Publication list for members of
E360 - Institute for Microelectronics
as authors or essentially involved persons
3522 records (1976 - 2022)
The complete list of publications of the Faculty of Electrical Engineering and Information Technology is available from the publication database beginning with the publication year 1996. The database may but need not necessarily contain publications dated earlier than 1996.
Books and Book Editorships
-
N. Arora:
"MOSFET Models for VLSI Circuit Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1993,
ISBN: 978-3-7091-9249-8,
605 pages.
More information
-
W. Benger, R. Heinzl, W. Kapferer, W. Schoor, M. Tyagi, S. Venkataraman, G.-H. Weber (ed.):
"Proceedings of the 4th High-End Visualization Workshop";
Lehmann,
Berlin,
2007,
ISBN: 978-3-86541-216-4;
175 pages.
-
H.C. DeGraaff, F.M. Klassen:
"Compact Transistor Modeling for Circuit Design";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1990,
ISBN: 978-3-7091-9045-6,
351 pages.
More information
-
F. Fasching, S. Halama, S. Selberherr (ed.):
"Technology CAD Systems";
Springer-Verlag, Wien - New York,
1993,
ISBN: 978-3-7091-9317-4;
309 pages.
More information
-
D.K. Ferry, S.M. Goodnick, W. Porod, D. Vasileska, J. Weinbub (ed.):
"Book of Abstracts of the 20th International Workshop on Computational Nanotechnology (IWCN)";
Institute for Microelectronics, TU Wien,
Wien,
2019,
ISBN: 978-3-9504738-0-3;
162 pages.
-
D.K. Ferry, M. Nedjalkov (ed.):
"The Wigner Function in Science and Technology";
IoP Publishing,
Bristol, UK,
2018,
ISBN: 978-0-7503-1671-2;
300 pages.
More information
-
D.K. Ferry, J. Weinbub (ed.):
"Booklet of the 1st International Wigner Workshop";
Institute for Microelectronics, TU Wien,
Wien,
2015,
16 pages.
-
D.K. Ferry, J. Weinbub, S.M. Goodnick (ed.):
"Book of Abstracts of the 3rd International Wigner Workshop";
Institute for Microelectronics, TU Wien,
Wien,
2019,
ISBN: 978-3-9504738-1-0;
56 pages.
-
L. Filipovic, T. Grasser (ed.):
"Miniaturized Transistors";
MDPI,
2019,
ISBN: 978-3-03921-010-7;
202 pages.
More information
-
L. Filipovic, T. Grasser (ed.):
"Miniaturized Transistors, Volume II";
MDPI,
Basel,
2022,
ISBN: 978-3-0365-4169-3;
352 pages.
More information
-
F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet (ed.):
"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
Universidad de Granada,
Granada, Spain,
2018,
ISBN: 978-1-5386-4810-0;
154 pages.
-
T. Grasser (ed.):
"Advanced Device Modeling and Simulation";
World Scientific Publishing Co.,
2003,
ISBN: 9-812-38607-6;
210 pages.
-
T. Grasser (ed.):
"Bias Temperature Instability for Devices and Circuits";
Springer Science+Business Media New York,
2013,
ISBN: 978-1-4614-7908-6;
810 pages.
More information
-
T. Grasser (ed.):
"Hot Carrier Degradation in Semiconductor Devices";
Springer International Publishing,
2014,
ISBN: 978-3-319-08993-5;
517 pages.
More information
-
T. Grasser (ed.):
"Noise in Nanoscale Semiconductor Devices";
Springer Science+Business Media New York,
2020,
ISBN: 978-3-030-37499-0;
729 pages.
More information
-
T. Grasser, S. Selberherr (ed.):
"Simulation of Semiconductor Processes and Devices 2007";
Springer-Verlag, Wien - New York,
Wien,
2007,
ISBN: 978-3-211-72860-4;
460 pages.
More information
-
W. Hänsch:
"The Drift Diffusion Equation and Its Applications in MOSFET Modeling";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1991,
ISBN: 978-3-7091-9097-5,
271 pages.
More information
-
S.-M Hong, A.-T Pham, C. Jungemann:
"Deterministic Solvers for the Boltzmann Transport Equation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2011,
ISBN: 978-3-7091-0777-5,
227 pages.
More information
-
Yu. Illarionov:
"Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
Typography of St-Petersburg State Polytechnical University,
St. Petersburg,
2014,
20 pages.
-
K. Ishibashi, S.M. Goodnick, S. Selberherr, A. Fujiwara (ed.):
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics,
2012,
ISBN: 978-3-901578-25-0;
100 pages.
-
C. Jacoboni, P. Lugli:
"The Monte Carlo Method for Semiconductor Device Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1989,
ISBN: 978-3-7091-7453-1,
356 pages.
More information
-
D. Janes, H. Riechert, T. Machida, J. Conley, J. Weinbub, S.M. Goodnick (ed.):
"Innovative Nanoscale Devices and Systems";
Institute for Microelectronics, TU Wien,
Wien,
2019,
ISBN: 978-0-578-61722-0;
157 pages.
-
B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick (ed.):
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics,
2016,
ISBN: 978-3-901578-30-4;
88 pages.
-
W. Joppich, S. Mijalkovic:
"Multigrid Methods for Process Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1993,
ISBN: 978-3-7091-9255-9,
309 pages.
More information
-
C. Jungemann, B. Meinerzhagen:
"Hierarchical Device Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2003,
ISBN: 978-3-7091-7226-1,
254 pages.
More information
-
K. Kim, J. Weinbub, M. Everitt (ed.):
"Book of Abstracts of the 4th International Wigner Workshop";
Institute for Microelectronics, TU Wien,
Wien,
2021,
ISBN: 978-3-9504738-2-7;
75 pages.
-
R. Klima, S. Selberherr:
"Programmieren in C";
Springer-Verlag, Wien - New York,
Wien,
2003,
ISBN: 978-3-211-40514-7;
354 pages.
More information
-
R. Klima, S. Selberherr:
"Programmieren in C, 2. Auflage";
Springer-Verlag, Wien - New York,
Wien,
2007,
ISBN: 978-3-211-72000-4;
366 pages.
-
R. Klima, S. Selberherr:
"Programmieren in C, 3. Auflage";
Springer-Verlag, Wien - New York,
Wien,
2010,
ISBN: 978-3-7091-0392-0;
366 pages.
More information
-
H. Kosina, S. Selberherr (ed.):
"11th International Workshop on Computational Electronics Book of Abstracts";
Technische Universität Wien, Institut für Mikroelektronik,
Wien,
2006,
ISBN: 3-901578-16-1;
400 pages.
-
E. Langer:
"Programmieren in Fortran";
Springer,
1993,
ISBN: 978-3-211-82446-7.
More information
-
P. Markowich:
"The Stationary Semiconductor Device Equations";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1986,
ISBN: 978-3-211-99937-0,
193 pages.
More information
-
J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed.):
"Advanced CMOS-Compatible Semiconductor Devices 19";
ECS Transactions, The Electrochemical Society, Vol.97, No.5,
2020,
ISBN: 978-1-62332-604-3;
192 pages.
-
J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed.):
"Advanced CMOS-Compatible Semiconductor Devices 18";
ECS Transactions, The Electrochemical Society, Vol.85, No.5,
2018,
ISBN: 978-1-62332-488-9;
230 pages.
-
K. Matsumoto, B. Jonker, J. Weinbub, T. Machida, S. Selberherr, S.M. Goodnick (ed.):
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics,
2017,
ISBN: 978-3-901578-31-1;
243 pages.
-
G. Meller, T. Grasser (ed.):
"Organic Electronics";
Springer-Verlag, Berlin-Heidelberg,
2009,
ISBN: 978-3-642-04537-0;
328 pages.
More information
-
N. Mori, S. Selberherr (ed.):
"16th International Workshop on Computational Electronics Book of Abstracts";
Society for Micro- and Nanoelectronics,
2013,
ISBN: 978-3-901578-26-7;
269 pages.
-
A. Nathan, H. Baltes:
"Microtransducer CAD";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1999,
ISBN: 978-3-7091-7321-3,
427 pages.
More information
-
M. Nedjalkov, I. Dimov, S. Selberherr (ed.):
"Stochastic Approaches to Electron Transport in Micro- and Nanostructures";
Birkhäuser Basel,
2021,
ISBN: 978-3-030-67916-3;
230 pages.
More information
-
Y. Omura, F. Gamiz, H. Ishii, J. A. Martino, B.-Y. Nguyen, J.-P. Raskin, S. Selberherr (ed.):
"Advanced Semiconductor-on-Insulator Technology and Related Physics 15";
ECS Transactions, The Electrochemical Society, Vol.35, No.5,
2011,
ISBN: 978-1-56677-866-4;
333 pages.
-
Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed.):
"Advanced Semiconductor-on-Insulator Technology and Related Physics 16";
ECS Transactions, The Electrochemical Society, Vol.53, No.5,
2013,
ISBN: 978-1-62332-027-0;
220 pages.
-
Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed.):
"Advanced CMOS-Compatible Semiconductor Devices 17";
ECS Transactions, The Electrochemical Society, Vol.66, No.5,
2015,
ISBN: 978-1-62332-238-0;
365 pages.
-
V. Palankovski, R. Quay:
"Analysis and Simulation of Heterostructure Devices";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2004,
ISBN: 978-3-7091-7193-6,
309 pages.
More information
-
P. Pichler:
"Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2004,
ISBN: 978-3-7091-7204-9,
554 pages.
More information
-
L. Polok, M. Sosonkina, W.I. Thacker, J. Weinbub (ed.):
"High Performance Computing";
The Society for Modeling and Simulation International,
San Diego, CA, USA,
2017,
ISBN: 978-1-5108-3822-2;
192 pages.
-
M. Pourfath:
"The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2014,
ISBN: 978-3-7091-1800-9,
256 pages.
More information
-
R. Quay:
"Gallium Nitride Electronics";
in series "Materials Science",
series editor: R. Hull, R.M. Osgood, J. Parisi, H. Warlimont;
Springer-Verlag, Berlin-Heidelberg,
2008,
ISBN: 978-3-540-71890-1,
469 pages.
More information
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A. Schenk:
"Advanced Physical Models for Silicon Device Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1998,
ISBN: 978-3-7091-7334-3,
349 pages.
More information
-
D. Schroeder:
"Modelling of Interface Carrier Transport for Device Simulation";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
1994,
ISBN: 978-3-7091-7368-8,
221 pages.
More information
-
S. Selberherr:
"Analysis and Simulation of Semiconductor Devices";
Springer-Verlag, Wien - New York,
1984,
ISBN: 978-3-7091-8754-8;
294 pages.
More information
-
S. Selberherr (ed.):
"Two Dimensional Modeling of MOS Transistors";
Semiconductor Physics, Inc.,
Auszug aus der Dissertation in englischer Sprache,
1981,
146 pages.
-
S. Selberherr, H. Stippel, R. Strasser (ed.):
"Simulation of Semiconductor Devices and Processes, Vol.5";
Springer-Verlag, Wien - New York,
1993,
ISBN: 978-3-7091-7372-5;
504 pages.
More information
-
V. Sverdlov:
"Strain-Induced Effects in Advanced MOSFETs";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2011,
ISBN: 978-3-7091-0381-4,
252 pages.
More information
-
V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr (ed.):
"2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
IEEE,
2016,
ISBN: 978-1-4673-8608-1;
272 pages.
-
V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr (ed.):
"2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
Society for Micro- and Nanoelectronics,
2016,
ISBN: 978-3-901578-29-8;
166 pages.
-
V. Sverdlov, B. Jonker, K. Ishibashi, S.M. Goodnick, S. Selberherr (ed.):
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics,
2014,
ISBN: 978-3-901578-28-1;
84 pages.
-
V. Sverdlov, S. Selberherr (ed.):
"Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
Solid-State Electronics, Elsevier,
2017,
ISSN: 0038-1101;
206 pages.
-
J. W. Swart, S. Selberherr, A. A. Susin, J. A. Diniz, N. Morimoto (ed.):
"Microelectronics Technology and Devices - SBMICRO 2008";
ECS Transactions, The Electrochemical Society, Vol.14, No.1,
2008,
ISBN: 978-1-56677-646-2;
661 pages.
-
B. Ullmann, G. Artner, I. Hahn, P. Hans, H. Krebs, P. Eder-Neuhauser, R. Zemann (ed.):
"Proceedings VSS 2016 - Vienna young Scientists Symposium";
Book of Abstracts, Dipl.Ing. Heinz A. Krebs,
2352 Gumpoldskirchen,
2016,
ISBN: 978-3-9504017-2-1;
128 pages.
More information
-
M. Waltl (ed.):
"Robust Microelectronic Devices";
MDPI,
2022,
ISBN: 978-3-0365-3337-7;
130 pages.
More information
-
C. Wasshuber:
"Computational Single-Electronics";
in series "Computational Microelectronics",
series editor: S. Selberherr;
Springer-Verlag, Wien - New York,
2001,
ISBN: 978-3-7091-7256-8,
278 pages.
More information
-
L.T. Watson, M. Sosonkina, W.I. Thacker, J. Weinbub, K. Rupp (ed.):
"High Performance Computing";
The Society for Modeling and Simulation International,
San Diego, CA, USA,
2018,
ISBN: 978-1-5108-6016-2;
154 pages.
-
L.T. Watson, J. Weinbub, M. Sosonkina, W.I. Thacker, K. Rupp (ed.):
"High Performance Computing";
The Society for Modeling and Simulation International,
Vista, CA, USA,
2015,
ISBN: 978-1-5108-0101-1;
242 pages.
-
J. Weinbub, M. Baboulin, W.I. Thacker, L. Polok, S. Bhowmick (ed.):
"High Performance Computing";
The Society for Modeling and Simulation International,
Vista, CA, USA,
2016,
ISBN: 978-1-5108-2318-1;
210 pages.
-
J. Weinbub, D.K. Ferry, I. Knezevic, M. Nedjalkov, S. Selberherr (ed.):
"Book of Abstracts of the 2nd International Wigner Workshop";
Institute for Microelectronics, TU Wien,
Wien,
2017,
ISBN: 978-3-200-05129-4;
51 pages.
-
J. Weinbub, B. Jonker, H. Riechert, T. Machida, S.M. Goodnick, S. Selberherr (ed.):
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics,
2018,
ISBN: 978-3-901578-32-8;
167 pages.
-
J. Weinbub, P. Manstetten, S.M. Goodnick (ed.):
"Book of Abstracts of the Workshop on High Performance TCAD";
Institute for Microelectronics, TU Wien,
Wien,
2019,
28 pages.
-
R. Zemann, A. Grill, I. Hahn, H. Krebs, A. Mayr, P. Eder-Neuhauser, B. Ullmann (ed.):
"Proceedings VSS 2015 - Vienna young Scientists Symposium";
Book of Abstracts, Dipl.Ing. Heinz A. Krebs,
2352 Gumpoldskirchen,
2015,
ISBN: 978-3-9504017-07;
182 pages.
Publications in Scientific Journals
-
A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii:
"A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon";
IEEE Transactions on Electron Devices,
41
(1994),
9;
1646
- 1654.
More information
-
L.F. Aguinsky, F. Rodrigues, G. Wachter, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon";
Solid-State Electronics (invited),
191
(2022),
108262-1
- 108262-8.
More information
-
L.F. Aguinsky, G. Wachter, P. Manstetten, F. Rodrigues, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators";
Journal of Micromechanics and Microengineering,
31
(2021),
12;
125003-1
- 125003-9.
More information
-
S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan:
"Impact of Effective Mass on the Scaling Behavior of the fT and fmax of III-V High-Electron-Mobility Transistors";
IEEE Transactions on Nanotechnology,
11
(2012),
6;
1160
- 1173.
-
T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip";
IEEE Transactions on Device and Materials Reliability,
10
(2010),
1;
3
- 8.
-
T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress";
Journal of Applied Physics,
107
(2010),
024508-1
- 024508-8.
-
T. Aichinger, M. Nelhiebel, T. Grasser:
"A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI";
IEEE Transactions on Electron Devices,
56
(2009),
12;
3018
- 3026.
-
T. Aichinger, M. Nelhiebel, T. Grasser:
"Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen";
Applied Physics Letters,
96
(2010),
133511-1
- 133511-3.
-
T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Microelectronics Reliability,
48
(2008),
1178
- 1184.
More information
-
T. Aichinger, M. Nelhiebel, T. Grasser:
"Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures";
Microelectronics Reliability,
53
(2013),
7;
937
- 946.
More information
-
S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov:
"Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues";
IEEE Transactions on Electron Devices,
61
(2014),
5;
1292
- 1298.
More information
-
M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath:
"High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles";
Sensors and Actuators A: Physical,
220
(2014),
213
- 220.
More information
-
M. Asad, S. Salimian, M. Sheikhi, M. Pourfath:
"Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS2 Nanoparticles";
Sensors and Actuators A: Physical,
232
(2015),
285
- 291.
More information
-
M. Asad, M. Sheikhi, M. Pourfath, M. Moradi:
"High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs";
Sensors and Actuators B: Chemical,
210
(2015),
1
- 8.
More information
-
W. Auzinger, H. Hofstätter, O. Koch, M. Quell:
"Adaptive Time Propagation for Time-Dependent Schrödinger Equations";
International Journal of Applied and Computational Mathematics,
7
(2021),
1;
6-1
- 6-14.
More information
-
A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
"Investigation of Novel Silicon PV Cells of a Lateral Type";
Silicon,
7
(2015),
3;
283
- 291.
More information
-
T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability,
44
(2004),
9-11;
1473
- 1478.
More information
-
T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability,
43
(2003),
9-11;
1889
- 1894.
More information
-
T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum,
483-485
(2005),
845
- 848.
More information
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T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
"Numerical Analysis of SiC Merged PiN Schottky Diodes";
Materials Science Forum,
483-485
(2005),
949
- 952.
More information
-
N.S. Azar, M. Pourfath:
"Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents";
The Journal of Physical Chemistry C,
120
(2016),
30;
16804
- 16814.
More information
-
E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
Microelectronic Engineering,
137
(2015),
141
- 145.
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A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
"Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain";
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control,
UFFC-33
(1986),
3;
315
- 317.
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M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub:
"Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution";
Applied Sciences (invited),
9
(2019),
7;
1344-1
- 1344-10.
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M. Ballicchia, J. Weinbub, M. Nedjalkov:
"Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects";
Nanoscale,
10
(2018),
48;
23037
- 23049.
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A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov:
"Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer";
Semiconductors (Physics of Semiconductor Devices),
53
(2019),
6;
833
- 837.
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O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
Solid-State Electronics,
54
(2010),
143
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O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina:
"VSP - A Quantum-Electronic Simulation Framework";
Journal of Computational Electronics,
12
(2013),
4;
701
- 721.
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O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
IEEE Transactions on Nanotechnology,
10
(2011),
4;
737
- 743.
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M. Benam, M. Ballicchia, J. Weinbub, S. Selberherr, M. Nedjalkov:
"A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling";
Journal of Computational Electronics,
20
(2021),
2;
775
- 784.
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M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Interface Effects in Ultra-Scaled MRAM Cells";
Solid-State Electronics,
194
(2022),
108373-1
- 108373-4.
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J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
"Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum,
963
(2019),
175
- 179.
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J. Berens, G. Pobegen, T. Grasser:
"Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum,
1004
(2020),
652
- 658.
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J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
"NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
IEEE Transactions on Electron Devices,
66
(2019),
11;
4692
- 4697.
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R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
"Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
IEEE Transactions on Device and Materials Reliability,
19
(2019),
1;
133
- 139.
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M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices,
61
(2014),
9;
3103
- 3110.
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T. Binder, C. Heitzinger, S. Selberherr:
"A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
23
(2004),
6;
814
- 822.
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T. Binder, A. Hössinger, S. Selberherr:
"Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
22
(2003),
9;
1204
- 1214.
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W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
17
(1998),
12;
1236
- 1243.
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W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Trajectory Split Method for Monte Carlo Simulation of Ion Implantation";
IEEE Transactions on Semiconductor Manufacturing,
8
(1995),
4;
402
- 407.
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V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
"Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
Physics of Low-dimensional Structures,
5-6
(2003),
99
- 108.
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H. Brand, S. Selberherr:
"Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)";
IEICE Transactions on Electronics,
E77-C
(1994),
2;
179
- 186.
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H. Brand, S. Selberherr:
"Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor";
IEEE Transactions on Electron Devices,
42
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12;
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H. Brech, T. Grave, S. Selberherr:
"Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
IEEE Transactions on Electron Devices,
47
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10;
1957
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H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
IEEE Transactions on Electron Devices,
44
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11;
1822
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E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger:
"Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy";
IEEE Transactions on Nanotechnology,
16
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2;
245
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M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl:
"A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon";
COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering,
6
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1;
37
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A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
IEICE Transactions on Electronics,
E83-C
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8;
1259
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V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
"Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics";
Microelectronics Reliability,
54
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11;
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V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
"Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
IEEE Transactions on Very Large Scale Integration (VLSI) Systems,
PP
(2013),
99.
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L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina:
"Method for Predicting fT for Carbon Nanotube FETs";
IEEE Transactions on Nanotechnology,
Vol. 4
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6;
699
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H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
IEEE Transactions on Device and Materials Reliability,
9
(2009),
1;
9
- 19.
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H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Microelectronics Reliability (invited),
52
(2012),
8;
1532
- 1538.
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H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Microstructural Impact on Electromigration: A TCAD Study";
Facta universitatis - series: Electronics and Energetics,
27
(2014),
1;
1
- 11.
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H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
IEICE Transactions on Electronics (invited),
E86-C
(2003),
3;
421
- 426.
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H. Ceric, S. Selberherr:
"Electromigration in Submicron Interconnect Features of Integrated Circuits";
Materials Science and Engineering R-Reports,
71
(2011),
5-6;
53
- 86.
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H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Microelectronics Reliability,
42
(2002),
9-11;
1457
- 1460.
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H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
"Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects";
ECS Journal of Solid State Science and Technology,
10
(2021),
3;
035003-1
- 035003-11.
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H. Ceric, H. Zahedmanesh, K. Croes:
"Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods";
Microelectronics Reliability,
100-101
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113362.
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J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Proceedings of SPIE,
6589
(2007),
452
- 460.
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J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems,
14
(2008),
4-5;
665
- 671.
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J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
"Three-Dimensional Device Optimization by Green's Functions";
European Physical Journal - Applied Physics,
21
(2003),
103
- 106.
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J. Cervenka, R. Kosik, M. Nedjalkov:
"A Deterministic Wigner Approach for Superposed States";
Journal of Computational Electronics,
20
(2021),
6;
2104
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J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Solid-State Electronics,
65-66
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81
- 87.
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J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
"Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
25
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10;
2118
- 2128.
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Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez:
"Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness";
Journal of Applied Physics,
120
(2016),
5;
053904-1
- 053904-5.
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R. Coppeta, D. Holec, H. Ceric, T. Grasser:
"Evaluation of Dislocation Energy in Thin Films";
Philosophical Magazine,
95
(2015),
2;
186
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S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh:
"Transistors Based on Two-Dimensional Materials for Future Integrated Circuits";
Nature Electronics,
4
(2021),
11;
786
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A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov:
"Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics";
Journal of Vacuum Science & Technology B,
29
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01A501-1
- 01A501-5.
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J. Demel, S. Selberherr:
"Application of the Complete Tableau Approach in JANAP";
Electrosoft,
2
(1991),
6;
243
- 260.
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J. Demel, S. Selberherr:
"VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran";
Angewandte Informatik,
6
(1984),
244
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D. Demidov, K. Ahnert, K. Rupp, P. Gottschling:
"Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries";
SIAM Journal on Scientific Computing,
35
(2013),
5;
453
- 472.
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S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices,
53
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12;
3054
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S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices,
52
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4;
527
- 533.
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S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology,
6
(2007),
1;
97
- 100.
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G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
"A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing";
Advances in Computational Mathematics,
45
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4;
2029
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P. Dickinger:
"New Models of High Voltage DMOS Devices for Circuit Simulation";
Electrosoft,
1
(1990),
4;
298
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I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Boundary Conditions and the Wigner Equation Solution";
Journal of Computational Electronics,
14
(2015),
4;
859
- 863.
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N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath:
"A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons";
IEEE Transactions on Electron Devices,
61
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1;
23
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K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Journal of the Korean Physical Society,
35
(1999),
92;
104
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K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Thin Films";
Radiation Effects and Defects in Solids,
156
(2001),
1-4;
157
- 161.
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K. Dragosits, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
IEEE Transactions on Electron Devices,
48
(2001),
2;
316
- 322.
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F. Ducry, D. Waldhör, T. Knobloch, M. Csontos, J. Olalla, J. Leuthold, T. Grasser, M. Luisier:
"An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride";
npj 2D Materials and Applications,
6
(2022),
58.
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A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide";
Microelectronic Engineering,
147
(2015),
141
- 144.
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A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
Physical Review Letters,
114
(2015),
11;
115503-1
- 115503-5.
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A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
"Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
Physical Review B,
92
(2015),
1;
014107-1
- 014107-11.
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A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger:
"Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO";
Physical Review B,
98
(2018),
6;
064102.
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M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari:
"Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain";
Physical Review B,
91
(2015),
11;
1154121
- 1154128.
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P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics";
Physica Status Solidi - Rapid Research Letters,
11
(2017),
7;
1700102-1
- 1700102-5.
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P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov:
"Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition";
Journal of Computational Electronics,
14
(2015),
1;
151
- 162.
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J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
IEEE Journal of the Electron Devices Society (invited),
9
(2021),
456
- 463.
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J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
"Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
Proceedings of SPIE (invited),
12157
(2022),
1215708-1
- 1215708-14.
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J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement learning to reduce failures in SOT-MRAM switching";
Microelectronics Reliability (invited),
135
(2022),
114570;
1
- 5.
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J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Microelectronics Reliability,
126
(2021),
114231-1
- 114231-5.
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J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Proceedings of SPIE (invited),
11805
(2021),
1180519-1
- 1180519-8.
More information
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R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Microelectronics Reliability,
47
(2007),
4-5;
697
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O. Ertl, S. Selberherr:
"A Fast Level Set Framework for Large Three-Dimensional Topography Simulations";
Computer Physics Communications,
180
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8;
1242
- 1250.
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O. Ertl, S. Selberherr:
"Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation";
Microelectronic Engineering,
87
(2010),
1;
20
- 29.
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T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz:
"Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures ";
Concurrency and Computation: Practice and Experience,
13
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10;
1
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F. Fasching, W. Tuppa, S. Selberherr:
"VISTA - The Data Level";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
13
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1;
72
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S. Fatemeh, M. Moradinasab, U. Schwalke, L. Filipovic:
"Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications";
ACS Omega,
6
(2021),
29;
18770
- 18781.
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M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
"The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
Crystals (invited),
10
(2020),
12;
1143-1
- 1143-14.
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M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser:
"On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices";
IEEE Transactions on Electron Devices,
68
(2021),
1;
236
- 243.
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D.K. Ferry, M. Nedjalkov, J. Weinbub, M. Ballicchia, I. Welland, S. Selberherr:
"Complex Systems in Phase Space";
Entropy (invited),
22
(2020),
10;
1103-1
- 1103-19.
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D.K. Ferry, J. Weinbub, M. Nedjalkov, S. Selberherr:
"A Review of Quantum Transport in Field-Effect Transistors";
Semiconductor Science and Technology (invited),
37
(2022),
4;
043001-1
- 043001-32.
More information
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L. Filipovic:
"A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration";
Microelectronics Reliability,
97
(2019),
38
- 52.
More information
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L. Filipovic:
"Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters";
Microelectronics Reliability,
123
(2021),
114219-1
- 114219-14.
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L. Filipovic, A. Lahlalia:
"Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology";
Journal of the Electrochemical Society,
165
(2018),
16;
862
- 879.
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L. Filipovic, S. Selberherr:
"A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework";
Microelectronic Engineering,
107
(2013),
23
- 32.
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L. Filipovic, S. Selberherr:
"Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors";
Nanomaterials (invited),
12
(2022),
1651.
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L. Filipovic, S. Selberherr:
"Microstructure and Granularity Effects in Electromigration";
IEEE Journal of the Electron Devices Society (invited),
9
(2021),
476
- 483.
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L. Filipovic, S. Selberherr:
"Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors";
Sensors,
15
(2015),
4;
7206
- 7227.
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L. Filipovic, S. Selberherr:
"Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
IEEE Transactions on Device and Materials Reliability,
16
(2016),
4;
483
- 495.
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L. Filipovic, S. Selberherr:
"Stress in Three-Dimensionally Integrated Sensor Systems";
Microelectronics Reliability,
61
(2016),
3
- 10.
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L. Filipovic, S. Selberherr:
"The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
Microelectronics Reliability,
54
(2014),
9-10;
1953
- 1958.
More information
-
L. Filipovic, S. Selberherr:
"Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors";
Materials (invited),
12
(2019),
15;
2410-1
- 2410-37.
More information
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L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
"Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques";
Microelectronic Engineering,
117
(2014),
57
- 66.
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L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework";
Engineering Letters (invited),
21
(2013),
4;
224
- 240.
-
L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications";
IEEE Transactions on Semiconductor Manufacturing,
27
(2014),
2;
269
- 277.
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L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
Microelectronics Reliability,
55
(2015),
9-10;
1843
- 1848.
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S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Proceedings of SPIE (invited),
11470
(2020),
50
- 56.
More information
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S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
Solid-State Electronics (invited),
186
(2021),
108103.
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S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
IEEE Journal of the Electron Devices Society (invited),
8
(2020),
1249
- 1256.
More information
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C. Fischer, G. Nanz, S. Selberherr:
"Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas";
Computer Methods in Applied Mechanics and Engineering,
110
(1993),
1-2;
17
- 24.
More information
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P. Fleischmann, W. Pyka, S. Selberherr:
"Mesh Generation for Application in Technology CAD";
IEICE Transactions on Electronics (invited),
E82-C
(1999),
6;
937
- 947.
-
P. Fleischmann, S. Selberherr:
"Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD";
IEEE Journal of Technology Computer Aided Design,
1
(1997),
8;
1
- 38.
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S. Foster, M. Thesberg, N. Neophytou:
"Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites";
Materials Today: Proceedings,
8
(2019),
690
- 695.
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S. Foster, M. Thesberg, N. Neophytou:
"Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations";
Physical Review B,
96
(2017),
19;
195425-1
- 195425-12.
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J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken:
"BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic";
Microelectronics Reliability,
52
(2012),
1932
- 1935.
More information
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J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
"NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
IEEE Transactions on Device and Materials Reliability (invited),
13
(2013),
4;
497
- 506.
More information
-
J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI";
IEEE Transactions on Electron Devices,
60
(2013),
1;
396
- 404.
More information
-
J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken:
"Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs";
IEEE Electron Device Letters,
33
(2012),
6;
779
- 781.
-
J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken:
"Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs";
Microelectronic Engineering,
109
(2013),
250
- 256.
More information
-
J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
"On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
Microelectronic Engineering,
88
(2011),
7;
1388
- 1391.
More information
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J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues";
IEEE Transactions on Electron Devices,
60
(2013),
1;
405
- 412.
-
J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI";
IEEE Transactions on Device and Materials Reliability,
19
(2019),
2;
268
- 274.
More information
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A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich:
"Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices,
30
(1983),
9;
1070
- 1082.
More information
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F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices,
48
(2001),
9;
1878
- 1884.
-
A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski:
"Nonstationary Effects of the Space Charge in Semiconductor Structures";
Journal of Applied Physics,
105
(2009),
074501-1
- 074501-6.
More information
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A. Garcia-Barrientos, V. Palankovski:
"Numerical Simulations of Amplification of Space Charge Waves in n-InP Films";
Materials Science and Engineering B,
176
(2011),
17;
1368
- 1372.
More information
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A. Garcia-Barrientos, V. Palankovski:
"Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity";
Applied Physics Letters,
98
(2011),
072110-1
- 072110-3.
More information
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A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics,
46
(2002),
10;
1545
- 1551.
More information
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A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters,
39
(2003),
8;
691
- 692.
More information
-
A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics,
92
(2002),
10;
6019
- 6027.
More information
-
A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability,
43
(2003),
9-11;
1495
- 1500.
More information
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A. Gehring, H. Kosina:
"Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method";
Journal of Computational Electronics,
4
(2005),
1-2;
67
- 70.
-
A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Journal of Computational Electronics,
2
(2003),
2-4;
219
- 223.
More information
-
A. Gehring, S. Selberherr:
"Evolution of Current Transport Models for Engineering Applications";
Journal of Computational Electronics,
3
(2004),
3-4;
149
- 155.
More information
-
A. Gehring, S. Selberherr:
"Gate Current Modeling for MOSFETs";
Journal of Computational and Theoretical Nanoscience (invited),
2
(2005),
1;
26
- 44.
More information
-
A. Gehring, S. Selberherr:
"Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
IEEE Transactions on Device and Materials Reliability,
4
(2004),
3;
306
- 319.
More information
-
A. Gehring, S. Selberherr:
"Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
Microelectronics Reliability,
44
(2004),
9-11;
1879
- 1884.
More information
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N. Ghobadi, M. Pourfath:
"A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures";
IEEE Transactions on Electron Devices,
61
(2014),
1;
186
- 192.
More information
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N. Ghobadi, M. Pourfath:
"On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors";
Journal of Applied Physics,
116
(2014),
18;
1845061
- 1845067.
More information
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N. Ghobadi, M. Pourfath:
"Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing";
IEEE Electron Device Letters,
36
(2015),
3;
280
- 282.
More information
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M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath:
"Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design";
IEEE Transactions on Electron Devices,
61
(2014),
12;
4000
- 4006.
More information
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J. Ghosh, D. Osintsev, V. Sverdlov:
"Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
Journal of Computational Electronics,
18
(2019),
1;
28
- 36.
More information
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J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
Journal of Nano Research,
39
(2016),
34
- 42.
More information
-
J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Microelectronic Engineering,
147
(2015),
89
- 91.
More information
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J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Journal of Applied Physics,
115
(2014),
17;
17C503-1
- 17C503-3.
More information
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J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection in a Semiconductor Through a Space-Charge Layer";
Solid-State Electronics,
101
(2014),
116
- 121.
More information
-
K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke:
"NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling";
IEEE Transactions on Electron Devices,
66
(2019),
4;
1662
- 1668.
More information
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M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein:
"Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures";
Nano Letters,
16
(2016),
6;
3507
- 3518.
More information
-
L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"Accelerating Flux Calculations Using Sparse Sampling";
Micromachines (invited),
9
(2018),
11;
1
- 17.
More information
-
H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz:
"Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique";
Computers and the Humanities,
16
(1982),
69
- 84.
More information
-
W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
IEEE Transactions on Device and Materials Reliability,
8
(2008),
3;
491
- 500.
More information
-
W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Solid State Phenomena (invited),
178-179
(2011),
473
- 482.
More information
-
W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser:
"Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence";
Microelectronics Reliability,
87
(2018),
286
- 320.
More information
-
B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics,
43
(1999),
9;
1791
- 1795.
More information
-
T. Grasser:
"Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation";
Physica A: Statistical Mechanics and its Applications,
349
(2005),
221
- 258.
More information
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T. Grasser:
"Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities";
Microelectronics Reliability (invited),
52
(2012),
1;
39
- 70.
More information
-
T. Grasser, W. Gös, B. Kaczer:
"Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models";
IEEE Transactions on Device and Materials Reliability (invited),
8
(2008),
1;
79
- 97.
More information
-
T. Grasser, B. Kaczer:
"Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs";
IEEE Transactions on Electron Devices,
56
(2009),
5;
1056
- 1062.
More information
-
T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
Microelectronic Engineering (invited),
86
(2009),
7-9;
1876
- 1882.
-
T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel:
"The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps";
IEEE Transactions on Electron Devices (invited),
58
(2011),
11;
3652
- 3666.
-
T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
"Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
Journal of Applied Physics,
97
(2005),
9;
093710-1
- 093710-12.
More information
-
T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
Journal of Computational Electronics,
3
(2004),
3-4;
183
- 187.
More information
-
T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics,
90
(2001),
5;
2389
- 2396.
More information
-
T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters,
80
(2002),
4;
613
- 615.
More information
-
T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics,
91
(2002),
6;
3869
- 3879.
More information
-
T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems,
13
(2003),
3;
873
- 901.
More information
-
T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik (invited),
444
(2002),
28
- 41.
-
T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik (invited),
444
(2002),
18
- 27.
-
T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics,
90
(2001),
12;
6165
- 6171.
More information
-
T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters,
79
(2001),
12;
1900
- 1902.
More information
-
T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer:
"Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors";
Physical Review B,
82
(2010),
245318-1
- 245318-10.
More information
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T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
"NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
IEEE Transactions on Electron Devices,
61
(2014),
11;
3586
- 3593.
More information
-
T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology,
5
(2002),
4;
339
- 354.
-
T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices,
48
(2001),
7;
1421
- 1427.
More information
-
T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal,
31
(2000),
11-12;
873
- 881.
More information
-
T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Journal of Telecommunications and Information Technology (invited),
7
(2007),
2;
92
- 102.
-
T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B,
20
(2002),
1;
407
- 413.
More information
-
T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE,
91
(2003),
2;
251
- 274.
More information
-
T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
IEEE Transactions on Device and Materials Reliability,
8
(2008),
3;
526
- 535.
More information
-
A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser:
"Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs";
Solid-State Electronics,
19
(2019),
156;
41
- 47.
More information
-
M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics,
45
(2001),
5;
621
- 627.
More information
-
M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices,
49
(2002),
10;
1814
- 1820.
More information
-
N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard:
"Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications";
Electronics,
10
(2021),
14;
1718-1
- 1718-16.
More information
-
T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Physica B: Condensed Matter,
314
(2002),
1-4;
301
- 304.
More information
-
P. Habas:
"A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility";
Solid-State Electronics,
33
(1990),
7;
923
- 933.
More information
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P. Habas:
"The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs";
Microelectronic Engineering,
28
(1995),
1-4;
171
- 174.
More information
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P. Habas, J. Faricelli:
"Investigation of the Physical Modeling of the Gate-Depletion Effect";
IEEE Transactions on Electron Devices,
39
(1992),
6;
1496
- 1500.
More information
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P. Habas, S. Selberherr:
"Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices";
Informacije Midem - Journal of Microelectronics Electronic Components and Materials,
20
(1990),
4;
185
- 188.
-
P. Habas, S. Selberherr:
"On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling";
Solid-State Electronics,
33
(1990),
12;
1539
- 1544.
More information
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M. Hackel, M. Faber, H. Markum:
"Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks";
Physical Review D,
46
(1992),
12;
5648
- 5654.
-
M. Hackel, M. Faber, H. Markum, M. Müller:
"Chiral Interface for QCD with Dynamical Quarks";
International Journal of Modern Physics C,
3
(1992),
5;
961
- 970.
More information
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T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach";
Solid-State Electronics (invited),
193
(2022),
108269-1
- 108269-7.
More information
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W. Hänsch, S. Selberherr:
"MINIMOS 3: A MOSFET Simulator that Includes Energy Balance";
IEEE Transactions on Electron Devices,
34
(1987),
5;
1074
- 1078.
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"The Viennese Integrated System for Technology CAD Applications";
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S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr:
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
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S. Halama, S. Selberherr:
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Electron Technology (invited),
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C. Harlander, R. Sabelka, S. Selberherr:
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A. Hartwig, E. Boman, R. Falgout, P. Ghysels, M. Heroux, X. Li, L. McInnes, R. Mills, S. Rajamanickam, K. Rupp, B. Smith, I. Yamazaki, U. Meier Yang:
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Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Microelectronics Reliability,
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O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar:
"Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation";
SIAM Journal of Scientific and Statistical Computing,
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R. Heinzl, P. Schwaha:
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Science of Computer Programming,
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R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
International Journal of Parallel, Emergent and Distributed Systems,
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6;
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C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation,
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C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
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C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
"Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
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3;
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C. Heitzinger, Ch. Ringhofer:
"A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation";
Journal of Computational Electronics,
3
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1;
33
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C. Heitzinger, Ch. Ringhofer, S. Selberherr:
"Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities";
Communications in Mathematical Sciences,
5
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4;
779
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C. Heitzinger, S. Selberherr:
"An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
Proceedings of SPIE,
4228
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279
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C. Heitzinger, S. Selberherr:
"An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
Microelectronics Journal,
33
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61
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C. Heitzinger, S. Selberherr:
"On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
Microelectronics Journal,
35
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C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process";
IEEE Transactions on Electron Devices,
51
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C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
"A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
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10;
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Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl:
"Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies";
Crystals,
11
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9;
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G. Hobler, E. Langer, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation with Spatial Moments";
Solid-State Electronics,
30
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445
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G. Hobler, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
8
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5;
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G. Hobler, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation Induced Point Defects";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
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A. Hössinger, E. Langer, S. Selberherr:
"Parallelization of a Monte Carlo Ion Implantation Simulator";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
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5;
560
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S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Proceedings of SPIE,
5837
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380
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S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal,
35
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10;
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S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
"Comparison of Deposition Models for a TEOS LPCVD Process";
Microelectronics Reliability,
47
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4-5;
623
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M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Strain Induced Mobility Modulation in Single-Layer MoS2";
Journal of Physics D: Applied Physics,
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M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( M = Mo, W ; X = S , Se)";
IEEE Transactions on Electron Devices,
62
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10;
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M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Very Large Strain Gauges Based on Single Layer MoSe2 and WSe2 for Sensing Applications";
Applied Physics Letters,
107
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25;
253503-1
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R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm:
"Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing";
IEEE Transactions on Device and Materials Reliability,
10
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1;
47
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R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel:
"Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing";
Measurement Science & Technology,
21
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5;
55702
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Y. Illarionov, T. Knobloch, T. Grasser:
"Inorganic Molecular Crystals for 2D Electronics";
Nature Electronics,
4
(2022),
12;
870
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Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
"Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
Nature Electronics,
2
(2019),
230
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Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
"Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
2D Materials,
6
(2019),
4;
045004.
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Yu. Illarionov, A. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler:
"Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)";
Technical Physics Letters,
44
(2018),
12;
1188
- 1191.
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Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
"An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs";
Japanese Journal of Applied Physics,
53
(2014),
04EC22-1
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Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
"Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
IEEE Transactions on Electron Devices,
62
(2015),
9;
2730
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Yu. Illarionov, T. Knobloch, T. Grasser:
"Crystalline Insulators for Scalable 2D Nanoelectronics";
Solid-State Electronics,
185
(2021),
108043-1
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Yu. Illarionov, T. Knobloch, T. Grasser:
"Native High-k Oxides for 2D Transistors";
Nature Electronics,
3
(2020),
442
- 443.
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Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser:
"Insulators for 2D Nanoelectronics: The Gap to Bridge";
Nature Communications,
11
(2020),
3385.
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Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials,
4
(2017),
2;
025108-1
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Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials,
3
(2016),
3;
035004-1
- 035004-10.
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Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
Applied Physics Letters,
105
(2014),
14;
1435071
- 1435075.
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Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
IEEE Transactions on Electron Devices,
62
(2015),
11;
3876
- 3881.
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Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
"Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
IEEE Electron Device Letters,
38
(2017),
12;
1763
- 1766.
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Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
"Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes";
Journal of Applied Physics,
115
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223706-1
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Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
"Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer";
Thin Solid Films,
545
(2013),
580
- 583.
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Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
"TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
Current Applied Physics,
15
(2015),
78
- 83.
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Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano,
10
(2016),
10;
9543
- 9549.
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Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications,
1
(2017),
1;
23-1
- 23-7.
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Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics,
55
(2016),
4S;
04EP03.
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M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
"Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces";
Physical Review B,
100
(2019),
195302.
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M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
Physical Review Applied,
16
(2021),
1;
014026 -1
- 014026 -24.
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M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities";
IEEE Transactions on Electron Devices,
67
(2020),
8;
3315
- 3322.
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M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
"On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
Japanese Journal of Applied Physics,
55
(2016),
4S;
1
- 6.
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M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
"Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
IEEE Transactions on Electron Devices,
66
(2019),
1;
241
- 248.
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X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza:
"Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects";
Advanced Functional Materials,
30
(2019),
18;
1901971.
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X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
"Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
Nano Energy,
30
(2016),
494
- 502.
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N. Jorstad, S. Fiorentini, W.J. Loch, W. Goes, S. Selberherr, V. Sverdlov:
"Finite Element Modeling of Spin-Orbit Torques";
Solid-State Electronics,
194
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108323-1
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W. Jüngling, E. Guerrero, S. Selberherr:
"On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation";
COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering,
3
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2;
79
- 105.
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W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
IEEE Transactions on Electron Devices,
32
(1985),
2;
156
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W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
IEEE Journal of Solid-State Circuits,
20
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1;
76
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C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium";
IEEE Transactions on Electron Devices,
52
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11;
2404
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M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik:
"Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region";
IEEE Electron Device Letters,
34
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3;
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B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
"Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
IEEE Electron Device Letters,
36
(2015),
4;
300
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B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
"Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
Journal of Vacuum Science & Technology B,
35
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1;
01A109-1
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B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser:
"A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability";
Microelectronics Reliability (invited),
81
(2018),
186
- 194.
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B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
Solid-State Electronics,
125
(2016),
52
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B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Journal of Vacuum Science & Technology B (invited),
29
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01AB01-1
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B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
IEEE Electron Device Letters,
31
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5;
411
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B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken:
"Gate Current Random Telegraph Noise and Single Defect Conduction";
Microelectronic Engineering,
109
(2013),
123
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B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks";
Journal of Vacuum Science & Technology B,
27
(2009),
1;
459
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G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
VLSI Design,
6
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1-4;
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G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Materials Science Forum,
258-263
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939
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G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics,
83
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6;
3096
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M. Kampl, H. Kosina:
"The Backward Monte Carlo Method for Semiconductor Device Simulation";
Journal of Computational Electronics,
17
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4;
1492
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H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina:
"Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method";
Journal of Electronic Materials,
42
(2013),
7;
2091
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H. Karamitaheri, N. Neophytou, H. Kosina:
"Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires";
Journal of Applied Physics,
115
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024302_1
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H. Karamitaheri, N. Neophytou, H. Kosina:
"Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation";
Journal of Applied Physics,
113
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20;
204305-1
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H. Karamitaheri, N. Neophytou, H. Kosina:
"Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires";
Journal of Electronic Materials,
1
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H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina:
"Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons";
Journal of Applied Physics,
111
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5;
054501-1
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H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
"Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method";
Journal of Computational Electronics (invited),
11
(2012),
1;
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H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons";
IEEE Transactions on Electron Devices,
60
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7;
2142
- 2147.
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H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices";
Journal of Applied Physics,
110
(2011),
5;
054506-1
- 054506-6.
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H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou:
"Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons";
Physical Review B,
91
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16;
165410-1
- 165410-15.
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H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina:
"Graphene-Based Antidots for Thermoelectric Applications";
Journal of the Electrochemical Society,
158
(2011),
12;
K213
- K216.
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G.G. Kareva, M. I. Vexler, Yu. Illarionov:
"Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
Microelectronic Engineering,
109
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270
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G. Karlowatz, W. Wessner, H. Kosina:
"Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
Mathematics and Computers in Simulation,
79
(2008),
972
- 979.
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M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
"A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Journal of Computational Electronics,
6
(2007),
1-3;
179
- 182.
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M. Karner, A. Gehring, H. Kosina:
"Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
Journal of Computational Electronics,
5
(2006),
161
- 165.
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M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP - A Gate Stack Analyzer";
Microelectronics Reliability,
47
(2007),
4-5;
704
- 708.
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W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl:
"BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts";
Microelectronics Journal,
21
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5;
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W. Kausel, H. Pötzl, G. Nanz, S. Selberherr:
"Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor";
Solid-State Electronics,
32
(1989),
9;
685
- 709.
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K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi:
"Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain";
IEEE Transactions on Electron Devices,
60
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8;
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N. Khalil, J. Faricelli, D. Bell, S. Selberherr:
"The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling";
IEEE Electron Device Letters,
16
(1995),
1;
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N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
"Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
Journal of Vacuum Science & Technology B,
14
(1996),
1;
224
- 230.
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S. Khan, A. Shah, S. Chouhan, N. Gupta, J. Pandey, S. Vishvakarma:
"A Symmetric D Flip-Flop Based PUF with Improved Uniqueness";
Microelectronics Reliability,
106
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113595.
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S. Khan, A. Shah, N. Gupta, S. Chouhan, J. Pandey, S. Vishvakarma:
"An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications";
Microelectronics Journal,
92
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104605.
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S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Materials Science Forum,
483-485
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793
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Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev:
"A Numerical Study of Transport and Shot Noise in 2D Hopping";
Journal of Physics: Condensed Matter,
18
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1999
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Y. Kinkhabwala, V. Sverdlov, K. Likharev:
"A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport";
Journal of Physics: Condensed Matter,
18
(2006),
2013
- 2027.
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H. Kirchauer, S. Selberherr:
"Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
16
(1997),
12;
1431
- 1438.
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H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulation";
IEEE Journal of Technology Computer Aided Design,
1
(1997),
6;
1
- 37.
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H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination";
Proceedings of SPIE,
3334
(1998),
764
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M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, T. Ortlepp:
"Transport of Charge Carriers along Dislocations in Si and Ge";
Physica Status Solidi A,
216
(2019),
17;
1900287.
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X. Klemenschits, S. Selberherr, L. Filipovic:
"Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures";
Computer Methods in Applied Mechanics and Engineering,
386
(2021),
114196-1
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X. Klemenschits, S. Selberherr, L. Filipovic:
"Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review";
Micromachines (invited),
9
(2018),
12;
631-1
- 631-31.
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M. Knaipp, W. Kanert, S. Selberherr:
"Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
Solid-State Electronics,
44
(2000),
7;
1135
- 1143.
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T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
"Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning";
Nature Electronics,
5
(2022),
356
- 366.
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T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
"The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
Nature Electronics,
4
(2021),
2;
98
- 108.
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T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"A Physical Model for the Hysteresis in MoS2 Transistors";
IEEE Journal of the Electron Devices Society,
6
(2018),
1;
972
- 978.
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T. Knobloch, S. Selberherr, T. Grasser:
"Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials";
Nanomaterials (invited),
12
(2022),
3548.
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C. Köpf, H. Kosina, S. Selberherr:
"Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
Solid-State Electronics,
41
(1997),
8;
1139
- 1152.
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R. Kosik, J. Cervenka, H. Kosina:
"Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation";
Journal of Computational Electronics,
20
(2021),
6;
2052
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R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr:
"On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
19
(2000),
11;
1233
- 1240.
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H. Kosina:
"A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis";
IEEE Transactions on Electron Devices,
46
(1999),
6;
1196
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H. Kosina:
"Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations";
Physica Status Solidi A,
163
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2;
475
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H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
International Journal of High Speed Electronics and Systems,
17
(2007),
3;
475
- 484.
More information
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H. Kosina:
"Wigner function approach to nano device simulation";
International Journal of Computational Science and Engineering,
2
(2006),
3/4;
100
- 118.
More information
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H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics,
1
(2002),
3;
371
- 374.
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H. Kosina, M. Harrer:
"A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
VLSI Design,
6
(1998),
1-4;
205
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H. Kosina, G. Kaiblinger-Grujin:
"Ionized-Impurity Scattering of Majority Electrons in Silicon";
Solid-State Electronics,
42
(1998),
3;
331
- 338.
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H. Kosina, E. Langer, S. Selberherr:
"Device Modelling for the 1990s";
Microelectronics Journal (invited),
26
(1995),
2-3;
217
- 233.
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H. Kosina, M Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model";
Monte Carlo Methods and Applications,
10
(2004),
3-4;
359
- 368.
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H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
International Journal of High Speed Electronics and Systems (invited),
13
(2003),
13;
727
- 769.
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H. Kosina, M. Nedjalkov:
"The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices";
Mathematics and Computers in Simulation,
55
(2001),
93
- 102.
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H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
Journal of Applied Physics,
87
(2000),
9;
4308
- 4314.
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H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Journal of Computational Electronics,
2
(2003),
2-4;
147
- 151.
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H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Mathematics and Computers in Simulation,
62
(2003),
3-6;
367
- 375.
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H. Kosina, M. Nedjalkov, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. I. Theory";
Journal of Applied Physics,
93
(2003),
6;
3553
- 3563.
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H. Kosina, M. Nedjalkov, S. Selberherr:
"Theory of the Monte Carlo Method for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices,
47
(2000),
10;
1898
- 1908.
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H. Kosina, S. Selberherr:
"A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
13
(1994),
2;
201
- 210.
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H. Kosina, S. Selberherr:
"Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors";
Japanese Journal of Applied Physics,
29
(1990),
12;
L2283
- L2285.
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H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
International Journal of High Speed Electronics and Systems,
16
(2006),
1;
115
- 136.
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H. Kosina, C. Troger:
"SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands";
VLSI Design,
8
(1998),
1-4;
489
- 493.
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T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat:
"High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs";
Microelectronic Engineering,
84
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9-10;
2063
- 2066.
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J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl:
"Self-Heating in GaN Transistors Designed for High-Power Operation";
IEEE Transactions on Electron Devices,
61
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10;
3429
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J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski:
"Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors";
Japanese Journal of Applied Physics,
51
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054102-1
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A. Lahlalia, L. Filipovic, S. Selberherr:
"Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices";
IEEE Sensors Journal,
18
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5;
1960
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A. Lahlalia, O. Le Neel, R. Shankar, S.-Y. Kam, L. Filipovic:
"Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors";
Journal Of Microelectromechanical Systems,
27
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3;
529
- 537.
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A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
"Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices";
Sensors,
19
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2;
374-1
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E. Langer:
"Fundamental Analysis of Surface Acoustic Wave Propagation";
Archiv für Elektronik und Übertragungstechnik,
44
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3;
225
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E. Langer:
"Fundamental Analysis of Surface Acoustic Wave Propagation";
International Journal of Engineering Science,
29
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3;
331
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E. Langer:
"Special Issue on "Semiconductor devices and electronic circuit design"";
Electrosoft,
1
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4.
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E. Langer, S. Selberherr, H. Mader:
"A Numerical Analysis of Bulk-Barrier Diodes";
Solid-State Electronics,
25
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4;
317
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E. Langer, S. Selberherr, H. Mader:
"Numerische Analyse der Bulk-Barrier Diode";
Archiv für Elektronik und Übertragungstechnik,
36
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2;
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E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
"Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
Sensors and Actuators,
4
(1983),
1;
71
- 76.
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E. Leitner, S. Selberherr:
"Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
17
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7;
561
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P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser:
"Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop";
IEEE Transactions on Device and Materials Reliability,
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3;
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C. Lenz, P. Manstetten, L.F. Aguinsky, F. Rodrigues, A. Hössinger, J. Weinbub:
"Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations";
Solid-State Electronics (invited),
200
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10258.
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C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub:
"Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
Solid-State Electronics (invited),
191
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108258-1
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L. Li, G. Meller, H. Kosina:
"Analytical Conductivity Model for Doped Organic Semiconductors";
Journal of Applied Physics,
101
(2007),
033716;
1
- 4.
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L. Li, G. Meller, H. Kosina:
"Carrier Concentration Dependence of the Mobility in Organic Semiconductors";
Synthetic Metals,
157
(2007),
243
- 246.
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L. Li, G. Meller, H. Kosina:
"Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes";
Applied Physics Letters,
91
(2007),
17;
1
- 3.
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L. Li, G. Meller, H. Kosina:
"Influence of Traps on Charge Transport in Organic Semiconductors";
Solid-State Electronics,
51
(2007),
445
- 448.
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L. Li, G. Meller, H. Kosina:
"Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors";
Microelectronics Journal,
38
(2006),
1;
47
- 51.
More information
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W.J. Loch, S. Fiorentini, N. Jorstad, W. Goes, S. Selberherr, V. Sverdlov:
"Double Reference Layer STT-MRAM Structures with Improved Performance";
Solid-State Electronics,
194
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108335-1
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J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr:
"Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results";
IEEE Transactions on Electron Devices (invited),
58
(2011),
8;
2227
- 2234.
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J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr:
"Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology";
IEEE Transactions on Electron Devices (invited),
58
(2011),
8;
2218
- 2226.
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B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
"Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids";
Journal of Electronic Materials,
43
(2014),
10;
3812
- 3816.
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A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
"Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires";
Nano Letters,
10
(2010),
3204
- 3208.
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J. Machek, S. Selberherr:
"A Novel Finite-Element Approach to Device Modeling";
IEEE Transactions on Electron Devices,
30
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9;
1083
- 1092.
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H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
Journal of Superconductivity and Novel Magnetism,
26
(2013),
5;
1745
- 1749.
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H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
Solid-State Electronics,
84
(2013),
191
- 197.
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H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
IEEE Transactions on Magnetics,
49
(2013),
12;
5620
- 5628.
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H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
Advanced Materials Research - Print/CD,
854
(2014),
89
- 95.
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A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
IEEE Electron Device Letters,
40
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10;
1579
- 1582.
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A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
IEEE Electron Device Letters,
40
(2019),
6;
870
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A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
"Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach";
Micromachines,
11
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7;
675.
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A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics,
48
(2012),
4;
1289
- 1292.
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A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters,
5
(2011),
12;
420
- 422.
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A. Makarov, V. Sverdlov, S. Selberherr:
"Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
Microelectronics Reliability (invited),
52
(2012),
4;
628
- 634.
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A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
International Journal of High Speed Electronics and Systems (invited),
23
(2014),
3&4;
1450014-1
- 1450014-15.
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A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
Journal of Vacuum Science & Technology B,
29
(2011),
1;
01AD03-1
- 01AD03-5.
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A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
Journal of Computational Electronics,
9
(2010),
3-4;
146
- 152.
More information
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A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Proceedings of SPIE (invited),
8813
(2013),
88132Q-1
- 88132Q-9.
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A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
"Analysis of the Features of Hot-Carrier Degradation in FinFETs";
Semiconductors (Physics of Semiconductor Devices),
52
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10;
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A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"CMOS-Compatible Spintronic Devices: A Review";
Semiconductor Science and Technology (invited),
31
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N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr:
"Performance Assessment of Nanoscale Field Effect Diodes";
IEEE Transactions on Electron Devices,
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P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
Solid-State Electronics (invited),
128
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2;
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P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr:
"Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces";
Procedia Computer Science,
108
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P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr:
"An Asymptotic Analysis of Single-Junction Semiconductor Devices";
MRC Technical Summary Report,
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P. Markowich, Ch. Ringhofer, S. Selberherr:
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MRC Technical Summary Report,
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P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer:
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MRC Technical Summary Report,
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P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini:
"A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations";
IEEE Transactions on Electron Devices,
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P. Markowich, S. Selberherr:
"A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
Matematica Aplicada e Computacional,
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S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher:
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IEEE Electron Device Letters,
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R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
"High-Precision Interconnect Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
17
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11;
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R. Martins, S. Selberherr, F. Vaz:
"A CMOS IC for Portable EEG Acquisition Systems";
IEEE Transactions on Instrumentation and Measurement,
47
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5;
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C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov:
"Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism";
IEEE Electron Device Letters,
40
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10;
1571
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G. Meller, L. Li, S. Holzer, H. Kosina:
"Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
Optical and Quantum Electronics,
38
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12-14;
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G. Meller, S. Selberherr:
"Simulation of Injection Currents into Disordered Molecular Conductors";
Materials Today: Proceedings,
5
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9;
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J.-F. Mennemann, A. Jüngel, H. Kosina:
"Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator";
Journal of Computational Physics,
239
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187
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J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
"Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
IEEE Transactions on Electron Devices,
68
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12;
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J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
"Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
IEEE Transactions on Electron Devices,
68
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12;
6365
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R. Mills, M. Adams, S. Balay, J. Brown, A. Dener, M. Knepley, S. Kruger, H. Morgan, T. Munson, K. Rupp, B. Smith, S. Zampini, H. Zhang, J. Zhang:
"Toward Performance-Portable PETSc for GPU-based Exascale Systems";
Parallel Computing,
108
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G. Milovanovic, O. Baumgartner, H. Kosina:
"On Open Boundary Conditions for Quantum Cascade Structures";
Optical and Quantum Electronics,
41
(2009),
11-13;
921
- 932.
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G. Milovanovic, H. Kosina:
"A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation";
Journal of Computational Electronics,
9
(2010),
3-4;
211
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A. Mojibpour, M. Pourfath, H. Kosina:
"Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers";
Optics Express,
22
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17;
20607
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M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski:
"Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors";
Applied Surface Science,
312
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157
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M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
"Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons";
Journal of Applied Physics,
111
(2012),
7;
074318-1
- 074318-9.
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M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"Numerical Study of Graphene Superlattice-Based Photodetectors";
IEEE Transactions on Electron Devices,
62
(2015),
2;
593
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M. Moradinasab, M. Pourfath, H. Kosina:
"Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
IEEE Journal of Quantum Electronics,
51
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1;
1
- 7.
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M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr:
"Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method";
IEEE Microwave and Wireless Components Letters,
17
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1;
10
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M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr:
"Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method";
IEEE Transactions on Microwave Theory and Techniques,
55
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6;
1322
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M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
"The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI";
Technical Report of IEICE,
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223;
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G. Nanz, P. Dickinger, S. Selberherr:
"Calculation of Contact Currents in Device Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
11
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1;
128
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G. Nanz, W. Kausel, S. Selberherr:
"Self-Adaptive Space and Time Grids in Device Simulation";
International Journal for Numerical Methods in Engineering,
31
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7;
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D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano:
"Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys";
Physica Status Solidi A,
211
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6;
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S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
"On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals";
Journal of Applied Physics,
118
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20;
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S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
"The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO2 Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study";
Journal of Applied Physics,
114
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14;
144302-1
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M. Nedjalkov, S. Ahmed, D. Vasileska:
"A Self-Consistent Event Biasing Scheme for Statistical Enhancement";
Journal of Computational Electronics,
3
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3-4;
305
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M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
Monte Carlo Methods and Applications,
10
(2004),
3-4;
461
- 468.
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M. Nedjalkov, M. Ballicchia, R. Kosik, J. Weinbub:
"Gauge-Invariant Semidiscrete Wigner Theory";
Physical Review A,
106
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052213.
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M. Nedjalkov, I. Dimov, H. Haug:
"Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering";
Physica Status Solidi B - Basic Solid State Physics,
209
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1;
109
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M. Nedjalkov, P. Ellinghaus, J. Weinbub, T. Sadi, A. Asenov, I. Dimov, S. Selberherr:
"Stochastic Analysis of Surface Roughness Models in Quantum Wires";
Computer Physics Communications,
228
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30
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M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters,
80
(2002),
4;
607
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M. Nedjalkov, H. Kosina:
"Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
Mathematics and Computers in Simulation,
55
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1-3;
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M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Journal of Computational Electronics,
1
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1-2;
27
- 31.
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M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Wigner Equation with Quantum Electron-Phonon Interaction";
Microelectronic Engineering,
63
(2002),
1-3;
199
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M. Nedjalkov, H. Kosina, P. Schwaha:
"Device Modeling in the Wigner Picture";
Journal of Computational Electronics,
9
(2010),
3-4;
218
- 223.
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M. Nedjalkov, H. Kosina, S. Selberherr:
"A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
IEICE Transactions on Electronics,
E83-C
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8;
1218
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M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Mathematics and Computers in Simulation,
62
(2003),
3-6;
453
- 461.
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M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Microelectronics Journal,
34
(2003),
5-8;
443
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M. Nedjalkov, H. Kosina, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
Journal of Applied Physics,
93
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6;
3564
- 3571.
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M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
VLSI Design,
13
(2001),
1-4;
405
- 411.
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M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
"Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
Physical Review B,
70
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115319;
1
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M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology,
19
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4;
226
- 228.
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M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska:
"Wigner Quasi-Particle Attributes - An Asymptotic Perspective";
Applied Physics Letters,
102
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16;
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M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha:
"Physical Scales in the Wigner-Boltzmann Equation";
Annals of Physics,
328
(2013),
220
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M. Nedjalkov, D. Vasileska:
"Semi-Discrete 2D Wigner-Particle Approach";
Journal of Computational Electronics,
7
(2008),
3;
222
- 225.
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M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
"Ultrafast Wigner Transport in Quantum Wires";
Journal of Computational Electronics,
6
(2007),
235
- 238.
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M. Nedjalkov, D. Vasileska, I. Dimov, G. Arsov:
"Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices";
Monte Carlo Methods and Applications,
13
(2007),
4;
299
- 331.
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M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski:
"Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires";
Physical Review B,
74
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3;
035311-1
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M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry:
"Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform";
Physical Review B,
99
(2019),
1;
014423-1
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M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
"The Wigner Equation in the Presence of Electromagnetic Potentials";
Journal of Computational Electronics,
14
(2015),
4;
888
- 893.
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H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices";
Journal of Applied Physics,
111
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093512-1
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N. Neophytou, H. Karamitaheri, H. Kosina:
"Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers";
Journal of Computational Electronics,
12
(2013),
4;
611
- 622.
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N. Neophytou, H. Karamitaheri, H. Kosina:
"Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study";
Journal of Electronic Materials,
44
(2015),
6;
1599
- 1605.
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N. Neophytou, S. Kim, G. Klimeck, H. Kosina:
"On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias";
Journal of Applied Physics,
107
(2010),
113701-1
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N. Neophytou, G. Klimeck, H. Kosina:
"Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities";
Journal of Applied Physics,
109
(2011),
053721-1
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N. Neophytou, H. Kosina:
"Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation";
Physical Review B,
84
(2011),
085313-1
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N. Neophytou, H. Kosina:
"Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors";
IEEE Electron Device Letters,
33
(2012),
5;
652
- 654.
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N. Neophytou, H. Kosina:
"Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands";
Solid-State Electronics,
70
(2012),
81
- 91.
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-
N. Neophytou, H. Kosina:
"Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires";
Physical Review B,
83
(2011),
245305-1
- 245305-16.
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N. Neophytou, H. Kosina:
"Gated Si Nanowires for Large Thermoelectric Power Factors";
Applied Physics Letters,
105
(2014),
7;
073119-1
- 5.
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N. Neophytou, H. Kosina:
"Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement";
Applied Physics Letters,
99
(2011),
092110-1
- 092110-3.
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N. Neophytou, H. Kosina:
"Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis";
Nano Letters,
10
(2010),
4913
- 4919.
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N. Neophytou, H. Kosina:
"Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels";
Journal of Applied Physics,
112
(2012),
2;
024305-1
- 024305-6.
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N. Neophytou, H. Kosina:
"Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires";
Journal of Computational Electronics (invited),
11
(2012),
1;
29
- 44.
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N. Neophytou, H. Kosina:
"On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires";
Journal of Electronic Materials,
41
(2012),
6;
1305
- 1311.
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N. Neophytou, H. Kosina:
"Optimizing Thermoelectric Power Factor by Means of a Potential Barrier";
Journal of Applied Physics,
114
(2013),
044315_1
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N. Neophytou, H. Kosina:
"Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport";
Journal of Electronic Materials,
40
(2011),
5;
753
- 758.
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N. Neophytou, M. Thesberg:
"Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor";
Journal of Computational Electronics (invited),
15
(2016),
1;
16
- 26.
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N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model";
Journal of Electronic Materials,
39
(2010),
9;
1902
- 1908.
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N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
"Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems";
Journal of Electronic Materials,
43
(2013),
6;
1896
- 1904.
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N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
"Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si";
Nanotechnology,
24
(2013),
20;
205402.
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M. Noei, M. Moradinasab, M. Fathipour:
"A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors";
Physica E: Low-dimensional Systems and Nanostructures,
44
(2012),
7-8;
1780
- 1786.
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H. Noll, S. Selberherr:
"Zur Entwicklung der Mikroelektronik";
Telematik,
4
(1998),
1;
2
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J.O. Nylander, F. Masszi, S. Selberherr, S. Berg:
"Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity";
Solid-State Electronics,
32
(1989),
5;
363
- 367.
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N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu:
"Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric";
IEEE Journal of the Electron Devices Society,
7
(2019),
1163
- 1169.
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R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Microelectronics Reliability,
51
(2011),
1573
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R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Journal Integrated Circuits and Systems,
4
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2;
67
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R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Journal of Computational Electronics,
7
(2008),
3;
128
- 131.
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R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Microelectronics Reliability,
52
(2012),
1981
- 1986.
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R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability (invited),
50
(2010),
6;
775
- 789.
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R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
"Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
IEEE Journal of the Electron Devices Society,
9
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61
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R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
Micromachines,
12
(2021),
4;
443.
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R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
Solid-State Electronics (invited),
185
(2021),
108075.
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R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
Physica B: Condensed Matter,
578
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R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
Solid-State Electronics,
168
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107730-1
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R. Orio, S. Selberherr, V. Sverdlov:
"Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
Proceedings of SPIE (invited),
11090
(2019),
110903F-1
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F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci:
"Multi-Scale Modelling for Devices and Circuits";
E-Nano Newsletter,
Special Issue April 2012
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31 pages.
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D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
Solid-State Electronics,
90
(2013),
34
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D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana,
42
(2013),
2;
205
- 211.
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D. Osintsev, V. Sverdlov, S. Selberherr:
"Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
Advanced Materials Research - Print/CD,
854
(2014),
29
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D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
Solid-State Electronics,
112
(2015),
46
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D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics,
71
(2012),
25
- 29.
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C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
"Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs";
Applied Physics Letters,
110
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173502;
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- 4.
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V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices,
48
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10;
2331
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V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B,
66
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46
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V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits (invited),
36
(2001),
9;
1365
- 1370.
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V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science,
224
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1-4;
361
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V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
Radiation Effects and Defects in Solids,
156
(2001),
1-4;
261
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V. Palankovski, R. Schultheis, S. Selberherr:
"Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
IEEE Transactions on Electron Devices,
48
(2001),
6;
1264
- 1269.
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V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology (invited),
4
(2004),
1;
15
- 25.
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V. Palankovski, S. Selberherr:
"Micro Materials Modeling in MINIMOS-NT";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems,
7
(2001),
4;
183
- 187.
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V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability (invited),
44
(2004),
6;
889
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V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science,
224
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1-4;
312
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V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin:
"Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs";
Applied Physics Letters,
106
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18;
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P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak:
"Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks";
IEEE Transactions on Electron Devices,
54
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1;
106
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S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During Nanoindentation in Open TSVs";
IEEE Transactions on Device and Materials Reliability,
16
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4;
470
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J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics,
47
(2003),
2;
275
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J.M. Park, R. Klima, S. Selberherr:
"High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
Microelectronics Journal,
35
(2004),
3;
299
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J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics,
48
(2004),
6;
1007
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C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"High-Level TCAD Task Representation and Automation";
IEEE Journal of Technology Computer Aided Design,
1
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5;
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C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools";
IEEE Transactions on Semiconductor Manufacturing,
12
(1999),
1;
76
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P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC-Fabrication Steps";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
4
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4;
384
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P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC-Fabrication Steps";
IEEE Transactions on Electron Devices,
32
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10;
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P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
"Two-Dimensional Coupled Diffusion Modeling";
Physica B: Condensed Matter,
129
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1-3;
187
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R. Plasun, M. Stockinger, S. Selberherr:
"Integrated Optimization Capabilities in the VISTA Technology CAD Framework";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
17
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12;
1244
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G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Microelectronics Reliability,
51
(2011),
1530
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G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum,
778-780
(2014),
959
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G. Pobegen, T. Grasser:
"Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
Materials Science Forum,
740-742
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757
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G. Pobegen, T. Grasser:
"On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
IEEE Transactions on Electron Devices,
60
(2013),
7;
2148
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G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
"Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
IEEE Transactions on Device and Materials Reliability,
99
(2013),
PP;
1
- 8.
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G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
"Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
IEEE Electron Device Letters,
34
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8;
939
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C. Poschalko, S. Selberherr:
"Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads";
IEEE Transactions on Electromagnetic Compatibility,
51
(2009),
1;
18
- 24.
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M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park:
"Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors";
Journal of Applied Physics,
97
(2005),
10;
106103-1
- 106103-3.
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M. Pourfath, H. Kosina:
"Computational Study of Carbon-Based Electronics";
Journal of Computational Electronics,
8
(2009),
3-4;
427
- 440.
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M. Pourfath, H. Kosina:
"Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets";
Journal of Computational and Theoretical Nanoscience,
5
(2008),
6;
1128
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M. Pourfath, H. Kosina:
"The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors";
Nanotechnology,
18
(2007),
42;
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M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Journal of Computational Electronics,
5
(2006),
2-3;
155
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M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Journal of Computational Electronics,
6
(2007),
1-3;
321
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M. Pourfath, H. Kosina, S. Selberherr:
"Geometry Optimization for Carbon Nanotube Transistors";
Solid-State Electronics,
51
(2007),
11-12;
1565
- 1571.
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M. Pourfath, H. Kosina, S. Selberherr:
"Numerical Study of Quantum Transport in Carbon Nanotube Transistors";
Mathematics and Computers in Simulation,
79
(2008),
4;
1051
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M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Transistors";
Journal of Physics: Conference Series,
38
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29
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M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Journal of Physics: Conference Series,
109
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012029;
1
- 5.
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M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling CNTFETs";
Journal of Computational Electronics,
6
(2007),
1-3;
243
- 246.
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M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Microelectronic Engineering,
81
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2-4;
428
- 433.
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M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Journal of Computational Electronics,
4
(2005),
1-2;
75
- 78.
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H. Puchner, R. Castagnetti, W. Pyka:
"Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions";
Microelectronic Engineering,
53
(2000),
429
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H. Puchner, S. Selberherr:
"An Advanced Model for Dopant Diffusion in Polysilicon";
IEEE Transactions on Electron Devices,
42
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10;
1750
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K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
"Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
IEEE Transactions on Electron Devices (invited),
66
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11;
4604
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K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
"Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation";
IEEE Transactions on Device and Materials Reliability,
18
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2;
144
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K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser:
"Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation";
IEEE Transactions on Electron Devices,
65
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11;
4764
- 4771.
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K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser:
"An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps";
IEEE Transactions on Electron Devices,
66
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11;
4623
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W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
"Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
18
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12;
1741
- 1749.
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W. Pyka, H. Kirchauer, S. Selberherr:
"Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
Microelectronic Engineering,
53
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1-4;
449
- 452.
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W. Pyka, R. Martins, S. Selberherr:
"Optimized Algorithms for Three-Dimensional Cellular Topography Simulation";
IEEE Journal of Technology Computer Aided Design,
1
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20;
1
- 36.
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R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices,
48
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2;
210
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R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing,
3
(2000),
1-2;
149
- 155.
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M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
"Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
Journal of Computational and Applied Mathematics,
392
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113488-1
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M. Quell, V. Suvorov, A. Hössinger, J. Weinbub:
"Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD";
IEEE Transactions on Electron Devices,
68
(2021),
11;
5430
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H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari:
"Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity";
Journal of Applied Physics,
110
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6;
064320-1
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M. Radi, E. Leitner, S. Selberherr:
"AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
IEEE Journal of Technology Computer Aided Design,
1
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17;
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K. Raleva, D. Vasileska, S.M. Goodnick, M. Nedjalkov:
"Modeling Thermal Effects in Nanodevices";
IEEE Transactions on Electron Devices,
55
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6;
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G. Raut, A. Shah, V. Sharma, G. Rajput, S. Vishvakarma:
"A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture";
Circuits Systems and Signal Processing,
39
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4681
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M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee:
"Electronic Properties of Dislocations";
Solid State Phenomena,
242
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141
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M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner:
"Impact of Defect-Induced Strain on Device Properties";
Advanced Engineering Materials,
18
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12;
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P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"Diagonal-Transition Quantum Cascade Detector";
Applied Physics Letters,
105
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091108;
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H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides";
IEEE Transactions on Device and Materials Reliability,
9
(2009),
2;
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T. Reiter, X. Klemenschits, L. Filipovic:
"Impact of Plasma Induced Damage on the Fabrication of 3D NAND Flash Memory";
Solid-State Electronics (invited),
192
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G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
Materials Science Forum,
924
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671
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G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
Materials Science Forum,
897
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143
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G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique";
IEEE Transactions on Electron Devices,
25
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4;
1419
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G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum,
858
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481
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Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
"Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
SIAM Journal on Applied Mathematics,
64
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6;
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Ch. Ringhofer, S. Selberherr:
"Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
MRC Technical Summary Report,
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"Analysis of Split-Drain MAGFETs";
IEEE Transactions on Electron Devices,
51
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12;
2237
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G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
"Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
Microelectronics Reliability,
54
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9-10;
2310
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K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser:
"New Insights on the PBTI Phenomena in SiON pMOSFETs";
Microelectronics Reliability,
52
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9-10;
1891
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B. Ruch, M. Jech, G. Pobegen, T. Grasser:
"Applicability of Shockley-Read-Hall Theory for Interface States";
IEEE Transactions on Electron Devices,
68
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4;
2092
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B. Ruch, G. Pobegen, T. Grasser:
"Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping";
IEEE Transactions on Electron Devices,
67
(2020),
10;
4092
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B. Ruch, G. Pobegen, T. Grasser:
"Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs";
IEEE Transactions on Electron Devices,
68
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4;
1804
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F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr:
"Transformation Invariant Local Element Size Specification";
Applied Mathematics and Computation,
267
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195
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F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr:
"The Meshing Framework ViennaMesh for Finite Element Applications";
Journal of Computational and Applied Mathematics,
270
(2014),
166
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K. Rupp:
"High-Level Manipulation of OpenCL-Based Subvectors and Submatrices";
Procedia Computer Science,
9
(2012),
1857
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K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
Journal of Computational Physics,
229
(2010),
8750
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K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
"A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
Journal of Computational Electronics,
15
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3;
939
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K. Rupp, S. Selberherr:
"The Economic Limit to Moore's Law";
IEEE Transactions on Semiconductor Manufacturing,
24
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1;
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K. Rupp, S. Selberherr:
"The Economic Limit to Moore´s Law";
Proceedings of the IEEE,
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3;
351
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K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Proceedings in Applied Mathematics and Mechanics,
14
(2014),
1;
963
- 964.
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-
K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
"ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
SIAM Journal on Scientific Computing,
38
(2016),
5;
S412
- S439.
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-
K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
"Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
ACM Transactions on Mathematical Software,
43
(2016),
2;
11:1
- 11:27.
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-
J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance";
Applied Physics Letters,
96
(2010),
22;
223509-1
- 223509-3.
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G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
"Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
Microelectronics Reliability (invited),
85
(2018),
1;
49
- 65.
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-
R. Sabelka, S. Selberherr:
"A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures";
Microelectronics Journal,
32
(2001),
2;
163
- 171.
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-
T. Sadi, C. Medina-Bailon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
"Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors";
Materials,
12
(2019),
1;
124-1
- 124-11.
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-
F. Safari, M. Moradinasab, M. Fathipour, H. Kosina:
"Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study";
Applied Surface Science,
464
(2019),
153
- 161.
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A. Saleh, H. Ceric, H. Zahedmanesh:
"Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model";
Journal of Applied Physics,
129
(2021),
12;
125102-1
- 125102-17.
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P. Sanvale, N. Gupta, V. Neema, A. Shah, S. Vishvakarma:
"An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ";
Microelectronics Journal,
92
(2019),
104611.
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F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
"A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
Journal of Computational Electronics,
11
(2012),
3;
218
- 224.
More information
-
F. Schanovsky, W. Gös, T. Grasser:
"An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT";
Journal of Computational Electronics (invited),
9
(2010),
3-4;
135
- 140.
More information
-
F. Schanovsky, W. Gös, T. Grasser:
"Multiphonon Hole Trapping from First Principles";
Journal of Vacuum Science & Technology B,
29
(2011),
1;
01A201-1
- 01A201-5.
More information
-
C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
"Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
IEEE Transactions on Electron Devices,
68
(2021),
8;
4016
- 4021.
More information
-
G. Schrom, De Vivek, S. Selberherr:
"VLSI Performance Metric Based on Minimum TCAD Simulations";
IEEE Journal of Technology Computer Aided Design,
1
(1998),
12;
1
- 29.
More information
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G. Schrom, C. Pichler, T. Simlinger, S. Selberherr:
"On the Lower Bounds of CMOS Supply Voltage";
Solid-State Electronics,
39
(1996),
4;
425
- 430.
More information
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G. Schrom, A. Stach, S. Selberherr:
"An Interpolation Based MOSFET Model for Low-Voltage Applications";
Microelectronics Journal,
29
(1998),
8;
529
- 534.
More information
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A. Schütz, S. Selberherr, H. Pötzl:
"A Two-Dimensional Model of the Avalanche Effect in MOS Transistors";
Solid-State Electronics,
25
(1982),
3;
177
- 183.
More information
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A. Schütz, S. Selberherr, H. Pötzl:
"Analysis of Breakdown Phenomena in MOSFET's";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
CAD-1
(1982),
2;
77
- 85.
More information
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A. Schütz, S. Selberherr, H. Pötzl:
"Modeling MOS-Transistors in the Avalanche Breakdown Regime";
Transactions on Computer Simulation (invited),
1
(1984),
1;
1
- 14.
-
A. Schütz, S. Selberherr, H. Pötzl:
"Temperature Distribution and Power Dissipation in MOSFETs";
Solid-State Electronics,
27
(1984),
4;
394
- 395.
More information
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P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
International Journal of Parallel, Emergent and Distributed Systems,
24
(2009),
6;
539
- 549.
More information
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P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr:
"Decoherence Effects in the Wigner Function Formalism";
Journal of Computational Electronics,
12
(2013),
3;
388
- 396.
More information
-
B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"A bi-functional quantum cascade device for same-frequency lasing and detection";
Applied Physics Letters,
101
(2012),
1911091
- 1911094.
More information
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N. Sefidmooye Azar, M. Pourfath:
"A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites";
IEEE Transactions on Electron Devices,
62
(2015),
5;
1584
- 1589.
More information
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S. Selberherr:
"Computer für Wissenschaft und Forschung";
Österreichische Hochschulzeitung (invited),
5
(1988),
9
- 10.
-
S. Selberherr:
"Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik";
Österreichische Hochschulzeitung (invited),
7
(1988),
25.
-
S. Selberherr:
"Device Modeling and Physics";
Physica Scripta (invited),
T35
(1991),
293
- 298.
More information
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S. Selberherr:
"Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren";
E&I Elektrotechnik und Informationstechnik (invited),
115
(1998),
7/8;
344
- 348.
More information
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S. Selberherr:
"MOS Device Modeling at 77K";
IEEE Transactions on Electron Devices,
36
(1989),
8;
1464
- 1474.
More information
-
S. Selberherr:
"Process and Device Modeling for VLSI";
Microelectronics Reliability (invited),
24
(1984),
2;
225
- 257.
More information
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S. Selberherr:
"Process and Device Modeling for VLSI";
Microelectronics Journal,
16
(1985),
6;
56
- 57.
More information
-
S. Selberherr:
"Process Modeling";
Microelectronic Engineering,
9
(1989),
1-4;
605
- 610.
More information
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S. Selberherr:
"Technology Computer-Aided Design";
South African Journal of Physics (invited),
16
(1993),
1/2;
1
- 5.
-
S. Selberherr, E. Guerrero:
"Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals";
Solid-State Electronics,
24
(1981),
6;
591
- 593.
More information
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S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
"The Evolution of the MINIMOS Mobility Model";
Archiv für Elektronik und Übertragungstechnik,
44
(1990),
3;
161
- 172.
-
S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
"The Evolution of the MINIMOS Mobility Model";
Solid-State Electronics,
33
(1990),
11;
1425
- 1436.
More information
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S. Selberherr, E. Langer:
"Three Dimensional Process and Device Modeling";
Microelectronics Journal (invited),
20
(1989),
1-2;
113
- 127.
More information
-
S. Selberherr, E. Langer:
"Three Dimensional Process and Device Modeling";
Microelectronics Reliability,
30
(1990),
3;
624.
More information
-
S. Selberherr, Ch. Ringhofer:
"Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
3
(1984),
1;
52
- 64.
More information
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S. Selberherr, A. Schütz, H. Pötzl:
"Investigation of Parameter Sensitivity of Short Channel MOSFETs";
Solid-State Electronics,
25
(1982),
2;
85
- 90.
More information
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S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
IEEE Transactions on Electron Devices,
27
(1980),
8;
1540
- 1550.
More information
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S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
IEEE Journal of Solid-State Circuits,
15
(1980),
4;
605
- 615.
More information
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S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)";
Elektronikschau,
9
(1980),
18
- 23.
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S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)";
Elektronikschau,
10
(1980),
54
- 58.
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S. Selberherr, A. Schütz, H. Pötzl:
"Two-Dimensional MOS Transistor Modelling";
European Electronics (invited),
1
(1981),
3;
20
- 30.
-
S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar:
"On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers";
Computer Physics Communications,
67
(1991),
1;
145
- 156.
More information
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S. Selberherr, V. Sverdlov:
"About electron transport and spin control in semiconductor devices";
Solid-State Electronics (invited),
197
(2022),
108443.
More information
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J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov:
"Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches";
Physica A: Statistical Mechanics and its Applications,
398
(2014),
194
- 198.
More information
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J. M. Sellier, M. Nedjalkov, I. Dimov:
"An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism";
Physics Reports,
577
(2015),
1
- 34.
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J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"A Benchmark Study of the Wigner Monte Carlo Method";
Monte Carlo Methods and Applications,
20
(2014),
1;
43
- 51.
More information
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J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"A Comparison of Approaches for the Solution of the Wigner Equation";
Mathematics and Computers in Simulation,
107
(2015),
108
- 119.
More information
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J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"Decoherence and Time Reversibility: The Role of Randomness at Interfaces";
Journal of Applied Physics,
114
(2013),
17;
174902-1
- 174902-7.
More information
-
A. Shah, N. Gupta, M. Waltl:
"High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs";
Analog Integrated Circuits and Signal Processing,
109
(2021),
657
- 671.
More information
-
A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl:
"Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit";
Microelectronics Reliability,
107
(2020),
113617.
More information
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A. Shah, M. Waltl:
"Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM";
Electronics,
9
(2020),
2;
256-1
- 256-12.
More information
-
A. Shah, M. Waltl:
"Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits";
International Journal Of Numerical Modelling-Electronic Networks Devices And Fields,
34
(2021),
3;
e2854-1
- e2854-13.
More information
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P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics,
115
(2016),
Part B;
185
- 191.
More information
-
P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser:
"Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach";
IEEE Electron Device Letters,
38
(2017),
2;
160
- 163.
More information
-
P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices,
62
(2015),
6;
1811
- 1818.
More information
-
P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability,
55
(2015),
9-10;
1427
- 1432.
More information
-
A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr:
"Simulation of Void Formation in Interconnect Lines";
Proceedings of SPIE,
5117
(2003),
445
- 452.
More information
-
A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
"Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
Journal of Physics: Conference Series,
61
(2007),
1051
- 1055.
More information
-
T. Simlinger, H. Brech, T. Grave, S. Selberherr:
"Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
IEEE Transactions on Electron Devices,
44
(1997),
5;
700
- 707.
More information
-
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide";
IEEE Transactions on Electron Devices,
65
(2018),
2;
674
- 679.
More information
-
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
Journal of Applied Physics,
120
(2016),
13;
135705-1
- 135705-8.
More information
-
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Materials Science Forum,
924
(2018),
192
- 195.
More information
-
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation";
Journal of Physical Chemistry A,
121
(2017),
46;
8791
- 8798.
More information
-
V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
Solid-State Electronics (invited),
128
(2017),
2;
135
- 140.
More information
-
V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
Journal of Applied Physics,
123
(2018),
23;
235701-1
- 235701-7.
More information
-
A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
Microelectronics Reliability,
53
(2013),
1602
- 1605.
More information
-
S. Smirnov, H. Kosina:
"Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates";
Solid-State Electronics (invited),
48
(2004),
1325
- 1335.
More information
-
S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics,
94
(2003),
9;
5791
- 5799.
More information
-
S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
IEICE Transactions on Electronics,
E86-C
(2003),
3;
350
- 356.
-
S. Soleimani Kahnoj, S. Touski, M. Pourfath:
"The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons";
Applied Physics Letters,
105
(2014),
10;
1035021
- 1035024.
More information
-
X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza:
"Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide";
Applied Physics Letters,
111
(2017),
8;
083107-1
- 083107-4.
More information
-
G. Span, M. Wagner, T. Grasser, L. Holmgren:
"Miniaturized TEG with Thermal Generation of Free Carriers";
Physica Status Solidi - Rapid Research Letters,
1
(2007),
6;
241
- 243.
More information
-
M. Spevak, T. Grasser:
"Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
26
(2007),
8;
1408
- 1416.
-
B. Stampfer, F. Schanovski, T. Grasser, M. Waltl:
"Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors";
Micromachines (invited),
11
(2020),
4;
446-1
- 446-11.
More information
-
B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
"Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
IEEE Transactions on Device and Materials Reliability (invited),
20
(2020),
2;
251
- 257.
More information
-
B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
ACS Nano,
12
(2018),
6;
5368
- 5375.
More information
-
Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause:
"Consistent Low-Field Mobility Modeling for Advanced MOS Devices";
Solid-State Electronics,
112
(2015),
37
- 45.
More information
-
Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
Solid-State Electronics,
70
(2012),
73
- 80.
More information
-
A. Starkov, O. Pakhomov, I. Starkov:
"Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions";
Ferroelectrics,
427
(2012),
1;
78
- 83.
More information
-
A. Starkov, O. Pakhomov, I. Starkov:
"Solid-State Cooler: New Opportunities";
Ferroelectrics,
430
(2012),
1;
108
- 114.
More information
-
A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
Ferroelectrics,
442
(2013),
1;
10
- 17.
More information
-
A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model";
JETP Letters,
91
(2010),
10;
507
- 511.
-
A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field";
Technical Physics Letters,
79
(2011),
12;
1139
- 1141.
More information
-
A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them";
Journal of Experimental and Theoretical Physics,
116
(2013),
6;
987
- 994.
More information
-
A. S. Starkov, I. Starkov:
"Domain Wall Motion for Slowly Varying Electric Field";
Ferroelectrics,
442
(2013),
1;
1
- 9.
More information
-
I. Starkov, H. Enichlmair:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs";
Journal of Vacuum Science & Technology B,
31
(2013),
1;
01A118-1
- 01A118-7.
More information
-
I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B,
29
(2011),
01AB09-1
- 01AB09-8.
More information
-
I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena,
178-179
(2011),
267
- 272.
More information
-
J. Stathis, S. Mahapatra, T. Grasser:
"Controversial Issues in Negative Bias Temperature Instability";
Microelectronics Reliability,
81
(2018),
244
- 251.
More information
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H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr:
"Process Simulation for the 1990s";
Microelectronics Journal (invited),
26
(1995),
2-3;
203
- 215.
More information
-
H. Stippel, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree";
IEICE Transactions on Electronics,
E77-C
(1994),
2;
118
- 123.
-
M. Stockinger, A. Wild, S. Selberherr:
"Drive Performance of an Asymmetric MOSFET Structure: The Peak Device";
Microelectronics Journal,
30
(1999),
3;
229
- 233.
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R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
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Solid-State Electronics,
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