Autor/innen: Andreas Gehring, E360; S. Harasek; Emmerich Bertagnolli, E362; Siegfried Selberherr, E360

    A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr:
    "Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices";
    Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 473 - 476.

  342. Autor/innen: Andreas Gehring, E360; Clemens Heitzinger, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr:
    "TCAD Analysis of Gain Cell Retention Time for SRAM Applications";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 416 - 419.

    Zusätzliche Informationen

  343. Autor/innen: Andreas Gehring, E360; F. Jimenez-Molinos; A. Palma; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, F. Jimenez-Molinos, A. Palma, H. Kosina, S. Selberherr:
    "Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current";
    Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), München; 07.03.2002 - 08.03.2002; in: "3rd European Workshop on Ultimate Integration of Silicon", (2002), S. 15 - 18.

  344. Autor/innen: Andreas Gehring, E360; Hans Kosina, E360

    A. Gehring, H. Kosina:
    "Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method";
    Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 227 - 228.

    Zusätzliche Informationen

  345. Autor/innen: Andreas Gehring, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
    "Consistent Comparison of Tunneling Models for Device Simulation";
    Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; S. 131 - 134.

  346. Autor/innen: Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, H. Kosina, S. Selberherr:
    "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
    Vortrag: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), S. 105 - 106.

  347. Autor/innen: Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, H. Kosina, S. Selberherr:
    "Transmission Coefficient Estimation for High-k Gate Stack Evaluation";
    Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 156 - 159.

  348. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Current Transport Models for Nano-Scale Semiconductor Devices";
    Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (eingeladen); 10.07.2005 - 13.07.2005; in: "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", Vol. 6 (2005), ISBN: 980-6560-58-2; S. 366 - 371.

  349. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Evolution of Current Transport Models for Engineering Applications";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA (eingeladen); 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 20 - 21.

    Zusätzliche Informationen

  350. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Gate Current Modeling for MOSFETs";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana (eingeladen); 03.11.2004 - 05.11.2004; in: "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5; S. 1 - 8.

    Zusätzliche Informationen

  351. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: R Huang; M Yu; Juin J. Liou; Toshiro Hiramoto; Cor Claeys

    A. Gehring, S. Selberherr:
    "Gate Leakage Models for Device Simulation";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (eingeladen); 18.10.2004 - 21.10.2004; in: "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (Hrg.); IEEE Press, Volume II (2004), ISBN: 0-7803-8511-x; S. 971 - 976.

    Zusätzliche Informationen

  352. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 05.07.2004 - 08.07.2004; in: "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7; S. 61 - 64.

    Zusätzliche Informationen

  353. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 25 - 28.

    Zusätzliche Informationen

  354. Autor/innen: Andreas Gehring, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr:
    "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 19.01.2005 - 21.01.2005; in: "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), S. 71 - 72.

    Zusätzliche Informationen

  355. Autor/innen: L. Gerrer; Razaidi Hussin; S. M. Amoroso; J. Franco; P. Weckx; N. Simicic; N. Horiguchi; Ben Kaczer; Tibor Grasser, E360; A Asenov

    L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov:
    "Experimental Evidences and Simulations of Trap Generation along a Percolation Path";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 226 - 229.

    Zusätzliche Informationen

  356. Autor/innen: Joydeep Ghosh; Dimitry Osintsev, E360; Viktor Sverdlov, E360; S. Ganguly

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
    "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 79 - 80.

  357. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), ISBN: 978-1-4799-6910-4; S. 285 - 288.

    Zusätzliche Informationen

  358. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization";
    Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 31.08.2015 - 01.09.2015; in: "Proceedings of the nanoHUB User Conference", (2015), S. 1.

  359. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
    Vortrag: European Materials Research Society (EMRS), Warsaw, Poland; 15.09.2015 - 18.09.2015; in: "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 S.

  360. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 277 - 280.

    Zusätzliche Informationen

  361. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
    Vortrag: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 29.06.2015 - 02.07.2015; in: "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2; S. 235 - 236.

  362. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
    Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015).

  363. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 35 - 36.

  364. Autor/innen: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
    Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S.

  365. Autor/innen: Joydeep Ghosh, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, V. Sverdlov, S. Selberherr:
    "Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in: "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), S. 130.

  366. Autor/innen: Joydeep Ghosh, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, V. Sverdlov, S. Selberherr:
    "Influence of a Space Charge Region on Spin Transport in Semiconductor";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 11.12.2013 - 13.12.2013; in: "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3; S. 27.

  367. Autor/innen: Joydeep Ghosh, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, V. Sverdlov, S. Selberherr:
    "Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5; 4 S.

    Zusätzliche Informationen

  368. Autor/innen: Joydeep Ghosh, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, V. Sverdlov, S. Selberherr:
    "Spin Diffusion in Silicon from a Ferromagnetic Contact";
    Vortrag: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in: "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8; S. 165.

  369. Autor/innen: Joydeep Ghosh, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, V. Sverdlov, S. Selberherr:
    "Spin Injection in Silicon: The Role of Screening Effects";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 63 - 64.

  370. Autor/innen: Joydeep Ghosh, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
    Vortrag: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in: "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), S. 713 - 714.

  371. Autor/innen: Kay-Uwe Giering; Gunnar Andreas Rott; Gerhard Rzepa, E360; H. Reisinger; A.K. Puppala; T. Reich; W. Gustin; Tibor Grasser, E360; Roland Jancke

    K. Giering, G.A. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke:
    "Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model";
    Vortrag: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. 4C-4-1 - 4C-4-6.

    Zusätzliche Informationen

  372. Autor/innen: Kay-Uwe Giering; Christoph Sohrmann; Gerhard Rzepa, E360; Leonhard Heiß; Tibor Grasser, E360; Roland Jancke

    K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke:
    "NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; S. 29 - 34.

    Zusätzliche Informationen

  373. Autor/innen: Lukas Gnam, E360; Paul Manstetten, E360; Michael Quell, E360; Karl Rupp, E360; Siegfried Selberherr, E360; Josef Weinbub, E360

    L. Gnam, P. Manstetten, M. Quell, K. Rupp, S. Selberherr, J. Weinbub:
    "A Flexible Shared-Memory Parallel Mesh Adaptation Framework";
    Vortrag: International Conference on Computational Science and Its Applications (ICCSA), Saint Petersburg , Russia; 01.07.2019 - 04.07.2019; in: "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2019), ISBN: 978-1-7281-2847-4; S. 158 - 165.

    Zusätzliche Informationen

  374. Autor/innen: Lukas Gnam, E360; Paul Manstetten, E360; Siegfried Selberherr, E360; Josef Weinbub, E360

    L. Gnam, P. Manstetten, S. Selberherr, J. Weinbub:
    "Comparison of High-Performance Graph Coloring Algorithms";
    Vortrag: Vienna Young Scientists Symposium (VSS), Vienna, Austria; 07.06.2018 - 08.06.2018; in: "Proceedings of the Vienna Young Scientists Symposium", (2018), ISBN: 978-3-9504017-8-3; S. 30 - 31.

  375. Autor/innen: Lukas Gnam, E360; Siegfried Selberherr, E360; Josef Weinbub, E360

    L. Gnam, S. Selberherr, J. Weinbub:
    "Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms";
    Vortrag: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in: "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), S. 52.

  376. Autor/innen: Lukas Gnam, E360; Josef Weinbub, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360

    L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr:
    "Towards a Metric for an Automatic Hull Mesh Coarsening Strategy";
    Vortrag: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 01.06.2017 - 02.06.2017; in: "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2; S. 118 - 119.

  377. Autor/innen: Lukas Gnam, E360; Josef Weinbub, E360; Karl Rupp, E360; Florian Rudolf, E360; Siegfried Selberherr, E360

    L. Gnam, J. Weinbub, K. Rupp, F. Rudolf, S. Selberherr:
    "Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation";
    Vortrag: International Meshing Roundtable (IMR), Barcelona, Spanien; 18.09.2017 - 21.09.2017; in: "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5 S.

  378. Autor/innen: Wolfgang Gös, E360; Tibor Grasser, E360

    W. Gös, T. Grasser:
    "Charging and Discharging of Oxide Defects in Reliability Issues";
    Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8; S. 27 - 32.

  379. Autor/innen: Wolfgang Gös, E360; Tibor Grasser, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    W. Gös, T. Grasser:
    "First-Principles Investigation on Oxide Trapping";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 157 - 160.

    Zusätzliche Informationen

  380. Autor/innen: Wolfgang Gös, E360; Tibor Grasser, E360; Markus Karner, E360; Ben Kaczer

    W. Gös, T. Grasser, M. Karner, B. Kaczer:
    "A Model for Switching Traps in Amorphous Oxides";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 159 - 162.

    Zusätzliche Informationen

  381. Autor/innen: Wolfgang Gös, E360; Markus Karner, E360; Viktor Sverdlov, E360; Tibor Grasser, E360

    W. Gös, M. Karner, V. Sverdlov, T. Grasser:
    "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; S. 249 - 254.

  382. Autor/innen: Wolfgang Gös, E360; Markus Karner, E360; S. E. Tyaginov, E360; Philipp Paul Hehenberger, E360; Tibor Grasser, E360

    W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser:
    "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 69 - 72.

    Zusätzliche Informationen

  383. Autor/innen: Wolfgang Gös, E360; Franz Schanovsky, E360; Tibor Grasser, E360; H. Reisinger; Ben Kaczer

    W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer:
    "Advanced Modeling of Oxide Defects for Random Telegraph Noise";
    Vortrag: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 12.06.2011 - 16.06.2011; in: "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 S.

  384. Autor/innen: Wolfgang Gös, E360; Franz Schanovsky, E360; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; Tibor Grasser, E360

    W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
    "Charge Trapping and the Negative Bias Temperature Instability";
    Vortrag: 218th ECS Meeting, Las Vegas, USA; 10.10.2010 - 15.10.2010; in: "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0; 565 S.

  385. Autor/innen: Wolfgang Gös, E360; Franz Schanovsky, E360; H. Reisinger; Ben Kaczer; Tibor Grasser, E360

    W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
    "Bistable Defects as the Cause for NBTI and RTN";
    Vortrag: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria (eingeladen); 25.09.2011 - 30.09.2011; in: "GADEST 2011: Abstract Booklet", (2011), S. 153.

  386. Autor/innen: Wolfgang Gös, E360; M. Toledano-Luque; Oskar Baumgartner, E360; Markus Bina; Franz Schanovsky, E360; Ben Kaczer; Tibor Grasser, E360

    W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
    "Understanding Correlated Drain and Gate Current Fluctuations";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 51 - 56.

  387. Autor/innen: Wolfgang Gös, E360; M. Toledano-Luque; Oskar Baumgartner, E360; Markus Bina; Franz Schanovsky, E360; Ben Kaczer; Tibor Grasser, E360

    W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
    "Understanding Correlated Drain and Gate Current Fluctuations";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France (eingeladen); 30.09.2013 - 04.10.2013; in: "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), S. 51 - 56.

  388. Autor/innen: Wolfgang Gös, E360; M. Toledano-Luque; Oskar Baumgartner, E360; Franz Schanovsky, E360; Ben Kaczer; Tibor Grasser, E360

    W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser:
    "A Comprehensive Model for Correlated Drain and Gate Current Fluctuations";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 46 - 47.

  389. Autor/innen: Wolfgang Gös, E360; M. Toledano-Luque; Franz Schanovsky, E360; Markus Bina; Oskar Baumgartner, E360; Ben Kaczer; Tibor Grasser, E360

    W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser:
    "Multi-Phonon Processes as the Origin of Reliability Issues";
    Vortrag: Meeting of the Electrochemical Society (ECS), San Francisco, USA (eingeladen); 27.10.2013 - 01.11.2013; in: "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", 58/7/ (2013), S. 31 - 47.

    Zusätzliche Informationen

  390. Autor/innen: Wolfgang Gös, E360; Michael Waltl, E360; Yannick Wimmer, E360; Gerhard Rzepa, E360; Tibor Grasser, E360

    W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
    "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan (eingeladen); 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 77 - 80.

    Zusätzliche Informationen

  391. Autor/innen: Laura Gollner, E360; Robin Steiner; Lado Filipovic, E360

    L. Gollner, R. Steiner, L. Filipovic:
    "Study of Phonon-limited Electron Transport in Monolayer MoS2";
    Vortrag: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in: "Microelectronic Devices and Technologies Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT 2022)", (2022), ISBN: 978-84-09-43856-3; S. 74 - 78.

    Zusätzliche Informationen

  392. Autor/innen: Benito Gonzalez; Vassil Palankovski, E360; Hans Kosina, E360; A. Hernandez; Siegfried Selberherr, E360

    B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
    "An Analytical Model for the Electron Energy Relaxation Time";
    Vortrag: Conference De Dispositivos Electronicos, Madrid; 10.06.1999 - 11.06.1999; in: "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5; S. 263 - 266.

  393. Autor/innen: Benito Gonzalez; Vassil Palankovski, E360; Hans Kosina, E360; A. Hernandez; Siegfried Selberherr, E360

    B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
    "An Energy Relaxation Time Model for Device Simulation";
    Vortrag: International Conference on Modelling and Simulation, Philadelphia; 05.05.1999 - 08.05.1999; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8; S. 367 - 370.

  394. Autor/innen: Venkatesh Gopinath; Sheldon Aronowitz; Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Gopinath, S. Aronowitz, V. Palankovski, S. Selberherr:
    "Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior";
    Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 631 - 634.

    Zusätzliche Informationen

  395. Autor/innen: P. Gottschling; Rene Heinzl, E360; Josef Weinbub, E360; N. Kirchner; M. Sauer; A. Klomfass; C. Steinhardt; J. Wensch

    P. Gottschling, R. Heinzl, J. Weinbub, N. Kirchner, M. Sauer, A. Klomfass, C. Steinhardt, J. Wensch:
    "Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes";
    Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; S. 1631 - 1634.

  396. Autor/innen: Wladek Grabinski; Tibor Grasser, E360; Gennady Gildenblat; Gert-Jan Smit; Matthias Bucher; Annemarie Aarts; Alireza Tajic; Yogesh Singh Chauhan; Andrzej Napieralski; T.A. Fjeldly; Benjamin Iniguez; G Iannaccone; Mahe Kayal; Werner Posch; G. Wachutka; Fabian Prégaldiny; Christophe Lallement; Laurent Lemaitre

    W. Grabinski, T. Grasser, G. Gildenblat, G.-J. Smit, M. Bucher, A. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T.A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Prégaldiny, CH. Lallement, L. Lemaitre:
    "MOS-AK: Open Compact Modeling Forum";
    Vortrag: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan (eingeladen); 23.01.2007; in: "The 4th International Workshop on Compact Modeling", (2007), S. 1 - 11.

  397. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Charge Trapping in Oxides From RTN to BTI";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 10.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 128 S.

  398. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Closure Relations for Macroscopic Transport Models";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington (eingeladen); 10.12.2003 - 12.12.2003; in: "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4; S. 504 - 505.

  399. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial) (eingeladen); 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1.

  400. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Negative Bias Temperature Instability: Modeling Challenges and Perspectives";
    Vortrag: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 27.04.2008 - 01.05.2008; in: "2008 Reliability Physics Tutorial Notes", (2008), S. 113 - 120.

  401. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Recent Developments in Understanding the Bias Temperature Instability";
    Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 13.05.2012 - 16.05.2012; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8; S. 315 - 322.

    Zusätzliche Informationen

  402. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Simulation of Semiconductor Devices and Circuits at High Frequencies";
    Vortrag: GMe Forum 2001, Wien (eingeladen); 05.04.2001 - 06.04.2001; in: "Proceedings of the GMe Forum", (2001), S. 91 - 96.

  403. Autor/innen: Tibor Grasser, E360; T. Aichinger; G. Pobegen; H. Reisinger; Paul-Jürgen Wagner, E360; J. Franco; M. Nelhiebel; Ben Kaczer

    T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer:
    "The `Permanent´ Component of NBTI: Composition and Annealing";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 9 S.

  404. Autor/innen: Tibor Grasser, E360; T. Aichinger; H. Reisinger; J. Franco; Paul-Jürgen Wagner, E360; M. Nelhiebel; C. Ortolland; Ben Kaczer

    T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer:
    "On the 'Permanent' Component of NBTI";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 2 - 7.

    Zusätzliche Informationen

  405. Autor/innen: Tibor Grasser, E360; Robert Entner, E360; Oliver Triebl, E360; H. Enichlmair

    T. Grasser, R. Entner, O. Triebl, H. Enichlmair:
    "TCAD Modeling of Negative Bias Temperature Instability";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 330 - 333.

    Zusätzliche Informationen

  406. Autor/innen: Tibor Grasser, E360; Andreas Gehring, E360; Siegfried Selberherr, E360

    T. Grasser, A. Gehring, S. Selberherr:
    "Macroscopic Transport Models for Microelectronics Devices";
    Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (eingeladen); 14.07.2002 - 18.07.2002; in: "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1; S. 223 - 228.

  407. Autor/innen: Tibor Grasser, E360; Andreas Gehring, E360; Siegfried Selberherr, E360

    T. Grasser, A. Gehring, S. Selberherr:
    "Recent Advances in Transport Modeling for Miniaturized CMOS Devices";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba (eingeladen); 17.04.2002 - 19.04.2002; in: "Proceedings of the ICCDCS 2002", D027 (2002), ISBN: 0-7803-7380-4; S. 1 - 8.

  408. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, W. Gös, B. Kaczer:
    "Modeling Bias Temperature Instability During Stress and Recovery";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 65 - 68.

    Zusätzliche Informationen

  409. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, W. Gös, B. Kaczer:
    "Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability";
    Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 16.10.2006 - 19.10.2006; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2006), ISBN: 1-4244-0297-2; S. 5 - 10.

  410. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Viktor Sverdlov, E360; Ben Kaczer

    T. Grasser, W. Gös, V. Sverdlov, B. Kaczer:
    "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization";
    Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 15.04.2007 - 19.04.2007; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5; S. 268 - 280.

  411. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Yannick Wimmer, E360; Franz Schanovsky, E360; Gerhard Rzepa, E360; Michael Waltl, E360; K. Rott; H. Reisinger; V. V. Afanas´Ev; A. Stesmans; A.-M. El-Sayed; A. L. Shluger

    T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
    "On the Microscopic Structure of Hole Traps in pMOSFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7; S. 530 - 533.

    Zusätzliche Informationen

  412. Autor/innen: Tibor Grasser, E360; C. Jungemann; Hans Kosina, E360; Bernd Meinerzhagen; Siegfried Selberherr, E360

    T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
    "Advanced Transport Models for Sub-Micrometer Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (eingeladen); 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 1 - 8.

    Zusätzliche Informationen

  413. Autor/innen: Tibor Grasser, E360; Ben Kaczer

    T. Grasser, B. Kaczer:
    "Critical Modeling Issues in Negative Bias Temperature Instability";
    Vortrag: 215th ECS Meeting, San Francisco (eingeladen); 24.05.2009 - 29.05.2009; in: "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213; S. 793.

  414. Autor/innen: Tibor Grasser, E360; Ben Kaczer

    T. Grasser, B. Kaczer:
    "Negative Bias Temperature Instability: Recoverable versus Permanent Degradation";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6; S. 127 - 130.

  415. Autor/innen: Tibor Grasser, E360; Ben Kaczer; T. Aichinger; Wolfgang Gös, E360; M. Nelhiebel

    T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel:
    "Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks";
    Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), S. 91 - 95.

  416. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360

    T. Grasser, B. Kaczer, W. Gös:
    "An Energy-Level Perspective of Bias Temperature Instability";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht (eingeladen); 29.09.2008 - 02.10.2008; in: "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008).

  417. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360

    T. Grasser, B. Kaczer, W. Gös:
    "An Energy-Level Perspective of Bias Temperature Instability";
    Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), S. 28 - 38.

  418. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360; T. Aichinger; Philipp Paul Hehenberger, E360; M. Nelhiebel

    T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
    "A Two-Stage Model for Negative Bias Temperature Instability";
    Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 33 - 44.

  419. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360; H. Reisinger; T. Aichinger; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; Franz Schanovsky, E360; J. Franco; Ph. J. Roussel; M. Nelhiebel

    T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel:
    "Recent Advances in Understanding the Bias Temperature Instability";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 06.12.2010 - 08.12.2010; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), S. 82 - 85.

    Zusätzliche Informationen

  420. Autor/innen: Tibor Grasser, E360; Ben Kaczer; Philipp Paul Hehenberger, E360; Wolfgang Gös, E360; R. Connor; H. Reisinger; W. Gustin; C. Schlünder

    T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder:
    "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 10.12.2007 - 12.12.2007; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x; S. 801 - 804.

    Zusätzliche Informationen

  421. Autor/innen: Tibor Grasser, E360; Ben Kaczer; B. J. O´Sullivan; Gerhard Rzepa; Bernhard Stampfer, E360; Michael Waltl, E360

    T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl:
    "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6.

    Zusätzliche Informationen

  422. Autor/innen: Tibor Grasser, E360; Ben Kaczer; H. Reisinger; Paul-Jürgen Wagner, E360; M. Toledano-Luque

    T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
    "Modeling of the bias temperature instability under dynamic stress and recovery conditions";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (eingeladen); 29.10.2012 - 01.11.2012; in: "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8; S. 1 - 4.

    Zusätzliche Informationen

  423. Autor/innen: Tibor Grasser, E360; Ben Kaczer; H. Reisinger; Paul-Jürgen Wagner, E360; M. Toledano-Luque

    T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
    "On the Frequency Dependence of the Bias Temperature Instability";
    Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  424. Autor/innen: Tibor Grasser, E360; Robert Kosik, E360; C. Jungemann; Hans Kosina, E360; Bernd Meinerzhagen; Siegfried Selberherr, E360

    T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
    "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 36 - 37.

    Zusätzliche Informationen

  425. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Markus Gritsch, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
    "A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 474 - 477.

  426. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Markus Gritsch, E360; Siegfried Selberherr, E360; Helmut Puchner, E360; Sheldon Aronowitz

    T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
    "Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; S. 215 - 218.

  427. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
    "An Impact Ionization Model Including an Explicit Cold Carrier Population";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 572 - 575.

  428. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 46 - 49.

    Zusätzliche Informationen

  429. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 151 - 154.

    Zusätzliche Informationen

  430. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
    Vortrag: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko (eingeladen); 12.02.2001 - 17.02.2001; in: "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8; S. 19 - 30.

  431. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 54 - 57.

    Zusätzliche Informationen

  432. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 109 - 112.

    Zusätzliche Informationen

  433. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 63 - 66.

    Zusätzliche Informationen

  434. Autor/innen: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
    Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; S. 105 - 108.

  435. Autor/innen: Tibor Grasser, E360; B. J. O´Sullivan; Ben Kaczer; J. Franco; Bernhard Stampfer, E360; Michael Waltl, E360

    T. Grasser, B. O´Sullivan, B. Kaczer, J. Franco, B. Stampfer, M. Waltl:
    "CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), virtual; 21.03.2021 - 24.03.2021; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7; S. 1 - 6.

    Zusätzliche Informationen

  436. Autor/innen: Tibor Grasser, E360; Vassil Palankovski, E360; Gerhard Schrom, E360; Siegfried Selberherr, E360

    T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
    "Hydrodynamic Mixed-Mode Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 247 - 250.

    Zusätzliche Informationen

  437. Autor/innen: Tibor Grasser, E360; Rüdiger Quay, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
    "A Global Self-Heating Model for Device Simulation";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 324 - 327.

    Zusätzliche Informationen

  438. Autor/innen: Tibor Grasser, E360; H. Reisinger; Wolfgang Gös, E360; T. Aichinger; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; M. Nelhiebel; J. Franco; Ben Kaczer

    T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer:
    "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 07.12.2009 - 09.12.2009; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), S. 1 - 4.

    Zusätzliche Informationen

  439. Autor/innen: Tibor Grasser, E360; H. Reisinger; K. Rott; M. Toledano-Luque; Ben Kaczer

    T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer:
    "On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), S. 470 - 473.

    Zusätzliche Informationen

  440. Autor/innen: Tibor Grasser, E360; H. Reisinger; P. Wagner; Ben Kaczer; Franz Schanovsky, E360; Wolfgang Gös, E360

    T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös:
    "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 16 - 25.

  441. Autor/innen: Tibor Grasser, E360; K. Rott; H. Reisinger; Paul-Jürgen Wagner, E360; Wolfgang Gös, E360; Franz Schanovsky, E360; Michael Waltl, E360; M. Toledano-Luque; Ben Kaczer

    T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer:
    "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6.

  442. Autor/innen: Tibor Grasser, E360; K. Rott; H. Reisinger; Michael Waltl, E360; J. Franco; Ben Kaczer

    T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
    "A unified perspective of RTN and BTI";
    Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 4A.5.1 - 4A.5.7.

  443. Autor/innen: Tibor Grasser, E360; K. Rott; H. Reisinger; Michael Waltl, E360; Wolfgang Gös, E360

    T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös:
    "Evidence for Defect Pairs in SiON pMOSFETs";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9; S. 228 - 263.

  444. Autor/innen: Tibor Grasser, E360; K. Rott; H. Reisinger; Michael Waltl, E360; Franz Schanovsky, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer:
    "Recent Advances in Understanding Oxide Traps in pMOS Transistors";
    Vortrag: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan (eingeladen); 07.11.2013 - 09.11.2013; in: "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5; S. 95 - 96.

  445. Autor/innen: Tibor Grasser, E360; K. Rott; H. Reisinger; Michael Waltl, E360; Paul-Jürgen Wagner, E360; Franz Schanovsky, E360; Wolfgang Gös, E360; G. Pobegen; Ben Kaczer

    T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer:
    "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 409 - 412.

    Zusätzliche Informationen

  446. Autor/innen: Tibor Grasser, E360; Gerhard Rzepa, E360; Michael Waltl, E360; Wolfgang Gös, E360; K. Rott; Gunnar Andreas Rott; H. Reisinger; J. Franco; Ben Kaczer

    T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer:
    "Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
    Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (eingeladen); 28.05.2014 - 30.05.2014; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9; S. 1 - 4.

    Zusätzliche Informationen

  447. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Electro-Thermal Effects in Mixed-Mode Device Simulation";
    Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 10.10.2000 - 14.10.2000; in: "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6; S. 43 - 52.

  448. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: V. Kumar; P.K. Basu

    T. Grasser, S. Selberherr:
    "Limitations of Hydrodynamic and Energy-Transport Models";
    Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi (eingeladen); 11.12.2001 - 15.12.2001; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (Hrg.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; S. 584 - 591.

  449. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Mixed-Mode Device Simulation";
    Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 14.05.2000 - 17.05.2000; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2000), ISBN: 0-7803-5235-1; S. 35 - 42.

    Zusätzliche Informationen

  450. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Modeling of Negative Bias Temperature Instability";
    Vortrag: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa (eingeladen); 25.06.2006 - 28.06.2006; in: "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), S. 1 - 2.

  451. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Technology CAD: Device Simulation and Characterization";
    Vortrag: Ultra Shallow Junctions Conference, Napa (eingeladen); 22.04.2001 - 26.04.2001; in: "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), S. 4 - 11.

  452. Autor/innen: Tibor Grasser, E360; Siegfried Selberherr, E360; K. Tsueno; H. Masuda

    T. Grasser, S. Selberherr, K. Tsueno, H. Masuda:
    "Mobility Parameter Tuning for Device Simulation";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 336 - 339.

  453. Autor/innen: Tibor Grasser, E360; Bernhard Stampfer, E360; Michael Waltl, E360; Gerhard Rzepa, E360; Karl Rupp, E360; Franz Schanovsky, E360; G. Pobegen; Katja Puschkarsky; H. Reisinger; B. J. O´Sullivan; Ben Kaczer

    T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer:
    "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), S. 2A.2-1 - 2A.2-10.

  454. Autor/innen: Tibor Grasser, E360; Rudolf Strasser, E360; Martin Knaipp, E360; K. Tsuneno; H. Masuda; Siegfried Selberherr, E360

    T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
    "Calibration of a Mobility Model for Quartermicron CMOS Devices";
    Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; S. 75 - 77.

  455. Autor/innen: Tibor Grasser, E360; Rudolf Strasser, E360; Martin Knaipp, E360; K. Tsuneno; H. Masuda; Siegfried Selberherr, E360

    T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
    "Device Simulator Calibration for Quartermicron CMOS Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 93 - 96.

    Zusätzliche Informationen

  456. Autor/innen: Tibor Grasser, E360; Paul-Jürgen Wagner, E360; Philipp Paul Hehenberger, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
    "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
    Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8; S. 6 - 11.

  457. Autor/innen: Tibor Grasser, E360; Paul-Jürgen Wagner, E360; H. Reisinger; T. Aichinger; G. Pobegen; M. Nelhiebel; Ben Kaczer

    T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer:
    "Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S.

    Zusätzliche Informationen

  458. Autor/innen: Tibor Grasser, E360; Michael Waltl, E360; Wolfgang Gös, E360; Yannick Wimmer, E360; A.-M. El-Sayed; A. L. Shluger; Ben Kaczer

    T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
    "On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. 5A.3.1 - 5A.3.8.

    Zusätzliche Informationen

  459. Autor/innen: Tibor Grasser, E360; Michael Waltl, E360; Katja Puschkarsky; Bernhard Stampfer; Gerhard Rzepa, E360; G. Pobegen; H. Reisinger; H Arimura; Ben Kaczer

    T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer:
    "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 6A-2.1 - 6A-2.6.

  460. Autor/innen: Tibor Grasser, E360; Michael Waltl, E360; Gerhard Rzepa, E360; Wolfgang Gös, E360; Yannick Wimmer, E360; Al-Moatasem El-Sayed, E360; A. L. Shluger; H. Reisinger; Ben Kaczer

    T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
    "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
    Vortrag: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. 5A-2-1 - 5A-2-8.

    Zusätzliche Informationen

  461. Autor/innen: Tibor Grasser, E360; Michael Waltl, E360; Yannick Wimmer, E360; Wolfgang Gös, E360; Robert Kosik, E360; Gerhard Rzepa, E360; H. Reisinger; G. Pobegen; Al-Moatasem El-Sayed, E360; A. L. Shluger; Ben Kaczer

    T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
    "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 07.12.2015 - 09.12.2015; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), S. 535 - 538.

    Zusätzliche Informationen

  462. Autor/innen: Alexander Grill; E. Bury; Jakob Michl, E360; S. E. Tyaginov; D Linten; Tibor Grasser, E360; Bertrand Parvais; Ben Kaczer; Michael Waltl, E360; I Radu

    A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu:
    "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 6.

    Zusätzliche Informationen

  463. Autor/innen: Alexander Grill, E360; Gerhard Rzepa, E360; Peter Willibald Lagger; C Ostermaier; Hajdin Ceric, E360; Tibor Grasser, E360

    A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser:
    "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1; S. 41 - 45.

    Zusätzliche Informationen

  464. Autor/innen: Alexander Grill, E360; Bernhard Stampfer; Michael Waltl, E360; Ki-Sik Im; J.-H. Lee; C Ostermaier; Hajdin Ceric, E360; Tibor Grasser, E360

    A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser:
    "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 3B-5.1 - 3B-5.5.

    Zusätzliche Informationen

  465. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, C. Fischer, S. Selberherr:
    "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 25.10.2000 - 27.10.2000; in: "Proceedings EUROSOI 2000", (2000), S. 1 - 4.

  466. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "A Simulation Study of Partially Depleted SOI MOSFETs";
    Vortrag: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 25.03.2001 - 29.03.2001; in: "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1; S. 181 - 186.

  467. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 195 - 198.

    Zusätzliche Informationen

  468. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: V. Kumar; P.K. Basu

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
    Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi; 11.12.2001 - 15.12.2001; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (Hrg.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; S. 664 - 667.

  469. Autor/innen: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360; T. Linton; S. Singh; S. Yu; M. Giles

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
    "The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 544 - 547.

  470. Autor/innen: P. Grubmair; Predrag Habas, E360; Otto Heinreichsberger, E360; Hans Kosina, E360; C. Sala; Siegfried Selberherr, E360

    P. Grubmair, P. Habas, O. Heinreichsberger, H. Kosina, C. Sala, S. Selberherr:
    "Recent Advances in Device Simulation at the TU-Vienna";
    Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 06.10.1992 - 11.10.1992; in: "Proceedings CAS 92 Conference", (1992), S. 347 - 358.

  471. Autor/innen: T.V. Gurov; E. Atanasov; Ivan Dimov; Vassil Palankovski, E360; Sergej Smirnov

    T.V. Gurov, E. Atanasov, I. Dimov, V. Palankovski, S. Smirnov:
    "Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in: "Book of Abstracts", (2005), S. 26 - 27.

  472. Autor/innen: T.V. Gurov; E. Atanassov; Mihail Nedjalkov, E360; Vassil Palankovski, E360

    T.V. Gurov, E. Atanassov, M. Nedjalkov, V. Palankovski:
    "Monte Carlo Method for Modeling of Electron Transport in Quantum Wires";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 13-1 - 13-8.

  473. Autor/innen: T.V. Gurov; Mihail Nedjalkov, E360; Hans Kosina, E360

    T.V. Gurov, M. Nedjalkov, H. Kosina:
    "Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "Book of Abstracts MCM-2003", (2003), S. 10.

  474. Autor/innen: T.V. Gurov; Mihail Nedjalkov, E360; P.A. Whitlock; Hans Kosina, E360; Siegfried Selberherr, E360

    T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
    "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
    Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 27.08.2001 - 31.08.2001; in: "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), S. 27.

  475. Autor/in: Predrag Habas, E360

    P. Habas:
    "Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs";
    Vortrag: Conference on Microelectronics and Optoelectronics, Nis (eingeladen); 26.10.1993 - 28.10.1993; in: "Proceedings Conference on Microelectronics and Optoelectronics", (1993), S. 179 - 188.

  476. Autor/innen: Predrag Habas, E360; Otto Heinreichsberger, E360; Siegfried Selberherr, E360

    P. Habas, O. Heinreichsberger, S. Selberherr:
    "Analysis of the Degradation of n-channel LDD MOSFETs by Numerical Simulation of the Carge-Pumping Experiment";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 691 - 693.

  477. Autor/innen: Predrag Habas, E360; Otto Heinreichsberger, E360; Siegfried Selberherr, E360

    P. Habas, O. Heinreichsberger, S. Selberherr:
    "Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; S. 687 - 690.

    Zusätzliche Informationen

  478. Autor/innen: Predrag Habas, E360; A. Lugbauer; Siegfried Selberherr, E360

    P. Habas, A. Lugbauer, S. Selberherr:
    "Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 135 - 140.

  479. Autor/innen: Predrag Habas, E360; Siegfried Selberherr, E360

    P. Habas, S. Selberherr:
    "A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment";
    Poster: Solid State Devices and Materials Conference (SSDM), Tsukuba; 26.08.1992 - 28.08.1992; in: "Proceedings SSDM 92 Conference", (1992), S. 170 - 172.

  480. Autor/innen: Predrag Habas, E360; Siegfried Selberherr, E360

    P. Habas, S. Selberherr:
    "Numerical Simulation of MOS-Devices with Non-Degenerate Gate";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 161 - 164.

  481. Autor/innen: Michael Hackel, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Hackel, H. Kosina, S. Selberherr:
    "Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 65 - 68.

    Zusätzliche Informationen

  482. Autor/innen: Michael Hackel, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Hackel, H. Kosina, S. Selberherr:
    "Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures";
    Vortrag: International Workshop on Computational Electronics (IWCE), Leeds, UK; 11.08.1993 - 13.08.1993; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), S. 186 - 190.

  483. Autor/innen: Tomás Hadámek, E360; Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in MRAM at Writing: A Finite Element Approach";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 133 - 134.

  484. Autor/innen: Tomás Hadámek, E360; Simone Fiorentini, E360; Mario Bendra, E360-01; Roberto Orio, E360; Wilton Jaciel Loch, E360-01; Nils Petter Jorstad, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov:
    "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach";
    Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022).

  485. Autor/innen: Tomás Hadámek, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    T. Hadámek, W. Goes, S. Selberherr, V. Sverdlov:
    "Modeling Thermal Effects in STT-MRAM";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12.

  486. Autor/innen: Tomás Hadámek, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov:
    "Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 49 - 50.

  487. Autor/innen: Tomás Hadámek, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov:
    "Heating Asymmetry in Magnetoresistive Random Access Memories";
    Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 18.07.2021 - 21.07.2021; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), ISBN: 978-1-950492-55-8; S. 63 - 66.

  488. Autor/innen: W. Hänsch; C. Werner; Siegfried Selberherr, E360

    W. Hänsch, C. Werner, S. Selberherr:
    "A Hot Carrier Analysis Utilizing MINIMOS 3.0";
    Vortrag: International Symposium on VLSI Technology, San Diego; 28.05.1986 - 30.05.1986; in: "Proceedings of the International Symposium on VLSI Technology", (1986), S. 63 - 64.

  489. Autor/innen: Bernhard Haindl, E384; Robert Kosik, E360; Peter Fleischmann, E360; Siegfried Selberherr, E360

    B. Haindl, R. Kosik, P. Fleischmann, S. Selberherr:
    "Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 131 - 134.

    Zusätzliche Informationen

  490. Autor/innen: Stefan Halama, E360; Franz Fasching, E360; Claus Fischer, E360; Hans Kosina, E360; Ernst Leitner, E360; Christoph Pichler, E360; Hubert Pimingstorfer; Helmut Puchner, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360; Martin Stiftinger, E360; Hannes Stippel, E360; Ernst Strasser, E360; Walter Tuppa, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
    "The Viennese Integrated System for Technology CAD Applications";
    Vortrag: Workshop on Technology CAD Systems, Wien (eingeladen); 06.09.1993; in: "Proceedings Technology CAD Systems Workshop", (1993), ISBN: 3-211-82505-3; S. 197 - 236.

    Zusätzliche Informationen

  491. Autor/innen: Stefan Halama, E360; Franz Fasching, E360; Hubert Pimingstorfer; Walter Tuppa, E360; Siegfried Selberherr, E360

    S. Halama, F. Fasching, H. Pimingstorfer, W. Tuppa, S. Selberherr:
    "Consistent User Interface and Task-Level Architecture of a TCAD System";
    Poster: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 237 - 242.

  492. Autor/innen: Stefan Halama, E360; Gerhard Hobler, E362; Karl Wimmer, E360; Siegfried Selberherr, E360

    S. Halama, G. Hobler, K. Wimmer, S. Selberherr:
    "Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen";
    Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), S. 20 - 26.

  493. Autor/innen: Stefan Halama, E360; Siegfried Selberherr, E360

    S. Halama, S. Selberherr:
    "Future Aspects of Process and Device Simulation";
    Vortrag: Semiconductor Engineering and Technology Symposium (SET), Warschau (eingeladen); 12.10.1992 - 14.10.1992; in: "Abstracts SET 92 Conference", (1992), ISBN: 83-01-11293-x; S. 83 - 85.

  494. Autor/innen: Stefan Halama, E360; Karl Wimmer, E360; Gerhard Hobler, E362; Siegfried Selberherr, E360

    S. Halama, K. Wimmer, G. Hobler, S. Selberherr:
    "Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS";
    Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in: "Proceedings NuTech", (1990), S. 3.

  495. Autor/innen: Christian Harlander, E360; Rainer Sabelka, E360; R. Minixhofer; Siegfried Selberherr, E360

    C. Harlander, R. Sabelka, R. Minixhofer, S. Selberherr:
    "Three-Dimensional Transient Electro-Thermal Simulation";
    Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 03.10.1999 - 06.10.1999; in: "Proceedings THERMINIC Workshop", (1999), S. 169 - 172.

  496. Autor/innen: Christian Harlander, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    C. Harlander, R. Sabelka, S. Selberherr:
    "A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 254 - 257.

    Zusätzliche Informationen

  497. Autor/innen: Christian Harlander, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    C. Harlander, R. Sabelka, S. Selberherr:
    "Inductance Calculation in Interconnect Structures";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 416 - 419.

  498. Autor/innen: Christian Harlander, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    C. Harlander, R. Sabelka, S. Selberherr:
    "Three-Dimensional Electro-Thermal Simulation of Interconnect Structures with Temperature-Dependent Permittivity";
    Vortrag: International Intersociety, Electronic Packaging Technical Conference (InterPACK), Kauai; 08.07.2001 - 13.07.2001; in: "The Pacific RIM/International Intersociety, Electronic Packaging Technical/Business Conference & Exhibition", (2001), S. 1 - 2.

  499. Autor/innen: Manfred Harrer; Hans Kosina, E360

    M. Harrer, H. Kosina:
    "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
    Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 24.

  500. Autor/innen: Philipp Paul Hehenberger, E360; T. Aichinger; Tibor Grasser, E360; Wolfgang Gös, E360; Oliver Triebl, E360; Ben Kaczer; M. Nelhiebel

    Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel:
    "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique";
    Poster: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 1033 - 1038.

  501. Autor/innen: Philipp Paul Hehenberger, E360; Wolfgang Gös, E360; Oskar Baumgartner, E360; J. Franco; Ben Kaczer; Tibor Grasser, E360

    Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser:
    "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 11 - 14.

    Zusätzliche Informationen

  502. Autor/innen: Philipp Paul Hehenberger, E360; H. Reisinger; Tibor Grasser, E360

    Ph. Hehenberger, H. Reisinger, T. Grasser:
    "Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 8 - 11.

    Zusätzliche Informationen

  503. Autor/innen: Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; H. Reisinger; Tibor Grasser, E360

    Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
    "Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Athens; 14.09.2009 - 18.09.2009; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2; S. 311 - 314.

  504. Autor/innen: Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; H. Reisinger; Tibor Grasser, E360

    Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
    "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 S.

  505. Autor/innen: Otto Heinreichsberger, E360; Predrag Habas, E360; Philipp Lindorfer, E360; Georg Mayer; Siegfried Selberherr, E360; Martin Stiftinger, E360

    O. Heinreichsberger, P. Habas, P. Lindorfer, G. Mayer, S. Selberherr, M. Stiftinger:
    "Neuere Entwicklungen bei MINIMOS";
    Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in: "Proceedings NuTech 89", (1989), S. 7.

  506. Autor/innen: Otto Heinreichsberger, E360; Predrag Habas, E360; Siegfried Selberherr, E360

    O. Heinreichsberger, P. Habas, S. Selberherr:
    "Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; S. 819 - 822.

    Zusätzliche Informationen

  507. Autor/innen: Otto Heinreichsberger, E360; Siegfried Selberherr, E360

    O. Heinreichsberger, S. Selberherr:
    "Three-Dimensional Transient Device Simulation with MINIMOS";
    Vortrag: Institute for Mathematics and Computer Science Conference (IMACS), Dublin (eingeladen); 22.07.1991 - 26.07.1991; in: "Proceedings IMACS 91 Conference", 4 (1991), S. 1692 - 1694.

  508. Autor/innen: Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360

    O. Heinreichsberger, S. Selberherr, M. Stiftinger:
    "3D MOS Device Simulation on a Connection Machine";
    Vortrag: Conference on Parallel Processing for Scientific Computing, Houston; 25.03.1991 - 27.03.1991; in: "Abstracts SIAM Conf. in Parallel Processing for Scientific Computing", (1991), ISBN: 0-89871-303-x; S. 388 - 393.

  509. Autor/innen: Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360

    O. Heinreichsberger, S. Selberherr, M. Stiftinger:
    "Fast Iterative Solution of Carrier Continuity Equations in 3D MOS/MESFET Simulations";
    Vortrag: Copper Mountain Conference on Iterative Methods, Copper Mountain; 01.04.1990 - 05.04.1990; in: "Proceedings Copper Mountain Conference on Iterative Methods", Book 2 of 4 (1990), S. 1 - 7.

  510. Autor/innen: Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360

    O. Heinreichsberger, S. Selberherr, M. Stiftinger:
    "Massively Parallel Solution of the Three-Dimensional Van Roosbroeck Equations";
    Vortrag: Numerical Simulation Conference, Berlin; 05.05.1991 - 08.05.1991; in: "Abstracts NUMSIM'91", (1991), ISSN: 0933-789x; S. 81 - 88.

  511. Autor/innen: Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360; K. Traar

    O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar:
    "On Preconditioning Non-Symmetric Matrix Iterations";
    Vortrag: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in: "Abstracts Conference on Scientific Computation", (1990), S. 34 - 37.

  512. Autor/innen: Otto Heinreichsberger, E360; Martin Thurner, E360; Siegfried Selberherr, E360

    O. Heinreichsberger, M. Thurner, S. Selberherr:
    "Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 85 - 88.

    Zusätzliche Informationen

  513. Autor/in: Rene Heinzl, E360

    R. Heinzl:
    "Data Structure Properties for Scientific Computing: An Algebraic Topology Library";
    Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5.

  514. Autor/innen: Rene Heinzl, E360; Tibor Grasser, E360

    R. Heinzl, T. Grasser:
    "Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 211 - 214.

    Zusätzliche Informationen

  515. Autor/innen: Rene Heinzl, E360; Georg Mach; Philipp Schwaha, E360; Siegfried Selberherr, E360

    R. Heinzl, G. Mach, P. Schwaha, S. Selberherr:
    "A Performance Test Platform";
    Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 483 - 487.

  516. Autor/innen: Rene Heinzl, E360; Georg Mach; Philipp Schwaha, E360; Siegfried Selberherr, E360

    R. Heinzl, G. Mach, P. Schwaha, S. Selberherr:
    "Labtool - A Managing Software for Computer Courses";
    Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 24.10.2007 - 27.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 488 - 492.

  517. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; C Giani; Siegfried Selberherr, E360

    R. Heinzl, P. Schwaha, C. Giani, S. Selberherr:
    "Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment";
    Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 5 - 13.

  518. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    R. Heinzl, P. Schwaha, S. Selberherr:
    "Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design";
    Vortrag: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in: "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-05-0; S. 100 - 107.

  519. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Michael Spevak, E360; Tibor Grasser, E360

    R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
    "Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds";
    Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 26.10.2005 - 28.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 425 - 429.

  520. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Michael Spevak, E360; Tibor Grasser, E360

    R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
    "Concepts for High Performance Generic Scientific Computing";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 4-1 - 4-9.

  521. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Michael Spevak, E360; Tibor Grasser, E360

    R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
    "Performance Aspects of a DSEL for Scientific Computing with C++";
    Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 03.07.2006 - 07.07.2006; in: "Proceedings of the POOSC Conference", (2006), S. 37 - 41.

  522. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
    "A Parallel Generic Scientific Simulation Environment";
    Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008).

  523. Autor/innen: Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
    "Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
    Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 S.

  524. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360

    R. Heinzl, M. Spevak, P. Schwaha:
    "A Novel High Performance Approach for Technology Computer Aided Design";
    Vortrag: Student Electrical Engineering, Information and Communication Technologies (STUDENT EEICT), Brünn; 27.04.2006; in: "Proceedings of the 12th Conference Student EEICT 2006", Vol.4 (2006), ISBN: 80-214-3163-6; S. 446 - 450.

  525. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
    "A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD";
    Poster: The Nanotechnology Conference and Trade Show, Boston; 07.05.2006 - 11.05.2006; in: "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1; S. 526 - 529.

  526. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
    "A High Performance Generic Scientific Simulation Environment";
    Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 61.

  527. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
    "A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator";
    Vortrag: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in: "2005 PhD Research in Microelectronics and Electronics", Vol. 1 (2005), ISBN: 0-7803-9345-7; S. 175 - 178.

  528. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
    "High Performance Process and Device Simulation with a Generic Environment";
    Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 S.

  529. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
    "Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; S. 173 - 176.

  530. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr:
    "Performance Analysis for High-Precision Interconnect Simulation";
    Vortrag: European Simulation and Modeling Conference (ESMC), Toulouse; 23.10.2006 - 25.10.2006; in: "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9; S. 113 - 116.

  531. Autor/innen: Rene Heinzl, E360; Michael Spevak, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr:
    "A Generic Topology Library";
    Vortrag: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in: "OOPSLA Proceedings", (2006), ISSN: 1652-926x; S. 85 - 93.

  532. Autor/innen: Clemens Heitzinger, E360; Thomas Binder, E360; Siegfried Selberherr, E360

    C. Heitzinger, T. Binder, S. Selberherr:
    "Parallel TCAD Optimization and Parameter Extraction for Computationally Expensive Objective Functions";
    Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 534 - 538.

  533. Autor/innen: Clemens Heitzinger, E360; J. Fugger; O. Häberlen; Siegfried Selberherr, E360

    C. Heitzinger, J. Fugger, O. Häberlen, S. Selberherr:
    "Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 191 - 194.

    Zusätzliche Informationen

  534. Autor/innen: Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Hössinger, S. Selberherr:
    "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; S. 702 - 711.

  535. Autor/innen: Clemens Heitzinger, E360; Ch. Ringhofer; Shaikh Ahmed; Dragica Vasileska

    C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska:
    "Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions";
    Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu; 03.10.2004 - 08.10.2004; in: "Proc. 206th Meeting of the Electrochemical Society", (2004).

  536. Autor/innen: Clemens Heitzinger, E360; Ch. Ringhofer; Shaikh Ahmed; Dragica Vasileska

    C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska:
    "Efficient Simulation of the Full Coulomb Interaction in Three Dimensions";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 24 - 25.

    Zusätzliche Informationen

  537. Autor/innen: Clemens Heitzinger, E360; Ch. Ringhofer; Shaikh Ahmed; Dragica Vasileska

    C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska:
    "On the Efficient Simulation of Electron-Electron Interactions in Nanoscale MOSFETs";
    Poster: Trends in Nanotechnology Conference (TNT), Segovia; 13.09.2004 - 17.09.2004; in: "Proceedings Trends in Nanotechnology 2004", (2004).

  538. Autor/innen: Clemens Heitzinger, E360; Ch. Ringhofer; Siegfried Selberherr, E360

    C. Heitzinger, Ch. Ringhofer, S. Selberherr:
    "Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model";
    Vortrag: Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago; 06.05.2007 - 10.05.2007; in: "211th ECS Meeting", 0947 (2007), ISSN: 1091-8213.

  539. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution";
    Vortrag: International Conference on Microelectronics (MIEL), Nis; 12.05.2002 - 15.05.2002; in: "Proceedings of the International Conference on Microelectronics (MIEL)", 2 (2002), S. 431 - 434.

    Zusätzliche Informationen

  540. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes Using the Level Set Method";
    Vortrag: European Simulation Multiconference (ESM), Darmstadt; 03.06.2002 - 05.06.2002; in: "16th European Simulation Multiconference", (2002), ISBN: 90-77039-07-4; S. 653 - 660.

  541. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "Optimization for TCAD Purposes Using Bernstein Polynomials";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 420 - 423.

    Zusätzliche Informationen

  542. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360; J. Fugger; O. Häberlen

    C. Heitzinger, S. Selberherr, J. Fugger, O. Häberlen:
    "On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 347 - 350.

  543. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Fuad Badrieh; Helmut Puchner, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
    "Feature Scale Simulation of Advanced Etching Processes";
    Vortrag: Meeting of the Electrochemical Society, Physical Electrochemistry, Orlando; 12.10.2003 - 16.10.2003; in: "204th ECS Meeting", (2003), ISBN: 1-56677-398-9; S. 1259.

  544. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; J. Fugger; O. Häberlen; M. Leicht; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, J. Fugger, O. Häberlen, M. Leicht, S. Selberherr:
    "A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm";
    Vortrag: Meeting of the Electrochemical Society, Electrochemical Processing in ULSI and MEMS, San Antonio; 09.05.2004 - 13.05.2004; in: "205th ECS Meeting", (2004), S. 132 - 142.

    Zusätzliche Informationen

  545. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Jong Mun Park, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
    "A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET";
    Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 457 - 460.

  546. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Helmut Puchner, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, H. Puchner, S. Selberherr:
    "Predictive Simulation of Void Formation During the Deposition of Silicon Nitride and Silicon Dioxide Films";
    Vortrag: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; S. 356 - 365.

  547. Autor/innen: Clemens Heitzinger, E360; Alireza Sheikholeslami, E389; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, S. Selberherr:
    "Predictive Simulation of Etching and Deposition Processes Using the Level Set Method";
    Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Prague; 13.10.2002 - 17.10.2002; in: "ChiPPS-2002 Challenges in Predictive Process Simulation", (2002), S. 65 - 66.

  548. Autor/innen: Gerhard Hobler, E362; E. Guerrero; Siegfried Selberherr, E360

    G. Hobler, E. Guerrero, S. Selberherr:
    "Two-Dimensional Modeling of Ion Implantation Induced Point Defects";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 13.11.1986 - 14.11.1986; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1986), S. 10 - 11.

  549. Autor/innen: Gerhard Hobler, E362; Stefan Halama, E360; Karl Wimmer, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    G. Hobler, S. Halama, K. Wimmer, S. Selberherr, H. Pötzl:
    "RTA-Simulations with the 2-D Process Simulator PROMIS";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in: "NUPAD III Techn. Digest", (1990), S. 13 - 14.

  550. Autor/innen: Gerhard Hobler, E362; Erasmus Langer, E360; Siegfried Selberherr, E360

    G. Hobler, E. Langer, S. Selberherr:
    "Two-Dimensional Modeling of Ion-Implantation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 256 - 270.

  551. Autor/innen: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in: "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), S. 225 - 230.

  552. Autor/innen: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988).

  553. Autor/innen: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Verification of Ion Implantation Models by Monte-Carlo Simulations";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), S. 445 - 448.

  554. Autor/innen: Andreas Hössinger, E360; Thomas Binder, E360; Wolfgang Pyka, E360; Siegfried Selberherr, E360

    A. Hössinger, T. Binder, W. Pyka, S. Selberherr:
    "Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 424 - 427.

    Zusätzliche Informationen

  555. Autor/innen: Andreas Hössinger, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    A. Hössinger, J. Cervenka, S. Selberherr:
    "A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 259 - 262.

    Zusätzliche Informationen

  556. Autor/innen: Andreas Hössinger, E360; Erasmus Langer, E360

    A. Hössinger, E. Langer:
    "Parallel Monte Carlo Simulation of Ion Implantation";
    Vortrag: International Conference on Ion Implantation Technology, Cork (eingeladen); 17.09.2000 - 22.09.2000; in: "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), S. 203 - 208.

  557. Autor/innen: Andreas Hössinger, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    A. Hössinger, E. Langer, S. Selberherr:
    "Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator";
    Vortrag: European Simulation Symposium (ESS), Erlangen; 26.10.1999 - 28.10.1999; in: "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x; S. 649 - 651.

  558. Autor/innen: Andreas Hössinger, Silvaco Europe L ...; Paul Manstetten, E360; Georgios Diamantopoulos, E360; Michael Quell, E360; Josef Weinbub, E360

    A. Hössinger, P. Manstetten, G. Diamantopoulos, M. Quell, J. Weinbub:
    "High Performance Computing Aspects in Semiconductor Process Simulation";
    Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (eingeladen); 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 3 - 4.

  559. Autor/innen: Andreas Hössinger, E360; R. Minixhofer; Siegfried Selberherr, E360

    A. Hössinger, R. Minixhofer, S. Selberherr:
    "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 129 - 132.

    Zusätzliche Informationen

  560. Autor/innen: Andreas Hössinger, E360; Mustafa Radi, E360; B. Scholz; T. Fahringer; Erasmus Langer, E360; Siegfried Selberherr, E360

    A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr:
    "Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 103 - 106.

    Zusätzliche Informationen

  561. Autor/innen: Andreas Hössinger, E360; Siegfried Selberherr, E360

    A. Hössinger, S. Selberherr:
    "Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 363 - 366.

  562. Autor/innen: Andreas Hössinger, E360; Siegfried Selberherr, E360; M. Kimura; I. Nomachi; S. Kusanagi

    A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, S. Kusanagi:
    "Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions";
    Vortrag: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 05.05.1999 - 06.05.1999; in: "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", Electrochemical Society, 99-2 (1999), ISBN: 1-56677-224-9; S. 18 - 25.

  563. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, S. Selberherr:
    "Modeling of Intrinsic Stress Effects in Deposited Thin Films";
    Vortrag: EUROSENSORS XX, Göteborg; 17.09.2006 - 20.09.2006; in: "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2; S. 324 - 325.

  564. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, S. Selberherr:
    "Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 383 - 386.

  565. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, S. Selberherr:
    "Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method";
    Vortrag: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; S. 154 - 158.

  566. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Stress Dependent Thermal Oxidation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 183 - 186.

    Zusätzliche Informationen

  567. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
    Vortrag: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 16.10.2005 - 21.10.2005; in: "208th ECS Meeting", (2005), ISSN: 1091-8213; Paper-Nr. 734, 1 S.

  568. Autor/innen: Christian Hollauer, E360; Hajdin Ceric, E360; G. van Barel; A. Witvrouw; Siegfried Selberherr, E360

    Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr:
    "Investigation of Intrinsic Stress Effects in Cantilever Structures";
    Vortrag: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 16.01.2007 - 19.01.2007; in: "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2; Paper-Nr. 151, 4 S.

  569. Autor/innen: Christian Hollauer, E360; Stefan Holzer, E360; Hajdin Ceric, E360; Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr:
    "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts";
    Vortrag: International Congress on Thermal Stresses (TS), Wien; 26.05.2005 - 29.05.2005; in: "Proceedings of The Sixth International Congress on Thermal Stresses", Schriftenreihe der Technischen Universität Wien, Vol. 2 (2005), ISBN: 3-901167-12-9; S. 637 - 640.

  570. Autor/innen: Stefan Holzer, E360; Christian Hollauer, E360; Hajdin Ceric, E360; Markus Karner, E360; Tibor Grasser, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr:
    "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9; S. 154 - 157.

  571. Autor/innen: Stefan Holzer, E360; Christian Hollauer, E360; Hajdin Ceric, E360; Stephan Wagner, E360; Robert Entner, E360; Erasmus Langer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr:
    "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis";
    Poster: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 620 - 623.

  572. Autor/innen: Stefan Holzer, E360; R. Minixhofer; Clemens Heitzinger, E360; Johannes Fellner; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
    "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
    Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 24.09.2003 - 26.09.2003; in: "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202; S. 263 - 268.

  573. Autor/innen: Stefan Holzer, E360; Siegfried Selberherr, E360

    S. Holzer, S. Selberherr:
    "Material Parameter Identification for Interconnect Analysis";
    Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli (eingeladen); 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-946-9; S. 635 - 641.

  574. Autor/innen: Stefan Holzer, E360; Siegfried Selberherr, E360

    S. Holzer, S. Selberherr:
    "Optimization Issue in Interconnect Analysis";
    Vortrag: International Conference on Microelectronics (MIEL), Beograd (eingeladen); 14.05.2006 - 17.05.2006; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; S. 465 - 470.

    Zusätzliche Informationen

  575. Autor/innen: Stefan Holzer, E360; Alireza Sheikholeslami, E360; Markus Karner, E360; Tibor Grasser, E360

    S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser:
    "Comparison of Deposition Models for TEOS CVD Process";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), S. 158 - 159.

  576. Autor/innen: Stefan Holzer, E360; Alireza Sheikholeslami, E360; Stephan Wagner, E360; Clemens Heitzinger, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
    "Optimization and Inverse Modeling for TCAD Applications";
    Vortrag: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 113 - 116.

    Zusätzliche Informationen

  577. Autor/innen: Stefan Holzer, E360; Martin Wagner, E360; Lukas Friembichler, E360; Erasmus Langer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr:
    "A Multi-Purpose Optimization Framework for TCAD Applications";
    Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 76.

  578. Autor/innen: Stefan Holzer, E360; Martin Wagner, E360; Alireza Sheikholeslami, E360; Markus Karner, E360; Gerhard Span; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr:
    "An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications";
    Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in: "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9; S. 239 - 244.

  579. Autor/innen: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Strain Engineering of Single-Layer MoS2";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 314 - 317.

    Zusätzliche Informationen

  580. Autor/innen: R Huang; W. Robl; G. Dehm; Hajdin Ceric, E360; T. Detzel

    R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel:
    "Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 1 - 6.

  581. Autor/innen: R Huang; W. Robl; T. Detzel; Hajdin Ceric, E360

    R. Huang, W. Robl, T. Detzel, H. Ceric:
    "Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing";
    Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 02.05.2010 - 06.05.2010; in: "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; S. 911 - 917.

  582. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; Theresia Knobloch, E360; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; V. V. Fedorov; S. M. Suturin; Michael Stöger-Pollach, E057-02; M. I. Vexler; N. S. Sokolov; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser:
    "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics";
    Vortrag: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 1 - 2.

    Zusätzliche Informationen

  583. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; M.I. Vexler; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; Michael Thesberg, E360; N. S. Sokolov; T. Mueller; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, M. Vexler, D.K Polyushkin, S. Wachter, M. Thesberg, N. S. Sokolov, T. Mueller, T. Grasser:
    "Epitaxial CaF2: a Route towards Scalable 2D Electronics";
    Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 10.06.2019 - 15.06.2019; in: "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), S. 69.

  584. Autor/innen: Yury Illarionov, E360; Markus Bina; S. E. Tyaginov, E360; K. Rott; H. Reisinger; Ben Kaczer; Tibor Grasser, E360

    Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
    "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs";
    Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT13.1 - XT13.6.

  585. Autor/innen: Yury Illarionov, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Grasser:
    "Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China (eingeladen); 02.07.2019 - 05.07.2019; in: "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), S. 1 - 6.

    Zusätzliche Informationen

  586. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, T. Grasser:
    "Where Are the Best Insulators for 2D Field-Effect Transistors?";
    Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual (eingeladen); 10.05.2020 - 14.05.2020; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/844 (2020).

    Zusätzliche Informationen

  587. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Kirby K.H. Smithe; Michael Waltl, E360; R.W. Grady; Dominic Waldhör, E360; Eric Pop; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser:
    "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation";
    Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 150 - 151.

  588. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Michael Waltl, E360; Sayani Majumdar; Miika Soikkeli; Wonjae Kim; Stefan Wachter, E387-01; Dmitry K. Polyushkin, E387-01; Sanna Arpiainen; Mika Prunnila; A. Mueller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser:
    "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N";
    Vortrag: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in: "Proceedings of the Electronic Materials Conference (EMC)", (2020), S. 25.

  589. Autor/innen: Yury Illarionov, E360; Aday J. Molina- Mendoza, E387-01; Michael Waltl, E360; Theresia Knobloch, E360; Marco Mercurio Furchi, E387-01; T. Mueller; Tibor Grasser, E360

    Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser:
    "Reliability of next-generation field-effect transistors with transition metal dichalcogenides";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8; 6 S.

    Zusätzliche Informationen

  590. Autor/innen: Yury Illarionov, E360; Gerhard Rzepa, E360; Michael Waltl, E360; Theresia Knobloch, E360; J.-S. Kim; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
    "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
    Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 28.02.2017 - 02.03.2017; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4; S. 114 - 115.

    Zusätzliche Informationen

  591. Autor/innen: Yury Illarionov, E360; Gerhard Rzepa, E360; Michael Waltl, E360; H. Pandey; S. Kataria; V. Passi; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
    "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
    Vortrag: Device Research Conference, Newark, Delaware, USA; 19.06.2016 - 22.06.2016; in: "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6; S. 89 - 90.

  592. Autor/innen: Yury Illarionov, E360; A.D. Smith; S. Vaziri; M. Ostling; Thomas Müller, E387-01; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
    "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge";
    Vortrag: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in: "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7; S. 29 - 30.

  593. Autor/innen: Yury Illarionov, E360; Kirby K.H. Smithe; Michael Waltl, E360; R.W. Grady; Rupali Ganpat Deshmukh, E165-02; Eric Pop; Tibor Grasser, E360

    Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser:
    "Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio";
    Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 24.06.2018 - 27.06.2018; in: "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0.

    Zusätzliche Informationen

  594. Autor/innen: Yury Illarionov, E360; S. E. Tyaginov, E360; Markus Bina; Tibor Grasser, E360

    Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
    "A method to determine the lateral trap position in ultra-scaled MOSFETs";
    Vortrag: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0; S. 728 - 729.

  595. Autor/innen: Yury Illarionov, E360; B. Uzlu; Theresia Knobloch, E360; A. G. Banshchikov; Viktor Sverdlov, E360; M.I. Vexler; N. S. Sokolov; Michael Waltl, E360; Z. Wang, AMO GmbH, Germany; Daniel Neumaier, AMO GmbH, Germany; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser:
    "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators";
    Vortrag: Device Research Conference (DRC), Columbus, OH; 26.06.2022 - 29.06.2022; in: "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8; S. 121 - 122.

  596. Autor/innen: Yury Illarionov, E360; M.I. Vexler; V. V. Fedorov; S. M. Suturin; N. S. Sokolov; Tibor Grasser, E360

    Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser:
    "Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics";
    Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3; S. 330 - 331.

  597. Autor/innen: Yury Illarionov, E360; M. I. Vexler; V. V. Fedorov; S. M. Suturin; D. V. Isakov; I.V. Grekhov

    Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, D. V. Isakov, I. Grekhov:
    "Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon";
    Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 229.

  598. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
    "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), S. 5A-1-1 - 5A-1-6.

    Zusätzliche Informationen

  599. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; Markus Jech, E360; J.-S. Kim; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser:
    "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; S. 6A-6.1 - 6A-6.6.

    Zusätzliche Informationen

  600. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; J.-S. Kim; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
    "Temperature-dependent Hysteresis in Black Phosphorus FETs";
    Poster: Graphene Week, Warsaw, Poland; 13.06.2016 - 17.06.2016; in: "Proceedings of the 2016 Graphene Week", (2016).

  601. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; A.D. Smith; S. Vaziri; M. Ostling; M Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
    "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
    Vortrag: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3; S. 650 - 651.

  602. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; A.D. Smith; S. Vaziri; M. Ostling; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
    "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", Ieee Xplore, (2015), ISBN: 978-1-4799-6910-4; S. 81 - 84.

    Zusätzliche Informationen

  603. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; A.D. Smith; S. Vaziri; M. Ostling; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
    "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
    Vortrag: Graphene 2015, Bilbao, Spain; 10.03.2015 - 13.03.2015; in: "Abstracts Graphene 2015", (2015), 1 S.

  604. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; A.D. Smith; S. Vaziri; M. Ostling; Thomas Müller, E387-01; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
    "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. XT.2.1 - XT.2.6.

    Zusätzliche Informationen

  605. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; S. Smith; S. Vaziri; M. Ostling; M Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
    "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 172 - 175.

    Zusätzliche Informationen

  606. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; Kirby K.H. Smithe; Eric Pop; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser:
    "Encapsulated MoS2 FETs with Improved Performance and Reliability";
    Vortrag: GRAPCHINA, Nanjing, China; 24.09.2017 - 26.09.2017; in: "Proceedings of the GRAPCHINA 2017", (2017), 1 S.

  607. Autor/innen: Guillermo Indalecio; Hans Kosina, E360

    G. Indalecio, H. Kosina:
    "Monte Carlo Simulation of Electron-electron Interactions in Bulk Silicon";
    Poster: The 12th International Conference on Scientific Computing in Electrical Engineering (SCEE 2018), Taormina; 23.09.2018 - 27.09.2018; in: "Book of Abstracts of The 12th International Conference on Scientific Computing in Electrical Engineering", (2018), S. 97 - 98.

  608. Autor/innen: Markus Jech, E360; Tibor Grasser, E360; Michael Waltl, E360

    M. Jech, T. Grasser, M. Waltl:
    "The Importance of Secondary Generated Carriers in Modeling of Full Bias Space";
    Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online; 06.03.2022 - 09.03.2022; in: "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)", EDTM, (2022), S. 265 - 267.

    Zusätzliche Informationen

  609. Autor/innen: Markus Jech, E360; S. E. Tyaginov; Ben Kaczer; J. Franco; Dominic Jabs; C. Jungemann; Michael Waltl, E360; Tibor Grasser, E360

    M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
    "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019).

    Zusätzliche Informationen

  610. Autor/innen: F. Jimenez-Molinos; A. Palma; Andreas Gehring, E360; Francisco Gamiz; Hans Kosina, E360; Siegfried Selberherr, E360

    F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr:
    "Static and Transient Simulation of Inelastic Trap-Assisted Tunneling";
    Vortrag: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 16.10.2003 - 17.10.2003; in: "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1; S. 65 - 68.

  611. Autor/innen: Werner Jüngling, E360; E. Guerrero; Siegfried Selberherr, E360

    W. Jüngling, E. Guerrero, S. Selberherr:
    "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 144 - 149.

  612. Autor/innen: Werner Jüngling, E360; Gerhard Hobler, E362; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Jüngling, G. Hobler, S. Selberherr, H. Pötzl:
    "Adaptive Grids in Space and Time for Process and Device Simulators";
    Vortrag: Numerical Grid Generation in Computational Fluid Dynamics Conference, Landshut; 14.07.1986 - 17.07.1986; in: "Numerical Grid Generation in Computational Fluid Dynamics Conf.", (1986), ISBN: 0-906674-58-1; S. 729 - 739.

  613. Autor/innen: Werner Jüngling, E360; Peter Pichler; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Comparison of Advanced Models for Coupled Diffusion";
    Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 167 - 169.

  614. Autor/innen: Werner Jüngling, E360; Peter Pichler; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC-Fabrication Steps";
    Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 12.11.1984 - 14.11.1984; in: "Abstracts of the Numerical Simulation of VLSI Devices Conference", (1984), S. 7.

  615. Autor/innen: Werner Jüngling, E360; Peter Pichler; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Spatial and Transient Grids for Process and Device Simulators";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 320 - 325.

  616. Autor/innen: Werner Jüngling, E360; Peter Pichler; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, H. Pötzl:
    "Automation in Process- and Device-Simulators";
    Vortrag: International Conference on Automation, Houston; 10.03.1986 - 12.03.1986; in: "Proceedings of the 1986 International Conference on Automation", (1986), S. 530 - 534.

  617. Autor/innen: Werner Jüngling, E360; Peter Pichler; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, H. Pötzl:
    "ZOMBIE - A Coupled Process-Device Simulator";
    Vortrag: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in: "Abstracts of the International Conference on Modelling and Simulation", 1 (1985), S. 137 - 138.

  618. Autor/innen: Werner Jüngling, E360; Peter Pichler; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, H. Pötzl:
    "ZOMBIE - A Coupled Process-Device Simulator";
    Vortrag: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in: "Proceedings of the International Conference on Modelling and Simulation", 2A (1985), S. 137 - 146.

  619. Autor/innen: Werner Jüngling, E360; Siegfried Selberherr, E360

    W. Jüngling, S. Selberherr:
    "Modeling and Simulation of IC-Fabrication Steps";
    Vortrag: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg (eingeladen); 05.05.1986 - 07.05.1986; in: "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), S. 4.

  620. Autor/innen: C. Jungemann; Tibor Grasser, E360; Burkhard Neinhüs; Bernd Meinerzhagen

    C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
    "Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium";
    Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 25 - 28.

  621. Autor/innen: M Jurkovic; Dagmar Gregusova; S. Hascik; M. Blaho; Karol Cico; Vassil Palankovski, E360; J.-F Carlin; Nicolas Grandjean; Jan Kuzmik, E362

    M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, K. Cico, V. Palankovski, J. Carlin, N. Grandjean, J. Kuzmik:
    "Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT";
    Vortrag: International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan; 14.10.2012 - 19.10.2012; in: "International Workshop on Nitride Semiconductors", (2012), 2 S.

  622. Autor/innen: M Jurkovic; Dagmar Gregusova; S. Hascik; M. Blaho; Marian Molnar, E360; Vassil Palankovski, E360; D Donoval; J.-F Carlin; Nicolas Grandjean; J. Kuzmik

    M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, M. Molnar, V. Palankovski, D. Donoval, J. Carlin, N. Grandjean, J. Kuzmik:
    "GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region";
    Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 30.05.2012 - 01.06.2012; in: "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012), 2 S.

  623. Autor/innen: Nils Petter Jørstad, E360-01; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    N. Jørstad, S. Fiorentini, W. Goes, V. Sverdlov:
    "Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM";
    Vortrag: International MOS-AK Workshop, Silicon Valley, USA; 17.12.2021; in: "Proceedings of the 14th International MOS-AK Workshop", (2021), S. 1.

  624. Autor/innen: Nils Petter Jørstad, E360-01; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    N. Jørstad, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Modeling Interfacial and Bulk Spin-Orbit torques";
    Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022).

  625. Autor/innen: Ben Kaczer; V. V. Afanas´Ev; K. Rott; F. Cerbu; J. Franco; Wolfgang Gös, E360; Tibor Grasser, E360; O. Madia; D.P. Nguyen; A. Stesmans; H. Reisinger; M. Toledano-Luque; P. Weckx

    B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx:
    "Experimental characterization of BTI defects";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom (eingeladen); 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 444 - 450.

    Zusätzliche Informationen

  626. Autor/innen: Ben Kaczer; S. M. Amoroso; Razaidi Hussin; A Asenov; J. Franco; P. Weckx; Ph. J. Roussel; Gerhard Rzepa, E360; Tibor Grasser, E360; N. Horiguchi

    B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi:
    "On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 09.10.2016 - 13.10.2016; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3; 3 S.

  627. Autor/innen: Ben Kaczer; C. S. Chen; J. T. Watt; K. Chanda; P. Weckx; M. Toledano-Luque; G. Groeseneken; Tibor Grasser, E360

    B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser:
    "Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 94 - 97.

  628. Autor/innen: Ben Kaczer; C. Chen; P. Weckx; Ph. J. Roussel; M. Toledano-Luque; M. Cho; J. T. Watt; K. Chanda; G. Groeseneken; Tibor Grasser, E360

    B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser:
    "Maximizing reliable performance of advanced CMOS circuits-A case study";
    Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 2D.4.1 - 2D.4.6.

  629. Autor/innen: Ben Kaczer; J. Franco; M. Cho; Tibor Grasser, E360; Philippe J. Roussel; S. E. Tyaginov, E360; Markus Bina, E360; Yannick Wimmer, E360; Luis Miguel Procel, USFQ; Leonel Trojman, USFQ; F. Crupi; G. Pitner; Vamsi Putcha; P. Weckx; E. Bury; Z. Ji; An De Keersgieter; T. Chiarella; N. Horiguchi; Guido Groeseneken; A. Thean

    B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
    "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 S.

    Zusätzliche Informationen

  630. Autor/innen: Ben Kaczer; J. Franco; M. Toledano-Luque; Ph. J. Roussel; Muhammad Faiz Bukhori; A Asenov; Benedikt Schwarz, E362; Markus Bina; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, G. Groeseneken:
    "The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes";
    Vortrag: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  631. Autor/innen: Ben Kaczer; J. Franco; P. Weckx; Philippe J. Roussel; E. Bury; M. Cho; R. Degraeve; D Linten; G. Groeseneken; H. Kukner; P. Raghavan; F. Catthoor; Gerhard Rzepa, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser:
    "The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria (eingeladen); 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; S. 218 - 225.

    Zusätzliche Informationen

  632. Autor/innen: Ben Kaczer; Tibor Grasser, E360; J. Franco; M. Toledano-Luque; Ph. J. Roussel; G. Groeseneken

    B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken:
    "Recent Trends in Bias Temperature Instability";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava (eingeladen); 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 55.

  633. Autor/innen: Ben Kaczer; Tibor Grasser, E360; J. Martin-Martinez; E. Simoen; M. Aoulaiche; Ph. J. Roussel; G. Groeseneken

    B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken:
    "NBTI from the Perspective of Defect States with Widely Distributed Time Scales";
    Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 55 - 60.

  634. Autor/innen: Ben Kaczer; Tibor Grasser, E360; Ph. J. Roussel; J. Franco; R. Degraeve; L. A. Ragnarsson; E. Simoen; G. Groeseneken; H. Reisinger

    B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger:
    "Origin of NBTI Variability in Deeply Scaled pFETs";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 26 - 32.

  635. Autor/innen: Ben Kaczer; Tibor Grasser, E360; Ph. J. Roussel; J. Martin-Martinez; R. O´Connor; B. J. O´Sullivan; G. Groeseneken

    B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O´Connor, B. O´Sullivan, G. Groeseneken:
    "Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights";
    Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), S. 20 - 27.

  636. Autor/innen: Ben Kaczer; S. Mahato; V. Valduga de Almeida Camargo; M. Toledano-Luque; Ph. J. Roussel; Tibor Grasser, E360; F. Catthoor; P. Dobrovolny; P. Zuber; G.I. Wirth; G. Groeseneken

    B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, Ph. J. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken:
    "Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations";
    Poster: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 5 S.

  637. Autor/innen: Ben Kaczer; Gerhard Rzepa, E360; J. Franco; P. Weckx; A Chasin; Vamsi Putcha; E. Bury; Marko Simicic; Ph. J. Roussel; Geert Hellings; A. Veloso; Ph Matagne; Tibor Grasser, E360; D Linten

    B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten:
    "Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 2D-6.1 - 2D-6.7.

  638. Autor/innen: Ben Kaczer; M. Toledano-Luque; J. Franco; Tibor Grasser, E360; Ph. J. Roussel; V. V. A. Camargo; S. Mahato; E. Simoen; F. Catthoor; G.I. Wirth; G. Groeseneken

    B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken:
    "Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations";
    Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA (eingeladen); 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 32.

  639. Autor/innen: Goran Kaiblinger-Grujin, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
    "A Physically-Based Electron Mobility Model for Silicon Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 312 - 315.

    Zusätzliche Informationen

  640. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360

    G. Kaiblinger-Grujin, H. Kosina:
    "An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations";
    Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 25.

  641. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Christian Köpf, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
    "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
    Vortrag: International Conference on Defects in Semiconductors, Aveiro; 21.07.1997 - 25.07.1997; in: "Proceedings Intl. Conf. on Defects in Semiconductors", Proceedings Part 2, Section 11 (1997), S. 939 - 944.

  642. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation";
    Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; S. M2.4.1.

  643. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors";
    Vortrag: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), S. TA02.

  644. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Electron Mobility in Doped Semiconductors";
    Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 30 - 31.

  645. Autor/innen: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Monte Carlo Simulation of Electron Transport in Doped Silicon";
    Vortrag: High Performance Computing Asia Conference, Seoul; 28.04.1997 - 02.05.1997; in: "Proceedings High Performance Computing Asia 1997 Conf.", (1997), S. 444 - 449.

  646. Autor/innen: Markus Kampl, E360; Hans Kosina, E360

    M. Kampl, H. Kosina:
    "Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands";
    Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 147 - 148.

  647. Autor/innen: Markus Kampl, E360; Hans Kosina, E360; Oskar Baumgartner

    M. Kampl, H. Kosina, O. Baumgartner:
    "Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 293 - 296.

    Zusätzliche Informationen

  648. Autor/innen: Markus Kampl, E360; Hans Kosina, E360; Michael Waltl, E360

    M. Kampl, H. Kosina, M. Waltl:
    "Improved Sampling Algorithms for Monte Carlo Device Simulation";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 53 - 54.

  649. Autor/innen: A Karaivanova; E. Atanassov; T.V. Gurov; Mihail Nedjalkov, E360; Dragica Vasileska; K. Raleva

    A. Karaivanova, E. Atanassov, T.V. Gurov, M. Nedjalkov, D. Vasileska, K. Raleva:
    "Electron-Phonon Interaction in Nanowires: A Monte Carlo Study of the Effect of the Field";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Reading; 18.06.2007 - 21.06.2007; in: "Proceedings of the Seminar on Monte Carlo Methods (MCM)", (2007), S. 23.

  650. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method";
    Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S.

  651. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions";
    Vortrag: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in: "Book of Abstracts", (2013), 1 S.

  652. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 98 - 99.

  653. Autor/innen: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
    "Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons";
    Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 77 - 78.

  654. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices";
    Vortrag: 219th ECS Meeting, Montreal, Canada; 01.05.2011 - 06.05.2011; in: "219th ECS Meeting", (2011), 1 S.

  655. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "An Investigation of ZGNR-Based Transistors";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S.

  656. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications";
    Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S.

    Zusätzliche Informationen

  657. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Thermal Properties of Graphene Antidots";
    Poster: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in: "Abstract Book of the Nanoelectronics Days 2010", (2010), S. 102.

  658. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Transport Gap Engineering in Zigzag Graphene Nanoribbons";
    Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 21.11.2011 - 25.11.2011; in: "Poster Abstracts Book (TNT 2011)", (2011), S. 2.

  659. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, H. Kosina:
    "Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor";
    Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in: "Book of Abstracts", (2012), 1 S.

  660. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, N. Neophytou, H. Kosina:
    "Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor";
    Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting", (2012), 1 S.

  661. Autor/innen: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; Neophytos Neophytou, E360; M. Pazoki; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, N. Neophytou, M. Pazoki, H. Kosina:
    "First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications";
    Vortrag: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 05.12.2011 - 07.12.2011; in: "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5; S. 19 - 22.

  662. Autor/innen: G.G. Kareva; M. I. Vexler; Yury Illarionov, E360

    G.G. Kareva, M. I. Vexler, Yu. Illarionov:
    "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
    Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 25.06.2013 - 28.06.2013; in: "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0; S. 246 - 247.

  663. Autor/innen: Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Wilfried Wessner, E360; Hans Kosina, E360

    G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina:
    "Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 63 - 66.

    Zusätzliche Informationen

  664. Autor/innen: Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Wilfried Wessner, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
    "Analysis of Hole Transport in Arbitrarily Strained Germanium";
    Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1449, 1 S.

  665. Autor/innen: Gerhard Karlowatz, E360; Wilfried Wessner, E360; Hans Kosina, E360

    G. Karlowatz, W. Wessner, H. Kosina:
    "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 4-1 - 4-6.

  666. Autor/innen: Markus Karner, E360; Oskar Baumgartner, E360; Mahdi Pourfath, E360; Martin Vasicek, E360; Hans Kosina, E360

    M. Karner, O. Baumgartner, M. Pourfath, M. Vasicek, H. Kosina:
    "Investigation of a MOSCAP Using NEGF";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S.

  667. Autor/innen: M Karner; Oskar Baumgartner; Zlatan Stanojevic; Franz Schanovsky, E360; G Strof, Global TCAD Solu ...; Christian Kernstock; H.W. Karner; Gerhard Rzepa, E360; Tibor Grasser, E360

    M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser:
    "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9; S. 30.7.1 - 30.7.4.

    Zusätzliche Informationen

  668. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Hans Kosina, E360

    M. Karner, A. Gehring, S. Holzer, H. Kosina:
    "On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2005), S. 33 - 34.

  669. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
    "Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics";
    Vortrag: Meeting of the Electrochemical Society (ECS), Los Angeles; 16.10.2005 - 21.10.2005; in: "208th ECS Meeting", 1119 (2005), ISSN: 1091-8213; 1 S.

  670. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Mahdi Pourfath, E360; Martin Wagner, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
    "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
    Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 255 - 256.

  671. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Martin Wagner, E360; Hans Kosina, E360

    M. Karner, A. Gehring, S. Holzer, M. Wagner, H. Kosina:
    "Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures";
    Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 161 - 162.

  672. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Hans Kosina, E360

    M. Karner, A. Gehring, H. Kosina:
    "Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics";
    Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 97 - 98.

  673. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, H. Kosina, S. Selberherr:
    "Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 35 - 38.

    Zusätzliche Informationen

  674. Autor/innen: Markus Karner, E360; Andreas Gehring, E360; Martin Wagner, E360; Robert Entner, E360; Stefan Holzer, E360; Wolfgang Gös, E360; Martin Vasicek, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
    "VSP-A Gate Stack Analyzer";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), S. 101 - 102.

  675. Autor/innen: Markus Karner, E360; Stefan Holzer, E360; Martin Vasicek, E360; Wolfgang Gös, E360; Martin Wagner, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, S. Holzer, M. Vasicek, W. Gös, M. Wagner, H. Kosina, S. Selberherr:
    "Numerical Analysis of Gate Stacks";
    Vortrag: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1119, 1 S.

  676. Autor/innen: M Karner; Zlatan Stanojevic; Christian Kernstock; Oskar Baumgartner, E360; Hui Wen Cheng-Karner

    M. Karner, Z. Stanojevic, Ch. Kernstock, O. Baumgartner, H. W. Cheng-Karner:
    "Hierarchical TCAD Device Simulation of FinFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 258 - 261.

    Zusätzliche Informationen

  677. Autor/innen: Markus Karner, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Stefan Holzer, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
    "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 314 - 317.

    Zusätzliche Informationen

  678. Autor/innen: Markus Karner, E360; Martin Wagner, E360; Tibor Grasser, E360; Hans Kosina, E360

    M. Karner, M. Wagner, T. Grasser, H. Kosina:
    "A Physically Based Quantum Correction Model for DG MOSFETs";
    Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), S. 104 - 105.

  679. Autor/innen: Wolfgang Kausel, E360; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, G. Nanz, S. Selberherr, H. Pötzl:
    "A New Boundary Condition for Device Simulation Considering Outer Components";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 625 - 636.

  680. Autor/innen: Wolfgang Kausel, E360; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, G. Nanz, S. Selberherr, H. Pötzl:
    "BAMBI - A Transient Two-Dimensional Device Simulator Using Implicit Backward Euler's Method and a Totally Self Adaptive Grid";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988).

  681. Autor/innen: Wolfgang Kausel, E360; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, G. Nanz, S. Selberherr, H. Pötzl:
    "Two-Dimensional Transient Simulation of the Turn-On Behavior of a planar MOS-Transistor";
    Vortrag: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in: "Abstracts of the International Conference on Modelling and Simulation", (1987), S. 50 - 51.

  682. Autor/innen: Wolfgang Kausel, E360; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, G. Nanz, S. Selberherr, H. Pötzl:
    "Two-Dimensional Transient Simulation of the Turn-on Behavior of a planar MOS-Transistor";
    Vortrag: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in: "Proceedings of the International Conference on Modelling and Simulation", A (1987), S. 13 - 24.

  683. Autor/innen: Wolfgang Kausel, E360; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, G. Nanz, S. Selberherr, H. Pötzl:
    "Zweidimensionale transiente Simulation des Einschaltverhaltens eines planaren MOS-Transistors";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in: "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x; S. 100 - 105.

    Zusätzliche Informationen

  684. Autor/innen: Wolfgang Kausel, E360; J.O. Nylander; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl:
    "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 421 - 429.

  685. Autor/innen: A. Kefayati; Mahdi Pourfath, E360; Hans Kosina, E360

    A. Kefayati, M. Pourfath, H. Kosina:
    "A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2";
    Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 7 - 8.

  686. Autor/innen: Christian Kernstock; Zlatan Stanojevic; Oskar Baumgartner, E360; M Karner

    Ch. Kernstock, Z. Stanojevic, O. Baumgartner, M. Karner:
    "Layout-Based TCAD Device Model Generation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 198 - 201.

    Zusätzliche Informationen

  687. Autor/innen: N. Khalil; John Faricelli; D. Bell; Siegfried Selberherr, E360

    N. Khalil, J. Faricelli, D. Bell, S. Selberherr:
    "A Novel Method for Extracting the Two-Dimensional Doping Profile of a Sub-Half Micron MOSFET";
    Vortrag: Symposium on VLSI Technology, Honolulu; 07.06.1994 - 09.06.1994; in: "Proceedings Symposium on VLSI Technology", (1994), ISBN: 0-7803-1921-4; S. 131 - 132.

  688. Autor/innen: N. Khalil; John Faricelli; C.-L. Huang; Siegfried Selberherr, E360

    N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
    "Two-Dimensional Dopant Profiling of Submicron MOSFETs Using Nonlinear Least Squares Inverse Modeling";
    Vortrag: Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park (eingeladen); 20.03.1995 - 22.03.1995; in: "Proceedings Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors", (1995), S. 6.1 - 6.9.

  689. Autor/innen: N. Khalil; Gerd Nanz, E360; R. Rios; Siegfried Selberherr, E360

    N. Khalil, G. Nanz, R. Rios, S. Selberherr:
    "A B-Splines Regression Technique to Determine One-Dimensional MOS Doping Profiles";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x; S. 191 - 194.

  690. Autor/innen: Sang-Cheol Kim; W Bahng; N.-K. Kim; Tesfaye Ayalew, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
    "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
    Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 492 - 493.

    Zusätzliche Informationen

  691. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "A Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination";
    Poster: SPIE Optical Microlithography, Santa Clara, CA, USA; 22.02.1998 - 27.02.1998; in: "Proceedings of SPIE Optical Microlithography", (1998), S. 3334·86.

  692. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Rigorous Three-Dimensional Photolithography Simulation Over Nonplanar Structures";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 347 - 350.

  693. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Photolithography Simulation";
    Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 27 - 31.

  694. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Photoresist Exposure and Development Simulation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 99 - 100.

    Zusätzliche Informationen

  695. Autor/innen: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Simulation of Light-Scattering over Nonplanar Substrates in Photolithography";
    Poster: Electron, Ion and Photon Beam Technology and Nanofabrication Conference, Atlanta; 28.05.1996 - 31.05.1996; in: "Abstracts Electron, Ion and Photon Beam Technology and Nanofabrication Conference", (1996), S. 155 - 156.

  696. Autor/innen: Xaver Klemenschits, E360; Paul Manstetten, E360; Lado Filipovic, E360; Siegfried Selberherr, E360

    X. Klemenschits, P. Manstetten, L. Filipovic, S. Selberherr:
    "Process Simulation in the Browser: Porting ViennaTS using WebAssembly";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 339 - 342.

    Zusätzliche Informationen

  697. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 23 - 27.

    Zusätzliche Informationen

  698. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Fast Volume Evaluation on Sparse Level Sets";
    Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 113 - 114.

  699. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Geometric Advection Algorithm for Process Emulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 59 - 62.

    Zusätzliche Informationen

  700. Autor/innen: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 65 - 66.

  701. Autor/innen: Robert Klima, E360; Tibor Grasser, E360; Thomas Binder, E360; Siegfried Selberherr, E360

    R. Klima, T. Grasser, T. Binder, S. Selberherr:
    "Controlling TCAD Applications with a Dynamic Database";
    Vortrag: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; S. 103 - 112.

  702. Autor/innen: Robert Klima, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Klima, T. Grasser, S. Selberherr:
    "Controlling Scheme of the Device Simulator MINIMOS-NT";
    Vortrag: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; S. 80 - 84.

  703. Autor/innen: Robert Klima, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Klima, T. Grasser, S. Selberherr:
    "Controlling TCAD Applications with an Object-Oriented Dynamic Database";
    Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 161 - 165.

  704. Autor/innen: Robert Klima, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Klima, T. Grasser, S. Selberherr:
    "The Control System of the Device Simulator MINIMOS-NT";
    Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 281 - 284.

  705. Autor/innen: Martin Knaipp, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Knaipp, T. Grasser, S. Selberherr:
    "A Physically Based Substrate Current Simulation";
    Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 196 - 199.

  706. Autor/innen: Martin Knaipp, E360; Siegfried Selberherr, E360

    M. Knaipp, S. Selberherr:
    "A Physically Based Substrate Current Simulation";
    Vortrag: International Conference on VLSI and CAD (ICVC), Seoul; 13.10.1997 - 15.10.1997; in: "Proceedings Intl. Conf. On VLSI and CAD", (1997), S. 558 - 560.

  707. Autor/innen: Martin Knaipp, E360; Siegfried Selberherr, E360

    M. Knaipp, S. Selberherr:
    "Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs";
    Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 37 - 38.

  708. Autor/innen: Martin Knaipp, E360; Thomas Simlinger, E360; Werner Kanert; Siegfried Selberherr, E360

    M. Knaipp, T. Simlinger, W. Kanert, S. Selberherr:
    "Analysis of Leakage Currents in Smart Power Devices";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 645 - 648.

  709. Autor/innen: Theresia Knobloch, E360; Yury Illarionov, E360; Tibor Grasser, E360

    T. Knobloch, Yu. Illarionov, T. Grasser:
    "Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning";
    Vortrag: Graphene Week 2022, Munich, Germany (eingeladen); 05.09.2022 - 09.09.2022; in: "Abstracts of Graphene Week 2022", (2022).

  710. Autor/innen: Theresia Knobloch, E360; Yury Illarionov, E360; Tibor Grasser, E360

    T. Knobloch, Yu. Illarionov, T. Grasser:
    "Finding Suitable Gate Insulators for Reliable 2D FETs";
    Vortrag: International Reliability Physics Symposium (IRPS), Dallas, USA (eingeladen); 27.03.2022 - 31.03.2022; in: "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9; S. 2A.1-1 - 2A.1-10.

    Zusätzliche Informationen

  711. Autor/innen: Theresia Knobloch, E360; Yury Illarionov, E360; B. Uzlu; Michael Waltl, E360; Daniel Neumaier; M Lemme; Tibor Grasser, E360

    T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
    "The Impact of the Graphene Work Function on the Stability of Flexible GFETs";
    Vortrag: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in: "Proceedings of the Electronic Materials Conference (EMC)", (2020).

  712. Autor/innen: Theresia Knobloch, E360; Jakob Michl, E360; Dominic Waldhör, E360; Yury Illarionov, E360; Bernhard Stampfer, E360; Alexander Grill, E360; R. Zhou; P. Wu; Michael Waltl, E360; J Appenzeller; Tibor Grasser, E360

    T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
    "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures";
    Vortrag: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 52 - 53.

  713. Autor/innen: Theresia Knobloch, E360; Gerhard Rzepa, E360; Yury Illarionov, E360; Michael Waltl, E360; Dmitry K. Polyushkin, E387-01; Andreas Pospischil, E387-01; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
    "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
    Vortrag: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA (eingeladen); 01.10.2017 - 05.10.2017; in: "Meeting Abstracts", ECS, MA2017-02(14): 837 (2017), 2 S.

  714. Autor/innen: Theresia Knobloch, E360; Gerhard Rzepa, E360; Yury Illarionov, E360; Michael Waltl, E360; Franz Schanovsky, E360; Markus Jech, E360; Bernhard Stampfer, E360; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
    "Physical Modeling of the Hysteresis in MoS2 Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 11.09.2017 - 14.09.2017; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), S. 284 - 287.

    Zusätzliche Informationen

  715. Autor/innen: Christian Köpf, E360; Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Influence of Dopant Species on Electron Mobility in InP";
    Vortrag: International Conference on Indium Phosphide an Related Materials, Hyannis; 11.05.1997 - 15.05.1997; in: "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), S. 280 - 283.

  716. Autor/innen: Christian Köpf, E360; Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Reexamination of Electron Mobility Dependence on Dopants in GaAs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 304 - 307.

  717. Autor/innen: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys";
    Poster: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), S. TP21.

  718. Autor/innen: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System";
    Vortrag: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1996), S. 675 - 678.

  719. Autor/innen: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System";
    Vortrag: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in: "Abstracts International Symposium on Compound Semiconductors (ISCS)", (1996), S. 30.

  720. Autor/innen: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation";
    Vortrag: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in: "Proceedings Intl.Symposium on Compound Semiconductors", (1995), S. 1255 - 1260.

  721. Autor/innen: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation";
    Vortrag: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in: "Abstracts Intl.Symposium on Compound Semiconductors", (1995), S. 108.

  722. Autor/innen: Robert Kosik, E360; Johann Cervenka, E360; Hans Kosina, E360

    R. Kosik, J. Cervenka, H. Kosina:
    "Numerical Solution of the Constrained Wigner Equation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 189 - 191.

    Zusätzliche Informationen

  723. Autor/innen: Robert Kosik, E360; Johann Cervenka, E360; Hans Kosina, E360

    R. Kosik, J. Cervenka, H. Kosina:
    "Open Boundary Conditions for the Wigner and the Characteristic von Neumann Equation";
    Vortrag: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7; S. 42 - 43.

  724. Autor/innen: Robert Kosik, E360; Tibor Grasser, E360; Robert Entner, E360; Klaus Dragosits, E360

    R. Kosik, T. Grasser, R. Entner, K. Dragosits:
    "On the Highest Order Moment Closure Problem";
    Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 118 - 120.

    Zusätzliche Informationen

  725. Autor/innen: Robert Kosik, E360; Markus Kampl, E360; Hans Kosina, E360

    R. Kosik, M. Kampl, H. Kosina:
    "On the Characteristic Neumann Equation and the Wigner Equation";
    Vortrag: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 26 - 27.

  726. Autor/innen: Robert Kosik, E360; Hans Kosina, E360

    R. Kosik, H. Kosina:
    "A Revised Wigner Function Approach for Stationary Quantum Transport";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 70 - 71.

  727. Autor/innen: Robert Kosik, E360; Michael Thesberg, E360; Josef Weinbub, E360; Hans Kosina, E360

    R. Kosik, M. Thesberg, J. Weinbub, H. Kosina:
    "On the Consistency of the Stationary Wigner Equation";
    Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 30 - 31.

  728. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Advanced Transport Models for Nanodevices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (eingeladen); 02.09.2004 - 04.09.2004; in: "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), S. 35.

    Zusätzliche Informationen

  729. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices";
    Vortrag: The 4th International Nanotech Symposium & Exhibition, Seoul (eingeladen); 30.08.2006 - 01.09.2006; in: "Program Book NANO KOREA 2006", (2006).

  730. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
    Vortrag: International Workshop on Tera- and Nano-Devices: Physics and Modeling, Aizu-Wakamatsu (eingeladen); 16.10.2006 - 19.10.2006; in: "IWTND06 Workbook", (2006), S. 26.

  731. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Quantum Cascade Laser Modeling based on the Pauli Master Equation";
    Vortrag: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien (eingeladen); 03.11.2010 - 05.11.2010; in: "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), S. 6.

  732. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Semiconductor Device Modeling: The Last 30 Years";
    Vortrag: GMe Forum 2011, Vienna, Austria (eingeladen); 14.04.2011 - 15.04.2011; in: "Abstracts of the Invited Presentations", (2011), S. 9.

  733. Autor/in: Hans Kosina, E360

    H. Kosina:
    "The Monte Carlo Method for Semi-classical Charge Transport in Semiconductor Devices";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), S. 26 - 27.

  734. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Transport Modeling for Nanowires and Nanotubes";
    Vortrag: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09.09.2009 - 13.09.2009; in: "Proceedings of the Final FoNE Conference", (2009), S. 35.

  735. Autor/in: Hans Kosina, E360

    H. Kosina:
    "VMC: a Code for Monte Carlo Simulation of Quantum Transport";
    Vortrag: MEL-ARI/NID Workshop, Cork; 23.06.2003 - 25.06.2003; in: "Proc. 12th MEL-ARI/NID Workshop", (2003).

  736. Autor/innen: Hans Kosina, E360; Markus Gritsch, E360; Tibor Grasser, E360; T. Linton; S. Yu; M. Giles; Siegfried Selberherr, E360

    H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M. Giles, S. Selberherr:
    "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
    Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), S. 67.

  737. Autor/innen: Hans Kosina, E360; Manfred Harrer; P. Vogl; Siegfried Selberherr, E360

    H. Kosina, M. Harrer, P. Vogl, S. Selberherr:
    "A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 396 - 399.

    Zusätzliche Informationen

  738. Autor/innen: Hans Kosina, E360; Guillermo Indalecio

    H. Kosina, G. Indalecio:
    "A Two-Particle Monte Carlo Method for Carrier Transport in the Presence of Electron-Electron Scattering";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 93 - 94.

  739. Autor/innen: Hans Kosina, E360; Goran Kaiblinger-Grujin, E360; Siegfried Selberherr, E360

    H. Kosina, G. Kaiblinger-Grujin, S. Selberherr:
    "A New Approach to Ionized-Impurity Scattering";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 205 - 208.

    Zusätzliche Informationen

  740. Autor/innen: Hans Kosina, E360; Markus Kampl, E360

    H. Kosina, M. Kampl:
    "Current Estimation in Backward Monte Carlo Simulations";
    Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 129 - 130.

  741. Autor/innen: Hans Kosina, E360; Markus Kampl, E360

    H. Kosina, M. Kampl:
    "Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 18 - 21.

    Zusätzliche Informationen

  742. Autor/innen: Hans Kosina, E360; Gerhard Klimeck; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
    "Comparison of Numerical Quantum Device Models";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 171 - 174.

    Zusätzliche Informationen

  743. Autor/innen: Hans Kosina, E360; Robert Kosik, E360; Mihail Nedjalkov, E360

    H. Kosina, R. Kosik, M. Nedjalkov:
    "A Hierarchy of Kinetic Equations for Quantum Device Simulation";
    Vortrag: Conference on Applied Mathematics in our Changing World, Berlin (eingeladen); 02.09.2001 - 06.09.2001; in: "Proceedings First SIAM-EMS Conference on Applied Mathematics in our Changing World", (2001), S. 24.

  744. Autor/innen: Hans Kosina, E360; Philipp Lindorfer, E360; Siegfried Selberherr, E360

    H. Kosina, P. Lindorfer, S. Selberherr:
    "Monte-Carlo-Poisson Coupling Using Transport Coefficients";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; S. 53 - 56.

    Zusätzliche Informationen

  745. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
    Vortrag: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), S. 35 - 36.

  746. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Particle Model for Wigner Transport through Tunneling Structures";
    Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 136 - 139.

  747. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 24.

  748. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "An Event Bias Technique for Monte Carlo Device Simulation";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), S. 141 - 143.

  749. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2001 - 10.06.2001; in: "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), S. A-23.

  750. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; S. 190 - 193.

  751. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Solution of the Space-Dependent Wigner Equation Using a Particle Model";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), S. 6.

  752. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 140 - 143.

    Zusätzliche Informationen

  753. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 11 - 14.

  754. Autor/innen: Hans Kosina, E360; Neophytos Neophytou, E360

    H. Kosina, N. Neophytou:
    "Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation";
    Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (eingeladen); 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 419.

  755. Autor/innen: Hans Kosina, E360; Vassil Palankovski, E360

    H. Kosina, V. Palankovski:
    "Mobility Enhancement in Strained CMOS Devices";
    Vortrag: Symposium on Nano Device Technology (SNDT), Hsinchu (eingeladen); 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 101 - 105.

    Zusätzliche Informationen

  756. Autor/innen: Hans Kosina, E360; Heribert Seiler, E360; Viktor Sverdlov, E360

    H. Kosina, H. Seiler, V. Sverdlov:
    "Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 185 - 188.

    Zusätzliche Informationen

  757. Autor/innen: Hans Kosina, E360; Heribert Seiler, E360; Viktor Sverdlov, E360

    H. Kosina, H. Seiler, V. Sverdlov:
    "Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 2 - 3.

  758. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 117 - 122.

  759. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Analysis of Filter Techniques for Monte-Carlo Device Simulation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 251 - 256.

  760. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Device Simulation Demands of Upcoming Microelectronic Devices";
    Vortrag: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba (eingeladen); 17.12.2004 - 22.12.2004; in: "Extended Abstracts of WOFE 2004", (2004), S. 6.

    Zusätzliche Informationen

  761. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs";
    Vortrag: Solid State Devices and Materials Conference (SSDM), Sendai; 22.08.1990 - 24.08.1990; in: "Proceedings Solid State Devices and Materials Conference", (1990), ISBN: 4-930813-41-7; S. 139 - 142.

  762. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Improved Algorithms in Monte Carlo Device Simulation";
    Vortrag: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA (eingeladen); 28.05.1992 - 29.05.1992; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1992), S. 43 - 48.

  763. Autor/innen: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Technology CAD: Process and Device Simulation";
    Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 14.09.1997 - 17.09.1997; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1997), ISBN: 0-7803-3664-x; S. 441 - 450.

    Zusätzliche Informationen

  764. Autor/innen: Hans Kosina, E360; Thomas Simlinger, E360

    H. Kosina, T. Simlinger:
    "Modeling Concepts for Modern Semiconductor Devices";
    Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 11.10.1995 - 14.10.1995; in: "Proceedings CAS 95 Intl. Semiconductor Conference", (1995), ISBN: 0-7803-2647-4; S. 27 - 36.

  765. Autor/innen: Hans Kosina, E360; Viktor Sverdlov, E360; Tibor Grasser, E360

    H. Kosina, V. Sverdlov, T. Grasser:
    "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 357 - 360.

    Zusätzliche Informationen

  766. Autor/innen: Hans Kosina, E360; Viktor Sverdlov, E360; Ch. Ringhofer; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
    "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 36 - 37.

  767. Autor/innen: Hans Kosina, E360; Oliver Triebl, E360; Tibor Grasser, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    H. Kosina, O. Triebl, T. Grasser:
    "Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 317 - 320.

    Zusätzliche Informationen

  768. Autor/innen: Hans Kosina, E360; Christian Troger, E360

    H. Kosina, C. Troger:
    "SPIN - A Schrödinger Poisson Solver Including Nonparabolic Bands";
    Vortrag: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), S. P51.

  769. Autor/innen: Hans Kosina, E360; Karl Wimmer, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
    "Simulation of ULSI Processes and Devices";
    Vortrag: Computer Aided Innovation of New Materials, Tokyo (eingeladen); 28.08.1990 - 31.08.1990; in: "Abstracts Computer Aided Innovation of New Materials 90", (1990), S. 46.

  770. Autor/innen: Hans Kosina, E360; Karl Wimmer, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
    "Simulation of ULSI Processes and Devices";
    Vortrag: Computer Aided Innovation of New Materials, Tokyo, Japan (eingeladen); 28.08.1990 - 31.08.1990; in: "Proceedings Computer Aided Innovation of New Materials 90", (1990), ISBN: 0-444-88864-0; S. 723 - 728.

  771. Autor/innen: G. Kovacs; G. Trattnig; Erasmus Langer, E360

    G. Kovacs, G. Trattnig, E. Langer:
    "Accurate Determination of Material Constants of Piezoelectric Crystals from SAW Velocity Measurements";
    Vortrag: Ultrasonics Symposium, Chicago; 02.10.1988 - 05.10.1988; in: "Proceedings Ultrasonics Symposium", (1988), S. 269 - 272.

  772. Autor/innen: Tejas Krishnamohan; C. Jungemann; Donghyun Kim; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360; Philip Wong; Yoshio Nishi; Krishna Saraswat

    T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, P. Wong, Y. Nishi, K. Saraswat:
    "Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x; S. 937 - 940.

    Zusätzliche Informationen

  773. Autor/innen: Anastasiia Kruv; Ben Kaczer; Alexander Grill; M. Gonzalez; J. Franco; D Linten; Wolfgang Goes, Silvaco; Tibor Grasser, E360; I. De Wolf

    A. Kruv, B. Kaczer, A. Grill, M. Gonzalez, J. Franco, D. Linten, W. Goes, T. Grasser, I. De Wolf:
    "On the Impact of Mechanical Stress on Gate Oxide Trapping";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), S. 1 - 5.

    Zusätzliche Informationen

  774. Autor/innen: Ayoub Lahlalia, E360; Olivier Le Neel; Ravi Shankar; Siegfried Selberherr, E360; Lado Filipovic, E360

    A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
    "Enhanced Sensing Performance of Integrated Gas Sensor Devices";
    Poster: EUROSENSORS, Graz, Austria; 09.09.2018 - 12.09.2018; in: "Proceedings of EUROSENSORS 2018", (2018), ISBN: 978-3-00-025217-4; Paper-Nr. 1508, 5 S.

    Zusätzliche Informationen

  775. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Device Simulation as a Customer of Technology Process Simulation";
    Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (eingeladen); 17.08.1997 - 20.08.1997; in: "Proceedings ChiPPS 97 Conf.", (1997), S. 1.

  776. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Numerical Simulation of MOS Transistors";
    Vortrag: IMA Workshop on Semiconductors, Minneapolis (eingeladen); 22.07.1991 - 02.08.1991; in: "Proceedings IMA Workshop on Semiconductors", (1991), S. 1 - 29.

  777. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Simulation of Microstructures";
    Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 11.10.1994 - 16.10.1994; in: "Proceedings CAS'94", (1994), S. 47 - 56.

  778. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Simulation technologischer Prozesse";
    Vortrag: ÖPG-Jahrestagung, Johannes Kepler Universität Linz (eingeladen); 23.09.1996 - 27.09.1996; in: "Tagungsband ÖPG-Tagung 1996", (1996), S. 130.

  779. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360

    E. Langer, S. Selberherr:
    "Advanced Models, Applications, and Software Systems for High Performance Computing - Applications in Microelectronics";
    Vortrag: Tagung des Forschungsverbund für technisch-wissenschaftliches Hochleistungsrechnen (FORTWIHR), München (eingeladen); 16.03.1998 - 18.03.1998; in: "Abstracts Intl. FORTHWIHR Conf.", (1998), S. 1.

  780. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360

    E. Langer, S. Selberherr:
    "The Status of Process and Device Simulation";
    Vortrag: International Conference on Microelectronics (MIEL), Istanbul (eingeladen); 05.09.1994 - 07.09.1994; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1994), S. 256 - 260.

  781. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360

    E. Langer, S. Selberherr:
    "Three-Dimensional Process Simulation for Advanced Silicon Semiconductor Devices";
    Vortrag: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice (eingeladen); 20.10.1996 - 24.10.1996; in: "Proceedings ASDAM 96 Conf.", (1996), S. 169 - 177.

  782. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360

    E. Langer, S. Selberherr:
    "Transport in MOSFETs, MODFETs and HEMTs";
    Vortrag: International Symposium on Signal, Systems, and Electronics (ISSSE), Paris (eingeladen); 01.09.1992 - 04.09.1992; in: "Proceedings ISSSE 92", (1992), S. 626 - 633.

  783. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "A Consistent Analysis of Bulk-Barrier Diodes";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Toulouse; 14.09.1981 - 17.09.1981; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1981), S. 141 - 142.

  784. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "A Numerical Analysis of Bulk-Barrier Diodes";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8; S. 218 - 222.

  785. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "Numerische Analyse der Bulk-Barrier Diode";
    Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 01.04.1981 - 04.04.1981; in: "Kursunterlagen Grundlagen und Technologie elektronischer Bauelemente", (1981), S. 87 - 93.

  786. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "Numerische Analyse der Bulk-Barrier Diode";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1981), S. 63 - 67.

  787. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; Peter A. Markowich

    E. Langer, S. Selberherr, P. Markowich:
    "Surface and Bulk Wave Velocities in Arbitrary Anisotropic Piezoelectric Materials";
    Vortrag: Ultrasonics Symposium, Atlanta; 31.10.1983 - 02.11.1983; in: "Proceedings of the Ultrasonics Symposium", (1983), S. 1157 - 1160.

  788. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; Peter A. Markowich; Ch. Ringhofer

    E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
    "Ausbreitung elektroakustischer Wellen in Piezoelektrika";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in: "Bericht der Informationstagung Mikroelektronik", (1983), S. 144 - 148.

  789. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; Peter A. Markowich; Ch. Ringhofer

    E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
    "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
    Vortrag: International Conference on Solid State Transducers, Delft; 31.05.1983 - 03.06.1983; in: "Abstracts of Solid State Transducers Conference 1983", (1983), S. 138 - 139.

  790. Autor/innen: Erasmus Langer, E360; Siegfried Selberherr, E360; Ch. Ringhofer; Peter A. Markowich

    E. Langer, S. Selberherr, Ch. Ringhofer, P. Markowich:
    "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
    Vortrag: Ultrasonics Symposium, San Diego; 27.10.1982 - 29.10.1982; in: "Proceedings of the Ultrasonics Symposium", (1982), S. 350 - 353.

  791. Autor/innen: J. Lee; C. Medina-Bailón; S. Berrada; H. Carillo-Nunez; T. Sadi; V. Georgiev; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Asen Asenov

    J. Lee, C. Medina-Bailón, S. Berrada, H. Carillo-Nunez, T. Sadi, V. Georgiev, M. Nedjalkov, S. Selberherr, A. Asenov:
    "Multi-Scale Simulation Study of the Strained Si Nanowire FETs";
    Vortrag: IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA; 14.10.2018 - 17.10.2018; in: "Proceedings of IEEE Nanotechnology Materials and Devices Conference (NMDC)", (2018), ISBN: 978-1-5386-1016-9.

    Zusätzliche Informationen

  792. Autor/innen: Ernst Leitner, E360; Walter Bohmayr, E360; Peter Fleischmann, E360; Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr:
    "3D TCAD at TU Vienna";
    Vortrag: 3-Dimensional Process Simulation Workshop, Erlangen (eingeladen); 05.09.1995; in: "Proceedings 3-Dimensional Process Simulation Workshop", (1995), ISBN: 3-211-82741-2; S. 136 - 161.

    Zusätzliche Informationen

  793. Autor/innen: Ernst Leitner, E360; Siegfried Selberherr, E360

    E. Leitner, S. Selberherr:
    "Adaptive Tessellation for the Three-Dimensional Simulation of Doping Profiles";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 610 - 612.

  794. Autor/innen: Ernst Leitner, E360; Siegfried Selberherr, E360

    E. Leitner, S. Selberherr:
    "Simulation von thermischen Diffusionsprozessen in dreidimensionalen Halbleiterstrukturen";
    Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in: "Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; S. 67 - 70.

  795. Autor/innen: Ernst Leitner, E360; Siegfried Selberherr, E360

    E. Leitner, S. Selberherr:
    "Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 464 - 467.

    Zusätzliche Informationen

  796. Autor/innen: Christoph Lenz, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    C. Lenz, P. Manstetten, A. Hössinger, J. Weinbub:
    "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12.

  797. Autor/innen: Christoph Lenz, E360; Alexander Scharinger, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    C. Lenz, A. Scharinger, A. Hössinger, J. Weinbub:
    "A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes";
    Vortrag: International Conferences on Scientific Computing in Electrical Engineering (SCEE), Eindhoven, The Netherlands; 16.02.2020 - 20.02.2020; in: "Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE)", (2020), S. 99 - 100.

  798. Autor/innen: Christoph Lenz, E360; Alexander Scharinger, E360; Michael Quell, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    C. Lenz, A. Scharinger, M. Quell, P. Manstetten, A. Hössinger, J. Weinbub:
    "Evaluating Parallel Feature Detection Methods for Implicit Surfaces";
    Vortrag: Austrian-Slovenian HPC Meeting (ASHPC), Maribor, Slovenia (Virtual); 31.05.2021 - 02.06.2021; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2021), S. 31.

  799. Autor/innen: Christoph Lenz, E360; Alexander Toifl, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
    "Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 109 - 110.

  800. Autor/innen: Ling Li, E360; Hans Kosina, E360

    L. Li, H. Kosina:
    "An Analytical Model for Organic Thin Film Transistors";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; 19.12.2005 - 21.12.2005; in: "Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2; S. 571 - 574.

  801. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Charge Injection Model for Organic Light-Emitting Diodes";
    Vortrag: International Conference on Organic Electronics (ICOE), Eindhoven; 04.06.2007 - 07.06.2007; in: "International Conference on Organic Electronics", (2007).

  802. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    L. Li, G. Meller, H. Kosina:
    "Charge Injection Model in Organic Light-Emitting Diodes based on a Master Equation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 377 - 380.

    Zusätzliche Informationen

  803. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Doping Dependent Conductivity in Organic Semiconductors";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 204 - 207.

    Zusätzliche Informationen

  804. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Field-Dependent Effective Transport Energy in Organic Semiconductor";
    Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 11.12.2006 - 15.12.2006; in: "3rd Meeting on Molecular Electronics", (2006), S. T2-PC18.

  805. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Percolation Current in Organic Semiconductors";
    Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 161 - 162.

  806. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Temperature and Field-dependence of Hopping Conduction in Organic Semiconductors";
    Poster: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in: "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), S. 112 - 113.

  807. Autor/innen: Philipp Lindorfer, E360; J. Ashworth; Siegfried Selberherr, E360

    P. Lindorfer, J. Ashworth, S. Selberherr:
    "Simulation of GaAs Power and Low Noise Microwave Devices with MINIMOS";
    Vortrag: European Microwave Conference, Stuttgart (eingeladen); 09.09.1991 - 13.09.1991; in: "Proceedings 21st European Microwave Conference", (1991), S. 173 - 179.

  808. Autor/innen: Philipp Lindorfer, E360; Siegfried Selberherr, E360

    P. Lindorfer, S. Selberherr:
    "GaAs-MESFET Simulation with MINIMOS";
    Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; 22.10.1989 - 25.10.1989; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1989), S. 277 - 280.

    Zusätzliche Informationen

  809. Autor/innen: Philipp Lindorfer, E360; Siegfried Selberherr, E360

    P. Lindorfer, S. Selberherr:
    "MESFET Analysis with MINIMOS";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Berlin; 11.09.1989 - 14.09.1989; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1989), ISBN: 3-540-51000-1; S. 92 - 96.

    Zusätzliche Informationen

  810. Autor/innen: Wilton Jaciel Loch, E360-01; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    W.J. Loch, S. Selberherr, V. Sverdlov:
    "Simulation of Novel MRAM Devices with Enhanced Performance";
    Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022).

  811. Autor/innen: Mykola Lukash; Karl Rupp, E360; Siegfried Selberherr, E360

    M. Lukash, K. Rupp, S. Selberherr:
    "Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs";
    Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1; 7 S.

  812. Autor/innen: Georg Mach; Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    G. Mach, R. Heinzl, P. Schwaha, F. Stimpfl, J. Weinbub, S. Selberherr:
    "A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms";
    Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1647 - 1650.

  813. Autor/innen: J. Machek; Siegfried Selberherr, E360

    J. Machek, S. Selberherr:
    "A Novel Finite-Element Approach to Device Modeling";
    Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 9.

  814. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 225 - 228.

  815. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S.

  816. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements";
    Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 29.04.2012 - 04.05.2012; in: "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 S.

  817. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 17.09.2012 - 21.09.2012; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2; S. 254 - 257.

    Zusätzliche Informationen

  818. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Memristive Charge- and Flux-Based Sensors";
    Vortrag: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 12.06.2012 - 15.06.2012; in: "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9; 4 S.

  819. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque";
    Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in: "Book of Abstracts", (2012), S. P-6.

  820. Autor/innen: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "State Drift Optimization of Memristive Stateful IMP Logic Gates";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 243 - 244.

  821. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
    Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 19.06.2014 - 21.06.2014; in: "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), S. 26.

  822. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Design and Applications of Magnetic Tunnel Junction Based Logic Circuits";
    Vortrag: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 24.06.2013 - 27.06.2013; in: "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4; S. 157 - 160.

    Zusätzliche Informationen

  823. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "High Performance MRAM-Based Stateful Logic";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 117 - 120.

    Zusätzliche Informationen

  824. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates";
    Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 68 - 69.

  825. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications";
    Vortrag: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in: "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8; Paper-Nr. 26-27, 2 S.

    Zusätzliche Informationen

  826. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates";
    Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 244 - 245.

  827. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 163 - 166.

    Zusätzliche Informationen

  828. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration";
    Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in: "Proceedings of the International Conference on Nanoscale Magnetism", (2013), S. 208.

  829. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications";
    Vortrag: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada (eingeladen); 17.07.2013 - 19.07.2013; in: "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5; 1 S.

  830. Autor/innen: Alexander Makarov, E360; Ben Kaczer; Philippe Roussel; A Chasin; Alexander Grill, E360; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
    "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3.

    Zusätzliche Informationen

  831. Autor/innen: Alexander Makarov, E360; Ben Kaczer; Philippe Roussel; A Chasin; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed, E360; Markus Jech, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
    "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs";
    Vortrag: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), S. 609 - 610.

  832. Autor/innen: Alexander Makarov, E360; Ben Kaczer; Philippe Roussel; A Chasin; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed, E360; Markus Jech, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
    "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9; S. 262 - 265.

    Zusätzliche Informationen

  833. Autor/innen: Alexander Makarov, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Modeling Spin-Based Electronic Devices";
    Vortrag: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA (eingeladen); 10.03.2014 - 14.03.2014; in: "Book of Abstracts", (2014), 1 S.

  834. Autor/innen: Alexander Makarov, E360; Philippe Roussel; Erik Bury; Michiel Vandemaele; Alessio Spessot; Dimitri Linten; Ben Kaczer; S. E. Tyaginov, E360

    A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
    "On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), ISBN: 978-1-7281-2203-8.

    Zusätzliche Informationen

  835. Autor/innen: Alexander Makarov, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    A. Makarov, S. Selberherr, V. Sverdlov:
    "Emerging Non-Volatile Memories for Ultra-Low Power Applications";
    Vortrag: Informationstagung Mikroelektronik (ME), Vienna, Austria (eingeladen); 23.04.2012 - 24.04.2012; in: "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7; S. 21 - 24.

  836. Autor/innen: Alexander Makarov, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    A. Makarov, S. Selberherr, V. Sverdlov:
    "Modeling of Advanced Memories";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (eingeladen); 17.11.2011 - 18.11.2011; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 S.

    Zusätzliche Informationen

  837. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; D. Kryzhanovsky; M. Girkin; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr:
    "Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method";
    Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 28.03.2011 - 01.04.2011; in: "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 S.

  838. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
    Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 18.09.2011 - 22.09.2011; in: "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7; S. 444.

  839. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
    Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5; 2 S.

  840. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
    Vortrag: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 S.

  841. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
    Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), S. 238.

  842. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
    Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 S.

  843. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
    Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 01.09.2013 - 04.09.2013; in: "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), S. 101.

  844. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
    Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S.

  845. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
    "Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
    Vortrag: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 24.10.2011 - 26.10.2011; in: "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3; S. 177 - 181.

  846. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
    Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 35 - 38.

    Zusätzliche Informationen

  847. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; S. 396 - 399.

  848. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
    Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 S.

  849. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
    Vortrag: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 01.11.2013 - 02.11.2013; in: "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), S. 7.

  850. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
    Vortrag: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0; S. 796 - 797.

  851. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Fast Switching STT-MRAM Cells for Future Universal Memory";
    Vortrag: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico (eingeladen); 17.12.2013 - 20.12.2013; in: "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 S.

  852. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 186 - 189.

    Zusätzliche Informationen

  853. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 02.12.2012 - 07.12.2012; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0; S. 21.

  854. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
    Vortrag: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in: "Proceedings of the International Conference on Nanoscale Magnetism", (2013), S. 69.

  855. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer";
    Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 25.09.2012 - 27.09.2012; in: "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 S.

  856. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ";
    Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; S. 338 - 339.

  857. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 225 - 226.

  858. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Modeling Emerging Non-Volatile Memories: Current Trends and Challenges";
    Vortrag: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 01.04.2012 - 02.04.2012; in: "Physics Procedia", (2012), S. 99 - 104.

    Zusätzliche Informationen

  859. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations";
    Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 141.

  860. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
    Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), S. B-39.

  861. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Monte Carlo Simulation of Bipolar Resistive Switching Memories";
    Vortrag: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in: "Proceedings of the Nanoelectronics Days 2010", (2010), S. 22.

  862. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "New Trends in Microelectronics: Towards an Ultimate Memory Concept";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico (eingeladen); 14.03.2012 - 17.03.2012; in: "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6; 2 S.

    Zusätzliche Informationen

  863. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Recent Developments in Advanced Memory Modeling";
    Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 13.05.2012 - 16.05.2012; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0235-7; S. 49 - 52.

    Zusätzliche Informationen

  864. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Reduction of the Switching Current in Spin Transfer Torque Random Access Memory";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 25.06.2012 - 29.06.2012; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), S. 49.

  865. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 237 - 240.

    Zusätzliche Informationen

  866. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 309 - 312.

  867. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 25.08.2013 - 29.08.2013; in: "Proceedings of SPIE Spintronics", (2013), S. OP108-86.

  868. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 74 - 75.

  869. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution";
    Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. H4.

  870. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 229 - 232.

  871. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 267 - 270.

    Zusätzliche Informationen

  872. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in: "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), S. 51.

  873. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells";
    Vortrag: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 13.05.2018 - 17.05.2018; in: "Proceedings of the 233rd ECS Meeting (ECS)", 85/213 (2018), ISSN: 2151-2043.

  874. Autor/innen: Alexander Makarov, E360; Viktor Sverdlov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Silicon Spintronics";
    Vortrag: International Conference on Electronic Materials (ICEM), Singapur (eingeladen); 04.07.2016 - 08.07.2016; in: "Proceedings of the ICEM 2016", (2016), 1 S.

  875. Autor/innen: Alexander Makarov, E360; S. E. Tyaginov, E360; Ben Kaczer; Markus Jech, E360; A Chasin; Alexander Grill, E360; Geert Hellings; M.I. Vexler; D Linten; Tibor Grasser, E360

    A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser:
    "Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 02.12.2017 - 06.12.2017; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9; S. 310 - 313.

    Zusätzliche Informationen

  876. Autor/innen: Alexander Makarov, E360; Josef Weinbub, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr:
    "First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory";
    Vortrag: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; S. 181 - 186.

  877. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "A Novel Method of SOT-MRAM Switching";
    Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015).

  878. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
    Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2015), ISBN: 978-4-86348-514-3; S. 140 - 141.

  879. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
    Vortrag: Iberchip Workshop (IWS), Montevideo, Uruguay (eingeladen); 24.02.2015 - 27.02.2015; in: "Proceedings of 21st Iberchip Worshop", 23 (2015).

  880. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
    Vortrag: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in: "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8; S. 166.

  881. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "New Design of Spin-Torque Nano-Oscillators";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 30.11.2014 - 05.12.2014; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1; S. 63.

  882. Autor/innen: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
    Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 12.10.2015 - 14.10.2015; in: "Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), S. 105 - 106.

  883. Autor/innen: Negin Manavizadeh; Mahdi Pourfath, E360; Farshid Raissi; E. Asl-Soleimani

    N. Manavizadeh, M. Pourfath, F. Raissi, E. Asl-Soleimani:
    "A Comprehensive Study of Nanoscale Field Effect Diodes";
    Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S.

    Zusätzliche Informationen

  884. Autor/innen: Paul Manstetten, E360; Luiz Felipe Aguinsky, E360; Siegfried Selberherr, E360; Josef Weinbub, E360

    P. Manstetten, L.F. Aguinsky, S. Selberherr, J. Weinbub:
    "High-Performance Ray Tracing for Nonimaging Applications";
    Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 20.

  885. Autor/innen: Paul Manstetten, E360; Georgios Diamantopoulos, E360; Lukas Gnam, E360; Luiz Felipe Aguinsky, E360; Michael Quell, E360; Alexander Toifl, E360; Alexander Scharinger, E360; Andreas Hössinger, Silvaco Europe L ...; Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport";
    Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 13.

  886. Autor/innen: Paul Manstetten, E360; Lado Filipovic, E360; Andreas Hössinger, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
    "Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 68 - 69.

  887. Autor/innen: Paul Manstetten, E360; Lado Filipovic, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
    "Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 265 - 268.

    Zusätzliche Informationen

  888. Autor/innen: Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr:
    "Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 73 - 76.

    Zusätzliche Informationen

  889. Autor/innen: Paul Manstetten, E360; Vito Simonka, E360; Georgios Diamantopoulos, E360; Lukas Gnam, E360; Alexander Makarov, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub:
    "Computational and Numerical Challenges in Semiconductor Process Simulation";
    Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 46.

  890. Autor/innen: Peter A. Markowich; Christian Schmeiser; Siegfried Selberherr, E360

    P. Markowich, Ch. Schmeiser, S. Selberherr:
    "Numerical Methods in Semiconductor Device Simulation";
    Vortrag: Numerical Methods and Approximation Theory, Nis; 18.08.1987 - 21.08.1987; in: "Numerical Methods and Approximation Theory", (1987), S. 287 - 299.

  891. Autor/innen: Peter A. Markowich; Siegfried Selberherr, E360

    P. Markowich, S. Selberherr:
    "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
    Vortrag: Segundas Jornadas LatinoAmericanas de Matematica Aplicada, Rio de Janeiro; 12.12.1983 - 16.12.1983; in: "Abstracts Segundas Jornadas LatinoAmericanas de Matematica Aplicada", (1983).

  892. Autor/innen: Peter A. Markowich; Siegfried Selberherr, E360

    P. Markowich, S. Selberherr:
    "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
    Vortrag: International Conference on Boundary and Interior Layers (BAIL), Dublin (eingeladen); 20.06.1984 - 22.06.1984; in: "Abstracts of the International Conference on Boundary and Interior Layers", (1984), S. 4.

  893. Autor/innen: Peter A. Markowich; Siegfried Selberherr, E360

    P. Markowich, S. Selberherr:
    "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
    Vortrag: SIAM Summer Meeting, Seattle; 16.07.1984 - 20.07.1984; in: "Abstracts of SIAM Summer Meeting", (1984), S. 67.

  894. Autor/innen: Peter A. Markowich; Siegfried Selberherr, E360

    P. Markowich, S. Selberherr:
    "Steady State Semiconductor Device Modelling - A State of the Art Report";
    Vortrag: International Conference on Advances in Circuit and Systems, Bejing; 10.06.1985 - 12.06.1985; in: "Proceedings of the International Conference on Advances in Circuit and Systems", (1985), ISBN: 9971-978-35-0; S. 444 - 447.

  895. Autor/innen: Rui Martins, E360; Wolfgang Pyka, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
    "Modeling Integrated Circuit Interconnections";
    Vortrag: International Conference on Microelectronics and Packaging, Curitiba; 10.08.1998 - 14.08.1998; in: "Proceedings XIII SBMicro, Intl. Conf. on Microelectronics and Packaging", (1998), S. 144 - 151.

  896. Autor/innen: Rui Martins, E360; Rainer Sabelka, E360; Wolfgang Pyka, E360; Siegfried Selberherr, E360

    R. Martins, R. Sabelka, W. Pyka, S. Selberherr:
    "Rigorous Capacitance Simulation of DRAM Cells";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 69 - 72.

    Zusätzliche Informationen

  897. Autor/innen: Rui Martins, E360; Siegfried Selberherr, E360

    R. Martins, S. Selberherr:
    "Layout Data in TCAD Frameworks";
    Vortrag: European Simulation Multiconference (ESM), Budapest; 02.06.1996 - 06.06.1996; in: "Proceedings European Simulation Multiconference", (1996), ISBN: 1-56555-097-8; S. 1122 - 1126.

  898. Autor/innen: Rui Martins, E360; Siegfried Selberherr, E360; F. Vaz

    R. Martins, S. Selberherr, F. Vaz:
    "A CMOS IC for Portable EEG Acquisition Systems";
    Vortrag: Instrumentation and Measurement Technology Conference, St. Paul; 18.05.1998 - 21.05.1998; in: "Proceedings Instrumentation and Measurement Technology Conf.", (1998), ISBN: 0-7803-4797-8; S. 1406 - 1410.

  899. Autor/innen: C. Medina-Bailón; T. Sadi; Mihail Nedjalkov, E360; J. Lee; S. Berrada; H. Carillo-Nunez; Vihar Georgiev; Siegfried Selberherr, E360; A Asenov

    C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
    "Impact of the Effective Mass on the Mobility in Si Nanowire Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 297 - 300.

    Zusätzliche Informationen

  900. Autor/innen: C. Medina-Bailón; T. Sadi; Mihail Nedjalkov, E360; J. Lee; S. Berrada; H. Carillo-Nunez; V. Georgiev; Siegfried Selberherr, E360; A Asenov

    C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
    "Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 15 - 16.

  901. Autor/innen: Gregor Meller, E360; Ling Li, E360; Stefan Holzer, E360; Hans Kosina, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    G. Meller, L. Li, S. Holzer, H. Kosina:
    "Dynamic Monte Carlo Simulation of an Amorphous Organic Device";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 373 - 376.

    Zusätzliche Informationen

  902. Autor/innen: Gregor Meller, E360; Ling Li, E360; Stefan Holzer, E360; Hans Kosina, E360

    G. Meller, L. Li, S. Holzer, H. Kosina:
    "Electron Kinetics in Disordered Organic Semiconductors";
    Poster: ACS/IEEE/MRS Annual Organic Microelectronics Workshop, Toronto; 09.07.2006 - 12.07.2006; in: "Abstracts 2nd Annual Organic Microelectronics Workshop", (2006), S. 42.

  903. Autor/innen: Gregor Meller, E360; Ling Li, E360; Stefan Holzer, E360; Hans Kosina, E360

    G. Meller, L. Li, S. Holzer, H. Kosina:
    "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
    Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in: "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x; S. 1 - 2.

  904. Autor/innen: Gregor Meller, E360; Ling Li, E360; Hans Kosina, E360

    G. Meller, L. Li, H. Kosina:
    "Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors";
    Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 19.12.2005 - 21.12.2005; in: "Second Meeting on Molecular Electronics", (2005), S. 107.

  905. Autor/innen: Gregor Meller, E360; Ling Li, E360; Hans Kosina, E360

    G. Meller, L. Li, H. Kosina:
    "Monte Carlo Simulation of Molecularly Doped Organic Semiconductors";
    Vortrag: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in: "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), S. 44 - 45.

  906. Autor/innen: Gregor Meller, E360; Siegfried Selberherr, E360

    G. Meller, S. Selberherr:
    "Simulation of Injection Currents into Disordered Molecular Conductors";
    Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 19.07.2017 - 21.07.2017; in: "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017).

  907. Autor/innen: Jakob Michl, E360; Alexander Grill; Dieter Claes; Gerhard Rzepa; Ben Kaczer; D Linten; I Radu; Tibor Grasser, E360; Michael Waltl, E360

    J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl:
    "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.05.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 6.

    Zusätzliche Informationen

  908. Autor/innen: Jakob Michl, E360; Alexander Grill, E360; Dominic Waldhör, E360; Christian Schleich, E360; Theresia Knobloch, E360; E. Ioannidis; H. Enichlmair; R. Minixhofer; Ben Kaczer; Bertrand Parvais; Bogdan Govoreanu; I Radu; Tibor Grasser, E360; Michael Waltl, E360

    J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
    "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 11.12.2021 - 15.12.2021; in: "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), S. 31.3.1 - 31.3.3.

    Zusätzliche Informationen

  909. Autor/innen: Diego Milardovich, E360; Markus Jech, E360; Dominic Waldhör, E360; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360

    D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser:
    "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 239 - 242.

    Zusätzliche Informationen

  910. Autor/innen: Diego Milardovich, E360; Markus Jech, E360; Dominic Waldhör, E360; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360

    D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser:
    "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide";
    Vortrag: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 138.

  911. Autor/innen: Diego Milardovich, E360; Markus Jech, E360; Dominic Waldhör, E360; Michael Waltl, E360; Tibor Grasser, E360

    D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser:
    "Machine Learning Prediction of Formation Energies in a-SiO2";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 339 - 342.

    Zusätzliche Informationen

  912. Autor/innen: Diego Milardovich, E360; Dominic Waldhör, E360; Markus Jech, E360; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360

    D. Milardovich, D. Waldhör, M. Jech, A.-M. El-Sayed, T. Grasser:
    "Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 61 - 62.

  913. Autor/innen: Richard T. Mills; Mark Adams; Jed Brown; Maurice Fabien; Tobin Isaac; Matthew Knepley; Karl Rupp, E360; Barry Smith; H Zhang

    R. Mills, M. Adams, J. Brown, M. Fabien, T. Isaac, M. Knepley, K. Rupp, B. Smith, H. Zhang:
    "Experiences, Optimizations, and Future Directions with Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor";
    Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 370 - 371.

  914. Autor/innen: Goran Milovanovic, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    G. Milovanovic, O. Baumgartner, H. Kosina:
    "Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach";
    Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 05.09.2010 - 09.09.2010; in: "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), S. 140 - 141.

  915. Autor/innen: Goran Milovanovic, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    G. Milovanovic, O. Baumgartner, H. Kosina:
    "Simulation of Quantum Cascade Lasers using Robin Boundary Conditions";
    Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; S. 7 - 8.

  916. Autor/innen: Goran Milovanovic, E360; Hans Kosina, E360

    G. Milovanovic, H. Kosina:
    "Nonparabolicity Effects in Quantum Cascade Lasers";
    Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 189 - 192.

    Zusätzliche Informationen

  917. Autor/innen: Goran Milovanovic, E360; Hans Kosina, E360

    G. Milovanovic, H. Kosina:
    "Valence Band Deformation Potentials in Semiconductors";
    Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in: "Abstract Book", (2008), S. 215 - 216.

  918. Autor/innen: R. Minixhofer; Stefan Holzer, E360; Clemens Heitzinger, E360; Johannes Fellner; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
    "Optimization of Electrothermal Material Parameters Using Inverse Modeling";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 363 - 366.

  919. Autor/innen: R. Minixhofer; G. Röhrer; Siegfried Selberherr, E360

    R. Minixhofer, G. Röhrer, S. Selberherr:
    "Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication";
    Vortrag: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; S. 70 - 74.

  920. Autor/innen: Robert Mlekus, E360; C. Ledl; Ernst Strasser, E360; Siegfried Selberherr, E360

    R. Mlekus, C. Ledl, E. Strasser, S. Selberherr:
    "Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 50 - 53.

    Zusätzliche Informationen

  921. Autor/innen: Robert Mlekus, E360; Siegfried Selberherr, E360

    R. Mlekus, S. Selberherr:
    "An Object-Oriented Approach to the Management of Models";
    Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 53 - 56.

  922. Autor/innen: Robert Mlekus, E360; Siegfried Selberherr, E360

    R. Mlekus, S. Selberherr:
    "Object-Oriented Algorithm and Model Management";
    Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 437 - 441.

  923. Autor/innen: Robert Mlekus, E360; Siegfried Selberherr, E360

    R. Mlekus, S. Selberherr:
    "Object-Oriented Management of Algorithms and Models";
    Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 601 - 605.

  924. Autor/innen: Marian Molnar, E360; Gesualdo Donnarumma, E360; Vassil Palankovski, E360; J. Kuzmik; D Donoval; J Kovac; Siegfried Selberherr, E360

    M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
    "Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs";
    Vortrag: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 20.06.2012 - 22.06.2012; in: "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), S. 190 - 194.

  925. Autor/innen: Marian Molnar, E360; Gesualdo Donnarumma, E360; Vassil Palankovski, E360; J. Kuzmik; D Donoval; J Kovac; Siegfried Selberherr, E360

    M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
    "Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs";
    Vortrag: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 11.11.2012 - 15.11.2012; in: "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3; S. 55 - 58.

    Zusätzliche Informationen

  926. Autor/innen: Marian Molnar, E360; Vassil Palankovski, E360; D Donoval; J. Kuzmik; J Kovac; A Chvala; J Marek; P. Pribytny; Siegfried Selberherr, E360

    M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
    "Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation";
    Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 26.05.2013 - 29.05.2013; in: "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0; S. 135 - 136.

  927. Autor/innen: Marian Molnar, E360; Vassil Palankovski, E360; D Donoval; J. Kuzmik; J Kovac; A Chvala; J Marek; P. Pribytny; Siegfried Selberherr, E360

    M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
    "Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures";
    Vortrag: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 02.06.2013 - 05.06.2013; in: "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3; S. 48 - 51.

  928. Autor/innen: Mahdi Moradinasab, E360; Hossein Karamitaheri, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Moradinasab, H. Karamitaheri, M. Pourfath, H. Kosina:
    "On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors";
    Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in: "Book of Abstracts", (2012), 1 S.

  929. Autor/innen: Mahdi Moradinasab, E360; Hamed Nematian; M. Noei; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour, H. Kosina:
    "Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 249 - 250.

  930. Autor/innen: Mahdi Moradinasab, E360; Hamed Nematian; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
    "Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors";
    Vortrag: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 06.05.2012 - 10.05.2012; in: "ECS Meeting", (2012), 1 S.

  931. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
    "A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors";
    Vortrag: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 01.09.2014 - 04.09.2014; in: "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), S. 1 - 2.

  932. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, H. Kosina:
    "An Instability Study in Terahertz Quantum Cascade Lasers";
    Vortrag: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 03.08.2014 - 08.08.2014; in: "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), S. 10.

  933. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, H. Kosina:
    "Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers";
    Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 07.09.2014 - 12.09.2014; in: "International Quantum Cascade Lasers School & Workshop 2014", (2014), S. 182 - 183.

  934. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, H. Kosina:
    "Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects";
    Poster: Graphene Week, Chemnitz, Germany; 02.06.2013 - 07.06.2013; in: "Book of Abstracts", (2013), S. 250.

  935. Autor/innen: Andreas Morhammer, E360; Karl Rupp, E360; Florian Rudolf, E360; Josef Weinbub, E360

    A. Morhammer, K. Rupp, F. Rudolf, J. Weinbub:
    "Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs";
    Vortrag: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in: "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), S. 23.

  936. Autor/innen: Masoud Movahhedi, E360; Alexandre Nentchev, E360; Hajdin Ceric, E360; Abdolali Abdipour; Siegfried Selberherr, E360

    M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr:
    "A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method";
    Vortrag: European Microwave Week (EUMW), Manchester; 10.09.2006 - 15.09.2006; in: "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0; S. 1 - 4.

  937. Autor/innen: Mikio Mukai; Takaaki Tatsumi; N. Nakauchi; T. Kobayashi; K. Koyama; Y. Komatsu; Robert Bauer, E360; Gerhard Rieger, E360; Siegfried Selberherr, E360

    M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
    "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 151 - 154.

    Zusätzliche Informationen

  938. Autor/in: Gerd Nanz, E360

    G. Nanz:
    "Zweidimensionale Simulation allgemeiner Halbleiterbauelemente ";
    Vortrag: 2nd Workshop Device Simulation, Gesellschaft für Mathematik und Datenverarbeitung, St. Augustin; 15.11.1989 - 16.11.1989; in: "Proceedings 2nd Workshop Device Simulation", (1989), S. #.

  939. Autor/innen: Gerd Nanz, E360; D. Bräunig; Peter Dickinger, E360; Siegfried Selberherr, E360

    G. Nanz, D. Bräunig, P. Dickinger, S. Selberherr:
    "3D-Simulation of Single Event Upsets in a High Voltage Diode";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), S. 143 - 146.

  940. Autor/innen: Gerd Nanz, E360; Peter Dickinger, E360; Claus Fischer, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, C. Fischer, W. Kausel, S. Selberherr:
    "Bauelementsimulation mit BAMBI";
    Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in: "Proceedings NuTech 89", (1989), S. 6.

  941. Autor/innen: Gerd Nanz, E360; Peter Dickinger, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, W. Kausel, S. Selberherr:
    "Avalanche Breakdown in the ALDMOST";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 175 - 181.

  942. Autor/innen: Gerd Nanz, E360; Peter Dickinger, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, W. Kausel, S. Selberherr:
    "On-Resistance in the ALDMOST";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), ISBN: 2-86883-100-1; S. 629 - 632.

    Zusätzliche Informationen

  943. Autor/innen: Gerd Nanz, E360; Peter Dickinger, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, W. Kausel, S. Selberherr:
    "Punch-Through in Resurf Devices";
    Vortrag: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in: "Abstracts of the International Conference on Modelling and Simulation", 1 (1987), S. 142 - 143.

  944. Autor/innen: Gerd Nanz, E360; Peter Dickinger, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, W. Kausel, S. Selberherr:
    "Punch-Through in Resurf Devices";
    Vortrag: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in: "Proceedings of the International Conference on Modelling and Simulation", 2A (1987), S. 63 - 70.

  945. Autor/innen: Gerd Nanz, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, W. Kausel, S. Selberherr:
    "Automatic Grid Control in Device Simulation";
    Vortrag: Numerical Grid Generation in Computational Fluid Dynamics Conference, Miami Beach; 05.12.1988 - 09.12.1988; in: "Proceedings Numerical Grid Generation in Computational Fluid Mechanics Conf.", (1988), ISBN: 0-906674-68-9; S. 1039 - 1047.

  946. Autor/innen: D. Narducci; Bruno Lorenzi; R. Tonini; Stefano Frabboni; Gian Carlo Gazzadi; G. Ottaviani; Neophytos Neophytou, E360; Xanthippe Zianni

    D. Narducci, B. Lorenzi, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
    "Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon Due to the Formation of Nanovoids";
    Vortrag: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in: "Book of Abstracts", (2013), S. 52.

  947. Autor/innen: Syed Farah Naz; Ambika Shah, E360; Suhaib Ahmed; Girard Patrick; Michael Waltl, E360

    S. Naz, A. Shah, S. Ahmed, G. Patrick, M. Waltl:
    "Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata";
    Poster: IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual); 24.05.2021 - 28.05.2021; in: "Proceedings of the IEEE European Test Symposium (ETS)", (2021).

    Zusätzliche Informationen

  948. Autor/innen: Sanaz Nazemi; Ebrahim Asl Soleimani; Mahdi Pourfath, E360; Hans Kosina, E360

    S. Nazemi, E. Soleimani, M. Pourfath, H. Kosina:
    "The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 333 - 336.

  949. Autor/innen: Mihail Nedjalkov, E360; E. Atanassov; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
    "Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), S. 6.

  950. Autor/innen: Mihail Nedjalkov, E360; Paul Ellinghaus, E360; Siegfried Selberherr, E360

    M. Nedjalkov, P. Ellinghaus, S. Selberherr:
    "The Aharanov-Bohm Effect from a Phase Space Perspective";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 59 - 60.

  951. Autor/innen: Mihail Nedjalkov, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
    "Boundary Condition Models for Terminal Current Fluctuations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 152 - 155.

    Zusätzliche Informationen

  952. Autor/innen: Mihail Nedjalkov, E360; T.V. Gurov; Hans Kosina, E360; Dragica Vasileska; Vassil Palankovski, E360

    M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
    "Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 46.

  953. Autor/innen: Mihail Nedjalkov, E360; Robert Kosik, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
    "A Wigner Equation for the Nanometer and Femtosecond Transport Regime";
    Vortrag: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; S. 277 - 281.

    Zusätzliche Informationen

  954. Autor/innen: Mihail Nedjalkov, E360; Robert Kosik, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
    "Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 187 - 190.

    Zusätzliche Informationen

  955. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360

    M. Nedjalkov, H. Kosina:
    "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), S. 43.

  956. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Robert Kosik, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
    "A Space Dependent Wigner Equation Including Phonon Interaction";
    Vortrag: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), S. 4.

  957. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "A Quasi-Particle Model of the Electron - Wigner Potential Interaction";
    Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 28.07.2003 - 01.08.2003; in: "Proceedings HCIS-13", (2003), S. Th 5-1.

  958. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 35 - 36.

  959. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Monte Carlo Algorithms for Stationary Device Simulation";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), S. 58 - 59.

  960. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 155 - 158.

    Zusätzliche Informationen

  961. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Stochastic Interpretation of the Wigner Transport in Nanostructures";
    Vortrag: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 08.12.2002 - 13.12.2002; in: "Fourth International Conference on Low Dimensional Structures and Devices", (2002), S. 5.

  962. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Ivan Dimov

    M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
    "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
    Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 22.05.2000 - 25.05.2000; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6; S. 144 - 145.

    Zusätzliche Informationen

  963. Autor/innen: Mihail Nedjalkov, E360; Hans Kosina, E360; Dragica Vasileska

    M. Nedjalkov, H. Kosina, D. Vasileska:
    "Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 05.06.2007 - 09.06.2007; in: "Proceedings of the International Conference on Large-Scale Scientific Computing (LSSC)", (2007), S. B-41 - B-42.

  964. Autor/innen: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
    "Particle Model of the Scattering-Induced Wigner Function Correction";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in: "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), S. 79.

  965. Autor/innen: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360; D.K. Ferry

    M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry:
    "Phonon Decoherence in Wigner-Boltzmann Transport";
    Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 12.02.2012 - 17.02.2012; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), S. 61 - 62.

  966. Autor/innen: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360; D.K. Ferry; Dragica Vasileska; P. Dollfus; D. Querlioz

    M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz:
    "Role of the Physical Scales on the Transport Regime";
    Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 47 - 48.

  967. Autor/innen: Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    M. Nedjalkov, S. Selberherr, I. Dimov:
    "Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation";
    Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), S. B-43.

  968. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska

    M. Nedjalkov, D. Vasileska:
    "Semi-Discrete 2D Wigner-Particle Approach";
    Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 122 - 123.

  969. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska; E. Atanassov; Vassil Palankovski, E360

    M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
    "Ultrafast Wigner Transport in Quantum Wires";
    Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 285 - 286.

  970. Autor/innen: Mihail Nedjalkov, E360; Dragica Vasileska; K. Raleva

    M. Nedjalkov, D. Vasileska, K. Raleva:
    "Thermal Relaxation of Non-Equilibrium Electrons in Nanowires";
    Vortrag: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in: "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007).

  971. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Mauro Ballicchia, E360; Siegfried Selberherr, E360; Ivan Dimov; D.K. Ferry; Karl Rupp, E360

    M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry, K. Rupp:
    "A Gauge-Invariant Wigner Equation for General Electromagnetic Fields";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 67 - 68.

  972. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Mauro Ballicchia, E360; Siegfried Selberherr, E360; Ivan Dimov; D.K. Ferry; Karl Rupp, E360

    M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry, K. Rupp:
    "Posedness of Stationary Wigner Equation";
    Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 32 - 33.

  973. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Ivan Dimov; Siegfried Selberherr, E360

    M. Nedjalkov, J. Weinbub, I. Dimov, S. Selberherr:
    "Signed Particle Interpretation for Wigner-Quantum Electron Evolution";
    Hauptvortrag: National Congress of Physical Sciences, Sofia, Bulgaria (eingeladen); 29.09.2016 - 02.10.2016; in: "Abstracts Third National Congress of Physical Sciences", (2016), S. 1.

  974. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    M. Nedjalkov, J. Weinbub, S. Selberherr:
    "Modeling Carrier Transport in Nanoscale Semiconductor Devices";
    Vortrag: BIT's Annual World Congress of Nano Science & Technology, Singapore (eingeladen); 26.10.2016 - 28.10.2016; in: "Abstracts of the BIT's 6th Annual World Congress of Nano Science & Technology-2016", (2016), S. 377.

  975. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    M. Nedjalkov, J. Weinbub, S. Selberherr:
    "The Description of Carrier Transport for Quantum Systems";
    Vortrag: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand (eingeladen); 08.04.2016 - 11.04.2016; in: "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), S. 41 - 42.

  976. Autor/innen: Hamed Nematian; Mahdi Moradinasab, E360; M. Noei; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour, H. Kosina:
    "A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 217 - 218.

  977. Autor/innen: Alexandre Nentchev, E360; Johann Cervenka, E360; Gert Marnaus; H. Enichlmair; Siegfried Selberherr, E360

    A. Nentchev, J. Cervenka, G. Marnaus, H. Enichlmair, S. Selberherr:
    "Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices";
    Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in: "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9; S. 235 - 238.

  978. Autor/innen: Alexandre Nentchev, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    A. Nentchev, R. Sabelka, S. Selberherr:
    "Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions";
    Vortrag: VLSI Multilevel Interconnection Conference (VMIC), Fremont; 03.10.2005 - 06.10.2005; in: "2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference", (2005), S. 547 - 552.

  979. Autor/innen: Alexandre Nentchev, E360; Rainer Sabelka, E360; Wilfried Wessner, E360; Siegfried Selberherr, E360

    A. Nentchev, R. Sabelka, W. Wessner, S. Selberherr:
    "On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures";
    Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), S. 420 - 424.

  980. Autor/innen: Alexandre Nentchev, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Nentchev, S. Selberherr:
    "On the Magnetic Field Extraction for On-Chip Inductance Calculation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 349 - 352.

    Zusätzliche Informationen

  981. Autor/innen: Alexandre Nentchev, E360; Siegfried Selberherr, E360

    A. Nentchev, S. Selberherr:
    "Three-Dimensional On-Chip Inductance and Resistance Extraction";
    Vortrag: Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro; 03.09.2007 - 06.09.2007; in: "20th Symposium on Integrated Circuits and Systems Design", (2007), ISBN: 978-1-59593-910-4; 6 S.

    Zusätzliche Informationen

  982. Autor/innen: Neophytos Neophytou; Samuel Foster; Vasileios Vargiamaidis; D. Chakraborty; Laura Oliveira; Chathu Kumarasinghe; Michael Thesberg, E360

    N. Neophytou, S. Foster, V Vargiamaidis, D. Chakraborty, L Oliveira, C Kumarasinghe, M. Thesberg:
    "Simulation Studies of Nanostructured Thermoelectric Materials";
    Vortrag: IEEE International Conference on Nanotechnology (NANO), Cork, Ireland; 23.07.2018 - 26.07.2018; in: "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2018).

    Zusätzliche Informationen

  983. Autor/innen: Neophytos Neophytou, E360; Hossein Karamitaheri, E360; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications";
    Vortrag: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 03.07.2012 - 06.07.2012; in: "Abstract Book", (2012), S. 46.

  984. Autor/innen: Neophytos Neophytou, E360; Hossein Karamitaheri, E360; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling";
    Vortrag: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S.

  985. Autor/innen: Neophytos Neophytou, E360; Hossein Karamitaheri, E360; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers";
    Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 1.

  986. Autor/innen: Neophytos Neophytou, E360; Hossein Karamitaheri, E360; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons";
    Vortrag: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in: "Book of Abstracts", (2013), 1 S.

  987. Autor/innen: Neophytos Neophytou, E360; Gerhard Klimeck; Hans Kosina, E360

    N. Neophytou, G. Klimeck, H. Kosina:
    "A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires";
    Poster: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 93 - 96.

    Zusätzliche Informationen

  988. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires";
    Vortrag: Annual March Meeting of the American Physical Society, Portland; 15.03.2010 - 19.03.2010; in: "Proceedings of the Annual March Meeting of the American Physical Society", (2010), S. 401.

  989. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation";
    Vortrag: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 14.06.2011 - 17.06.2011; in: "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011), 1 S.

  990. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects";
    Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (eingeladen); 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 488.

  991. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011), 2 S.

  992. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model";
    Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 21.02.2010 - 24.02.2010; in: "Nanostructured Thermoelectric Materials", (2010), 1 S.

  993. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach";
    Vortrag: International Conference on Thermoelectrics, Nashville, USA; 06.07.2014 - 10.07.2014; in: "Book of Abstracts", (2014), 1 S.

  994. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), S. 131 - 132.

  995. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 31 - 34.

    Zusätzliche Informationen

  996. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures";
    Vortrag: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 S.

  997. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Power Factor of Low Dimensional Silicon Nanowires";
    Vortrag: European Conference on Thermoelectrics, Thessaloniki, Greece; 28.09.2011 - 30.09.2011; in: "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 S.

  998. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations";
    Vortrag: 30th International Conference on Thermoelectrics, Michigan, USA; 17.07.2011 - 21.07.2011; in: "Book of Abstracts", (2011), 1 S.

  999. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires";
    Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA (eingeladen); 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 67 - 68.

  1000. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric properties of gated Si nanowires";
    Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 197 - 198.

  1001. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Properties of Gated Silicon Nanowires";
    Vortrag: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in: "Bulletin of the American Physical Society (APS March Meeting)", (2014), 1 S.

  1002. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures";
    Vortrag: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 S.

  1003. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model";
    Vortrag: 29th International Conference on Thermoelectrics, Shanghai; 30.05.2010 - 03.06.2010; in: "Proceedings of the 29th International Conference on Thermoelectrics", (2010), S. 71.

  1004. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations";
    Vortrag: APS March Meeting, Dallas, Texas; 21.03.2011 - 25.03.2011; in: "APS March Meeting 2011", (2011), 1 S.

  1005. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360; T. Rakshit

    N. Neophytou, H. Kosina, T. Rakshit:
    "Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance";
    Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 161 - 164.

    Zusätzliche Informationen

  1006. Autor/innen: Neophytos Neophytou, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Gerhard Klimeck

    N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck:
    "Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 71 - 74.

    Zusätzliche Informationen

  1007. Autor/innen: Neophytos Neophytou, E360; Zlatan Stanojevic; Hans Kosina, E360

    N. Neophytou, Z. Stanojevic, H. Kosina:
    "Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 81 - 84.

    Zusätzliche Informationen

  1008. Autor/innen: Neophytos Neophytou, E360; Zlatan Stanojevic; Hans Kosina, E360

    N. Neophytou, Z. Stanojevic, H. Kosina:
    "Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations";
    Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 23.09.2013 - 26.09.2013; in: "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), S. 142.

  1009. Autor/innen: Neophytos Neophytou; Michael Thesberg, E360; Hans Kosina, E360

    N. Neophytou, M. Thesberg, H. Kosina:
    "Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations";
    Vortrag: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in: "Book of Abstracts 14th European Conference on Thermoelectrics", (2016).

  1010. Autor/innen: Neophytos Neophytou; Michael Thesberg, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    N. Neophytou, M. Thesberg, M. Pourfath, H. Kosina:
    "Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations";
    Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015).

  1011. Autor/innen: Neophytos Neophytou, E360; Martin Wagner, E360; Hans Kosina, E360

    N. Neophytou, M. Wagner, H. Kosina:
    "Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires";
    Vortrag: 8th European Conference on Thermoelectrics (ECT 2010), Como; 22.09.2010 - 24.09.2010; in: "Note-Book of Abstracts", (2010), S. 30.

  1012. Autor/innen: Neophytos Neophytou, E360; M Wagner; Hans Kosina, E360; Siegfried Selberherr, E360

    N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
    "Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model";
    Vortrag: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 26.07.2009 - 30.07.2009; in: "Book of Abstracts", (2009), S. 91.

  1013. Autor/innen: S. Okhonin; M. Nagoga; C. W. Lee; J. P. Colinge; A. Afzalian; R. Yan; N. D. Akhavan; W. Xiong; Viktor Sverdlov, E360; Siegfried Selberherr, E360; C. Mazure

    S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure:
    "Ultra-Scaled Z-RAM Cell";
    Vortrag: 2008 IEEE International SOI Conference, New Paltz; 06.10.2008 - 09.10.2008; in: "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8; S. 157 - 158.

  1014. Autor/innen: Roberto Orio, E360; Sara Carniello; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, S. Carniello, H. Ceric, S. Selberherr:
    "Analysis of Electromigration in Dual-Damascene Interconnect Structures";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; S. 337 - 348.

  1015. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Sara Carniello; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Carniello, S. Selberherr:
    "Analysis of Electromigration in Redundant Vias";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 237 - 240.

    Zusätzliche Informationen

  1016. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
    "Electromigration Failure Development in Modern Dual-Damascene Interconnects";
    Vortrag: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 15 (2009), ISBN: 978-3-90188-237-1; 5 S.

  1017. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
    "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 182 - 185.

    Zusätzliche Informationen

  1018. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
    "The Effect of Microstructure on Electromigration-Induced Failure Development";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 345 - 352.

  1019. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
    "The Effect of Microstructure on the Electromigration Lifetime Distribution";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), S. 731 - 734.

  1020. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "A Compact Model for Early Electromigration Lifetime Estimation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 23 - 26.

    Zusätzliche Informationen

  1021. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via";
    Vortrag: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; S. 273 - 280.

    Zusätzliche Informationen

  1022. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
    Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 62 - 63.

  1023. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
    Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 01.10.2012 - 05.10.2012; in: "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), S. 1981 - 1986.

  1024. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 232 - 235.

    Zusätzliche Informationen

  1025. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Modeling Electromigration Lifetimes of Copper Interconnects";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; S. 163 - 169.

    Zusätzliche Informationen

  1026. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 268 - 271.

  1027. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Strain-Induced Anisotropy of Electromigration in Copper Interconnect";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S.

  1028. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration";
    Vortrag: Trends in Magnetism (TMAG), Cefalù, Italy; 06.09.2021 - 10.09.2021; in: "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021).

  1029. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 123 - 124.

  1030. Autor/innen: Roberto Orio, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Simone Fiorentini, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov:
    "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy";
    Vortrag: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 04.06.2022 - 06.06.2022; in: "2022 IEEE Latin American Electron Devices Conference (LAEDC)", 978-1-6654-9768-8, (2022), ISBN: 978-1-6654-9768-8; S. 1 - 4.

    Zusätzliche Informationen

  1031. Autor/innen: Roberto Orio; Simon Gousseau; Stéphane Moreau; Hajdin Ceric, E360; Siegfried Selberherr, E360; Alexis Farcy; François Bay; Karim Inal; Pierre Montmitonnet

    R. Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
    "On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
    Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6; S. 111 - 114.

    Zusätzliche Informationen

  1032. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques";
    Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 S.

  1033. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov:
    "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents";
    Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 13.09.2020 - 16.09.2020; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4; S. 58 - 61.

  1034. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM";
    Vortrag: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 19.05.2019 - 22.05.2019; in: "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), S. 34.

  1035. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 01.04.2019 - 03.04.2019; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), S. 152 - 153.

  1036. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Wolfgang Gös; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov:
    "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 69 - 71.

  1037. Autor/innen: Roberto Orio, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558; S. 146 - 149.

    Zusätzliche Informationen

  1038. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360

    R. Orio, S. Selberherr:
    "About Voids in Copper Interconnects";
    Vortrag: International Conference on Materials for Advanced Technologies (ICMAT), Singapore (eingeladen); 30.06.2013 - 05.07.2013; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), S. 8.

  1039. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360

    R. Orio, S. Selberherr:
    "Compact Modeling of Interconnect Reliability";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (eingeladen); 17.11.2011 - 18.11.2011; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 S.

    Zusätzliche Informationen

  1040. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360

    R. Orio, S. Selberherr:
    "Formation and Movement of Voids in Copper Interconnect Structures";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (eingeladen); 29.10.2012 - 01.11.2012; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5; S. 378 - 381.

    Zusätzliche Informationen

  1041. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360

    R. Orio, S. Selberherr:
    "Physically Based Models of Electromigration";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 03.06.2013 - 05.06.2013; in: "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", 290 (2013), S. 1 - 2.

  1042. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov:
    "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 54 - 55.

  1043. Autor/innen: Roberto Orio, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, S. Selberherr, V. Sverdlov:
    "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
    Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 11.08.2019 - 15.08.2019; in: "Proceedings of SPIE Spintronics", (2019), S. 11090-123.

  1044. Autor/innen: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 153 - 156.

  1045. Autor/innen: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
    Vortrag: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 19.09.2012 - 21.09.2012; in: "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0; S. 156 - 162.

  1046. Autor/innen: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 229 - 230.

  1047. Autor/innen: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
    Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in: "Book of Abstracts", (2012), S. P-27.

  1048. Autor/innen: Dimitry Osintsev, E360; Joydeep Ghosh, E360; Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spin Lifetime in MOSFETs: A High Performance Computing Approach";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 60 - 61.

  1049. Autor/innen: Dimitry Osintsev, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
    "An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
    Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 S.

  1050. Autor/innen: Dimitry Osintsev, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 64.

  1051. Autor/innen: Dimitry Osintsev, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 770 - 773.

    Zusätzliche Informationen

  1052. Autor/innen: Dimitry Osintsev, E360; Zlatan Stanojevic; Oskar Baumgartner, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
    "Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
    Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 29.07.2012 - 03.08.2012; in: "31st International Conference on the Physics of Semiconductors (ICPS 2012)", 1566 (2012), ISBN: 978-0-7354-1194-4; 1 S.

    Zusätzliche Informationen

  1053. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
    Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), S. 229.

  1054. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
    Vortrag: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 S.

  1055. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; S. 155 - 162.

    Zusätzliche Informationen

  1056. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 59 - 62.

    Zusätzliche Informationen

  1057. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S.

  1058. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
    Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. B3.

  1059. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Neophytos Neophytou, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
    "Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
    Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 23.02.2014 - 28.02.2014; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), S. 88 - 89.

  1060. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Neophytos Neophytou, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
    "Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 59 - 60.

  1061. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films";
    Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; S. 69 - 70.

  1062. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films";
    Vortrag: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 S.

  1063. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 236 - 239.

    Zusätzliche Informationen

  1064. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2.

  1065. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 76 - 77.

  1066. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 19.03.2013 - 21.03.2013; in: "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7; S. 221 - 224.

    Zusätzliche Informationen

  1067. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain";
    Vortrag: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in: "Bulletin of the American Physical Society (APS March Meeting)", 59/1 (2014), 1 S.

  1068. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Modeling Spintronic Effects in Silicon";
    Vortrag: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany (eingeladen); 24.09.2012 - 28.09.2012; in: "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 S.

  1069. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 16.09.2013 - 20.09.2013; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9; S. 334 - 337.

    Zusätzliche Informationen

  1070. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 21.01.2013 - 23.01.2013; in: "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", 46 (2013), 1 S.

  1071. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
    Vortrag: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 64 - 65.

  1072. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
    Vortrag: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 12.05.2013 - 16.05.2013; in: "223th ECS Meeting", 894 (2013), ISBN: 978-1-56677-866-4; S. 1.

  1073. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Spin Lifetime Enhancement in Strained Thin Silicon Films";
    Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 S.

  1074. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 02.12.2012 - 07.12.2012; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0; S. 33.

  1075. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), S. 77 - 78.

  1076. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films";
    Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 28.07.2014 - 31.07.2014; in: "Book of Abstracts", (2014), S. 1.

  1077. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
    Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), S. 59 - 60.

  1078. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
    Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 14.03.2011 - 16.03.2011; in: "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", IEEE, (2011), ISBN: 978-1-4577-0090-3; S. 210 - 213.

    Zusätzliche Informationen

  1079. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic, E360; Alexander Makarov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
    "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
    Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 01.05.2011 - 06.05.2011; in: "Meeting Abstracts", ECS, MA2011-01(23): 1453 (2011), S. 1.

  1080. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
    "Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
    Vortrag: APS March Meeting, Dallas, Texas, USA; 21.03.2011 - 25.03.2011; in: "Bulletin American Physical Society (APS March Meeting 2011)", (2011).

  1081. Autor/innen: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 193 - 196.

    Zusätzliche Informationen

  1082. Autor/innen: B. J. O´Sullivan; Romain Ritzenthaler; Gerhard Rzepa, E360; Zhicheng Wu; Eugenio Dentoni Litta; Olivier Richard; Thierry Conard; Vladimir Machkaoutsan; Pierre Fazan; Cheolgyu Kim; J. Franco; Ben Kaczer; Tibor Grasser, E360; Alessio Spessot; D Linten; N. Horiguchi

    B. O´Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. D. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim, J. Franco, B. Kaczer, T. Grasser, A. Spessot, D. Linten, N. Horiguchi:
    "Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 8.

    Zusätzliche Informationen

  1083. Autor/in: Vassil Palankovski, E360

    V. Palankovski:
    "Novel High-Performance GaN Transistors";
    Vortrag: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (eingeladen); 07.12.2008 - 12.12.2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), S. MO-03.

  1084. Autor/innen: Vassil Palankovski, E360; N. Belova; Tibor Grasser, E360; Helmut Puchner, E360; Sheldon Aronowitz; Siegfried Selberherr, E360

    V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
    "A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 428 - 431.

    Zusätzliche Informationen

  1085. Autor/innen: Vassil Palankovski, E360; N. Belova; Tibor Grasser, E360; Helmut Puchner, E360; Sheldon Aronowitz; Siegfried Selberherr, E360

    V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
    "Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
    Vortrag: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; S. 201 - 206.

    Zusätzliche Informationen

  1086. Autor/innen: Vassil Palankovski, E360; Siddhartha Dhar, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
    "Improved Carrier Transport in Strained Si/Ge Devices";
    Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi (eingeladen); 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S.

    Zusätzliche Informationen

  1087. Autor/innen: Vassil Palankovski, E360; Benito Gonzalez; Hans Kosina, E360; A. Hernandez; Siegfried Selberherr, E360

    V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr:
    "A New Analytical Energy Relaxation Time Model for Device Simulation";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 395 - 398.

  1088. Autor/innen: Vassil Palankovski, E360; Tibor Grasser, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
    "Simulation of Polysilicon Emitter Bipolar Transistors";
    Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 608 - 611.

    Zusätzliche Informationen

  1089. Autor/innen: Vassil Palankovski, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    V. Palankovski, T. Grasser, S. Selberherr:
    "SiGe HBT in Mixed-Mode Device and Circuit Simulation";
    Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 24.05.1998 - 27.05.1998; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), S. 145 - 156.

  1090. Autor/innen: Vassil Palankovski, E360; Marin Hristov; Philipp Philippov

    V. Palankovski, M. Hristov, P. Philippov:
    "Two-Dimensional Physical AC-Simulation of GaAs HBTs";
    Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; S. 164 - 168.

  1091. Autor/innen: Vassil Palankovski, E360; Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 105 - 108.

    Zusätzliche Informationen

  1092. Autor/innen: Vassil Palankovski, E360; Goran Kaiblinger-Grujin, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: L. Brogiato; D.V. Camin; G. Pessina

    V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
    "Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance";
    Vortrag: European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 24.06.1998 - 26.06.1998; in: "Proceedings European Workshop on Low Temperature Electronics 3", L. Brogiato, D.V. Camin, G. Pessina (Hrg.); Journal de Physique IV, 8 (1998), S. 91 - 94.

    Zusätzliche Informationen

  1093. Autor/innen: Vassil Palankovski, E360; Goran Kaiblinger-Grujin, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
    "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
    Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 21.06.1998 - 24.06.1998; in: "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", PSA, (1998), S. 15.

  1094. Autor/innen: Vassil Palankovski, E360; Robert Klima, E360; R. Schultheis; Siegfried Selberherr, E360

    V. Palankovski, R. Klima, R. Schultheis, S. Selberherr:
    "Three-Dimensional Analysis of Leakage Currents in III-V HBTs";
    Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 20.10.2002 - 23.10.2002; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9; S. 229 - 232.

    Zusätzliche Informationen

  1095. Autor/innen: Vassil Palankovski, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    V. Palankovski, M. Knaipp, S. Selberherr:
    "Influence of the Material Composition and Doping Profiles on HBTs Device Performance";
    Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 13.05.1998 - 16.05.1998; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4; S. 7 - 10.

  1096. Autor/innen: Vassil Palankovski, E360; J. Kuzmik

    V. Palankovski, J. Kuzmik:
    "A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications";
    Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 2551, 1 S.

  1097. Autor/innen: Vassil Palankovski, E360; J. Kuzmik

    V. Palankovski, J. Kuzmik:
    "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation";
    Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 2543, 1 S.

  1098. Autor/innen: Vassil Palankovski, E360; Artur Marchlewski, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    V. Palankovski, A. Marchlewski, E. Ungersböck, S. Selberherr:
    "Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 14-1 - 14-9.

  1099. Autor/innen: Vassil Palankovski, E360; Rüdiger Quay, E360; Siegfried Selberherr, E360

    V. Palankovski, R. Quay, S. Selberherr:
    "Industrial Application of Heterostructure Device Simulation";
    Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle (eingeladen); 05.11.2000 - 08.11.2000; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2; S. 117 - 120.

    Zusätzliche Informationen

  1100. Autor/innen: Vassil Palankovski, E360; Rüdiger Quay, E360; Siegfried Selberherr, E360; R. Schultheis

    V. Palankovski, R. Quay, S. Selberherr, R. Schultheis:
    "S-Parameter Simulation of HBTs on Gallium-Arsenide";
    Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x; S. 15 - 19.

    Zusätzliche Informationen

  1101. Autor/innen: Vassil Palankovski, E360; G. Röhrer; Tibor Grasser, E360; Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
    "Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
    Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 97 - 98.

  1102. Autor/innen: Vassil Palankovski, E360; G. Röhrer; E. Wachmann; J. Kraft; B. Löffler; Johann Cervenka, E360; Rüdiger Quay, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
    "Optimization of High-Speed SiGe HBTs";
    Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 15.11.2001 - 16.11.2001; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; S. 187 - 191.

    Zusätzliche Informationen

  1103. Autor/innen: Vassil Palankovski, E360; R. Schultheis; A. Bonacina; Siegfried Selberherr, E360

    V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
    "Effectiveness of Silicon Nitride Passivation in III-V Based HBTs";
    Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), S. 188.

  1104. Autor/innen: Vassil Palankovski, E360; R. Schultheis; A. Bonacina; Siegfried Selberherr, E360

    V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
    "Investigations on the Impact of the InGaP Ledge on HBT-Performance";
    Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 29.05.2000 - 02.06.2000; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9; S. 5 - 6.

  1105. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Analysis of High Speed Heterostructure Devices";
    Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 16.05.2004 - 19.05.2004; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; S. 115 - 122.

    Zusätzliche Informationen

  1106. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Challenges in Modeling of High-Speed Electron Devices";
    Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras (eingeladen); 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 45 - 50.

  1107. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Critical Modeling Issues of SiGe Semiconductor Devices";
    Vortrag: Symposium on Diagnostics and Yield, Warsaw (eingeladen); 22.06.2003 - 25.06.2003; in: "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), S. 1 - 11.

  1108. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "III-V Semiconductor Materials in MINIMOS-NT";
    Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in: "Abstracts MRS Spring Meeting", (2000), S. 249.

  1109. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Modeling High Speed Semiconductor Devices of Modern Communication Systems";
    Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 27.07.2003 - 30.07.2003; in: "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9; S. 97 - 102.

  1110. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Numerical Simulation of Selected Semiconductor Devices";
    Vortrag: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 122 - 125.

    Zusätzliche Informationen

  1111. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Optimization of SiGe HBTs for Industrial Applications";
    Vortrag: International SiGe Technology and Device Meeting (ISTDM), Nagoya (eingeladen); 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 267 - 268.

  1112. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Rigorous Modeling of High-Speed Semiconductor Devices";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 16.12.2003 - 18.12.2003; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4; S. 127 - 132.

    Zusätzliche Informationen

  1113. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "State-of-the-art Micro Materials Models in MINIMOS-NT";
    Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; S. 290 - 291.

  1114. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "State-of-the-art Micro Materials Models in MINIMOS-NT";
    Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, Dresden (2000), ISBN: 3-932434-15-3; S. 714 - 717.

  1115. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Thermal Models for Semiconductor Device Simulation";
    Vortrag: Conference on High Temperature Electronics (HITEN), Berlin; 04.07.1999 - 07.07.1999; in: "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7; S. 25 - 28.

    Zusätzliche Informationen

  1116. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360; Rüdiger Quay, E360; R. Schultheis

    V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
    "Analysis of HBT Behavior After Strong Electrothermal Stress";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 245 - 248.

    Zusätzliche Informationen

  1117. Autor/innen: Vassil Palankovski, E360; Siegfried Selberherr, E360; R. Schultheis

    V. Palankovski, S. Selberherr, R. Schultheis:
    "Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 227 - 230.

    Zusätzliche Informationen

  1118. Autor/innen: Vassil Palankovski, E360; Rudolf Strasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Palankovski, R. Strasser, H. Kosina, S. Selberherr:
    "A Systematic Approach for Model Extraction for Device Simulation Application";
    Vortrag: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; S. 463 - 466.

  1119. Autor/innen: Vassil Palankovski, E360; Stanislav Vitanov, E360; Rüdiger Quay

    V. Palankovski, S. Vitanov, R. Quay:
    "Field-Plate Optimization of AlGaN/GaN HEMTs";
    Vortrag: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 12.11.2006 - 15.11.2006; in: "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7; S. 107 - 110.

    Zusätzliche Informationen

  1120. Autor/innen: Vassil Palankovski, E360; Martin Wagner, E360; Wolfgang Heiss

    V. Palankovski, M. Wagner, W. Heiss:
    "Monte Carlo Simulation of Electron Transport in PbTe";
    Vortrag: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in: "The 13thInternational Conference on Narrow Gap Semiconductors", (2007), S. 50.

  1121. Autor/innen: Vassil Palankovski, E360; Stephan Wagner, E360; Tibor Grasser, E360; R. Schultheis; Siegfried Selberherr, E360

    V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
    "Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
    Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 07.10.2002 - 10.10.2002; in: "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3; S. 303 - 306.

  1122. Autor/innen: Vassil Palankovski, E360; Stephan Wagner, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Wagner, S. Selberherr:
    "Numerical Analysis of Compound Semiconductor RF Devices";
    Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego (eingeladen); 09.11.2003 - 12.11.2003; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4; S. 107 - 110.

    Zusätzliche Informationen

  1123. Autor/innen: Santo Papaleo, E360; Hajdin Ceric, E360

    S. Papaleo, H. Ceric:
    "A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects";
    Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8; S. PA-2-1 - PA-2-4.

    Zusätzliche Informationen

  1124. Autor/innen: Santo Papaleo, E360; Marco Rovitto, E360; Hajdin Ceric, E360

    S. Papaleo, M. Rovitto, H. Ceric:
    "Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall";
    Vortrag: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 1617 - 1622.

    Zusätzliche Informationen

  1125. Autor/innen: Santo Papaleo, E360; Wolfhard Zisser, E360; Hajdin Ceric, E360

    S. Papaleo, W. H. Zisser, H. Ceric:
    "Effects of the Initial Stress at the Bottom of Open TSVs";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015).

  1126. Autor/innen: Santo Papaleo, E360; Wolfhard Zisser, E360; Hajdin Ceric, E360

    S. Papaleo, W. H. Zisser, H. Ceric:
    "Factors that Influence Delamination at the Bottom of Open TSVs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 421 - 424.

    Zusätzliche Informationen

  1127. Autor/innen: Santo Papaleo, E360; Wolfhard Zisser, E360; Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
    "Stress Analysis in Open TSVs after Nanoindentation";
    Vortrag: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in: "Abstracts", (2014), S. 39 - 40.

  1128. Autor/innen: Santo Papaleo, E360; Wolfhard Zisser, E360; Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
    "Stress Evolution During the Nanoindentation in Open TSVs";
    Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 52.

  1129. Autor/innen: Jong Mun Park, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
    "Numerical Study of Partial-SOI LDMOSFET Power Devices";
    Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in: "2001 International Semiconductor Device Research Symposium", (2001), S. 114 - 117.

  1130. Autor/innen: Jong Mun Park, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    J.M. Park, T. Grasser, S. Selberherr:
    "High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length";
    Vortrag: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; S. 273 - 282.

  1131. Autor/innen: Jong Mun Park, E360; Robert Klima, E360; Siegfried Selberherr, E360

    J.M. Park, R. Klima, S. Selberherr:
    "High-Voltage Lateral Trench Gate SOI LDMOSFETs";
    Poster: International Seminar on Power Semiconductors (ISPS), Prague; 04.09.2002 - 06.09.2002; in: "Proceedings ISPS 2002", (2002), ISBN: 80-01-02595-0; S. 241 - 244.

  1132. Autor/innen: Jong Mun Park, E360; Robert Klima, E360; Siegfried Selberherr, E360

    J.M. Park, R. Klima, S. Selberherr:
    "Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 283 - 286.

  1133. Autor/innen: Christoph Pichler, E360; N. Khalil; Gerhard Schrom, E360; Siegfried Selberherr, E360

    C. Pichler, N. Khalil, G. Schrom, S. Selberherr:
    "TCAD Optimization Based on Task-Level Framework Services";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 70 - 73.

    Zusätzliche Informationen

  1134. Autor/innen: Christoph Pichler, E360; Richard Plasun, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
    "Simulation Environment for Semiconductor Technology Analysis";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 147 - 148.

    Zusätzliche Informationen

  1135. Autor/innen: Christoph Pichler, E360; Siegfried Selberherr, E360

    C. Pichler, S. Selberherr:
    "Process Flow Representation within the VISTA Framework";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 06.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 25 - 28.

    Zusätzliche Informationen

  1136. Autor/innen: Christoph Pichler, E360; Siegfried Selberherr, E360

    C. Pichler, S. Selberherr:
    "Rapid Semiconductor Process Design with the VISTA Framework: Integration of Simulation Tools";
    Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 10.05.1993 - 12.05.1993; in: "Proceedings IASTED International Conference on Modelling and Simulation", (1993), S. 147 - 150.

  1137. Autor/innen: Peter Pichler; Werner Jüngling, E360; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
    "Process and Device Simulation with One and the Same Program";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 477 - 482.

  1138. Autor/innen: Peter Pichler; Werner Jüngling, E360; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
    "Zweidimensionale Prozeßsimulation";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 15.10.1985 - 17.10.1985; in: "Bericht der Informationstagung Mikroelektronik", (1985), ISBN: 3-211-81893-6; S. 41 - 46.

    Zusätzliche Informationen

  1139. Autor/innen: Peter Pichler; Werner Jüngling, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
    "Two-Dimensional Coupled Diffusion Modeling";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1984), ISBN: 0-444-86942-5; S. 187 - 191.

  1140. Autor/innen: Peter Pichler; Werner Jüngling, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
    "Two-Dimensional Coupled Diffusion Modeling";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in: "Abstracts of the European Solid-State Device Research Conference (ESSDERC)", (1984), S. 182 - 185.

  1141. Autor/innen: Hubert Pimingstorfer; Stefan Halama, E360; Siegfried Selberherr, E360

    H. Pimingstorfer, S. Halama, S. Selberherr:
    "A TCAD Environment for Process and Device Engineering";
    Vortrag: International Conference on VLSI and CAD (ICVC), Seoul; 22.10.1991 - 25.10.1991; in: "Proceedings International Conference on VLSI and CAD 91", (1991), S. 280 - 283.

  1142. Autor/innen: Hubert Pimingstorfer; Stefan Halama, E360; Siegfried Selberherr, E360; Karl Wimmer, E360; Peter Verhas, E360

    H. Pimingstorfer, S. Halama, S. Selberherr, K. Wimmer, P. Verhas:
    "A Technology CAD Shell";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 409 - 416.

  1143. Autor/innen: Hubert Pimingstorfer; Siegfried Selberherr, E360

    H. Pimingstorfer, S. Selberherr:
    "Advanced MOS Device Engineering Utilizing a Technology CAD Framework";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 391 - 393.

  1144. Autor/innen: Richard Plasun, E360; Christoph Pichler, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    R. Plasun, C. Pichler, T. Simlinger, S. Selberherr:
    "Optimization Tasks in Technology CAD";
    Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 445 - 449.

  1145. Autor/innen: Richard Plasun, E360; Christoph Pichler, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360
    Andere beteiligte Personen: V. Kumar; S K Agarwal

    R. Plasun, C. Pichler, T. Simlinger, S. Selberherr:
    "Technology CAD for Smart Power Devices";
    Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi; 16.12.1997 - 20.12.1997; in: "Physics of Semiconductor Devices", V. Kumar, S. Agarwal (Hrg.); (1997), S. 481 - 488.

  1146. Autor/innen: Richard Plasun, E360; Michael Stockinger, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    R. Plasun, M. Stockinger, R. Strasser, S. Selberherr:
    "Simulation Based Optimization Environment and it's Application to Semiconductor Devices";
    Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 313 - 316.

  1147. Autor/innen: G. Pobegen; T. Aichinger; Tibor Grasser, E360; M. Nelhiebel

    G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
    "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
    Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), S. 1530 - 1534.

  1148. Autor/innen: G. Pobegen; T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
    "Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1073 - 1077.

  1149. Autor/innen: G. Pobegen; T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
    "Understanding Temperature Acceleration for NBTI";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S.

    Zusätzliche Informationen

  1150. Autor/innen: Gregor Pobegen; Michael Nelhiebel; Tibor Grasser, E360

    G. Pobegen, M. Nelhiebel, T. Grasser:
    "Detrimental impact of hydrogen passivation on NBTI and HC degradation";
    Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6.

  1151. Autor/innen: Gregor Pobegen; Michael Nelhiebel; Tibor Grasser, E360

    G. Pobegen, M. Nelhiebel, T. Grasser:
    "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), S. 54 - 59.

  1152. Autor/innen: Hans Pötzl, E366; Siegfried Selberherr, E360; A. Schütz, E366

    H. Pötzl, S. Selberherr, A. Schütz:
    "MOS-Großintegration";
    Vortrag: Winterschule Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik, Mariapfarr; 25.02.1980 - 01.03.1980; in: "Kursunterlagen Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik", (1980), S. 5 - 6.

  1153. Autor/innen: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model";
    Vortrag: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 19.05.2008 - 22.05.2008; in: "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), S. 634 - 637.

  1154. Autor/innen: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots";
    Vortrag: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 18.08.2008 - 22.08.2008; in: "Proceedings International Symposium on Electromagnetic Compatibility", 1113 (2008), ISBN: 978-1-4244-1699-8.

    Zusätzliche Informationen

  1155. Autor/innen: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities";
    Vortrag: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 16.05.2011 - 19.05.2011; in: "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 S.

  1156. Autor/innen: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside";
    Vortrag: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 08.09.2008 - 12.09.2008; in: "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7; S. 109 - 114.

  1157. Autor/innen: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables";
    Vortrag: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 12.04.2010 - 16.04.2010; in: "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9; S. 1102 - 1105.

  1158. Autor/innen: Mahdi Pourfath, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    M. Pourfath, O. Baumgartner, H. Kosina:
    "On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors";
    Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 01.09.2008 - 04.09.2008; in: "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1; S. 99 - 100.

    Zusätzliche Informationen

  1159. Autor/innen: Mahdi Pourfath, E360; Oskar Baumgartner, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr:
    "Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors";
    Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; S. 13 - 14.

  1160. Autor/innen: Mahdi Pourfath, E360; Byoung-Ho Cheong; Wanjun Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
    "High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration";
    Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707; S. 95 - 98.

  1161. Autor/innen: Mahdi Pourfath, E360; Andreas Gehring, E360; Byoung-Ho Cheong; W.J. Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
    "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration";
    Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 128 - 131.

  1162. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Carbon Based Electronics: A Computational Study";
    Vortrag: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (eingeladen); 20.04.2009 - 24.04.2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), S. 18.

  1163. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 81 - 84.

    Zusätzliche Informationen

  1164. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors";
    Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 04.09.2006 - 08.09.2006; in: "Proceedings Trends in Nanotechnology", (2006), 2 S.

  1165. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina:
    "The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 309 - 312.

    Zusätzliche Informationen

  1166. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Byoung-Ho Cheong; W.J. Park

    M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park:
    "Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 91 - 94.

    Zusätzliche Informationen

  1167. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Byoung-Ho Cheong; W.J. Park; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
    "Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Cdrom Isbn: 0-7803-9204-3 (2005), ISBN: 0-7803-9203-5; S. 541 - 544.

  1168. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Byoung-Ho Cheong; W.J. Park; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
    "The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors";
    Vortrag: IEEE Conference on Nanotechnology (NANO), Nagoya; 11.07.2005 - 15.07.2005; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", Cdrom Isbn: 0-7803-9200-0 (2005), 4 S.

    Zusätzliche Informationen

  1169. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Byoung-Ho Cheong; W.J. Park; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
    "The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 208 - 211.

    Zusätzliche Informationen

  1170. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x; S. 819 - 822.

    Zusätzliche Informationen

  1171. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
    Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 95 - 96.

  1172. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Current Transport in Carbon Nanotube Transistors";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (eingeladen); 20.10.2008 - 23.10.2008; in: "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2; S. 361 - 364.

  1173. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Dissipative Transport in CNTFETs";
    Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 345 - 346.

  1174. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors";
    Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 S.

  1175. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Optimal Design for Carbon Nanotube Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 19.09.2006 - 21.09.2006; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4; S. 210 - 213.

  1176. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Optimizing the Performance of Carbon Nanotube Transistors";
    Poster: IEEE Conference on Nanotechnology (NANO), Cincinnati; 17.06.2006 - 20.06.2006; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2006), ISBN: 1-4244-0078-3; S. 520 - 523.

    Zusätzliche Informationen

  1177. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 15.09.2008 - 19.09.2008; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2008), S. 214 - 217.

  1178. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Rigorous Modeling of Carbon Nanotube Field Effect Transistors";
    Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 27.11.2005 - 02.12.2005; in: "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), S. 155 - 156.

  1179. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
    Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Waikoloa, Hawaii; 02.12.2007 - 07.12.2007; in: "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), S. 37 - 38.

  1180. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1123-8; S. 239 - 242.

  1181. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Theoretical Study of Graphene Nanoribbon Photo-Detectors";
    Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 30.11.2009 - 04.12.2009; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), S. 178 - 179.

  1182. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Tunneling-CNTFETs";
    Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 291 - 292.

  1183. Autor/innen: Mahdi Pourfath, E360; W.J. Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, W.J. Park, H. Kosina, S. Selberherr:
    "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 50 - 51.

  1184. Autor/innen: Mahdi Pourfath, E360; Siegfried Selberherr, E360

    M. Pourfath, S. Selberherr:
    "Analysis of Carbon Nanotube Photo-Detectors";
    Vortrag: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (eingeladen); 07.12.2008 - 12.12.2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), S. TU-06.

  1185. Autor/innen: Mahdi Pourfath, E360; Siegfried Selberherr, E360

    M. Pourfath, S. Selberherr:
    "Carbon-Based Electronics: A Computational Study";
    Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi (eingeladen); 15.12.2009 - 19.12.2009; in: "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 S.

  1186. Autor/innen: Mahdi Pourfath, E360; Siegfried Selberherr, E360

    M. Pourfath, S. Selberherr:
    "Current Transport in Carbon Nanotube Transistors";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun (eingeladen); 28.04.2008 - 30.04.2008; in: "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9; 6 S.

  1187. Autor/innen: Mahdi Pourfath, E360; Siegfried Selberherr, E360

    M. Pourfath, S. Selberherr:
    "Modeling Current Transport in Carbon Nanotube Transistors";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 08.12.2008 - 10.12.2008; in: "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2; 6 S.

  1188. Autor/innen: Mahdi Pourfath, E360; Siegfried Selberherr, E360

    M. Pourfath, S. Selberherr:
    "Modeling Optical Sensors Based on Carbon Nanotubes";
    Vortrag: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi (eingeladen); 16.12.2009 - 19.12.2009; in: "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), S. 1381 - 1384.

  1189. Autor/innen: Mahdi Pourfath, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    M. Pourfath, V. Sverdlov, H. Kosina:
    "On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors";
    Vortrag: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 29.06.2008 - 03.07.2008; in: "1st Fone Conference Nanoelectronics 2008", (2008), S. 41.

  1190. Autor/innen: Mahdi Pourfath, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    M. Pourfath, V. Sverdlov, S. Selberherr:
    "Modeling Demands for Nanoscale Devices";
    Vortrag: Device Research Conference, South Bend (eingeladen); 21.06.2010 - 23.06.2010; in: "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5; S. 211 - 214.

  1191. Autor/innen: Mahdi Pourfath, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    M. Pourfath, V. Sverdlov, S. Selberherr:
    "Transport Modeling for Nanoscale Semiconductor Devices";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (eingeladen); 01.11.2010 - 04.11.2010; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", 4 (2010), ISBN: 978-1-4244-5799-1; S. 1737 - 1740.

  1192. Autor/innen: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Byoung-Ho Cheong; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
    "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 149 - 152.

    Zusätzliche Informationen

  1193. Autor/innen: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Byoung-Ho Cheong; Wanjun Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
    "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 21.09.2004 - 23.09.2004; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; S. 429 - 432.

    Zusätzliche Informationen

  1194. Autor/innen: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Byoung-Ho Cheong; Wanjun Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
    "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Vortrag: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 13.09.2004 - 17.09.2004; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), S. 201.

    Zusätzliche Informationen

  1195. Autor/innen: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Wanjun Park; Byoung-Ho Cheong; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
    "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 237 - 238.

    Zusätzliche Informationen

  1196. Autor/innen: Mahdi Pourfath, E360; A. Yazdanpanah Goharrizi; M. Fathipour; Hans Kosina, E360

    M. Pourfath, A. Yazdanpanah Goharrizi, M. Fathipour, H. Kosina:
    "On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs";
    Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 45 - 48.

    Zusätzliche Informationen

  1197. Autor/innen: Mahdi Pourfath, E360; A. Yazdanpanah Goharrizi; Hans Kosina, E360

    M. Pourfath, A. Yazdanpanah Goharrizi, H. Kosina:
    "The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons";
    Vortrag: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in: "Abstract Book", (2010), S. 419.

  1198. Autor/innen: Helmut Puchner, E360; P. Neary; Sheldon Aronowitz; Siegfried Selberherr, E360

    H. Puchner, P. Neary, S. Aronowitz, S. Selberherr:
    "A Transient Activation Model for Phosphorus after Sub-Amorphizing Channeling Implants";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 157 - 160.

  1199. Autor/innen: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "A Two-Dimensional Dopant Diffusion Model for Polysilicon";
    Vortrag: Meeting on Impurity Diffusion and Defects in Silicon and Related Materials, Athen; 03.05.1995 - 04.05.1995; in: "Abstracts Meeting on Impurity Diffusion and Defects in Silicon and Related Materials", (1995), S. 16 - 17.

  1200. Autor/innen: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "An Advanced Model for Dopant Diffusion in Polysilicon";
    Vortrag: Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences, Pittsburgh; 18.04.1994 - 20.04.1994; in: "Abstracts Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences", (1994), S. A13.

  1201. Autor/innen: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in: "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6; S. 109 - 112.

  1202. Autor/innen: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "Simulation of Graft Base Formation and Emitter Outdiffusion in High-Performance Bipolar LSIs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 165 - 168.

  1203. Autor/innen: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "Simulation of Ion Implantation Using the Four-Parameter Kappa Distribution Function";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 295 - 297.

  1204. Autor/innen: Katja Puschkarsky; Tibor Grasser, E360; T. Aichinger; W. Gustin; H. Reisinger

    K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
    "Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA (eingeladen); 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), S. 3B.5-1 - 3B.5-10.

  1205. Autor/innen: Katja Puschkarsky; H. Reisinger; T. Aichinger; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
    "Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 08.10.2017 - 12.10.2017; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2017), S. 1 - 5.

  1206. Autor/innen: Katja Puschkarsky; H. Reisinger; C. Schlünder; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, C. Schlünder, W. Gustin, T. Grasser:
    "Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 03.09.2018 - 06.09.2018; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2018), S. 218 - 221.

  1207. Autor/innen: Wolfgang Pyka, E360; Peter Fleischmann, E360; Bernhard Haindl, E384; Siegfried Selberherr, E360

    W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
    "Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 199 - 202.

    Zusätzliche Informationen

  1208. Autor/innen: Wolfgang Pyka, E360; Clemens Heitzinger, E360; N. Tamaoki; T. Takase; T. Ohmine; Siegfried Selberherr, E360

    W. Pyka, C. Heitzinger, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
    "Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 124 - 127.

    Zusätzliche Informationen

  1209. Autor/innen: Wolfgang Pyka, E360; Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    W. Pyka, H. Kirchauer, S. Selberherr:
    "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
    Vortrag: Micro- and Nano-Engineering Conference, Rom; 21.09.1999 - 23.09.1999; in: "Abstracts Micro-and-Nano-Engineering 99 Conf.", (1999), S. 305 - 306.

  1210. Autor/innen: Wolfgang Pyka, E360; Rui Martins, E360; Siegfried Selberherr, E360

    W. Pyka, R. Martins, S. Selberherr:
    "Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 16 - 19.

    Zusätzliche Informationen

  1211. Autor/innen: Wolfgang Pyka, E360; Siegfried Selberherr, E360

    W. Pyka, S. Selberherr:
    "Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization";
    Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; S. T4.3.3.

  1212. Autor/innen: Wolfgang Pyka, E360; Siegfried Selberherr, E360

    W. Pyka, S. Selberherr:
    "Three-Dimensional Simulation of TiN Magnetron Sputter Deposition";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 324 - 327.

  1213. Autor/innen: Wolfgang Pyka, E360; Siegfried Selberherr, E360; V. Sukharev

    W. Pyka, S. Selberherr, V. Sukharev:
    "Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 180 - 183.

  1214. Autor/innen: Wolfgang Pyka, E360; V. Sukharev; K. Kumar; S. Joh; J.E. McInerney

    W. Pyka, V. Sukharev, K. Kumar, S. Joh, J.E. McInerney:
    "A 3D Integrated Simulation of Across-Wafer Metal Stack Gap-Fill for Local Interconnect Applications";
    Poster: International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara; 07.09.1999 - 09.09.1999; in: "Proceedings of the 16th Intl. VLSI Multilevel Interconnection Conf.", (1999), S. 477 - 479.

  1215. Autor/innen: Rüdiger Quay, E360; H. Massler; W. Kellner; Tibor Grasser, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
    "Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 74 - 77.

    Zusätzliche Informationen

  1216. Autor/innen: Rüdiger Quay, E360; C. Moglestue; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
    "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
    Vortrag: Materials Research Society Spring Meeting (MRS), Strasbourg; 01.06.1999 - 04.06.1999; in: "Abstracts E-MRS Spring Meeting", (1999), S. L-7.

  1217. Autor/innen: Rüdiger Quay, E360; Vassil Palankovski, E360; M. Chertouk; A. Leuther; Siegfried Selberherr, E360

    R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr:
    "Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2000 - 13.12.2000; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4; S. 186 - 189.

    Zusätzliche Informationen

  1218. Autor/innen: Rüdiger Quay, E360; Vassil Palankovski, E360; R. Reuter; M. Schlechtweg; W. Kellner; Siegfried Selberherr, E360

    R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr:
    "III/V Device Optimization by Physics Based S-Parameter Simulation";
    Vortrag: International Symposium on Compound Semiconductors (ISCS), Berlin; 22.08.1999 - 26.08.1999; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8; S. 325 - 328.

  1219. Autor/innen: Rüdiger Quay, E360; R. Reuter; Tibor Grasser, E360; Siegfried Selberherr, E360

    R. Quay, R. Reuter, T. Grasser, S. Selberherr:
    "Thermal Simulations of III/V HEMTs";
    Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x; S. 87 - 92.

  1220. Autor/innen: Rüdiger Quay, E360; R. Reuter; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, R. Reuter, V. Palankovski, S. Selberherr:
    "S-Parameter Simulation of RF-HEMTs";
    Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 24.11.1998; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6; S. 13 - 18.

  1221. Autor/innen: Rüdiger Quay, E360; R. Schultheis; W. Kellner; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr:
    "A Review of Modeling Issues for RF Heterostructure Device Simulation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 432 - 435.

    Zusätzliche Informationen

  1222. Autor/innen: Michael Quell, E360; Georgios Diamantopoulos, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
    "Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation";
    Vortrag: High Performance Computing Conference (HPC), Borovets, Bulgaria; 02.09.2019 - 06.09.2019; in: "Procedings of the High Performance Computing Conference (HPC)", (2019), S. 45.

  1223. Autor/innen: Michael Quell, E360; Georgios Diamantopoulos, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
    "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
    Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic - virtual; 08.06.2020 - 11.06.2020; in: "Proceedings of the European Seminar on Computing (ESCO)", (2020), 1 S.

  1224. Autor/innen: Michael Quell, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    M. Quell, A. Hössinger, J. Weinbub:
    "Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes";
    Vortrag: Austrian-Slovenian HPC Meeting (ASHPC), Grundlsee; 31.05.2022 - 02.06.2022; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2022), ISBN: 978-3-200-08499-5; 1 S.

    Zusätzliche Informationen

  1225. Autor/innen: Michael Quell, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    M. Quell, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "Parallelized Construction of Extension Velocities for the Level-Set Method";
    Vortrag: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 08.09.2019 - 11.09.2019; in: "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), S. 42.

  1226. Autor/innen: Michael Quell, E360; Alexander Toifl, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
    "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 335 - 338.

    Zusätzliche Informationen

  1227. Autor/innen: Mustafa Radi, E360; Ernst Leitner, E360; E. Hollensteiner, E360; Siegfried Selberherr, E360

    M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
    "A Novel Diffusion Coupled Oxidation Model";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 472 - 475.

  1228. Autor/innen: Mustafa Radi, E360; Ernst Leitner, E360; E. Hollensteiner, E360; Siegfried Selberherr, E360

    M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
    "AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
    Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 57 - 60.

  1229. Autor/innen: Mustafa Radi, E360; Ernst Leitner, E360; E. Hollensteiner, E360; Siegfried Selberherr, E360

    M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
    "AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 331 - 334.

    Zusätzliche Informationen

  1230. Autor/innen: Mustafa Radi, E360; Ernst Leitner, E360; E. Hollensteiner, E360; Siegfried Selberherr, E360

    M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
    "Analytical Partial Differential Equation Modeling Using AMIGOS";
    Vortrag: International Conference on Artificial Intelligence and Soft Computing, Banff; 27.07.1997 - 01.08.1997; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence and Soft Computing", (1997), ISBN: 0-88986-229-x; S. 423 - 426.

  1231. Autor/innen: Mustafa Radi, E360; Siegfried Selberherr, E360

    M. Radi, S. Selberherr:
    "AMIGOS - A Rapid Prototyping System";
    Vortrag: International Conference on Applied Informatics, Innsbruck; 15.02.1999 - 18.02.1999; in: "Proceedings IASTED Intl. Conf. on Applied Informatics", (1999), ISBN: 0-88986-241-9; S. 372 - 374.

  1232. Autor/innen: Mustafa Radi, E360; Siegfried Selberherr, E360

    M. Radi, S. Selberherr:
    "Three-Dimensional Adaptive Mesh Relaxation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 193 - 196.

    Zusätzliche Informationen

  1233. Autor/innen: H. Reisinger; Tibor Grasser, E360; K. Ermisch; H. Nielen; W. Gustin; C. Schlünder

    H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder:
    "Understanding and Modeling AC BTI";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 S.

  1234. Autor/innen: H. Reisinger; Tibor Grasser, E360; K. Hofmann; W. Gustin; C. Schlünder

    H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder:
    "The Impact of Recovery on BTI Reliability Assessments";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 12 - 16.

    Zusätzliche Informationen

  1235. Autor/innen: H. Reisinger; Tibor Grasser, E360; C. Schlünder

    H. Reisinger, T. Grasser, C. Schlünder:
    "A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS";
    Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 30 - 35.

  1236. Autor/innen: H. Reisinger; Tibor Grasser, E360; C. Schlunder; W. Gustin

    H. Reisinger, T. Grasser, C. Schlunder, W. Gustin:
    "The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 7 - 15.

  1237. Autor/innen: H. Reisinger; R. P. Vollertsen; Paul-Jürgen Wagner, E360; T. Huttner; A. Martin; S. Aresu; W. Gustin; Tibor Grasser, E360; C. Schlünder

    H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
    "The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides";
    Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), S. 1 - 6.

  1238. Autor/innen: Tobias Reiter, E360; Xaver Klemenschits, E360; Lado Filipovic, E360

    T. Reiter, X. Klemenschits, L. Filipovic:
    "Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 34 - 35.

  1239. Autor/innen: Gerald Rescher; G. Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9; S. 10.8.1 - 10.8.4.

    Zusätzliche Informationen

  1240. Autor/innen: Felipe Ribeiro, E360; Karl Rupp, E360; Tibor Grasser, E360

    F. Ribeiro, K. Rupp, T. Grasser:
    "Parallel Solver Study for Solving the Boltzmann Transport Equation using Spherical Harmonics Expansions on Supercomputers";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 97 - 98.

  1241. Autor/innen: Karl Riedling, E366; Siegfried Selberherr, E360
    Andere beteiligte Personen: Freddy Malpica; Andrés Tremante; Friedrich Welsch

    K. Riedling, S. Selberherr:
    "A Flexible Web-Based Publication Database";
    Vortrag: International Conference on Education and Information Systems: Technologies and Applications (EISTA), Orlando, Florida, USA; 20.07.2006 - 23.07.2006; in: "Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006)", F. Malpica, A. Tremante, F. Welsch (Hrg.); International Institute of Informatics and Systemics (IIIS), (2006), ISBN: 980-6560-79-5; S. 262 - 267.

    Zusätzliche Informationen

  1242. Autor/innen: Karl Riedling, E366; Siegfried Selberherr, E360

    K. Riedling, S. Selberherr:
    "A Web-Based Publication Database for Performance Evaluation and Research Documentation";
    Vortrag: International Conference for Engineering Education (ICEE), San Juan, Puerto Rico; 23.07.2006 - 28.07.2006; in: "Proceedings of the ICEE 2006", International Network for Engineering Education and Research, (2006), ISBN: 1-58874-648-8; S. R2F-5 - R2F-10.

    Zusätzliche Informationen

  1243. Autor/innen: Gerhard Rieger, E360; Stefan Halama, E360; Siegfried Selberherr, E360

    G. Rieger, S. Halama, S. Selberherr:
    "A Graphical Editor for TCAD Purposes";
    Poster: Conference on Geometric Design, Nashville; 30.12.1995; in: "Abstracts SIAM Conf. On Geometric Design", (1995), S. A17.

  1244. Autor/innen: Gerhard Rieger, E360; Stefan Halama, E360; Siegfried Selberherr, E360

    G. Rieger, S. Halama, S. Selberherr:
    "A Programmable Tool for Interactive Wafer-State Level Data Processing";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 58 - 61.

    Zusätzliche Informationen

  1245. Autor/innen: Gerhard Rieger, E360; Siegfried Selberherr, E360

    G. Rieger, S. Selberherr:
    "The PIF Editor - a Data Processor for the VISTA TCAD Framework";
    Vortrag: High Performance Computing Asia Conference, Taipei; 18.09.1995 - 22.09.1995; in: "Proceedings High Performance Computing Asia 1995 Conference", (1995), Paper-Nr. el-036, 11 S.

  1246. Autor/innen: Ch. Ringhofer; Peter A. Markowich; Siegfried Selberherr, E360; M. Lentini

    Ch. Ringhofer, P. Markowich, S. Selberherr, M. Lentini:
    "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations";
    Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 6.

  1247. Autor/innen: Francio Rodrigues, E360; Luiz Felipe Aguinsky, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub:
    "3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 32 - 33.

  1248. Autor/innen: Francio Rodrigues, E360; Luiz Felipe Aguinsky, E360; Alexander Toifl, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Hössinger, J. Weinbub:
    "Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 101 - 102.

  1249. Autor/innen: Francio Rodrigues, E360; Luiz Felipe Aguinsky, E360; Alexander Toifl, E360; Alexander Scharinger, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub:
    "Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 229 - 232.

    Zusätzliche Informationen

  1250. Autor/innen: Rodrigo Rodriguez-Torres, E360; Edmundo Gutierrez; Robert Klima, E360; Siegfried Selberherr, E360

    R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
    "Three-Dimensional Analysis of a MAGFET at 300 K and 77 K";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 151 - 154.

  1251. Autor/innen: Rodrigo Rodriguez-Torres, E360; Edmundo Gutierrez; A. Sarmiento; Siegfried Selberherr, E360

    R. Rodriguez-Torres, E. Gutierrez, A. Sarmiento, S. Selberherr:
    "Macro-Modeling for MOS Device Simulation";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Oranjestad; 17.04.2002 - 19.04.2002; in: "Proceedings of the ICCDCS 2002", D012 (2002), ISBN: 0-7803-7380-4; S. 1 - 5.

  1252. Autor/innen: Frederic Roger; Anderson P. Singulani, E360; Sara Carniello; Lado Filipovic, E360; Siegfried Selberherr, E360

    F. Roger, A. P. Singulani, S. Carniello, L. Filipovic, S. Selberherr:
    "Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation";
    Vortrag: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 01.09.2015 - 04.09.2015; in: "Proceedings of the 6th International Workshop on CMOS Variability (VARI)", (2015), ISBN: 978-1-5090-0071-5; S. 39 - 44.

    Zusätzliche Informationen

  1253. Autor/innen: Gunnar Andreas Rott; H. Nielen; H. Reisinger; W. Gustin; S. E. Tyaginov, E360; Tibor Grasser, E360

    G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser:
    "Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 73 - 77.

  1254. Autor/innen: Gunnar Andreas Rott; K. Rott; H. Reisinger; W. Gustin; Tibor Grasser, E360

    G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
    "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 40.

  1255. Autor/innen: K. Rott; D. Schmitt-Landsiedel, CoAutor U. Schmi ...; H. Reisinger; Gunnar Andreas Rott; G Georgakos; C Schluender; S. Aresu; W. Gustin; Tibor Grasser, E360

    K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G.A. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser:
    "Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 31 - 34.

  1256. Autor/innen: Martin Rottinger, E360; Norbert Seifert; Siegfried Selberherr, E360

    M. Rottinger, N. Seifert, S. Selberherr:
    "Analysis of AVC Measurements";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 344 - 347.

  1257. Autor/innen: Martin Rottinger, E360; Norbert Seifert; Siegfried Selberherr, E360

    M. Rottinger, N. Seifert, S. Selberherr:
    "Simulation of AVC Measurements";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 284 - 287.

    Zusätzliche Informationen

  1258. Autor/innen: Martin Rottinger, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    M. Rottinger, T. Simlinger, S. Selberherr:
    "Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS-NT";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 440 - 443.

    Zusätzliche Informationen

  1259. Autor/innen: Marco Rovitto, E360; Hajdin Ceric, E360

    M. Rovitto, H. Ceric:
    "Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias";
    Vortrag: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 550 - 556.

    Zusätzliche Informationen

  1260. Autor/innen: Marco Rovitto, E360; Wolfhard Zisser, E360; Hajdin Ceric, E360

    M. Rovitto, W. H. Zisser, H. Ceric:
    "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015).

  1261. Autor/innen: Marco Rovitto, E360; Wolfhard Zisser, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser:
    "Electromigration Modelling of Void Nucleation in Open Cu-TSVs";
    Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 19.04.2015 - 22.04.2015; in: "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", IEEE Xplore, (2015), ISBN: 978-1-4799-9949-1; 5 S.

    Zusätzliche Informationen

  1262. Autor/innen: Bernhard Ruch; Markus Jech, E360; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, M. Jech, G. Pobegen, T. Grasser:
    "Applicability of Shockley-Read-Hall Theory for Interface States";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 12.12.2020 - 18.12.2020; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), S. 449 - 452.

    Zusätzliche Informationen

  1263. Autor/innen: Bernhard Ruch; Gregor Pobegen; Christian Schleich, E360; Tibor Grasser, E360

    B. Ruch, G. Pobegen, C. Schleich, T. Grasser:
    "Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6.

    Zusätzliche Informationen

  1264. Autor/innen: Florian Rudolf, E360; Andreas Morhammer, E360; Karl Rupp, E360; Josef Weinbub, E360

    F. Rudolf, A. Morhammer, K. Rupp, J. Weinbub:
    "VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL";
    Vortrag: Austrian HPC Meeting (AHPC), Grundlsee; 01.03.2017 - 03.03.2017; in: "Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC)", (2017), 1 S.

  1265. Autor/innen: Florian Rudolf, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    F. Rudolf, K. Rupp, S. Selberherr:
    "ViennaMesh - a Highly Flexible Meshing Framework";
    Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 S.

  1266. Autor/innen: Florian Rudolf, E360; Josef Weinbub, E360; Karl Rupp, E360; Andreas Morhammer, E360; Siegfried Selberherr, E360

    F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
    "Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality";
    Vortrag: International Meshing Roundtable (IMR), Austin, Texas, USA; 11.10.2015 - 14.10.2015; in: "Proceedings of the 24th International Meshing Roundtable (IMR24)", (2015), 5 S.

  1267. Autor/innen: Florian Rudolf, E360; Josef Weinbub, E360; Karl Rupp, E360; Andreas Morhammer, E360; Siegfried Selberherr, E360

    F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
    "Template-Based Mesh Generation for Semiconductor Devices";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 217 - 220.

    Zusätzliche Informationen

  1268. Autor/innen: Florian Rudolf, E360; Josef Weinbub, E360; Karl Rupp, E360; Peter Resutik; Siegfried Selberherr, E360

    F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, S. Selberherr:
    "Mesh Healing for TCAD Simulations";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 66.

  1269. Autor/innen: Florian Rudolf, E360; Yannick Wimmer, E360; Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    F. Rudolf, Y. Wimmer, J. Weinbub, K. Rupp, S. Selberherr:
    "Mesh Generation Using Dynamic Sizing Functions";
    Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 191.

  1270. Autor/in: Karl Rupp, E360

    K. Rupp:
    "Deterministic Numerical Solution of the Boltzmann Transport Equation";
    Vortrag: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien, Austria (eingeladen); 03.11.2010 - 05.11.2010; in: "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), S. 7 - 8.

  1271. Autor/in: Karl Rupp, E360

    K. Rupp:
    "Increased Efficiency In Finite Element Computations Through Template Metaprogramming";
    Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 12.04.2010 - 15.04.2010; in: "Proceedings of the Spring Simulation Multiconference 2010", ACM, (2010), ISBN: 978-1-4503-0069-8; 1 S.

    Zusätzliche Informationen

  1272. Autor/in: Karl Rupp, E360

    K. Rupp:
    "Scaling Deterministic Solution of the Boltzmann Transport Equation on Heterogeneous Computing Platforms";
    Vortrag: Scalable Methods for Kinetic Equations, Oak Ridge, TN, USA (eingeladen); 19.10.2015 - 23.10.2015; in: "Scalable Methods for Kinetic Equations - Presentation Titles and Abstracts", (2015), S. 17.

  1273. Autor/in: Karl Rupp, E360

    K. Rupp:
    "Symbolic Integration at Compile Time in Finite Element Methods";
    Vortrag: International Symposium on Symbolic and Algebraic Computation (ISSAC), Munich; 25.07.2010 - 28.07.2010; in: "Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation", (2010), S. 347 - 354.

  1274. Autor/in: Karl Rupp, E360

    K. Rupp:
    "The High-Level Linear Algebra Library ViennaCL and Its Applications";
    Vortrag: GPU Technology Conference, San Jose, California, USA; 14.05.2012 - 17.05.2012; in: "Abstracts of GPU Technology Conference", (2012), S. 77.

  1275. Autor/innen: Karl Rupp, E360; Satish Balay; Jed Brown; Matthew Knepley; Lois Curfman McInnes; Barry Smith

    K. Rupp, S. Balay, J. Brown, M. Knepley, L. McInnes, B. Smith:
    "On The Evolution Of User Support Topics in Computational Science and Engineering Software";
    Poster: Computational Science & Engineering Software Sustainability and Productivity Challenges (CSESSP Challenges), Rockville, MD, USA; 15.10.2015 - 16.10.2015; in: "Computational Science and Engineering Software Sustainability and Productivity Challenges (CSESSP) Workshop", (2015), S. 1 - 2.

  1276. Autor/innen: Karl Rupp, E360; Markus Bina; Yannick Wimmer, E360; Ansgar Jungel; Tibor Grasser, E360

    K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser:
    "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 365 - 368.

    Zusätzliche Informationen

  1277. Autor/innen: Karl Rupp, E360; Tibor Grasser, E360; Ansgar Jüngel, E101-01

    K. Rupp, T. Grasser, A. Jüngel:
    "A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
    Vortrag: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in: "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9; S. 7 - 8.

  1278. Autor/innen: Karl Rupp, E360; Tibor Grasser, E360; Ansgar Jüngel

    K. Rupp, T. Grasser, A. Jüngel:
    "Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 151 - 155.

    Zusätzliche Informationen

  1279. Autor/innen: Karl Rupp, E360; Tibor Grasser, E360; Ansgar Jüngel

    K. Rupp, T. Grasser, A. Jüngel:
    "On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S.

    Zusätzliche Informationen

  1280. Autor/innen: Karl Rupp, E360; Tibor Grasser, E360; Ansgar Jüngel

    K. Rupp, T. Grasser, A. Jüngel:
    "Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 147 - 150.

    Zusätzliche Informationen

  1281. Autor/innen: Karl Rupp, E360; Tibor Grasser, E360; Ansgar Jüngel

    K. Rupp, T. Grasser, A. Jüngel:
    "Recent advances in the spherical harmonics expansion of the Boltzmann transport equation";
    Vortrag: Congresso Nationale Simai 2012, Turin, Italy; 25.06.2012 - 28.06.2012; in: "Abstracts of Congresso Nationale Simai 2012", (2012), S. 183.

  1282. Autor/innen: Karl Rupp, E360; Tibor Grasser, E360; Ansgar Jüngel, E101-01

    K. Rupp, T. Grasser, A. Jüngel:
    "System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 159 - 162.

    Zusätzliche Informationen

  1283. Autor/innen: Karl Rupp, E360; Ansgar Jüngel; Tibor Grasser, E360

    K. Rupp, A. Jüngel, T. Grasser:
    "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
    Vortrag: Facing the Multicore Challenge II, Karlsruhe, Germany; 28.09.2011 - 30.09.2011; in: "Proceedings of Facing the Multicore Challenge II", (2011), 11 S.

  1284. Autor/innen: Karl Rupp, E360; C. Jungemann; Markus Bina; Ansgar Jüngel; Tibor Grasser, E360

    K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser:
    "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 19 - 22.

  1285. Autor/innen: Karl Rupp, E360; Peter Willibald Lagger; Tibor Grasser, E360

    K. Rupp, P. Lagger, T. Grasser:
    "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
    Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 109 - 110.

  1286. Autor/innen: Karl Rupp, E360; Andreas Morhammer, E360; Tibor Grasser, E360; Ansgar Jüngel

    K. Rupp, A. Morhammer, T. Grasser, A. Jüngel:
    "Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors";
    Vortrag: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 16.05.2016 - 18.05.2016; in: "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", Firenze University Press, (2016), ISBN: 978-88-6655-967-2; S. 104.

  1287. Autor/innen: Karl Rupp, E360; Florian Rudolf, E360; Josef Weinbub, E360

    K. Rupp, F. Rudolf, J. Weinbub:
    "A Discussion of Selected Vienna-Libraries for Computational Science";
    Vortrag: C++Now, Aspen, CO, USA; 12.05.2013 - 17.05.2013; in: "Proceedings of C++Now (2013)", (2013), 10 S.

  1288. Autor/innen: Karl Rupp, E360; Florian Rudolf, E360; Josef Weinbub, E360

    K. Rupp, F. Rudolf, J. Weinbub:
    "Features of ViennaCL in PETSc";
    Vortrag: Austrian HPC Meeting (AHPC), Linz; 19.02.2018 - 21.02.2018; in: "Book of Abstracts of the 2018 Austrian HPC Meeting (AHPC)", (2018), S. 18.

  1289. Autor/innen: Karl Rupp, E360; Florian Rudolf, E360; Josef Weinbub, E360

    K. Rupp, F. Rudolf, J. Weinbub:
    "ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs";
    Vortrag: International Workshop on GPUs and Scientific Applications (GPUScA 2010), Vienna; 11.09.2010; in: "Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010)", (2010), S. 51 - 56.

  1290. Autor/innen: Karl Rupp, E360; Florian Rudolf, E360; Josef Weinbub, E360; Ansgar Jungel; Tibor Grasser, E360

    K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser:
    "Automatic Finite Volume Discretizations Through Symbolic Computations";
    Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 192.

  1291. Autor/innen: Karl Rupp, E360; Barry Smith

    K. Rupp, B. Smith:
    "On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators";
    Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 19.05.2013 - 24.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), S. 1.

  1292. Autor/innen: Karl Rupp, E360; Philippe Tillet; Ansgar Jungel; Tibor Grasser, E360

    K. Rupp, Ph. Tillet, A. Jungel, T. Grasser:
    "Achieving Portable High Performance for Iterative Solvers on Accelerators";
    Vortrag: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 10.03.2014 - 14.03.2014; in: "Book of Abstracts", (2014), S. 815.

  1293. Autor/innen: Karl Rupp, E360; Philippe Tillet; Florian Rudolf, E360; Josef Weinbub, E360

    K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub:
    "ViennaCL - Portable High Performance at High Convenience";
    Vortrag: The European Conference on Numerical Mathematics and Advanced Applications (ENUMATH), Lausanne, Switzerland (eingeladen); 26.08.2013 - 30.08.2013; in: "ENUMATH 2013 Proceedings", (2013), S. 1 - 2.

  1294. Autor/innen: Karl Rupp, E360; Philippe Tillet; Florian Rudolf, E360; Josef Weinbub, E360; Tibor Grasser, E360; Ansgar Jüngel, E101-01

    K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel:
    "Performance Portability Study of Linear Algebra Kernels in OpenCL";
    Vortrag: International Workshop on OpenCL (IWOCL), Bristol, UK; 12.05.2014 - 13.05.2014; in: "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7; 11 S.

    Zusätzliche Informationen

  1295. Autor/innen: Karl Rupp, E360; Philippe Tillet; Barry Smith; Tibor Grasser, E360; Ansgar Jungel

    K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel:
    "A Note on the GPU Acceleration of Eigenvalue Computations";
    Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 21.09.2013 - 27.09.2013; in: "AIP Proceedings, volume 1558", (2013), S. 1536 - 1539.

  1296. Autor/innen: Karl Rupp, E360; Josef Weinbub, E360

    K. Rupp, J. Weinbub:
    "A Computational Scientist's Perspective on Current and Future Hardware Architectures";
    Vortrag: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in: "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), S. 24.

  1297. Autor/innen: Karl Rupp, E360; Josef Weinbub, E360; Florian Rudolf, E360

    K. Rupp, J. Weinbub, F. Rudolf:
    "Automatic Performance Optimization in ViennaCL for GPUs";
    Vortrag: Workshop on Parallel/High-Performance Object-Oriented Scientific Computing, Reno, Nevada, USA; 17.10.2010 - 21.10.2010; in: "Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing", (2010), 6 S.

    Zusätzliche Informationen

  1298. Autor/innen: J. T. Ryan; P. M. Lenahan; Tibor Grasser, E360; H. Enichlmair

    J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
    "Recovery-Free Electron Spin Resonance Observations of NBTI Degradation";
    Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 43 - 49.

  1299. Autor/innen: J. T. Ryan; P. M. Lenahan; Tibor Grasser, E360; H. Enichlmair

    J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
    "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach";
    Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 42 - 45.

  1300. Autor/innen: Gerhard Rzepa, E360; J. Franco; A Subirats; Markus Jech, E360; A Chasin; Alexander Grill, E360; Michael Waltl, E360; Theresia Knobloch, E360; Bernhard Stampfer; T. Chiarella; N. Horiguchi; L. A. Ragnarsson; D Linten; Ben Kaczer; Tibor Grasser, E360

    G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser:
    "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks";
    Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. XT-11.1 - XT-11.6.

  1301. Autor/innen: Gerhard Rzepa, E360; Wolfgang Gös, E360; Ben Kaczer; Tibor Grasser, E360

    G. Rzepa, W. Gös, B. Kaczer, T. Grasser:
    "Characterization and Modeling of Reliability Issues in Nanoscale Devices";
    Vortrag: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal (eingeladen); 24.05.2015 - 27.05.2015; in: "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9; S. 2445 - 2448.

  1302. Autor/innen: Gerhard Rzepa, E360; Wolfgang Gös, E360; Gunnar Andreas Rott; K. Rott; Markus Karner, E360; Christian Kernstock, E360; Ben Kaczer; H. Reisinger; Tibor Grasser, E360

    G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser:
    "Physical Modeling of NBTI: From Individual Defects to Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 81 - 84.

    Zusätzliche Informationen

  1303. Autor/innen: Gerhard Rzepa, E360; Michael Waltl, E360; Wolfgang Gös, E360; Ben Kaczer; J. Franco; T. Chiarella; N. Horiguchi; Tibor Grasser, E360

    G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
    "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
    Vortrag: International Symposium on VLSI Technology, Honolulu, HI, USA; 14.06.2016 - 16.06.2016; in: "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0; S. 208 - 209.

  1304. Autor/innen: Gerhard Rzepa, E360; Michael Waltl, E360; Wolfgang Gös, E360; Ben Kaczer; Tibor Grasser, E360

    G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
    "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 144 - 147.

    Zusätzliche Informationen

  1305. Autor/innen: Rainer Sabelka, E360; Christian Harlander, E360; Siegfried Selberherr, E360

    R. Sabelka, C. Harlander, S. Selberherr:
    "Propagation of RF Signals in Microelectronic Structures";
    Vortrag: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (eingeladen); 14.05.2000 - 18.05.2000; in: "Abstracts Challenges in Predictive Process Simulation Meeting", (2000), S. 50 - 51.

  1306. Autor/innen: Rainer Sabelka, E360; Christian Harlander, E360; Siegfried Selberherr, E360

    R. Sabelka, C. Harlander, S. Selberherr:
    "The State of the Art in Interconnect Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA (eingeladen); 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 6 - 11.

    Zusätzliche Informationen

  1307. Autor/innen: Rainer Sabelka, E360; K. Koyama; Siegfried Selberherr, E360

    R. Sabelka, K. Koyama, S. Selberherr:
    "STAP - A Finite Element Simulator for Three-Dimensional Thermal Analysis of Interconnect Structures";
    Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 621 - 625.

  1308. Autor/innen: Rainer Sabelka, E360; Rui Martins, E360; Siegfried Selberherr, E360

    R. Sabelka, R. Martins, S. Selberherr:
    "Accurate Layout-Based Interconnect Analysis";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (1998), ISBN: 3-211-83208-4; S. 336 - 339.

    Zusätzliche Informationen

  1309. Autor/innen: Rainer Sabelka, E360; Siegfried Selberherr, E360

    R. Sabelka, S. Selberherr:
    "SAP - A Program Package for Three-Dimensional Interconnect Simulation";
    Poster: IEEE International Interconnect Technology Conference (IITC), San Francisco; 01.06.1998 - 03.06.1998; in: "Proceedings Intl. Interconnect Technology Conf.", (1998), ISBN: 0-7803-4286-0; S. 250 - 252.

  1310. Autor/innen: T. Sadi; Ewan Towie; Mihail Nedjalkov, E360; A Asenov; Siegfried Selberherr, E360

    T. Sadi, E. Towie, M. Nedjalkov, A. Asenov, S. Selberherr:
    "Monte Carlo Particles in Quantum Wires: Effects of the Confinement";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 05.06.2017 - 09.06.2017; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), S. 89 - 90.

  1311. Autor/innen: T. Sadi; Ewan Towie; Mihail Nedjalkov, E360; Craig Riddet; Craig Alexander; L. Wang; Vihar Georgiev; Andrew Brown; C. Millar; A Asenov

    T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov:
    "One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 23 - 26.

    Zusätzliche Informationen

  1312. Autor/innen: A.S. Saleh, Katholieke Unive ...; Houman Zahedmanesh; Hajdin Ceric, E360; Kristof Croes; I. De Wolf

    A. Saleh, H. Zahedmanesh, H. Ceric, K. Croes, I. De Wolf:
    "Dynamics of Electromigration Voids in Cu Interconnects: Investigation Using a Physics-Based Model Augmented by Neural Networks";
    Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 27.06.2022 - 30.06.2022; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), ISBN: 978-1-6654-8646-0; S. 22 - 27.

    Zusätzliche Informationen

  1313. Autor/innen: Patrick Sanan; Olaf Schenk; Matthias Bollhoefer; Karl Rupp, E360; Dave A. May

    P. Sanan, O. Schenk, M. Bollhoefer, K. Rupp, D. May:
    "Preconditioners for Stokes Flow with Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing Via Local Incomplete Factorization";
    Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 258.

  1314. Autor/innen: Franz Schanovsky, E360; Oskar Baumgartner, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser:
    "A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 1 - 4.

    Zusätzliche Informationen

  1315. Autor/innen: Franz Schanovsky, E360; Oskar Baumgartner, E360; Tibor Grasser, E360

    F. Schanovsky, O. Baumgartner, T. Grasser:
    "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 15 - 18.

    Zusätzliche Informationen

  1316. Autor/innen: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping";
    Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 163 - 166.

    Zusätzliche Informationen

  1317. Autor/innen: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "Advanced Modeling of Charge Trapping at Oxide Defects";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom (eingeladen); 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 451 - 458.

    Zusätzliche Informationen

  1318. Autor/innen: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "Hole Capture into Oxide Defects in MOS Structures from First Principles";
    Poster: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in: "Abstract Book", (2010), S. 435.

  1319. Autor/innen: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "Mulit-Phonon Hole-Trapping from First-Principles";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 54.

  1320. Autor/innen: Franz Schanovsky, E360; Tibor Grasser, E360

    F. Schanovsky, T. Grasser:
    "On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability";
    Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  1321. Autor/innen: Franz Schanovsky, E360; Tibor Grasser, E360

    F. Schanovsky, T. Grasser:
    "On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability";
    Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 17 - 21.

  1322. Autor/innen: Alexander Scharinger, E360; Paul Manstetten, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360

    A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
    "Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 39 - 42.

    Zusätzliche Informationen

  1323. Autor/innen: Jean-Yean Scharlotta; Gennadi Bersuker; S. E. Tyaginov, E360; Chadwing Young; Gaddi Haase; Gerhard Rzepa; Michael Waltl, E360; Talha Chohan; Subramanian Iyer; Alexander Kotov; Cristian Zambelli; Fernando Guarin; Francesco Maria Puglisi; C Ostermaier

    J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier:
    "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 4.

    Zusätzliche Informationen

  1324. Autor/innen: Christian Schleich, E360; Judith Berens; Gerhard Rzepa, E360; Gregor Pobegen; Gerald Rescher; S. E. Tyaginov, E360; Tibor Grasser, E360; Michael Waltl, E360

    C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
    "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019).

    Zusätzliche Informationen

  1325. Autor/innen: C. Schlünder; H. Reisinger; W. Gustin; Tibor Grasser, E360

    C. Schlünder, H. Reisinger, W. Gustin, T. Grasser:
    "A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery";
    Vortrag: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 13.09.2010 - 15.09.2010; in: "GMM- Fachbericht", 66 (2010), S. 33 - 40.

  1326. Autor/innen: Christian Schmeiser; Siegfried Selberherr, E360; Richard Weiss

    Ch. Schmeiser, S. Selberherr, R. Weiss:
    "On Scaling and Norms for Semiconductor Device Simulation";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 501 - 506.

  1327. Autor/innen: Martin Schrems; Clemens Schrank, AC²T; Joerg Siegert; J. Kraft; Jordi Teva; Siegfried Selberherr, E360

    M. Schrems, C. Schrank, J. Siegert, J. Kraft, J. Teva, S. Selberherr:
    "Metrology Requirements for Manufacturing 3D Integrated ICs";
    Vortrag: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA (eingeladen); 25.03.2013 - 28.03.2013; in: "Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), S. 137 - 139.

  1328. Autor/innen: Martin Schrems; Joerg Siegert; P. Dorfi; J. Kraft; E. Stueckler; F. Schrank; Siegfried Selberherr, E360

    M. Schrems, J. Siegert, P. Dorfi, J. Kraft, E. Stueckler, F. Schrank, S. Selberherr:
    "Manufacturing of 3D Integrated Sensors and Circuits";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Venice, Italy (eingeladen); 22.09.2014 - 26.09.2014; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2014), ISBN: 978-1-4799-4377-7; S. 162 - 165.

    Zusätzliche Informationen

  1329. Autor/innen: Gerhard Schrom, E360; De Vivek; Siegfried Selberherr, E360

    G. Schrom, De Vivek, S. Selberherr:
    "VLSI Performance Metric Based on Minimum TCAD Simulations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 25 - 28.

    Zusätzliche Informationen

  1330. Autor/innen: Gerhard Schrom, E360; D. Liu; Claus Fischer, E360; Christoph Pichler, E360; Ch. Svensson; Siegfried Selberherr, E360

    G. Schrom, D. Liu, C. Fischer, C. Pichler, Ch. Svensson, S. Selberherr:
    "VLSI Performance Analysis Method for Low-Voltage Circuit Operation";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 328 - 330.

  1331. Autor/innen: Gerhard Schrom, E360; D. Liu; Christoph Pichler, E360; Ch. Svensson; Siegfried Selberherr, E360

    G. Schrom, D. Liu, C. Pichler, Ch. Svensson, S. Selberherr:
    "Analysis of Ultra-Low-Power CMOS With Process and Device Simulation";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 679 - 682.

  1332. Autor/innen: Gerhard Schrom, E360; Siegfried Selberherr, E360

    G. Schrom, S. Selberherr:
    "Ultra-Low-Power CMOS Technologies";
    Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 09.10.1996 - 12.10.1996; in: "Proceedings CAS 96 Conf.", (1996), ISBN: 0-7803-3233-4; S. 237 - 246.

  1333. Autor/innen: Gerhard Schrom, E360; Siegfried Selberherr, E360; F. Unterleitner; J. Trontelj; V. Kunc

    G. Schrom, S. Selberherr, F. Unterleitner, J. Trontelj, V. Kunc:
    "Analysis of a CMOS-Compatible Vertical Bipolar Transistor";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 261 - 264.

    Zusätzliche Informationen

  1334. Autor/innen: Gerhard Schrom, E360; Siegfried Selberherr, E360; F. Unterleitner; J. Trontelj; V. Kunc

    G. Schrom, S. Selberherr, F. Unterleitner, J. Trontelj, V. Kunc:
    "Overvoltage Protection with a CMOS-Compatible BJT";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 899 - 902.

  1335. Autor/innen: Gerhard Schrom, E360; Andreas Stach, E360; Siegfried Selberherr, E360

    G. Schrom, A. Stach, S. Selberherr:
    "A Charge Based MOSFET Model for Low-Voltage Mixed-Signal Applications";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 495 - 498.

  1336. Autor/innen: Gerhard Schrom, E360; Andreas Stach, E360; Siegfried Selberherr, E360

    G. Schrom, A. Stach, S. Selberherr:
    "A Consistent Dynamic MOSFET Model for Low-Voltage Applications";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 177 - 178.

    Zusätzliche Informationen

  1337. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Numerical Analysis of Breakdown Phenomena in MOSFETs";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8; S. 270 - 274.

  1338. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Two Dimensional Analysis of the Avalanche Effect in MOS Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), S. 113 - 115.

  1339. Autor/innen: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Zweidimensionale Simulation des Lawinendurchbruchs in MOS Transistoren";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1981), S. 68 - 72.

  1340. Autor/innen: Philipp Schwaha, E360; Oskar Baumgartner, E360; Rene Heinzl, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Classical Approximation of the Scattering Induced Wigner Correction Equation";
    Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 177 - 180.

    Zusätzliche Informationen

  1341. Autor/innen: Philipp Schwaha, E360; Johann Cervenka, E360; Mihail Nedjalkov, E360; Todor Gurov; G. Arsov; A. Misev; Aleksandar Zoric; S. Ilic

    P. Schwaha, J. Cervenka, M. Nedjalkov, T. Gurov, G. Arsov, A. Misev, A. Zoric, S. Ilic:
    "Computational Electronics on GRID: A Mixed Mode Carrier Transport Model";
    Vortrag: International Conference On Applications Of Mathematics In Technical And Natural Sciences, Sozopol (Bulgaria); 22.06.2009 - 27.06.2009; in: "1st International Conference On Applications Of Mathematics In Technical And Natural Sciences", 1186 (2009), ISBN: 978-0-7354-0752-7; S. 206 - 214.

    Zusätzliche Informationen

  1342. Autor/innen: Philipp Schwaha, E360; C Giani; Rene Heinzl, E360; Siegfried Selberherr, E360

    P. Schwaha, C. Giani, R. Heinzl, S. Selberherr:
    "Visualization of Polynomials Used in Series Expansions";
    Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 139 - 148.

  1343. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360

    P. Schwaha, R. Heinzl:
    "Marching Simplices";
    Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; S. 1651 - 1654.

  1344. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Wolfgang Brezna, E362; Jürgen Smoliner, E362; H. Enichlmair; R. Minixhofer; Tibor Grasser, E360

    P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
    "Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides";
    Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 469 - 473.

  1345. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Wolfgang Brezna, E362; Jürgen Smoliner, E362; H. Enichlmair; R. Minixhofer; Tibor Grasser, E360

    P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
    "Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; S. 365 - 370.

  1346. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Georg Mach; Claudia Pogoreutz; Susanne Fister; Siegfried Selberherr, E360

    P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr:
    "A High Performance Webapplication for an Electro-Biological Problem";
    Vortrag: 21st European Conference on Modelling and Simulation, Prag; 04.06.2007 - 06.06.2007; in: "Proceedings 21st European Conference on Modelling and Simulation", (2007), ISBN: 978-0-9553018-2-7; S. 218 - 222.

    Zusätzliche Informationen

  1347. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Georg Mach; Claudia Pogoreutz; Susanne Fister; Siegfried Selberherr, E360

    P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr:
    "Electro-Biological Simulation using a Web Front-End";
    Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 493 - 495.

  1348. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Mihail Nedjalkov, E360

    P. Schwaha, R. Heinzl, M. Nedjalkov:
    "The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example";
    Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5.

  1349. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Michael Spevak, E360; Tibor Grasser, E360

    P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
    "A Generic Approach to Scientific Computing";
    Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 137.

  1350. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Michael Spevak, E360; Tibor Grasser, E360

    P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
    "Advanced Equation Processing for TCAD";
    Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 64.

  1351. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Michael Spevak, E360; Tibor Grasser, E360

    P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
    "Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 235 - 238.

    Zusätzliche Informationen

  1352. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
    "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages";
    Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008).

  1353. Autor/innen: Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
    "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
    Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 6 S.

  1354. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Monte Carlo Investigations of Electron Decoherence due to Phonons";
    Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 48.

  1355. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 177 - 178.

  1356. Autor/innen: Philipp Schwaha, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Phonon-Induced Decoherence in Electron Evolution";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 74 - 75.

  1357. Autor/innen: P. Schwaha; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov; R. Georgieva

    P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov, R. Georgieva:
    "Stochastic Alternative to Newton's Acceleration";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), S. 77 - 78.

  1358. Autor/innen: Philipp Schwaha, E360; Markus Schwaha; Rene Heinzl, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    P. Schwaha, M. Schwaha, R. Heinzl, E. Ungersböck, S. Selberherr:
    "Simulation Methodologies for Scientific Computing - Modern Application Design";
    Vortrag: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in: "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-07-4; S. 270 - 276.

  1359. Autor/innen: Philipp Schwaha, E360; J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    P. Schwaha, J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "The Ultimate Equivalence Between Coherent Quantum and Classical Regimes";
    Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 152 - 153.

  1360. Autor/innen: Philipp Schwaha, E360; Franz Stimpfl, E360; Rene Heinzl, E360; Siegfried Selberherr, E360

    P. Schwaha, F. Stimpfl, R. Heinzl, S. Selberherr:
    "A Parallel Delaunay and Advancing Front Mesh Generation Approach";
    Vortrag: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in: "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 S.

  1361. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Aktuelle Entwicklungen der Mikroelektronik";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien (eingeladen); 29.09.1999 - 30.09.1999; in: "Proceedings Mikroelektronik, Elektrotechnik und Informationstechnik 1999", 116 (1999), S. 485 - 490.

    Zusätzliche Informationen

  1362. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "BAMBI - The Desire for the Impossible ?";
    Vortrag: Symposium on BAMBI, München (eingeladen); 25.02.1986; in: "Abstracts 1st Symposium on BAMBI", (1986).

  1363. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Bauelementsimulation";
    Vortrag: Physik in der Mikroelektronik, Bad Honnef (eingeladen); 07.10.1985 - 11.10.1985; in: "Symposium über Physik in der Mikroelektronik", (1985), S. 1 - 2.

  1364. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Current Transport Models for Engineering Applications";
    Vortrag: Advanced Research Workshop on Future Trends in Microelectronics, Ile de Bendor; 25.06.2001 - 29.06.2001; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: The Nano Millenium", (2001), ISBN: 0-471-21247-4; S. 54.

  1365. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Device and Process Modeling";
    Vortrag: International Symposium on Signal, Systems, and Electronics (ISSSE), Erlangen (eingeladen); 18.09.1989 - 20.09.1989; in: "Proceedings ISSSE 89", (1989), S. 333 - 338.

  1366. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Device Modeling and Physics";
    Vortrag: General Conference of the Condensed Matter Division of the European Physical Society, Lissabon (eingeladen); 09.04.1990 - 12.04.1990; in: "Europhysics Conference Abstracts", (1990), S. L38.

  1367. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Giving Silicon a Spin";
    Vortrag: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia (eingeladen); 05.01.2012 - 07.01.2012; in: "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 S.

  1368. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Low Temperature MOS Device Modeling";
    Vortrag: Meeting of the Electrochemical Society, Low Temperature Electronics and High Temperature Superconductors, Honolulu (eingeladen); 18.10.1987 - 23.10.1987; in: "172nd ECS Meeting", 87-2 (1987), S. 464.

  1369. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Low Temperature MOS Device Modeling";
    Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu (eingeladen); 18.10.1987 - 23.10.1987; in: "172nd ECS Meeting", 88-9 (1987), S. 70 - 86.

  1370. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Low-Temperature Operation";
    Vortrag: European School on Device Modelling, Bologna (eingeladen); 18.03.1991 - 20.03.1991; in: "Proceedings European School on Device Modelling", (1991), S. 71 - 100.

  1371. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Modeling Static and Dynamic Behavior of Power Devices";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA (eingeladen); 05.12.1983 - 07.12.1983; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", IEEE Cat.No 83CH1973-7 (1983), S. 71 - 74.

    Zusätzliche Informationen

  1372. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "MOS Device Modeling at Liquid-Nitrogen Temperature";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 11.12.1988 - 14.12.1988; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (1988), S. 496 - 499.

    Zusätzliche Informationen

  1373. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Numerical Modeling of MOS-Devices: Methods and Problems";
    Vortrag: International Short Course on New Problems and New Solutions for Device and Process Modelling, Dublin (eingeladen); 17.06.1985 - 18.06.1985; in: "Proceedings of the International Short Course on New Problems and New Solutions for Device and Process Modelling", (1985), ISBN: 0-906783-45-3; S. 122 - 137.

  1374. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Physical Models for Silicon VLSI";
    Vortrag: Short Course on Semiconductor Device Modelling, Leeds (eingeladen); 03.04.1989 - 07.04.1989; in: "Proceedings Short Course on Semiconductor Device Modelling", (1989), S. 70 - 88.

    Zusätzliche Informationen

  1375. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process and Device Modeling for VLSI";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis (eingeladen); 07.05.1984 - 09.05.1984; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1984), S. 1 - 45.

  1376. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process Modeling";
    Vortrag: Microcircuit Engineering Conference, Wien (eingeladen); 20.09.1988 - 22.09.1988; in: "Proceedings of the Microcircuit Engineering Conference", (1988), S. 605 - 610.

    Zusätzliche Informationen

  1377. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Prozeßsimulation: Stand der Technik";
    Vortrag: Verhandlungen der DPG, Frühjahrstagung Festkörperphysik, Regensburg (eingeladen); 25.03.1996 - 29.03.1996; in: "Verhandlungen der DPG", (1996), S. 1360.

  1378. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Recent Advances in Numerical Device Simulation";
    Vortrag: Microelectronic Seminar, Budapest (eingeladen); 10.10.1988 - 13.10.1988; in: "Abstracts Microelectronic Seminar 88", (1988), S. 1.

  1379. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Silicon Device Simulation";
    Vortrag: Austin Workshop on Process and Device Simulation, Austin, TX, USA (eingeladen); 17.03.1986 - 18.03.1986; in: "Proceedings of the Austin Workshop on Process and Device Simulation", (1986), S. 1.

  1380. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Some Comments on X3J3/S6.81 Chapter 3";
    Vortrag: Meeting of the Fortran Experts Group, Wien; 14.06.1982 - 17.06.1982; in: "Minutes of the Fortran Experts Group", X3J3/148 (1982), S. 109 - 110.

  1381. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "State of the Art of Computer/Mathematical Simulation Tools";
    Vortrag: Workshop on Modeling of Technology and Devices, Utrecht (eingeladen); 04.06.1986; in: "Abstracts of Modeling of Technology and Devices Workshop", (1986), S. 1.

  1382. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Status and Future of Solid-State Non-Volatile Memory";
    Vortrag: International Conference on Frontier Sciences, Beijing, China (eingeladen); 06.11.2019 - 07.11.2019; in: "Book of Abstracts of the International Conference on Frontier Sciences", (2019), S. 97.

  1383. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Technology Computer-Aided Design";
    Vortrag: International Conference on Science and Technology of Electron Devices (STEDCON), Kruger Park (eingeladen); 16.11.1992 - 18.11.1992; in: "Abstracts STEDCON 92 Conference", (1992), S. 26.

  1384. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Technology Computer-Aided Design";
    Vortrag: International Workshop on Computational Electronics (IWCE), Leeds, UK (eingeladen); 11.08.1993 - 13.08.1993; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), S. 37 - 44.

  1385. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The Concept of BAMBI";
    Vortrag: Symposium on BAMBI, Västeras (eingeladen); 03.09.1987 - 04.09.1987; in: "Abstracts of the 2nd Symposium on BAMBI", (1987).

  1386. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The MINIMOS Simulator and TUV Perspective on TCAD";
    Vortrag: Computer-Aided Design of IC Processes and Devices, Stanford (eingeladen); 07.08.1996 - 08.08.1996; in: "Symposium on Computer-Aided Design of IC Processes and Devices", (1996), S. 1 - 14.

  1387. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The State of the Art in Device Simulation";
    Vortrag: Congresso da Sociedade Brasileira de Microeletronica, Porto Alegre (eingeladen); 12.07.1989 - 14.07.1989; in: "Proceedings IV Congresso da SBMICRO", Vol.1 (1989), S. 151 - 166.

  1388. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The State of the Art in Technology Computer-Aided Design";
    Vortrag: Primer Taller de Technicas de Simulacion en Semiconductores, Mexico City (eingeladen); 02.06.1997 - 03.06.1997; in: "Abstracts Primer Taller de Technicas de Simulacion en Semiconductores", (1997), S. 1.

  1389. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The State of the Art in Technology Computer-Aided Design";
    Vortrag: Ultra Low Voltage Low Power Research Symposium, Portland (eingeladen); 05.09.1997; in: "Abstracts Ultra Low Voltage Low Power Research Symposium", (1997), S. 1.

  1390. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The Status of MINIMOS";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea (eingeladen); 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 2 - 15.

  1391. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The Use and Construction of Numerical Simulation Packages Based on Physical Device Models for the Design and Analysis of Silicon VLSI";
    Vortrag: Short Course on Semiconductor Device Modelling, Leeds (eingeladen); 30.03.1987 - 03.04.1987; in: "Proceedings Short Course on Semiconductor Device Modelling", (1987), S. 187 - 198.

  1392. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Three Dimensional Device Modeling with MINIMOS 5";
    Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Osaka (eingeladen); 26.05.1989 - 27.05.1989; in: "Proceedings 1989 VLSI Process/Device Modeling Workshop", (1989), S. 40 - 41.

  1393. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices";
    Vortrag: Workshop on Semiconductors and Micro- & Nano-Technology (SEMINATEC), Campinas (eingeladen); 09.02.2006 - 10.02.2006; in: "Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology", (2006), S. 12 - 15.

  1394. Autor/innen: Siegfried Selberherr, E360; W. Fichtner; Hans Pötzl, E366

    S. Selberherr, W. Fichtner, H. Pötzl:
    "MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in: "Abstr.Conf.on Numerical Analysis of Semiconductor Devices", (1979), S. 29.

  1395. Autor/innen: Siegfried Selberherr, E360; W. Fichtner; Hans Pötzl, E366

    S. Selberherr, W. Fichtner, H. Pötzl:
    "MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in: "Proceedings Conf.on Numerical Analysis of Semiconductor Devices", (1979), ISBN: 0-906783-00-3; S. 275 - 279.

  1396. Autor/innen: Siegfried Selberherr, E360; Lado Filipovic, E360

    S. Selberherr, L. Filipovic:
    "CMOS Compatible Gas Sensors";
    Vortrag: International Conference on Materials Science and Engineering, San Francisco, CA, USA (eingeladen); 18.02.2019 - 20.02.2019; in: "Book of Abstracts of the International Conference on Materials Science and Engineering", (2019), 1 S.

  1397. Autor/innen: Siegfried Selberherr, E360; Claus Fischer, E360; Stefan Halama, E360; Christoph Pichler, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360

    S. Selberherr, C. Fischer, S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger:
    "The IC Processes of the Future: Advances in Device Structures and Device Simulation Techniques";
    Vortrag: Eschola da Sociedade Brasileira de Microeletronica (EBMICRO), Recife (eingeladen); 15.01.1995 - 20.01.1995; in: "Proceedings IV EBMICRO", Vol. 1 (1995), S. 87 - 114.

  1398. Autor/innen: Siegfried Selberherr, E360; Claus Fischer, E360; Stefan Halama, E360; Hubert Pimingstorfer; Howard Read, E360; Hannes Stippel, E360; Peter Verhas, E360; Karl Wimmer, E360

    S. Selberherr, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, H. Stippel, P. Verhas, K. Wimmer:
    "The Viennese TCAD System";
    Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Oiso (eingeladen); 26.05.1991 - 27.05.1991; in: "Proceedings VPAD Workshop", (1991), S. 32 - 35.

  1399. Autor/innen: Siegfried Selberherr, E360; W. Griebel; Hans Pötzl, E366

    S. Selberherr, W. Griebel, H. Pötzl:
    "Transport Physics for Modeling Semiconductor Devices";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea (eingeladen); 09.07.1984 - 12.07.1984; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7; S. 133 - 152.

  1400. Autor/innen: Siegfried Selberherr, E360; Otto Heinreichsberger, E360; Martin Stiftinger, E360; K. Traar

    S. Selberherr, O. Heinreichsberger, M. Stiftinger, K. Traar:
    "About the Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers";
    Vortrag: Symposium on Supercomputer Simulation of Semiconductor Devices, Minneapolis (eingeladen); 19.11.1990 - 20.11.1990; in: "Manuscripts Symposium on Supercomputer Simulation of Semiconductor Devices", (1990), ISSN: 0010-4655; S. 145 - 156.

  1401. Autor/innen: Siegfried Selberherr, E360; Werner Jüngling, E360

    S. Selberherr, W. Jüngling:
    "Device Simulation - Present Situation and Future Trends";
    Vortrag: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg (eingeladen); 05.05.1986 - 07.05.1986; in: "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), S. 7.

  1402. Autor/innen: Siegfried Selberherr, E360; Hans Kosina, E360

    S. Selberherr, H. Kosina:
    "Simulation of Nanometer MOS-Devices with MINIMOS";
    Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Kawasaki (eingeladen); 20.08.1990 - 21.08.1990; in: "Proceedings 1990 VLSI Process/Device Modeling Workshop", (1990), S. 2 - 5.

  1403. Autor/innen: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Low Temperature MOS Device Modeling";
    Vortrag: Workshop on Low Temperature Semiconductor Electronics, Burlington; 07.08.1989 - 08.08.1989; in: "Proceedings Workshop On Low Temperature Semiconductor Electronics", (1989), S. 68 - 72.

  1404. Autor/innen: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Numerical Simulation of Semiconductor Devices";
    Vortrag: European Simulation Multiconference (ESM), Rom (eingeladen); 07.06.1989 - 09.06.1989; in: "Proceedings European Simulation Multiconference ESM '89", (1989), S. 291 - 296.

  1405. Autor/innen: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Three Dimensional Process and Device Modeling";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis (eingeladen); 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 383 - 407.

  1406. Autor/innen: Siegfried Selberherr, E360; Hans Pötzl, E366

    S. Selberherr, H. Pötzl:
    "Numerische Simulation von Halbleiterbauelementen";
    Vortrag: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in: "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3; S. 154 - 158.

    Zusätzliche Informationen

  1407. Autor/innen: Siegfried Selberherr, E360; Hans Pötzl, E366

    S. Selberherr, H. Pötzl:
    "Two Dimensional MOS-Transistor Modelling";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 10.09.1979 - 14.09.1979; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1979), S. 133.

  1408. Autor/innen: Siegfried Selberherr, E360; Hans Pötzl, E366

    S. Selberherr, H. Pötzl:
    "Zweidimensionale Modellierung von MOS-Transistoren";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 10.10.1979 - 13.10.1979; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1979), S. 52 - 57.

  1409. Autor/innen: Siegfried Selberherr, E360; Ch. Ringhofer

    S. Selberherr, Ch. Ringhofer:
    "Discretization Methods for the Semiconductor Equations";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway (eingeladen); 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 31 - 45.

  1410. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Design of Integrated Circuits: Device Modeling";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Banja Luka (eingeladen); 14.04.1982 - 16.04.1982; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1982), S. 47 - 84.

  1411. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren";
    Vortrag: Fortbildungsseminar Praxis der Großintegration, Dortmund (eingeladen); 27.05.1980 - 31.05.1980; in: "Kursunterlagen Praxis der Großintegration", VA8 (1980), S. 1 - 44.

  1412. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "The Sensitivity of Short Channel MOSFETs on Technological Tolerances";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), S. 116 - 118.

  1413. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Two Dimensional MOS-Transistor Modeling";
    Vortrag: NATO-ASI-Workshop: Process and Device Simulation for MOS -VLSI Circuits, Urbino (eingeladen); 12.07.1982 - 23.07.1982; in: "Proceedings of Process and Device Simulation for MOS-VLSI Circuits", (1982), S. 1 - 93.

  1414. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Two Dimensional MOS-Transistor Modeling";
    Vortrag: International Conference on Computer-Aided Design of IC Fabrication Processes, Stanford (eingeladen); 18.08.1982 - 19.08.1982; in: "Proceedings of Computer-Aided Design of IC Fabrication Processes Conference", (1982), S. 1 - 20.

  1415. Autor/innen: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Two Dimensional MOS-Transistor Modeling";
    Vortrag: VLSI Process and Device Modeling Summer Course, Heverlee (eingeladen); 07.06.1983 - 10.06.1983; in: "Proceedings of VLSI Process and Device Modeling Summer Course 1983", (1983), S. 1 - 38.

  1416. Autor/innen: Siegfried Selberherr, E360; Viktor Sverdlov, E360

    S. Selberherr, V. Sverdlov:
    "About Electron Transport and Spin Control in Semiconductor Devices";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain (eingeladen); 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 1 - 4.

  1417. Autor/innen: Siegfried Selberherr, E360; Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360

    S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
    "Exploiting Spin-Transfer Torque for Non-Volatile Computing";
    Vortrag: World Congress of Smart Materials (WCSM), Bangkok (eingeladen); 16.03.2017 - 18.03.2017; in: "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), S. 130.

  1418. Autor/innen: Andreas Selinger; Denis Ojdanic; Karl Rupp, E360; Erasmus Langer, E360

    A. Selinger, D. Ojdanic, K. Rupp, E. Langer:
    "Eigenvalue Computations on Graphics Processing Units";
    Vortrag: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in: "Proceedings of the 2015 Vienna Young Scientist Symposium", Book-of-Abstracts.com, Heinz A. Krebs, Gumpoldskirchen, Austria (2015), ISBN: 978-3-9504017-0-7; S. 40 - 41.

  1419. Autor/innen: Andreas Selinger; Karl Rupp; Siegfried Selberherr, E360

    A. Selinger, K. Rupp, S. Selberherr:
    "Evaluation of Mobile ARM-Based SoCs for High Performance Computing";
    Vortrag: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in: "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1; S. 21:1 - 21:7.

    Zusätzliche Informationen

  1420. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "The Multi-Dimensional Transient Challenge: The Wigner Particle Approach";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France (eingeladen); 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 119 - 120.

  1421. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "The Role of Annihilation in a Wigner Monte Carlo Approach";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), S. 78.

  1422. Autor/innen: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "Two-dimensional Transient Wigner Particle Model";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 404 - 407.

    Zusätzliche Informationen

  1423. Autor/innen: Alexander Semenov; A. I. Dedyk; P. Y. Belavsky; Yu. V. Pavlova; Sergey Karmanenko; Oleg Pakhomov; Alexander Starkov; Ivan Starkov, E360

    A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov:
    "A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions";
    Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 77.

  1424. Autor/innen: I.J. Serrano-Lopez; Abel Garcia-Barrientos; Vassil Palankovski, E360; L. del Carmen Cruz-Netro

    I. Serrano-Lopez, A. Garcia-Barrientos, V. Palankovski, L. del Carmen Cruz-Netro:
    "Non-Stationary Effects of Space Charge in InN Films";
    Vortrag: International Materials Research Congress, Cancun, Mexico; 12.08.2012 - 17.08.2012; in: "XXI International Materials Research Congress", (2012), 1 S.

  1425. Autor/innen: Ambika Shah, E360; Michael Waltl, E360

    A. Shah, M. Waltl:
    "Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits";
    Vortrag: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 27.11.2019 - 29.11.2019; in: "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), S. 197 - 200.

    Zusätzliche Informationen

  1426. Autor/innen: Prateek Sharma, E360; Markus Jech, E360; S. E. Tyaginov, E360; Florian Rudolf, E360; Karl Rupp, E360; H. Enichlmair; J.M. Park; Tibor Grasser, E360

    P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser:
    "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 60 - 63.

    Zusätzliche Informationen

  1427. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Stewart E. Rauch; J. Franco; Ben Kaczer; Alexander Makarov, E360; M.I. Vexler; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, T. Grasser:
    "A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 15.09.2016; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; S. 428 - 431.

    Zusätzliche Informationen

  1428. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), S. 21 - 24.

    Zusätzliche Informationen

  1429. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; Karl Rupp, E360; Markus Bina, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
    Vortrag: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 10.05.2015 - 14.05.2015; in: "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4; S. 389 - 392.

    Zusätzliche Informationen

  1430. Autor/innen: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; Karl Rupp, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), S. 60.

  1431. Autor/innen: Alireza Sheikholeslami, E360; Elaf Al-Ani, E360; Rene Heinzl, E360; Clemens Heitzinger, E360; Farnaz Parhami; Fuad Badrieh; Helmut Puchner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
    "Level Set Method Based General Topography Simulator and its Application in Interconnect Processes";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707; S. 139 - 142.

  1432. Autor/innen: Alireza Sheikholeslami, E360; Rene Heinzl, E360; Stefan Holzer, E360; Clemens Heitzinger, E360; Michael Spevak, E360; M. Leicht; O. Häberlen; J. Fugger; Fuad Badrieh; Farnaz Parhami; H Puchner; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr:
    "Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes";
    Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 S.

  1433. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Elaf Al-Ani, E360; Rene Heinzl, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, E. Al-Ani, R. Heinzl, T. Grasser, S. Selberherr:
    "Three-Dimensional Surface Evolution Using a Level Set Method";
    Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 01.12.2004; in: "Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS)", (2004).

  1434. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Fuad Badrieh; Helmut Puchner, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, F. Badrieh, H. Puchner, S. Selberherr:
    "Three-Dimensional Topography Simulation Based on a Level Set Method";
    Vortrag: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 2 (2004), ISBN: 0-7803-8422-9; S. 263 - 265.

    Zusätzliche Informationen

  1435. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
    "Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
    Vortrag: International Conference on Microelectronics (MIEL), Nis; 16.05.2004 - 19.05.2004; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; S. 241 - 244.

    Zusätzliche Informationen

  1436. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, S. Selberherr:
    "A Method for Generating Structurally Aligned Grids Using a Level Set Approach";
    Vortrag: European Simulation Multiconference (ESM), Nottingham; 09.06.2003 - 11.06.2003; in: "Proc. 17th European Simulation Multiconference: Modelling and Simulation", (2003), ISBN: 3-936150-25-7; S. 496 - 501.

  1437. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360; Fuad Badrieh; Helmut Puchner, E360

    A. Sheikholeslami, C. Heitzinger, S. Selberherr, F. Badrieh, H. Puchner:
    "Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation";
    Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 481 - 486.

  1438. Autor/innen: Alireza Sheikholeslami, E360; Stefan Holzer, E360; Clemens Heitzinger, E360; M. Leicht; O. Häberlen; J. Fugger; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr:
    "Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process";
    Vortrag: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in: "2005 PhD Research in Microelectronics and Electronics", Vol. 2 (2005), ISBN: 0-7803-9345-7; S. 279 - 282.

  1439. Autor/innen: Alireza Sheikholeslami, E360; Farnaz Parhami; Rene Heinzl, E360; Elaf Al-Ani, E360; Clemens Heitzinger, E360; Fuad Badrieh; Helmut Puchner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
    "Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 187 - 190.

    Zusätzliche Informationen

  1440. Autor/innen: Alireza Sheikholeslami, E360; Farnaz Parhami; H Puchner; Siegfried Selberherr, E360

    A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
    "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
    Vortrag: International Conference on Nanoscience and Technology (ICNT), Basel; 30.07.2006 - 04.08.2006; in: "International Conference on Nanoscience and Technology (ICNT 2006)", (2006), ISBN: 3-905084-71-6; S. 163 - 164.

  1441. Autor/innen: Alireza Sheikholeslami, E360; Siegfried Selberherr, E360; Farnaz Parhami; H Puchner

    A. Sheikholeslami, S. Selberherr, F. Parhami, H. Puchner:
    "Planarization of Passivation Layers during Manufacturing Processes of Image Sensors";
    Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in: "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x; S. 35 - 36.

  1442. Autor/innen: Thomas Simlinger, E360; R. Deutschmann; Claus Fischer, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, S. Selberherr:
    "Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 589 - 591.

  1443. Autor/innen: Thomas Simlinger, E360; Claus Fischer, E360; R. Deutschmann; Siegfried Selberherr, E360

    T. Simlinger, C. Fischer, R. Deutschmann, S. Selberherr:
    "MINIMOS NT - a Hydrodynamic Simulator for High Electron Mobility Transistors";
    Vortrag: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in: "Proceedings 8th GaAs Simulation Workshop", (1994).

  1444. Autor/innen: Thomas Simlinger, E360; Hans Kosina, E360; Martin Rottinger, E360; Siegfried Selberherr, E360

    T. Simlinger, H. Kosina, M. Rottinger, S. Selberherr:
    "MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x; S. 83 - 86.

  1445. Autor/innen: Thomas Simlinger, E360; Christoph Pichler, E360; Richard Plasun, E360; Siegfried Selberherr, E360

    T. Simlinger, C. Pichler, R. Plasun, S. Selberherr:
    "Technology CAD for Smart Power Devices";
    Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 07.10.1997 - 11.10.1997; in: "Proceedings CAS 97 Conf.", (1997), ISBN: 0-7803-3804-9; S. 383 - 393.

  1446. Autor/innen: Thomas Simlinger, E360; Martin Rottinger, E360; Siegfried Selberherr, E360

    T. Simlinger, M. Rottinger, S. Selberherr:
    "A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 173 - 176.

    Zusätzliche Informationen

  1447. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
    "Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide";
    Vortrag: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 20.06.2018 - 22.06.2018; in: "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), S. 42 - 44.

  1448. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
    Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 17.09.2017 - 22.09.2017; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017).

  1449. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 125 - 128.

    Zusätzliche Informationen

  1450. Autor/innen: Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 233 - 236.

    Zusätzliche Informationen

  1451. Autor/innen: Vito Simonka, E360; Georg Nawratil, E104-03; Andreas Hössinger, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
    "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 128 - 129.

  1452. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Lado Filipovic, E360; Erasmus Langer, E360

    A. P. Singulani, H. Ceric, L. Filipovic, E. Langer:
    "Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology";
    Vortrag: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 14.04.2013 - 17.04.2013; in: "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8; 6 S.

    Zusätzliche Informationen

  1453. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Erasmus Langer, E360

    A. P. Singulani, H. Ceric, E. Langer:
    "Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 216 - 220.

    Zusätzliche Informationen

  1454. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Erasmus Langer, E360

    A. P. Singulani, H. Ceric, E. Langer:
    "Stress reduction induced by Bosch scallops on an open TSV technology";
    Poster: IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan; 13.06.2013 - 15.06.2013; in: "Proceedings of the International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9; S. 1 - 2.

    Zusätzliche Informationen

  1455. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Erasmus Langer, E360; Sara Carniello

    A. P. Singulani, H. Ceric, E. Langer, S. Carniello:
    "Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology";
    Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), ISBN: 978-1-4799-0112-8; S. CP.2.1 - CP.2.5.

    Zusätzliche Informationen

  1456. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    A. P. Singulani, H. Ceric, S. Selberherr:
    "Stress Estimation in Open Tungsten TSV";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 65 - 68.

    Zusätzliche Informationen

  1457. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    A. P. Singulani, H. Ceric, S. Selberherr:
    "Thermo-mechanical Simulations of an Open Tungsten TSV";
    Vortrag: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 05.12.2012 - 07.12.2012; in: "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4; S. 110 - 114.

    Zusätzliche Informationen

  1458. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 40 - 41.

  1459. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, S. Selberherr:
    "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 29 - 32.

    Zusätzliche Informationen

  1460. Autor/innen: Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, S. Selberherr:
    "Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 55 - 58.

    Zusätzliche Informationen

  1461. Autor/innen: R. Sonderfeld; Rene Heinzl, E360

    R. Sonderfeld, R. Heinzl:
    "A Generic and Self-Optimizing Polynomial Library";
    Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5.

  1462. Autor/innen: R. G. Southwick III; B. Knowlton; Ben Kaczer; Tibor Grasser, E360

    R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser:
    "On the Thermal Activation of Negative Bias Temperature Instability";
    Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 36 - 41.

  1463. Autor/innen: R. G. Southwick III; Shem T. Purnell; Blake A. Rapp; Ryan J. Thompson; Shane K Pugmire; Ben Kaczer; Tibor Grasser, E360; B. Knowlton

    R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton:
    "Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices";
    Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 12 - 16.

  1464. Autor/innen: Gerhard Span; Martin Wagner, E360; Tibor Grasser, E360

    G. Span, M. Wagner, T. Grasser:
    "Thermoelectric Power Generation Using Large Area pn-Junctions";
    Vortrag: European Conference on Thermoelectrics (ECT), Nancy; 01.09.2005 - 02.09.2005; in: "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), S. 72 - 75.

  1465. Autor/innen: Gerhard Span; Martin Wagner, E360; Stefan Holzer, E360; Tibor Grasser, E360

    G. Span, M. Wagner, S. Holzer, T. Grasser:
    "Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions";
    Vortrag: International Conference on Thermoelectrics, Vienna; 06.08.2006 - 10.08.2006; in: "International Conference on Thermoelectrics", 6 (2006), ISBN: 1-4244-0811-3; S. 23 - 28.

  1466. Autor/innen: Michael Spevak, E360; Tibor Grasser, E360

    M. Spevak, T. Grasser:
    "Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
    Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 474 - 478.

  1467. Autor/innen: Michael Spevak, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
    "A Computational Framework for Topological Operations";
    Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 57.

  1468. Autor/innen: Michael Spevak, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
    "Automatic Linearization using Functional Programming for Scientific Computing";
    Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 147.

  1469. Autor/innen: Michael Spevak, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
    "Process and Device Simulation With a Generic Scientific Simulation Environment";
    Vortrag: International Conference on Microelectronics (MIEL), Beograd; 14.04.2006 - 17.04.2006; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; S. 475 - 478.

    Zusätzliche Informationen

  1470. Autor/innen: Michael Spevak, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Tibor Grasser, E360

    M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
    "Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization";
    Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 5-1 - 5-8.

  1471. Autor/innen: Michael Spevak, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
    "A Generic Discretization Library";
    Vortrag: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in: "OOPSLA Proceedings", (2006), ISSN: 1652-926x; S. 95 - 100.

  1472. Autor/innen: Andreas Stach, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    A. Stach, R. Sabelka, S. Selberherr:
    "Three-Dimensional Layout-Based Thermal and Capacitive Simulation of Interconnect Structures";
    Vortrag: International Conference on Modelling, Identification and Control, Innsbruck; 17.02.1997 - 19.02.1997; in: "Proceedings IASTED Intl. Conf. on Modelling, Identification and Control", (1997), ISBN: 0-88986-217-6; S. 16 - 19.

  1473. Autor/innen: Bernhard Stampfer, E360; Marko Simicic; P. Weckx; Arash Abbasi, E360; Ben Kaczer; Tibor Grasser, E360; Michael Waltl, E360

    B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
    "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 5.

    Zusätzliche Informationen

  1474. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Lidija Filipovic, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina:
    "Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2.

  1475. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Markus Karner, E360; Lidija Filipovic, E360; Christian Kernstock, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
    "Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels";
    Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 1.

  1476. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Markus Karner, E360; Lidija Filipovic, E360; Christian Kernstock, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
    "Full-Band Modeling of Mobility in p-Type FinFETs";
    Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in: "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0; S. 83 - 84.

  1477. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Markus Karner, E360; Lidija Filipovic, E360; Christian Kernstock, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
    "On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 181 - 184.

    Zusätzliche Informationen

  1478. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, H. Kosina:
    "A stable discretization method for "Dirac-like" effective Hamiltonians";
    Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 02.09.2012 - 06.09.2012; in: "Proc. International Quantum Cascade Lasers School & Workshop", (2012), S. 127.

  1479. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Klaus Schnass; Markus Karner, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, K. Schnass, M. Karner, H. Kosina:
    "VSP - a Quantum Simulator for Engineering Applications";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 132 - 133.

  1480. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
    "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding";
    Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 5 - 8.

    Zusätzliche Informationen

  1481. Autor/innen: Zlatan Stanojevic; Oskar Baumgartner, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
    "Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model";
    Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 18.03.2010 - 19.03.2010; in: "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), S. 69 - 72.

  1482. Autor/innen: Zlatan Stanojevic; Lidija Filipovic, E360; Oskar Baumgartner, E360; Markus Karner, E360; Christian Kernstock, E360; Hans Kosina, E360

    Z. Stanojevic, L. Filipovic, O. Baumgartner, M. Karner, C. Kernstock, H. Kosina:
    "Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 S.

  1483. Autor/innen: Zlatan Stanojevic; Lidija Filipovic, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    Z. Stanojevic, L. Filipovic, O. Baumgartner, H. Kosina:
    "Fast Methods for Full-Band Mobility Calculation";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 51 - 52.

  1484. Autor/innen: Zlatan Stanojevic; M Karner; Hans Kosina, E360

    Z. Stanojevic, M. Karner, H. Kosina:
    "Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 332 - 335.

    Zusätzliche Informationen

  1485. Autor/innen: Zlatan Stanojevic; M Karner; Klaus Schnass; Christian Kernstock; Oskar Baumgartner, E360; Hans Kosina, E360

    Z. Stanojevic, M. Karner, K. Schnass, Ch. Kernstock, O. Baumgartner, H. Kosina:
    "A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 143 - 146.

    Zusätzliche Informationen

  1486. Autor/innen: Zlatan Stanojevic; Hans Kosina, E360

    Z. Stanojevic, H. Kosina:
    "Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures";
    Vortrag: Silicon Nanoelectronics Workshop, Kyoto, Japan; 09.06.2013 - 10.06.2013; in: "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), S. 93 - 94.

  1487. Autor/innen: Zlatan Stanojevic; Hans Kosina, E360

    Z. Stanojevic, H. Kosina:
    "Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 352 - 355.

    Zusätzliche Informationen

  1488. Autor/innen: Zlatan Stanojevic; Viktor Sverdlov, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
    "Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), S. 99 - 100.

  1489. Autor/innen: Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement";
    Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 01.05.2011 - 06.05.2011; in: "219th ECS Meeting", Vol.35, No.5 (2011), ISBN: 978-1-56677-866-4; S. 117 - 122.

    Zusätzliche Informationen

  1490. Autor/innen: Alexander Starkov; I. Baranov; Oleg Pakhomov; Ivan Starkov, E360; A. Zaitsev

    A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev:
    "Principles of Solid-State Cooler on Layered Multiferroics";
    Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 17.09.2012 - 20.09.2012; in: "Conference guide & book of abstracts", (2012), 1 S.

  1491. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
    Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in: "Abstract Book", (2012), S. 238.

  1492. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials";
    Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 76.

  1493. Autor/innen: Alexander Starkov; Ivan Starkov, E360

    A. Starkov, I. Starkov:
    "Domain-Wall Motion for Slowly Varying Electric Field";
    Vortrag: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in: "Abstract Book", (2012), S. 93.

  1494. Autor/innen: Alexander Starkov; Ivan Starkov, E360

    A. Starkov, I. Starkov:
    "Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall";
    Vortrag: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 S.

    Zusätzliche Informationen

  1495. Autor/innen: Ivan Starkov, E360; Hajdin Ceric, E360

    I. Starkov, H. Ceric:
    "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress";
    Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), S. 90 - 91.

  1496. Autor/innen: Ivan Starkov, E360; Hajdin Ceric, E360; S. E. Tyaginov, E360; Tibor Grasser, E360

    I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
    "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
    Vortrag: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 03.07.2011 - 07.07.2011; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 S.

    Zusätzliche Informationen

  1497. Autor/innen: Ivan Starkov, E360; Hajdin Ceric, E360; S. E. Tyaginov, E360; Tibor Grasser, E360; H. Enichlmair; J.M. Park; C. Jungemann

    I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
    "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 127 - 130.

    Zusätzliche Informationen

  1498. Autor/innen: Ivan Starkov, E360; H. Enichlmair; Tibor Grasser, E360

    I. Starkov, H. Enichlmair, T. Grasser:
    "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 40.

  1499. Autor/innen: Ivan Starkov, E360; H. Enichlmair; S. E. Tyaginov, E360; Tibor Grasser, E360

    I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
    "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
    Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  1500. Autor/innen: Ivan Starkov, E360; H. Enichlmair; S. E. Tyaginov, E360; Tibor Grasser, E360

    I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
    "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; S. 1 - 6.

    Zusätzliche Informationen

  1501. Autor/innen: Ivan Starkov, E360; A. S. Starkov; S. E. Tyaginov, E360; H. Enichlmair; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
    "An Analytical Model for MOSFET Local Oxide Capacitance";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S.

  1502. Autor/innen: Ivan Starkov, E360; S. E. Tyaginov, E360; H. Enichlmair; Jong Mun Park, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
    Vortrag: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 25.09.2011 - 30.09.2011; in: "GADEST 2011: Abstract Booklet", (2011), S. 105 - 106.

  1503. Autor/innen: Ivan Starkov, E360; S. E. Tyaginov, E360; H. Enichlmair; Oliver Triebl, E360; Johann Cervenka, E360; C. Jungemann; Sara Carniello; Jong Mun Park, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
    "HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
    Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 128.

  1504. Autor/innen: Ivan Starkov, E360; S. E. Tyaginov, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, T. Grasser:
    "Green´s Function Asymptotic in Two-Layered Periodic Medium";
    Vortrag: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), S. 111 - 112.

  1505. Autor/innen: Ivan Starkov, E360; S. E. Tyaginov, E360; Oliver Triebl, E360; Johann Cervenka, E360; C. Jungemann; Sara Carniello; Jong Mun Park, E360; H. Enichlmair; Markus Karner, E360; Christian Kernstock, E360; E. Seebacher; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
    "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 139 - 144.

  1506. Autor/innen: Margareta V. Stephanie, AIT Austrian Ins ...; Michael Waltl, E360; Tibor Grasser, E360; Bernhard SchrenkSchrenk, AIT Austrian Ins ...

    M. Stephanie, M. Waltl, T. Grasser, B. SchrenkSchrenk:
    "WDM-Conscious Synaptic Receptor Assisted by SOA+EAM";
    Vortrag: 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, USA; 05.03.2022 - 09.03.2022; in: "2022 Optical Fiber Communications Conference and Exhibition (OFC)", (2022).

    Zusätzliche Informationen

  1507. Autor/innen: Martin Stiftinger, E360; Otto Heinreichsberger, E360; Siegfried Selberherr, E360

    M. Stiftinger, O. Heinreichsberger, S. Selberherr:
    "A Collection of Iterative Algorithms for VLSI-Device Simulation";
    Vortrag: International Congress on Industrial and Applied Mathematics (ICIAM), Washington (eingeladen); 08.07.1991 - 12.07.1991; in: "Abstracts ICIAM 91 Conference", (1991), S. 205.

  1508. Autor/innen: Martin Stiftinger, E360; Otto Heinreichsberger, E360; Siegfried Selberherr, E360

    M. Stiftinger, O. Heinreichsberger, S. Selberherr:
    "A Comparison of Various Accelerators for the Iterative Solution of Large Nonsymmetric Systems";
    Vortrag: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in: "Abstracts Conference on Scientific Computation", (1990), S. 82 - 85.

  1509. Autor/innen: Martin Stiftinger, E360; Siegfried Selberherr, E360

    M. Stiftinger, S. Selberherr:
    "A Physically Based Analytical Model for Vertical DMOS Transistors";
    Vortrag: Internationales wissenschaftliches Kolloquium, Ilmenau; 21.09.1992 - 24.09.1992; in: "37. Internationales wissenschaftliches Kolloquium", 2 (1992), S. 11 - 16.

  1510. Autor/innen: Martin Stiftinger, E360; Siegfried Selberherr, E360

    M. Stiftinger, S. Selberherr:
    "An Analytical DC- and AC-Model for Vertical Smart Power DMOS Transistors";
    Vortrag: International Seminar on Power Semiconductors (ISPS), Prag; 09.09.1992 - 11.09.1992; in: "Proceedings ISPS 92", (1992), S. 89 - 93.

  1511. Autor/innen: Martin Stiftinger, E360; W. Soppa; Siegfried Selberherr, E360

    M. Stiftinger, W. Soppa, S. Selberherr:
    "A Physically Based DC- and AC-Model for Vertical Smart Power DMOS Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 617 - 620.

  1512. Autor/innen: Martin Stiftinger, E360; W. Soppa; Siegfried Selberherr, E360

    M. Stiftinger, W. Soppa, S. Selberherr:
    "A Scalable Physically Based Analytical DMOS Transistor Model";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 12.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 825 - 828.

  1513. Autor/innen: Franz Stimpfl, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
    "A Delaunay Mesh Generation Approach without the Use of Convex Hulls";
    Vortrag: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in: "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 S.

  1514. Autor/innen: Franz Stimpfl, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
    "A Multi-Mode Mesh Generation Approach for Scientific Computing";
    Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 506 - 513.

  1515. Autor/innen: Franz Stimpfl, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
    "A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 265 - 268.

    Zusätzliche Informationen

  1516. Autor/innen: Franz Stimpfl, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
    "High Performance Parallel Mesh Generation and Adaption";
    Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008).

  1517. Autor/innen: Franz Stimpfl, E360; Josef Weinbub, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360

    F. Stimpfl, J. Weinbub, R. Heinzl, P. Schwaha, S. Selberherr:
    "A Unified Topological Layer for Finite Element Space Discretization";
    Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1655 - 1658.

  1518. Autor/innen: Hannes Stippel, E360; Franz Fasching, E360; Claus Fischer, E360; Stefan Halama, E360; Hubert Pimingstorfer; Walter Tuppa, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    H. Stippel, F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, W. Tuppa, K. Wimmer, S. Selberherr:
    "Implementation of a TCAD Framework";
    Vortrag: European Simulation Multiconference (ESM), York; 01.06.1992 - 03.06.1992; in: "Proceedings European Simulation Multiconference", (1992), ISBN: 1-56555-013-7; S. 131 - 135.

  1519. Autor/innen: Hannes Stippel, E360; Stefan Halama, E360; Gerhard Hobler, E362; Karl Wimmer, E360; Siegfried Selberherr, E360

    H. Stippel, S. Halama, G. Hobler, K. Wimmer, S. Selberherr:
    "Adaptive Grid for Monte Carlo Simulation of Ion Implantation";
    Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 231 - 236.

  1520. Autor/innen: Hannes Stippel, E360; Gerhard Hobler, E362; Siegfried Selberherr, E360

    H. Stippel, G. Hobler, S. Selberherr:
    "Three-Dimensional Simulation of Ion Implantation";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 703 - 705.

  1521. Autor/innen: Hannes Stippel, E360; Siegfried Selberherr, E360

    H. Stippel, S. Selberherr:
    "Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location";
    Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 122 - 123.

  1522. Autor/innen: Michael Stockinger, E360; Siegfried Selberherr, E360

    M. Stockinger, S. Selberherr:
    "Automatic Device Design Optimization with TCAD Frameworks";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego (eingeladen); 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 1 - 6.

  1523. Autor/innen: Michael Stockinger, E360; Siegfried Selberherr, E360

    M. Stockinger, S. Selberherr:
    "Closed-Loop CMOS Gate Delay Time Optimization";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 13.09.1999 - 15.09.1999; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1999), ISBN: 2-86332-245-1; S. 504 - 507.

  1524. Autor/innen: Michael Stockinger, E360; Rudolf Strasser, E360; Richard Plasun, E360; Andreas Wild; Siegfried Selberherr, E360

    M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr:
    "A Qualitative Study on Optimized MOSFET Doping Profiles";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 77 - 80.

    Zusätzliche Informationen

  1525. Autor/innen: Michael Stockinger, E360; Rudolf Strasser, E360; Richard Plasun, E360; Andreas Wild; Siegfried Selberherr, E360

    M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr:
    "Closed-Loop MOSFET Doping Profile Optimization for Portable Systems";
    Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 411 - 413.

  1526. Autor/innen: Roberta Stradiotto, KAI GmbH; G. Pobegen; C Ostermaier; Tibor Grasser, E360

    R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
    "On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; S. 218 - 225.

    Zusätzliche Informationen

  1527. Autor/innen: F. Straker; Siegfried Selberherr, E360

    F. Straker, S. Selberherr:
    "Capacitance Computation for VLSI Structures";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 09.07.1984 - 12.07.1984; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7; S. 39 - 55.

  1528. Autor/innen: F. Straker; Siegfried Selberherr, E360

    F. Straker, S. Selberherr:
    "Capacitance Computation for VLSI Structures";
    Vortrag: International Conference on Trends in Communications (EUROCON), Paris; 21.04.1986 - 23.04.1986; in: "Proceedings of the International Conference on Trends in Communications", (1986), S. 602 - 608.

  1529. Autor/innen: F. Straker; Siegfried Selberherr, E360

    F. Straker, S. Selberherr:
    "Computation of Integrated Circuit Interconnect Capacitances";
    Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Zagreb; 26.04.1983 - 28.04.1983; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1983), S. 31 - 39.

  1530. Autor/innen: F. Straker; Siegfried Selberherr, E360

    F. Straker, S. Selberherr:
    "Computation of VLSI Metalization Capacitance";
    Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 13 - 15.

  1531. Autor/innen: F. Straker; Siegfried Selberherr, E360

    F. Straker, S. Selberherr:
    "Computation of VLSI Metalization Capacitance";
    Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 1 - 18.

  1532. Autor/innen: F. Straker; Siegfried Selberherr, E360

    F. Straker, S. Selberherr:
    "Computation of Wire and Junction Capacitances in VLSI Structures";
    Vortrag: International Conference on VLSI Multilevel Interconnection, New Orleans; 21.06.1984 - 22.06.1984; in: "Proceedings of VLSI Multilevel Interconnection Conference", IEEE Cat.No 84CH1999-2 (1984), S. 209 - 217.

  1533. Autor/innen: S. Straker; Siegfried Selberherr, E360

    S. Straker, S. Selberherr:
    "Kapazitätsberechnung bei VLSI-Strukturen";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in: "Bericht der Informationstagung Mikroelektronik", (1983), S. 77 - 83.

  1534. Autor/innen: Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Strasser, S. Selberherr:
    "A General Simulation Method for Etching and Deposition Processes";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 357 - 360.

    Zusätzliche Informationen

  1535. Autor/innen: Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Strasser, S. Selberherr:
    "Analysis of the Fabrication Process of Multilayer Vertical Stacked Capacitors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 587 - 590.

  1536. Autor/innen: Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Strasser, S. Selberherr:
    "Three-Dimensional Models and Algorithms for Wafer Topography Evaluation";
    Vortrag: Microelectronics Conference, Zvenigorod (eingeladen); 28.11.1994 - 03.12.1994; in: "Proceedings Microelectronics '94", (1994), S. 23 - 24.

  1537. Autor/innen: Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Strasser, S. Selberherr:
    "Three-Dimensional Simulation of Step Coverage for Contact Hole Metallization";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 339 - 342.

  1538. Autor/innen: Ernst Strasser, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    E. Strasser, K. Wimmer, S. Selberherr:
    "A New Method for Simulation of Etching and Deposition Processes";
    Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 54 - 55.

  1539. Autor/innen: Rudolf Strasser, E360; Christoph Pichler, E360; Siegfried Selberherr, E360

    R. Strasser, C. Pichler, S. Selberherr:
    "VISTA - A Framework for Technology CAD Purposes";
    Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 450 - 454.

  1540. Autor/innen: Rudolf Strasser, E360; Richard Plasun, E360; Siegfried Selberherr, E360

    R. Strasser, R. Plasun, S. Selberherr:
    "Parallel and Distributed Optimization in Technology Computer Aided Design";
    Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; S. 78 - 80.

  1541. Autor/innen: Rudolf Strasser, E360; Richard Plasun, E360; Siegfried Selberherr, E360

    R. Strasser, R. Plasun, S. Selberherr:
    "Practical Inverse Modeling with SIESTA";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 91 - 94.

    Zusätzliche Informationen

  1542. Autor/innen: Rudolf Strasser, E360; Richard Plasun, E360; Michael Stockinger, E360; Siegfried Selberherr, E360

    R. Strasser, R. Plasun, M. Stockinger, S. Selberherr:
    "Inverse Modeling of Semiconductor Devices";
    Vortrag: Conference on Optimization, Atlanta; 10.05.1999 - 12.05.1999; in: "Abstracts SIAM Conf. on Optimization", (1999), S. 77.

  1543. Autor/innen: Rudolf Strasser, E360; Siegfried Selberherr, E360

    R. Strasser, S. Selberherr:
    "Parallel and Distributed TCAD Simulations Using Dynamic Load Balancing";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 89 - 92.

    Zusätzliche Informationen

  1544. Autor/innen: V Suvorov; Andreas Hössinger, E360; Zoran Djuric

    V. Suvorov, A. Hössinger, Z. Djuric:
    "A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation";
    Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 3 - 4.

  1545. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures";
    Vortrag: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 23.09.2007 - 28.09.2007; in: "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), S. 63 - 64.

  1546. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Modeling Spin Transfer Torque Magnetoresistive Memory";
    Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 20.10.2020; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), S. 1.

  1547. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Modeling Ultra-Scaled Magnetoresistive Memory Cells";
    Hauptvortrag: 3rd Global Webinar on Nanoscience & Nanotechnology, online (eingeladen); 18.07.2022; in: "3rd Global Webinar on Nanoscience & Nanotechnology", (2022).

  1548. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays";
    Vortrag: International Conference on Unsolved Problems of Noise (UPON), Gallipoli (eingeladen); 06.06.2005 - 10.06.2005; in: "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), S. 177 - 182.

  1549. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Spin-based Electronics: Recent Developments and Trends";
    Vortrag: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia (eingeladen); 26.08.2019 - 29.08.2019; in: "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), S. 7.

  1550. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Franz Schanovsky, E360; D. Esseni

    V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
    "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
    Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 49 - 52.

    Zusätzliche Informationen

  1551. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, S. Selberherr:
    "Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films";
    Vortrag: APS March Meeting, Portland; 15.03.2010 - 19.03.2010; in: "Bulletin American Physical Society (APS March Meeting 2010)", 49/2 (2010), S. B9.00001.

  1552. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, S. Selberherr:
    "Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), College Park; 09.12.2009 - 11.12.2009; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1; S. TP6-03.1 - 2.

  1553. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; S. E. Tyaginov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr:
    "Subband Structure in Ultra-Thin Silicon Films";
    Vortrag: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), S. 62 - 63.

  1554. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; F. Schanovski; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr:
    "Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07.07.2009 - 11.07.2009; in: "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), S. 301.

  1555. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Franz Schanovsky, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 389 - 396.

  1556. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Franz Schanovsky, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance";
    Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco (eingeladen); 24.05.2009 - 29.05.2009; in: "215th ECS Meeting", 19/4 (2009), ISBN: 978-1-56677-712-4; S. 15 - 26.

  1557. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Franz Schanovsky, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
    "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 51 - 54.

    Zusätzliche Informationen

  1558. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Modeling Techniques for Strained CMOS Technology";
    Vortrag: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna (eingeladen); 04.10.2009 - 09.10.2009; in: "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5; S. 3 - 18.

  1559. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films";
    Vortrag: 2009 Silicon Nanoelectronics Workshop, Kyoto; 13.06.2009 - 14.06.2009; in: "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), S. 95 - 96.

  1560. Autor/innen: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 14.06.2009 - 19.06.2009; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), S. 58.

  1561. Autor/innen: Viktor Sverdlov, E360; Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, E360; Wilton Jaciel Loch, E360-01; Nils Petter Jørstad, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360

    V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
    "Emerging Devices for Digital Spintronics";
    Hauptvortrag: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online (eingeladen); 25.05.2022 - 26.05.2022; in: "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), S. 32 - 33.

  1562. Autor/innen: Viktor Sverdlov, E360; Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, E360; Wilton Jaciel Loch, E360-01; Nils Petter Jørstad, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360

    V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
    "Modeling Advanced Spintronic Based Magnetoresistive Memory";
    Vortrag: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia (eingeladen); 27.09.2022 - 29.09.2022; in: "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022).

  1563. Autor/innen: Viktor Sverdlov, E360; Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, E360; Wilton Jaciel Loch, E360-01; Nils Petter Jørstad, E360-01; Siegfried Selberherr, E360

    V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr:
    "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches";
    Hauptvortrag: 2 nd Global Webinar on Nanoscience & Nanotechnology, online (eingeladen); 14.03.2022 - 15.03.2022; in: "2nd Global Webinar on Nanoscience & Nanotechnology", (2022).

  1564. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon";
    Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 28.09.2020 - 02.10.2020; in: "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6; S. 200 - 201.

  1565. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 17.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021).

  1566. Autor/innen: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
    "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study";
    Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 25.06.2020 - 27.06.2020; in: "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), S. 58.

  1567. Autor/innen: Viktor Sverdlov, E360; Simone Fiorentini, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Roberto Orio, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr:
    "Emerging CMOS Compatible Magnetic Memories and Logic";
    Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (eingeladen); 25.02.2020 - 28.02.2020; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8.

    Zusätzliche Informationen

  1568. Autor/innen: Viktor Sverdlov, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
    "Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Cdrom Isbn: 0-7803-9204-3 (2005), ISBN: 0-7803-9203-5; S. 93 - 96.

  1569. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Dimitry Osintsev, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
    "Modeling of Spin-Based Silicon Technology";
    Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden (eingeladen); 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 1 - 4.

    Zusätzliche Informationen

  1570. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Dimitry Osintsev, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
    "Modeling Spin-Based Electronic Devices";
    Hauptvortrag: International Conference on Microelectronics (MIEL), Belgrade, Serbia (eingeladen); 12.05.2014 - 14.05.2014; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2014), ISBN: 978-1-4799-5295-3; S. 27 - 34.

    Zusätzliche Informationen

  1571. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "CMOS-Compatible Spintronic Devices";
    Vortrag: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil (eingeladen); 01.09.2015 - 04.09.2015; in: "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9; 4 S.

    Zusätzliche Informationen

  1572. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Nanoelectronics with Spin";
    Vortrag: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates (eingeladen); 04.04.2016 - 06.04.2016; in: "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), S. 19 - 20.

  1573. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Silicon and CMOS-Compatible Spintronics";
    Vortrag: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria (eingeladen); 15.03.2015 - 17.03.2015; in: "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", Recent advances in Computer Engineering, 28 (2015), ISBN: 978-1-61804-286-6; S. 17 - 20.

  1574. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Silicon Spintronics";
    Hauptvortrag: NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain (eingeladen); 13.04.2015 - 16.04.2015; in: "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9; S. 44 - 45.

  1575. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Silicon Spintronics: Recent Advances and Challenges";
    Hauptvortrag: International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia (eingeladen); 29.06.2015 - 30.06.2015; in: "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4; S. 6 - 7.

  1576. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
    "Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
    Vortrag: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China (eingeladen); 24.09.2015 - 26.09.2015; in: "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), S. 175.

  1577. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
    "Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
    Vortrag: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada (eingeladen); 20.05.2015 - 22.05.2015; in: "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", Google Books, (2015), ISBN: 978-1-927500-70-5; S. 58.

  1578. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
    "Modeling Silicon Spintronics";
    Vortrag: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia (eingeladen); 23.09.2014 - 25.09.2014; in: "Abstracts 2014", (2014), S. 78.

  1579. Autor/innen: Viktor Sverdlov, E360; Joydeep Ghosh; Siegfried Selberherr, E360

    V. Sverdlov, J. Ghosh, S. Selberherr:
    "Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 7.

  1580. Autor/innen: Viktor Sverdlov, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
    "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
    Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 29 - 30.

  1581. Autor/innen: Viktor Sverdlov, E360; Gerhard Karlowatz, E360; Siddhartha Dhar, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
    "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S.

  1582. Autor/innen: Viktor Sverdlov, E360; Gerhard Karlowatz, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr:
    "Two-Band k.p Model for the Conduction Band in Silicon";
    Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 220 - 224.

  1583. Autor/innen: Viktor Sverdlov, E360; Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina:
    "Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 329 - 332.

    Zusätzliche Informationen

  1584. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360

    V. Sverdlov, H. Kosina:
    "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
    Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 92 - 93.

  1585. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360

    V. Sverdlov, H. Kosina:
    "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 68 - 69.

  1586. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
    Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 01.10.2007 - 05.10.2007; in: "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", O1-14 (2007).

  1587. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model";
    Vortrag: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in: "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 S.

  1588. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Current Flow in Upcoming Microelectronic Devices";
    Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen (eingeladen); 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4; S. 3 - 8.

  1589. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Current Transport in Nanoelectronic Semiconductor Devices";
    Vortrag: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore (eingeladen); 10.01.2006 - 13.01.2006; in: "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9; S. 490 - 495.

  1590. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 23.01.2008 - 25.01.2008; in: "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), S. 41 - 42.

  1591. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling Current Transport in Ultra-Scaled Field Effect Transistors";
    Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 19.12.2005 - 21.12.2005; in: "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2; S. 385 - 390.

  1592. Autor/innen: Viktor Sverdlov, E360; Wilton Jaciel Loch, Christian Dopple ...; Mario Bendra, E360-01; Simone Fiorentini, E360; Johannes Ender, E360; Roberto Orio, E360; Tomás Hadámek, Christian Dopple ...; Nils Petter Jorstad, Christian Dopple ...; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360

    V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr:
    "Modeling Approach to Ultra-Scaled MRAM Cells";
    Vortrag: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen (eingeladen); 23.06.2022 - 25.06.2022; in: "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), S. 7 - 8.

    Zusätzliche Informationen

  1593. Autor/innen: Viktor Sverdlov, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Dimitry Osintsev, E360; Josef Weinbub, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
    "Modeling Spin-Based Devices in Silicon";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan (eingeladen); 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 70 - 71.

  1594. Autor/innen: Viktor Sverdlov, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
    "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
    Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland (eingeladen); 19.06.2014 - 21.06.2014; in: "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), S. 17.

  1595. Autor/innen: Viktor Sverdlov, E360; Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Alexander Makarov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr:
    "MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications";
    Vortrag: Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN), Milan, Italy (eingeladen); 14.08.2017 - 18.08.2017; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN)", (2017), S. 33 - 34.

  1596. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Fast Switching in MTJs with a Composite Free Layer";
    Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 291.

  1597. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching";
    Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 124 - 125.

  1598. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM";
    Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 08.11.2018 - 09.11.2018; in: "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), S. 32.

  1599. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field";
    Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2018 - 11.07.2018; in: "Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), ISBN: 978-1-941763-81-0; S. 30 - 32.

  1600. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
    Vortrag: Symposium on CMOS Emerging Technologies, Grenoble, France; 06.07.2014 - 08.07.2014; in: "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3; S. 19.

  1601. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 57 - 58.

  1602. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, S. Selberherr:
    "Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer";
    Vortrag: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 S.

  1603. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr:
    "Non-Volatility by Spin in Modern Nanoelectronics";
    Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 09.10.2017 - 11.10.2017; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2017), ISBN: 978-1-5386-2562-0; S. 7 - 14.

    Zusätzliche Informationen

  1604. Autor/innen: Viktor Sverdlov, E360; Alexander Makarov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
    "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 315 - 318.

    Zusätzliche Informationen

  1605. Autor/innen: Viktor Sverdlov, E360; Dimitry Osintsev, E360; Joydeep Ghosh, E360; Siegfried Selberherr, E360

    V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
    "Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), S. 63.

  1606. Autor/innen: Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    V. Sverdlov, D. Osintsev, S. Selberherr:
    "Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
    Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 454 - 456.

  1607. Autor/innen: Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    V. Sverdlov, D. Osintsev, S. Selberherr:
    "Spin Behaviour in Strained Silicon Films";
    Vortrag: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland (eingeladen); 15.09.2014 - 18.09.2014; in: "Abstracts of E-MRS Fall Meeting", (2014), 1 S.

  1608. Autor/innen: Viktor Sverdlov, E360; Heribert Seiler, E360; Al-Moatasem El-Sayed, E360; Yury Illarionov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina, S. Selberherr:
    "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T";
    Vortrag: International Conference on Physics and its Application, San Francisco, USA (eingeladen); 18.07.2022 - 21.07.2022; in: "International Conference on Physics and its Application 2022", (2022), S. 36 - 37.

  1609. Autor/innen: Viktor Sverdlov, E360; Heribert Seiler, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360

    V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
    "Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 52 - 53.

  1610. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 96.

  1611. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "A Single-Spin Switch";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 93 - 94.

  1612. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "A Single-Spin Switch";
    Vortrag: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan (eingeladen); 13.11.2018 - 15.11.2018; in: "Conference Abstract Book", (2018).

  1613. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Actual Problems in the Field of Spintronics";
    Vortrag: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany (eingeladen); 08.10.2018 - 10.10.2018; in: "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), S. 40.

  1614. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "CMOS Technology Compatible Magnetic Memories";
    Vortrag: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China (eingeladen); 09.10.2019 - 10.10.2019; in: "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019), ISBN: 978-1-7281-2062-1.

    Zusätzliche Informationen

  1615. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells";
    Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 13.03.2019 - 15.03.2019; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4; S. 151 - 153.

    Zusätzliche Informationen

  1616. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 107 - 108.

  1617. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures";
    Vortrag: APS March Meeting, Baltimore, USA; 14.03.2016 - 18.03.2016; in: "Bulletin of the American Physical Society (APS March Meeting)", 61/1 (2016), ISSN: 0003-0503; 1 S.

  1618. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Electron Spin for Modern and Future Microelectronics";
    Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (eingeladen); 01.10.2018 - 05.10.2018; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), ISBN: 978-5-317-05917-0; S. 7.

  1619. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Hopping in a Multiple Ferromagnetic Terminal Configuration";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 75 - 77.

  1620. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; S. 159 - 168.

  1621. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells";
    Vortrag: European Simulation and Modeling Conference (ESMC), Le Havre; 27.10.2008 - 29.10.2008; in: "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1; S. 380 - 384.

  1622. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Modeling Floating Body Z-RAM Storage Cells";
    Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 16.05.2010 - 19.05.2010; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0; S. 45 - 50.

    Zusätzliche Informationen

  1623. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Modeling of Modern MOSFETs with Strain";
    Vortrag: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina (eingeladen); 01.11.2010 - 03.11.2010; in: "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3; S. 1 - 11.

  1624. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "MOSFET and Spin Transistor Simulations";
    Vortrag: 2012 CMOS Emerging Technologies, Vancouver, BC Canada (eingeladen); 18.07.2012 - 21.07.2012; in: "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 S.

  1625. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Scalability of a Second Generation Z-RAM Cell: A Computational Study";
    Vortrag: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 28.03.2010 - 01.04.2010; in: "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9; S. 232 - 247.

  1626. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach";
    Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 21 (2009), ISBN: 978-3-90188-237-1; 4 S.

  1627. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
    Vortrag: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; in: "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503.

  1628. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
    Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland (eingeladen); 28.05.2017 - 30.05.2017; in: "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869; S. 57.

  1629. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Shot Noise Enhancement at Spin-dependent Hopping";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 6 - 7.

  1630. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Shot Noise in Magnetic Tunnel Junctions";
    Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 06.07.2019 - 09.07.2019; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), ISBN: 978-1-950492-09-1; S. 19 - 22.

  1631. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Silicon Spintronics and its Applications";
    Vortrag: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine (eingeladen); 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 51 - 52.

  1632. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor";
    Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 19.08.2018 - 23.08.2018; in: "Proceedings of SPIE Spintronics", (2018), S. 10732-112.

  1633. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-Based CMOS-Compatible Devices";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria (eingeladen); 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 69.

  1634. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-Based CMOS-Compatible Memories";
    Hauptvortrag: International Nanoelectronics Conference (INEC), Kuching, Malaysia (eingeladen); 03.07.2019 - 05.07.2019; in: "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019), ISSN: 2159-3531.

    Zusätzliche Informationen

  1635. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-Based Devices for Future Microelectronics";
    Vortrag: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan (eingeladen); 04.05.2015 - 06.05.2015; in: "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 S.

    Zusätzliche Informationen

  1636. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-Based Silicon and CMOS-Compatible Devices";
    Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA (eingeladen); 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S.

  1637. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures";
    Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 116 - 117.

  1638. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
    Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015).

  1639. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in: "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), S. 114.

  1640. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in: "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), S. 49.

  1641. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Spintronic Memories";
    Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China (eingeladen); 16.12.2019 - 19.12.2019; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), S. 19 - 21.

  1642. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Strain Engineering Techniques: A Rigorous Physical Review";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 05.12.2010 - 10.12.2010; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), S. TH-05.

  1643. Autor/innen: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr:
    "Strain-Controlled Valley Splitting in Si-SiGe Heterostructures";
    Vortrag: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in: "Abstract Book", (2008), S. 20 - 21.

  1644. Autor/innen: Viktor Sverdlov, E360; Zlatan Stanojevic; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
    "Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices";
    Vortrag: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 01.08.2010 - 04.08.2010; in: "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), S. 273 - 274.

  1645. Autor/innen: Viktor Sverdlov, E360; Zlatan Stanojevic; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
    "Enhanced Valley Splitting in Silicon Nanowires and Point Contacts";
    Poster: Nanoelectronics Days 2010, Aachen, Germany; 04.10.2010 - 07.10.2010; in: "Abstract Book of the Nanoelectronics Days 2010", JARA-FIT, (2010), S. 118.

  1646. Autor/innen: Viktor Sverdlov, E360; Zlatan Stanojevic; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
    "Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 05.12.2010 - 10.12.2010; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), S. TH-06.

  1647. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 24.01.2007 - 26.01.2007; in: "EUROSOI 2007", (2007), S. 39 - 40.

  1648. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations";
    Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 08.03.2006 - 10.03.2006; in: "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), S. 133 - 134.

  1649. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    V. Sverdlov, E. Ungersböck, H. Kosina:
    "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
    Hauptvortrag: NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 15.10.2006 - 19.10.2006; in: "NATO Advanced Research Workshop Conference Abstracts", (2006), S. 77 - 78.

  1650. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations";
    Vortrag: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 17 - 18.

  1651. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6; S. 386 - 389.

  1652. Autor/innen: Viktor Sverdlov, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
    "Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 18.09.2006 - 22.09.2006; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4; S. 178 - 181.

  1653. Autor/innen: Viktor Sverdlov, E360; Martin Vasicek, E360; Johann Cervenka, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
    "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in: "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), S. 93.

  1654. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 87 - 88.

  1655. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Electron Spin at Work in Modern and Emerging Devices";
    Vortrag: Energy-Materials-Nanotechnology Meeting on Quantum (EMN), Wien, Austria (eingeladen); 18.06.2017 - 22.06.2017; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN)", (2017), S. 31 - 33.

  1656. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach";
    Vortrag: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 26.06.2017 - 30.06.2017; in: "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0; S. 132 - 133.

  1657. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Modeling Spin-Dependent Phenomena for New Device Applications";
    Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA (eingeladen); 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 45 - 46.

  1658. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics";
    Hauptvortrag: BIT's Annual World Congress of Nano Science & Technology, Fukuoka (eingeladen); 24.10.2017 - 26.10.2017; in: "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), S. 343.

  1659. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 88 - 90.

  1660. Autor/innen: Viktor Sverdlov, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Sverdlov, J. Weinbub, S. Selberherr:
    "Spintronics as a Non-Volatile Complement to Nanoelectronics";
    Vortrag: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia (eingeladen); 04.10.2017 - 06.10.2017; in: "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9; 10 S.

  1661. Autor/innen: Viktor Sverdlov, E360; Thomas Windbacher, E360; Oskar Baumgartner, E360; Franz Schanovsky, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr:
    "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model";
    Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 18.03.2009 - 20.03.2009; in: "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), S. 277 - 280.

  1662. Autor/innen: Viktor Sverdlov, E360; Thomas Windbacher, E360; Oskar Baumgartner, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr:
    "Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model";
    Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in: "EUROSOI 2009 Conference Proceedings", (2009), S. 81 - 82.

  1663. Autor/innen: Viktor Sverdlov, E360; Thomas Windbacher, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr:
    "Stress-Induced Valley Splitting in Silicon Thin Films";
    Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 12.03.2008 - 14.03.2008; in: "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8; S. 93 - 96.

  1664. Autor/innen: Viktor Sverdlov, E360; Thomas Windbacher, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
    "Silicon Spintronics";
    Vortrag: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA (eingeladen); 21.03.2016 - 24.03.2016; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN)", (2016), S. 37 - 38.

  1665. Autor/innen: Viktor Sverdlov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Windbacher, S. Selberherr:
    "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 145 - 148.

    Zusätzliche Informationen

  1666. Autor/innen: Michael Thesberg, E360; Hans Kosina, E360

    M. Thesberg, H. Kosina:
    "NEGF Through Finite-Volume Discretization";
    Vortrag: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 173 - 174.

  1667. Autor/innen: Michael Thesberg, E360; Neophytos Neophytou; Hans Kosina, E360

    M. Thesberg, N. Neophytou, H. Kosina:
    "Calculating the Power Factor of Nano-Composite Materials from Fully Quantum-Mechanical Large-Scale Simulations";
    Vortrag: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in: "Book of Abstracts 14th European Conference on Thermoelectrics", (2016).

  1668. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou; Hans Kosina, E360

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations";
    Vortrag: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 28.06.2015 - 02.07.2015; in: "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 S.

  1669. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou; Hans Kosina, E360

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study";
    Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015).

  1670. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou; Hans Kosina, E360

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 70.

  1671. Autor/innen: Michael Thesberg, E360; Mahdi Pourfath, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
    "Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF";
    Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; 4 S.

  1672. Autor/innen: Martin Thurner, E360; Philipp Lindorfer, E360; Siegfried Selberherr, E360

    M. Thurner, P. Lindorfer, S. Selberherr:
    "Numerical Treatment of Nonrectangular Field-Oxide for 3D MOSFET Simulation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 375 - 381.

  1673. Autor/innen: Martin Thurner, E360; Siegfried Selberherr, E360

    M. Thurner, S. Selberherr:
    "3D MOSFET Device Effects due to Field Oxide";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), S. 245 - 248.

    Zusätzliche Informationen

  1674. Autor/innen: Martin Thurner, E360; Siegfried Selberherr, E360

    M. Thurner, S. Selberherr:
    "Comparison of Long- and Short-Channel MOSFETs Carried Out by 3D-MINIMOS";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), S. 409 - 412.

  1675. Autor/innen: Martin Thurner, E360; Siegfried Selberherr, E360

    M. Thurner, S. Selberherr:
    "Die Erweiterung von MINIMOS auf ein 3D Simulationsprogramm";
    Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in: "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x; S. 116 - 121.

    Zusätzliche Informationen

  1676. Autor/innen: Martin Thurner, E360; Siegfried Selberherr, E360

    M. Thurner, S. Selberherr:
    "The Extension of MINIMOS to a Three Dimensional Simulation Program";
    Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in: "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), S. 327 - 332.

  1677. Autor/innen: Philippe Tillet; Karl Rupp, E360; Siegfried Selberherr, E360

    Ph. Tillet, K. Rupp, S. Selberherr:
    "An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations";
    Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", ACM, (2012), ISBN: 978-1-61839-788-1; 7 S.

  1678. Autor/innen: Philippe Tillet; Karl Rupp, E360; Siegfried Selberherr, E360; Ch.-T. Lin

    Ph. Tillet, K. Rupp, S. Selberherr, C. Lin:
    "Towards Performance-Portable, Scalable, and Convenient Linear Algebra";
    Vortrag: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 24.06.2013 - 25.06.2013; in: "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), S. 1 - 8.

  1679. Autor/in: Alexander Toifl, E360

    A. Toifl:
    "Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine";
    Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 20.10.2020; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), S. 1.

  1680. Autor/innen: Alexander Toifl, E360; Michael Quell, E360; Andreas Hössinger, Silvaco Europe L ...; Artem Babayan, Silvaco Europe Ltd.; Siegfried Selberherr, E360; Josef Weinbub, E360

    A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub:
    "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 327 - 330.

    Zusätzliche Informationen

  1681. Autor/innen: Alexander Toifl, E360; Vito Simonka, E360; Andreas Hössinger, Silvaco Europe L ...; Siegfried Selberherr, E360; Josef Weinbub, E360

    A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
    "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 336 - 339.

    Zusätzliche Informationen

  1682. Autor/innen: M. Toledano-Luque; Ben Kaczer; J. Franco; Philippe J. Roussel; Markus Bina; Tibor Grasser, E360; M. Cho; P. Weckx; Guido Groeseneken

    M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken:
    "Degradation of time dependent variability due to interface state generation";
    Vortrag: International Symposium on VLSI Technology, Kyoto, Japan; 11.06.2013 - 14.06.2013; in: "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0; S. 190 - 191.

  1683. Autor/innen: M. Toledano-Luque; Ben Kaczer; J. Franco; Ph. J. Roussel; Tibor Grasser, E360; T.Y. Hoffmann; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken:
    "From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation";
    Vortrag: Symposium on VLSI Technology, Kyoto, Japan; 14.06.2011 - 16.06.2011; in: "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6; 2 S.

  1684. Autor/innen: M. Toledano-Luque; Ben Kaczer; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 28.

  1685. Autor/innen: M. Toledano-Luque; Ben Kaczer; Ph. J. Roussel; Tibor Grasser, E360; G.I. Wirth; J. Franco; C. Vrancken; N. Horiguchi; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken:
    "Response of a Single Trap to AC Negative Bias Temperature Stress";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 S.

  1686. Autor/innen: M. Toledano-Luque; Ben Kaczer; E. Simoen; R. Degraeve; J. Franco; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs";
    Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S.

  1687. Autor/innen: S. B. Touski; Z. Chaghazardi; Mahdi Pourfath, E360; Mahdi Moradinasab, E360; R. Faez; Hans Kosina, E360

    S. Touski, Z. Chaghazardi, M. Pourfath, M. Moradinasab, R. Faez, H. Kosina:
    "Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation";
    Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 101 - 102.

  1688. Autor/innen: S. B. Touski; Mahdi Pourfath, E360; Hans Kosina, E360

    S. Touski, M. Pourfath, H. Kosina:
    "Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 108 - 109.

  1689. Autor/innen: K. Traar; W. Mader; Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360

    K. Traar, W. Mader, O. Heinreichsberger, S. Selberherr, M. Stiftinger:
    "High Performance Preconditioning on Supercomputers for the 3D Device Simulator MINIMOS";
    Vortrag: Supercomputing Conference, New York; 12.11.1990 - 16.11.1990; in: "Proceedings Supercomputing 90 Conf.", (1990), S. 224 - 231.

  1690. Autor/innen: K. Traar; Martin Stiftinger, E360; Otto Heinreichsberger, E360; Siegfried Selberherr, E360

    K. Traar, M. Stiftinger, O. Heinreichsberger, S. Selberherr:
    "Three-Dimensional Simulation of Semiconductor Devices on Supercomputers";
    Vortrag: Conference on Supercomputing, Köln; 17.06.1991 - 21.06.1991; in: "Proceedings ACM Conf. on Supercomputing", (1991), ISBN: 0-89791-434-1; S. 154 - 162.

    Zusätzliche Informationen

  1691. Autor/innen: Oliver Triebl, E360; Tibor Grasser, E360

    O. Triebl, T. Grasser:
    "Investigation of Vector Discretization Schemes for Box Volume Methods";
    Vortrag: The Nanotechnology Conference and Trade Show, Santa Clara; 20.05.2007 - 24.05.2007; in: "NSTI Nanotech Proceedings", 3 (2007), ISBN: 1-4200-6184-4; S. 61 - 64.

  1692. Autor/innen: Oliver Triebl, E360; Tibor Grasser, E360

    O. Triebl, T. Grasser:
    "Vector Discretization Schemes Based on Unstructured Neighbourhood Information";
    Vortrag: International Semiconductor Conference CAS, Sinaia; 27.09.2006 - 29.09.2006; in: "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7; S. 337 - 340.

  1693. Autor/innen: Christian Troger, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Troger, H. Kosina, S. Selberherr:
    "A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers";
    Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 26 - 27.

  1694. Autor/innen: Christian Troger, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Troger, H. Kosina, S. Selberherr:
    "A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs";
    Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 20.01.2000 - 21.01.2000; in: "European Workshop on Ultimate Integration of Silicon", (2000), S. 123 - 126.

  1695. Autor/innen: Christian Troger, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Troger, H. Kosina, S. Selberherr:
    "Modeling Nonparabolicity Effects in Silicon Inversion Layers";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 323 - 326.

    Zusätzliche Informationen

  1696. Autor/innen: Konstantinos Tselios, E360-01; Bernhard Stampfer, E360; Jakob Michl, E360; Eleftherios Ioannidis; H. Enichlmair; Michael Waltl, E360

    K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl:
    "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), S. 1 - 6.

    Zusätzliche Informationen

  1697. Autor/innen: Walter Tuppa, E360; Siegfried Selberherr, E360

    W. Tuppa, S. Selberherr:
    "A CASE-Oriented Configuration Management Agent";
    Vortrag: International Conference on Artificial Intelligence, Expert Systems and Neural Networks, Honolulu; 19.08.1996 - 21.08.1996; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence, Expert Systems and Neural Networks", (1996), ISBN: 0-88986-211-7; S. 368 - 371.

  1698. Autor/innen: Walter Tuppa, E360; Siegfried Selberherr, E360

    W. Tuppa, S. Selberherr:
    "A CASE-Oriented Configuration Management Utility";
    Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 25.04.1996 - 27.04.1996; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1996), ISBN: 0-88986-201-x; S. 83 - 87.

  1699. Autor/innen: Walter Tuppa, E360; Siegfried Selberherr, E360

    W. Tuppa, S. Selberherr:
    "A Configuration Management Utility with CASE-Orientation";
    Vortrag: International Conference on Modelling, Simulation and Optimization, Gold Coast; 06.05.1996 - 09.05.1996; in: "Proceedings IASTED Intl. Conf. on Modelling, Simulation and Optimization", (1996), ISBN: 0-88986-197-8; S. 242 - 273.

  1700. Autor/innen: S. E. Tyaginov, E360; Markus Bina; J. Franco; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser:
    "On the Importance of Electron-electron Scattering for Hot-carrier Degradation";
    Vortrag: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 08.09.2014 - 11.09.2014; in: "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), S. 858 - 859.

  1701. Autor/innen: S. E. Tyaginov, E360; Markus Bina; J. Franco; Dimitry Osintsev, E360; Oliver Triebl, E360; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
    "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
    Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT16.1 - XT16.8.

  1702. Autor/innen: S. E. Tyaginov, E360; Markus Bina; J. Franco; Dimitry Osintsev, E360; Yannick Wimmer, E360; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
    "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 98 - 101.

  1703. Autor/innen: S. E. Tyaginov, E360; Markus Bina; J. Franco; Yannick Wimmer, E360; Dimitry Osintsev, E360; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
    "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 89 - 92.

    Zusätzliche Informationen

  1704. Autor/innen: S. E. Tyaginov, E360; Markus Bina, E360; J. Franco; Yannick Wimmer, E360; Florian Rudolf, E360; H. Enichlmair; J.M. Park; Ben Kaczer; Hajdin Ceric, E360; Tibor Grasser, E360

    S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
    "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8; S. 63 - 68.

    Zusätzliche Informationen

  1705. Autor/innen: S. E. Tyaginov, E360; A Chasin; Alexander Makarov, E360; Al-Moatasem El-Sayed, E360; Markus Jech, E360; An De Keersgieter; G. Eneman; Michiel Vandemaele; J. Franco; D Linten; Ben Kaczer

    S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer:
    "Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs";
    Vortrag: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), S. 565 - 566.

  1706. Autor/innen: S. E. Tyaginov, E360; Wolfgang Gös, E360; Tibor Grasser, E360; Viktor Sverdlov, E360; Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360

    S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
    "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
    Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 514 - 522.

  1707. Autor/innen: S. E. Tyaginov, E360; Tibor Grasser, E360

    S. E. Tyaginov, T. Grasser:
    "Modeling of Hot-Carrier Degradation: Physics and Controversial Issues";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 206 - 215.

  1708. Autor/innen: S. E. Tyaginov, E360; Markus Jech, E360; Gerhard Rzepa, E360; Alexander Grill, E360; Al-Moatasem El-Sayed, E360; G. Pobegen; Alexander Makarov, E360; Tibor Grasser, E360

    S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser:
    "Border Trap Based Modeling of SiC Transistor Transfer Characteristics";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3.

    Zusätzliche Informationen

  1709. Autor/innen: S. E. Tyaginov, E360; Markus Jech, E360; Prateek Sharma, E360; J. Franco; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser:
    "On the Temperature Behavior of Hot-Carrier Degradation";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), S. 143 - 146.

    Zusätzliche Informationen

  1710. Autor/innen: S. E. Tyaginov, E360; Alexander Makarov, E360; Markus Jech, E360; J. Franco; Prateek Sharma, E360; Ben Kaczer; Tibor Grasser, E360

    S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
    "On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation";
    Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 09.10.2016 - 13.10.2016; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0; S. 95 - 98.

    Zusätzliche Informationen

  1711. Autor/innen: S. E. Tyaginov, E360; Dimitry Osintsev, E360; Yury Illarionov, E360; J.M. Park; H. Enichlmair; M. I. Vexler; Tibor Grasser, E360

    S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
    "Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
    Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 441.

  1712. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; H. Enichlmair; C. Jungemann; Jong Mun Park, E360; E. Seebacher; Roberto Orio, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
    "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
    Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), S. 1525 - 1529.

  1713. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; H. Enichlmair; J.M. Park; C. Jungemann; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
    "Physics-Based Hot-Carrier Degradation Modeling";
    Vortrag: 219th ECS Meeting, Montreal, Canada (eingeladen); 01.05.2011 - 06.05.2011; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 S.

  1714. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; C. Jungemann; H. Enichlmair; Jong Mun Park, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
    "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 12.09.2011 - 16.09.2011; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), S. 151 - 154.

  1715. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; Oliver Triebl, E360; Hajdin Ceric, E360; Tibor Grasser, E360; H. Enichlmair; J.M. Park; C. Jungemann

    S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
    "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 123 - 126.

    Zusätzliche Informationen

  1716. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; Oliver Triebl, E360; Johann Cervenka, E360; C. Jungemann; Sara Carniello; Jong Mun Park, E360; H. Enichlmair; Markus Karner, E360; Christian Kernstock, E360; E. Seebacher; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
    "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 341 - 345.

  1717. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; Oliver Triebl, E360; Johann Cervenka, E360; C. Jungemann; Sara Carniello; Jong Mun Park, E360; H. Enichlmair; Markus Karner, E360; Christian Kernstock, E360; E. Seebacher; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
    "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 11.10.2010 - 15.10.2010; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 S.

  1718. Autor/innen: S. E. Tyaginov, E360; Ivan Starkov, E360; Oliver Triebl, E360; Markus Karner, E360; Christian Kernstock, E360; C. Jungemann; H. Enichlmair; Jong Mun Park, E360; Tibor Grasser, E360

    S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
    "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; S. 1 - 5.

    Zusätzliche Informationen

  1719. Autor/innen: S. E. Tyaginov, E360; Viktor Sverdlov, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
    "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009).

  1720. Autor/innen: S. E. Tyaginov, E360; Viktor Sverdlov, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
    "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
    Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 29 - 32.

    Zusätzliche Informationen

  1721. Autor/innen: S. E. Tyaginov, E360; Viktor Sverdlov, E360; Wolfgang Gös, E360; Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Tibor Grasser, E360

    S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
    "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
    Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 13.04.2009 - 17.04.2009; in: "Proceedings of the 2009 MRS Spring Meeting", (2009).

  1722. Autor/innen: S. E. Tyaginov, E360; Viktor Sverdlov, E360; Wolfgang Gös, E360; Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Tibor Grasser, E360

    S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
    "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
    Vortrag: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 19.03.2009 - 20.03.2009; in: "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), S. 84.

  1723. Autor/innen: S. E. Tyaginov, E360; M.I. Vexler; A. El Hdiy; K. Gacem; V. Zaporojtchenko

    S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko:
    "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures";
    Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 23.06.2008 - 25.06.2008; in: "15th Workshop on Dielectrics in Microelectronics", (2008), S. 227 - 228.

  1724. Autor/innen: S. E. Tyaginov; A.-M. El-Sayed; Alexander Makarov, E360; A Chasin; H Arimura; Michiel Vandemaele; Markus Jech, E360; Elena Capogreco; L. Witters; Alexander Grill; An De Keersgieter; G. Eneman; Dimitri Linten; Ben Kaczer

    S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer:
    "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs";
    Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2; S. 498 - 501.

    Zusätzliche Informationen

  1725. Autor/innen: S. E. Tyaginov; Alexander Grill; Michiel Vandemaele; Tibor Grasser, E360; Geert Hellings; Alexander Makarov, E360; Markus Jech, E360; D Linten; Ben Kaczer

    S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer:
    "A Compact Physics Analytical Model for Hot-Carrier Degradation";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 7.

    Zusätzliche Informationen

  1726. Autor/innen: Bianka Ullmann, E360; Markus Jech, E360; S. E. Tyaginov, E360; Michael Waltl, E360; Yury Illarionov, E360; Alexander Grill, E360; Katja Puschkarsky; H. Reisinger; Tibor Grasser, E360

    B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
    "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
    Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 04.04.2017 - 06.04.2017; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; S. XT-10.1 - XT-10.6.

    Zusätzliche Informationen

  1727. Autor/innen: Bianka Ullmann, E360; Michael Waltl, E360; Tibor Grasser, E360

    B. Ullmann, M. Waltl, T. Grasser:
    "Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
    Vortrag: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in: "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7; S. 36 - 37.

  1728. Autor/innen: Stephan Enzo Ungersböck, E360; Siddhartha Dhar, E360; Gerhard Karlowatz, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
    "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
    Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 141 - 142.

  1729. Autor/innen: Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Byoung-Ho Cheong; Won-Bong Choi

    E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
    "Analysis of Carrier Transport in Carbon Nanotube FET Devices";
    Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 1059 - 1061.

  1730. Autor/innen: Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Byoung-Ho Cheong; Won-Bong Choi

    E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
    "Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 411 - 414.

  1731. Autor/innen: Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    E. Ungersböck, H. Kosina:
    "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers";
    Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 10 - 11.

  1732. Autor/innen: Stephan Enzo Ungersböck, E360; Hans Kosina, E360

    E. Ungersböck, H. Kosina:
    "The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 311 - 314.

    Zusätzliche Informationen

  1733. Autor/innen: Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, H. Kosina, S. Selberherr:
    "The Influence of Stress on Inversion Layer Mobility";
    Vortrag: Advanced Heterostructure Workshop (AHW), Kona (eingeladen); 03.12.2006 - 08.12.2006; in: "Abstracts Advanced Heterostructure Workshop", (2006), S. TH-2.

  1734. Autor/innen: Stephan Enzo Ungersböck, E360; Mahdi Pourfath, E360; Andreas Gehring, E360; Hans Kosina, E360; Byoung-Ho Cheong; Siegfried Selberherr, E360

    E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
    "Optimization of Carbon Nanotube Field Effect Transistors";
    Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 117 - 120.

    Zusätzliche Informationen

  1735. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 43 - 46.

    Zusätzliche Informationen

  1736. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
    Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1397, 1 S.

  1737. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Modeling of Advanced Semiconductor Devices";
    Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto (eingeladen); 28.08.2006 - 01.09.2006; in: "ECS Transactions", (2006), ISBN: 1-56677-512-4; S. 207 - 216.

  1738. Autor/innen: Stephan Enzo Ungersböck, E360; Viktor Sverdlov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
    "Strain Engineering for CMOS Devices";
    Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (eingeladen); 23.10.2006 - 26.10.2006; in: "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7; S. 124 - 127.

  1739. Autor/innen: Sergey Vainshtein; Valentin Yuferev; Juha Kostamovaara; Vassil Palankovski, E360

    S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Palankovski:
    "Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications";
    Hauptvortrag: International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria (eingeladen); 22.09.2009 - 24.09.2009; in: "Annual Journal of Electronics", Technical University of Sofia, 4 (2010), ISSN: 1313-1842; S. 12 - 17.

  1740. Autor/innen: Michiel Vandemaele; Ben Kaczer; Zlatan Stanojevic; S. E. Tyaginov, E360; Alexander Makarov, E360; A Chasin; H. Mertens; D Linten; Guido Groeseneken

    M. Vandemaele, B. Kaczer, Z. Stanojevic, S. E. Tyaginov, A. Makarov, A. Chasin, H. Mertens, D. Linten, G Groeseneken:
    "Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3.

    Zusätzliche Informationen

  1741. Autor/innen: Michiel Vandemaele; Ben Kaczer; S. E. Tyaginov, E360; Zlatan Stanojevic; Alexander Makarov, E360; A Chasin; E. Bury; H. Mertens; D Linten; Guido Groeseneken

    M. Vandemaele, B. Kaczer, S. E. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, G Groeseneken:
    "Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 7.

    Zusätzliche Informationen

  1742. Autor/in: Martin Vasicek, E360

    M. Vasicek:
    "Advanced Macroscopic Transport Models";
    Vortrag: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (eingeladen); 20.04.2009 - 24.04.2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), S. 32.

  1743. Autor/innen: Martin Vasicek, E360; Johann Cervenka, E360; Markus Karner, E360; Tibor Grasser, E360

    M. Vasicek, J. Cervenka, M. Karner, T. Grasser:
    "Consistent Higher-Order Transport Models for SOI MOSFETs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 129 - 132.

    Zusätzliche Informationen

  1744. Autor/innen: Martin Vasicek, E360; Johann Cervenka, E360; Markus Karner, E360; Martin Wagner, E360; Tibor Grasser, E360

    M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser:
    "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
    Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 96 - 97.

  1745. Autor/innen: Martin Vasicek, E360; Johann Cervenka, E360; Martin Wagner, E360; Markus Karner, E360; Tibor Grasser, E360

    M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
    "A 2D-Non-Parabolic Six Moments Model";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S.

  1746. Autor/innen: Martin Vasicek, E360; Markus Karner, E360; Stephan Enzo Ungersböck, E360; Martin Wagner, E360; Hans Kosina, E360; Tibor Grasser, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser:
    "Modeling of Macroscopic Transport Parameters in Inversion Layers";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 201 - 204.

    Zusätzliche Informationen

  1747. Autor/innen: Aleksandr Vasilev, E360-01; Markus Jech, E360; Alexander Grill; Gerhard Rzepa; Christian Schleich, E360; Alexander Makarov, E360; Gregor Pobegen; Tibor Grasser, E360; Michael Waltl, E360; S. E. Tyaginov, E360

    A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
    "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), S. 1 - 4.

    Zusätzliche Informationen

  1748. Autor/innen: Peter Verhas, E360; Siegfried Selberherr, E360

    P. Verhas, S. Selberherr:
    "Automatic Device Characterization";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 399 - 406.

  1749. Autor/innen: M. I. Vexler; Yury Illarionov, E360; S. M. Suturin; V. V. Fedorov; N. S. Sokolov

    M. I. Vexler, Yu. Illarionov, S. M. Suturin, V. V. Fedorov, N. S. Sokolov:
    "Tunnel charge transport in Au/CaF2/Si(111) system";
    Vortrag: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 74.

  1750. Autor/innen: M.I. Vexler; Yury Illarionov, E360; S. E. Tyaginov, E360; N. S. Sokolov; V. V. Fedorov; Tibor Grasser, E360

    M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
    "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
    Vortrag: DIELECTRICS-2014, St-Petersburg, Russia; 02.06.2014 - 06.06.2014; in: "Materials of XIII International conference DIELECTRICS", (2014), S. 159 - 162.

  1751. Autor/innen: P Vitanov; N LeQuang; A Harizanova; O Nichiporuk; T Ivanova; Stanislav Vitanov, E360; Vassil Palankovski, E360

    P. Vitanov, N. LeQuang, A. Harizanova, O. Nichiporuk, T. Ivanova, S. Vitanov, V. Palankovski:
    "New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells";
    Vortrag: World Renewable Energy Congress (WREC), Firenze; 19.08.2006 - 25.08.2006; in: "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8; S. 564.

  1752. Autor/innen: P Vitanov; Stanislav Vitanov, E360; Vassil Palankovski, E360

    P. Vitanov, S. Vitanov, V. Palankovski:
    "Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells";
    Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 04.09.2006 - 08.09.2006; in: "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5; S. 1475 - 1478.

  1753. Autor/innen: Stanislav Vitanov, E360; J. Kuzmik; Vassil Palankovski, E360

    S. Vitanov, J. Kuzmik, V. Palankovski:
    "Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S.

    Zusätzliche Informationen

  1754. Autor/innen: Stanislav Vitanov, E360; J. Kuzmik; Vassil Palankovski, E360

    S. Vitanov, J. Kuzmik, V. Palankovski:
    "Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs";
    Vortrag: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 14.09.2011 - 16.09.2011; in: "Annual Journal of Electronics", (2011), S. 113 - 116.

  1755. Autor/innen: Stanislav Vitanov, E360; Mihail Nedjalkov, E360; Vassil Palankovski, E360

    S. Vitanov, M. Nedjalkov, V. Palankovski:
    "A Monte Carlo Model of Piezoelectric Scattering in GaN";
    Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2006 - 24.08.2006; in: "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), S. B-75.

  1756. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Electron Mobility Models for III-Nitrides";
    Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 22.09.2010 - 24.09.2010; in: "Annual Journal of Electronics", (2010), ISSN: 1313-1842; S. 18 - 21.

  1757. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation";
    Vortrag: Junior Scientist Conference 2008, Technische Universität Wien; 17.11.2008 - 18.11.2008; in: "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5; S. 221 - 222.

  1758. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs";
    Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in: "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9; S. 59 - 60.

  1759. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs";
    Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 14.09.2009 - 17.09.2009; in: "Annual Journal of Electronics", (2009), ISSN: 1313-1842; S. 144 - 147.

  1760. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Monte Carlo Study of Transport Properties of InN";
    Poster: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in: "The 13th International Conference on Narrow Gap Semiconductors", (2007), S. 99.

  1761. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study";
    Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S.

    Zusätzliche Informationen

  1762. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360

    S. Vitanov, V. Palankovski:
    "Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer";
    Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 24.09.2008 - 26.09.2008; in: "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842; S. 67 - 70.

  1763. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Maroldt; Rüdiger Quay, E360

    S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
    "A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates";
    Vortrag: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 02.11.2009 - 04.11.2009; in: "HETECH 2009 Book of Abstracts", (2009), S. 109 - 110.

  1764. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Maroldt; Rüdiger Quay, E360

    S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
    "High-Temperature Modeling of AlGaN/GaN HEMTs";
    Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 09.12.2009 - 11.12.2009; in: "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1; 2 S.

    Zusätzliche Informationen

  1765. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Maroldt; Rüdiger Quay, E360

    S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
    "Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs";
    Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 S.

  1766. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Murad; T. Rödle; Rüdiger Quay; Siegfried Selberherr, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
    "Hydrodynamic Modeling of AlGaN/GaN HEMTs";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 273 - 276.

    Zusätzliche Informationen

  1767. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; S. Murad; T. Rödle; Rüdiger Quay, E360; Siegfried Selberherr, E360

    S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
    "Predictive Simulation of AlGaN/GaN HEMTs";
    Vortrag: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 14.10.2007 - 17.10.2007; in: "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3; S. 131 - 134.

    Zusätzliche Informationen

  1768. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; Gianmauro Pozzovivo; Jan Kuzmik, E362; Rüdiger Quay, E360

    S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay:
    "Systematical Study of InAlN/GaN Devices by Numerical Simulation";
    Vortrag: European Workshop on Heterostructure Technology, Venice; 03.11.2008 - 05.11.2008; in: "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3; S. 159 - 160.

  1769. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; Rüdiger Quay; Erasmus Langer, E360

    S. Vitanov, V. Palankovski, R. Quay, E. Langer:
    "Modeling of Electron Transport in GaN-based Materials and Devices";
    Poster: 28th International Conference on the Physics of Semiconductors, Wien; 24.07.2006 - 28.07.2006; in: "28th International Conference on the Physics of Semiconductors", (2007), S. 244.

  1770. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; Rüdiger Quay; Erasmus Langer, E360

    S. Vitanov, V. Palankovski, R. Quay, E. Langer:
    "Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs";
    Vortrag: Target Days (TARGET), Frascati; 16.10.2006 - 18.10.2006; in: "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5; S. 81 - 84.

  1771. Autor/innen: Stanislav Vitanov, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    S. Vitanov, V. Palankovski, S. Selberherr:
    "Hydrodynamic Models for GaN-Based HEMTs";
    Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 S.

  1772. Autor/innen: Stanislav Vitanov, E360; P Vitanov; Vassil Palankovski, E360

    S. Vitanov, P. Vitanov, V. Palankovski:
    "Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon";
    Poster: European Photovoltaic Solar Energy Conference, Valencia; 01.09.2008 - 05.09.2008; in: "23rd European Photovoltaic Solar Energy Conference", (2008), S. 1743 - 1745.

  1773. Autor/innen: Martin Wagner, E360; Tibor Grasser, E360; Markus Karner, E360; Hans Kosina, E360

    M. Wagner, T. Grasser, M. Karner, H. Kosina:
    "Quantum Correction for DG MOSFETs";
    Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 87 - 88.

  1774. Autor/innen: Martin Wagner, E360; Markus Karner, E360; Tibor Grasser, E360

    M. Wagner, M. Karner, T. Grasser:
    "Quantum Correction Models for Modern Semiconductor Devices";
    Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Semiconductor Devices", Vol. 1 (2005), S. 458 - 461.

  1775. Autor/innen: Markus Wagner; Karl Rupp, E360; Josef Weinbub, E360

    M. Wagner, K. Rupp, J. Weinbub:
    "A Comparison of Algebraic Multigrid Preconditioners using Graphics Processing Units and Multi-Core Central Processing Units";
    Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "Proceedings of the High Performance Computing Symposium (HPC)", ACM, (2012), ISBN: 978-1-61839-788-1; 7 S.

    Zusätzliche Informationen

  1776. Autor/innen: Martin Wagner, E360; Gerhard Span; Tibor Grasser, E360

    M. Wagner, G. Span, T. Grasser:
    "Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content";
    Vortrag: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; S. 216 - 217.

  1777. Autor/innen: Martin Wagner, E360; Gerhard Span; Stefan Holzer, E360; Tibor Grasser, E360

    M. Wagner, G. Span, S. Holzer, T. Grasser:
    "Design Optimization of Large Area Si/SiGe Thermoelectric Generators";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 397 - 400.

    Zusätzliche Informationen

  1778. Autor/innen: Martin Wagner, E360; Gerhard Span; Stefan Holzer, E360; Oliver Triebl, E360; Tibor Grasser, E360

    M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser:
    "Power Output Improvement of SiGe Thermoelectric Generators";
    Vortrag: Meeting of the Electrochemical Society (ECS), Cancun; 29.10.2006 - 03.11.2006; in: "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1516, 1 S.

  1779. Autor/innen: Paul-Jürgen Wagner, E360; T. Aichinger; Tibor Grasser, E360; M. Nelhiebel; L.K.J. Vandamme

    P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme:
    "Possible Correlation between Flicker Noise and Bias Temperature Stress";
    Vortrag: International Conference on Noise and Fluctuations (ICNF), Pisa; 14.06.2009 - 19.06.2009; in: "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), S. 621 - 624.

  1780. Autor/innen: Paul-Jürgen Wagner, E354-01; Tibor Grasser, E360; H. Reisinger; Ben Kaczer

    P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer:
    "Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy";
    Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 134 - 138.

  1781. Autor/innen: Paul-Jürgen Wagner, E360; Ben Kaczer; A Scholten; H. Reisinger; Sergey Bychikhin; Dionyz Pogany, E362; L.K.J. Vandamme; Tibor Grasser, E360

    P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser:
    "On the Correlation Between NBTI, SILC, and Flicker Noise";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 60 - 64.

  1782. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
    "A Generally Applicable Approach for Advanced Equation Assembling";
    Vortrag: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 03.11.2003 - 05.11.2003; in: "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6; S. 494 - 499.

  1783. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
    "A Simulator Module for Advanced Equation Assembling";
    Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 55 - 64.

  1784. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
    "Advanced Equation Assembling Techniques for Numerical Simulators";
    Vortrag: European Simulation and Modeling Conference (ESMC), Naples; 27.10.2003 - 29.10.2003; in: "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x; S. 390 - 394.

  1785. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Claus Fischer, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
    "Concepts and Implementation of an Advanced Equation Assembly Module";
    Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 18.07.2004 - 21.07.2004; in: "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2; S. 150 - 155.

    Zusätzliche Informationen

  1786. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, S. Selberherr:
    "Benchmarking Linear Solvers with Semiconductor Simulation Examples";
    Vortrag: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 30.06.2004 - 02.07.2004; in: "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 S.

    Zusätzliche Informationen

  1787. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, S. Selberherr:
    "Mixed-Mode Device and Circuit Simulation";
    Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin (eingeladen); 24.06.2004 - 26.06.2004; in: "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7; S. 36 - 41.

    Zusätzliche Informationen

  1788. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, S. Selberherr:
    "Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 351 - 354.

    Zusätzliche Informationen

  1789. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, S. Selberherr:
    "Physical Modeling of Semiconductor Devices for Microwave Applications";
    Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi (eingeladen); 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S.

    Zusätzliche Informationen

  1790. Autor/innen: Stephan Wagner, E360; Vassil Palankovski, E360; Tibor Grasser, E360; G. Röhrer; Siegfried Selberherr, E360

    S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
    "A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
    Vortrag: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 83 - 84.

  1791. Autor/innen: Stephan Wagner, E360; Vassil Palankovski, E360; Tibor Grasser, E360; R. Schultheis; Siegfried Selberherr, E360

    S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
    "Small-Signal Analysis and Direct S-Parameter Extraction";
    Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 18.11.2002 - 19.11.2002; in: "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0; S. 50 - 55.

    Zusätzliche Informationen

  1792. Autor/innen: Stephan Wagner, E360; Vassil Palankovski, E360; Rüdiger Quay, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
    "Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
    Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 836 - 838.

  1793. Autor/innen: Stephan Wagner, E360; Vassil Palankovski, E360; G. Röhrer; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
    "Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
    Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 383 - 388.

  1794. Autor/innen: Dominic Waldhör, E360; Yannick Wimmer, E360; Al-Moatasem El-Sayed, E360; Wolfgang Goes, Silvaco; Michael Waltl, E360; Tibor Grasser, E360

    D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser:
    "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 5.

    Zusätzliche Informationen

  1795. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Characterization and Modeling of Single Charge Trapping in MOS Transistors";
    Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA (eingeladen); 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 9.

    Zusätzliche Informationen

  1796. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Defect Spectroscopy in SiC Devices";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual (eingeladen); 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), S. 1 - 9.

    Zusätzliche Informationen

  1797. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Impact of Defects in Semiconductor Transistors on Devices and Circuits";
    Vortrag: International Meet on Nanotechnology (NANOMEET), Porto, Portugal (eingeladen); 13.09.2021 - 15.09.2021; in: "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), S. 93.

  1798. Autor/in: Michael Waltl, E360

    M. Waltl:
    "Spectroscopy of Single Defects in Semiconductor Transistors";
    Vortrag: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual (eingeladen); 05.11.2020 - 06.11.2020; in: "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020).

  1799. Autor/innen: Michael Waltl, E360; Wolfgang Gös, E360; K. Rott; H. Reisinger; Tibor Grasser, E360

    M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser:
    "A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
    Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT18.1 - XT18.5.

  1800. Autor/innen: Michael Waltl, E360; Alexander Grill, E360; Gerhard Rzepa, E360; Wolfgang Gös, E360; J. Franco; Ben Kaczer; J. Mitard; Tibor Grasser, E360

    M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
    "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
    Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. XT-02-1 - XT-02-6.

    Zusätzliche Informationen

  1801. Autor/innen: Michael Waltl, E360; Paul-Jürgen Wagner, E360; H. Reisinger; K. Rott; Tibor Grasser, E360

    M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser:
    "Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI";
    Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 74 - 79.

  1802. Autor/innen: L. Wang; A.R. Brown; Mihail Nedjalkov, E360; Craig Alexander; B. Cheng; C. Millar; A Asenov

    L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 269 - 272.

    Zusätzliche Informationen

  1803. Autor/innen: L. Wang; A.R. Brown; Mihail Nedjalkov, E360; Craig Alexander; B. Cheng; C. Millar; A Asenov

    L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 112 - 115.

    Zusätzliche Informationen

  1804. Autor/innen: L. Wang; T. Sadi; A.R. Brown; Mihail Nedjalkov, E360; Craig Alexander; B. Cheng; C. Millar; A Asenov

    L. Wang, T. Sadi, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs";
    Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 34 - 35.

  1805. Autor/innen: L. Wang; T. Sadi; Mihail Nedjalkov, E360; A.R. Brown; Craig Alexander; B. Cheng; C. Millar; A Asenov

    L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov:
    "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device";
    Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 155 - 156.

  1806. Autor/innen: Yushan Wang; Marc Baboulin; Karl Rupp, E360; Oliver Le Maitre

    Y. Wang, M. Baboulin, K. Rupp, O. Le Maitre:
    "Solving 3D incompressible Navier-Stokes equations on hybrid CPU/GPU systems";
    Vortrag: High Performance Computing Symposium (HPC), Tampa, Florida, USA; 13.04.2014 - 16.04.2014; in: "HPC '14 Proceedings of the High Performance Computing Symposium", ACM, (2014), S. 1 - 8.

  1807. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360

    C. Wasshuber, H. Kosina:
    "A Multipurpose Single Electron Device and Circuit Simulator";
    Vortrag: Silicon Nanoelectronics Workshop, Honolulu; 09.06.1996 - 10.06.1996; in: "Abstracts Silicon Nanoelectronics Workshop", (1996), S. 37.

  1808. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360

    C. Wasshuber, H. Kosina:
    "A Single Electron Device and Circuit Simulator";
    Vortrag: Nanostructures and Mesoscopic Systems, Santa Fe; 19.05.1996 - 24.05.1996; in: "Proceedings Nanostructures and Mesoscopic Systems", (1996), S. 43.

  1809. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360

    C. Wasshuber, H. Kosina:
    "A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 135 - 136.

    Zusätzliche Informationen

  1810. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360

    C. Wasshuber, H. Kosina:
    "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge";
    Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 4.

  1811. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Wasshuber, H. Kosina, S. Selberherr:
    "Single-Electron Memories";
    Vortrag: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), S. FrP1.

  1812. Autor/innen: Christoph Wasshuber, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Wasshuber, H. Kosina, S. Selberherr:
    "Single-Electron Memories with Terabit Capacity";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez (eingeladen); 31.05.1998 - 05.06.1998; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), S. P-Th-17.

  1813. Autor/innen: P. Weckx; Ben Kaczer; M. Toledano-Luque; Tibor Grasser, E360; Ph. J. Roussel; H. Kukner; P. Raghavan; F. Catthoor; G. Groeseneken

    P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken:
    "Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM";
    Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 7.

  1814. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing";
    Vortrag: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 S.

  1815. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "Distributed High-Performance Parallel Mesh Generation with ViennaMesh";
    Vortrag: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 S.

  1816. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "Modeling and Simulation of Two-Dimensional Single-Electron Control";
    Vortrag: International Meet on Nanotechnology (NANOMEET), Porto, Portugal (eingeladen); 13.09.2021 - 15.09.2021; in: "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021).

  1817. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "Modeling and Simulation of Two-Dimensional Single-Electron Dynamics";
    Vortrag: Global Summit on Condensed Matter Physics (CONMAT), Valencia, Spain (virtual) (eingeladen); 18.10.2021 - 20.10.2021; in: "Proceedings of the Global Summit on Condensed Matter Physics (CONMAT)", (2021).

  1818. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "Wigner Signed-Particles: Computational Challenges and Simulation Opportunities";
    Vortrag: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich (eingeladen); 06.07.2022 - 08.07.2022; in: "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), 1 S.

    Zusätzliche Informationen

  1819. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; D.K. Ferry; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, D.K. Ferry, M. Nedjalkov:
    "Electron Interference and Wigner Function Negativity in Dopant Potential Structures";
    Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 14 - 15.

  1820. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Electron Interference in a Double-Dopant Potential Structure";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 52 - 53.

  1821. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Electron Interference in Single- and Double-Dopant Potential Structures";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 103 - 104.

  1822. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Electron Quantum Optics for Quantum Interference Logic Devices";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Hawaii, USA; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 58 - 59.

  1823. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov, S. Selberherr:
    "Electromagnetic Coherent Electron Control";
    Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), virtual (eingeladen); 19.04.2021 - 21.04.2021; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2021), ISBN: 978-1-6654-1510-1; S. 1 - 4.

    Zusätzliche Informationen

  1824. Autor/innen: Josef Weinbub, E360; Johann Cervenka, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
    "A Generic High-Quality Meshing Framework";
    Vortrag: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 25.07.2011 - 28.07.2011; in: "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011), 1 S.

  1825. Autor/innen: Josef Weinbub, E360; Johann Cervenka, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
    "High-Quality Mesh Generation Based on Orthogonal Software Modules";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 139 - 142.

    Zusätzliche Informationen

  1826. Autor/innen: Josef Weinbub, E360; Florian Dang; Tor Gillberg; Siegfried Selberherr, E360

    J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
    "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
    Vortrag: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in: "Book of Abstracts of the Spring Simulation Multiconference (SpringSim), High Performance Computing Symposium (HPC)", (2015), ISBN: 1-56555-355-1; S. 74.

  1827. Autor/innen: Josef Weinbub, E360; Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
    Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015).

  1828. Autor/innen: Josef Weinbub, E360; Paul Ellinghaus, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
    "ViennaWD - Status and Outlook";
    Vortrag: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015; in: "Booklet of the International Wigner Workshop (IW2)", (2015), S. 8.

  1829. Autor/innen: Josef Weinbub, E360; Paul Ellinghaus, E360; Siegfried Selberherr, E360

    J. Weinbub, P. Ellinghaus, S. Selberherr:
    "Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 73.

  1830. Autor/innen: Josef Weinbub, E360; Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    J. Weinbub, R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
    "A Lightweight Material Library for Scientific Computing in C++";
    Vortrag: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; S. 454 - 458.

  1831. Autor/innen: Josef Weinbub, E360; Andreas Hössinger, Silvaco Europe L ...

    J. Weinbub, A. Hössinger:
    "Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach";
    Vortrag: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in: "Proceedings of the High Performance Computing Symposium (HPC)", (2016), ISBN: 978-1-5108-2318-1; S. 18:1 - 18:8.

    Zusätzliche Informationen

  1832. Autor/innen: Josef Weinbub, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Nedjalkov:
    "Computational Strategies for Two-Dimensional Wigner Monte Carlo";
    Hauptvortrag: High Performance Computing Conference (HPC), Borovets, Bulgaria (eingeladen); 02.09.2019 - 06.09.2019; in: "Procedings of the High Performance Computing Conference (HPC)", (2019), S. 55 - 56.

  1833. Autor/innen: Josef Weinbub, E360; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. Weinbub, M. Nedjalkov, I. Dimov, S. Selberherr:
    "Wigner-Signed Particles Study of Double Dopant Quantum Effects";
    Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 50 - 51.

  1834. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Lado Filipovic, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
    "Towards a Free Open Source Process and Device Simulation Framework";
    Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 141 - 142.

  1835. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Florian Rudolf, E360

    J. Weinbub, K. Rupp, F. Rudolf:
    "A Flexible Material Database for Computational Science and Engineering";
    Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 226.

  1836. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "A Flexible Execution Framework for High-Performance TCAD Applications";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 400 - 403.

  1837. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing";
    Vortrag: World Congress on Engineering (WCE), London, UK; 04.07.2012 - 06.07.2012; in: "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3; S. 1076 - 1081.

  1838. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "Distributed Heterogenous High-Performance Computing with ViennaCL";
    Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 88 - 90.

  1839. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX";
    Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 S.

  1840. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development";
    Vortrag: C++Now, Aspen, CO, USA; 13.05.2012 - 18.05.2012; in: "Proceedings of C++Now (2012)", (2012), 10 S.

  1841. Autor/innen: Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    J. Weinbub, K. Rupp, S. Selberherr:
    "ViennaIPD - An Input Control Language for Scientific Computing";
    Vortrag: Industrial Simulation Conference (ISC), Budapest; 07.06.2010 - 09.06.2010; in: "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57; S. 34 - 38.

  1842. Autor/innen: Josef Weinbub, E360; Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    J. Weinbub, P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
    "A Dispatched Covariant Type System for Numerical Applications in C++";
    Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1663 - 1666.

  1843. Autor/innen: Chao Wen; Yury Illarionov, E360; Werner Frammelsberger; Theresia Knobloch, E360; Tibor Grasser, E360; Mario Lanza

    C. Wen, Yu. Illarionov, W. Frammelsberger, T. Knobloch, T. Grasser, M. Lanza:
    "Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films";
    Vortrag: APS March Meeting, College Park, MD, USA; 15.03.2021 - 19.03.2021; in: "Bulletin of the American Physical Society", (2021).

  1844. Autor/innen: Wilfried Wessner, E360; Hajdin Ceric, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    W. Wessner, H. Ceric, J. Cervenka, S. Selberherr:
    "Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 147 - 150.

    Zusätzliche Informationen

  1845. Autor/innen: Wilfried Wessner, E360; Hajdin Ceric, E360; Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
    "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
    Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 41 - 46.

  1846. Autor/innen: Wilfried Wessner, E360; Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
    "Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 109 - 112.

    Zusätzliche Informationen

  1847. Autor/innen: Wilfried Wessner, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    W. Wessner, A. Hössinger, S. Selberherr:
    "Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
    Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 523 - 528.

  1848. Autor/innen: Wilfried Wessner, E360; Christian Hollauer, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr:
    "Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 165 - 168.

    Zusätzliche Informationen

  1849. Autor/innen: Wilfried Wessner, E360; Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
    "Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
    Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi; 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S.

    Zusätzliche Informationen

  1850. Autor/innen: Christoph Wilhelmer, E360-01; Markus Jech, E360; Dominic Waldhör, E360; Al-Moatasem El-Sayed, E360; Lukas Cvitkovich, E360-01; Tibor Grasser, E360

    C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser:
    "Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 243 - 246.

    Zusätzliche Informationen

  1851. Autor/innen: Christoph Wilhelmer, E360-01; Dominic Waldhör, E360; Markus Jech, E360; Al-Moatasem El-Sayed, E360; Lukas Cvitkovich, E360-01; Michael Waltl, E360; Tibor Grasser, E360

    C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser:
    "Ab-Initio Study of Multi-State Defects in Amorphous SiO2";
    Vortrag: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 264.

  1852. Autor/innen: Karl Wimmer, E360; Robert Bauer, E360; Stefan Halama, E360; Gerhard Hobler, E362; Siegfried Selberherr, E360

    K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr:
    "Prozess-Simulation in nichtplanaren Strukturen mit PROMIS";
    Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in: "Proceedings NuTech", (1990), S. 4.

  1853. Autor/innen: Karl Wimmer, E360; Robert Bauer, E360; Stefan Halama, E360; Gerhard Hobler, E362; Siegfried Selberherr, E360

    K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr:
    "Simulation nichtplanarer Herstellungsprozesse mit PROMIS";
    Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), S. 10 - 19.

  1854. Autor/innen: Karl Wimmer, E360; Robert Bauer, E360; Stefan Halama, E360; Gerhard Hobler, E362; Siegfried Selberherr, E360

    K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr:
    "Transformation Methods for Nonplanar Process Simulation";
    Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 131 - 138.

  1855. Autor/innen: Karl Wimmer, E360; Robert Bauer, E360; Siegfried Selberherr, E360

    K. Wimmer, R. Bauer, S. Selberherr:
    "Body-Fitting Coordinate Generation for Two-Dimensional Process-Simulation";
    Vortrag: Conference on Signals and Systems, Chengdu; 08.10.1990 - 10.10.1990; in: "Abstracts AMSE Conf. Signals and Systems", 2 (1990), S. 239.

  1856. Autor/innen: Yannick Wimmer, E360; Wolfgang Gös, E360; Al-Moatasem El-Sayed, E360; A. L. Shluger; Tibor Grasser, E360

    Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
    "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 44 - 47.

    Zusätzliche Informationen

  1857. Autor/innen: Yannick Wimmer, E360; Wolfgang Gös, E360; Al-Moatasem El-Sayed, E360; A. L. Shluger; Tibor Grasser, E360

    Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
    "On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
    Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 97 - 98.

  1858. Autor/innen: Yannick Wimmer, E360; S. E. Tyaginov, E360; Florian Rudolf, E360; Karl Rupp, E360; Markus Bina, E360; H. Enichlmair; J.M. Park; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
    "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; S. 58 - 62.

    Zusätzliche Informationen

  1859. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
    "Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
    Vortrag: SISPAD Workshop, Nürnberg, Germany; 05.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016).

  1860. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 297 - 300.

    Zusätzliche Informationen

  1861. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
    Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 9 - 12.

    Zusätzliche Informationen

  1862. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel MTJ-Based Shift Register for Non-Volatile Logic Applications";
    Vortrag: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in: "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), S. 36 - 37.

    Zusätzliche Informationen

  1863. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Non-Volatile Magnetic Flip Flop";
    Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 29.07.2013 - 02.08.2013; in: "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 S.

  1864. Autor/innen: Thomas Windbacher, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 368 - 371.

    Zusätzliche Informationen

  1865. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
    Vortrag: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in: "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), S. 456 - 457.

  1866. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "A Universal Nonvolatile Processing Environment";
    Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), S. 62.

  1867. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment";
    Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2017 - 11.07.2017; in: "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9; S. 142 - 146.

  1868. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 446 - 449.

    Zusätzliche Informationen

  1869. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
    Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 28.08.2016 - 01.09.2016; in: "Proceedings of SPIE Spintronics", (2016), S. 9931-93.

  1870. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Buffered Magnetic Logic Gate Grid";
    Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S.

  1871. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
    Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 25.05.2016 - 27.05.2016; in: "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 S.

  1872. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
    Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Las Vegas, USA (eingeladen); 16.11.2015 - 19.11.2015; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2015), S. 15 - 16.

  1873. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 30.11.2014 - 05.12.2014; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1; S. 62.

  1874. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate";
    Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. J3.

  1875. Autor/innen: Thomas Windbacher, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
    "The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
    Vortrag: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 16.09.2016; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; S. 311 - 314.

    Zusätzliche Informationen

  1876. Autor/innen: Thomas Windbacher, E360; B. Gunnar Malm; Viktor Sverdlov, E360; Mikael Östling; Siegfried Selberherr, E360

    T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr:
    "Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register";
    Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 43.

  1877. Autor/innen: Thomas Windbacher, E360; Dimitry Osintsev, E360; Alexander Makarov, E360; Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
    Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 193 - 194.

  1878. Autor/innen: Thomas Windbacher, E360; Dimitry Osintsev, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Fully Electrically Read- Write Magneto Logic Gates";
    Vortrag: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 07.10.2012 - 10.10.2012; in: "Book of Abstracts", (2012), 1 S.

  1879. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, V. Sverdlov, S. Selberherr:
    "Magnetic Nonvolatile Processing Environment";
    Vortrag: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia (eingeladen); 19.05.2016 - 20.05.2016; in: "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", SamGUPS, (2016), S. 42 - 43.

  1880. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, V. Sverdlov, S. Selberherr:
    "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
    Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 169 - 172.

    Zusätzliche Informationen

  1881. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Clemens Heitzinger, E360

    T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger:
    "A General Bottom-Up Modeling Approach for BioFETs";
    Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 29.09.2008 - 30.09.2008; in: "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008).

  1882. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Clemens Heitzinger, E360; Norbert Mauser; Ch. Ringhofer

    T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Simulation of Field-Effect Biosensors (BioFETs)";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 193 - 196.

    Zusätzliche Informationen

  1883. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Clemens Heitzinger, E360; Norbert Mauser; Ch. Ringhofer

    T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes";
    Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 27.07.2008 - 01.08.2008; in: "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7; S. 507 - 508.

  1884. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Clemens Heitzinger, E360; Norbert Mauser; Ch. Ringhofer

    T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Study of the Properties of Biotin-Streptavidin Sensitive Biofets";
    Vortrag: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 14.01.2009 - 17.01.2009; in: "Final Program and Book of Abstracts", (2009), S. 42.

  1885. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Clemens Heitzinger, E360; Norbert Mauser; Ch. Ringhofer

    T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
    "Study of the Properties of Biotin-Streptavidin Sensitive BioFETs";
    Vortrag: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 14.01.2009 - 17.01.2009; in: "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2; S. 24 - 30.

  1886. Autor/innen: Thomas Windbacher, E360; Oliver Triebl, E360; Dimitry Osintsev, E360; Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
    "Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
    Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 238 - 239.

  1887. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Johann Cervenka, E360; S Uppal; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr:
    "Monte Carlo Simulation of Boron Implantation into (100) Germanium";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 381 - 384.

    Zusätzliche Informationen

  1888. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, S. Selberherr:
    "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
    Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 03.10.2004 - 08.10.2004; in: "206th ECS Meeting", (2004), ISBN: 1-56677-420-9; S. 181 - 192.

    Zusätzliche Informationen

  1889. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, S. Selberherr:
    "Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
    Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 35 - 40.

  1890. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 191 - 194.

    Zusätzliche Informationen

  1891. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 169 - 172.

    Zusätzliche Informationen

  1892. Autor/innen: Robert Wittmann, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    R. Wittmann, A. Hössinger, S. Selberherr:
    "Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
    Vortrag: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; S. 159 - 163.

  1893. Autor/innen: Robert Wittmann, E360; H Puchner; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Wittmann, H. Puchner, H. Ceric, S. Selberherr:
    "Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9; S. 41 - 44.

  1894. Autor/innen: Robert Wittmann, E360; H Puchner; L Hinh; Hajdin Ceric, E360; Andreas Gehring, E360; Siegfried Selberherr, E360

    R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
    "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET";
    Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 17.10.2005 - 20.10.2005; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1; S. 99 - 102.

  1895. Autor/innen: Robert Wittmann, E360; Helmut Puchner, E360; L Hinh; Hajdin Ceric, E360; Andreas Gehring, E360; Siegfried Selberherr, E360

    R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
    "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology";
    Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 29 - 32.

  1896. Autor/innen: Robert Wittmann, E360; S Uppal; Andreas Hössinger, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
    "A Study of Boron Implantation into High Ge Content SiGe Alloys";
    Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1469, 1 S.

  1897. Autor/innen: J. Woerle; Vito Simonka, E360; E. Müller; Andreas Hössinger, Silvaco Europe L ...; H. Sigg; Siegfried Selberherr, E360; Josef Weinbub, E360; M. Camarda; Ulrike Grossner

    J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
    "Surface Morphology of 4H-SiC After Thermal Oxidation";
    Vortrag: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 02.09.2018 - 06.09.2018; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018).

  1898. Autor/innen: A. Wolf; Tibor Grasser, E360; Siegfried Selberherr, E360

    A. Wolf, T. Grasser, S. Selberherr:
    "Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT";
    Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 314 - 318.

  1899. Autor/innen: Stefanie Wolf, E360; Neophytos Neophytou, E360; Zlatan Stanojevic

    S. Wolf, N. Neophytou, Z. Stanojevic:
    "Monte Carlo Simulations Of Thermal Conductivity Nanoporous Si Membranes";
    Vortrag: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in: "Book of Abstracts", (2013), S. 1 - 4.

  1900. Autor/innen: Zhicheng Wu; J. Franco; Dieter Claes; Gerhard Rzepa, E360; Philippe J. Roussel; Nadine Collaert; Guido Groeseneken; D Linten; Tibor Grasser, E360; Ben Kaczer

    Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G Groeseneken, D. Linten, T. Grasser, B. Kaczer:
    "Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling";
    Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 7.

    Zusätzliche Informationen

  1901. Autor/innen: A. Yazdanpanah Goharrizi; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina:
    "Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons";
    Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S.

    Zusätzliche Informationen

  1902. Autor/innen: A. Yazdanpanah Goharrizi; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
    "A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes";
    Vortrag: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 17.11.2008 - 19.11.2008; in: "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), S. 66 - 67.

  1903. Autor/innen: Xanthippe Zianni; Neophytos Neophytou, E360; M. Ferri; Alberto Roncaglia; D. Narducci

    X. Zianni, N. Neophytou, M. Ferri, A. Roncaglia, D. Narducci:
    "Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress";
    Vortrag: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S.

  1904. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
    "Electromigration Analyses of Open TSVs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 244 - 247.

    Zusätzliche Informationen

  1905. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
    "Electromigration Induced Stress in Open TSVs";
    Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 142 - 145.

    Zusätzliche Informationen

  1906. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, S. Selberherr:
    "Stress Development and Void Evolution in Open TSVs";
    Vortrag: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in: "Abstracts", (2014), S. 38 - 39.

  1907. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, S. Selberherr:
    "Void Evolution in Open TSVs";
    Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 59.

  1908. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
    "Electromigration Induced Resistance Increase in Open TSVs";
    Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 249 - 252.

    Zusätzliche Informationen

  1909. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
    "Electromigration Reliability of Open TSV Structures";
    Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 317 - 320.

    Zusätzliche Informationen

  1910. Autor/innen: Wolfhard Zisser, E360; Hajdin Ceric, E360; Josef Weinbub, E360; Siegfried Selberherr, E360

    W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
    "Electromigration Reliability of Open TSV Structures";
    Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 48.


Vorträge und Posterpräsentationen (ohne Tagungsband-Eintrag)


  1. Autor/innen: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "On the Temperature Dependence of NBTI Recovery";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; 29.09.2008 - 02.10.2008.

  2. Autor/innen: Alexander Axelevitch; Vassil Palankovski, E360; Siegfried Selberherr, E360; G. Golan

    A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
    "Large Silicon Solar Cells of a Lateral Type";
    Poster: 2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium; 03.04.2012 - 05.04.2012.

  3. Autor/innen: Tesfaye Ayalew, E360; Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
    "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
    Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004.

    Zusätzliche Informationen

  4. Autor/innen: Tesfaye Ayalew, E360; Andreas Gehring, E360; Jong Mun Park, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
    "Improving SiC Lateral DMOSFET Reliability under High Field Stress";
    Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003.

  5. Autor/innen: Mauro Ballicchia, E360; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, M. Nedjalkov, J. Weinbub:
    "Monte Carlo Approach for Solving Integral Equations: From Classical-Boltzmann to Quantum-Wigner Particles";
    Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain (eingeladen); 05.09.2022.

    Zusätzliche Informationen

  6. Autor/innen: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
    Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 07.10.2002 - 11.10.2002.

  7. Autor/innen: Hajdin Ceric, E360; Houman Zahedmanesh; Kristof Croes

    H. Ceric, H. Zahedmanesh, K. Croes:
    "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 23.09.2019 - 26.09.2019.

  8. Autor/innen: Johann Cervenka, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    J. Cervenka, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Sacrificial Etching";
    Vortrag: SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain; 02.05.2007 - 04.05.2007.

  9. Autor/innen: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov:
    "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software";
    Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019.

  10. Autor/in: Lidija Filipovic, E360

    L. Filipovic:
    "A Broadly-Applicable Ensemble Monte Carlo Framework";
    Vortrag: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain (eingeladen); 05.09.2022.

  11. Autor/innen: Lado Filipovic, E360; Markus Kampl, E360; Theresia Knobloch, E360; Gerhard Rzepa, E360; Josef Weinbub, E360

    L. Filipovic, M. Kampl, T. Knobloch, G. Rzepa, J. Weinbub:
    "Ihr Smartphone - Ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik (mit Virtual Reality)";
    Vortrag: Lange Nacht der Forschung 2018, Wien; 13.04.2018.

  12. Autor/innen: Simone Fiorentini, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
    "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells";
    Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019.

  13. Autor/innen: Samuel Foster; D. Chakraborty; Michael Thesberg, E360; Hans Kosina, E360; Neophytos Neophytou

    S. Foster, D. Chakraborty, M. Thesberg, H. Kosina, N. Neophytou:
    "Monte Carlo Simulations for Extracting the Power Factor in 1D Systems";
    Vortrag: EPRSC Thermoelectric Network Meeting, Manchester, UK; 14.02.2017 - 15.02.2017.

  14. Autor/innen: Samuel Foster; Michael Thesberg, E360; Vassileios Vargiamidis; Neophytos Neophytou

    S. Foster, M. Thesberg, V. Vargiamidis, N. Neophytou:
    "Electronic Transport Simulations for Advanced Thermoelectric Materials";
    Poster: ​​​​Thermoelectric Network UK Meeting, Edinburgh, UK; 14.02.2018.

  15. Autor/innen: J. Franco; Ben Kaczer; J. Mitard; G. Eneman; Ph. J. Roussel; F. Crupi; Tibor Grasser, E360; L. Witters; T.Y. Hoffmann; G. Groeseneken

    J. Franco, B. Kaczer, J. Mitard, G. Eneman, Ph. J. Roussel, F. Crupi, T. Grasser, L. Witters, T. Y. Hoffmann, G. Groeseneken:
    "Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs";
    Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010.

  16. Autor/innen: J. Franco; Ben Kaczer; A. Stesmans; V. Afanas´Ev; K. Martens; M. Aoulaiche; Tibor Grasser, E360; J. Mitard; G. Groeseneken

    J. Franco, B. Kaczer, A. Stesmans, V. Afanas´Ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken:
    "Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs";
    Vortrag: 40th Semiconductor Interface Specialists Conference (SISC), Washington; 03.12.2009 - 05.12.2009.

  17. Autor/innen: Andreas Gehring, E360; F. Jimenez-Molinos; Hans Kosina, E360; A. Palma; Francisco Gamiz; Siegfried Selberherr, E360

    A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
    "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
    Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003.

  18. Autor/innen: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004.

    Zusätzliche Informationen

  19. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
    Vortrag: Kyoto Institute of Technology, Kyoto, Japan (eingeladen); 24.08.2015.

  20. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
    Vortrag: D2T Symposium, Tokyo, Japan (eingeladen); 21.08.2015.

  21. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Aging in CMOS Devices: From Microscopic Physics to Compact Models";
    Vortrag: The 2012 Forum on Specification & Design Languages, Vienna, Austria (eingeladen); 18.09.2012 - 20.09.2012.

  22. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Bias Temperature Instability in CMOS Nanodevices";
    Vortrag: SINANO Summer School, Bertinoro, Italy (eingeladen); 25.08.2014 - 29.08.2014.

  23. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
    Vortrag: Workshop "Wafer-scale Integration of 2D materials", Aachen, Germany (eingeladen); 13.11.2019.

  24. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
    Vortrag: IEEE EDS Distinguished Lecture at RWTH Aachen, Aachen, Germany (eingeladen); 26.11.2019.

  25. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Cause, Detection, and Impact of Charge Trapping on Aging";
    Vortrag: VLSI Symposium Short Course, Kyoto, Japan; 14.06.2011 - 18.06.2011.

  26. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Characterization and Modeling of Charge Trapping and Hot Carrier Degradation";
    Vortrag: IEEE EDS Distinguished Lecture, Agrate Brianza, Italy (eingeladen); 11.12.2014.

  27. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Characterization and Modeling of Charge Trapping in CMOS Transistors";
    Vortrag: International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy (eingeladen); 02.10.2014 - 03.10.2014.

  28. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Characterization and Modeling of the Negative Bias Temperature Instability";
    Vortrag: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", Duisburg (eingeladen); 18.03.2010 - 19.03.2010.

  29. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment";
    Vortrag: CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland (eingeladen); 08.04.2015 - 10.04.2015.

  30. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Charge Trapping and Time-dependent Variability in CMOS Transistors";
    Vortrag: IEEE EDS Distinguished Lecture, Stuttgart,Germany (eingeladen); 24.01.2017.

  31. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Charge Trapping and Time-dependent Variability in Low-Voltage MOS Transistors";
    Vortrag: Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan (eingeladen); 28.02.2017.

  32. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling";
    Vortrag: IEEE EDS Distinguished Lecture, Aachen, Germany (eingeladen); 23.11.2017.

  33. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation";
    Vortrag: 3rd SINANO Device Modeling Summer School, Bertinoro, Italy; 01.09.2008 - 05.09.2008.

  34. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Higher-Order Moment Models for Engineering Applications";
    Vortrag: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano (eingeladen); 17.02.2005 - 18.02.2005.

  35. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Mixed Mode Device/Circuit Simulation";
    Vortrag: MOS-AK ESSDERC Companion Workshop, Grenoble (eingeladen); 16.09.2005.

  36. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Modeling of Device Reliability";
    Vortrag: Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland; 12.09.2011 - 16.09.2011.

  37. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Multiscale Reliability Modeling";
    Vortrag: IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain (eingeladen); 25.09.2018.

  38. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Oxide Defects in MOS Transistors: Characterization and Modeling";
    Vortrag: IEEE EDS Distinguished Lecture, Aranjuez, Spain (eingeladen); 11.02.2015.

  39. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Oxide Defects in MOS Transistors: Characterization and Modeling";
    Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Kinsale, Ireland (eingeladen); 09.06.2015 - 11.06.2015.

  40. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Oxide Defects: From Microscopic Physics to Compact Models";
    Vortrag: SISPAD Workshop, Osaka, JAPAN; 08.09.2011 - 10.09.2011.

  41. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Physical Mechanisms and Modeling of the Bias Temperature Instability";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 05.10.2009 - 09.10.2009.

  42. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Recent Developments in Device Reliability Modeling";
    Vortrag: MOS-AK ESSDERC Companion Workshop, Seville (eingeladen); 17.09.2010.

  43. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions";
    Vortrag: IEEE EDS Distinguished Lecture, Hiroshima, Japan (eingeladen); 26.08.2015.

  44. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Simulation of SOI-Devices";
    Vortrag: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", München (eingeladen); 17.05.2001 - 18.05.2001.

  45. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Statistical Reliability in Nanoscale Devices";
    Vortrag: SISPAD Workshop, Bologna (eingeladen); 08.09.2010.

  46. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Transport Modeling in Modern Semiconductor Devices";
    Vortrag: CoMoN Workshop 2010, Tarragona (eingeladen); 30.06.2010 - 01.07.2010.

  47. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
    Vortrag: International Conference on Insulating Films on Semiconductors (INFOS), Cambridge (eingeladen); 29.06.2009 - 01.07.2009.

  48. Autor/innen: Tibor Grasser, E360; H. Reisinger; Paul-Jürgen Wagner, E360; Wolfgang Gös, E360; Franz Schanovsky, E360; Ben Kaczer

    T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, B. Kaczer:
    "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta (eingeladen); 11.10.2010.

  49. Autor/innen: Tibor Grasser, E360; Martin Vasicek, E360; Martin Wagner, E360

    T. Grasser, M. Vasicek, M. Wagner:
    "Higher-Order Moment Models for Engineering Applications";
    Vortrag: Equadiff, Wien; 05.08.2007 - 11.08.2007.

  50. Autor/in: Predrag Habas, E360

    P. Habas:
    "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs";
    Vortrag: International Conference on Insulating Films on Semiconductors (INFOS), Villard-de-Lans; 07.06.1995 - 10.06.1995.

  51. Autor/innen: Andreas Harrer, E362; Peter Reininger, E362; Roman Gansch, E362; Benedikt Schwarz, E362; Donald MacFarland, E362; Tobias Zederbauer, E362; Hermann Detz, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    A. Harrer, P. Reininger, R. Gansch, B. Schwarz, D. MacFarland, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "Quantum Cascade Detectors for Sensing Applications";
    Vortrag: ICAVS8, Wien; 12.07.2015 - 17.07.2015.

  52. Autor/innen: Andreas Harrer, E362; Peter Reininger, E362; Benedikt Schwarz, E362; Roman Gansch, E362; Stefan Kalchmair, E362; Hermann Detz, E362; Tobias Zederbauer, E362; Donald MacFarland, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    A. Harrer, P. Reininger, B. Schwarz, R. Gansch, S. Kalchmair, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "Advances in Quantum Cascade Detector Design";
    Vortrag: 4th International Nanophotonics Meeting 2014, Igls; 23.10.2014 - 25.10.2014.

  53. Autor/innen: Andreas Harrer, E362; Benedikt Schwarz, E362; Peter Reininger, E362; Roman Gansch, E362; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Stefan Kalchmair, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Gottfried Strasser, E362

    A. Harrer, B. Schwarz, P. Reininger, R. Gansch, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
    "Intersubband Detectors";
    Vortrag: 3rd International Nanophotonics Meeting 2013, Salzburg; 01.09.2013 - 03.09.2013.

  54. Autor/innen: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
    Vortrag: SPIE Design, Modeling, and Simulation in Microelectronics, Singapur; 28.11.2000 - 30.11.2000.

  55. Autor/innen: Stefan Holzer, E360; Christian Hollauer, E360; Hajdin Ceric, E360; Stephan Wagner, E360; Erasmus Langer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
    "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
    Vortrag: SPIE VLSI Circuits and Systems, Sevilla, Spain; 09.05.2005 - 11.05.2005.

  56. Autor/in: Yury Illarionov, E360

    Yu. Illarionov:
    "On the Way to Commercial 2D Electronics...";
    Vortrag: 2nd Zhejiang Sci-Tech University Forum for International Young Scholars, Hangzhou, China (eingeladen); 25.11.2018 - 27.11.2018.

  57. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; M. I. Vexler; N. S. Sokolov; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. I. Vexler, N. S. Sokolov, T. Müller, T. Grasser:
    "Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator";
    Vortrag: IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden (eingeladen); 27.10.2019 - 30.10.2019.

  58. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; M.I. Vexler; N. S. Sokolov; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. Vexler, N. S. Sokolov, T. Müller, T. Grasser:
    "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
    Vortrag: Graphene Week, Helsinki, Finland (eingeladen); 23.09.2019 - 27.09.2019.

  59. Autor/innen: Yury Illarionov, E360; A. G. Banshchikov; N. S. Sokolov; V. V. Fedorov; S. M. Suturin; M. I. Vexler; Theresia Knobloch, E360; Dmitry K. Polyushkin, E387-01; T. Mueller; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, N. S. Sokolov, V. V. Fedorov, S. M. Suturin, M. I. Vexler, T. Knobloch, D.K Polyushkin, T. Mueller, T. Grasser:
    "Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials";
    Vortrag: Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia (eingeladen); 08.04.2021.

  60. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, T. Grasser:
    "Crystalline Insulators for Scalable 2D Nanoelectronics";
    Vortrag: International Conference on Insulating Films on Semiconductors (INFOS), Rende (CS), Italy (eingeladen); 29.06.2021 - 02.07.2021.

  61. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; B. Uzlu; N. S. Sokolov; Max C Lemme, Aachen University; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, B. Uzlu, N. S. Sokolov, M. Lemme, T. Grasser:
    "Highly stable GFETs with 2nm crystalline CaF2 insulators";
    Vortrag: 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia; 09.10.2022 - 14.10.2022.

  62. Autor/innen: Yury Illarionov, E360; Theresia Knobloch, E360; Michael Waltl, E360; Q Smets; L Panarella; Ben Kaczer; Tom Schram; S Brems; D. Cott; Inge Asselberghs; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser:
    "Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs";
    Vortrag: Graphne 2022, Aachen, Germany; 05.07.2022 - 08.07.2022.

  63. Autor/innen: Yury Illarionov, E360; Bernhard Stampfer, E360; F Zhang; Theresia Knobloch, E360; P. Wu; Michael Waltl, E360; Alexander Grill, E360; J Appenzeller; Tibor Grasser, E360

    Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
    "Characterization of Single Defects: from Si to MoS2 FETs";
    Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 29.05.2018 - 02.06.2018.

  64. Autor/innen: Yury Illarionov, E360; Michael Waltl, E360; Theresia Knobloch, E360; Gerhard Rzepa, E360; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser:
    "Reliability Perspective of 2D Electronics";
    Vortrag: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 25.04.2017 - 30.04.2017.

  65. Autor/innen: Goran Kaiblinger-Grujin, E360; Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, C. Köpf, H. Kosina, S. Selberherr:
    "Dependence of Electron Mobility on Impurities in Compound Semiconductors";
    Vortrag: III-V Semiconductor Device Simulation Workshop, Turin; 16.10.1997 - 17.10.1997.

  66. Autor/innen: Yusuf Kinkhabwala; Viktor Sverdlov, E360; Konstantin Likharev

    Y. Kinkhabwala, V. Sverdlov, K. Likharev:
    "Quasi-continuous Charge Transfer via 2D Hopping";
    Vortrag: APS March Meeting, Los Angeles; 21.03.2005 - 25.03.2005.

  67. Autor/innen: Matthew Knepley; Karl Rupp, E360; Andy Terrel

    M. Knepley, K. Rupp, A. Terrel:
    "FEM Integration with Quadrature on the GPU";
    Vortrag: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015.

  68. Autor/in: Theresia Knobloch, E360

    T. Knobloch:
    "Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling";
    Vortrag: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; 05.09.2022.

  69. Autor/innen: Theresia Knobloch, E360; Tibor Grasser, E360

    T. Knobloch, T. Grasser:
    "Scalable and Reliable Gate Insulators for 2D Material-Based FETs";
    Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), Puebla, Mexico (eingeladen); 04.07.2022 - 06.07.2022.

  70. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Blessing or curse: Dissipative quantum transport in nano-scale devices";
    Vortrag: Workshop "From Atom to Transistor" at the 45th European Solid-State Device Research Conference (ESSDERC), Graz (eingeladen); 18.09.2015.

  71. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Numerical Simulation of Quantum Devices Utilizing the Wigner Function Formalism";
    Vortrag: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Wien; 16.02.2006 - 17.02.2006.

  72. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Recent Developments in Semiclassical Transport: Backward Monte Carlo and Electron-Electron Scattering";
    Vortrag: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; 05.09.2022.

  73. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Semiconductor Device Modeling at the Nanoscale";
    Vortrag: 42nd International Conference on Nano Engineering, MNE 2016, Wien (eingeladen); 19.09.2016 - 23.09.2016.

  74. Autor/in: Hans Kosina, E360

    H. Kosina:
    "The Wigner Equation for Nanoscale Device Simulation";
    Vortrag: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching (eingeladen); 04.11.2004 - 05.11.2004.

    Zusätzliche Informationen

  75. Autor/innen: Hans Kosina, E360; Mihail Nedjalkov, E360

    H. Kosina, M. Nedjalkov:
    "The Wigner Equation for Quantum Device Modeling";
    Vortrag: Workshop on Quantum and Many-Body Effects in Nanoscale Devices, Arizona State University (eingeladen); 24.10.2003 - 25.10.2003.

  76. Autor/innen: Hans Kosina, E360; Viktor Sverdlov, E360

    H. Kosina, V. Sverdlov:
    "Impact of Strain and Defects on CMOS Process and Device Performance";
    Vortrag: 15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece (eingeladen); 20.06.2007 - 23.06.2007.

  77. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Fundamentals about Surface Acoustic Wave Propagation";
    Vortrag: Symposium on Coupled Fields - Theory and Applications, Zakopane (eingeladen); 07.11.1989 - 10.11.1989.

  78. Autor/innen: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Micro and Macroscopic Modeling of Charge Flows in Molecularly Disordered Organic Semiconductors";
    Vortrag: SISPAD 2007 Companion Workshop 'Organic Electronics', Wien; 28.09.2007.

  79. Autor/in: Philipp Lindorfer, E360

    P. Lindorfer:
    "An Ideality Factor Formulation of Schottky Boundary Conditions in Numerical Device Simulation";
    Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Grönenbach; 14.05.1991 - 17.05.1991.

  80. Autor/innen: Alois Lugstein, E362; Mathias Steinmair; Andreas Steiger-Thirsfeld, E057-02; Hans Kosina, E360; Emmerich Bertagnolli, E362

    A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
    "Tuning the Electronic Properties of Ultra-strained Silicon Nanowires";
    Vortrag: MRS Fall Meeting, Boston, USA; 29.11.2010 - 03.12.2010.

  81. Autor/innen: Sayani Majumdar; Miika Soikkeli; Wonjae Kim; Yury Illarionov, E360; Stefan Wachter, E387-01; Dmitry K. Polyushkin, E387-01; Sanna Arpiainen; Mika Prunnila

    S. Majumdar, M. Soikkeli, W. Kim, Yu. Illarionov, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila:
    "Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform";
    Poster: Graphene Week, Helsinki, Finland; 23.09.2019 - 27.09.2019.

  82. Autor/in: Paul Manstetten, E360

    P. Manstetten:
    "Performance Improvements For Advanced Physical Etching And Deposition In Memory Technologies";
    Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA (eingeladen); 09.10.2018.

  83. Autor/innen: K. Martens; Ben Kaczer; Tibor Grasser, E360; B. De Jaeger; M. Meuris; G. Groeseneken; H.E. Maes

    K. Martens, B. Kaczer, T. Grasser, B. De Jaeger, M. Meuris, G. Groeseneken, H.E. Maes:
    "Charge Pumping Charcaterization of Germanium MOSFETs";
    Vortrag: Semiconductor Interface Specialists Conference (SISC), Arlington; 06.12.2007 - 08.12.2007.

  84. Autor/innen: Goran Milovanovic, E360; Oskar Baumgartner, E360; Michele Nobile, E362; Hermann Detz, E362; Aaron Maxwell Andrews, E362; Gottfried Strasser, E362; Hans Kosina, E360

    G. Milovanovic, O. Baumgartner, M. Nobile, H. Detz, A. M. Andrews, G. Strasser, H. Kosina:
    "Monte Carlo Simulation of an Al-free Quantum Cascade Laser";
    Vortrag: MIRTHE-IROn-SensorCAT virtual conference, Princenton; 19.01.2011 - 20.01.2011.

  85. Autor/innen: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, O. Baumgartner, H. Kosina:
    "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
    Poster: The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA; 15.09.2013 - 20.09.2013.

  86. Autor/in: Gerd Nanz, E360

    G. Nanz:
    "Selbst-adaptive Finite-Differenzen-Gitter in der Halbleiterbauelementesimulation";
    Vortrag: GAMM 90, Hannover; 1990.

  87. Autor/in: Gerd Nanz, E360

    G. Nanz:
    "Zweidimensionale Simulation allg. Halbleiterbauelemente";
    Vortrag: 2nd Workshop Device Simulation, Gesellschaft für Mathematik und Datenverarbeitung, St. Augustin; 15.11.1989 - 16.11.1989.

  88. Autor/innen: Mihail Nedjalkov, E360; Paul Ellinghaus, E360; Josef Weinbub, E360; Siegfried Selberherr, E360; T. Sadi; A Asenov; L. Wang; S. M. Amoroso; Ewan Towie

    M. Nedjalkov, P. Ellinghaus, J. Weinbub, S. Selberherr, T. Sadi, A. Asenov, L. Wang, S. Amoroso, E. Towie:
    "Physical Models for Variation-Aware Device Simulation";
    Vortrag: Workshop on Variability-Aware Design Technology Co-Optimization, Nuremberg, Germany (eingeladen); 05.09.2016.

  89. Autor/innen: Mihail Nedjalkov, E360; Josef Weinbub, E360; Paul Ellinghaus, E360; Siegfried Selberherr, E360

    M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
    "Wigner Signed Particles - An Intuitive Alternative of Particle-Wave Duality";
    Vortrag: SEMODAY Meeting, Florence, Italy (eingeladen); 16.10.2016 - 17.10.2016.

  90. Autor/in: Neophytos Neophytou, E360

    N. Neophytou:
    "Low Dimensional Si Nanostructures for Efficient Thermoelectric Energy Conversion and Generation";
    Vortrag: Workshop on Nanostructured Materials & Devices (NANOMED), Nicosia, Cyprus (eingeladen); 17.10.2012.

  91. Autor/innen: Neophytos Neophytou; Samuel Foster; Michael Thesberg, E360; Hans Kosina, E360

    N. Neophytou, S. Foster, M. Thesberg, H. Kosina:
    "Electronic Transport Simulations in Nanocomposites - Exploring the Features that Optimize the Thermoelectric Power Factor";
    Vortrag: E-MRS Spring Meeting, Strasburg, France; 22.05.2017 - 26.05.2017.

  92. Autor/innen: Neophytos Neophytou; Samuel Foster; Vassileios Vargiamidis; Michael Thesberg, E360

    N. Neophytou, S. Foster, V. Vargiamidis, M. Thesberg:
    "Electronic Transport Simulations in Materials with Embedded Nano-Inclusions for Enhanced Thermoelectric Power Factors";
    Vortrag: Annual March Meeting of the American Physical Society, Los Angeles, USA; 05.03.2018 - 09.03.2018.

  93. Autor/innen: Neophytos Neophytou; Michael Thesberg, E360

    N. Neophytou, M. Thesberg:
    "Electronic Transport Simulations in Nano-Crystalline Materials for Enhanced Thermoelectric Power Factors";
    Vortrag: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017.

  94. Autor/innen: Neophytos Neophytou; Michael Thesberg, E360

    N. Neophytou, M. Thesberg:
    "Electronic Transport Simulations in Nanostructured Materials for Large Thermoelectric Power Factors";
    Vortrag: European Congress and Exhibition on Advanced Materials and Processes (EUROMAT), Thessaloniki, Greece; 18.09.2017 - 22.09.2017.

  95. Autor/innen: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
    Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011.

  96. Autor/innen: C Ostermaier; Peter Willibald Lagger; G. Prechtl; Alexander Grill, E360; Tibor Grasser, E360; Dionyz Pogany, E362

    C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
    "The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures";
    Vortrag: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 02.12.2015 - 05.12.2015.

  97. Autor/innen: C Ostermaier; Peter Willibald Lagger; Maria Reiner; Alexander Grill; Roberta Stradiotto, KAI GmbH; Gregor Pobegen; Tibor Grasser, E360; R Pietschnig; Dionyz Pogany, E362

    C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany:
    "Review of bias-temperature instabilities at the III-N/dielectric interface";
    Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 25.09.2017 - 28.09.2017.

  98. Autor/in: Vassil Palankovski, E360

    V. Palankovski:
    "Advanced Device Modeling for High Frequency Applications";
    Vortrag: Compact Modeling for RF/Microwave Applications (CMRF), Maastricht (eingeladen); 11.10.2006.

  99. Autor/in: Vassil Palankovski, E360

    V. Palankovski:
    "Analysis and Simulation of Semicondutor Devices";
    Vortrag: 3er. Congreso Nacional de Mecatronica, Zempoala, Mexico (eingeladen); 25.11.2009 - 27.11.2009.

  100. Autor/in: Vassil Palankovski, E360

    V. Palankovski:
    "Photovoltaic and Thermoelectric Devices for Renewable Energy Harnessing";
    Vortrag: Electronica, Sofia, Bulgaria (eingeladen); 14.06.2012 - 15.06.2012.

  101. Autor/in: Vassil Palankovski, E360

    V. Palankovski:
    "Simulation von SiGe Bauelementen";
    Vortrag: GMM Workshop, München (eingeladen); 24.04.2002 - 25.04.2002.

  102. Autor/innen: Vassil Palankovski, E360; Martin Rottinger, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    V. Palankovski, M. Rottinger, T. Simlinger, S. Selberherr:
    "Two-Dimensional Simulation and Comparison of Si-based and GaAs-based HBTs";
    Vortrag: III-V Semiconductor Device Simulation Workshop, Turin; 16.10.1997 - 17.10.1997.

  103. Autor/in: Mahdi Pourfath, E360

    M. Pourfath:
    "Quantum Transport in Graphene-Based Devices: A Computational Study";
    Vortrag: 17th Annual IASBS Meeting on Condensed Matter Physics, Zanjan, Iran (eingeladen); 26.05.2011 - 27.05.2011.

  104. Autor/innen: Peter Reininger, E362; Benedikt Schwarz, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Gottfried Strasser, E362

    P. Reininger, B. Schwarz, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
    "Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser";
    Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012.

  105. Autor/innen: Peter Reininger, E362; Benedikt Schwarz, E362; Stefan Kalchmair, E362; Roman Gansch, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Werner Schrenk, E362; Gottfried Strasser, E362

    P. Reininger, B. Schwarz, S. Kalchmair, R. Gansch, O. Baumgartner, Z. Stanojevic, H. Kosina, W. Schrenk, G. Strasser:
    "Simulation of a dual wavelength quantum cascade laser in a photonic crystal cavity";
    Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012.

  106. Autor/innen: Peter Reininger, E362; Benedikt Schwarz, E362; A Wirthmüller; Andreas Harrer, E362; Oskar Baumgartner, E360; Hermann Detz, E362; Tobias Zederbauer, E362; Donald MacFarland, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Lubos Hvozdara; Hans Kosina, E360; Gottfried Strasser, E362

    P. Reininger, B. Schwarz, A. Wirthmüller, A. Harrer, O. Baumgartner, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, L. Hvozdara, H. Kosina, G. Strasser:
    "Towards higher temperature operation of quantum cascade detectors";
    Vortrag: ITQW, New York, USA; 15.09.2013 - 20.09.2013.

  107. Autor/in: Karl Rupp, E360

    K. Rupp:
    "PETSc on GPUs and MIC: Current Status and Future Directions";
    Vortrag: Workshop: Celebrating 20 Years of Computational Science with PETSc Tutorial and Conference, Argonne National Laboratory, IL, USA; 15.06.2015 - 18.06.2015.

  108. Autor/in: Karl Rupp, E360

    K. Rupp:
    "Semiconductor Device Simulation Approaches for Massively Parallel Computing Architectures";
    Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017.

  109. Autor/in: Karl Rupp, E360

    K. Rupp:
    "Vendor-Optimized vs. Portable Performance: Approaches to Get Both";
    Vortrag: SIAM Conference on Parallel Processing for Scientific Computing (PP), Seattle, WA, USA; 12.02.2020 - 15.02.2020.

  110. Autor/in: Karl Rupp, E360

    K. Rupp:
    "ViennaCL: GPU-accelerated Linear Algebra at the Convenience of the C++ Boost Libraries";
    Vortrag: SIAM Conference on Computational Science and Engineering, Boston, USA; 25.02.2013 - 01.03.2013.

  111. Autor/innen: Karl Rupp, E360; Markus Bina, E360; Andreas Morhammer, E360; Tibor Grasser, E360; Ansgar Jüngel, E101-01

    K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel:
    "ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method";
    Vortrag: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany (eingeladen); 11.03.2015 - 13.03.2015.

  112. Autor/innen: Karl Rupp, E360; Hajdin Ceric, E360

    K. Rupp, H. Ceric:
    "Analytical and Numerical Investigation of the Segregation Problem";
    Vortrag: 4th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo; 20.06.2010 - 26.06.2010.

  113. Autor/innen: Karl Rupp, E360; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, A. Jüngel, T. Grasser:
    "A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC";
    Vortrag: Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA; 22.03.2015 - 27.03.2015.

  114. Autor/innen: Karl Rupp, E360; Philippe Tillet

    K. Rupp, Ph. Tillet:
    "Performance-portable kernels in OpenCL: Lessons learned";
    Vortrag: BLIS Retreat, Austin, USA (eingeladen); 05.09.2013 - 06.09.2013.

  115. Autor/innen: Karl Rupp, E360; Philippe Tillet; Toby St Clere Smithe; Namik Karovic; Josef Weinbub, E360; Florian Rudolf, E360

    K. Rupp, Ph. Tillet, T. St Clere Smithe, N. Karovic, J. Weinbub, F. Rudolf:
    "ViennaCL - Fast Linear Algebra for Multi and Many-Core Architectures";
    Poster: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015.

  116. Autor/innen: Karl Rupp, E360; Josef Weinbub, E360; Florian Rudolf, E360

    K. Rupp, J. Weinbub, F. Rudolf:
    "Highly Productive Application Development with ViennaCL for Accelerators";
    Poster: AGU Fall Meeting, San Francisco, USA (eingeladen); 03.12.2012 - 07.12.2012.

  117. Autor/innen: Franz Schanovsky, E360; Tibor Grasser, E360

    F. Schanovsky, T. Grasser:
    "Bias Temperature Instabilities in highly-scaled MOSFETs";
    Vortrag: 2012 CMOS Emerging Technologies, Vancouver, BC Canada (eingeladen); 18.07.2012 - 21.07.2012.

  118. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
    "A mid-infrared dual wavelenght quantum cascade structure designed for both emission and detection";
    Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012.

  119. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
    "Dual wavelength quantum cascade structure that can act both as laser and detector";
    Vortrag: MIRTHE-IROn-SensorCAT virtual conference 2012, Princeton; 26.06.2012 - 27.06.2012.

  120. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
    "Dual-color quantum cascade structure for coherent emission and detection";
    Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012.

  121. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Oskar Baumgartner, E360; Zlatan Stanojevic; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
    "Optimization of intersubband devices for dual-color emission, absorption and detection";
    Vortrag: ÖPG-Jahrestagung, Graz; 18.09.2012 - 21.09.2012.

  122. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Oskar Baumgartner, E360; Tobias Zederbauer, E362; Hermann Detz, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, O. Baumgartner, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, H. Kosina, G. Strasser:
    "Towards Mid-Infrared On-Chip Sensing utilizing a bi-functional Quantum Cascade Laser/Detector";
    Vortrag: Conference on Electronic Properties of Two-Dimensional Systems / Modulated Semiconductor Structures (EP2Ds-MSS), Wroclaw, Polen; 01.07.2013 - 05.07.2013.

  123. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Hermann Detz, E362; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "Same-Frequency Detector and Laser Utilizing Bi-Functional Quantum Cascade Active Regions";
    Vortrag: SPIE Photonics West, San Francisco, CA, USA; 02.02.2013 - 07.02.2013.

  124. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Daniela Ristanic, E362; Oskar Baumgartner, E360; Hermann Detz, E362; Tobias Zederbauer, E362; Donald MacFarland, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, D. Ristanic, O. Baumgartner, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, H. Kosina, G. Strasser:
    "On-Chip mid-infrared light generation and detection";
    Vortrag: ITQW, New York, USA (eingeladen); 15.09.2013 - 20.09.2013.

  125. Autor/innen: Benedikt Schwarz, E362; Peter Reininger, E362; Werner Schrenk, E362; Hermann Detz, E362; Oskar Baumgartner, E360; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, W. Schrenk, H. Detz, O. Baumgartner, T. Zederbauer, A. M. Andrews, H. Kosina, G. Strasser:
    "Monolithically integrated quantum cascade laser and detector";
    Vortrag: CLEO Europe 2013, München, Deutschland; 12.05.2013 - 16.05.2013.

  126. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "About Models and Simulation of Nano-Scale Devices";
    Vortrag: IEEE EDS Distinguished Lecture, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Mexico City, Mexico (eingeladen); 25.08.2006.

  127. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "About Voids in Copper Interconnects";
    Vortrag: IEEE EDS Distinguished Lecture, Zhejiang University, Hangzhou, China (eingeladen); 28.10.2014.

  128. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Analysis of High Speed Heterostructure Devices";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, University of Nis, Nis, Serbia (eingeladen); 16.05.2004.

  129. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Challenges of the Nanoscale Era";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Hotel Serra Azul, Gramado, Brasil (eingeladen); 01.09.2008.

  130. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "CMOS-Compatible Spintronic Devices";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Universidade Salvador, Salvador, Brasil (eingeladen); 01.09.2015.

  131. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Current Transport in Upcoming Microelectronic Devices";
    Vortrag: IEEE EDS Distinguished Lecture, Universidade Federal de Santa Catarina, Florianopolis, Brasil (eingeladen); 22.03.2005.

  132. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Gate Currents in Small MOSFETs";
    Vortrag: IEEE EDS Distinguished Lecture, University of Sao Paulo, Sao Paulo, Brasil (eingeladen); 06.04.2004.

  133. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Integrated Gas Sensors for Wearable Electronics";
    Vortrag: IEEE EDS Distinguished Lecture, The Hong Kong Polytechnic University, Hong Kong (eingeladen); 12.04.2017.

  134. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Microeletronics Modeling";
    Vortrag: IEEE EDS Distinguished Lecture, Ss.Cyril and Methodius University in Skopje, Skopje, Mazedonien (eingeladen); 14.09.2007.

  135. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Modeling Floating Body Z-RAM Storage Cells";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, University of Nis, Nis, Serbia (eingeladen); 16.05.2010.

  136. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Modeling High Speed Semiconductor Devices of Modern Communication Systems";
    Vortrag: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil (eingeladen); 04.02.2003.

  137. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Modeling Solar Cells";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Technische Universität Wien (eingeladen); 01.10.2010.

  138. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Modeling Spin-Based Electronic Devices";
    Vortrag: IEEE EDS Distinguished Lecture, Zhejiang University, Hangzhou, China (eingeladen); 28.10.2014.

  139. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Modeling Spin-Based Electronic Devices";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Serbian Academy of Sciences and Arts, Belgrade, Serbia (eingeladen); 12.05.2014.

  140. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Past and Future of Microelectronics Technology";
    Vortrag: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil (eingeladen); 04.02.2003.

  141. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process Modeling";
    Vortrag: Microcircuit Engineering Conference, Wien (eingeladen); 20.09.1988 - 22.09.1988.

  142. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Process Simulation for Modern Microelectronics Technologies";
    Vortrag: IEEE EDS Distinguished Lecture, University of Sao Paulo, Sao Paulo, Brasil (eingeladen); 13.02.2008.

  143. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Recent Advances in Transport Modeling for Miniaturized CMOS Devices";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba (eingeladen); 17.04.2002.

  144. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Recent Developments in Advanced Memory Modeling";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, University of Nis, Nis, Serbia (eingeladen); 13.05.2012.

  145. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Strain Engineering for Nanoscale CMOS Transistors";
    Vortrag: IEEE EDS Distinguished Lecture, Pontifical Catholic University of Rio de Janeiro, Rio de Janeiro, Brasil (eingeladen); 06.02.2007.

  146. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Strain Engineering for Nanoscale CMOS Transistors";
    Vortrag: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil (eingeladen); 08.02.2007.

  147. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Strain Engineering in CMOS Devices";
    Vortrag: IEEE EDS Distinguished Lecture, University of Sao Paulo, Sao Paulo, Brasil (eingeladen); 04.02.2009.

  148. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The Evolution and Potential Future of Microelectronics";
    Vortrag: IEEE EDS Distinguished Lecture, City University of Hong Kong, Hong Kong (eingeladen); 31.03.2015.

  149. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The Evolution and Potential Future of Microelectronics";
    Vortrag: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil (eingeladen); 28.08.2015.

  150. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The Evolution and Potential Future of Microelectronics";
    Vortrag: IEEE EDS Distinguished Lecture, The Hong Kong Polytechnic University, Hong Kong (eingeladen); 12.04.2017.

  151. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "The State of the Art in Technology Computer-Aided Design";
    Vortrag: Sematech Meeting on Microelectronics, Boston (eingeladen); 10.09.1997.

  152. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Transport Modeling for Nanoscale Semiconductor Devices";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Tianjin University, Tianjin, China (eingeladen); 16.11.2011.

  153. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Transport Modeling for Nanoscale Semiconductor Devices";
    Vortrag: IEEE EDS Mini-Colloquium Distinguished Lecture, Hotel City Express, Playa del Carmen, Mexico (eingeladen); 13.03.2012.

  154. Autor/innen: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Helmut Puchner, E360; Fuad Badrieh; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr:
    "Simulation of Void Formation in Interconnect Lines";
    Vortrag: SPIE VLSI Circuits and Systems, Maspalomas, Spain; 19.05.2003 - 21.05.2003.

  155. Autor/in: Vito Simonka, E360

    V. Simonka:
    "Advancements In Annealing And Oxidation Steps For Compound Semiconductor Power Devices";
    Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA (eingeladen); 09.10.2018.

  156. Autor/in: Vito Simonka, E360

    V. Simonka:
    "Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav";
    Vortrag: Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia (eingeladen); 26.01.2017.

  157. Autor/innen: Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    A. P. Singulani, H. Ceric, S. Selberherr:
    "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
    Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 30.09.2013 - 04.10.2013.

  158. Autor/innen: Zlatan Stanojevic; Hans Kosina, E360

    Z. Stanojevic, H. Kosina:
    "Efficient Numerical Analysis of Dielectric Cavities";
    Vortrag: European Semiconductor Laser Workshop (ESLW), Brussels, Belgium; 21.09.2012 - 22.09.2012.

  159. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Physical Model for Ferroelectrics Based on Pyrocurrent Consideration";
    Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011.

  160. Autor/innen: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Solid-State Cooler - New Opportunities";
    Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011.

  161. Autor/innen: Gottfried Strasser, E362; Benedikt Schwarz, E362; Peter Reininger, E362; Oskar Baumgartner, E360; Werner Schrenk, E362; Tobias Zederbauer, E362; Hermann Detz, E362; Aaron Maxwell Andrews, E362; Hans Kosina, E360

    G. Strasser, B. Schwarz, P. Reininger, O. Baumgartner, W. Schrenk, T. Zederbauer, H. Detz, A. M. Andrews, H. Kosina:
    "Bi-functional Quantum Cascade Laser/Detectors for Integrated Photonics";
    Vortrag: ÖPG-Jahrestagung, Linz (eingeladen); 02.09.2013 - 06.09.2013.

  162. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell";
    Vortrag: LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France (eingeladen); 28.06.2019.

  163. Autor/innen: Viktor Sverdlov, E360; Hans Kosina, E360; Ch. Ringhofer; Mihail Nedjalkov; Siegfried Selberherr, E360

    V. Sverdlov, H. Kosina, Ch. Ringhofer, M Nedjalkov, S. Selberherr:
    "Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm";
    Vortrag: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; 04.11.2004 - 05.11.2004.

    Zusätzliche Informationen

  164. Autor/innen: Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    V. Sverdlov, D. Osintsev, S. Selberherr:
    "From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach";
    Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain (eingeladen); 27.01.2014 - 29.01.2014.

  165. Autor/innen: Michael Thesberg, E360; Neophytos Neophytou; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Thesberg, N. Neophytou, M. Pourfath, H. Kosina:
    "Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials";
    Vortrag: Energy-Materials-Nanotechnology Meeting on Thermoelectric Materials (EMN), Orlando, USA (eingeladen); 22.02.2016 - 25.02.2016.

  166. Autor/innen: M. Toledano-Luque; Ben Kaczer; Ph. J. Roussel; R. Degraeve; J. Franco; T. Kauerauf; Tibor Grasser, E360; G. Groeseneken

    M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, R. Degraeve, J. Franco, T. Kauerauf, T. Grasser, G. Groeseneken:
    "Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress";
    Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010.

  167. Autor/innen: Bianka Ullmann, E360; Alexander Grill, E360; Paul Manstetten, E360; Markus Jech, E360; Markus Kampl, E360; Wolfhard Zisser, E360; Lado Filipovic, E360; Michael Thesberg, E360; Florian Rudolf, E360; Thomas Windbacher, E360; Johann Cervenka, E360; Manfred Katterbauer, E360; Josef Weinbub, E360

    B. Ullmann, A. Grill, P. Manstetten, M. Jech, M. Kampl, W. H. Zisser, L. Filipovic, M. Thesberg, F. Rudolf, T. Windbacher, J. Cervenka, M. Katterbauer, J. Weinbub:
    "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik";
    Vortrag: Lange Nacht der Forschung 2016, Wien; 22.04.2016.

  168. Autor/innen: Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Wagner, T. Grasser, S. Selberherr:
    "Evaluation of Linear Solver Modules for Semiconductor Device Simulation";
    Vortrag: International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara (eingeladen); 02.06.2004 - 04.06.2004.

    Zusätzliche Informationen

  169. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "Research Software Engineering";
    Vortrag: SPOMECH Autumn School, Ostrava, Czech Republic (eingeladen); 11.11.2013 - 15.11.2013.

  170. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "Wigner Signed Particles for Electron Quantum Optics";
    Vortrag: UW-Madison's Grainger Institute Computing in Engineering Forum, USA (eingeladen); 20.09.2022 - 21.09.2022.

    Zusätzliche Informationen

  171. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Quantum Transport in Phase Space: Introduction and Applications";
    Vortrag: Summer School on Methods and Models of Kinetic Theory, Pesaro, Italy (eingeladen); 12.06.2022 - 18.06.2022.

    Zusätzliche Informationen

  172. Autor/innen: Josef Weinbub, E360; Mauro Ballicchia, E360; Mihail Nedjalkov, E360

    J. Weinbub, M. Ballicchia, M. Nedjalkov:
    "Single Electron Control for Quantum Interference Devices";
    Vortrag: Summer School on Methods and Models of Kinetic Theory - Winter Prelude, Porto Ercole, Italy - virtual (eingeladen); 08.02.2021 - 10.02.2021.

  173. Autor/innen: Wilfried Wessner, E360; Hajdin Ceric, E360; Christian Hollauer, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    W. Wessner, H. Ceric, Ch. Hollauer, E. Langer, S. Selberherr:
    "Electromigration Reliability TCAD Solutions";
    Vortrag: SEMICON Europa2005, München (eingeladen); 12.04.2005 - 14.04.2005.

  174. Autor/innen: Thomas Windbacher, E360; Bianka Ullmann, E360; Alexander Grill, E360; Josef Weinbub, E360

    T. Windbacher, B. Ullmann, A. Grill, J. Weinbub:
    "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik";
    Vortrag: European Researchers' Night: beSCIENCEd 2016, Wien; 30.09.2016.


Patente


  1. Autor/innen: Martin Denda; Martin Schörkmaier; Philipp Hack; Siegfried Selberherr, E360

    M. Denda, M. Schörkmaier, P. Hack, S. Selberherr:
    "A Noise Cancellation Enabled Audio System and Method for Adjusting a Target Transfer Function of a Noise Cancellation Enabled Audio System";
    Patent: International, Nr. WO 2020/152268 A1 ; eingereicht: 23.01.2020, erteilt: 30.07.2020.

  2. Autor/innen: Martin Denda; Martin Schörkmaier; Siegfried Selberherr, E360

    M. Denda, M. Schörkmaier, S. Selberherr:
    "A Noise Cancellation Enabled Audio System and Method for Adjusting a Target Transfer Function of a Noise Cancellation Enabled Audio System";
    Patent: Europe, Nr. EP 3 687 188 A1 ; eingereicht: 25.01.2019, erteilt: 29.07.2020.

  3. Autor/innen: Hiwa Mahmoudi, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360; Thomas Windbacher, E360

    H. Mahmoudi, S. Selberherr, V. Sverdlov, T. Windbacher:
    "Spin Torque Magnetic Integrated Circuit";
    Patent: International, Nr. WO 2014/154497 A1 ; eingereicht: 13.03.2014, erteilt: 02.10.2014.

    Zusätzliche Informationen

  4. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "RRAM Implication Logic Gates";
    Patent: Europe, Nr. EP 2 736 044 A1 ; eingereicht: 22.11.2012, erteilt: 28.05.2014.

    Zusätzliche Informationen

  5. Autor/innen: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "RRAM Implication Logic Gates";
    Patent: International, Nr. WO 2014/079747 A1 ; eingereicht: 13.11.2013, erteilt: 30.05.2014.

    Zusätzliche Informationen

  6. Autor/innen: Wanjun Park; Byoung-Ho Cheong; Eun-Ju Bae; Hans Kosina, E360; Mahdi Pourfath, E360

    W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
    "Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
    Patent: Europe, Nr. EP 1 655 791 A1 ; eingereicht: 09.09.2005, erteilt: 10.05.2006.

    Zusätzliche Informationen

  7. Autor/innen: Wanjun Park; Byoung-Ho Cheong; Eun-Ju Bae; Hans Kosina, E360; Mahdi Pourfath, E360

    W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
    "Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
    Patent: United States, Nr. US 2008/0121996 A1 ; eingereicht: 13.09.2005, erteilt: 29.05.2008.

  8. Autor/innen: Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360; Hiwa Mahmoudi, E360

    T. Windbacher, V. Sverdlov, S. Selberherr, H. Mahmoudi:
    "Spin Torque Magnetic Integrated Circuit";
    Patent: Europe, Nr. EP 2784 020 A1 ; eingereicht: 27.03.2013, erteilt: 01.10.2014.

    Zusätzliche Informationen


Habilitationsschriften


  1. Autor/in: Hajdin Ceric, E360

    H. Ceric:
    "Reliability of Interconnect Structures for Modern Integrated Circuits";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2014.

  2. Autor/in: Lado Filipovic, E360

    L. Filipovic:
    "Semiconductor Based Integrated Sensors";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2020.

  3. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Simulation of Miniaturized Semiconductor Devices";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2002.

  4. Autor/in: Hans Kosina, E360

    H. Kosina:
    "Current Transport in Electronic Devices";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 1997.

  5. Autor/in: Erasmus Langer, E360

    E. Langer:
    "Simulation von Mikrostrukturen";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 1997.

  6. Autor/in: Mahdi Pourfath, E360

    M. Pourfath:
    "Modeling Nanoelectric Devices";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2016.

  7. Autor/in: Helmut Puchner, E360

    H. Puchner:
    "Process Integration for Deep-Submicron CMOS Technology";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2001.

  8. Autor/in: Rüdiger Quay, E360

    R. Quay:
    "Gallium Nitride Electronics";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2007.

  9. Autor/in: Siegfried Selberherr, E360

    S. Selberherr:
    "Analysis and Simulation of Semiconductor Devices";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 1983.

  10. Autor/in: Viktor Sverdlov, E360

    V. Sverdlov:
    "Strain-Induced Effects in Advanced MOSFETs";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2010.

  11. Autor/in: Josef Weinbub, E360

    J. Weinbub:
    "High Performance Simulation of Microelectronic Devices with Nanometer Dimensions";
    TU Wien, Fakultät für Elektrotechnik und Informationstechnik, 2019.


Dissertationen (eigene und begutachtete)


  1. Autor/in: T. Aichinger
    Andere beteiligte Personen: Tibor Grasser, E360; Herbert Hutter, E164-01-2

    T. Aichinger:
    "On the Role of Hydrogen in Silicon Device Degradation and Metalization Processing";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, H. Hutter; Institut für Mikroelektronik, 2010; Rigorosum: 01.09.2010.

    Zusätzliche Informationen

  2. Autor/in: Tesfaye Ayalew, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Emmerich Bertagnolli, E362

    T. Ayalew:
    "SiC Semiconductor Devices Technology, Modeling and Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2004; Rigorosum: 26.02.2004.

    Zusätzliche Informationen

  3. Autor/in: Alireza R. Baghai-Wadji, E366-01
    Andere beteiligte Personen: Franz Seifert, E366-01; Siegfried Selberherr, E360

    A.R. Baghai-Wadji:
    "Berechnung der Quellenverteilung zur Anregung von akustischen Wellen in Oberflächenwellenfiltern";
    Betreuer/in(nen), Begutachter/in(nen): F. Seifert, S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1987; Rigorosum: 29.10.1987.

  4. Autor/in: Robert Bauer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Herbert Haas, E363

    R. Bauer:
    "Numerische Berechnung von Kapazitäten in dreidimensionalen Verdrahtungsstrukturen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Haas; Institut für Mikroelektronik, 1994; Rigorosum: 16.11.1994.

  5. Autor/in: Oskar Baumgartner, E360
    Andere beteiligte Personen: Hans Kosina, E360; Walter M. Weber, E362-01; Carlos Sampedro

    O. Baumgartner:
    "Numerical Modeling of Multilayer Semiconductor Devices";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, W. Weber, C. Sampedro; Institut für Mikroelektronik, 2020; Rigorosum: 05.03.2020.

  6. Autor/in: Judith Berens
    Andere beteiligte Personen: Tibor Grasser, E360; James Cooper; Peter Pichler

    J. Berens:
    "Carrier Mobility and Reliability of 4H-SiC Trench MOSFETs";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, J. Cooper, P. Pichler; Institut für Mikroelektronik, 2020; Rigorosum: 22.12.2020.

  7. Autor/in: Markus Bina
    Andere beteiligte Personen: Tibor Grasser, E360; C. Jungemann

    M. Bina:
    "Charge Transport Models for Reliability Engineering of Semiconductor Devices";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2014; Rigorosum: 25.03.2014.

    Zusätzliche Informationen

  8. Autor/in: Thomas Binder, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    T. Binder:
    "Rigorous Integration of Semiconductor Process and Device Simulators";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 2002; Rigorosum: 30.12.2002.

  9. Autor/in: M. Blaho, E362
    Andere beteiligte Personen: Erich Gornik, E362; Erasmus Langer, E360

    M. Blaho:
    "Experimental Characterisation of Smart Power Technology Devices Stressed by High Energy Pulses";
    Betreuer/in(nen), Begutachter/in(nen): E. Gornik, E. Langer; Institut für Festkörperelektronik, 2005; Rigorosum: 03.10.2005.

  10. Autor/in: Walter Bohmayr, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    W. Bohmayr:
    "Simulation der Ionenimplantation in kristalline Siliziumstrukturen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1996; Rigorosum: 28.10.1996.

  11. Autor/in: H Brand
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    H. Brand:
    "Thermoelektrizität und Hydrodynamik";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1994; Rigorosum: 26.05.1994.

  12. Autor/in: Helmut Brech
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    H. Brech:
    "Optimization of GaAs Based High Electron Mobility Transistors by Numerical Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998; Rigorosum: 03.04.1998.

  13. Autor/in: Hajdin Ceric, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Herbert Haas, E363

    H. Ceric:
    "Numerical Techniques in Modern TCAD";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Haas; Institut für Mikroelektronik, 2005; Rigorosum: 29.04.2005.

    Zusätzliche Informationen

  14. Autor/in: Johann Cervenka, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Helmut Haas

    J. Cervenka:
    "Three-Dimensional Mesh Generation for Device and Process Simulation";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, H. Haas; Institut für Mikroelektronik, 2004; Rigorosum: 20.10.2004.

    Zusätzliche Informationen

  15. Autor/in: Raffaele Alberto Coppeta, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Anton Köck

    R. Coppeta:
    "Dislocation Modeling in III-Nitrides";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, A. Köck; Institut für Mikroelektronik, 2015; Rigorosum: 15.06.2016.

    Zusätzliche Informationen

  16. Autor/in: Johannes Demel
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    J. Demel:
    "JANAP - Ein Programm zur Simulation von elektrischen Netzwerken";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Mikroelektronik, 1989; Rigorosum: 16.11.1989.

  17. Autor/in: R. Deutschmann
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    R. Deutschmann:
    "Entwicklung eines physikalischen HFET-Modells: Parameterextraktion und Verifikation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1995; Rigorosum: 10.10.1995.

  18. Autor/in: Siddhartha Dhar, E360
    Andere beteiligte Personen: Hans Kosina, E360; Gottfried Magerl, E354-01

    S. Dhar:
    "Analytical Mobility Models for Strained Silicon-Based Devices";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, G. Magerl; Institut für Mikroelektronik, 2007; Rigorosum: 30.08.2007.

    Zusätzliche Informationen

  19. Autor/in: Peter Dickinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    P. Dickinger:
    "Hochvolt DMOS Transistoren: Analyse und Optimierung";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1990; Rigorosum: 15.06.1990.

  20. Autor/in: Klaus Dragosits, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Hauser, E366-02

    K. Dragosits:
    "Modeling and Simulation of Ferroelectric Devices";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Hauser; Institut für Mikroelektronik, 2001; Rigorosum: 29.01.2001.

    Zusätzliche Informationen

  21. Autor/in: Paul Ellinghaus, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Ivan Dimov

    P. Ellinghaus:
    "Two-Dimensional Wigner Monte Carlo Simulation for Time-Resolved Quantum Transport with Scattering";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, I. Dimov; Institut für Mikroelektronik, 2016; Rigorosum: 25.02.2016.

    Zusätzliche Informationen

  22. Autor/in: Robert Entner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Gottfried Magerl, E354-01

    R. Entner:
    "Modeling and Simulation of Negative Bias Temperature Instability";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, G. Magerl; Institut für Mikroelektronik, 2007; Rigorosum: 13.08.2007.

    Zusätzliche Informationen

  23. Autor/in: Otmar Ertl, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dieter Süss, E138-03

    O. Ertl:
    "Numerical Methods for Topography Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Süss; Institut für Mikroelektronik, 2010; Rigorosum: 07.05.2010.

    Zusätzliche Informationen

  24. Autor/in: Rui Manuel Escadas Ramos Martins, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Emmerich Bertagnolli, E362

    R.M. Escadas Ramos Martins:
    "On the Design of Very Low Power Integrated Circuits";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 1999; Rigorosum: 25.02.1999.

  25. Autor/in: Franz Fasching, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    F. Fasching:
    "The Viennese Integrated System for Technology CAD Applications - Data Level Design and Implementation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 1994; Rigorosum: 17.11.1994.

  26. Autor/in: Lado Filipovic, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dragica Vasileska

    L. Filipovic:
    "Topography Simulation of Novel Processing Techniques";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Vasileska; Institut für Mikroelektronik, 2012; Rigorosum: 17.12.2012.

  27. Autor/in: Claus Fischer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    C. Fischer:
    "Bauelementsimulation in einer computergestützten Entwurfsumgebung";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1994; Rigorosum: 26.05.1994.

  28. Autor/in: Peter Fleischmann, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    P. Fleischmann:
    "Mesh Generation for Technology CAD in Three Dimensions";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 2000; Rigorosum: 24.02.2000.

    Zusätzliche Informationen

  29. Autor/in: Andrea Franz, E366
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Franz:
    "Numerische Simulation von Leistungsfeldeffekthalbleiterbauelementen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Allgemeine Elektrotechnik und Elektronik, 1984; Rigorosum: 21.11.1984.

  30. Autor/in: Gerhard Franz, E366
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    G. Franz:
    "Numerische Simulation von bipolaren Leistungshalbleiterbauelementen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Allgemeine Elektrotechnik und Elektronik, 1984; Rigorosum: 21.11.1984.

  31. Autor/in: Andreas Gehring, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Emmerich Bertagnolli, E362

    A. Gehring:
    "Simulation of Tunneling in Semiconductor Devices";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2003; Rigorosum: 05.12.2003.

  32. Autor/in: Joydeep Ghosh, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Marc Bescond, IM2NP

    J. Ghosh:
    "Modeling Spin-Dependent Transport in Silicon";
    Betreuer/in(nen), Begutachter/in(nen): V. Sverdlov, M. Bescond; Institut für Mikroelektronik, 2016; Rigorosum: 03.03.2016.

  33. Autor/in: Lukas Gnam, E360
    Andere beteiligte Personen: Josef Weinbub, E360; Joachim Schöberl, E101-03; Nancy Hitschfeld Kahler

    L. Gnam:
    "High Performance Mesh Adaptation for Technology Computer-Aided Design";
    Betreuer/in(nen), Begutachter/in(nen): J. Weinbub, J. Schöberl, N. Hitschfeld Kahler; Institut für Mikroelektronik, 2020; Rigorosum: 24.03.2020.

    Zusätzliche Informationen

  34. Autor/in: Wolfgang Gös, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Dieter Süss, E138-03

    W. Gös:
    "Hole Trapping and the Negative Bias Temperature Instability";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, D. Süss; Institut für Mikroelektronik, 2011; Rigorosum: 22.12.2012.

    Zusätzliche Informationen

  35. Autor/in: Tibor Grasser, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    T. Grasser:
    "Mixed-Mode Device Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1999; Rigorosum: 21.05.1999.

    Zusätzliche Informationen

  36. Autor/in: Alexander Grill, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Gaudenzio Meneghesso; Dionyz Pogany, E362

    A. Grill:
    "Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, G. Meneghesso, D. Pogany; Institut für Mikroelektronik, 2018; Rigorosum: 22.10.2018.

  37. Autor/in: Markus Gritsch, E360
    Andere beteiligte Personen: Hans Kosina, E360; Erich Gornik, E362

    M. Gritsch:
    "Numerical Modeling of Silicon-on-Insulator MOSFETs";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, E. Gornik; Institut für Mikroelektronik, 2002; Rigorosum: 20.12.2002.

    Zusätzliche Informationen

  38. Autor/in: Predrag Habas, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    P. Habas:
    "Analysis of Physical Effects in Small Silicon MOS Devices";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1993; Rigorosum: 17.11.1993.

  39. Autor/in: Michael Hackel, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    M. Hackel:
    "Transport und Injektion von Ladungsträgern in MOS-Strukturen mit der Monte-Carlo Methode";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1995; Rigorosum: 10.10.1995.

    Zusätzliche Informationen

  40. Autor/in: Stefan Halama, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    S. Halama:
    "The Viennese Integrated System for Technology CAD Applications";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 1994; Rigorosum: 27.05.1994.

  41. Autor/in: Christian Harlander, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Herbert Haas, E363

    C. Harlander:
    "Numerische Berechnung von Induktivitäten in dreidimensionalen Verdrahtungsstrukturen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Haas; Institut für Mikroelektronik, 2002; Rigorosum: 12.12.2002.

    Zusätzliche Informationen

  42. Autor/in: Philipp Paul Hehenberger, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Martin Gröschl, E134-01

    Ph. Hehenberger:
    "Advanced Characterization of the Bias Temperature Instability";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011; Rigorosum: 14.12.2011.

    Zusätzliche Informationen

  43. Autor/in: Otto Heinreichsberger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Richard Weiss

    O. Heinreichsberger:
    "Transiente Simulation von Silizium MOSFETs";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, R. Weiss; Institut für Mikroelektronik, 1992; Rigorosum: 02.06.1992.

  44. Autor/in: Rene Heinzl, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Werner Purgathofer, E193-02

    R. Heinzl:
    "Concepts for Scientific Computing";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Purgathofer; Institut für Mikroelektronik, 2007; Rigorosum: 18.09.2007.

    Zusätzliche Informationen

  45. Autor/in: Clemens Heitzinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Rupert Chabicovsky, E366-01

    C. Heitzinger:
    "Simulation and Inverse Modeling of Semiconductor Manufacturing Processes";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, R. Chabicovsky; Institut für Mikroelektronik, 2002; Rigorosum: 20.12.2002.

    Zusätzliche Informationen

  46. Autor/in: Gerhard Hobler, E362
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    G. Hobler:
    "Simulation der Ionenimplantation in ein-, zwei- und dreidimensionalen Strukturen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1988; Rigorosum: 23.11.1988.

  47. Autor/in: Andreas Hössinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    A. Hössinger:
    "Simulation of Ion Implantation for ULSI Technology";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 2000; Rigorosum: 11.09.2000.

  48. Autor/in: Christian Hollauer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Michael J. Vellekoop, E366-01

    Ch. Hollauer:
    "Modelling of Thermal Oxidation and Stress Effects";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, M. Vellekoop; Institut für Mikroelektronik, 2007; Rigorosum: 18.04.2007.

  49. Autor/in: Stefan Holzer, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Hermann Schichl

    S. Holzer:
    "Optimization for Enhanced Thermal Technology CAD Purposes";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, H. Schichl; Institut für Mikroelektronik, 2007; Rigorosum: 28.06.2007.

    Zusätzliche Informationen

  50. Autor/in: Rui Huang
    Andere beteiligte Personen: Tibor Grasser, E360; G. Dehm

    Rui Huang:
    "Stress and Microstructural Evolution of Electroplated Copper Films";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, G. Dehm; Institut für Mikroelektronik, 2013; Rigorosum: 09.01.2013.

  51. Autor/in: Yury Illarionov, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Luca Larcher

    Yu. Illarionov:
    "Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, L. Larcher; Institut für Mikroelektronik, 2015; Rigorosum: 18.12.2015.

    Zusätzliche Informationen

  52. Autor/in: Yury Illarionov, E360
    Andere beteiligte Personen: M. I. Vexler; A.P. Baraban; L.I. Goray

    Yu. Illarionov:
    "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
    Betreuer/in(nen), Begutachter/in(nen): M. I. Vexler, A. Baraban, L. Goray; Ioffe Institute, 2015; Rigorosum: 22.01.2015.

  53. Autor/in: Markus Jech, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Mathieu Luisier; Alain Bravaix

    M. Jech:
    "The Physics of Non-Equilibrium Reliability Phenomena";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, M. Luisier, A. Bravaix; Institut für Mikroelektronik, 2020; Rigorosum: 19.11.2020.

  54. Autor/in: Werner Jüngling, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Jüngling:
    "Entwicklung und Auswertung verbesserter Modelle für die Prozeß- und Bauelementesimulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Allgemeine Elektrotechnik und Elektronik, 1986; Rigorosum: 05.06.1986.

  55. Autor/in: Goran Kaiblinger-Grujin, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    G. Kaiblinger-Grujin:
    "Physikalische Modellierung und Monte-Carlo-Simulation der Elektronenbeweglichkeit in Silizium";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1997; Rigorosum: 13.03.1998.

  56. Autor/in: Markus Kampl, E360
    Andere beteiligte Personen: Hans Kosina, E360; Antonio Garcia Loureiro; Gerhard Hobler, E362

    M. Kampl:
    "Investigating Hot-Carrier Effects using the Backward Monte Carlo Method";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, A. Garcia Loureiro, G. Hobler; Institut für Mikroelektronik, 2019; Rigorosum: 05.04.2019.

    Zusätzliche Informationen

  57. Autor/in: Hossein Karamitaheri, E360
    Andere beteiligte Personen: Hans Kosina, E360; Ernst Bauer, E138-03

    H. Karamitaheri:
    "Thermal and Thermoelectric Properties of Nanostructures";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, E. Bauer; Institut für Mikroelektronik, 2013; Rigorosum: 18.07.2013.

    Zusätzliche Informationen

  58. Autor/in: Gerhard Karlowatz, E360
    Andere beteiligte Personen: Hans Kosina, E360; Ewald Benes, E134-01

    G. Karlowatz:
    "Advanced Monte Carlo Simulation for Semiconductor Devices";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, E. Benes; Institut für Mikroelektronik, 2009; Rigorosum: 24.06.2009.

    Zusätzliche Informationen

  59. Autor/in: Wolfgang Kausel, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel:
    "Zweidimensionale transiente Simulation von Halbleiterbauelementen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Mikroelektronik, 1989; Rigorosum: 02.03.1989.

  60. Autor/in: N. Khalil
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    N. Khalil:
    "ULSI Characterization with Technology Computer-Aided Design";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1995; Rigorosum: 31.05.1995.

  61. Autor/in: Heung Bae Kim
    Andere beteiligte Personen: Gerhard Hobler, E362; Hans Kosina, E360

    H. Kim:
    "Design, Simulation and Fabrication of Micro/Nano Functional Structures Using ION Beams";
    Betreuer/in(nen), Begutachter/in(nen): G. Hobler, H. Kosina; Institut für Festkörperelektronik, 2007; Rigorosum: 20.04.2007.

  62. Autor/in: Heinrich Kirchauer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    H. Kirchauer:
    "Photolithography Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1998; Rigorosum: 21.04.1998.

  63. Autor/in: Xaver Klemenschits, E360
    Andere beteiligte Personen: Lado Filipovic, E360; Andreas Erdmann; Helmut Pottmann, E104-04

    X. Klemenschits:
    "Emulation and Simulation of Microelectronic Fabrication Processes";
    Betreuer/in(nen), Begutachter/in(nen): L. Filipovic, A. Erdmann, H. Pottmann; Institut für Mikroelektronik, 2022; Rigorosum: 08.04.2022.

  64. Autor/in: Robert Klima, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    R. Klima:
    "Three-Dimensional Device Simulation with Minimos-NT";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 2002; Rigorosum: 19.12.2002.

  65. Autor/in: Martin Knaipp, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    M. Knaipp:
    "Modellierung von Temperatureinflüssen in Halbleiterbauelementen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998; Rigorosum: 21.10.1998.

  66. Autor/in: Theresia Knobloch, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Paul Hurley; Georg Düsberg

    T. Knobloch:
    "On the Electrical Stability of 2D Material-Based Field-Effect Transistors";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, P. Hurley, G. Düsberg; Institut für Mikroelektronik, 2021; Rigorosum: 22.12.2021.

  67. Autor/in: Christian Köpf, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    C. Köpf:
    "Modellierung des Elektronentransports in Verbindungshalbleiterlegierungen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1997; Rigorosum: 16.12.1997.

    Zusätzliche Informationen

  68. Autor/in: Christian Koller
    Andere beteiligte Personen: Dionyz Pogany, E362; Tibor Grasser, E360; Thomas Uren

    C Koller:
    "The Role of Carbon in Creating Insulating Behavior in GaN-on-Si Buffers: A Physical Model";
    Betreuer/in(nen), Begutachter/in(nen): D. Pogany, T. Grasser, T. Uren; Institut für Festkörperelektronik, 2019; Rigorosum: 22.01.2019.

  69. Autor/in: Robert Kosik, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Christian Schmeiser

    R. Kosik:
    "Numerical Challenges on the Road to NanoTCAD";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, Ch. Schmeiser; Institut für Mikroelektronik, 2004; Rigorosum: 09.09.2004.

    Zusätzliche Informationen

  70. Autor/in: Hans Kosina, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    H. Kosina:
    "Simulation des Ladungstransportes in elektronischen Bauelementen mit Hilfe der Monte-Carlo-Methode";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1992; Rigorosum: 09.06.1992.

    Zusätzliche Informationen

  71. Autor/in: Erasmus Langer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    E. Langer:
    "Anregung und Ausbreitung elektroakustischer Wellen in piezoelektrischen Kristallen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Allgemeine Elektrotechnik und Elektronik, 1986; Rigorosum: 28.02.1986.

  72. Autor/in: Ernst Leitner, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    E. Leitner:
    "Diffusionsprozesse in dreidimensionalen Strukturen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1997; Rigorosum: 05.02.1998.

  73. Autor/in: Ling Li, E360
    Andere beteiligte Personen: Hans Kosina, E360; Dieter Süss, E138-03

    L. Li:
    "Charge Transport in Organic Semiconductor Materials and Devices";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, D. Süss; Institut für Mikroelektronik, 2008; Rigorosum: 08.02.2008.

    Zusätzliche Informationen

  74. Autor/in: Philipp Lindorfer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    P. Lindorfer:
    "Numerische Simulation von Galliumarsenid MESFETs";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1991; Rigorosum: 15.03.1991.

  75. Autor/in: J. Lorenz
    Andere beteiligte Personen: Heiner Ryssel; Siegfried Selberherr, E360

    J. Lorenz:
    "Diskretisierung und Gittergeneration für die mehrdimensionale Simulation von Implantation und Diffusion";
    Betreuer/in(nen), Begutachter/in(nen): H. Ryssel, S. Selberherr; Friedrich-Alexander-Universität Erlangen-Nürnberg und Institut für Mikroelektronik, 2000; Rigorosum: 28.04.2000.

  76. Autor/in: Oswald Männer
    Andere beteiligte Personen: Franz Seifert, E366-01; Siegfried Selberherr, E360

    O. Männer:
    "Knotenvariablen-Analyse von Oberflächenwellenfiltern";
    Betreuer/in(nen), Begutachter/in(nen): F. Seifert, S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1987; Rigorosum: 29.09.1987.

  77. Autor/in: Hiwa Mahmoudi, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Bernd Meinerzhagen

    H. Mahmoudi:
    "Devices and Circuits for Stateful Logic and Memristive Sensing Applications";
    Betreuer/in(nen), Begutachter/in(nen): V. Sverdlov, B. Meinerzhagen; Institut für Mikroelektronik, 2014; Rigorosum: 28.04.2014.

    Zusätzliche Informationen

  78. Autor/in: Alexander Makarov, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Sorin Cristoloveanu, IMEP

    A. Makarov:
    "Modeling of Emerging Resistive Switching Based Memory Cells";
    Betreuer/in(nen), Begutachter/in(nen): V. Sverdlov, S. Cristoloveanu; Institut für Mikroelektronik, 2014; Rigorosum: 18.03.2014.

    Zusätzliche Informationen

  79. Autor/in: Paul Manstetten, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Josef Weinbub, E360; Michael Wimmer, E193-02; Harald Köstler

    P. Manstetten:
    "Efficient Flux Calculations for Topography Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, J. Weinbub, M. Wimmer, H. Köstler; Institut für Mikroelektronik, 2018; Rigorosum: 28.06.2018.

    Zusätzliche Informationen

  80. Autor/in: Goran Milovanovic, E360
    Andere beteiligte Personen: Hans Kosina, E360; Dieter Süss, E138-03

    G. Milovanovic:
    "Numerical Modeling of Quantum Cascade Lasers";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, D. Süss; Institut für Mikroelektronik, 2011; Rigorosum: 30.03.2011.

    Zusätzliche Informationen

  81. Autor/in: R. Minixhofer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Pribyl

    R. Minixhofer:
    "Integration Technology Simulation into the Semiconductor Manufacturing Environment";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Pribyl; Institut für Mikroelektronik, 2006; Rigorosum: 31.03.2006.

    Zusätzliche Informationen

  82. Autor/in: Robert Mlekus, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    R. Mlekus:
    "Object-Oriented Algorithm and Model Management in TCAD Applications";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 2000; Rigorosum: 13.01.2000.

  83. Autor/in: Mahdi Moradinasab, E360
    Andere beteiligte Personen: Hans Kosina, E360; Thomas Fromherz

    M. Moradinasab:
    "Optical Properties of Semiconductor Nanostructures";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, T. Fromherz; Institut für Mikroelektronik, 2015; Rigorosum: 24.04.2015.

    Zusätzliche Informationen

  84. Autor/in: Gerd Nanz, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Richard Weiss

    G. Nanz:
    "Numerische Methoden in der zweidimensionalen Halbleiterbauelementsimulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, R. Weiss; Institut für Mikroelektronik, 1989; Rigorosum: 23.11.1989.

  85. Autor/in: Alexandre Nentchev, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Herbert Haas, E363

    A. Nentchev:
    "Numerical Analysis and Simulation in Microelectronics by Vector Finite Elements";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Haas; Institut für Mikroelektronik, 2008; Rigorosum: 31.01.2008.

    Zusätzliche Informationen

  86. Autor/in: W. Ochsenreiter
    Andere beteiligte Personen: Hermann Kopetz; Siegfried Selberherr, E360

    W. Ochsenreiter:
    "Fehlertolerante Uhrensynchronisation in verteilten Realzeitsystemen";
    Betreuer/in(nen), Begutachter/in(nen): H. Kopetz, S. Selberherr; TU Wien, 1987; Rigorosum: 27.05.1987.

  87. Autor/in: Roberto Orio, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; J. W. Swart

    R. Orio:
    "Electromigration Modeling and Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, J. W. Swart; Institut für Mikroelektronik, 2010; Rigorosum: 04.06.2010.

  88. Autor/in: Dimitry Osintsev, E360
    Andere beteiligte Personen: Viktor Sverdlov, E360; Dieter Süss, E138-03

    D. Osintsev:
    "Modeling Spintronic Effects in Silicon";
    Betreuer/in(nen), Begutachter/in(nen): V. Sverdlov, D. Süss; Institut für Mikroelektronik, 2014; Rigorosum: 28.05.2014.

    Zusätzliche Informationen

  89. Autor/in: Vassil Palankovski, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    V. Palankovski:
    "Simulation of Heterojunction Bipolar Transistors";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2000; Rigorosum: 12.12.2000.

    Zusätzliche Informationen

  90. Autor/in: Santo Papaleo, E360
    Andere beteiligte Personen: Hajdin Ceric, E360; Olivier Thomas, IM2NP Marseille

    S. Papaleo:
    "Mechanical Reliability of Open Through Silicon Via Structures for Integrated Circuits";
    Betreuer/in(nen), Begutachter/in(nen): H. Ceric, O. Thomas; Institut für Mikroelektronik, 2016; Rigorosum: 19.12.2016.

  91. Autor/in: Jong Mun Park, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Emmerich Bertagnolli, E362

    J.M. Park:
    "Novel Power Devices for Smart Power Applications";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2004; Rigorosum: 07.12.2004.

    Zusätzliche Informationen

  92. Autor/in: Christoph Pichler, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    C. Pichler:
    "Integrated Semiconductor Technology Analysis";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1997; Rigorosum: 22.05.1997.

    Zusätzliche Informationen

  93. Autor/in: P. Pichler, E366
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    P. Pichler:
    "Numerische Simulation kritischer Prozeßschritte in der Halbleitertechnik";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Allgemeine Elektrotechnik und Elektronik, 1985; Rigorosum: 30.10.1985.

  94. Autor/in: Hubert Pimingstorfer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    H. Pimingstorfer:
    "Integration und Anwendung von Simulatoren in der CMOS-Entwicklung";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1993; Rigorosum: 30.11.1993.

  95. Autor/in: Richard Plasun, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    R. Plasun:
    "Optimization of VLSI Semiconductor Devices";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 1999; Rigorosum: 21.10.1999.

  96. Autor/in: Gregor Pobegen
    Andere beteiligte Personen: Tibor Grasser, E360; Peter Hadley, TU Graz

    G. Pobegen:
    "Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, P. Hadley; Institut für Mikroelektronik, 2013; Rigorosum: 05.12.2013.

  97. Autor/in: Christian Poschalko, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Georg Brasseur, E366-01

    C. Poschalko:
    "The Simulation of Emission from Printed Circuit Boards under a Metallic Cover";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, G. Brasseur; Institut für Mikroelektronik, 2009; Rigorosum: 20.11.2009.

    Zusätzliche Informationen

  98. Autor/in: Mahdi Pourfath, E360
    Andere beteiligte Personen: Hans Kosina, E360; Emmerich Bertagnolli, E362

    M. Pourfath:
    "Numeric Study of Quantum Transport in Carbon Nanotube-Based Transistors";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007; Rigorosum: 03.07.2007.

  99. Autor/in: Helmut Puchner, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    H. Puchner:
    "Advanced Process Modeling for VLSI Technology";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1996; Rigorosum: 31.05.1996.

  100. Autor/in: Wolfgang Pyka, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    W. Pyka:
    "Feature Scale Modeling for Etching and Deposition Processes in Semiconductor Manufacturing";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 2000; Rigorosum: 11.05.2000.

  101. Autor/in: Rüdiger Quay, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    R. Quay:
    "Analysis and Simulation of High Electron Mobility Transistors";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2001; Rigorosum: 18.09.2001.

    Zusätzliche Informationen

  102. Autor/in: Michael Quell, E360
    Andere beteiligte Personen: Josef Weinbub, E360; Eduard Gröller, E193-02; Mark Sussman, FSU

    M. Quell:
    "Parallel Velocity Extension and Load-Balanced Re-Distancing on Hierarchical Grids for High Performance Process TCAD";
    Betreuer/in(nen), Begutachter/in(nen): J. Weinbub, E. Gröller, M. Sussman; Institut für Mikroelektronik, 2022; Rigorosum: 13.01.2022.

    Zusätzliche Informationen

  103. Autor/in: Mustafa Radi, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    M. Radi:
    "Three-Dimensional Simulation of Thermal Oxidation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 1998; Rigorosum: 02.12.1998.

  104. Autor/in: Gerald Rescher
    Andere beteiligte Personen: Tibor Grasser, E360; Peter Hadley, TU Graz; James Cooper

    G. Rescher:
    "Behavior of SiC-MOSFETs under Temperature and Voltage Stress";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, P. Hadley, J. Cooper; Institut für Mikroelektronik, 2018; Rigorosum: 13.11.2018.

    Zusätzliche Informationen

  105. Autor/in: Gerhard Rieger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Werner Purgathofer, E193-02

    G. Rieger:
    "Ein graphischer Editor für Entwurf von Halbleiterbauteilen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Purgathofer; Institut für Mikroelektronik, 1996; Rigorosum: 23.05.1996.

  106. Autor/in: Rodrigo Rodriguez-Torres, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Emmerich Bertagnolli, E362

    R. Rodriguez-Torres:
    "Three-Dimensional Simulation of Split-Drain MAGFETs";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2003; Rigorosum: 13.05.2003.

    Zusätzliche Informationen

  107. Autor/in: Gunnar Andreas Rott
    Andere beteiligte Personen: Tibor Grasser, E360; Juriaan Schmitz; Susanna Reggiani

    G.A. Rott:
    "Negative Bias Temperature Instability and Hot-Carrier Degradation of 130 nm Technology Transistors including Recovery Effects";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018; Rigorosum: 28.06.2018.

  108. Autor/in: Martin Rottinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    M. Rottinger:
    "Selected Simulations of Semiconductor Structures";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1999; Rigorosum: 25.06.1999.

  109. Autor/in: Marco Rovitto, E360
    Andere beteiligte Personen: Hajdin Ceric, E360; Kirsten Weide-Zaage

    M. Rovitto:
    "Electromigration Reliability Issue in Interconnects for Three-Dimensional Integration Technologies";
    Betreuer/in(nen), Begutachter/in(nen): H. Ceric, K. Weide-Zaage; Institut für Mikroelektronik, 2016; Rigorosum: 13.12.2016.

  110. Autor/in: Bernhard Ruch
    Andere beteiligte Personen: Tibor Grasser, E360; C. Jungemann; Peter Hadley, TU Graz

    B. Ruch:
    "Hot-Carrier Degradation in Planar and Trench Si-MOSFETs";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, C. Jungemann, P. Hadley; Institut für Mikroelektronik, 2021; Rigorosum: 15.03.2021.

  111. Autor/in: Florian Rudolf, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Josef Weinbub, E360; Helmut Pottmann, E104-04

    F. Rudolf:
    "Symmetry- and Similarity-Aware Volumetric Meshing";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, J. Weinbub, H. Pottmann; Institut für Mikroelektronik, 2016; Rigorosum: 10.11.2016.

    Zusätzliche Informationen

  112. Autor/in: Karl Rupp, E360
    Andere beteiligte Personen: Tibor Grasser, E360; C. Jungemann

    K. Rupp:
    "Deterministic Numerical Solution of the Boltzmann Transport Equation";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2011; Rigorosum: 19.12.2011.

    Zusätzliche Informationen

  113. Autor/in: Gerhard Rzepa, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Luca Larcher; F. Crupi

    G. Rzepa:
    "Efficient Physical Modeling of Bias Temperature Instability";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, L. Larcher, F. Crupi; Institut für Mikroelektronik, 2018; Rigorosum: 27.06.2018.

    Zusätzliche Informationen

  114. Autor/in: Rainer Sabelka, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Herbert Haas, E363

    R. Sabelka:
    "Dreidimensionale Finite Elemente Simulation von Verdrahtungsstrukturen auf Integrierten Schaltungen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Haas; Institut für Mikroelektronik, 2001; Rigorosum: 21.05.2001.

    Zusätzliche Informationen

  115. Autor/in: Franz Schanovsky, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Andreas Schenk

    F. Schanovsky:
    "Atomistic Modeling in the Context of the Bias Temperature Instability";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, A. Schenk; Institut für Mikroelektronik, 2013; Rigorosum: 19.03.2013.

    Zusätzliche Informationen

  116. Autor/in: Gerhard Schrom, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    G. Schrom:
    "Ultra-Low-Power CMOS Technology";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998; Rigorosum: 07.07.1998.

  117. Autor/in: Philipp Schwaha, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Ivan Dimov

    P. Schwaha:
    "Beyond Atavistic Structures in Scientific Computing";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, I. Dimov; Institut für Mikroelektronik, 2010; Rigorosum: 22.12.2010.

    Zusätzliche Informationen

  118. Autor/in: Josef Schweda
    Andere beteiligte Personen: Karl Riedling, E366; Siegfried Selberherr, E360

    J. Schweda:
    "Analysis of Shift Mechanisms in BiCMOS Hall Devices with Scope of a Precise SPICE Simulation Model";
    Betreuer/in(nen), Begutachter/in(nen): K. Riedling, S. Selberherr; Institut für Sensor- und Aktuatorsysteme, 2007; Rigorosum: 16.04.2007.

  119. Autor/in: Albert Seidl
    Andere beteiligte Personen: Heiner Ryssel; Siegfried Selberherr, E360

    A. Seidl:
    "Zweidimensionale Simulation der lokalen Oxidation von Silizium";
    Betreuer/in(nen), Begutachter/in(nen): H. Ryssel, S. Selberherr; Friedrich-Alexander-Universität Erlangen-Nürnberg und Institut für Mikroelektronik, 1988; Rigorosum: 23.02.1989.

  120. Autor/in: Siegfried Selberherr, E360
    Andere beteiligte Personen: Hans Pötzl, E366; Fritz Paschke, E366

    S. Selberherr:
    "Zweidimensionale Modellierung von MOS-Transistoren";
    Betreuer/in(nen), Begutachter/in(nen): H. Pötzl, F. Paschke; Institut für Physikalische Elektronik, 1981; Rigorosum: 05.03.1981.

  121. Autor/in: Prateek Sharma, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Susanna Reggiani; Alain Bravaix

    P. Sharma:
    "Predictive and Efficient Modeling of Hot Carrier Degradation with Drift-Diffusion Based Carrier Transport Models";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, S. Reggiani, A. Bravaix; Institut für Mikroelektronik, 2021; Rigorosum: 26.02.2021.

  122. Autor/in: Alireza Sheikholeslami, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Karl Riedling, E366

    A. Sheikholeslami:
    "Topography Simulation of Deposition and Etching Processes";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, K. Riedling; Institut für Mikroelektronik, 2006; Rigorosum: 06.10.2006.

  123. Autor/in: Thomas Simlinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    T. Simlinger:
    "Simulation von Heterostruktur-Feldeffekttransistoren";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1996; Rigorosum: 30.05.1996.

  124. Autor/in: Vito Simonka, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Josef Weinbub, E360; Yasuto Hijikata; Ulrich Schmid, E366-02

    V. Simonka:
    "Thermal Oxidation and Dopant Activation of Silicon Carbide";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, J. Weinbub, Y. Hijikata, U. Schmid; Institut für Mikroelektronik, 2018; Rigorosum: 05.11.2018.

    Zusätzliche Informationen

  125. Autor/in: Anderson P. Singulani, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Olivier Thomas, IM2NP Marseille

    A. P. Singulani:
    "Advanced Methods for Mechanical Analysis and Simulation of Through Silicon Vias";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, O. Thomas; Institut für Mikroelektronik, 2014; Rigorosum: 07.07.2014.

    Zusätzliche Informationen

  126. Autor/in: Sergey Smirnov, E360
    Andere beteiligte Personen: Hans Kosina, E360; Karl Unterrainer, E362

    S. Smirnov:
    "Physical Modeling of Electron Transport in Strained Silicon and Silicon-Germanium";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, K. Unterrainer; Institut für Mikroelektronik, 2003; Rigorosum: 17.12.2003.

  127. Autor/in: Michael Spevak, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dirk Praetorius, E101-02

    M. Spevak:
    "On the Specification and the Assembly of Discretized Differential Equations";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Praetorius; Institut für Mikroelektronik, 2008; Rigorosum: 03.03.2008.

    Zusätzliche Informationen

  128. Autor/in: Bernhard Stampfer, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Montserrat Nafria Maqueda; Francesco Maria Puglisi

    B. Stampfer:
    "Advanced Electrical Characterization of Charge Trapping in MOS Transistors";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, M. Nafria Maqueda, F. M. Puglisi; Institut für Mikroelektronik, 2020; Rigorosum: 04.12.2020.

  129. Autor/in: Zlatan Stanojevic
    Andere beteiligte Personen: Hans Kosina, E360; Francisco Gamiz

    Z. Stanojevic:
    "Physical Mobility Modeling for TCAD Device Simulation";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, F. Gamiz; Institut für Mikroelektronik, 2016; Rigorosum: 26.09.2016.

  130. Autor/in: Ivan Starkov, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Martin Gröschl, E134-01

    I. Starkov:
    "Comprehensive Physical Modeling of Hot-Carrier Induced Degradation";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013; Rigorosum: 14.01.2013.

  131. Autor/in: Martin Stiftinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Fritz Paschke, E366

    M. Stiftinger:
    "Simulation und Modellierung von Hochvolt-DMOS-Transistoren";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, F. Paschke; Institut für Mikroelektronik, 1994; Rigorosum: 06.10.1994.

  132. Autor/in: Hannes Stippel, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    H. Stippel:
    "Simulation der Ionen-Implantation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1993; Rigorosum: 17.11.1993.

  133. Autor/in: Michael Stockinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Emmerich Bertagnolli, E362

    M. Stockinger:
    "Optimization of Ultra-Low-Power CMOS Transistors";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2000; Rigorosum: 25.01.2000.

  134. Autor/in: Roberta Stradiotto, KAI GmbH
    Andere beteiligte Personen: Tibor Grasser, E360; Gaudenzio Meneghesso

    R. Stradiotto:
    "Characterization of Electrically Active Defects at III-N/Dielectric Interfaces";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, G. Meneghesso; Institut für Mikroelektronik, 2016; Rigorosum: 16.12.2016.

    Zusätzliche Informationen

  135. Autor/in: F. Straker
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    F. Straker:
    "Numerische Berechnung von Kapazitäten in hochintegrierten Schaltungen";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Allgemeine Elektrotechnik und Elektronik, 1985; Rigorosum: 30.10.1985.

  136. Autor/in: Ernst Strasser, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    E. Strasser:
    "Simulation von Topographieprozessen in der Halbleiterfertigung";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1994; Rigorosum: 17.11.1994.

  137. Autor/in: Rudolf Strasser, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    R. Strasser:
    "Rigorous TCAD Investigations on Semiconductor Fabrication Technology";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1999; Rigorosum: 23.06.1999.

  138. Autor/in: Martin Thurner, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Pötzl, E366

    M. Thurner:
    "Dreidimensionale Modellierung von MOS-Transistoren";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, H. Pötzl; Institut für Mikroelektronik, 1988; Rigorosum: 25.10.1988.

  139. Autor/in: Alexander Toifl, E360
    Andere beteiligte Personen: Josef Weinbub, E360; Ulrich Schmid, E366-02; Li-Tien Cheng, UCSD

    A. Toifl:
    "Numerical Methods for Three-Dimensional Selective Epitaxy and Anisotropic Wet Etching Simulations";
    Betreuer/in(nen), Begutachter/in(nen): J. Weinbub, U. Schmid, L.-T. Cheng; Institut für Mikroelektronik, 2021; Rigorosum: 19.08.2021.

    Zusätzliche Informationen

  140. Autor/in: Oliver Triebl, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Martin Gröschl, E134-01

    O. Triebl:
    "Reliability Issues in High-Voltage Semiconductor Devices";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2012; Rigorosum: 24.10.2012.

    Zusätzliche Informationen

  141. Autor/in: Christian Troger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    C. Troger:
    "Modellierung von Quantisierungseffekten in Feldeffekttransistoren";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2001; Rigorosum: 18.06.2001.

  142. Autor/in: Walter Tuppa, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Dietmar Dietrich, E384

    W. Tuppa:
    "VMAKE - A CASE-Oriented Configuration Management Utility";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, D. Dietrich; Institut für Mikroelektronik, 1996; Rigorosum: 28.11.1996.

  143. Autor/in: Bianka Ullmann, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Juriaan Schmitz; Susanna Reggiani

    B. Ullmann:
    "Mixed Negative Bias Temperature Instability and Hot-Carrier Stress";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018; Rigorosum: 28.06.2018.

    Zusätzliche Informationen

  144. Autor/in: Stephan Enzo Ungersböck, E360
    Andere beteiligte Personen: Hans Kosina, E360; Emmerich Bertagnolli, E362

    E. Ungersböck:
    "Advanced Modeling of Strained CMOS Technology";
    Betreuer/in(nen), Begutachter/in(nen): H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007; Rigorosum: 23.04.2007.

    Zusätzliche Informationen

  145. Autor/in: Martin Vasicek, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Johann Summhammer, E141-04

    M. Vasicek:
    "Advanced Macroscopic Transport Models";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009; Rigorosum: 12.10.2009.

    Zusätzliche Informationen

  146. Autor/in: Stanislav Vitanov, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Rüdiger Quay, E360

    S. Vitanov:
    "Simulation of High Electron Mobility Transistors";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, R. Quay; Institut für Mikroelektronik, 2010; Rigorosum: 20.12.2010.

    Zusätzliche Informationen

  147. Autor/in: Karl Christian Wagner, E360
    Andere beteiligte Personen: Franz Seifert, E366-01; Siegfried Selberherr, E360

    K. Wagner:
    "Simulation von Volumenwelleneffekten in SAW-Bauelementen";
    Betreuer/in(nen), Begutachter/in(nen): F. Seifert, S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1990; Rigorosum: 20.03.1990.

  148. Autor/in: Martin Wagner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Emmerich Bertagnolli, E362

    M. Wagner:
    "Simulation of Thermoelectric Devices";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2007; Rigorosum: 18.12.2007.

    Zusätzliche Informationen

  149. Autor/in: Stephan Wagner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Emmerich Bertagnolli, E362

    S. Wagner:
    "Small-Signal Device and Circuit Simulation";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2005; Rigorosum: 22.04.2005.

    Zusätzliche Informationen

  150. Autor/in: Michael Waltl, E360
    Andere beteiligte Personen: Tibor Grasser, E360; D. Schmitt-Landsiedel, CoAutor U. Schmi ...

    M. Waltl:
    "Experimental Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, D. Schmitt-Landsiedel; Institut für Mikroelektronik, 2016; Rigorosum: 09.09.2016.

    Zusätzliche Informationen

  151. Autor/in: Katja Anna Waschneck
    Andere beteiligte Personen: Tibor Grasser, E360; Juriaan Schmitz; Susanna Reggiani

    K. Waschneck:
    "Modeling Bias Temperature Instability in Si and SiC MOSFETs using Activation Energy Maps";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2020; Rigorosum: 07.12.2020.

  152. Autor/in: Christoph Wasshuber, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    C. Wasshuber:
    "About Single-Electron Devices and Circuits";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1997; Rigorosum: 18.02.1997.

    Zusätzliche Informationen

  153. Autor/in: Josef Weinbub, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; A Asenov

    J. Weinbub:
    "Frameworks for Micro- and Nanoelectronics Device Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, A. Asenov; Institut für Mikroelektronik, 2014; Rigorosum: 17.02.2014.

    Zusätzliche Informationen

  154. Autor/in: Wilfried Wessner, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Werner Purgathofer, E193-02

    W. Wessner:
    "Mesh Refinement Techniques for TCAD Tools";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Purgathofer; Institut für Mikroelektronik, 2007; Rigorosum: 09.01.2007.

    Zusätzliche Informationen

  155. Autor/in: Karl Wimmer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Wolfgang Fallmann, E366-01

    K. Wimmer:
    "Two-Dimensional Nonplanar Process Simulation";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1993; Rigorosum: 18.06.1993.

  156. Autor/in: Yannick Wimmer, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Matthew B. Watkins; Peter Mohn, E134-01

    Y. Wimmer:
    "Hydrogen Related Defects in Amorphous SiO2 and the Negative Bias Temperature Instability";
    Betreuer/in(nen), Begutachter/in(nen): T. Grasser, M. Watkins, P. Mohn; Institut für Mikroelektronik, 2017; Rigorosum: 27.11.2017.

    Zusätzliche Informationen

  157. Autor/in: Thomas Windbacher, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Johann Summhammer, E141-04

    T. Windbacher:
    "Engineering Gate Stacks for Field-Effect Transistors";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, J. Summhammer; Institut für Mikroelektronik, 2010; Rigorosum: 25.06.2010.

  158. Autor/in: Robert Wittmann, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erich Gornik, E362

    R. Wittmann:
    "Miniaturization Problems in CMOS Technology: Investigation of Doping Profiles and Reliability";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2007; Rigorosum: 27.02.2007.

    Zusätzliche Informationen

  159. Autor/in: Wolfhard Zisser, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Manfred Kaltenbacher, E325-03

    W. H. Zisser:
    "Electromigration in Interconnect Structures";
    Betreuer/in(nen), Begutachter/in(nen): S. Selberherr, M. Kaltenbacher; Institut für Mikroelektronik, 2016; Rigorosum: 21.06.2016.

    Zusätzliche Informationen


Diplom- und Master-Arbeiten (eigene und betreute)


  1. Autor/in: W. Agler
    Andere beteiligte Personen: Peter A. Markowich; Siegfried Selberherr, E360

    W. Agler:
    "Die numerische Lösung der transienten Halbleitergleichungen";
    Betreuer/in(nen): P. Markowich, S. Selberherr; Institut für Numerische und Angewandte Mathematik, 1983.

  2. Autor/in: Max Bacher
    Andere beteiligte Personen: Erasmus Langer, E360; Tibor Grasser, E360

    M. Bacher:
    "Implementierung einer Client/Server-Architektur mit Graphischer Benutzeroberfläche als Verteilte Anwendung";
    Betreuer/in(nen): E. Langer, T. Grasser; Institut für Mikroelektronik, 2002.

  3. Autor/in: Robert Baldemair
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    R. Baldemair:
    "Numerische Verfahren zur Darstellung von Energiebändern in Halbleitern";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996.

  4. Autor/in: Werner Barger
    Andere beteiligte Personen: Alfred Slibar; Gustav Weiß; Siegfried Selberherr, E360

    W. Barger:
    "Die Fahrdynamik des LKW-Tankzuges bei periodischer Erregung unter variierten Beladungs- und Fahrbahnverhältnissen";
    Betreuer/in(nen): A. Slibar, G. Weiß, S. Selberherr; Institut für Maschinendynamik und Meßtechnik, 1981.

  5. Autor/in: Robert Bauer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Karl Wimmer, E360; Hans Kosina, E360

    R. Bauer:
    "Numerische Bereichstransformation für die zweidimensionale Prozeß -Simulation";
    Betreuer/in(nen): S. Selberherr, K. Wimmer, H. Kosina; Institut für Mikroelektronik, 1990.

  6. Autor/in: Oskar Baumgartner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Markus Karner, E360

    O. Baumgartner:
    "Simulation of Quantum Transport Using the Non-Equilibrium Green´s Functions Formalism";
    Betreuer/in(nen): T. Grasser, M. Karner; Institut für Mikroelektronik, 2007; Abschlussprüfung: 18.01.2007.

  7. Autor/in: Manuel Bellini
    Andere beteiligte Personen: Tibor Grasser, E360; Markus Jech, E360; Yannick Wimmer, E360

    M. Bellini:
    "Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide";
    Betreuer/in(nen): T. Grasser, M. Jech, Y. Wimmer; Institut für Mikroelektronik, 2017; Abschlussprüfung: 09.03.2017.

  8. Autor/in: Markus Bina
    Andere beteiligte Person: Tibor Grasser, E360

    M. Bina:
    "Simulation of Interface States Generated During Stress in MOSFETs";
    Betreuer/in(nen): T. Grasser; Institut für Mikroelektronik, 2010; Abschlussprüfung: 23.04.2010.

  9. Autor/in: Thomas Binder, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    T. Binder:
    "Erstellung einer 3D Geometrie Support Library für das PIF-Fileformat";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Mikroelektronik, 1996.

  10. Autor/in: Markus Braitner
    Andere beteiligte Personen: Tibor Grasser, E360; Paul-Jürgen Wagner, E360

    M. Braitner:
    "Erstellung und Verifikation von Modellen für Leistungs-MOSFETs für die quantitative EMV-Simulation";
    Betreuer/in(nen): T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2012; Abschlussprüfung: 13.01.2012.

  11. Autor/in: Walter Bruck
    Andere beteiligte Personen: Claus Fischer, E360; Siegfried Selberherr, E360

    W. Bruck:
    "Konvertierung eines Drahtgittermodells in eine Oberflächendarstellung";
    Betreuer/in(nen): C. Fischer, S. Selberherr; Institut für Mikroelektronik, 1993.

  12. Autor/in: Johann Cervenka, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    J. Cervenka:
    "Generation of Geometry Conforming Triangular Grids";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Mikroelektronik, 1999.

  13. Autor/in: Bernhard Czermak
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    B. Czermak:
    "Monte-Carlo Simulation des stationären Elektronentransportes in polaren Halbleitern";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1993.

  14. Autor/in: Peter Dickinger, E360
    Andere beteiligte Personen: Wolfgang Kausel, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    P. Dickinger:
    "Zweidimensionale Halbleiterbauelementsimulation mit Hilfe des transienten, zweidimensionalen Bauteilesimulationsprogramms BAMBI";
    Betreuer/in(nen): W. Kausel, G. Nanz, S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1987.

  15. Autor/in: Mohamed El Ghazi
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    M. El Ghazi:
    "Erstellung eines Programmes zur Dreidimensionalen Visualisierung von Simulationsdaten aus dem TCAD-Framework VISTA";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997.

  16. Autor/in: Robert Entner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Andreas Gehring, E360

    R. Entner:
    "Three-Dimensional Device Simulation with MINIMOS-NT Using the Wafer-State-Server";
    Betreuer/in(nen): T. Grasser, A. Gehring; Institut für Mikroelektronik, 2003.

  17. Autor/in: Franz Fasching, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    F. Fasching:
    "F2C - Ein Übersetzer von FORTRAN nach C";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1989.

  18. Autor/in: Gabriele Ferger
    Andere beteiligte Person: Siegfried Selberherr, E360

    G. Ferger:
    "Deutsch-Englische Terminologie zum Thema Technologie CAD";
    Betreuer/in(nen): S. Selberherr; Institut für Mikroelektronik, 1995.

  19. Autor/in: Claus Fischer, E360
    Andere beteiligte Personen: Gerd Nanz, E360; Peter Dickinger, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Fischer:
    "Gittererzeugung in der zweidimensionalen Halbleiter-Bauelemente-Simulation";
    Betreuer/in(nen): G. Nanz, P. Dickinger, H. Kosina, S. Selberherr; Institut für Mikroelektronik, 1989.

  20. Autor/in: Patrick Fleischanderl
    Andere beteiligte Personen: Tibor Grasser, E360; Michael Waltl, E360

    P. Fleischanderl:
    "Charakterisierung von Hot Carrier Degradation in Siliziumtransistoren";
    Betreuer/in(nen): T. Grasser, M. Waltl; Institut für Mikroelektronik, 2018; Abschlussprüfung: 26.11.2018.

  21. Autor/in: Peter Fleischmann, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Franz Fasching, E360

    P. Fleischmann:
    "Implementation of a Robust 3D Delaunay Grid Generator with Complexity O(n log n)";
    Betreuer/in(nen): S. Selberherr, F. Fasching; Institut für Mikroelektronik, 1994.

  22. Autor/in: Gerhard Franz, E366
    Andere beteiligte Personen: A. Schütz, E366; Siegfried Selberherr, E360

    G. Franz:
    "Zweidimensionale Simulation der MOS-Kapazität";
    Betreuer/in(nen): A. Schütz, S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1981.

  23. Autor/in: Natalie Freiberger
    Andere beteiligte Personen: Josef Weinbub, E360; Dmytro Iurashev

    N. Freiberger:
    "Design, Development, and Analysis of a Comprehensive DNA En-and Decoding Open Source Program using Python";
    Betreuer/in(nen): J. Weinbub, D. Iurashev; Fachhochschule Wiener Neustadt und Institut für Mikroelektronik, 2020; Abschlussprüfung: 17.09.2020.

  24. Autor/in: Lukas Friembichler, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Stefan Holzer, E360

    L. Friembichler:
    "Design and Implementation of a Generic Optimizer";
    Betreuer/in(nen): E. Langer, S. Holzer; Institut für Mikroelektronik, 2006; Abschlussprüfung: 27.04.2006.

  25. Autor/in: Renato Gluderer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Albert Schuler, E366

    R. Gluderer:
    "Berechnung von Elektronenbahnen und Raumladung";
    Betreuer/in(nen): S. Selberherr, A. Schuler; Institut für Allgemeine Elektrotechnik und Elektronik, 1986.

  26. Autor/in: Albert Grafl
    Andere beteiligte Personen: Siegfried Selberherr, E360; Franz Fasching, E360

    A. Grafl:
    "Interaktiver graphischer Editor für mehrdimensionale, skalar- und vektorwertige Datenfelder";
    Betreuer/in(nen): S. Selberherr, F. Fasching; Institut für Mikroelektronik, 1992.

  27. Autor/in: Tibor Grasser, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    T. Grasser:
    "Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

  28. Autor/in: Michael Grech
    Andere beteiligte Personen: Erasmus Langer, E360; Christian Troger, E360

    M. Grech:
    "Testing of a Digital Signal Processor in a Real-Time Operating System for Space Applications";
    Betreuer/in(nen): E. Langer, C. Troger; Institut für Mikroelektronik, 1999.

  29. Autor/in: Markus Gritsch, E360
    Andere beteiligte Personen: Hans Kosina, E360; Tibor Grasser, E360

    M. Gritsch:
    "Implementation of a Non-Parabolic Energy-Transport Model";
    Betreuer/in(nen): H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999.

  30. Autor/in: Stefan Halama, E360
    Andere beteiligte Personen: Gerhard Hobler, E362; Siegfried Selberherr, E360

    S. Halama:
    "Untersuchung der thermischen Oxidation von Silicium mit Hilfe molekulardynamischer Simulationsmethoden";
    Betreuer/in(nen): G. Hobler, S. Selberherr; Institut für Mikroelektronik, 1989.

  31. Autor/in: Manfred Harrer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    M. Harrer:
    "Monte-Carlo Simulation des Stationären Löchertransportes in Kovalenten Halbleitern mittels Reihenentwicklung des Valenzbandes";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

  32. Autor/in: Rene Heinzl, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Andreas Hössinger, E360

    R. Heinzl:
    "A Three Dimensional Analytical Ion Implantation Tool Using the Wafer-State-Server";
    Betreuer/in(nen): E. Langer, A. Hössinger; Institut für Mikroelektronik, 2003.

  33. Autor/in: Gerhard Hobler, E362
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    G. Hobler:
    "Monte-Carlo Simulation der Ionenimplantation";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Allgemeine Elektrotechnik und Elektronik, 1985.

  34. Autor/in: Bernhard Höflechner, E360
    Andere beteiligte Personen: Hans Kosina, E360; Stephan Enzo Ungersböck, E360

    B. Höflechner:
    "A Random Number Generator Library for Monte Carlo Simulation";
    Betreuer/in(nen): H. Kosina, E. Ungersböck; Institut für Mikroelektronik, 2006; Abschlussprüfung: 22.06.2006.

  35. Autor/in: Christian Hollauer, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Thomas Binder, E360

    Ch. Hollauer:
    "Implementierung einer HDF5-Datenschnittstelle für den Wafer State Server";
    Betreuer/in(nen): E. Langer, T. Binder; Institut für Mikroelektronik, 2002.

  36. Autor/in: Stefan Holzer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Robert Klima, E360

    S. Holzer:
    "Implementation of a Platform Independent "Queue Manager" for the Optimization Framework SIESTA";
    Betreuer/in(nen): S. Selberherr, R. Klima; Institut für Mikroelektronik, 2002.

  37. Autor/in: Marco Huymajer
    Andere beteiligte Personen: Tibor Grasser, E360; Michael Waltl, E360

    M. Huymajer:
    "Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS";
    Betreuer/in(nen): T. Grasser, M. Waltl; Institut für Mikroelektronik, 2016; Abschlussprüfung: 16.06.2016.

  38. Autor/in: Gottfried Ira
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    G. Ira:
    "Eine Bytecode-Übersetzer für XLISP";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1997.

  39. Autor/in: Werner Jüngling, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    W. Jüngling:
    "Hochdotierungseffekte in Silizium";
    Betreuer/in(nen): S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1983.

  40. Autor/in: Markus Kampl
    Andere beteiligte Personen: Hans Kosina, E360; Zlatan Stanojevic

    M. Kampl:
    "Implementation of a Backward Monte Carlo Algorithm to Investigate Hot Carriers in Semiconductor Devices";
    Betreuer/in(nen): H. Kosina, Z. Stanojevic; Institut für Mikroelektronik, 2015; Abschlussprüfung: 20.11.2015.

  41. Autor/in: Christoph Kandolf
    Andere beteiligte Person: Hans Kosina, E360

    C. Kandolf:
    "Numerische Lösung der Liouville-Von Neumann Gleichung in transformierten Koordinaten";
    Betreuer/in(nen): H. Kosina; Institut für Mikroelektronik, 2019; Abschlussprüfung: 12.04.2019.

  42. Autor/in: Sascha Karlich
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    S. Karlich:
    "Simulation von Extrinsischer Diffusion in Silizium";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996.

  43. Autor/in: Markus Karner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Andreas Gehring, E360

    M. Karner:
    "Multi-Dimensional Simulation of Closed Quantum Systems";
    Betreuer/in(nen): T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004.

    Zusätzliche Informationen

  44. Autor/in: Christian Kernstock, E360
    Andere beteiligte Personen: Hans Kosina, E360; Markus Karner, E360

    C. Kernstock:
    "Design and Implementation of TCAD Environment Tools";
    Betreuer/in(nen): H. Kosina, M. Karner; Institut für Mikroelektronik, 2008; Abschlussprüfung: 28.11.2008.

  45. Autor/in: Heinrich Kirchauer, E360
    Andere beteiligte Personen: Wolfgang F. G. Mecklenbräuker, E389-03; Franz Hlawatsch, E389-03

    H. Kirchauer:
    "Optimal Filters for Signal Enhancement: Time-Frequency Analysis and Design";
    Betreuer/in(nen): W.F.G. Mecklenbräuker, F. Hlawatsch; Institut für Nachrichtentechnik und Informationstechnik, 1994.

  46. Autor/in: Clemens Klöckler, E360
    Andere beteiligte Person: Erasmus Langer, E360

    C. Klöckler:
    "Automatic Solver Control for Linear Equation Systems";
    Betreuer/in(nen): E. Langer; Institut für Mikroelektronik, 2009; Abschlussprüfung: 18.06.2009.

  47. Autor/in: Theresia Knobloch, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Gerhard Rzepa, E360

    T. Knobloch:
    "Characterization and Physical Modeling of Degradation in MoS2 Transistors";
    Betreuer/in(nen): T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2016; Abschlussprüfung: 07.10.2016.

  48. Autor/in: Tamas Kocsis
    Andere beteiligte Person: Siegfried Selberherr, E360

    T. Kocsis:
    "Modeling of Hot-Carrier Effects in MOS-Devices";
    Betreuer/in(nen): S. Selberherr; TU Budapest und Institut für Mikroelektronik, 1990.

  49. Autor/in: Günter Koder
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    G. Koder:
    "Analyse eines Hall Sensor-IC";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996.

  50. Autor/in: Christian Köhle
    Andere beteiligte Personen: Erasmus Langer, E360; Thomas Binder, E360

    Ch. Köhle:
    "Implementierung eines Verteilten Finite Octtree mittels CORBA";
    Betreuer/in(nen): E. Langer, T. Binder; Institut für Mikroelektronik, 2000.

  51. Autor/in: Gerhard Kral
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    G. Kral:
    "Aufrüstung von i80286-Computersystemen durch den Einsatz des INTEL Prozessors i80386";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Mikroelektronik, 1992.

  52. Autor/in: Matthias Kratzmann
    Andere beteiligte Personen: Tibor Grasser, E360; Michael Waltl, E360

    M. Kratzmann:
    "Entwicklung eines rauscharmen CV Messmoduls für die Defektspektroskopie von MOS Transistoren";
    Betreuer/in(nen): T. Grasser, M. Waltl; E360, 2021; Abschlussprüfung: 18.11.2021.

  53. Autor/in: Peter Willibald Lagger
    Andere beteiligte Personen: Tibor Grasser, E360; Karl Rupp, E360

    P. Lagger:
    "Scattering Operators for the Spherical Harmonics Expansion of the Boltzmann Transport Equation";
    Betreuer/in(nen): T. Grasser, K. Rupp; Institut für Mikroelektronik, 2011; Abschlussprüfung: 07.10.2011.

  54. Autor/in: Erasmus Langer, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    E. Langer:
    "Numerische Simulation der Halbleiterdiode";
    Betreuer/in(nen): S. Selberherr; Institut für Physikalische Elektronik, 1980.

  55. Autor/in: C. Ledl
    Andere beteiligte Personen: Siegfried Selberherr, E360; Claus Fischer, E360

    C. Ledl:
    "Konvertierung Rasterorientierter Geometrien in Polygonal Begrenzte";
    Betreuer/in(nen): S. Selberherr, C. Fischer; Institut für Mikroelektronik, 1994.

  56. Autor/in: Hannes Leitner
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    H. Leitner:
    "Erweiterung eines Graphischen Editors zum Entwurf Dreidimensionaler Halbleiterstrukturen";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1997.

  57. Autor/in: Christoph Lenz
    Andere beteiligte Personen: Helmut Pottmann, E104-04; Josef Weinbub, E360

    C. Lenz:
    "Curvature Based Surface Mesh Simplification";
    Betreuer/in(nen): H. Pottmann, J. Weinbub; Institut für Diskrete Mathematik und Geometrie und Institut für Mikroelektronik, 2019; Abschlussprüfung: 06.06.2019.

  58. Autor/in: Ilias Liakopoulos
    Andere beteiligte Personen: Siegfried Selberherr, E360; Martin Stiftinger, E360

    I. Liakopoulos:
    "Überwachung eines VMS-Clusters";
    Betreuer/in(nen): S. Selberherr, M. Stiftinger; Institut für Mikroelektronik, 1994.

  59. Autor/in: Philipp Lindorfer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Johannes Demel

    P. Lindorfer:
    "JANICS - ein Programm zur Übersetzung von Schaltungsbeschreibungen für die computerunterstützte Netzwerkanalyse";
    Betreuer/in(nen): S. Selberherr, J. Demel; Institut für Allgemeine Elektrotechnik und Elektronik, 1987.

  60. Autor/in: A. Lugbauer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    A. Lugbauer:
    "Numerische Simulation von Band-zu-Band Tunneleffekten";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1991.

  61. Autor/in: Georg Mach
    Andere beteiligte Personen: Erasmus Langer, E360; Josef Weinbub, E360

    G. Mach:
    "A Highly Versatile Tool Chain for Robust Computational Fluid Dynamics Simulations";
    Betreuer/in(nen): E. Langer, J. Weinbub; Institut für Mikroelektronik, 2017; Abschlussprüfung: 19.01.2017.

  62. Autor/in: Alfred Madlmayer
    Andere beteiligte Personen: A. Schütz, E366; Siegfried Selberherr, E360

    A. Madlmayer:
    "Messungen an MOS-Transistoren im Bereich des Lawinendurchbruchs";
    Betreuer/in(nen): A. Schütz, S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1984.

  63. Autor/in: Oswald Männer
    Andere beteiligte Person: Siegfried Selberherr, E360

    O. Männer:
    "Macromodellierung von CMOS-Logikbausteinen";
    Betreuer/in(nen): S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1983.

  64. Autor/in: Josef Franz Marsoner
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    J. Marsoner:
    "Evaluierung der Entscheidungskriterien zum Redesign Systemnaher Software auf Mainframe-Rechnern";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Mikroelektronik, 1997.

  65. Autor/in: Georg Mayer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Otto Heinreichsberger, E360; Hans Kosina, E360

    G. Mayer:
    "Anwendung des PIF (Profile Interchange Format) in der Prozeß- und Device-Simulation";
    Betreuer/in(nen): S. Selberherr, O. Heinreichsberger, H. Kosina; Institut für Mikroelektronik, 1990.

  66. Autor/in: Martin Meschik
    Andere beteiligte Personen: Siegfried Selberherr, E360; Martin Stiftinger, E360

    M. Meschik:
    "Schaltungssynthese von analogen Funktionsblöcken mit dem Analog-Entwicklungssystem ADAM (Analog Design Automation System)";
    Betreuer/in(nen): S. Selberherr, M. Stiftinger; Institut für Mikroelektronik, 1993.

  67. Autor/in: Markus Müllauer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    M. Müllauer:
    "Modellierung von Paarstreuungen und Simulation ihrer Auswirkungen auf einen 1µm-BiCMOS-Prozeß";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

  68. Autor/in: Peter Nebenführ
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    P. Nebenführ:
    "Implementierung eines Schaltungs-Editors im OSF/Motif-Widget-Set";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Mikroelektronik, 1997.

  69. Autor/in: Alexandre Nentchev, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Stephan Enzo Ungersböck, E360

    A. Nentchev:
    "Development of a Set-Up-Software for the Global Trigger of the CMS Experiment on the Large Hadron Collider in CERN";
    Betreuer/in(nen): E. Langer, E. Ungersböck; Institut für Mikroelektronik, 2004.

  70. Autor/in: Dessislava Palankovska
    Andere beteiligte Person: Siegfried Selberherr, E360

    D. Palankovska:
    "Untersuchung schneller Bipolartransistoren mittels Simulation";
    Betreuer/in(nen): S. Selberherr; Institut für Mikroelektronik, 2010; Abschlussprüfung: 12.03.2010.

  71. Autor/in: Peter Pichler
    Andere beteiligte Person: Siegfried Selberherr, E360

    P. Pichler:
    "Simulation von Operationsverstärkern";
    Betreuer/in(nen): S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1982.

  72. Autor/in: Hubert Pimingstorfer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    H. Pimingstorfer:
    "Automatische Übersetzung von FORTRAN nach C";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1989.

  73. Autor/in: Florian Pöppl
    Andere beteiligte Personen: Josef Weinbub, E360; Michael Quell, E360

    F. Pöppl:
    "Analysis and Optimization of Nested Meshes for Adaptive Mesh Refinement";
    Betreuer/in(nen): J. Weinbub, M. Quell; Institut für Mikroelektronik, 2020; Abschlussprüfung: 17.06.2020.

  74. Autor/in: Philipp Prause, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Markus Karner, E360

    P. Prause:
    "Design and Integration of Distributed Computing Concepts in a TCAD Framework";
    Betreuer/in(nen): E. Langer, M. Karner; Institut für Mikroelektronik, 2008; Abschlussprüfung: 09.10.2008.

  75. Autor/in: Michael Quell, E360
    Andere beteiligte Person: Winfried Auzinger, E101-02

    M. Quell:
    "Splitting-Verfahren für nichtlineare Evolutionsgleichungen";
    Betreuer/in(nen): W. Auzinger; Institut für Analysis und Scientific Computing, 2018; Abschlussprüfung: 2018.

    Zusätzliche Informationen

  76. Autor/in: Mustafa Radi, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    M. Radi:
    "Simulation der Diffusion mit zellularen Automaten";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Mikroelektronik, 1994.

  77. Autor/in: Bernhard Reinisch
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    B. Reinisch:
    "Eine Universelle Eingabeverwaltung für die Steuerung von Simulatoren";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1997.

  78. Autor/in: Tobias Reiter, E360
    Andere beteiligte Person: Stefan Rotter, E136

    T. Reiter:
    "Stabilisierung von Spin-Ensembles in hybriden Quantensystemen";
    Betreuer/in(nen): S. Rotter; Institut für Theoretische Physik (136), 2022; Abschlussprüfung: 29.04.2022.

  79. Autor/in: Gerhard Rieger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Franz Fasching, E360

    G. Rieger:
    "Ein Zwei-Paß FORTRAN nach C Übersetzer";
    Betreuer/in(nen): S. Selberherr, F. Fasching; Institut für Mikroelektronik, 1991.

  80. Autor/in: Andrea Rokus
    Andere beteiligte Personen: Siegfried Selberherr, E360; A. Schütz, E366

    A. Rokus:
    "Zur numerischen Lösung pentadiagonaler Gleichungssysteme hohen Ranges";
    Betreuer/in(nen): S. Selberherr, A. Schütz; Institut für Numerische Mathematik, 1980.

  81. Autor/in: Karl Rupp
    Andere beteiligte Person: Erasmus Langer, E360

    K. Rupp:
    "Multiphysics Modelling in the Context of Generative Programming";
    Betreuer/in(nen): E. Langer; Institut für Mikroelektronik, 2009; Abschlussprüfung: 24.04.2009.

  82. Autor/in: Gerhard Rzepa
    Andere beteiligte Personen: Tibor Grasser, E360; Wolfgang Gös, E360

    G. Rzepa:
    "Microscopic Modeling of NBTI in MOS Transistors";
    Betreuer/in(nen): T. Grasser, W. Gös; Institut für Mikroelektronik, 2013; Abschlussprüfung: 20.11.2013.

  83. Autor/in: Rainer Sabelka, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    R. Sabelka:
    "Entwicklung einer X-Windows-Schnittstelle für das Programm OPERA";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1994.

  84. Autor/in: Kourosh Salami
    Andere beteiligte Personen: Claus Fischer, E360; Siegfried Selberherr, E360

    K. Salami:
    "Behandlung schiefer Grenzflächen in der Halbleitersimulation";
    Betreuer/in(nen): C. Fischer, S. Selberherr; Institut für Mikroelektronik, 1993.

  85. Autor/in: Herbert Sasshofer
    Andere beteiligte Person: Siegfried Selberherr, E360

    H. Sasshofer:
    "Hierarchische Modellierung von Bipolartransistoren";
    Betreuer/in(nen): S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1984.

  86. Autor/in: Franz Schanovsky, E360
    Andere beteiligte Person: Tibor Grasser, E360

    F. Schanovsky:
    "Dispersive Transport Modeling within the Multiple Trapping Framework";
    Betreuer/in(nen): T. Grasser; Institut für Mikroelektronik, 2008; Abschlussprüfung: 14.03.2008.

  87. Autor/in: Christian Schleich, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Michael Waltl, E360

    C. Schleich:
    "Charakterisierung und Modellierung von SiC Transistoren";
    Betreuer/in(nen): T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019; Abschlussprüfung: 25.01.2019.

  88. Autor/in: Klaus Schnass
    Andere beteiligte Personen: Hans Kosina, E360; Oskar Baumgartner, E360

    K. Schnass:
    "Simulation of Ballistic Two-Dimensional Quantum Transport";
    Betreuer/in(nen): H. Kosina, O. Baumgartner; Institut für Mikroelektronik, 2016; Abschlussprüfung: 18.11.2016.

  89. Autor/in: Benedikt Schwarz, E362
    Andere beteiligte Personen: Tibor Grasser, E360; Markus Bina

    B. Schwarz:
    "Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model";
    Betreuer/in(nen): T. Grasser, M. Bina; Institut für Mikroelektronik, 2011; Abschlussprüfung: 17.06.2011.

  90. Autor/in: Siegfried Selberherr, E360
    Andere beteiligte Person: Franz Pacha

    S. Selberherr:
    "Erstellung eines Plottersoftwarepaketes";
    Betreuer/in(nen): F. Pacha; Institut für Allgemeine Elektrotechnik, 1976.

  91. Autor/in: Andreas Selinger
    Andere beteiligte Personen: Tibor Grasser, E360; Karl Rupp, E360

    A. Selinger:
    "Lösung der Poisson Gleichung auf Supercomputern";
    Betreuer/in(nen): T. Grasser, K. Rupp; Institut für Mikroelektronik, 2018; Abschlussprüfung: 13.06.2018.

  92. Autor/in: I.J. Serrano-Lopez
    Andere beteiligte Personen: Abel Garcia-Barrientos; Vassil Palankovski, E360

    I. Serrano-Lopez:
    "Study of Non-Stationary Effects of Space Charge in InN Films for Amplifiers and Delay Lines";
    Betreuer/in(nen): A. Garcia-Barrientos, V. Palankovski; Universidad Politecnica de Pachua (UPP), Mexico, 2013; Abschlussprüfung: 12.02.2013.

  93. Autor/in: Karl Slama
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Hobler, E362

    K. Slama:
    "Simulation der Ionenimplantation von Bor in Siliziumeinkristallen bei niedrigen Energien";
    Betreuer/in(nen): S. Selberherr, G. Hobler; Institut für Mikroelektronik, 1988.

  94. Autor/in: R. Sonderfeld
    Andere beteiligte Personen: Hans Kosina, E360; Zlatan Stanojevic

    R. Sonderfeld:
    "Numerical Calculation of Semiconductor Band Structures";
    Betreuer/in(nen): H. Kosina, Z. Stanojevic; Institut für Mikroelektronik, 2014; Abschlussprüfung: 28.11.2014.

  95. Autor/in: Michael Spevak, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Andreas Gehring, E360

    M. Spevak:
    "Simulation of Rotationally Symmetric Semiconductor Devices";
    Betreuer/in(nen): T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004.

    Zusätzliche Informationen

  96. Autor/in: Andreas Stach, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    A. Stach:
    "Simulation von MOSFET-Schaltungen";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1995.

  97. Autor/in: Bernhard Stampfer
    Andere beteiligte Personen: Tibor Grasser, E360; Alexander Grill, E360

    B. Stampfer:
    "Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model";
    Betreuer/in(nen): T. Grasser, A. Grill; Institut für Mikroelektronik, 2016; Abschlussprüfung: 22.01.2016.

  98. Autor/in: Martin Standfest
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    M. Standfest:
    "Numerische Berechnung der Zustandsdichte von Halbleitern";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997.

  99. Autor/in: Zlatan Stanojevic
    Andere beteiligte Person: Tibor Grasser, E360

    Z. Stanojevic:
    "Simulation of Carrier Transport in Ultra-Thin-Body Devices";
    Betreuer/in(nen): T. Grasser; Institut für Mikroelektronik, 2009; Abschlussprüfung: 19.06.2009.

  100. Autor/in: Klaus Starnberger
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    K. Starnberger:
    "Interpolationsbasierte Modellierung von MOS-Transistoren";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1996.

  101. Autor/in: Martin Stiftinger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Otto Heinreichsberger, E360; Hans Kosina, E360

    M. Stiftinger:
    "Lösungsverfahren für die diskretisierte Kontinuitätsgleichung";
    Betreuer/in(nen): S. Selberherr, O. Heinreichsberger, H. Kosina; Institut für Mikroelektronik, 1989.

  102. Autor/in: F. Straker
    Andere beteiligte Person: Siegfried Selberherr, E360

    F. Straker:
    "Teilschaltungsbibliothek JANLIB für die computerunterstützte Netzwerkanalyse";
    Betreuer/in(nen): S. Selberherr; Institut für Allgemeine Elektrotechnik und Elektronik, 1982.

  103. Autor/in: Rudolf Strasser, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Claus Fischer, E360

    R. Strasser:
    "Mehrgittermethoden für die 2D-Prozeßsimulation";
    Betreuer/in(nen): S. Selberherr, C. Fischer; Institut für Mikroelektronik, 1995.

  104. Autor/in: Alexander Toifl, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Josef Weinbub, E360

    A. Toifl:
    "Modeling and Simulation of Thermal Annealing of Implanted GaN and SiC";
    Betreuer/in(nen): E. Langer, J. Weinbub; Institut für Mikroelektronik, 2018; Abschlussprüfung: 15.06.2018.

  105. Autor/in: G. Trattnig
    Andere beteiligte Personen: G. Kovacs; Erasmus Langer, E360; Siegfried Selberherr, E360

    G. Trattnig:
    "Genauere Bestimmung der Tensordaten piezoelektrischer Materialien";
    Betreuer/in(nen): G. Kovacs, E. Langer, S. Selberherr; Institut für Mikroelektronik, 1989.

  106. Autor/in: Christian Troger, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    C. Troger:
    "Numerische Modellierung des Elektronentransports in Halbleiter-Heteroübergängen";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

  107. Autor/in: Walter Tuppa, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Franz Fasching, E360

    W. Tuppa:
    "Eine Applikationsschnittstelle für eine Technologie-CAD Datenbank";
    Betreuer/in(nen): S. Selberherr, F. Fasching; Institut für Mikroelektronik, 1992.

  108. Autor/in: Walter Tuppa, E360
    Andere beteiligte Personen: Wolfgang Kleinert; Siegfried Selberherr, E360

    W. Tuppa:
    "Optimierender Linker für Superpipeling- und Superskalarrechner";
    Betreuer/in(nen): W. Kleinert, S. Selberherr; Institut für Technische Informatik, 1991.

  109. Autor/in: Stephan Enzo Ungersböck, E360
    Andere beteiligte Personen: Peter Pongratz, E138-05; Hans Kosina, E360

    E. Ungersböck:
    "Numerische Berechnung der Bandstruktur von Halbleitern";
    Betreuer/in(nen): P. Pongratz, H. Kosina; Institut für Mikroelektronik, 2002; Abschlussprüfung: 15.05.2002.

  110. Autor/in: Peter Verhas, E360
    Andere beteiligte Person: Siegfried Selberherr, E360

    P. Verhas:
    "Simulation of Non Zero Oxide Mobility in MOS Transistors";
    Betreuer/in(nen): S. Selberherr; TU Budapest und Institut für Mikroelektronik, 1989.

  111. Autor/in: Martin Wagner, E360
    Andere beteiligte Person: Johann Summhammer, E141-04

    M. Wagner:
    "3-Dimensional Simulation of Thermography Images based on PV-Cell Characteristics";
    Betreuer/in(nen): J. Summhammer; E141, 2014; Abschlussprüfung: 13.03.2014.

  112. Autor/in: Martin Wagner, E360
    Andere beteiligte Personen: Tibor Grasser, E360; Hans Kosina, E360

    M. Wagner:
    "A Base Library for Full Band Monte Carlo Simulations";
    Betreuer/in(nen): T. Grasser, H. Kosina; Institut für Mikroelektronik, 2004.

    Zusätzliche Informationen

  113. Autor/in: Markus Wagner
    Andere beteiligte Personen: Erasmus Langer, E360; Karl Rupp, E360

    M. Wagner:
    "Algebraic Multigrid Methods on Parallel Architectures";
    Betreuer/in(nen): E. Langer, K. Rupp; Institut für Mikroelektronik, 2011; Abschlussprüfung: 25.11.2011.

  114. Autor/in: Stephan Wagner, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Tibor Grasser, E360

    S. Wagner:
    "The Minimos-NT Linear Equation Solving Module";
    Betreuer/in(nen): S. Selberherr, T. Grasser; Institut für Mikroelektronik, 2001.

  115. Autor/in: Dominic Waldhör
    Andere beteiligte Personen: Tibor Grasser, E360; Yannick Wimmer, E360

    D. Waldhör:
    "Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects";
    Betreuer/in(nen): T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018; Abschlussprüfung: 05.10.2018.

  116. Autor/in: Michael Waltl
    Andere beteiligte Personen: Tibor Grasser, E360; Paul-Jürgen Wagner, E360

    M. Waltl:
    "Change Point Detection in Time Dependent Defect Spectroscopy Data";
    Betreuer/in(nen): T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2011; Abschlussprüfung: 25.11.2011.

  117. Autor/in: Liqiang Wang
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    L. Wang:
    "Monte-Carlo Simulation des Elektronentransports in Technologisch Signifikanten Halbleitern";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995.

  118. Autor/in: Christoph Wasshuber, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Otto Heinreichsberger, E360; Martin Stiftinger, E360

    C. Wasshuber:
    "Konvergenzverbesserung der Lösung linearer Gleichungssysteme mit Hilfe polynomialer Prekonditionierer";
    Betreuer/in(nen): S. Selberherr, O. Heinreichsberger, M. Stiftinger; Institut für Mikroelektronik, 1993.

  119. Autor/in: Magdalena Weger
    Andere beteiligte Person: Tibor Grasser, E360

    M. Weger:
    "Elektrische Charakteriserung von SiC Trench MOSFETs mittels DLTS and Admittanz Spektroskopie";
    Betreuer/in(nen): T. Grasser; E360, 2021; Abschlussprüfung: 17.06.2021.

  120. Autor/in: Roland Franz Wehofer
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    R. Wehofer:
    "Flexibler 2-4-Baum Basierter Gittergenerator für BAMBI- und Delaunay-Gitter";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1995.

  121. Autor/in: Christoph Weichselbaum
    Andere beteiligte Personen: Erasmus Langer, E360; Thomas Binder, E360

    C. Weichselbaum:
    "Erstellung eines Objektorientierten Finite Octtrees";
    Betreuer/in(nen): E. Langer, T. Binder; Institut für Mikroelektronik, 1999.

  122. Autor/in: Andreas Weihe, E360
    Andere beteiligte Person: Erasmus Langer, E360

    A. Weihe:
    "Evaluierung und Implementierung von Kommunikations-Interfaces für SIESTA";
    Betreuer/in(nen): E. Langer; Institut für Mikroelektronik, 2008; Abschlussprüfung: 28.11.2008.

  123. Autor/in: Josef Weinbub, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Rene Heinzl, E360

    J. Weinbub:
    "Adaptive Mesh Generation";
    Betreuer/in(nen): E. Langer, R. Heinzl; Institut für Mikroelektronik, 2009; Abschlussprüfung: 09.10.2009.

  124. Autor/in: Wilfried Wessner, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Thomas Binder, E360

    W. Wessner:
    "Jump and Walk - Ein Punkt-Lokalisierungs-Algorithmus für Komplexe Dreidimensionale Tetraeder-Gitter-Strukturen";
    Betreuer/in(nen): E. Langer, T. Binder; Institut für Mikroelektronik, 2002.

  125. Autor/in: Karl Wimmer, E360
    Andere beteiligte Personen: Siegfried Selberherr, E360; Erasmus Langer, E360

    K. Wimmer:
    "Numerische Berechnung der Schwellspannung in MOS-Strukturen";
    Betreuer/in(nen): S. Selberherr, E. Langer; Institut für Allgemeine Elektrotechnik und Elektronik, 1987.

  126. Autor/in: Christoph Wittine
    Andere beteiligte Personen: Siegfried Selberherr, E360; Gerhard Schrom, E360

    C. Wittine:
    "Generation of Two-Dimensional Device Structures from One-Dimensional Topography, Profile and Layout Data";
    Betreuer/in(nen): S. Selberherr, G. Schrom; Institut für Mikroelektronik, 1998.

  127. Autor/in: Stefanie Wolf, E134-05
    Andere beteiligte Person: Hans Kosina, E360

    S. Wolf:
    "Monte-Carlo Raytracing for Thermal Transport Simulation";
    Betreuer/in(nen): H. Kosina; Institut für Mikroelektronik, 2013; Abschlussprüfung: 13.06.2013.

  128. Autor/in: Gernot Zankl
    Andere beteiligte Personen: Siegfried Selberherr, E360; Hans Kosina, E360

    G. Zankl:
    "Über die Erzeugung von Gitterstützpunkten in Dreidimensionalen Geometrien";
    Betreuer/in(nen): S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997.

  129. Autor/in: Wolfhard Zisser, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Hajdin Ceric, E360

    W. H. Zisser:
    "Untersuchung an Kupferkristallen unter Zuhilfenahme von MD Simulationen";
    Betreuer/in(nen): E. Langer, H. Ceric; Institut für Mikroelektronik, 2011; Abschlussprüfung: 12.10.2011.

  130. Autor/in: Martin Zohlhuber, E360
    Andere beteiligte Personen: Erasmus Langer, E360; Andreas Gehring, E360

    M. Zohlhuber:
    "Visualisierung von Simulationsdaten";
    Betreuer/in(nen): E. Langer, A. Gehring; Institut für Mikroelektronik, 2003.


Wissenschaftliche Berichte


  1. Autor/innen: Oskar Baumgartner, E360; Otmar Ertl, E360; Wolfgang Gös, E360; Franz Stimpfl, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    O. Baumgartner, O. Ertl, W. Gös, F. Stimpfl, T. Windbacher, S. Selberherr:
    "VISTA Status Report December 2008";
    2008; 28 S.

  2. Autor/innen: Oskar Baumgartner, E360; Otmar Ertl, E360; Roberto Orio, E360; Paul-Jürgen Wagner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    O. Baumgartner, O. Ertl, R. Orio, P.-J. Wagner, T. Windbacher, S. Selberherr:
    "VISTA Status Report December 2009";
    2009; 35 S.

  3. Autor/innen: Oskar Baumgartner, E360; Wolfgang Gös, E360; Alexandre Nentchev, E360; Franz Stimpfl, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    O. Baumgartner, W. Gös, A. Nentchev, F. Stimpfl, V. Sverdlov, S. Selberherr:
    "VISTA Status Report December 2007";
    2007; 32 S.

  4. Autor/innen: Thomas Binder, E360; Johann Cervenka, E360; Andreas Gehring, E360; Christian Harlander, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Binder, J. Cervenka, A. Gehring, C. Harlander, C. Heitzinger, S. Selberherr:
    "VISTA Status Report June 2001";
    2001; 24 S.

  5. Autor/innen: Thomas Binder, E360; Markus Gritsch, E360; Clemens Heitzinger, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    T. Binder, M. Gritsch, C. Heitzinger, V. Palankovski, S. Selberherr:
    "VISTA Status Report December 2000";
    2000; 41 S.

  6. Autor/innen: Walter Bohmayr, E360; Franz Fasching, E360; Gerhard Rieger, E360; Siegfried Selberherr, E360; Thomas Simlinger, E360

    W. Bohmayr, F. Fasching, G. Rieger, S. Selberherr, T. Simlinger:
    "VISTA Status Report December 1994";
    1994; 26 S.

  7. Autor/innen: Walter Bohmayr, E360; Stefan Halama, E360; Christoph Pichler, E360; Siegfried Selberherr, E360; Thomas Simlinger, E360; Ernst Strasser, E360; Walter Tuppa, E360

    W. Bohmayr, S. Halama, C. Pichler, S. Selberherr, T. Simlinger, E. Strasser, W. Tuppa:
    "VISTA Status Report June 1994";
    1994; 25 S.

  8. Autor/innen: Hajdin Ceric, E360; Siddhartha Dhar, E360; Gerhard Karlowatz, E360; Ling Li, E360; Mahdi Pourfath, E360; Siegfried Selberherr, E360

    H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr:
    "VISTA Status Report June 2007";
    2007; 29 S.

  9. Autor/innen: Hajdin Ceric, E360; Klaus Dragosits, E360; Andreas Gehring, E360; Sergey Smirnov, E360; Vassil Palankovski, E360; Siegfried Selberherr, E360

    H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr:
    "VISTA Status Report December 2002";
    2002; 35 S.

  10. Autor/innen: Hajdin Ceric, E360; Tibor Grasser, E360; Roberto Orio, E360; Mahdi Pourfath, E360; Martin Vasicek, E360; Siegfried Selberherr, E360

    H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr:
    "VISTA Status Report July 2008";
    2008; 38 S.

  11. Autor/innen: Hajdin Ceric, E360; Philipp Paul Hehenberger, E360; Goran Milovanovic, E360; Viktor Sverdlov, E360; Martin Vasicek, E360; Siegfried Selberherr, E360

    H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr:
    "VISTA Status Report June 2009";
    2009; 30 S.

  12. Autor/innen: Hajdin Ceric, E360; Stefan Holzer, E360; Alireza Sheikholeslami, E360; Tesfaye Ayalew, E360; Robert Wittmann, E360; Siegfried Selberherr, E360

    H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr:
    "VISTA Status Report June 2004";
    2004; 28 S.

  13. Autor/innen: Hajdin Ceric, E360; Markus Karner, E360; Alexandre Nentchev, E360; Philipp Schwaha, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    H. Ceric, M. Karner, A. Nentchev, P. Schwaha, E. Ungersböck, S. Selberherr:
    "VISTA Status Report December 2005";
    2005; 29 S.

  14. Autor/innen: Siddhartha Dhar, E360; Ling Li, E360; Mahdi Pourfath, E360; Michael Spevak, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr:
    "VISTA Status Report June 2006";
    2006; 32 S.

  15. Autor/innen: Klaus Dragosits, E360; Tibor Grasser, E360; Hans Kosina, E360; Robert Mlekus, E360; Wolfgang Pyka, E360; Siegfried Selberherr, E360

    K. Dragosits, T. Grasser, H. Kosina, R. Mlekus, W. Pyka, S. Selberherr:
    "VISTA Status Report June 1998";
    1998; 19 S.

  16. Autor/innen: Klaus Dragosits, E360; Tibor Grasser, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    K. Dragosits, T. Grasser, R. Strasser, S. Selberherr:
    "VISTA Status Report June 1999";
    1999; 31 S.

  17. Autor/innen: Klaus Dragosits, E360; Christian Harlander, E360; Robert Kosik, E360; Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    K. Dragosits, C. Harlander, R. Kosik, H. Kosina, M. Nedjalkov, S. Selberherr:
    "VISTA Status Report June 2000";
    2000; 39 S.

  18. Autor/innen: Robert Entner, E360; Rene Heinzl, E360; Christian Hollauer, E360; Alireza Sheikholeslami, E360; Robert Wittmann, E360; Siegfried Selberherr, E360

    R. Entner, R. Heinzl, Ch. Hollauer, A. Sheikholeslami, R. Wittmann, S. Selberherr:
    "VISTA Status Report June 2005";
    2005; 29 S.

  19. Autor/innen: Robert Entner, E360; Rene Heinzl, E360; Alexandre Nentchev, E360; Stephan Enzo Ungersböck, E360; Martin Wagner, E360; Siegfried Selberherr, E360

    R. Entner, R. Heinzl, A. Nentchev, E. Ungersböck, M. Wagner, S. Selberherr:
    "VISTA Status Report December 2006";
    2006; 28 S.

  20. Autor/innen: Franz Fasching, E360; Stefan Halama, E360; Christoph Pichler, E360; Hubert Pimingstorfer; Gerhard Rieger, E360; Gerhard Schrom, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360

    F. Fasching, S. Halama, C. Pichler, H. Pimingstorfer, G. Rieger, G. Schrom, S. Selberherr, M. Stiftinger:
    "VISTA Status Report June 1993";
    1993; 20 S.

  21. Autor/innen: Andreas Gehring, E360; Clemens Heitzinger, E360; Andreas Hössinger, E360; Stephan Enzo Ungersböck, E360; Wilfried Wessner, E360; Siegfried Selberherr, E360

    A. Gehring, C. Heitzinger, A. Hössinger, E. Ungersböck, W. Wessner, S. Selberherr:
    "VISTA Status Report December 2003";
    2003; 29 S.

  22. Autor/innen: Andreas Gehring, E360; Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Stephan Wagner, E360; Wilfried Wessner, E360; Siegfried Selberherr, E360

    A. Gehring, M. Pourfath, E. Ungersböck, S. Wagner, W. Wessner, S. Selberherr:
    "VISTA Status Report December 2004";
    2004; 32 S.

  23. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Report on Coupled NBTI and HC Models for HV Devices";
    Bericht für European Commission; 2008; 24 S.

  24. Autor/in: Tibor Grasser, E360

    T. Grasser:
    "Verification and Validation of the Coupled HCI & NBTI Model for HV Devices";
    Bericht für European Commission; 2010; 20 S.

  25. Autor/innen: Tibor Grasser, E360; Wolfgang Gös, E360; Oliver Triebl, E360; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; Philipp Schwaha, E360; Rene Heinzl, E360; Stefan Holzer, E360; Robert Entner, E360; Stephan Wagner, E360; Franz Schanovsky, E360

    T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky:
    "3 Year Report 2005-2007";
    Bericht für Christian Doppler Laboratory for Technology CAD in Microelectronics; 2007; 34 S.

  26. Autor/innen: Tibor Grasser, E360; Markus Gritsch, E360; Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    T. Grasser, M. Gritsch, C. Heitzinger, A. Hössinger, S. Selberherr:
    "VISTA Status Report December 2001";
    2001; 25 S.

  27. Autor/innen: Tibor Grasser, E360; Andreas Hössinger, E360; Heinrich Kirchauer, E360; Martin Knaipp, E360; Rui Martins, E360; Richard Plasun, E360; Martin Rottinger, E360; Gerhard Schrom, E360; Siegfried Selberherr, E360

    T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr:
    "VISTA Status Report December 1997";
    1997; 36 S.

  28. Autor/innen: Tibor Grasser, E360; Andreas Hössinger, E360; Robert Kosik, E360; Robert Mlekus, E360; Wolfgang Pyka, E360; Michael Stockinger, E360; Siegfried Selberherr, E360

    T. Grasser, A. Hössinger, R. Kosik, R. Mlekus, W. Pyka, M. Stockinger, S. Selberherr:
    "VISTA Status Report December 1999";
    1999; 58 S.

  29. Autor/innen: Tibor Grasser, E360; Markus Karner, E360; Christian Kernstock, E360; Hans Kosina, E360; Oliver Triebl, E360

    T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl:
    "Customized Software Development Report";
    Bericht für Sony; 2010; 22 S.

  30. Autor/innen: Markus Gritsch, E360; Clemens Heitzinger, E360; Jong Mun Park, E360; Robert Klima, E360; Rodrigo Rodriguez-Torres, E360; Siegfried Selberherr, E360

    M. Gritsch, C. Heitzinger, J.M. Park, R. Klima, R. Rodriguez-Torres, S. Selberherr:
    "VISTA Status Report June 2002";
    2002; 44 S.

  31. Autor/innen: D. Grützmacher; Siddhartha Dhar, E360; Goran Milovanovic, E360; Tibor Grasser, E360; Hans Kosina, E360

    D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina:
    "Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits";
    Bericht für European Commission; 2007; 107 S.

  32. Autor/innen: Stefan Halama, E360; Christoph Pichler, E360; Gerhard Rieger, E360; Siegfried Selberherr, E360; Thomas Simlinger, E360; Hannes Stippel, E360; Ernst Strasser, E360

    S. Halama, C. Pichler, G. Rieger, S. Selberherr, T. Simlinger, H. Stippel, E. Strasser:
    "VISTA Status Report December 1993";
    1993; 19 S.

  33. Autor/innen: Christian Hollauer, E360; Alireza Sheikholeslami, E360; Vassil Palankovski, E360; Stephan Wagner, E360; Robert Wittmann, E360; Siegfried Selberherr, E360

    Ch. Hollauer, A. Sheikholeslami, V. Palankovski, S. Wagner, R. Wittmann, S. Selberherr:
    "VISTA Status Report June 2003";
    2003; 36 S.

  34. Autor/innen: Markus Karner, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    M. Karner, O. Baumgartner, H. Kosina:
    "Threshold Voltage Modeling in Strained Si using VSP";
    Bericht für Sony; 2007; 26 S.

  35. Autor/innen: Heinrich Kirchauer, E360; Richard Plasun, E360; Mustafa Radi, E360; Siegfried Selberherr, E360; Rudolf Strasser, E360

    H. Kirchauer, R. Plasun, M. Radi, S. Selberherr, R. Strasser:
    "VISTA Status Report December 1996";
    1996; 30 S.

  36. Autor/innen: Robert Klima, E360; Vassil Palankovski, E360; Mustafa Radi, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    R. Klima, V. Palankovski, M. Radi, R. Strasser, S. Selberherr:
    "VISTA Status Report December 1998";
    1998; 32 S.

  37. Autor/innen: Martin Knaipp, E360; Hans Kosina, E360; Robert Mlekus, E360; Mustafa Radi, E360; Martin Rottinger, E360; Siegfried Selberherr, E360

    M. Knaipp, H. Kosina, R. Mlekus, M. Radi, M. Rottinger, S. Selberherr:
    "VISTA Status Report June 1997";
    1997; 31 S.

  38. Autor/innen: Martin Knaipp, E360; Christoph Pichler, E360; Gerhard Rieger, E360; Martin Rottinger, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360; Rudolf Strasser, E360

    M. Knaipp, C. Pichler, G. Rieger, M. Rottinger, R. Sabelka, S. Selberherr, R. Strasser:
    "VISTA Status Report December 1995";
    1995; 21 S.

  39. Autor/innen: Hans Kosina, E360; Johann Cervenka, E360

    H. Kosina, J. Cervenka:
    "MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems";
    Bericht für European Commission; 2010; 24 S.

  40. Autor/innen: J. Lorenz; T. Clees; E. Bär; Roland Jancke; U. Paschen; Patrick Lang; C. Salzig; Bernhard Klaaßen; Matthias Hauser; Johann Cervenka, E360

    J. Lorenz, T. Clees, E. Bär, R. Jancke, U. Paschen, P. Lang, C. Salzig, B. Klaaßen, M. Hauser, J. Cervenka:
    "Hierarchische Simulation nanoelektronischer Systeme zur Beherrschung von Prozessschwankungen";
    Bericht für Fraunhofer-Gesellschaft; Berichts-Nr. M4, 2010; 79 S.

  41. Autor/innen: J. Lorenz; T. Clees; E. Bär; Roland Jancke; U. Paschen; Patrick Lang; C. Salzig; Bernhard Klaaßen; Matthias Hauser; Johann Cervenka, E360

    J. Lorenz, T. Clees, E. Bär, R. Jancke, U. Paschen, P. Lang, C. Salzig, B. Klaaßen, M. Hauser, J. Cervenka:
    "Hierarchische Simulation nanoelektronischer Systeme zur Beherrschung von Prozessschwankungen";
    Bericht für Fraunhofer-Gesellschaft; Berichts-Nr. M5, 2010; 100 S.

  42. Autor/innen: J. Lorenz; T. Clees; E. Bär; Roland Jancke; U. Paschen; Patrick Lang; C. Salzig; Bernhard Klaaßen; Matthias Hauser; Johann Cervenka, E360

    J. Lorenz, T. Clees, E. Bär, R. Jancke, U. Paschen, P. Lang, C. Salzig, B. Klaaßen, M. Hauser, J. Cervenka:
    "Hierarchische Simulation nanoelektronischer Systeme zur Beherrschung von Prozessschwankungen";
    Bericht für Fraunhofer-Gesellschaft; 2011; 74 S.

  43. Autor/innen: Gottfried Magerl, E354-01; Erasmus Langer, E360

    G. Magerl, E. Langer:
    "TARGET Knowledge Transfer Annual Report";
    Bericht für European Commission; 2006; 39 S.

  44. Autor/innen: Gottfried Magerl, E354-01; Erasmus Langer, E360; Thomas Brazil

    G. Magerl, E. Langer, T. Brazil:
    "TARGET Knowledge Transfer Final Report";
    Bericht für European Commission; 2008; 89 S.

    Zusätzliche Informationen

  45. Autor/innen: Gottfried Magerl, E354-01; Erasmus Langer, E360; Thomas Brazil; P. Colantonio; Sue Ivan

    G. Magerl, E. Langer, T. Brazil, P. Colantonio, S. Ivan:
    "D 3.2.3 TARGET Knowledge Transfer Annual Report";
    Bericht für European Commission; 2007; 79 S.

  46. Autor/innen: Rui Martins, E360; Helmut Puchner, E360; Siegfried Selberherr, E360; Thomas Simlinger, E360; Walter Tuppa, E360

    R. Martins, H. Puchner, S. Selberherr, T. Simlinger, W. Tuppa:
    "VISTA Status Report June 1996";
    1996; 30 S.

  47. Autor/innen: Robert Mlekus, E360; Christoph Pichler, E360; Helmut Puchner, E360; Siegfried Selberherr, E360; Walter Tuppa, E360

    R. Mlekus, C. Pichler, H. Puchner, S. Selberherr, W. Tuppa:
    "VISTA Status Report June 1995";
    1995; 17 S.

  48. Autor/in: Mihail Nedjalkov, E360

    M. Nedjalkov:
    "Verification and Validation of the Coupled HCI & NBTI Model for HV Devices";
    Bericht für European Commission; 2013; 26 S.

  49. Autor/in: Vassil Palankovski, E360

    V. Palankovski:
    "Simulation of Advanced Semiconductor Devices";
    Bericht für FWF Austrian Science Fund; Berichts-Nr. START Project Y247-N13, 2007; 11 S.

  50. Autor/innen: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Simulation of Carbon Nanotube Transistors";
    Bericht für Samsung Advanced Institute of Technology (SAIT); 2007; 42 S.

  51. Autor/innen: Martin Vasicek, E360; Tibor Grasser, E360

    M. Vasicek, T. Grasser:
    "Higher-Order Macroscopic Transport Models";
    Bericht für FWF Austrian Science Fund; Berichts-Nr. P18316-N13, 2007; 2 S.