TU Home
This publication list has been generated automatically from the publication data of the Faculty of Electrical Engineering and Information Technology. Please invoke the page "Publications of the Faculty" directly for more complex searches and queries, or use the global search function of the Publication Database of the Vienna University of Technology!


Publication Database Home  

Publication list for members of
E360 - Institute for Microelectronics
as authors or essentially involved persons

3490 records (1976 - 2022)

The complete list of publications of the Faculty of Electrical Engineering and Information Technology is available from the publication database beginning with the publication year 1996. The database may but need not necessarily contain publications dated earlier than 1996.


Books and Book Editorships


  1. Author: N. Arora
    Other person involved: Siegfried Selberherr, E360

    N. Arora:
    "MOSFET Models for VLSI Circuit Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9249-8, 605 pages.

    More information

  2. Authors: W Benger; Rene Heinzl, E360; Wolfgang Kapferer; Wolfram Schoor; Mayank Tyagi; Shalini Venkataraman; Gunther H Weber

    W. Benger, R. Heinzl, W. Kapferer, W. Schoor, M. Tyagi, S. Venkataraman, G.-H. Weber (ed.):
    "Proceedings of the 4th High-End Visualization Workshop";
    Lehmann, Berlin, 2007, ISBN: 978-3-86541-216-4; 175 pages.

  3. Authors: H.C. DeGraaff; F.M. Klassen
    Other person involved: Siegfried Selberherr, E360

    H.C. DeGraaff, F.M. Klassen:
    "Compact Transistor Modeling for Circuit Design";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1990, ISBN: 978-3-7091-9045-6, 351 pages.

    More information

  4. Authors: Franz Fasching, E360; Stefan Halama, E360; Siegfried Selberherr, E360

    F. Fasching, S. Halama, S. Selberherr (ed.):
    "Technology CAD Systems";
    Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9317-4; 309 pages.

    More information

  5. Authors: D.K. Ferry; S.M. Goodnick; Wolfgang Porod; Dragica Vasileska; Josef Weinbub, E360

    D.K. Ferry, S.M. Goodnick, W. Porod, D. Vasileska, J. Weinbub (ed.):
    "Book of Abstracts of the 20th International Workshop on Computational Nanotechnology (IWCN)";
    Institute for Microelectronics, TU Wien, Wien, 2019, ISBN: 978-3-9504738-0-3; 162 pages.

  6. Authors: D.K. Ferry; Mihail Nedjalkov, E360

    D.K. Ferry, M. Nedjalkov (ed.):
    "The Wigner Function in Science and Technology";
    IoP Publishing, Bristol, UK, 2018, ISBN: 978-0-7503-1671-2; 300 pages.

    More information

  7. Authors: D.K. Ferry; Josef Weinbub, E360

    D.K. Ferry, J. Weinbub (ed.):
    "Booklet of the 1st International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2015, 16 pages.

  8. Authors: D.K. Ferry; Josef Weinbub, E360; S.M. Goodnick

    D.K. Ferry, J. Weinbub, S.M. Goodnick (ed.):
    "Book of Abstracts of the 3rd International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2019, ISBN: 978-3-9504738-1-0; 56 pages.

  9. Authors: Lado Filipovic, E360; Tibor Grasser, E360

    L. Filipovic, T. Grasser (ed.):
    "Miniaturized Transistors";
    MDPI, 2019, ISBN: 978-3-03921-010-7; 202 pages.

    More information

  10. Authors: Lado Filipovic, E360; Tibor Grasser, E360

    L. Filipovic, T. Grasser (ed.):
    "Miniaturized Transistors, Volume II";
    MDPI, Basel, 2022, ISBN: 978-3-0365-4169-3; 352 pages.

    More information

  11. Authors: Francisco Gamiz; Viktor Sverdlov, E360; Carlos Sampedro; Luca Donet

    F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet (ed.):
    "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
    Universidad de Granada, Granada, Spain, 2018, ISBN: 978-1-5386-4810-0; 154 pages.

  12. Author: Tibor Grasser, E360

    T. Grasser (ed.):
    "Advanced Device Modeling and Simulation";
    World Scientific Publishing Co., 2003, ISBN: 9-812-38607-6; 210 pages.

  13. Author: Tibor Grasser, E360

    T. Grasser (ed.):
    "Bias Temperature Instability for Devices and Circuits";
    Springer Science+Business Media New York, 2013, ISBN: 978-1-4614-7908-6; 810 pages.

    More information

  14. Author: Tibor Grasser, E360

    T. Grasser (ed.):
    "Hot Carrier Degradation in Semiconductor Devices";
    Springer International Publishing, 2014, ISBN: 978-3-319-08993-5; 517 pages.

    More information

  15. Author: Tibor Grasser, E360

    T. Grasser (ed.):
    "Noise in Nanoscale Semiconductor Devices";
    Springer Science+Business Media New York, 2020, ISBN: 978-3-030-37499-0; 729 pages.

    More information

  16. Authors: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr (ed.):
    "Simulation of Semiconductor Processes and Devices 2007";
    Springer-Verlag, Wien - New York, Wien, 2007, ISBN: 978-3-211-72860-4; 460 pages.

    More information

  17. Author: W. Hänsch
    Other person involved: Siegfried Selberherr, E360

    W. Hänsch:
    "The Drift Diffusion Equation and Its Applications in MOSFET Modeling";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1991, ISBN: 978-3-7091-9097-5, 271 pages.

    More information

  18. Authors: Sung-Min Hong; A.-T Pham; C. Jungemann
    Other person involved: Siegfried Selberherr, E360

    S.-M Hong, A.-T Pham, C. Jungemann:
    "Deterministic Solvers for the Boltzmann Transport Equation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0777-5, 227 pages.

    More information

  19. Author: Yury Illarionov, E360

    Yu. Illarionov:
    "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
    Typography of St-Petersburg State Polytechnical University, St. Petersburg, 2014, 20 pages.

  20. Authors: Koji Ishibashi; S.M. Goodnick; Siegfried Selberherr, E360; Akira Fujiwara

    K. Ishibashi, S.M. Goodnick, S. Selberherr, A. Fujiwara (ed.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2012, ISBN: 978-3-901578-25-0; 100 pages.

  21. Authors: C. Jacoboni; P. Lugli
    Other person involved: Siegfried Selberherr, E360

    C. Jacoboni, P. Lugli:
    "The Monte Carlo Method for Semiconductor Device Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1989, ISBN: 978-3-7091-7453-1, 356 pages.

    More information

  22. Authors: David B. Janes; H. Riechert; Tomoki Machida; J. F. Conley; Josef Weinbub, E360; S.M. Goodnick

    D. Janes, H. Riechert, T. Machida, J. Conley, J. Weinbub, S.M. Goodnick (ed.):
    "Innovative Nanoscale Devices and Systems";
    Institute for Microelectronics, TU Wien, Wien, 2019, ISBN: 978-0-578-61722-0; 157 pages.

  23. Authors: B. Jonker; Wolfgang Porod; Viktor Sverdlov, E360; Kazuhiko Matsumoto; Siegfried Selberherr, E360; S.M. Goodnick

    B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick (ed.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2016, ISBN: 978-3-901578-30-4; 88 pages.

  24. Authors: W. Joppich; S. Mijalkovic
    Other person involved: Siegfried Selberherr, E360

    W. Joppich, S. Mijalkovic:
    "Multigrid Methods for Process Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9255-9, 309 pages.

    More information

  25. Authors: C. Jungemann; Bernd Meinerzhagen
    Other person involved: Siegfried Selberherr, E360

    C. Jungemann, B. Meinerzhagen:
    "Hierarchical Device Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2003, ISBN: 978-3-7091-7226-1, 254 pages.

    More information

  26. Authors: Kyoung-Youm Kim; Josef Weinbub, E360; Mark Everitt

    K. Kim, J. Weinbub, M. Everitt (ed.):
    "Book of Abstracts of the 4th International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2021, ISBN: 978-3-9504738-2-7; 75 pages.

  27. Authors: Robert Klima, E360; Siegfried Selberherr, E360

    R. Klima, S. Selberherr:
    "Programmieren in C";
    Springer-Verlag, Wien - New York, Wien, 2003, ISBN: 978-3-211-40514-7; 354 pages.

    More information

  28. Authors: Robert Klima, E360; Siegfried Selberherr, E360

    R. Klima, S. Selberherr:
    "Programmieren in C, 2. Auflage";
    Springer-Verlag, Wien - New York, Wien, 2007, ISBN: 978-3-211-72000-4; 366 pages.

  29. Authors: Robert Klima, E360; Siegfried Selberherr, E360

    R. Klima, S. Selberherr:
    "Programmieren in C, 3. Auflage";
    Springer-Verlag, Wien - New York, Wien, 2010, ISBN: 978-3-7091-0392-0; 366 pages.

    More information

  30. Authors: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr (ed.):
    "11th International Workshop on Computational Electronics Book of Abstracts";
    Technische Universität Wien, Institut für Mikroelektronik, Wien, 2006, ISBN: 3-901578-16-1; 400 pages.

  31. Author: Erasmus Langer, E360

    E. Langer:
    "Programmieren in Fortran";
    Springer, 1993, ISBN: 978-3-211-82446-7.

    More information

  32. Author: Peter A. Markowich
    Other person involved: Siegfried Selberherr, E360

    P. Markowich:
    "The Stationary Semiconductor Device Equations";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1986, ISBN: 978-3-211-99937-0, 193 pages.

    More information

  33. Authors: J. A. Martino; B.-Y. Nguyen; Francisco Gamiz; H. Ishii; J.-P. Raskin; Siegfried Selberherr, E360; E. Simoen

    J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed.):
    "Advanced CMOS-Compatible Semiconductor Devices 19";
    ECS Transactions, The Electrochemical Society, Vol.97, No.5, 2020, ISBN: 978-1-62332-604-3; 192 pages.

  34. Authors: J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen; A. Yoshino

    J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed.):
    "Advanced CMOS-Compatible Semiconductor Devices 18";
    ECS Transactions, The Electrochemical Society, Vol.85, No.5, 2018, ISBN: 978-1-62332-488-9; 230 pages.

  35. Authors: Kazuhiko Matsumoto; B. Jonker; Josef Weinbub, E360; Tomoki Machida; Siegfried Selberherr, E360; S.M. Goodnick

    K. Matsumoto, B. Jonker, J. Weinbub, T. Machida, S. Selberherr, S.M. Goodnick (ed.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2017, ISBN: 978-3-901578-31-1; 243 pages.

  36. Authors: Gregor Meller, E360; Tibor Grasser, E360

    G. Meller, T. Grasser (ed.):
    "Organic Electronics";
    Springer-Verlag, Berlin-Heidelberg, 2009, ISBN: 978-3-642-04537-0; 328 pages.

    More information

  37. Authors: N. Mori; Siegfried Selberherr, E360

    N. Mori, S. Selberherr (ed.):
    "16th International Workshop on Computational Electronics Book of Abstracts";
    Society for Micro- and Nanoelectronics, 2013, ISBN: 978-3-901578-26-7; 269 pages.

  38. Authors: A. Nathan; H. Baltes
    Other person involved: Siegfried Selberherr, E360

    A. Nathan, H. Baltes:
    "Microtransducer CAD";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1999, ISBN: 978-3-7091-7321-3, 427 pages.

    More information

  39. Authors: Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    M. Nedjalkov, I. Dimov, S. Selberherr (ed.):
    "Stochastic Approaches to Electron Transport in Micro- and Nanostructures";
    Birkhäuser Basel, 2021, ISBN: 978-3-030-67916-3; 230 pages.

    More information

  40. Authors: Y. Omura; Francisco Gamiz; H. Ishii; J. A. Martino; B.-Y. Nguyen; J.-P. Raskin; Siegfried Selberherr, E360

    Y. Omura, F. Gamiz, H. Ishii, J. A. Martino, B.-Y. Nguyen, J.-P. Raskin, S. Selberherr (ed.):
    "Advanced Semiconductor-on-Insulator Technology and Related Physics 15";
    ECS Transactions, The Electrochemical Society, Vol.35, No.5, 2011, ISBN: 978-1-56677-866-4; 333 pages.

  41. Authors: Y. Omura; Francisco Gamiz; B.-Y. Nguyen; H. Ishii; J. A. Martino; Siegfried Selberherr, E360; J.-P. Raskin

    Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed.):
    "Advanced Semiconductor-on-Insulator Technology and Related Physics 16";
    ECS Transactions, The Electrochemical Society, Vol.53, No.5, 2013, ISBN: 978-1-62332-027-0; 220 pages.

  42. Authors: Y. Omura; J. A. Martino; J.-P. Raskin; Siegfried Selberherr, E360; H. Ishii; Francisco Gamiz; B.-Y. Nguyen

    Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed.):
    "Advanced CMOS-Compatible Semiconductor Devices 17";
    ECS Transactions, The Electrochemical Society, Vol.66, No.5, 2015, ISBN: 978-1-62332-238-0; 365 pages.

  43. Authors: Vassil Palankovski, E360; Rüdiger Quay, E360
    Other person involved: Siegfried Selberherr, E360

    V. Palankovski, R. Quay:
    "Analysis and Simulation of Heterostructure Devices";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7193-6, 309 pages.

    More information

  44. Author: Peter Pichler
    Other person involved: Siegfried Selberherr, E360

    P. Pichler:
    "Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7204-9, 554 pages.

    More information

  45. Authors: Lukas Polok; Masha Sosonkina; William I. Thacker; Josef Weinbub, E360

    L. Polok, M. Sosonkina, W.I. Thacker, J. Weinbub (ed.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, San Diego, CA, USA, 2017, ISBN: 978-1-5108-3822-2; 192 pages.

  46. Author: Mahdi Pourfath, E360
    Other person involved: Siegfried Selberherr, E360

    M. Pourfath:
    "The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2014, ISBN: 978-3-7091-1800-9, 256 pages.

    More information

  47. Author: Rüdiger Quay, E360
    Other persons involved: R. Hull; R.M. Osgood; J. Parisi; H. Warlimont

    R. Quay:
    "Gallium Nitride Electronics";
    in series "Materials Science", series editor: R. Hull, R.M. Osgood, J. Parisi, H. Warlimont; Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-3-540-71890-1, 469 pages.

    More information

  48. Author: Andreas Schenk
    Other person involved: Siegfried Selberherr, E360

    A. Schenk:
    "Advanced Physical Models for Silicon Device Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1998, ISBN: 978-3-7091-7334-3, 349 pages.

    More information

  49. Author: D. Schroeder
    Other person involved: Siegfried Selberherr, E360

    D. Schroeder:
    "Modelling of Interface Carrier Transport for Device Simulation";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1994, ISBN: 978-3-7091-7368-8, 221 pages.

    More information

  50. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Analysis and Simulation of Semiconductor Devices";
    Springer-Verlag, Wien - New York, 1984, ISBN: 978-3-7091-8754-8; 294 pages.

    More information

  51. Author: Siegfried Selberherr, E360

    S. Selberherr (ed.):
    "Two Dimensional Modeling of MOS Transistors";
    Semiconductor Physics, Inc., Auszug aus der Dissertation in englischer Sprache, 1981, 146 pages.

  52. Authors: Siegfried Selberherr, E360; Hannes Stippel, E360; Rudolf Strasser, E360

    S. Selberherr, H. Stippel, R. Strasser (ed.):
    "Simulation of Semiconductor Devices and Processes, Vol.5";
    Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-7372-5; 504 pages.

    More information

  53. Author: Viktor Sverdlov, E360
    Other person involved: Siegfried Selberherr, E360

    V. Sverdlov:
    "Strain-Induced Effects in Advanced MOSFETs";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0381-4, 252 pages.

    More information

  54. Authors: Viktor Sverdlov, E360; Sorin Cristoloveanu, IMEP; Francisco Gamiz; Siegfried Selberherr, E360

    V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr (ed.):
    "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
    IEEE, 2016, ISBN: 978-1-4673-8608-1; 272 pages.

  55. Authors: Viktor Sverdlov, E360; Francisco Gamiz; Sorin Cristoloveanu, IMEP; Siegfried Selberherr, E360

    V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr (ed.):
    "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
    Society for Micro- and Nanoelectronics, 2016, ISBN: 978-3-901578-29-8; 166 pages.

  56. Authors: Viktor Sverdlov, E360; B. Jonker; Koji Ishibashi; S.M. Goodnick; Siegfried Selberherr, E360

    V. Sverdlov, B. Jonker, K. Ishibashi, S.M. Goodnick, S. Selberherr (ed.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2014, ISBN: 978-3-901578-28-1; 84 pages.

  57. Authors: Viktor Sverdlov, E360; Siegfried Selberherr, E360

    V. Sverdlov, S. Selberherr (ed.):
    "Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
    Solid-State Electronics, Elsevier, 2017, ISSN: 0038-1101; 206 pages.

  58. Authors: J. W. Swart; Siegfried Selberherr, E360; A. A. Susin; J. A. Diniz; N. Morimoto

    J. W. Swart, S. Selberherr, A. A. Susin, J. A. Diniz, N. Morimoto (ed.):
    "Microelectronics Technology and Devices - SBMICRO 2008";
    ECS Transactions, The Electrochemical Society, Vol.14, No.1, 2008, ISBN: 978-1-56677-646-2; 661 pages.

  59. Authors: Bianka Ullmann, E360; Gerald Artner, E389-02; Irene Hahn, Romer Labs; Philipp Hans, E163-03-2; Heinz Krebs, E163-03-2; Peter Eder-Neuhauser, E389-01; Richard Zemann, E311-01-2

    B. Ullmann, G. Artner, I. Hahn, P. Hans, H. Krebs, P. Eder-Neuhauser, R. Zemann (ed.):
    "Proceedings VSS 2016 - Vienna young Scientists Symposium";
    Book of Abstracts, Dipl.Ing. Heinz A. Krebs, 2352 Gumpoldskirchen, 2016, ISBN: 978-3-9504017-2-1; 128 pages.

    More information

  60. Author: Michael Waltl, E360

    M. Waltl (ed.):
    "Robust Microelectronic Devices";
    MDPI, 2022, ISBN: 978-3-0365-3337-7; 130 pages.

    More information

  61. Author: Christoph Wasshuber, E360
    Other person involved: Siegfried Selberherr, E360

    C. Wasshuber:
    "Computational Single-Electronics";
    in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2001, ISBN: 978-3-7091-7256-8, 278 pages.

    More information

  62. Authors: Layne T. Watson; Masha Sosonkina; William I. Thacker; Josef Weinbub, E360; Karl Rupp, E360

    L.T. Watson, M. Sosonkina, W.I. Thacker, J. Weinbub, K. Rupp (ed.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, San Diego, CA, USA, 2018, ISBN: 978-1-5108-6016-2; 154 pages.

  63. Authors: Layne T. Watson; Josef Weinbub, E360; Masha Sosonkina; William I. Thacker; Karl Rupp, E360

    L.T. Watson, J. Weinbub, M. Sosonkina, W.I. Thacker, K. Rupp (ed.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, Vista, CA, USA, 2015, ISBN: 978-1-5108-0101-1; 242 pages.

  64. Authors: Josef Weinbub, E360; Marc Baboulin; William I. Thacker; Lukas Polok; Sanjukta Bhowmick

    J. Weinbub, M. Baboulin, W.I. Thacker, L. Polok, S. Bhowmick (ed.):
    "High Performance Computing";
    The Society for Modeling and Simulation International, Vista, CA, USA, 2016, ISBN: 978-1-5108-2318-1; 210 pages.

  65. Authors: Josef Weinbub, E360; D.K. Ferry; Irena Knezevic; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    J. Weinbub, D.K. Ferry, I. Knezevic, M. Nedjalkov, S. Selberherr (ed.):
    "Book of Abstracts of the 2nd International Wigner Workshop";
    Institute for Microelectronics, TU Wien, Wien, 2017, ISBN: 978-3-200-05129-4; 51 pages.

  66. Authors: Josef Weinbub, E360; B. Jonker; H. Riechert; Tomoki Machida; S.M. Goodnick; Siegfried Selberherr, E360

    J. Weinbub, B. Jonker, H. Riechert, T. Machida, S.M. Goodnick, S. Selberherr (ed.):
    "Innovative Nanoscale Devices and Systems";
    Society for Micro- and Nanoelectronics, 2018, ISBN: 978-3-901578-32-8; 167 pages.

  67. Authors: Josef Weinbub, E360; Paul Manstetten, E360; S.M. Goodnick

    J. Weinbub, P. Manstetten, S.M. Goodnick (ed.):
    "Book of Abstracts of the Workshop on High Performance TCAD";
    Institute for Microelectronics, TU Wien, Wien, 2019, 28 pages.

  68. Authors: Richard Zemann, E311-01-2; Alexander Grill, E360; Irene Hahn; Heinz Krebs, E163-03-2; Andrea Mayr; Peter Eder-Neuhauser, E389-01; Bianka Ullmann, E360

    R. Zemann, A. Grill, I. Hahn, H. Krebs, A. Mayr, P. Eder-Neuhauser, B. Ullmann (ed.):
    "Proceedings VSS 2015 - Vienna young Scientists Symposium";
    Book of Abstracts, Dipl.Ing. Heinz A. Krebs, 2352 Gumpoldskirchen, 2015, ISBN: 978-3-9504017-07; 182 pages.


Publications in Scientific Journals


  1. Authors: A. Abramo; L. Baudry; R. Brunetti; R. Castagne; M. Charef; F. Dessene; P. Dollfus; W.L. Engl; R. Fauquembergue; C. Fiegna; M.V. Fischetti; S. Galdin; N. Goldsman; Michael Hackel, E360; C. Hamaguchi; K. Hess; K. Hennacy; P. Hesto; J.M. Higman; T. Izuka; C. Jungemann; Y. Kamakura; Hans Kosina, E360; T. Kunikiyo; S.E. Laux; H. Lin; C. Maziar; H. Mizuno; H.J. Peifer; S. Ramaswamy; N. Sano; P.G. Scrobohaci; Siegfried Selberherr, E360; M. Takenaka; T.-W. Tang; K. Taniguchi; J.L. Thobel; R. Thoma; K. Tomizawa; M. Tomizawa; T. Vogelsang; S.-L. Wang; X. Wang; C.-S. Yao; P.D. Yoder; A. Yoshii

    A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii:
    "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon";
    IEEE Transactions on Electron Devices, 41 (1994), 9; 1646 - 1654.

    More information

  2. Authors: Luiz Felipe Aguinsky, E360; Francio Rodrigues, E360; Georg Wachter; Michael Trupke; Ulrich Schmid, E366-02; Andreas Hössinger; Josef Weinbub, E360

    L.F. Aguinsky, F. Rodrigues, G. Wachter, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
    "Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon";
    Solid-State Electronics (invited), 191 (2022), 108262-1 - 108262-8.

    More information

  3. Authors: Luiz Felipe Aguinsky, E360; Georg Wachter; Paul Manstetten, E360; Francio Rodrigues, E360; Michael Trupke; Ulrich Schmid, E366-02; Andreas Hössinger; Josef Weinbub, E360

    L.F. Aguinsky, G. Wachter, P. Manstetten, F. Rodrigues, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
    "Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators";
    Journal of Micromechanics and Microengineering, 31 (2021), 12; 125003-1 - 125003-9.

    More information

  4. Authors: S. Ahmed; K. D. Holland; N. Paydavosi; C. Rogers; A Alam; Neophytos Neophytou, E360; D. Kienle; M. Vaidyanathan

    S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan:
    "Impact of Effective Mass on the Scaling Behavior of the fT and fmax of III-V High-Electron-Mobility Transistors";
    IEEE Transactions on Nanotechnology, 11 (2012), 6; 1160 - 1173.

  5. Authors: T. Aichinger; M. Nelhiebel; S. Einspieler; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
    "In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip";
    IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; 3 - 8.

  6. Authors: T. Aichinger; M. Nelhiebel; S. Einspieler; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
    "Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress";
    Journal of Applied Physics, 107 (2010), 024508-1 - 024508-8.

  7. Authors: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI";
    IEEE Transactions on Electron Devices, 56 (2009), 12; 3018 - 3026.

  8. Authors: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen";
    Applied Physics Letters, 96 (2010), 133511-1 - 133511-3.

  9. Authors: T. Aichinger; M. Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "On the Temperature Dependence of NBTI Recovery";
    Microelectronics Reliability, 48 (2008), 1178 - 1184.

    More information

  10. Authors: T. Aichinger; Michael Nelhiebel; Tibor Grasser, E360

    T. Aichinger, M. Nelhiebel, T. Grasser:
    "Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures";
    Microelectronics Reliability, 53 (2013), 7; 937 - 946.

    More information

  11. Authors: S. M. Amoroso; L. Gerrer; Mihail Nedjalkov, E360; Razaidi Hussin; Craig Alexander; A Asenov

    S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov:
    "Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues";
    IEEE Transactions on Electron Devices, 61 (2014), 5; 1292 - 1298.

    More information

  12. Authors: Mohsen Asad; M. Fathipour; Mohammad Hossein Sheikhi; Mahdi Pourfath, E360

    M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath:
    "High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles";
    Sensors and Actuators A: Physical, 220 (2014), 213 - 220.

    More information

  13. Authors: Mohsen Asad; Sedigheh Salimian; Mohammad Hossein Sheikhi; Mahdi Pourfath, E360

    M. Asad, S. Salimian, M. Sheikhi, M. Pourfath:
    "Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS2 Nanoparticles";
    Sensors and Actuators A: Physical, 232 (2015), 285 - 291.

    More information

  14. Authors: Mohsen Asad; Mohammad Hossein Sheikhi; Mahdi Pourfath, E360; Mahmood Moradi

    M. Asad, M. Sheikhi, M. Pourfath, M. Moradi:
    "High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs";
    Sensors and Actuators B: Chemical, 210 (2015), 1 - 8.

    More information

  15. Authors: Winfried Auzinger, E101-02; Harald Hofstätter; Othmar Koch; Michael Quell, E360

    W. Auzinger, H. Hofstätter, O. Koch, M. Quell:
    "Adaptive Time Propagation for Time-Dependent Schrödinger Equations";
    International Journal of Applied and Computational Mathematics, 7 (2021), 1; 6-1 - 6-14.

    More information

  16. Authors: Alexander Axelevitch; Vassil Palankovski, E360; Siegfried Selberherr, E360; G. Golan

    A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
    "Investigation of Novel Silicon PV Cells of a Lateral Type";
    Silicon, 7 (2015), 3; 283 - 291.

    More information

  17. Authors: Tesfaye Ayalew, E360; Andreas Gehring, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
    "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
    Microelectronics Reliability, 44 (2004), 9-11; 1473 - 1478.

    More information

  18. Authors: Tesfaye Ayalew, E360; Andreas Gehring, E360; Jong Mun Park, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
    "Improving SiC Lateral DMOSFET Reliability under High Field Stress";
    Microelectronics Reliability, 43 (2003), 9-11; 1889 - 1894.

    More information

  19. Authors: Tesfaye Ayalew, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
    "Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
    Materials Science Forum, 483-485 (2005), 845 - 848.

    More information

  20. Authors: Tesfaye Ayalew, E360; Sang-Cheol Kim; Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
    "Numerical Analysis of SiC Merged PiN Schottky Diodes";
    Materials Science Forum, 483-485 (2005), 949 - 952.

    More information

  21. Authors: Nima Sefidmooye Azar; Mahdi Pourfath, E360

    N.S. Azar, M. Pourfath:
    "Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents";
    The Journal of Physical Chemistry C, 120 (2016), 30; 16804 - 16814.

    More information

  22. Authors: Eberhard Baer; P. Evanschitzky; J. Lorenz; Frederic Roger; R. Minixhofer; Lado Filipovic, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
    "Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
    Microelectronic Engineering, 137 (2015), 141 - 145.

    More information

  23. Authors: Alireza R. Baghai-Wadji, E366-01; Siegfried Selberherr, E360; Franz Seifert, E366-01

    A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
    "Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain";
    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33 (1986), 3; 315 - 317.

    More information

  24. Authors: Mauro Ballicchia, E360; D.K. Ferry; Mihail Nedjalkov, E360; Josef Weinbub, E360

    M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub:
    "Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution";
    Applied Sciences (invited), 9 (2019), 7; 1344-1 - 1344-10.

    More information

  25. Authors: Mauro Ballicchia, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360

    M. Ballicchia, J. Weinbub, M. Nedjalkov:
    "Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects";
    Nanoscale, 10 (2018), 48; 23037 - 23049.

    More information

  26. Authors: A. G. Banshchikov; Yury Illarionov, E360; M. I. Vexler; Stefan Wachter, E387-01; N. S. Sokolov

    A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov:
    "Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer";
    Semiconductors (Physics of Semiconductor Devices), 53 (2019), 6; 833 - 837.

    More information

  27. Authors: Oskar Baumgartner, E360; Markus Karner, E360; Viktor Sverdlov, E360; Hans Kosina, E360

    O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
    "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
    Solid-State Electronics, 54 (2010), 143 - 148.

    More information

  28. Authors: Oskar Baumgartner, E360; Zlatan Stanojevic; Klaus Schnass; Markus Karner, E360; Hans Kosina, E360

    O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina:
    "VSP - A Quantum-Electronic Simulation Framework";
    Journal of Computational Electronics, 12 (2013), 4; 701 - 721.

    More information

  29. Authors: Oskar Baumgartner, E360; Viktor Sverdlov, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
    "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
    IEEE Transactions on Nanotechnology, 10 (2011), 4; 737 - 743.

    More information

  30. Authors: Majid Benam, E360; Mauro Ballicchia, E360; Josef Weinbub, E360; Siegfried Selberherr, E360; Mihail Nedjalkov, E360

    M. Benam, M. Ballicchia, J. Weinbub, S. Selberherr, M. Nedjalkov:
    "A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling";
    Journal of Computational Electronics, 20 (2021), 2; 775 - 784.

    More information

  31. Authors: Mario Bendra, E360-01; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Interface Effects in Ultra-Scaled MRAM Cells";
    Solid-State Electronics, 194 (2022), 108373-1 - 108373-4.

    More information

  32. Authors: Judith Berens; Gregor Pobegen; Thomas Eichinger; Gerald Rescher; Tibor Grasser, E360

    J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
    "Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs";
    Materials Science Forum, 963 (2019), 175 - 179.

    More information

  33. Authors: Judith Berens; Gregor Pobegen; Tibor Grasser, E360

    J. Berens, G. Pobegen, T. Grasser:
    "Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs";
    Materials Science Forum, 1004 (2020), 652 - 658.

    More information

  34. Authors: Judith Berens; Gregor Pobegen; Gerald Rescher; T. Aichinger; Tibor Grasser, E360

    J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
    "NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
    IEEE Transactions on Electron Devices, 66 (2019), 11; 4692 - 4697.

    More information

  35. Authors: Ruch Bernhard; Gregor Pobegen; Maximilian Rösch; Rajeev Krishna Vytla; Tibor Grasser, E360

    R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
    "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
    IEEE Transactions on Device and Materials Reliability, 19 (2019), 1; 133 - 139.

    More information

  36. Authors: Markus Bina; S. E. Tyaginov, E360; J. Franco; Karl Rupp, E360; Yannick Wimmer, E360; Dimitry Osintsev, E360; Ben Kaczer; Tibor Grasser, E360

    M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
    "Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
    IEEE Transactions on Electron Devices, 61 (2014), 9; 3103 - 3110.

    More information

  37. Authors: Thomas Binder, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Binder, C. Heitzinger, S. Selberherr:
    "A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23 (2004), 6; 814 - 822.

    More information

  38. Authors: Thomas Binder, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    T. Binder, A. Hössinger, S. Selberherr:
    "Rigorous Integration of Semiconductor Process and Device Simulators";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 9; 1204 - 1214.

    More information

  39. Authors: Walter Bohmayr, E360; A. Burenkov; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
    "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; 1236 - 1243.

    More information

  40. Authors: Walter Bohmayr, E360; A. Burenkov; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
    "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation";
    IEEE Transactions on Semiconductor Manufacturing, 8 (1995), 4; 402 - 407.

    More information

  41. Authors: V. M. Borzdov; V. O. Galenchik; Hans Kosina, E360; F. F. Komarov; O. G. Zhevnyak

    V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
    "Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
    Physics of Low-dimensional Structures, 5-6 (2003), 99 - 108.

  42. Authors: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)";
    IEICE Transactions on Electronics, E77-C (1994), 2; 179 - 186.

  43. Authors: H Brand; Siegfried Selberherr, E360

    H. Brand, S. Selberherr:
    "Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor";
    IEEE Transactions on Electron Devices, 42 (1995), 12; 2137 - 2146.

    More information

  44. Authors: Helmut Brech; T. Grave; Siegfried Selberherr, E360

    H. Brech, T. Grave, S. Selberherr:
    "Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
    IEEE Transactions on Electron Devices, 47 (2000), 10; 1957 - 1964.

    More information

  45. Authors: Helmut Brech; T. Grave; Thomas Simlinger, E360; Siegfried Selberherr, E360

    H. Brech, T. Grave, T. Simlinger, S. Selberherr:
    "Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
    IEEE Transactions on Electron Devices, 44 (1997), 11; 1822 - 1828.

    More information

  46. Authors: Enrico Brinciotti; Giorgio Badino; Martin Knaipp, E360; G Gramse; Jürgen Smoliner, E362; Ferry Kienberger

    E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger:
    "Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy";
    IEEE Transactions on Nanotechnology, 16 (2017), 2; 245 - 252.

    More information

  47. Authors: Matthias Budil, E366; E. Guerrero; Thomas Brabec, E387-01; Siegfried Selberherr, E360; Hans Pötzl, E366

    M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl:
    "A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon";
    COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6 (1987), 1; 37 - 44.

    More information

  48. Authors: A. Burenkov; K. Tietzel; Andreas Hössinger, E360; J. Lorenz; Heiner Ryssel; Siegfried Selberherr, E360

    A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
    "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
    IEICE Transactions on Electronics, E83-C (2000), 8; 1259 - 1266.

  49. Authors: V. V. A. Camargo; Ben Kaczer; Tibor Grasser, E360; G. Wirth

    V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
    "Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics";
    Microelectronics Reliability, 54 (2014), 11; 2364 - 2370.

  50. Authors: V. V. A. Camargo; Ben Kaczer; G. Wirth; Tibor Grasser, E360; G. Groeseneken

    V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
    "Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
    IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP (2013), 99.

    More information

  51. Authors: Leonardo C. Castro; D.L. John; D.L. Pulfrey; Mahdi Pourfath, E360; Andreas Gehring, E360; Hans Kosina, E360

    L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina:
    "Method for Predicting fT for Carbon Nanotube FETs";
    IEEE Transactions on Nanotechnology, Vol. 4 (2005), 6; 699 - 704.

    More information

  52. Authors: Hajdin Ceric, E360; Roberto Orio, E360; Johann Cervenka, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
    "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
    IEEE Transactions on Device and Materials Reliability, 9 (2009), 1; 9 - 19.

    More information

  53. Authors: Hajdin Ceric, E360; Roberto Orio, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, S. Selberherr:
    "Interconnect Reliability Dependence on Fast Diffusivity Paths";
    Microelectronics Reliability (invited), 52 (2012), 8; 1532 - 1538.

    More information

  54. Authors: Hajdin Ceric, E360; Roberto Orio, E360; Wolfhard Zisser, E360; Siegfried Selberherr, E360

    H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
    "Microstructural Impact on Electromigration: A TCAD Study";
    Facta universitatis - series: Electronics and Energetics, 27 (2014), 1; 1 - 11.

    More information

  55. Authors: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
    IEICE Transactions on Electronics (invited), E86-C (2003), 3; 421 - 426.

  56. Authors: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Electromigration in Submicron Interconnect Features of Integrated Circuits";
    Materials Science and Engineering R-Reports, 71 (2011), 5-6; 53 - 86.

    More information

  57. Authors: Hajdin Ceric, E360; Siegfried Selberherr, E360

    H. Ceric, S. Selberherr:
    "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
    Microelectronics Reliability, 42 (2002), 9-11; 1457 - 1460.

    More information

  58. Authors: Hajdin Ceric, E360; Siegfried Selberherr, E360; Houman Zahedmanesh; Roberto Orio, E360; Kristof Croes

    H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
    "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects";
    ECS Journal of Solid State Science and Technology, 10 (2021), 3; 035003-1 - 035003-11.

    More information

  59. Authors: Hajdin Ceric, E360; Houman Zahedmanesh; Kristof Croes

    H. Ceric, H. Zahedmanesh, K. Croes:
    "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods";
    Microelectronics Reliability, 100-101 (2019), 113362.

    More information

  60. Authors: Johann Cervenka, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    J. Cervenka, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Sacrificial Etching";
    Proceedings of SPIE, 6589 (2007), 452 - 460.

    More information

  61. Authors: Johann Cervenka, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    J. Cervenka, H. Ceric, S. Selberherr:
    "Three-Dimensional Simulation of Sacrificial Etching";
    Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14 (2008), 4-5; 665 - 671.

    More information

  62. Authors: Johann Cervenka, E360; Robert Klima, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
    "Three-Dimensional Device Optimization by Green's Functions";
    European Physical Journal - Applied Physics, 21 (2003), 103 - 106.

    More information

  63. Authors: Johann Cervenka, E360; Robert Kosik, E360; Mihail Nedjalkov, E360

    J. Cervenka, R. Kosik, M. Nedjalkov:
    "A Deterministic Wigner Approach for Superposed States";
    Journal of Computational Electronics, 20 (2021), 6; 2104 - 2110.

    More information

  64. Authors: Johann Cervenka, E360; Hans Kosina, E360; Siegfried Selberherr, E360; J. Zhang; N. Hrauda; J Stangl; G. Bauer; G. Vastola; A. Marzegalli; Francesco Montalenti; L. Miglio

    J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio:
    "Strained MOSFETs on Ordered SiGe Dots";
    Solid-State Electronics, 65-66 (2011), 81 - 87.

    More information

  65. Authors: Johann Cervenka, E360; Wilfried Wessner, E360; Elaf Al-Ani, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
    "Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25 (2006), 10; 2118 - 2128.

    More information

  66. Authors: Z. Chaghazardi; S. B. Touski; Mahdi Pourfath, E360; R. Faez

    Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez:
    "Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness";
    Journal of Applied Physics, 120 (2016), 5; 053904-1 - 053904-5.

    More information

  67. Authors: Raffaele Alberto Coppeta, E360; David Holec, E308-01; Hajdin Ceric, E360; Tibor Grasser, E360

    R. Coppeta, D. Holec, H. Ceric, T. Grasser:
    "Evaluation of Dislocation Energy in Thin Films";
    Philosophical Magazine, 95 (2015), 2; 186 - 209.

    More information

  68. Authors: S. Das; Amritanand Sebastian; Eric Pop; Connor J. McClellan; Aaron D. Franklin; Tibor Grasser, E360; Theresia Knobloch, E360; Yury Illarionov, E360; Ashish V. Penumatcha; J Appenzeller; Zhihong Chen; Wenjuan Zhu; Lain-Jong Li; Uygar E. Avci; Navakanta Bhat; Thomas D. Anthopoulos; Rajendra Singh

    S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh:
    "Transistors Based on Two-Dimensional Materials for Future Integrated Circuits";
    Nature Electronics, 4 (2021), 11; 786 - 799.

    More information

  69. Authors: Antonina Dedyk; Yulia Pavlova; Sergey Karmanenko; Alexander Semenov; Dmitry Semikin; Oleg Pakhomov; Alexander Starkov; Ivan Starkov, E360

    A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov:
    "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics";
    Journal of Vacuum Science & Technology B, 29 (2011), 01A501-1 - 01A501-5.

    More information

  70. Authors: Johannes Demel; Siegfried Selberherr, E360

    J. Demel, S. Selberherr:
    "Application of the Complete Tableau Approach in JANAP";
    Electrosoft, 2 (1991), 6; 243 - 260.

  71. Authors: Johannes Demel; Siegfried Selberherr, E360

    J. Demel, S. Selberherr:
    "VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran";
    Angewandte Informatik, 6 (1984), 244 - 247.

  72. Authors: Denis Demidov; Karsten Ahnert; Karl Rupp, E360; P. Gottschling

    D. Demidov, K. Ahnert, K. Rupp, P. Gottschling:
    "Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries";
    SIAM Journal on Scientific Computing, 35 (2013), 5; 453 - 472.

    More information

  73. Authors: Siddhartha Dhar, E360; Hans Kosina, E360; Gerhard Karlowatz, E360; Stephan Enzo Ungersböck, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
    "High-Field Electron Mobility Model for Strained-Silicon Devices";
    IEEE Transactions on Electron Devices, 53 (2006), 12; 3054 - 3062.

    More information

  74. Authors: Siddhartha Dhar, E360; Hans Kosina, E360; Vassil Palankovski, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
    "Electron Mobility Model for Strained-Si Devices";
    IEEE Transactions on Electron Devices, 52 (2005), 4; 527 - 533.

    More information

  75. Authors: Siddhartha Dhar, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
    "Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
    IEEE Transactions on Nanotechnology, 6 (2007), 1; 97 - 100.

    More information

  76. Authors: Georgios Diamantopoulos, E360; Andreas Hössinger; Siegfried Selberherr, E360; Josef Weinbub, E360

    G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
    "A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing";
    Advances in Computational Mathematics, 45 (2019), 4; 2029 - 2045.

    More information

  77. Author: Peter Dickinger, E360

    P. Dickinger:
    "New Models of High Voltage DMOS Devices for Circuit Simulation";
    Electrosoft, 1 (1990), 4; 298 - 308.

  78. Authors: Ivan Dimov; Mihail Nedjalkov, E360; J. M. Sellier; Siegfried Selberherr, E360

    I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
    "Boundary Conditions and the Wigner Equation Solution";
    Journal of Computational Electronics, 14 (2015), 4; 859 - 863.

    More information

  79. Authors: Nima Djavid; Kaveh Khaliji; Seyed Mohammad Tabatabaei; Mahdi Pourfath, E360

    N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath:
    "A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons";
    IEEE Transactions on Electron Devices, 61 (2014), 1; 23 - 29.

    More information

  80. Authors: Klaus Dragosits, E360; Martin Knaipp, E360; Siegfried Selberherr, E360

    K. Dragosits, M. Knaipp, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Memory Cells";
    Journal of the Korean Physical Society, 35 (1999), 92; 104 - 106.

    More information

  81. Authors: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Simulation of Ferroelectric Thin Films";
    Radiation Effects and Defects in Solids, 156 (2001), 1-4; 157 - 161.

    More information

  82. Authors: Klaus Dragosits, E360; Siegfried Selberherr, E360

    K. Dragosits, S. Selberherr:
    "Two-Dimensional Simulation of Ferroelectric Memory Cells";
    IEEE Transactions on Electron Devices, 48 (2001), 2; 316 - 322.

    More information

  83. Authors: Fabian Ducry, ETH Zurich; Dominic Waldhör, E360; Theresia Knobloch, E360; Miklos Csontos, ETH Zürich; Jimenez Nadia Olalla, ETH Zürich; Juergen Leuthold, ETH Zürich; Tibor Grasser, E360; Mathieu Luisier

    F. Ducry, D. Waldhör, T. Knobloch, M. Csontos, J. Olalla, J. Leuthold, T. Grasser, M. Luisier:
    "An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride";
    npj 2D Materials and Applications, 6 (2022), 58.

    More information

  84. Authors: A.-M. El-Sayed; Matthew B. Watkins; Tibor Grasser, E360; V. V. Afanas´Ev; A. L. Shluger

    A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
    "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide";
    Microelectronic Engineering, 147 (2015), 141 - 144.

    More information

  85. Authors: A.-M. El-Sayed; Matthew B. Watkins; Tibor Grasser, E360; V. V. Afanas´Ev; A. L. Shluger

    A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
    "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
    Physical Review Letters, 114 (2015), 11; 115503-1 - 115503-5.

    More information

  86. Authors: A.-M. El-Sayed; Yannick Wimmer, E360; Wolfgang Gös, E360; Tibor Grasser, E360; V. V. Afanas´Ev; A. L. Shluger

    A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
    "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
    Physical Review B, 92 (2015), 1; 014107-1 - 014107-11.

    More information

  87. Authors: Al-Moatasem El-Sayed, E360; Matthew B. Watkins; Tibor Grasser, E360; A. L. Shluger

    A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger:
    "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO";
    Physical Review B, 98 (2018), 6; 064102.

    More information

  88. Authors: Mohammad Elahi; Kaveh Khaliji; Seyed Mohammad Tabatabaei; Mahdi Pourfath, E360; Reza Asgari

    M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari:
    "Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain";
    Physical Review B, 91 (2015), 11; 1154121 - 1154128.

    More information

  89. Authors: Paul Ellinghaus, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics";
    Physica Status Solidi - Rapid Research Letters, 11 (2017), 7; 1700102-1 - 1700102-5.

    More information

  90. Authors: Paul Ellinghaus, E360; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; Ivan Dimov

    P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov:
    "Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition";
    Journal of Computational Electronics, 14 (2015), 1; 151 - 162.

    More information

  91. Authors: Johannes Ender, E360; Simone Fiorentini, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
    "Emerging CMOS Compatible Magnetic Memories and Logic";
    IEEE Journal of the Electron Devices Society (invited), 9 (2021), 456 - 463.

    More information

  92. Authors: Johannes Ender, E360; Simone Fiorentini, E360; Roberto Orio, E360; Tomás Hadámek, E360; Mario Bendra, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
    "Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
    Proceedings of SPIE (invited), 12157 (2022), 1215708-1 - 1215708-14.

    More information

  93. Authors: Johannes Ender, E360; Roberto Lacerda de Orio; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement learning to reduce failures in SOT-MRAM switching";
    Microelectronics Reliability (invited), 135 (2022), 114570; 1 - 5.

    More information

  94. Authors: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
    Microelectronics Reliability, 126 (2021), 114231-1 - 114231-5.

    More information

  95. Authors: Johannes Ender, E360; Roberto Orio, E360; Simone Fiorentini, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
    "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
    Proceedings of SPIE (invited), 11805 (2021), 1180519-1 - 1180519-8.

    More information

  96. Authors: Robert Entner, E360; Tibor Grasser, E360; Oliver Triebl, E360; H. Enichlmair; R. Minixhofer

    R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
    "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
    Microelectronics Reliability, 47 (2007), 4-5; 697 - 699.

  97. Authors: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "A Fast Level Set Framework for Large Three-Dimensional Topography Simulations";
    Computer Physics Communications, 180 (2009), 8; 1242 - 1250.

    More information

  98. Authors: Otmar Ertl, E360; Siegfried Selberherr, E360

    O. Ertl, S. Selberherr:
    "Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation";
    Microelectronic Engineering, 87 (2010), 1; 20 - 29.

    More information

  99. Authors: T Fahringer; Peter Blaha; Andreas Hössinger, E360; Joachim Luitz; Eduard Mehofer; Hans Moritsch; B. Scholz

    T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz:
    "Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures ";
    Concurrency and Computation: Practice and Experience, 13 (2001), 10; 1 - 17.

  100. Authors: Franz Fasching, E360; Walter Tuppa, E360; Siegfried Selberherr, E360

    F. Fasching, W. Tuppa, S. Selberherr:
    "VISTA - The Data Level";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13 (1994), 1; 72 - 81.

    More information

  101. Authors: Safari Fatemeh; Mahdi Moradinasab; Udo Schwalke; Lado Filipovic, E360

    S. Fatemeh, M. Moradinasab, U. Schwalke, L. Filipovic:
    "Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications";
    ACS Omega, 6 (2021), 29; 18770 - 18781.

    More information

  102. Authors: Maximilian Feil; Andreas Huerner; Katja Puschkarsky; Christian Schleich, E360; Thomas Eichinger; W. Gustin; H. Reisinger; Tibor Grasser, E360

    M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
    "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
    Crystals (invited), 10 (2020), 12; 1143-1 - 1143-14.

    More information

  103. Authors: Maximilian Feil; Katja Puschkarsky; W. Gustin; H. Reisinger; Tibor Grasser, E360

    M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser:
    "On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices";
    IEEE Transactions on Electron Devices, 68 (2021), 1; 236 - 243.

    More information

  104. Authors: D.K. Ferry; Mihail Nedjalkov, E360; Josef Weinbub, E360; Mauro Ballicchia, E360; Ian Welland; Siegfried Selberherr, E360

    D.K. Ferry, M. Nedjalkov, J. Weinbub, M. Ballicchia, I. Welland, S. Selberherr:
    "Complex Systems in Phase Space";
    Entropy (invited), 22 (2020), 10; 1103-1 - 1103-19.

    More information

  105. Authors: D.K. Ferry; Josef Weinbub, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    D.K. Ferry, J. Weinbub, M. Nedjalkov, S. Selberherr:
    "A Review of Quantum Transport in Field-Effect Transistors";
    Semiconductor Science and Technology (invited), 37 (2022), 4; 043001-1 - 043001-32.

    More information

  106. Author: Lado Filipovic, E360

    L. Filipovic:
    "A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration";
    Microelectronics Reliability, 97 (2019), 38 - 52.

    More information

  107. Author: Lado Filipovic, E360

    L. Filipovic:
    "Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters";
    Microelectronics Reliability, 123 (2021), 114219-1 - 114219-14.

    More information

  108. Authors: Lado Filipovic, E360; Ayoub Lahlalia, E360

    L. Filipovic, A. Lahlalia:
    "Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology";
    Journal of the Electrochemical Society, 165 (2018), 16; 862 - 879.

    More information

  109. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework";
    Microelectronic Engineering, 107 (2013), 23 - 32.

    More information

  110. Authors: Lidija Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors";
    Nanomaterials (invited), 12 (2022), 1651.

    More information

  111. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Microstructure and Granularity Effects in Electromigration";
    IEEE Journal of the Electron Devices Society (invited), 9 (2021), 476 - 483.

    More information

  112. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors";
    Sensors, 15 (2015), 4; 7206 - 7227.

    More information

  113. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
    IEEE Transactions on Device and Materials Reliability, 16 (2016), 4; 483 - 495.

    More information

  114. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Stress in Three-Dimensionally Integrated Sensor Systems";
    Microelectronics Reliability, 61 (2016), 3 - 10.

    More information

  115. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
    Microelectronics Reliability, 54 (2014), 9-10; 1953 - 1958.

    More information

  116. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360

    L. Filipovic, S. Selberherr:
    "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors";
    Materials (invited), 12 (2019), 15; 2410-1 - 2410-37.

    More information

  117. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; Elise Brunet, E165-01; Stephan Seinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
    "Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques";
    Microelectronic Engineering, 117 (2014), 57 - 66.

    More information

  118. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; Elise Brunet; Stephan Seinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank; Christian Gspan; Werner Grogger

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
    "A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework";
    Engineering Letters (invited), 21 (2013), 4; 224 - 240.

  119. Authors: Lado Filipovic, E360; Siegfried Selberherr, E360; G. C. Mutinati; E. Brunet; S. Steinhauer; Anton Köck; Jordi Teva; J. Kraft; Joerg Siegert; F. Schrank; Christian Gspan; Werner Grogger

    L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
    "Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications";
    IEEE Transactions on Semiconductor Manufacturing, 27 (2014), 2; 269 - 277.

    More information

  120. Authors: Lado Filipovic, E360; Anderson P. Singulani, E360; Frederic Roger; Sara Carniello; Siegfried Selberherr, E360

    L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
    "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
    Microelectronics Reliability, 55 (2015), 9-10; 1843 - 1848.

    More information

  121. Authors: Simone Fiorentini, E360; Johannes Ender, E360; Mohamed Mohamedou, E360-01; Siegfried Selberherr, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
    Proceedings of SPIE (invited), 11470 (2020), 50 - 56.

    More information

  122. Authors: Simone Fiorentini, E360; Johannes Ender, E360; Siegfried Selberherr, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
    "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
    Solid-State Electronics (invited), 186 (2021), 108103.

    More information

  123. Authors: Simone Fiorentini, E360; Roberto Orio, E360; Siegfried Selberherr, E360; Johannes Ender, E360; Wolfgang Goes, Silvaco; Viktor Sverdlov, E360

    S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
    "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
    IEEE Journal of the Electron Devices Society (invited), 8 (2020), 1249 - 1256.

    More information

  124. Authors: Claus Fischer, E360; Gerd Nanz, E360; Siegfried Selberherr, E360

    C. Fischer, G. Nanz, S. Selberherr:
    "Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas";
    Computer Methods in Applied Mechanics and Engineering, 110 (1993), 1-2; 17 - 24.

    More information

  125. Authors: Peter Fleischmann, E360; Wolfgang Pyka, E360; Siegfried Selberherr, E360

    P. Fleischmann, W. Pyka, S. Selberherr:
    "Mesh Generation for Application in Technology CAD";
    IEICE Transactions on Electronics (invited), E82-C (1999), 6; 937 - 947.

  126. Authors: Peter Fleischmann, E360; Siegfried Selberherr, E360

    P. Fleischmann, S. Selberherr:
    "Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 8; 1 - 38.

    More information

  127. Authors: Samuel Foster; Michael Thesberg, E360; Neophytos Neophytou

    S. Foster, M. Thesberg, N. Neophytou:
    "Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites";
    Materials Today: Proceedings, 8 (2019), 690 - 695.

    More information

  128. Authors: Samuel Foster; Michael Thesberg, E360; Neophytos Neophytou

    S. Foster, M. Thesberg, N. Neophytou:
    "Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations";
    Physical Review B, 96 (2017), 19; 195425-1 - 195425-12.

    More information

  129. Authors: J. Franco; S. Graziano; Ben Kaczer; F. Crupi; L. A. Ragnarsson; Tibor Grasser, E360; G. Groeseneken

    J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken:
    "BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic";
    Microelectronics Reliability, 52 (2012), 1932 - 1935.

    More information

  130. Authors: J. Franco; Ben Kaczer; J. Mitard; M. Toledano-Luque; Ph. J. Roussel; L. Witters; Tibor Grasser, E360; Guido Groeseneken

    J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
    "NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
    IEEE Transactions on Device and Materials Reliability (invited), 13 (2013), 4; 497 - 506.

    More information

  131. Authors: J. Franco; Ben Kaczer; Ph. J. Roussel; J. Mitard; M. Cho; L. Witters; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken:
    "SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI";
    IEEE Transactions on Electron Devices, 60 (2013), 1; 396 - 404.

    More information

  132. Authors: J. Franco; Ben Kaczer; M. Toledano-Luque; Muhammad Faiz Bukhori; Ph. J. Roussel; Tibor Grasser, E360; A Asenov; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken:
    "Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs";
    IEEE Electron Device Letters, 33 (2012), 6; 779 - 781.

  133. Authors: J. Franco; Ben Kaczer; M Toledano-Luque; Ph. J. Roussel; M Choa; T. Kauerauf; J. Mitard; G. Eneman; L. Witters; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken:
    "Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs";
    Microelectronic Engineering, 109 (2013), 250 - 256.

    More information

  134. Authors: J. Franco; Ben Kaczer; M. Toledano-Luque; Ph. J. Roussel; Philipp Paul Hehenberger, E360; Tibor Grasser, E360; J. Mitard; G. Eneman; T.Y. Hoffmann; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
    "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
    Microelectronic Engineering, 88 (2011), 7; 1388 - 1391.

    More information

  135. Authors: J. Franco; Ben Kaczer; M. Toledano-Luque; Ph. J. Roussel; T. Kauerauf; J. Mitard; L. Witters; Tibor Grasser, E360; G. Groeseneken

    J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken:
    "SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues";
    IEEE Transactions on Electron Devices, 60 (2013), 1; 405 - 412.

  136. Authors: J. Franco; Zhicheng Wu; Gerhard Rzepa, E360; L. A. Ragnarsson; Harold Dekkers; Anne Vandooren; Guido Groeseneken; N. Horiguchi; N. Collaert; D Linten; Tibor Grasser, E360; Ben Kaczer

    J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
    "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI";
    IEEE Transactions on Device and Materials Reliability, 19 (2019), 2; 268 - 274.

    More information

  137. Authors: Andrea F. Franz; Gerhard Franz, E366; Siegfried Selberherr, E360; Ch. Ringhofer; Peter A. Markowich

    A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich:
    "Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation";
    IEEE Transactions on Electron Devices, 30 (1983), 9; 1070 - 1082.

    More information

  138. Authors: Francisco Gamiz; Juan B. Roldan; Hans Kosina, E360; Tibor Grasser, E360

    F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
    "Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
    IEEE Transactions on Electron Devices, 48 (2001), 9; 1878 - 1884.

  139. Authors: Abel Garcia-Barrientos; V. Grimalsky; E. A. Gutierrez-Dominguez; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski:
    "Nonstationary Effects of the Space Charge in Semiconductor Structures";
    Journal of Applied Physics, 105 (2009), 074501-1 - 074501-6.

    More information

  140. Authors: Abel Garcia-Barrientos; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Palankovski:
    "Numerical Simulations of Amplification of Space Charge Waves in n-InP Films";
    Materials Science and Engineering B, 176 (2011), 17; 1368 - 1372.

    More information

  141. Authors: Abel Garcia-Barrientos; Vassil Palankovski, E360

    A. Garcia-Barrientos, V. Palankovski:
    "Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity";
    Applied Physics Letters, 98 (2011), 072110-1 - 072110-3.

    More information

  142. Authors: Andreas Gehring, E360; Tibor Grasser, E360; Byoung-Ho Cheong; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
    "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
    Solid-State Electronics, 46 (2002), 10; 1545 - 1551.

    More information

  143. Authors: Andreas Gehring, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
    "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
    Electronics Letters, 39 (2003), 8; 691 - 692.

    More information

  144. Authors: Andreas Gehring, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
    "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
    Journal of Applied Physics, 92 (2002), 10; 6019 - 6027.

    More information

  145. Authors: Andreas Gehring, E360; F. Jimenez-Molinos; Hans Kosina, E360; A. Palma; Francisco Gamiz; Siegfried Selberherr, E360

    A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
    "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
    Microelectronics Reliability, 43 (2003), 9-11; 1495 - 1500.

    More information

  146. Authors: Andreas Gehring, E360; Hans Kosina, E360

    A. Gehring, H. Kosina:
    "Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method";
    Journal of Computational Electronics, 4 (2005), 1-2; 67 - 70.

  147. Authors: Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    A. Gehring, H. Kosina, S. Selberherr:
    "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
    Journal of Computational Electronics, 2 (2003), 2-4; 219 - 223.

    More information

  148. Authors: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Evolution of Current Transport Models for Engineering Applications";
    Journal of Computational Electronics, 3 (2004), 3-4; 149 - 155.

    More information

  149. Authors: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Gate Current Modeling for MOSFETs";
    Journal of Computational and Theoretical Nanoscience (invited), 2 (2005), 1; 26 - 44.

    More information

  150. Authors: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
    IEEE Transactions on Device and Materials Reliability, 4 (2004), 3; 306 - 319.

    More information

  151. Authors: Andreas Gehring, E360; Siegfried Selberherr, E360

    A. Gehring, S. Selberherr:
    "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
    Microelectronics Reliability, 44 (2004), 9-11; 1879 - 1884.

    More information

  152. Authors: N Ghobadi; Mahdi Pourfath, E360

    N. Ghobadi, M. Pourfath:
    "A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures";
    IEEE Transactions on Electron Devices, 61 (2014), 1; 186 - 192.

    More information

  153. Authors: N Ghobadi; Mahdi Pourfath, E360

    N. Ghobadi, M. Pourfath:
    "On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors";
    Journal of Applied Physics, 116 (2014), 18; 1845061 - 1845067.

    More information

  154. Authors: N Ghobadi; Mahdi Pourfath, E360

    N. Ghobadi, M. Pourfath:
    "Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing";
    IEEE Electron Device Letters, 36 (2015), 3; 280 - 282.

    More information

  155. Authors: M. Gholipour; N. Masoumi; Y. C. Chen; D. Chen; Mahdi Pourfath, E360

    M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath:
    "Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design";
    IEEE Transactions on Electron Devices, 61 (2014), 12; 4000 - 4006.

    More information

  156. Authors: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360

    J. Ghosh, D. Osintsev, V. Sverdlov:
    "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
    Journal of Computational Electronics, 18 (2019), 1; 28 - 36.

    More information

  157. Authors: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
    Journal of Nano Research, 39 (2016), 34 - 42.

    More information

  158. Authors: Joydeep Ghosh, E360; Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
    "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
    Microelectronic Engineering, 147 (2015), 89 - 91.

    More information

  159. Authors: Joydeep Ghosh, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
    Journal of Applied Physics, 115 (2014), 17; 17C503-1 - 17C503-3.

    More information

  160. Authors: Joydeep Ghosh, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Spin Injection in a Semiconductor Through a Space-Charge Layer";
    Solid-State Electronics, 101 (2014), 116 - 121.

    More information

  161. Authors: Kay-Uwe Giering; Katja Puschkarsky; H. Reisinger; Gerhard Rzepa, E360; Gunnar Andreas Rott; R. P. Vollertsen; Tibor Grasser, E360; Roland Jancke

    K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke:
    "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling";
    IEEE Transactions on Electron Devices, 66 (2019), 4; 1662 - 1668.

    More information

  162. Authors: Markus Glaser; Andreas Kitzler; A Johannes; Slawomir Pruncal; Heidi Potts; Sonia Conesa-Boj; Lidija Filipovic, E360; Hans Kosina, E360; Wolfgang Skorupa; Emmerich Bertagnolli, E362; C Ronning; Anna Fontcuberta i Morral; Alois Lugstein, E362

    M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein:
    "Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures";
    Nano Letters, 16 (2016), 6; 3507 - 3518.

    More information

  163. Authors: Lukas Gnam, E360; Paul Manstetten, E360; Andreas Hössinger; Siegfried Selberherr, E360; Josef Weinbub, E360

    L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
    "Accelerating Flux Calculations Using Sparse Sampling";
    Micromachines (invited), 9 (2018), 11; 1 - 17.

    More information

  164. Authors: Hans Goebl; Siegfried Selberherr, E360; W.-D Rase; H. Pudlatz

    H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz:
    "Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique";
    Computers and the Humanities, 16 (1982), 69 - 84.

    More information

  165. Authors: Wolfgang Gös, E360; Markus Karner, E360; Viktor Sverdlov, E360; Tibor Grasser, E360

    W. Gös, M. Karner, V. Sverdlov, T. Grasser:
    "Charging and Discharging of Oxide Defects in Reliability Issues";
    IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; 491 - 500.

    More information

  166. Authors: Wolfgang Gös, E360; Franz Schanovsky, E360; H. Reisinger; Ben Kaczer; Tibor Grasser, E360

    W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
    "Bistable Defects as the Cause for NBTI and RTN";
    Solid State Phenomena (invited), 178-179 (2011), 473 - 482.

    More information

  167. Authors: Wolfgang Gös, E360; Yannick Wimmer, E360; Al-Moatasem El-Sayed, E360; Gerhard Rzepa, E360; Markus Jech, E360; A. L. Shluger; Tibor Grasser, E360

    W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser:
    "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence";
    Microelectronics Reliability, 87 (2018), 286 - 320.

    More information

  168. Authors: Benito Gonzalez; Vassil Palankovski, E360; Hans Kosina, E360; A. Hernandez; Siegfried Selberherr, E360

    B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
    "An Energy Relaxation Time Model for Device Simulation";
    Solid-State Electronics, 43 (1999), 9; 1791 - 1795.

    More information

  169. Author: Tibor Grasser, E360

    T. Grasser:
    "Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation";
    Physica A: Statistical Mechanics and its Applications, 349 (2005), 221 - 258.

    More information

  170. Author: Tibor Grasser, E360

    T. Grasser:
    "Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities";
    Microelectronics Reliability (invited), 52 (2012), 1; 39 - 70.

    More information

  171. Authors: Tibor Grasser, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, W. Gös, B. Kaczer:
    "Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models";
    IEEE Transactions on Device and Materials Reliability (invited), 8 (2008), 1; 79 - 97.

    More information

  172. Authors: Tibor Grasser, E360; Ben Kaczer

    T. Grasser, B. Kaczer:
    "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs";
    IEEE Transactions on Electron Devices, 56 (2009), 5; 1056 - 1062.

    More information

  173. Authors: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360; T. Aichinger; Philipp Paul Hehenberger, E360; M. Nelhiebel

    T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
    "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
    Microelectronic Engineering (invited), 86 (2009), 7-9; 1876 - 1882.

  174. Authors: Tibor Grasser, E360; Ben Kaczer; Wolfgang Gös, E360; H. Reisinger; T. Aichinger; Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; Franz Schanovsky, E360; J. Franco; M. Toledano-Luque; M. Nelhiebel

    T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel:
    "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps";
    IEEE Transactions on Electron Devices (invited), 58 (2011), 11; 3652 - 3666.

  175. Authors: Tibor Grasser, E360; Robert Kosik, E360; C. Jungemann; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
    "Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
    Journal of Applied Physics, 97 (2005), 9; 093710-1 - 093710-12.

    More information

  176. Authors: Tibor Grasser, E360; Robert Kosik, E360; C. Jungemann; Bernd Meinerzhagen; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
    "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
    Journal of Computational Electronics, 3 (2004), 3-4; 183 - 187.

    More information

  177. Authors: Tibor Grasser, E360; Hans Kosina, E360; Markus Gritsch, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
    "Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
    Journal of Applied Physics, 90 (2001), 5; 2389 - 2396.

    More information

  178. Authors: Tibor Grasser, E360; Hans Kosina, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
    "Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
    Applied Physics Letters, 80 (2002), 4; 613 - 615.

    More information

  179. Authors: Tibor Grasser, E360; Hans Kosina, E360; Clemens Heitzinger, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
    "Characterization of the Hot Electron Distribution Function Using Six Moments";
    Journal of Applied Physics, 91 (2002), 6; 3869 - 3879.

    More information

  180. Authors: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hot Carrier Effects within Macroscopic Transport Models";
    International Journal of High Speed Electronics and Systems, 13 (2003), 3; 873 - 901.

    More information

  181. Authors: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
    Wisnik (invited), 444 (2002), 28 - 41.

  182. Authors: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
    Wisnik (invited), 444 (2002), 18 - 27.

  183. Authors: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
    Journal of Applied Physics, 90 (2001), 12; 6165 - 6171.

    More information

  184. Authors: Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, H. Kosina, S. Selberherr:
    "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
    Applied Physics Letters, 79 (2001), 12; 1900 - 1902.

    More information

  185. Authors: Tibor Grasser, E360; H. Reisinger; Paul-Jürgen Wagner, E360; Ben Kaczer

    T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer:
    "Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors";
    Physical Review B, 82 (2010), 245318-1 - 245318-10.

    More information

  186. Authors: Tibor Grasser, E360; K. Rott; H. Reisinger; Michael Waltl, E360; Franz Schanovsky, E360; Ben Kaczer

    T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
    "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
    IEEE Transactions on Electron Devices, 61 (2014), 11; 3586 - 3593.

    More information

  187. Authors: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Electro-Thermal Effects in Mixed-Mode Device Simulation";
    Romanian Journal of Information Science and Technology, 5 (2002), 4; 339 - 354.

  188. Authors: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
    IEEE Transactions on Electron Devices, 48 (2001), 7; 1421 - 1427.

    More information

  189. Authors: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Mixed-Mode Device Simulation";
    Microelectronics Journal, 31 (2000), 11-12; 873 - 881.

    More information

  190. Authors: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Modeling of Negative Bias Temperature Instability";
    Journal of Telecommunications and Information Technology (invited), 7 (2007), 2; 92 - 102.

  191. Authors: Tibor Grasser, E360; Siegfried Selberherr, E360

    T. Grasser, S. Selberherr:
    "Technology CAD: Device Simulation and Characterization";
    Journal of Vacuum Science & Technology B, 20 (2002), 1; 407 - 413.

    More information

  192. Authors: Tibor Grasser, E360; T.-W. Tang; Hans Kosina, E360; Siegfried Selberherr, E360

    T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
    "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
    Proceedings of the IEEE, 91 (2003), 2; 251 - 274.

    More information

  193. Authors: Tibor Grasser, E360; Paul-Jürgen Wagner, E360; Philipp Paul Hehenberger, E360; Wolfgang Gös, E360; Ben Kaczer

    T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
    "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
    IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; 526 - 535.

    More information

  194. Authors: Alexander Grill, E360; Bernhard Stampfer, E360; Ki-Sik Im; J.-H. Lee; C Ostermaier; Hajdin Ceric, E360; Michael Waltl, E360; Tibor Grasser, E360

    A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser:
    "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs";
    Solid-State Electronics, 19 (2019), 156; 41 - 47.

    More information

  195. Authors: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
    Solid-State Electronics, 45 (2001), 5; 621 - 627.

    More information

  196. Authors: Markus Gritsch, E360; Hans Kosina, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
    "Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
    IEEE Transactions on Electron Devices, 49 (2002), 10; 1814 - 1820.

    More information

  197. Authors: Neha Gupta; Ambika Shah; Sajid Khan; Santosh Kumar Vishvakarma; Michael Waltl, E360; Patrick Girard

    N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard:
    "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications";
    Electronics, 10 (2021), 14; 1718-1 - 1718-16.

    More information

  198. Authors: T.V. Gurov; Mihail Nedjalkov, E360; P.A. Whitlock; Hans Kosina, E360; Siegfried Selberherr, E360

    T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
    "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
    Physica B: Condensed Matter, 314 (2002), 1-4; 301 - 304.

    More information

  199. Author: Predrag Habas, E360

    P. Habas:
    "A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility";
    Solid-State Electronics, 33 (1990), 7; 923 - 933.

    More information

  200. Author: Predrag Habas, E360

    P. Habas:
    "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs";
    Microelectronic Engineering, 28 (1995), 1-4; 171 - 174.

    More information

  201. Authors: Predrag Habas, E360; John Faricelli

    P. Habas, J. Faricelli:
    "Investigation of the Physical Modeling of the Gate-Depletion Effect";
    IEEE Transactions on Electron Devices, 39 (1992), 6; 1496 - 1500.

    More information

  202. Authors: Predrag Habas, E360; Siegfried Selberherr, E360

    P. Habas, S. Selberherr:
    "Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices";
    Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20 (1990), 4; 185 - 188.

  203. Authors: Predrag Habas, E360; Siegfried Selberherr, E360

    P. Habas, S. Selberherr:
    "On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling";
    Solid-State Electronics, 33 (1990), 12; 1539 - 1544.

    More information

  204. Authors: Michael Hackel, E360; M. Faber; H. Markum

    M. Hackel, M. Faber, H. Markum:
    "Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks";
    Physical Review D, 46 (1992), 12; 5648 - 5654.

  205. Authors: Michael Hackel, E360; M. Faber; H. Markum; M. Müller

    M. Hackel, M. Faber, H. Markum, M. Müller:
    "Chiral Interface for QCD with Dynamical Quarks";
    International Journal of Modern Physics C, 3 (1992), 5; 961 - 970.

    More information

  206. Authors: Tomás Hadámek, E360; Simone Fiorentini, E360; Mario Bendra, E360-01; Johannes Ender, E360; Roberto Orio, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
    "Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach";
    Solid-State Electronics (invited), 193 (2022), 108269-1 - 108269-7.

    More information

  207. Authors: W. Hänsch; Siegfried Selberherr, E360

    W. Hänsch, S. Selberherr:
    "MINIMOS 3: A MOSFET Simulator that Includes Energy Balance";
    IEEE Transactions on Electron Devices, 34 (1987), 5; 1074 - 1078.

    More information

  208. Authors: Stefan Halama, E360; Franz Fasching, E360; Claus Fischer, E360; Hans Kosina, E360; Ernst Leitner, E360; Philipp Lindorfer, E360; Christoph Pichler, E360; Hubert Pimingstorfer; Helmut Puchner, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360; Martin Stiftinger, E360; Hannes Stippel, E360; Ernst Strasser, E360; Walter Tuppa, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
    "The Viennese Integrated System for Technology CAD Applications";
    Microelectronics Journal, 26 (1995), 137 - 158.

    More information

  209. Authors: Stefan Halama, E360; Christoph Pichler, E360; Gerhard Rieger, E360; Gerhard Schrom, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr:
    "VISTA - User Interface, Task Level, and Tool Integration";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14 (1995), 10; 1208 - 1222.

    More information

  210. Authors: Stefan Halama, E360; Siegfried Selberherr, E360

    S. Halama, S. Selberherr:
    "Future Aspects of Process and Device Simulation";
    Electron Technology (invited), 26 (1993), 49 - 57.

  211. Authors: Christian Harlander, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    C. Harlander, R. Sabelka, S. Selberherr:
    "Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method";
    Microelectronics Journal, 34 (2003), 9; 815 - 821.

    More information

  212. Authors: Anzt Hartwig; Erik Boman; Rob Falgout; Pieter Ghysels; Michael Heroux; Xiaoye Li; Lois Curfman McInnes; Richard T. Mills; Sivasankaran Rajamanickam; Karl Rupp, E360; Barry Smith; Ichitaro Yamazaki; Ulrike Meier Yang

    A. Hartwig, E. Boman, R. Falgout, P. Ghysels, M. Heroux, X. Li, L. McInnes, R. Mills, S. Rajamanickam, K. Rupp, B. Smith, I. Yamazaki, U. Meier Yang:
    "Preparing Sparse Solvers for Exascale Computing";
    Philosophical Transactions of The Royal Society A (invited), 378 (2020), 20190053-1 - 20190053-14.

    More information

  213. Authors: Philipp Paul Hehenberger, E360; Paul-Jürgen Wagner, E360; H. Reisinger; Tibor Grasser, E360

    Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
    "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
    Microelectronics Reliability, 49 (2009), 1013 - 1017.

    More information

  214. Authors: Otto Heinreichsberger, E360; Siegfried Selberherr, E360; Martin Stiftinger, E360; K. Traar

    O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar:
    "Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation";
    SIAM Journal of Scientific and Statistical Computing, 13 (1992), 1; 289 - 306.

    More information

  215. Authors: Rene Heinzl, E360; Philipp Schwaha, E360

    R. Heinzl, P. Schwaha:
    "A Generic Topology Library";
    Science of Computer Programming, 76 (2011), 4; 324 - 346.

    More information

  216. Authors: Rene Heinzl, E360; Philipp Schwaha, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
    "GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
    International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; 505 - 520.

    More information

  217. Authors: Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Hössinger, S. Selberherr:
    "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
    Mathematics and Computers in Simulation, 66 (2004), 2-3; 219 - 230.

    More information

  218. Authors: Clemens Heitzinger, E360; Andreas Hössinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Hössinger, S. Selberherr:
    "On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 7; 879 - 883.

    More information

  219. Authors: Clemens Heitzinger, E360; Wolfgang Pyka, E360; N. Tamaoki; T. Takase; T. Ohmine; Siegfried Selberherr, E360

    C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
    "Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 3; 285 - 292.

    More information

  220. Authors: Clemens Heitzinger, E360; Ch. Ringhofer

    C. Heitzinger, Ch. Ringhofer:
    "A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation";
    Journal of Computational Electronics, 3 (2004), 1; 33 - 44.

    More information

  221. Authors: Clemens Heitzinger, E360; Ch. Ringhofer; Siegfried Selberherr, E360

    C. Heitzinger, Ch. Ringhofer, S. Selberherr:
    "Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities";
    Communications in Mathematical Sciences, 5 (2007), 4; 779 - 788.

    More information

  222. Authors: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
    Proceedings of SPIE, 4228 (2000), 279 - 289.

    More information

  223. Authors: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
    Microelectronics Journal, 33 (2002), 1-2; 61 - 68.

    More information

  224. Authors: Clemens Heitzinger, E360; Siegfried Selberherr, E360

    C. Heitzinger, S. Selberherr:
    "On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
    Microelectronics Journal, 35 (2004), 2; 167 - 171.

    More information

  225. Authors: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Fuad Badrieh; Helmut Puchner, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
    "Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process";
    IEEE Transactions on Electron Devices, 51 (2004), 7; 1129 - 1134.

    More information

  226. Authors: Clemens Heitzinger, E360; Alireza Sheikholeslami, E360; Jong Mun Park, E360; Siegfried Selberherr, E360

    C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
    "A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24 (2005), 10; 1485 - 1491.

    More information

  227. Authors: Yoanlys Hernandez, E360; Bernhard Stampfer, E360; Tibor Grasser, E360; Michael Waltl, E360

    Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl:
    "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies";
    Crystals, 11 (2021), 9; 1150-1 - 1150-9.

    More information

  228. Authors: Gerhard Hobler, E362; Erasmus Langer, E360; Siegfried Selberherr, E360

    G. Hobler, E. Langer, S. Selberherr:
    "Two-Dimensional Modeling of Ion Implantation with Spatial Moments";
    Solid-State Electronics, 30 (1987), 4; 445 - 455.

    More information

  229. Authors: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8 (1989), 5; 450 - 459.

    More information

  230. Authors: Gerhard Hobler, E362; Siegfried Selberherr, E360

    G. Hobler, S. Selberherr:
    "Two-Dimensional Modeling of Ion Implantation Induced Point Defects";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7 (1988), 2; 174 - 180.

    More information

  231. Authors: Andreas Hössinger, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    A. Hössinger, E. Langer, S. Selberherr:
    "Parallelization of a Monte Carlo Ion Implantation Simulator";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 5; 560 - 567.

    More information

  232. Authors: Stefan Holzer, E360; Christian Hollauer, E360; Hajdin Ceric, E360; Stephan Wagner, E360; Erasmus Langer, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
    "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
    Proceedings of SPIE, 5837 (2005), 380 - 387.

    More information

  233. Authors: Stefan Holzer, E360; R. Minixhofer; Clemens Heitzinger, E360; Johannes Fellner; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
    "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
    Microelectronics Journal, 35 (2004), 10; 805 - 810.

    More information

  234. Authors: Stefan Holzer, E360; Alireza Sheikholeslami, E360; Markus Karner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
    "Comparison of Deposition Models for a TEOS LPCVD Process";
    Microelectronics Reliability, 47 (2007), 4-5; 623 - 625.

    More information

  235. Authors: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Strain Induced Mobility Modulation in Single-Layer MoS2";
    Journal of Physics D: Applied Physics, 48 (2015), 37; 375104-1 - 375104-11.

    More information

  236. Authors: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( M = Mo, W ; X = S , Se)";
    IEEE Transactions on Electron Devices, 62 (2015), 10; 3192 - 3198.

    More information

  237. Authors: Manouchehr Hosseini; Mohammad Elahi; Mahdi Pourfath, E360; D. Esseni

    M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
    "Very Large Strain Gauges Based on Single Layer MoSe2 and WSe2 for Sensing Applications";
    Applied Physics Letters, 107 (2015), 25; 253503-1 - 253503-4.

    More information

  238. Authors: R Huang; W. Robl; Hajdin Ceric, E360; T. Detzel; G. Dehm

    R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm:
    "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing";
    IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; 47 - 54.

    More information

  239. Authors: R Huang; A. Taylor; S. Himmelsbach; Hajdin Ceric, E360; T. Detzel

    R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel:
    "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing";
    Measurement Science & Technology, 21 (2010), 5; 55702 - 55710.

  240. Authors: Yuri Illarionov; Theresia Knobloch, E360; Tibor Grasser, E360

    Y. Illarionov, T. Knobloch, T. Grasser:
    "Inorganic Molecular Crystals for 2D Electronics";
    Nature Electronics, 4 (2022), 12; 870 - 871.

    More information

  241. Authors: Yury Illarionov, E360; A. G. Banshchikov; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; Theresia Knobloch, E360; Michael Thesberg, E360; Lukas Mennel, E387-01; Matthias Paur, E387-01; Michael Stöger-Pollach, E057-02; Andreas Steiger-Thirsfeld, E057-02; M. I. Vexler; Michael Waltl, E360; N. S. Sokolov; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
    "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
    Nature Electronics, 2 (2019), 230 - 235.

    More information

  242. Authors: Yury Illarionov, E360; A. G. Banshchikov; Dmitry K. Polyushkin, E387-01; Stefan Wachter, E387-01; Theresia Knobloch, E360; Michael Thesberg, E360; M. I. Vexler; Michael Waltl, E360; Mario Lanza; N. S. Sokolov; Alexander Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
    "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
    2D Materials, 6 (2019), 4; 045004.

    More information

  243. Authors: Yury Illarionov, E360; A. G. Banshchikov; N. S. Sokolov; Stefan Wachter, E387-01; M. I. Vexler

    Yu. Illarionov, A. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler:
    "Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)";
    Technical Physics Letters, 44 (2018), 12; 1188 - 1191.

    More information

  244. Authors: Yury Illarionov, E360; Markus Bina; S. E. Tyaginov, E360; Tibor Grasser, E360

    Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
    "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs";
    Japanese Journal of Applied Physics, 53 (2014), 04EC22-1 - 04EC22-4.

    More information

  245. Authors: Yury Illarionov, E360; Markus Bina; S. E. Tyaginov, E360; Karina Rott; Ben Kaczer; H. Reisinger; Tibor Grasser, E360

    Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
    "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
    IEEE Transactions on Electron Devices, 62 (2015), 9; 2730 - 2737.

    More information

  246. Authors: Yury Illarionov, E360; Theresia Knobloch, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, T. Grasser:
    "Crystalline Insulators for Scalable 2D Nanoelectronics";
    Solid-State Electronics, 185 (2021), 108043-1 - 108043-3.

    More information

  247. Authors: Yury Illarionov, E360; Theresia Knobloch, E360; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, T. Grasser:
    "Native High-k Oxides for 2D Transistors";
    Nature Electronics, 3 (2020), 442 - 443.

    More information

  248. Authors: Yury Illarionov, E360; Theresia Knobloch, E360; Markus Jech, E360; Mario Lanza; D. Akinwande; M. I. Vexler; Thomas Müller, E387-01; M Lemme; G Fiori; Frank Schwierz, TU Ilmenau; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser:
    "Insulators for 2D Nanoelectronics: The Gap to Bridge";
    Nature Communications, 11 (2020), 3385.

    More information

  249. Authors: Yury Illarionov, E360; Theresia Knobloch, E360; Michael Waltl, E360; Gerhard Rzepa, E360; Andreas Pospischil, E387-01; Dmitry K. Polyushkin, E387-01; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
    "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
    2D Materials, 4 (2017), 2; 025108-1 - 025108-10.

    More information

  250. Authors: Yury Illarionov, E360; Gerhard Rzepa, E360; Michael Waltl, E360; Theresia Knobloch, E360; Alexander Grill, E360; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
    "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
    2D Materials, 3 (2016), 3; 035004-1 - 035004-10.

    More information

  251. Authors: Yury Illarionov, E360; A.D. Smith; S. Vaziri; M. Ostling; Thomas Müller, E387-01; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
    "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
    Applied Physics Letters, 105 (2014), 14; 1435071 - 1435075.

    More information

  252. Authors: Yury Illarionov, E360; Anderson Smith; S. Vaziri; M. Ostling; Thomas Müller, E387-01; M Lemme; Tibor Grasser, E360

    Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
    "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
    IEEE Transactions on Electron Devices, 62 (2015), 11; 3876 - 3881.

    More information

  253. Authors: Yury Illarionov, E360; Kirby K.H. Smithe; Michael Waltl, E360; Theresia Knobloch, E360; Eric Pop; Tibor Grasser, E360

    Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
    "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
    IEEE Electron Device Letters, 38 (2017), 12; 1763 - 1766.

    More information

  254. Authors: Yury Illarionov, E360; M. I. Vexler; V. V. Fedorov; S. M. Suturin; N. S. Sokolov

    Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
    "Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes";
    Journal of Applied Physics, 115 (2014), 223706-1 - 223706-5.

    More information

  255. Authors: Yury Illarionov, E360; M. I. Vexler; V. V. Fedorov; S. M. Suturin; N. S. Sokolov

    Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
    "Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer";
    Thin Solid Films, 545 (2013), 580 - 583.

    More information

  256. Authors: Yury Illarionov, E360; M. I. Vexler; Markus Karner, E360; S. E. Tyaginov, E360; Johann Cervenka, E360; Tibor Grasser, E360

    Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
    "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
    Current Applied Physics, 15 (2015), 78 - 83.

    More information

  257. Authors: Yury Illarionov, E360; Michael Waltl, E360; Gerhard Rzepa, E360; J.-S. Kim; Seohee Kim; Ananth Dodabalapur; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
    "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
    ACS Nano, 10 (2016), 10; 9543 - 9549.

    More information

  258. Authors: Yury Illarionov, E360; Michael Waltl, E360; Gerhard Rzepa, E360; Theresia Knobloch, E360; J.-S. Kim; D. Akinwande; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
    "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
    npj 2D Materials and Applications, 1 (2017), 1; 23-1 - 23-7.

    More information

  259. Authors: Yury Illarionov, E360; Michael Waltl, E360; A.D. Smith; S. Vaziri; M. Ostling; M.C. Lemme; Tibor Grasser, E360

    Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
    "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
    Japanese Journal of Applied Physics, 55 (2016), 4S; 04EP03.

    More information

  260. Authors: Markus Jech, E360; Al-Moatasem El-Sayed, E360; S. E. Tyaginov, E360; A. L. Shluger; Tibor Grasser, E360

    M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
    "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces";
    Physical Review B, 100 (2019), 195302.

    More information

  261. Authors: Markus Jech, E360; Al-Moatasem El-Sayed, E360; S. E. Tyaginov, E360; Dominic Waldhör, E360; Foudhil Bouakline; Peter Saalfrank; Dominic Jabs; C. Jungemann; Michael Waltl, E360; Tibor Grasser, E360

    M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
    "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
    Physical Review Applied, 16 (2021), 1; 014026 -1 - 014026 -24.

    More information

  262. Authors: Markus Jech, E360; Gunnar Andreas Rott; H. Reisinger; S. E. Tyaginov; Gerhard Rzepa; Alexander Grill; Dominic Jabs; C. Jungemann; Michael Waltl, E360; Tibor Grasser, E360

    M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
    "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities";
    IEEE Transactions on Electron Devices, 67 (2020), 8; 3315 - 3322.

    More information

  263. Authors: Markus Jech, E360; Prateek Sharma, E360; S. E. Tyaginov, E360; Florian Rudolf, E360; Tibor Grasser, E360

    M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
    "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
    Japanese Journal of Applied Physics, 55 (2016), 4S; 1 - 6.

    More information

  264. Authors: Markus Jech, E360; Bianka Ullmann, E360; Gerhard Rzepa, E360; S. E. Tyaginov, E360; Alexander Grill, E360; Michael Waltl, E360; Dominic Jabs; C. Jungemann; Tibor Grasser, E360

    M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
    "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
    IEEE Transactions on Electron Devices, 66 (2019), 1; 241 - 248.

    More information

  265. Authors: Xu Jing; Yury Illarionov, E360; Eilam Yalon; Peng Zhou; Tibor Grasser, E360; Yuanyuan Shi; Mario Lanza

    X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza:
    "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects";
    Advanced Functional Materials, 30 (2019), 18; 1901971.

    More information

  266. Authors: Xu Jing; Emanuel Panholzer; Xiaoxue Song; Enric Grustan-Gutierrez; Fei Hui; Yuanyuan Shi; Guenther Benstetter; Yury Illarionov, E360; Tibor Grasser, E360; Mario Lanza

    X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
    "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
    Nano Energy, 30 (2016), 494 - 502.

    More information

  267. Authors: Nils Petter Jorstad, E360; Simone Fiorentini, E360; Wilton Jaciel Loch, E360-01; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    N. Jorstad, S. Fiorentini, W.J. Loch, W. Goes, S. Selberherr, V. Sverdlov:
    "Finite Element Modeling of Spin-Orbit Torques";
    Solid-State Electronics, 194 (2022), 108323-1 - 108323-4.

    More information

  268. Authors: Werner Jüngling, E360; E. Guerrero; Siegfried Selberherr, E360

    W. Jüngling, E. Guerrero, S. Selberherr:
    "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation";
    COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3 (1984), 2; 79 - 105.

    More information

  269. Authors: Werner Jüngling, E360; P. Pichler, E366; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
    IEEE Transactions on Electron Devices, 32 (1985), 2; 156 - 167.

    More information

  270. Authors: Werner Jüngling, E360; P. Pichler, E366; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
    IEEE Journal of Solid-State Circuits, 20 (1985), 1; 76 - 87.

    More information

  271. Authors: C. Jungemann; Tibor Grasser, E360; Burkhard Neinhüs; Bernd Meinerzhagen

    C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
    "Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium";
    IEEE Transactions on Electron Devices, 52 (2005), 11; 2404 - 2408.

  272. Authors: M Jurkovic; Dagmar Gregusova; Vassil Palankovski, E360; S. Hascik; M. Blaho; Karol Cico; K. Frohlich; J.-F Carlin; Nicolas Grandjean; J. Kuzmik

    M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik:
    "Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region";
    IEEE Electron Device Letters, 34 (2013), 3; 432 - 434.

    More information

  273. Authors: Ben Kaczer; J. Franco; Ph. J. Roussel; G. Groeseneken; T. Chiarella; N. Horiguchi; Tibor Grasser, E360

    B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
    "Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
    IEEE Electron Device Letters, 36 (2015), 4; 300 - 302.

    More information

  274. Authors: Ben Kaczer; J. Franco; S. E. Tyaginov, E360; Markus Jech, E360; Gerhard Rzepa, E360; Tibor Grasser, E360; Barry J. O´Sullivan; Romain Ritzenhaler; Tom Schram; Alessio Spessot; D Linten; N. Horiguchi

    B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
    "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
    Journal of Vacuum Science & Technology B, 35 (2017), 1; 01A109-1 - 01A109-6.

    More information

  275. Authors: Ben Kaczer; J. Franco; P. Weckx; Ph. J. Roussel; Vamsi Putcha; E. Bury; Marko Simicic; A Chasin; D Linten; Bertrand Parvais; F. Catthoor; Gerhard Rzepa, E360; Michael Waltl, E360; Tibor Grasser, E360

    B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser:
    "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability";
    Microelectronics Reliability (invited), 81 (2018), 186 - 194.

    More information

  276. Authors: Ben Kaczer; J. Franco; P. Weckx; Ph. J. Roussel; Marko Simicic; Vamsi Putcha; E. Bury; M. Cho; R. Degraeve; D Linten; G. Groeseneken; Peter Debacker; Bertrand Parvais; P. Raghavan; F. Catthoor; Gerhard Rzepa, E360; Michael Waltl, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
    "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
    Solid-State Electronics, 125 (2016), 52 - 62.

    More information

  277. Authors: Ben Kaczer; Tibor Grasser, E360; J. Franco; M. Toledano-Luque; Ph. J. Roussel; M. Cho; E. Simoen; G. Groeseneken

    B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
    "Recent Trends in Bias Temperature Instability";
    Journal of Vacuum Science & Technology B (invited), 29 (2011), 01AB01-1 - 01AB01-7.

  278. Authors: Ben Kaczer; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
    IEEE Electron Device Letters, 31 (2010), 5; 411 - 413.

    More information

  279. Authors: Ben Kaczer; M. Toledano-Luque; Wolfgang Gös, E360; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken:
    "Gate Current Random Telegraph Noise and Single Defect Conduction";
    Microelectronic Engineering, 109 (2013), 123 - 125.

    More information

  280. Authors: Ben Kaczer; A. Veloso; Ph. J. Roussel; Tibor Grasser, E360; G. Groeseneken

    B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken:
    "Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks";
    Journal of Vacuum Science & Technology B, 27 (2009), 1; 459 - 462.

  281. Authors: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360

    G. Kaiblinger-Grujin, H. Kosina:
    "An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
    VLSI Design, 6 (1998), 1-4; 209 - 212.

    More information

  282. Authors: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Christian Köpf, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
    "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
    Materials Science Forum, 258-263 (1997), 939 - 944.

    More information

  283. Authors: Goran Kaiblinger-Grujin, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
    "Influence of the Doping Element on the Electron Mobility in n-Silicon";
    Journal of Applied Physics, 83 (1998), 6; 3096 - 3101.

    More information

  284. Authors: Markus Kampl, E360; Hans Kosina, E360

    M. Kampl, H. Kosina:
    "The Backward Monte Carlo Method for Semiconductor Device Simulation";
    Journal of Computational Electronics, 17 (2018), 4; 1492 - 1504.

    More information

  285. Authors: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mohsen Karami Taheri; R. Faez; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina:
    "Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method";
    Journal of Electronic Materials, 42 (2013), 7; 2091 - 2097.

    More information

  286. Authors: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires";
    Journal of Applied Physics, 115 (2014), 024302_1 - 024302_7.

    More information

  287. Authors: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation";
    Journal of Applied Physics, 113 (2013), 20; 204305-1 - 204305-9.

    More information

  288. Authors: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, H. Kosina:
    "Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires";
    Journal of Electronic Materials, 1 (2013), 1 - 8.

    More information

  289. Authors: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina:
    "Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons";
    Journal of Applied Physics, 111 (2012), 5; 054501-1 - 054501-9.

    More information

  290. Authors: Hossein Karamitaheri, E360; Neophytos Neophytou, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
    "Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method";
    Journal of Computational Electronics (invited), 11 (2012), 1; 14 - 21.

    More information

  291. Authors: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons";
    IEEE Transactions on Electron Devices, 60 (2013), 7; 2142 - 2147.

    More information

  292. Authors: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
    "Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices";
    Journal of Applied Physics, 110 (2011), 5; 054506-1 - 054506-6.

    More information

  293. Authors: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; Hans Kosina, E360; Neophytos Neophytou, E360

    H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou:
    "Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons";
    Physical Review B, 91 (2015), 16; 165410-1 - 165410-15.

    More information

  294. Authors: Hossein Karamitaheri, E360; Mahdi Pourfath, E360; M. Pazoki; R. Faez; Hans Kosina, E360

    H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina:
    "Graphene-Based Antidots for Thermoelectric Applications";
    Journal of the Electrochemical Society, 158 (2011), 12; K213 - K216.

    More information

  295. Authors: G.G. Kareva; M. I. Vexler; Yury Illarionov, E360

    G.G. Kareva, M. I. Vexler, Yu. Illarionov:
    "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
    Microelectronic Engineering, 109 (2013), 270 - 273.

    More information

  296. Authors: Gerhard Karlowatz, E360; Wilfried Wessner, E360; Hans Kosina, E360

    G. Karlowatz, W. Wessner, H. Kosina:
    "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
    Mathematics and Computers in Simulation, 79 (2008), 972 - 979.

    More information

  297. Authors: Markus Karner, E360; Andreas Gehring, E360; Stefan Holzer, E360; Mahdi Pourfath, E360; Martin Wagner, E360; Wolfgang Gös, E360; Martin Vasicek, E360; Oskar Baumgartner, E360; Christian Kernstock; Klaus Schnass; Gerhard Zeiler; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
    "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
    Journal of Computational Electronics, 6 (2007), 1-3; 179 - 182.

    More information

  298. Authors: Markus Karner, E360; Andreas Gehring, E360; Hans Kosina, E360

    M. Karner, A. Gehring, H. Kosina:
    "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
    Journal of Computational Electronics, 5 (2006), 161 - 165.

    More information

  299. Authors: Markus Karner, E360; Andreas Gehring, E360; Martin Wagner, E360; Robert Entner, E360; Stefan Holzer, E360; Wolfgang Gös, E360; Martin Vasicek, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
    "VSP - A Gate Stack Analyzer";
    Microelectronics Reliability, 47 (2007), 4-5; 704 - 708.

    More information

  300. Authors: Wolfgang Kausel, E360; J.O. Nylander; Gerd Nanz, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl:
    "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts";
    Microelectronics Journal, 21 (1990), 5; 5 - 21.

    More information

  301. Authors: Wolfgang Kausel, E360; Hans Pötzl, E366; Gerd Nanz, E360; Siegfried Selberherr, E360

    W. Kausel, H. Pötzl, G. Nanz, S. Selberherr:
    "Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor";
    Solid-State Electronics, 32 (1989), 9; 685 - 709.

    More information

  302. Authors: Kaveh Khaliji; M. Noei; Seyed Mohammad Tabatabaei; Mahdi Pourfath, E360; M. Fathipour; Yaser Abdi

    K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi:
    "Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain";
    IEEE Transactions on Electron Devices, 60 (2013), 8; 2464 - 2470.

    More information

  303. Authors: N. Khalil; John Faricelli; D. Bell; Siegfried Selberherr, E360

    N. Khalil, J. Faricelli, D. Bell, S. Selberherr:
    "The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling";
    IEEE Electron Device Letters, 16 (1995), 1; 17 - 19.

    More information

  304. Authors: N. Khalil; John Faricelli; C.-L. Huang; Siegfried Selberherr, E360

    N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
    "Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
    Journal of Vacuum Science & Technology B, 14 (1996), 1; 224 - 230.

    More information

  305. Authors: Sajid Khan; Ambika Shah, E360; Shailesh Singh Chouhan; Neha Gupta; Jai Gopal Pandey; Santosh Kumar Vishvakarma

    S. Khan, A. Shah, S. Chouhan, N. Gupta, J. Pandey, S. Vishvakarma:
    "A Symmetric D Flip-Flop Based PUF with Improved Uniqueness";
    Microelectronics Reliability, 106 (2020), 113595.

    More information

  306. Authors: Sajid Khan; Ambika Shah, E360; Neha Gupta; Shailesh Singh Chouhan; Jai Gopal Pandey; Santosh Kumar Vishvakarma

    S. Khan, A. Shah, N. Gupta, S. Chouhan, J. Pandey, S. Vishvakarma:
    "An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications";
    Microelectronics Journal, 92 (2019), 104605.

    More information

  307. Authors: Sang-Cheol Kim; W Bahng; N.-K. Kim; E.-D. Kim; Tesfaye Ayalew, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
    "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
    Materials Science Forum, 483-485 (2005), 793 - 796.

    More information

  308. Authors: Yusuf Kinkhabwala; Viktor Sverdlov, E360; Alexander N Korotkov; Konstantin Likharev

    Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev:
    "A Numerical Study of Transport and Shot Noise in 2D Hopping";
    Journal of Physics: Condensed Matter, 18 (2006), 1999 - 2012.

  309. Authors: Yusuf Kinkhabwala; Viktor Sverdlov, E360; Konstantin Likharev

    Y. Kinkhabwala, V. Sverdlov, K. Likharev:
    "A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport";
    Journal of Physics: Condensed Matter, 18 (2006), 2013 - 2027.

  310. Authors: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 12; 1431 - 1438.

    More information

  311. Authors: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Photolithography Simulation";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 6; 1 - 37.

    More information

  312. Authors: Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    H. Kirchauer, S. Selberherr:
    "Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination";
    Proceedings of SPIE, 3334 (1998), 764 - 776.

    More information

  313. Authors: M Kittler; Manfred Reiche; Bernhard Schwartz; H Uebensee; Hans Kosina, E360; Zlatan Stanojevic; Oskar Baumgartner; Thomas Ortlepp

    M. Kittler, M. Reiche, B. Schwartz, H. Uebensee, H. Kosina, Z. Stanojevic, O. Baumgartner, T. Ortlepp:
    "Transport of Charge Carriers along Dislocations in Si and Ge";
    Physica Status Solidi A, 216 (2019), 17; 1900287.

    More information

  314. Authors: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures";
    Computer Methods in Applied Mechanics and Engineering, 386 (2021), 114196-1 - 114196-22.

    More information

  315. Authors: Xaver Klemenschits, E360; Siegfried Selberherr, E360; Lado Filipovic, E360

    X. Klemenschits, S. Selberherr, L. Filipovic:
    "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review";
    Micromachines (invited), 9 (2018), 12; 631-1 - 631-31.

    More information

  316. Authors: Martin Knaipp, E360; Werner Kanert; Siegfried Selberherr, E360

    M. Knaipp, W. Kanert, S. Selberherr:
    "Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
    Solid-State Electronics, 44 (2000), 7; 1135 - 1143.

    More information

  317. Authors: Theresia Knobloch, E360; Uzlu Burkay, Aachen University; Yury Illarionov, E360; Zhenxing Wang, AMO GmbH, Aachen, G; Martin Otto, AMO GmbH, Aachen, Ge; Lado Filipovic, E360; Michael Waltl, E360; Daniel Neumaier, AMO GmbH, Germany; Max C Lemme, Aachen University; Tibor Grasser, E360

    T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
    "Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning";
    Nature Electronics, 5 (2022), 356 - 366.

    More information

  318. Authors: Theresia Knobloch, E360; Yury Illarionov, E360; Fabian Ducry; Christian Schleich, E360; Stefan Wachter, E362; Kenji Watanabe; Takashi Taniguchi; Thomas Müller, E387-01; Michael Waltl, E360; Mario Lanza; M. I. Vexler; Mathieu Luisier; Tibor Grasser, E360

    T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
    "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
    Nature Electronics, 4 (2021), 2; 98 - 108.

    More information

  319. Authors: Theresia Knobloch, E360; Gerhard Rzepa, E360; Yury Illarionov, E360; Michael Waltl, E360; F. Schanovski; Bernhard Stampfer, E360; Marco Mercurio Furchi, E387-01; Thomas Müller, E387-01; Tibor Grasser, E360

    T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
    "A Physical Model for the Hysteresis in MoS2 Transistors";
    IEEE Journal of the Electron Devices Society, 6 (2018), 1; 972 - 978.

    More information

  320. Authors: Theresia Knobloch, E360; Siegfried Selberherr, E360; Tibor Grasser, E360

    T. Knobloch, S. Selberherr, T. Grasser:
    "Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials";
    Nanomaterials (invited), 12 (2022), 3548.

    More information

  321. Authors: Christian Köpf, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    C. Köpf, H. Kosina, S. Selberherr:
    "Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
    Solid-State Electronics, 41 (1997), 8; 1139 - 1152.

    More information

  322. Authors: Robert Kosik, E360; Johann Cervenka, E360; Hans Kosina, E360

    R. Kosik, J. Cervenka, H. Kosina:
    "Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation";
    Journal of Computational Electronics, 20 (2021), 6; 2052 - 2061.

    More information

  323. Authors: Robert Kosik, E360; Peter Fleischmann, E360; Bernhard Haindl, E384; P. Pietra; Siegfried Selberherr, E360

    R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr:
    "On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 11; 1233 - 1240.

    More information

  324. Author: Hans Kosina, E360

    H. Kosina:
    "A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis";
    IEEE Transactions on Electron Devices, 46 (1999), 6; 1196 - 1200.

  325. Author: Hans Kosina, E360

    H. Kosina:
    "Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations";
    Physica Status Solidi A, 163 (1997), 2; 475 - 489.

  326. Author: Hans Kosina, E360

    H. Kosina:
    "Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
    International Journal of High Speed Electronics and Systems, 17 (2007), 3; 475 - 484.

    More information

  327. Author: Hans Kosina, E360

    H. Kosina:
    "Wigner function approach to nano device simulation";
    International Journal of Computational Science and Engineering, 2 (2006), 3/4; 100 - 118.

    More information

  328. Authors: Hans Kosina, E360; Markus Gritsch, E360; Tibor Grasser, E360; Siegfried Selberherr, E360; T. Linton; S. Yu; M. Giles

    H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
    "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
    Journal of Computational Electronics, 1 (2002), 3; 371 - 374.

    More information

  329. Authors: Hans Kosina, E360; Manfred Harrer

    H. Kosina, M. Harrer:
    "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
    VLSI Design, 6 (1998), 1-4; 205 - 208.

    More information

  330. Authors: Hans Kosina, E360; Goran Kaiblinger-Grujin, E360

    H. Kosina, G. Kaiblinger-Grujin:
    "Ionized-Impurity Scattering of Majority Electrons in Silicon";
    Solid-State Electronics, 42 (1998), 3; 331 - 338.

    More information

  331. Authors: Hans Kosina, E360; Erasmus Langer, E360; Siegfried Selberherr, E360

    H. Kosina, E. Langer, S. Selberherr:
    "Device Modelling for the 1990s";
    Microelectronics Journal (invited), 26 (1995), 2-3; 217 - 233.

    More information

  332. Authors: Hans Kosina, E360; Mihail Nedjalkov; Siegfried Selberherr, E360

    H. Kosina, M Nedjalkov, S. Selberherr:
    "Solution of the Space-dependent Wigner Equation Using a Particle Model";
    Monte Carlo Methods and Applications, 10 (2004), 3-4; 359 - 368.

    More information

  333. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360

    H. Kosina, M. Nedjalkov:
    "Particle Models for Device Simulation";
    International Journal of High Speed Electronics and Systems (invited), 13 (2003), 13; 727 - 769.

  334. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360

    H. Kosina, M. Nedjalkov:
    "The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices";
    Mathematics and Computers in Simulation, 55 (2001), 93 - 102.

  335. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
    Journal of Applied Physics, 87 (2000), 9; 4308 - 4314.

    More information

  336. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
    Journal of Computational Electronics, 2 (2003), 2-4; 147 - 151.

    More information

  337. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "An Event Bias Technique for Monte Carlo Device Simulation";
    Mathematics and Computers in Simulation, 62 (2003), 3-6; 367 - 375.

    More information

  338. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "The Stationary Monte Carlo Method for Device Simulation. I. Theory";
    Journal of Applied Physics, 93 (2003), 6; 3553 - 3563.

    More information

  339. Authors: Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    H. Kosina, M. Nedjalkov, S. Selberherr:
    "Theory of the Monte Carlo Method for Semiconductor Device Simulation";
    IEEE Transactions on Electron Devices, 47 (2000), 10; 1898 - 1908.

    More information

  340. Authors: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13 (1994), 2; 201 - 210.

    More information

  341. Authors: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors";
    Japanese Journal of Applied Physics, 29 (1990), 12; L2283 - L2285.

    More information

  342. Authors: Hans Kosina, E360; Siegfried Selberherr, E360

    H. Kosina, S. Selberherr:
    "Device Simulation Demands of Upcoming Microelectronic Devices";
    International Journal of High Speed Electronics and Systems, 16 (2006), 1; 115 - 136.

    More information

  343. Authors: Hans Kosina, E360; Christian Troger, E360

    H. Kosina, C. Troger:
    "SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands";
    VLSI Design, 8 (1998), 1-4; 489 - 493.

    More information

  344. Authors: Tejas Krishnamohan; C. Jungemann; Donghyun Kim; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360; A.-T Pham; Bernd Meinerzhagen; Philip Wong; Y Nishida; Krishna Saraswat

    T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat:
    "High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs";
    Microelectronic Engineering, 84 (2007), 9-10; 2063 - 2066.

    More information

  345. Authors: J. Kuzmik; Milan Tapajna; Lukas Válik; Marian Molnar, E360; D Donoval; Clement Fleury, E362; Dionyz Pogany, E362; Gottfried Strasser, E362; O Hilt; Frank Brunner; Joachim Würfl

    J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl:
    "Self-Heating in GaN Transistors Designed for High-Power Operation";
    IEEE Transactions on Electron Devices, 61 (2014), 10; 3429 - 3434.

    More information

  346. Authors: Jan Kuzmik, E362; Stanislav Vitanov, E360; C Dua; Jean-François Carlin; Clemens Ostermaier, E362; Alexander Alexewicz, E362; Gottfried Strasser, E362; Dionyz Pogany, E362; Erich Gornik, E362; Nicolas Grandjean; S.L. Delage; Vassil Palankovski, E360

    J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski:
    "Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors";
    Japanese Journal of Applied Physics, 51 (2012), 054102-1 - 054102-5.

    More information

  347. Authors: Ayoub Lahlalia, E360; Lado Filipovic, E360; Siegfried Selberherr, E360

    A. Lahlalia, L. Filipovic, S. Selberherr:
    "Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices";
    IEEE Sensors Journal, 18 (2018), 5; 1960 - 1970.

    More information

  348. Authors: Ayoub Lahlalia, E360; Olivier Le Neel; Ravi Shankar; Shian-Yeu Kam; Lado Filipovic, E360

    A. Lahlalia, O. Le Neel, R. Shankar, S.-Y. Kam, L. Filipovic:
    "Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors";
    Journal Of Microelectromechanical Systems, 27 (2018), 3; 529 - 537.

    More information

  349. Authors: Ayoub Lahlalia, E360; Oliver Le Neel; Ravi Shankar; Siegfried Selberherr, E360; Lado Filipovic, E360

    A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
    "Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices";
    Sensors, 19 (2019), 2; 374-1 - 374-14.

    More information

  350. Author: Erasmus Langer, E360

    E. Langer:
    "Fundamental Analysis of Surface Acoustic Wave Propagation";
    Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; 225 - 232.

  351. Author: Erasmus Langer, E360

    E. Langer:
    "Fundamental Analysis of Surface Acoustic Wave Propagation";
    International Journal of Engineering Science, 29 (1991), 3; 331 - 343.

    More information

  352. Author: Erasmus Langer, E360

    E. Langer:
    "Special Issue on "Semiconductor devices and electronic circuit design"";
    Electrosoft, 1 (1990), 4.

  353. Authors: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "A Numerical Analysis of Bulk-Barrier Diodes";
    Solid-State Electronics, 25 (1982), 4; 317 - 324.

    More information

  354. Authors: Erasmus Langer, E360; Siegfried Selberherr, E360; H. Mader

    E. Langer, S. Selberherr, H. Mader:
    "Numerische Analyse der Bulk-Barrier Diode";
    Archiv für Elektronik und Übertragungstechnik, 36 (1982), 2; 86 - 91.

  355. Authors: Erasmus Langer, E360; Siegfried Selberherr, E360; Peter A. Markowich; Ch. Ringhofer

    E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
    "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
    Sensors and Actuators, 4 (1983), 1; 71 - 76.

    More information

  356. Authors: Ernst Leitner, E360; Siegfried Selberherr, E360

    E. Leitner, S. Selberherr:
    "Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 7; 561 - 572.

    More information

  357. Authors: P. M. Lenahan; B. Knowlton; J. F. Conley; B. Tonti; J. Suehle; Tibor Grasser, E360

    P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser:
    "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop";
    IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; 490.

  358. Authors: Christoph Lenz, E360; Alexander Toifl, E360; Michael Quell, E360; Francio Rodrigues, E360; Andreas Hössinger; Josef Weinbub, E360

    C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub:
    "Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
    Solid-State Electronics (invited), 191 (2022), 108258-1 - 108258-8.

    More information

  359. Authors: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Analytical Conductivity Model for Doped Organic Semiconductors";
    Journal of Applied Physics, 101 (2007), 033716; 1 - 4.

    More information

  360. Authors: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Carrier Concentration Dependence of the Mobility in Organic Semiconductors";
    Synthetic Metals, 157 (2007), 243 - 246.

    More information

  361. Authors: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes";
    Applied Physics Letters, 91 (2007), 17; 1 - 3.

    More information

  362. Authors: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Influence of Traps on Charge Transport in Organic Semiconductors";
    Solid-State Electronics, 51 (2007), 445 - 448.

    More information

  363. Authors: Ling Li, E360; Gregor Meller, E360; Hans Kosina, E360

    L. Li, G. Meller, H. Kosina:
    "Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors";
    Microelectronics Journal, 38 (2006), 1; 47 - 51.

    More information

  364. Authors: Wilton Jaciel Loch, E360-01; Simone Fiorentini, E360; Nils Petter Jorstad, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    W.J. Loch, S. Fiorentini, N. Jorstad, W. Goes, S. Selberherr, V. Sverdlov:
    "Double Reference Layer STT-MRAM Structures with Improved Performance";
    Solid-State Electronics, 194 (2022), 108335-1 - 108335-4.

    More information

  365. Authors: J. Lorenz; E. Bär; T. Clees; P. Evanschitzky; Roland Jancke; C. Kampen; U. Paschen; C. Salzig; Siegfried Selberherr, E360

    J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr:
    "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results";
    IEEE Transactions on Electron Devices (invited), 58 (2011), 8; 2227 - 2234.

    More information

  366. Authors: J. Lorenz; E. Bär; T. Clees; Roland Jancke; C. Salzig; Siegfried Selberherr, E360

    J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr:
    "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology";
    IEEE Transactions on Electron Devices (invited), 58 (2011), 8; 2218 - 2226.

    More information

  367. Authors: Bruno Lorenzi; Dario Narducci; R. Tonini; Stefano Frabboni; Gian Carlo Gazzadi; G. Ottaviani; Neophytos Neophytou, E360; Xanthippe Zianni

    B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
    "Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids";
    Journal of Electronic Materials, 43 (2014), 10; 3812 - 3816.

    More information

  368. Authors: Alois Lugstein, E362; Mathias Steinmair; Andreas Steiger-Thirsfeld, E362; Hans Kosina, E360; Emmerich Bertagnolli, E362

    A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
    "Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires";
    Nano Letters, 10 (2010), 3204 - 3208.

    More information

  369. Authors: J. Machek; Siegfried Selberherr, E360

    J. Machek, S. Selberherr:
    "A Novel Finite-Element Approach to Device Modeling";
    IEEE Transactions on Electron Devices, 30 (1983), 9; 1083 - 1092.

    More information

  370. Authors: Hiwa Mahmoudi, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, V. Sverdlov, S. Selberherr:
    "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
    Journal of Superconductivity and Novel Magnetism, 26 (2013), 5; 1745 - 1749.

    More information

  371. Authors: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
    Solid-State Electronics, 84 (2013), 191 - 197.

    More information

  372. Authors: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
    IEEE Transactions on Magnetics, 49 (2013), 12; 5620 - 5628.

    More information

  373. Authors: Hiwa Mahmoudi, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
    "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
    Advanced Materials Research - Print/CD, 854 (2014), 89 - 95.

    More information

  374. Authors: Alexander Makarov, E360; Ben Kaczer; A Chasin; Michiel Vandemaele; E. Bury; Markus Jech, E360; Alexander Grill; Geert Hellings; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
    "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
    IEEE Electron Device Letters, 40 (2019), 10; 1579 - 1582.

    More information

  375. Authors: Alexander Makarov, E360; Ben Kaczer; Philippe Roussel; A Chasin; Alexander Grill; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed, E360; Tibor Grasser, E360; D Linten; S. E. Tyaginov, E360

    A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
    "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
    IEEE Electron Device Letters, 40 (2019), 6; 870 - 873.

    More information

  376. Authors: Alexander Makarov, E360; Philippe Roussel; Erik Bury; Michiel Vandemaele; Alessio Spessot; Dimitri Linten; Ben Kaczer; S. E. Tyaginov, E360

    A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
    "Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach";
    Micromachines, 11 (2020), 7; 675.

    More information

  377. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
    IEEE Transactions on Magnetics, 48 (2012), 4; 1289 - 1292.

    More information

  378. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Dimitry Osintsev, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
    "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
    Physica Status Solidi - Rapid Research Letters, 5 (2011), 12; 420 - 422.

    More information

  379. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
    Microelectronics Reliability (invited), 52 (2012), 4; 628 - 634.

    More information

  380. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
    International Journal of High Speed Electronics and Systems (invited), 23 (2014), 3&4; 1450014-1 - 1450014-15.

    More information

  381. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
    Journal of Vacuum Science & Technology B, 29 (2011), 1; 01AD03-1 - 01AD03-5.

    More information

  382. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
    Journal of Computational Electronics, 9 (2010), 3-4; 146 - 152.

    More information

  383. Authors: Alexander Makarov, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, V. Sverdlov, S. Selberherr:
    "Structural Optimization of MTJs with a Composite Free Layer";
    Proceedings of SPIE (invited), 8813 (2013), 88132Q-1 - 88132Q-9.

    More information

  384. Authors: Alexander Makarov, E360; S. E. Tyaginov, E360; Ben Kaczer; Markus Jech, E360; A Chasin; Alexander Grill; Geert Hellings; M. I. Vexler; D Linten; Tibor Grasser, E360

    A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
    "Analysis of the Features of Hot-Carrier Degradation in FinFETs";
    Semiconductors (Physics of Semiconductor Devices), 52 (2018), 10; 1177 - 1182.

    More information

  385. Authors: Alexander Makarov, E360; Thomas Windbacher, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
    "CMOS-Compatible Spintronic Devices: A Review";
    Semiconductor Science and Technology (invited), 31 (2016), 11; 113006-1 - 113006-25.

    More information

  386. Authors: Negin Manavizadeh; Farshid Raissi; E.A. Soleimani; Mahdi Pourfath, E360; Siegfried Selberherr, E360

    N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr:
    "Performance Assessment of Nanoscale Field Effect Diodes";
    IEEE Transactions on Electron Devices, 58 (2011), 8; 2378 - 2384.

    More information

  387. Authors: Paul Manstetten, E360; Lado Filipovic, E360; Andreas Hössinger; Josef Weinbub, E360; Siegfried Selberherr, E360

    P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
    "Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
    Solid-State Electronics (invited), 128 (2017), 2; 141 - 147.

    More information

  388. Authors: Paul Manstetten, E360; Josef Weinbub, E360; Andreas Hössinger; Siegfried Selberherr, E360

    P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr:
    "Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces";
    Procedia Computer Science, 108 (2017), 245 - 254.

    More information

  389. Authors: Peter A. Markowich; Ch. Ringhofer; Erasmus Langer, E360; Siegfried Selberherr, E360

    P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr:
    "An Asymptotic Analysis of Single-Junction Semiconductor Devices";
    MRC Technical Summary Report, 2527 (1983), 1 - 62.

  390. Authors: Peter A. Markowich; Ch. Ringhofer; Siegfried Selberherr, E360

    P. Markowich, Ch. Ringhofer, S. Selberherr:
    "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices";
    MRC Technical Summary Report, 2482 (1983), 1 - 50.

  391. Authors: Peter A. Markowich; Ch. Ringhofer; Siegfried Selberherr, E360; Erasmus Langer, E360

    P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer:
    "A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device";
    MRC Technical Summary Report, 2388 (1982), 1 - 57.

  392. Authors: Peter A. Markowich; Ch. Ringhofer; Siegfried Selberherr, E360; M. Lentini

    P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini:
    "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations";
    IEEE Transactions on Electron Devices, 30 (1983), 9; 1165 - 1180.

    More information

  393. Authors: Peter A. Markowich; Siegfried Selberherr, E360

    P. Markowich, S. Selberherr:
    "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
    Matematica Aplicada e Computacional, 3 (1984), 2; 131 - 156.

  394. Authors: S. Maroldt; Dirk Wiegner; Stanislav Vitanov, E360; Vassil Palankovski, E360; Rüdiger Quay, E360; O. Ambacher

    S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher:
    "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz";
    IEICE Transactions on Electronics, E93-C (2010), 8; 1238 - 1244.

  395. Authors: K. Martens; Ben Kaczer; Tibor Grasser, E360; B. De Jaeger; M. Meuris; H.E. Maes; G. Groeseneken

    K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken:
    "Applicability of Charge Pumping on Germanium MOSFETs";
    IEEE Electron Device Letters, 29 (2008), 12; 1364 - 1366.

    More information

  396. Authors: Rui Martins, E360; Wolfgang Pyka, E360; Rainer Sabelka, E360; Siegfried Selberherr, E360

    R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
    "High-Precision Interconnect Analysis";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 11; 1148 - 1159.

    More information

  397. Authors: Rui Martins, E360; Siegfried Selberherr, E360; F. Vaz

    R. Martins, S. Selberherr, F. Vaz:
    "A CMOS IC for Portable EEG Acquisition Systems";
    IEEE Transactions on Instrumentation and Measurement, 47 (1998), 5; 1191 - 1196.

    More information

  398. Authors: Christina Medina-Bailon; Toufik Sadi; Mihail Nedjalkov, E360; Hamilton Carillo-Nunez; Jaehyun Lee; Oves Badami; Vihar Georgiev; Siegfried Selberherr, E360; Asen Asenov

    C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov:
    "Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism";
    IEEE Electron Device Letters, 40 (2019), 10; 1571 - 1574.

    More information

  399. Authors: Gregor Meller, E360; Ling Li, E360; Stefan Holzer, E360; Hans Kosina, E360

    G. Meller, L. Li, S. Holzer, H. Kosina:
    "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
    Optical and Quantum Electronics, 38 (2006), 12-14; 993 - 1004.

    More information

  400. Authors: Gregor Meller, E360; Siegfried Selberherr, E360

    G. Meller, S. Selberherr:
    "Simulation of Injection Currents into Disordered Molecular Conductors";
    Materials Today: Proceedings, 5 (2018), 9; 17472 - 17477.

    More information

  401. Authors: Jan-Frederik Mennemann, E101-01; Ansgar Jüngel, E101-01; Hans Kosina, E360

    J.-F. Mennemann, A. Jüngel, H. Kosina:
    "Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator";
    Journal of Computational Physics, 239 (2013), 187 - 205.

    More information

  402. Authors: Jakob Michl, E360; Alexander Grill; Dominic Waldhör, E360; Wolfgang Goes, Silvaco; Ben Kaczer; Dimitri Linten; Bertrand Parvais; Bogdan Govoreanu; I Radu; Tibor Grasser, E360; Michael Waltl, E360

    J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
    "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
    IEEE Transactions on Electron Devices, 68 (2021), 12; 6372 - 6378.

    More information

  403. Authors: Jakob Michl, E360; Alexander Grill; Dominic Waldhör, E360; Wolfgang Goes, Silvaco; Ben Kaczer; Dimitri Linten; Bertrand Parvais; Bogdan Govoreanu; I Radu; Michael Waltl, E360; Tibor Grasser, E360

    J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
    "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
    IEEE Transactions on Electron Devices, 68 (2021), 12; 6365 - 6371.

    More information

  404. Authors: Richard T. Mills; Mark Adams; Satish Balay; Jed Brown; Alp Dener; Matthew Knepley; Scott Kruger; Hannah Morgan; Todd Munson; Karl Rupp, E360; Barry Smith; Stefano Zampini; H Zhang; J. Zhang

    R. Mills, M. Adams, S. Balay, J. Brown, A. Dener, M. Knepley, S. Kruger, H. Morgan, T. Munson, K. Rupp, B. Smith, S. Zampini, H. Zhang, J. Zhang:
    "Toward Performance-Portable PETSc for GPU-based Exascale Systems";
    Parallel Computing, 108 (2021), 102831-1 - 102831-16.

    More information

  405. Authors: Goran Milovanovic, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    G. Milovanovic, O. Baumgartner, H. Kosina:
    "On Open Boundary Conditions for Quantum Cascade Structures";
    Optical and Quantum Electronics, 41 (2009), 11-13; 921 - 932.

    More information

  406. Authors: Goran Milovanovic, E360; Hans Kosina, E360

    G. Milovanovic, H. Kosina:
    "A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation";
    Journal of Computational Electronics, 9 (2010), 3-4; 211 - 217.

    More information

  407. Authors: Ali Mojibpour; Mahdi Pourfath, E360; Hans Kosina, E360

    A. Mojibpour, M. Pourfath, H. Kosina:
    "Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers";
    Optics Express, 22 (2014), 17; 20607 - 20612.

    More information

  408. Authors: Marian Molnar, E360; D Donoval; J. Kuzmik; J Marek; A Chvala; P. Pribytny; Vaclav Mikolasek, E191-01; K. Rendek; Vassil Palankovski, E360

    M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski:
    "Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors";
    Applied Surface Science, 312 (2014), 157 - 161.

    More information

  409. Authors: Mahdi Moradinasab, E360; Hamed Nematian; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
    "Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons";
    Journal of Applied Physics, 111 (2012), 7; 074318-1 - 074318-9.

    More information

  410. Authors: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
    "Numerical Study of Graphene Superlattice-Based Photodetectors";
    IEEE Transactions on Electron Devices, 62 (2015), 2; 593 - 600.

    More information

  411. Authors: Mahdi Moradinasab, E360; Mahdi Pourfath, E360; Hans Kosina, E360

    M. Moradinasab, M. Pourfath, H. Kosina:
    "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
    IEEE Journal of Quantum Electronics, 51 (2015), 1; 1 - 7.

    More information

  412. Authors: Masoud Movahhedi, E360; Abdolali Abdipour; Hajdin Ceric, E360; Alireza Sheikholeslami, E360; Siegfried Selberherr, E360

    M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr:
    "Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method";
    IEEE Microwave and Wireless Components Letters, 17 (2007), 1; 10 - 12.

    More information

  413. Authors: Masoud Movahhedi, E360; Abdolali Abdipour; Alexandre Nentchev, E360; Mehdi Dehghan; Siegfried Selberherr, E360

    M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr:
    "Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method";
    IEEE Transactions on Microwave Theory and Techniques, 55 (2007), 6; 1322 - 1331.

    More information

  414. Authors: Mikio Mukai; Takaaki Tatsumi; N. Nakauchi; T. Kobayashi; K. Koyama; Y. Komatsu; Robert Bauer, E360; Gerhard Rieger, E360; Siegfried Selberherr, E360

    M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
    "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI";
    Technical Report of IEICE, 95 (1995), 223; 63 - 68.

  415. Authors: Gerd Nanz, E360; Peter Dickinger, E360; Siegfried Selberherr, E360

    G. Nanz, P. Dickinger, S. Selberherr:
    "Calculation of Contact Currents in Device Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11 (1992), 1; 128 - 136.

    More information

  416. Authors: Gerd Nanz, E360; Wolfgang Kausel, E360; Siegfried Selberherr, E360

    G. Nanz, W. Kausel, S. Selberherr:
    "Self-Adaptive Space and Time Grids in Device Simulation";
    International Journal for Numerical Methods in Engineering, 31 (1991), 7; 1357 - 1374.

    More information

  417. Authors: Dario Narducci; Bruno Lorenzi; Xanthippe Zianni; Neophytos Neophytou, E360; Stefano Frabboni; Gian Carlo Gazzadi; Alberto Roncaglia; Francesco Suriano

    D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano:
    "Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys";
    Physica Status Solidi A, 211 (2014), 6; 1255 - 1258.

    More information

  418. Authors: Sanaz Nazemi; Mahdi Pourfath, E360; Ebrahim Asl Soleimani; Hans Kosina, E360

    S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
    "On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals";
    Journal of Applied Physics, 118 (2015), 20; 205303-1 - 205303--6.

    More information

  419. Authors: Sanaz Nazemi; Mahdi Pourfath, E360; Ebrahim Asl Soleimani; Hans Kosina, E360

    S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
    "The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO2 Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study";
    Journal of Applied Physics, 114 (2016), 14; 144302-1 - 1444302-9.

    More information

  420. Authors: Mihail Nedjalkov, E360; Shaikh Ahmed; Dragica Vasileska

    M. Nedjalkov, S. Ahmed, D. Vasileska:
    "A Self-Consistent Event Biasing Scheme for Statistical Enhancement";
    Journal of Computational Electronics, 3 (2004), 3-4; 305 - 309.

  421. Authors: Mihail Nedjalkov, E360; E. Atanassov; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
    "Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
    Monte Carlo Methods and Applications, 10 (2004), 3-4; 461 - 468.

    More information

  422. Authors: Mihail Nedjalkov, E360; Ivan Dimov; H. Haug

    M. Nedjalkov, I. Dimov, H. Haug:
    "Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering";
    Physica Status Solidi B - Basic Solid State Physics, 209 (1998), 1; 109 - 121.

  423. Authors: Mihail Nedjalkov, E360; Paul Ellinghaus, E360; Josef Weinbub, E360; T. Sadi; A Asenov; Ivan Dimov; Siegfried Selberherr, E360

    M. Nedjalkov, P. Ellinghaus, J. Weinbub, T. Sadi, A. Asenov, I. Dimov, S. Selberherr:
    "Stochastic Analysis of Surface Roughness Models in Quantum Wires";
    Computer Physics Communications, 228 (2018), 30 - 37.

    More information

  424. Authors: Mihail Nedjalkov, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
    "Transient Model for Terminal Current Noise";
    Applied Physics Letters, 80 (2002), 4; 607 - 609.

    More information

  425. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360

    M. Nedjalkov, H. Kosina:
    "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
    Mathematics and Computers in Simulation, 55 (2001), 1-3; 191 - 198.

  426. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Robert Kosik, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
    "A Space Dependent Wigner Equation Including Phonon Interaction";
    Journal of Computational Electronics, 1 (2002), 1-2; 27 - 31.

    More information

  427. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Robert Kosik, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
    "A Wigner Equation with Quantum Electron-Phonon Interaction";
    Microelectronic Engineering, 63 (2002), 1-3; 199 - 203.

    More information

  428. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Philipp Schwaha, E360

    M. Nedjalkov, H. Kosina, P. Schwaha:
    "Device Modeling in the Wigner Picture";
    Journal of Computational Electronics, 9 (2010), 3-4; 218 - 223.

    More information

  429. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
    IEICE Transactions on Electronics, E83-C (2000), 8; 1218 - 1223.

  430. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Monte Carlo Algorithms for Stationary Device Simulation";
    Mathematics and Computers in Simulation, 62 (2003), 3-6; 453 - 461.

    More information

  431. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "Stochastic Interpretation of the Wigner Transport in Nanostructures";
    Microelectronics Journal, 34 (2003), 5-8; 443 - 445.

    More information

  432. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, S. Selberherr:
    "The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
    Journal of Applied Physics, 93 (2003), 6; 3564 - 3571.

    More information

  433. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Ivan Dimov

    M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
    "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
    VLSI Design, 13 (2001), 1-4; 405 - 411.

    More information

  434. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Ch. Ringhofer; D.K. Ferry

    M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
    "Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
    Physical Review B, 70 (2004), 115319; 1 - 16.

    More information

  435. Authors: Mihail Nedjalkov, E360; Hans Kosina, E360; Stephan Enzo Ungersböck, E360; Siegfried Selberherr, E360

    M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
    "A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
    Semiconductor Science and Technology, 19 (2004), 4; 226 - 228.

    More information

  436. Authors: Mihail Nedjalkov, E360; Philipp Schwaha, E360; Siegfried Selberherr, E360; J. M. Sellier; Dragica Vasileska

    M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska:
    "Wigner Quasi-Particle Attributes - An Asymptotic Perspective";
    Applied Physics Letters, 102 (2013), 16; 163113-1 - 163113-4.

    More information

  437. Authors: Mihail Nedjalkov, E360; Siegfried Selberherr, E360; D.K. Ferry; Dragica Vasileska; P. Dollfus; D. Querlioz; Ivan Dimov; P. Schwaha

    M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha:
    "Physical Scales in the Wigner-Boltzmann Equation";
    Annals of Physics, 328 (2013), 220 - 237.

    More information

  438. Authors: Mihail Nedjalkov, E360; Dragica Vasileska

    M. Nedjalkov, D. Vasileska:
    "Semi-Discrete 2D Wigner-Particle Approach";
    Journal of Computational Electronics, 7 (2008), 3; 222 - 225.

    More information

  439. Authors: Mihail Nedjalkov, E360; Dragica Vasileska; E. Atanassov; Vassil Palankovski, E360

    M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
    "Ultrafast Wigner Transport in Quantum Wires";
    Journal of Computational Electronics, 6 (2007), 235 - 238.

    More information

  440. Authors: Mihail Nedjalkov, E360; Dragica Vasileska; Ivan Dimov; G. Arsov

    M. Nedjalkov, D. Vasileska, I. Dimov, G. Arsov:
    "Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices";
    Monte Carlo Methods and Applications, 13 (2007), 4; 299 - 331.

    More information

  441. Authors: Mihail Nedjalkov, E360; Dragica Vasileska; D.K. Ferry; C. Jacoboni; Ch. Ringhofer; Ivan Dimov; Vassil Palankovski, E360

    M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski:
    "Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires";
    Physical Review B, 74 (2006), 3; 035311-1 - 035311-18.

    More information

  442. Authors: Mihail Nedjalkov, E360; Josef Weinbub, E360; Mauro Ballicchia, E360; Siegfried Selberherr, E360; Ivan Dimov; D.K. Ferry

    M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry:
    "Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform";
    Physical Review B, 99 (2019), 1; 014423-1 - 014423-16.

    More information

  443. Authors: Mihail Nedjalkov, E360; Josef Weinbub, E360; Paul Ellinghaus, E360; Siegfried Selberherr, E360

    M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
    "The Wigner Equation in the Presence of Electromagnetic Potentials";
    Journal of Computational Electronics, 14 (2015), 4; 888 - 893.

    More information

  444. Authors: Hamed Nematian; Mahdi Moradinasab, E360; Mahdi Pourfath, E360; M. Fathipour; Hans Kosina, E360

    H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
    "Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices";
    Journal of Applied Physics, 111 (2012), 093512-1 - 093512-6.

    More information

  445. Authors: Neophytos Neophytou, E360; Hossein Karamitaheri, E360; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers";
    Journal of Computational Electronics, 12 (2013), 4; 611 - 622.

    More information

  446. Authors: Neophytos Neophytou; Hossein Karamitaheri; Hans Kosina, E360

    N. Neophytou, H. Karamitaheri, H. Kosina:
    "Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study";
    Journal of Electronic Materials, 44 (2015), 6; 1599 - 1605.

    More information

  447. Authors: Neophytos Neophytou, E360; S.G. Kim; Gerhard Klimeck; Hans Kosina, E360

    N. Neophytou, S. Kim, G. Klimeck, H. Kosina:
    "On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias";
    Journal of Applied Physics, 107 (2010), 113701-1 - 113701-9.

    More information

  448. Authors: Neophytos Neophytou, E360; Gerhard Klimeck; Hans Kosina, E360

    N. Neophytou, G. Klimeck, H. Kosina:
    "Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities";
    Journal of Applied Physics, 109 (2011), 053721-1 - 053721-6.

    More information

  449. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation";
    Physical Review B, 84 (2011), 085313-1 - 085313-15.

    More information

  450. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors";
    IEEE Electron Device Letters, 33 (2012), 5; 652 - 654.

    More information

  451. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands";
    Solid-State Electronics, 70 (2012), 81 - 91.

    More information

  452. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires";
    Physical Review B, 83 (2011), 245305-1 - 245305-16.

    More information

  453. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Gated Si Nanowires for Large Thermoelectric Power Factors";
    Applied Physics Letters, 105 (2014), 7; 073119-1 - 5.

    More information

  454. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement";
    Applied Physics Letters, 99 (2011), 092110-1 - 092110-3.

    More information

  455. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis";
    Nano Letters, 10 (2010), 4913 - 4919.

    More information

  456. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels";
    Journal of Applied Physics, 112 (2012), 2; 024305-1 - 024305-6.

    More information

  457. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires";
    Journal of Computational Electronics (invited), 11 (2012), 1; 29 - 44.

    More information

  458. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires";
    Journal of Electronic Materials, 41 (2012), 6; 1305 - 1311.

    More information

  459. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Optimizing Thermoelectric Power Factor by Means of a Potential Barrier";
    Journal of Applied Physics, 114 (2013), 044315_1 - 044315-6.

    More information

  460. Authors: Neophytos Neophytou, E360; Hans Kosina, E360

    N. Neophytou, H. Kosina:
    "Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport";
    Journal of Electronic Materials, 40 (2011), 5; 753 - 758.

    More information

  461. Authors: Neophytos Neophytou; Michael Thesberg, E360

    N. Neophytou, M. Thesberg:
    "Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor";
    Journal of Computational Electronics (invited), 15 (2016), 1; 16 - 26.

    More information

  462. Authors: Neophytos Neophytou, E360; Martin Wagner, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
    "Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model";
    Journal of Electronic Materials, 39 (2010), 9; 1902 - 1908.

    More information

  463. Authors: Neophytos Neophytou, E360; Xanthippe Zianni; Hans Kosina, E360; Stefano Frabboni; Bruno Lorenzi; Dario Narducci

    N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
    "Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems";
    Journal of Electronic Materials, 43 (2013), 6; 1896 - 1904.

    More information

  464. Authors: Neophytos Neophytou, E360; Xanthippe Zianni; Hans Kosina, E360; Stefano Frabboni; Bruno Lorenzi; Dario Narducci

    N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
    "Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si";
    Nanotechnology, 24 (2013), 20; 205402.

    More information

  465. Authors: M. Noei; Mahdi Moradinasab, E360; M. Fathipour

    M. Noei, M. Moradinasab, M. Fathipour:
    "A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors";
    Physica E: Low-dimensional Systems and Nanostructures, 44 (2012), 7-8; 1780 - 1786.

    More information

  466. Authors: H. Noll; Siegfried Selberherr, E360

    H. Noll, S. Selberherr:
    "Zur Entwicklung der Mikroelektronik";
    Telematik, 4 (1998), 1; 2 - 6.

  467. Authors: J.O. Nylander; F. Masszi; Siegfried Selberherr, E360; S. Berg

    J.O. Nylander, F. Masszi, S. Selberherr, S. Berg:
    "Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity";
    Solid-State Electronics, 32 (1989), 5; 363 - 367.

    More information

  468. Authors: Nicolo Oliva; Yury Illarionov, E360; Emanuele Casu; Matteo Cavalieri; Theresia Knobloch, E360; Tibor Grasser, E360; Adrian Ionescu

    N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu:
    "Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric";
    IEEE Journal of the Electron Devices Society, 7 (2019), 1163 - 1169.

    More information

  469. Authors: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
    Microelectronics Reliability, 51 (2011), 1573 - 1577.

    More information

  470. Authors: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Analysis of Electromigration in Dual-Damascene Interconnect Structures";
    Journal Integrated Circuits and Systems, 4 (2009), 2; 67 - 72.

    More information

  471. Authors: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
    Journal of Computational Electronics, 7 (2008), 3; 128 - 131.

    More information

  472. Authors: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
    Microelectronics Reliability, 52 (2012), 1981 - 1986.

    More information

  473. Authors: Roberto Orio, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    R. Orio, H. Ceric, S. Selberherr:
    "Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
    Microelectronics Reliability (invited), 50 (2010), 6; 775 - 789.

    More information

  474. Authors: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Gös; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
    "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
    IEEE Journal of the Electron Devices Society, 9 (2021), 61 - 67.

    More information

  475. Authors: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
    Micromachines, 12 (2021), 4; 443.

    More information

  476. Authors: Roberto Orio, E360; Johannes Ender, E360; Simone Fiorentini, E360; Wolfgang Goes, Silvaco; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
    "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
    Solid-State Electronics (invited), 185 (2021), 108075.

    More information

  477. Authors: Roberto Orio, E360; Alexander Makarov, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
    Physica B: Condensed Matter, 578 (2020), 411743.

    More information

  478. Authors: Roberto Orio, E360; Alexander Makarov, E360; Siegfried Selberherr, E360; Wolfgang Goes, Silvaco; Johannes Ender, E360; Simone Fiorentini, E360; Viktor Sverdlov, E360

    R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
    "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
    Solid-State Electronics, 168 (2020), 107730-1 - 107730-7.

    More information

  479. Authors: Roberto Orio, E360; Siegfried Selberherr, E360; Viktor Sverdlov, E360

    R. Orio, S. Selberherr, V. Sverdlov:
    "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
    Proceedings of SPIE (invited), 11090 (2019), 110903F-1 - 110903F-6.

    More information

  480. Authors: F. Ortmann; S. Roche; J. C. Greer; G. Huhs; T. Shulthess; T. Deutsch; P. Weinberger; M. Payne; J. M. Sellier; J. Sprekels; Josef Weinbub, E360; Karl Rupp, E360; Mihail Nedjalkov, E360; Dragica Vasileska; E. Alfi nito; L. Reggiani; D. Guerra; D.K. Ferry; M. Saraniti; S.M. Goodnick; A. Kloes; L. Colombo; K. Lilja; J. Mateos; T. Gonzalez; E. Velazquez; P Palestri; A. Schenk; M. Macucci

    F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci:
    "Multi-Scale Modelling for Devices and Circuits";
    E-Nano Newsletter, Special Issue April 2012 (2012), 31 pages.

  481. Authors: Dimitry Osintsev, E360; Oskar Baumgartner, E360; Zlatan Stanojevic; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
    "Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
    Solid-State Electronics, 90 (2013), 34 - 38.

    More information

  482. Authors: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
    "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
    Sains Malaysiana, 42 (2013), 2; 205 - 211.

  483. Authors: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
    Advanced Materials Research - Print/CD, 854 (2014), 29 - 34.

    More information

  484. Authors: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, S. Selberherr:
    "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
    Solid-State Electronics, 112 (2015), 46 - 50.

    More information

  485. Authors: Dimitry Osintsev, E360; Viktor Sverdlov, E360; Zlatan Stanojevic; Alexander Makarov, E360; Siegfried Selberherr, E360

    D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
    "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
    Solid-State Electronics, 71 (2012), 25 - 29.

    More information

  486. Authors: C Ostermaier; Peter Willibald Lagger; G. Prechtl; Alexander Grill, E360; Tibor Grasser, E360; Dionyz Pogany, E362

    C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
    "Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs";
    Applied Physics Letters, 110 (2017), 173502; 1 - 4.

    More information

  487. Authors: Vassil Palankovski, E360; N. Belova; Tibor Grasser, E360; Helmut Puchner, E360; Sheldon Aronowitz; Siegfried Selberherr, E360

    V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
    "A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
    IEEE Transactions on Electron Devices, 48 (2001), 10; 2331 - 2336.

    More information

  488. Authors: Vassil Palankovski, E360; Goran Kaiblinger-Grujin, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
    "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
    Materials Science and Engineering B, 66 (1999), 1-3; 46 - 49.

    More information

  489. Authors: Vassil Palankovski, E360; Rüdiger Quay, E360; Siegfried Selberherr, E360

    V. Palankovski, R. Quay, S. Selberherr:
    "Industrial Application of Heterostructure Device Simulation";
    IEEE Journal of Solid-State Circuits (invited), 36 (2001), 9; 1365 - 1370.

    More information

  490. Authors: Vassil Palankovski, E360; G. Röhrer; Tibor Grasser, E360; Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
    "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
    Applied Surface Science, 224 (2004), 1-4; 361 - 364.

    More information

  491. Authors: Vassil Palankovski, E360; R. Schultheis; A. Bonacina; Siegfried Selberherr, E360

    V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
    "Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
    Radiation Effects and Defects in Solids, 156 (2001), 1-4; 261 - 265.

    More information

  492. Authors: Vassil Palankovski, E360; R. Schultheis; Siegfried Selberherr, E360

    V. Palankovski, R. Schultheis, S. Selberherr:
    "Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
    IEEE Transactions on Electron Devices, 48 (2001), 6; 1264 - 1269.

    More information

  493. Authors: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Critical Modeling Issues of SiGe Semiconductor Devices";
    Journal of Telecommunications and Information Technology (invited), 4 (2004), 1; 15 - 25.

    More information

  494. Authors: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Micro Materials Modeling in MINIMOS-NT";
    Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7 (2001), 4; 183 - 187.

    More information

  495. Authors: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "Rigorous Modeling of High-Speed Semiconductor Devices";
    Microelectronics Reliability (invited), 44 (2004), 6; 889 - 897.

    More information

  496. Authors: Vassil Palankovski, E360; Siegfried Selberherr, E360

    V. Palankovski, S. Selberherr:
    "The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
    Applied Surface Science, 224 (2004), 1-4; 312 - 319.

    More information

  497. Authors: Vassil Palankovski, E360; Sergey Vainshtein; Valentin Yuferev; Juha Kostamovaara; Vladimir Egorkin

    V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin:
    "Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs";
    Applied Physics Letters, 106 (2015), 18; 183505-1 - 183505-5.

    More information

  498. Authors: P Palestri; N Barin; D Brunel; C Busseret; A Campera; P Childs; F Driussi; C. Fiegna; G Fiori; R Gusmeroli; G Iannaccone; Markus Karner, E360; Hans Kosina, E360; Erasmus Langer, E360; C Majkusiak; C Monzio Compagnoni; A Poncet; E. Sangiorgi; L Selmi; A Spinelli; J Walczak

    P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak:
    "Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks";
    IEEE Transactions on Electron Devices, 54 (2007), 1; 106 - 114.

    More information

  499. Authors: Santo Papaleo, E360; Wolfhard Zisser, E360; Anderson P. Singulani; Hajdin Ceric, E360; Siegfried Selberherr, E360

    S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
    "Stress Evolution During Nanoindentation in Open TSVs";
    IEEE Transactions on Device and Materials Reliability, 16 (2016), 4; 470 - 474.

    More information

  500. Authors: Jong Mun Park, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
    "A Numerical Study of Partial-SOI LDMOSFETs";
    Solid-State Electronics, 47 (2003), 2; 275 - 281.

    More information

  501. Authors: Jong Mun Park, E360; Robert Klima, E360; Siegfried Selberherr, E360

    J.M. Park, R. Klima, S. Selberherr:
    "High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
    Microelectronics Journal, 35 (2004), 3; 299 - 304.

    More information

  502. Authors: Jong Mun Park, E360; Stephan Wagner, E360; Tibor Grasser, E360; Siegfried Selberherr, E360

    J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
    "New SOI Lateral Power Devices with Trench Oxide";
    Solid-State Electronics, 48 (2004), 6; 1007 - 1015.

    More information

  503. Authors: Christoph Pichler, E360; Richard Plasun, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
    "High-Level TCAD Task Representation and Automation";
    IEEE Journal of Technology Computer Aided Design, 1 (1997), 5; 1 - 30.

    More information

  504. Authors: Christoph Pichler, E360; Richard Plasun, E360; Rudolf Strasser, E360; Siegfried Selberherr, E360

    C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
    "Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools";
    IEEE Transactions on Semiconductor Manufacturing, 12 (1999), 1; 76 - 86.

    More information

  505. Authors: P. Pichler, E366; Werner Jüngling, E360; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC-Fabrication Steps";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4 (1985), 4; 384 - 397.

    More information

  506. Authors: P. Pichler, E366; Werner Jüngling, E360; Siegfried Selberherr, E360; E. Guerrero; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
    "Simulation of Critical IC-Fabrication Steps";
    IEEE Transactions on Electron Devices, 32 (1985), 10; 1940 - 1953.

    More information

  507. Authors: P. Pichler, E366; Werner Jüngling, E360; Siegfried Selberherr, E360; Hans Pötzl, E366

    P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
    "Two-Dimensional Coupled Diffusion Modeling";
    Physica B: Condensed Matter, 129 (1985), 1-3; 187 - 191.

    More information

  508. Authors: Richard Plasun, E360; Michael Stockinger, E360; Siegfried Selberherr, E360

    R. Plasun, M. Stockinger, S. Selberherr:
    "Integrated Optimization Capabilities in the VISTA Technology CAD Framework";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; 1244 - 1251.

    More information

  509. Authors: G. Pobegen; T. Aichinger; Tibor Grasser, E360; M. Nelhiebel

    G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
    "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
    Microelectronics Reliability, 51 (2011), 1530 - 1534.

    More information

  510. Authors: Gregor Pobegen; T. Aichinger; Alberto Salinaro; Tibor Grasser, E360

    G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
    "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
    Materials Science Forum, 778-780 (2014), 959 - 962.

    More information

  511. Authors: Gregor Pobegen; Tibor Grasser, E360

    G. Pobegen, T. Grasser:
    "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
    Materials Science Forum, 740-742 (2013), 757 - 760.

    More information

  512. Authors: Gregor Pobegen; Tibor Grasser, E360

    G. Pobegen, T. Grasser:
    "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
    IEEE Transactions on Electron Devices, 60 (2013), 7; 2148 - 2155.

    More information

  513. Authors: Gregor Pobegen; Michael Nelhiebel; Stefano de Filippis; Tibor Grasser, E360

    G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
    "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
    IEEE Transactions on Device and Materials Reliability, 99 (2013), PP; 1 - 8.

    More information

  514. Authors: Gregor Pobegen; S. E. Tyaginov, E360; Michael Nelhiebel; Tibor Grasser, E360

    G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
    "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
    IEEE Electron Device Letters, 34 (2013), 8; 939 - 941.

    More information

  515. Authors: Christian Poschalko, E360; Siegfried Selberherr, E360

    C. Poschalko, S. Selberherr:
    "Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads";
    IEEE Transactions on Electromagnetic Compatibility, 51 (2009), 1; 18 - 24.

    More information

  516. Authors: Mahdi Pourfath, E360; Andreas Gehring, E360; Stephan Enzo Ungersböck, E360; Hans Kosina, E360; Siegfried Selberherr, E360; Byoung-Ho Cheong; Wanjun Park

    M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park:
    "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors";
    Journal of Applied Physics, 97 (2005), 10; 106103-1 - 106103-3.

    More information

  517. Authors: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Computational Study of Carbon-Based Electronics";
    Journal of Computational Electronics, 8 (2009), 3-4; 427 - 440.

    More information

  518. Authors: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets";
    Journal of Computational and Theoretical Nanoscience, 5 (2008), 6; 1128 - 1137.

    More information

  519. Authors: Mahdi Pourfath, E360; Hans Kosina, E360

    M. Pourfath, H. Kosina:
    "The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors";
    Nanotechnology, 18 (2007), 42; 424036 - 424041.

    More information

  520. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
    Journal of Computational Electronics, 5 (2006), 2-3; 155 - 159.

    More information

  521. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Dissipative Transport in CNTFETs";
    Journal of Computational Electronics, 6 (2007), 1-3; 321 - 324.

    More information

  522. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Geometry Optimization for Carbon Nanotube Transistors";
    Solid-State Electronics, 51 (2007), 11-12; 1565 - 1571.

    More information

  523. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Numerical Study of Quantum Transport in Carbon Nanotube Transistors";
    Mathematics and Computers in Simulation, 79 (2008), 4; 1051 - 1059.

    More information

  524. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Rigorous Modeling of Carbon Nanotube Transistors";
    Journal of Physics: Conference Series, 38 (2006), 29 - 32.

    More information

  525. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
    Journal of Physics: Conference Series, 109 (2008), 012029; 1 - 5.

    More information

  526. Authors: Mahdi Pourfath, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, H. Kosina, S. Selberherr:
    "Tunneling CNTFETs";
    Journal of Computational Electronics, 6 (2007), 1-3; 243 - 246.

    More information

  527. Authors: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Byoung-Ho Cheong; W Park; Hans Kosina, E360; Siegfried Selberherr, E360

    M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
    "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Microelectronic Engineering, 81 (2005), 2-4; 428 - 433.

    More information

  528. Authors: Mahdi Pourfath, E360; Stephan Enzo Ungersböck, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360; W Park; Byoung-Ho Cheong

    M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong:
    "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
    Journal of Computational Electronics, 4 (2005), 1-2; 75 - 78.

    More information

  529. Authors: Helmut Puchner, E360; R. Castagnetti; Wolfgang Pyka, E360

    H. Puchner, R. Castagnetti, W. Pyka:
    "Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions";
    Microelectronic Engineering, 53 (2000), 429 - 432.

  530. Authors: Helmut Puchner, E360; Siegfried Selberherr, E360

    H. Puchner, S. Selberherr:
    "An Advanced Model for Dopant Diffusion in Polysilicon";
    IEEE Transactions on Electron Devices, 42 (1995), 10; 1750 - 1755.

    More information

  531. Authors: Katja Puschkarsky; Tibor Grasser, E360; T. Aichinger; W. Gustin; H. Reisinger

    K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
    "Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
    IEEE Transactions on Electron Devices (invited), 66 (2019), 11; 4604 - 4616.

    More information

  532. Authors: Katja Puschkarsky; H. Reisinger; T. Aichinger; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
    "Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation";
    IEEE Transactions on Device and Materials Reliability, 18 (2018), 2; 144 - 153.

    More information

  533. Authors: Katja Puschkarsky; H. Reisinger; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser:
    "Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation";
    IEEE Transactions on Electron Devices, 65 (2018), 11; 4764 - 4771.

    More information

  534. Authors: Katja Puschkarsky; H. Reisinger; Gunnar Andreas Rott; C Schluender; W. Gustin; Tibor Grasser, E360

    K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser:
    "An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps";
    IEEE Transactions on Electron Devices, 66 (2019), 11; 4623 - 4630.

    More information

  535. Authors: Wolfgang Pyka, E360; Peter Fleischmann, E360; Bernhard Haindl, E384; Siegfried Selberherr, E360

    W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
    "Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18 (1999), 12; 1741 - 1749.

    More information

  536. Authors: Wolfgang Pyka, E360; Heinrich Kirchauer, E360; Siegfried Selberherr, E360

    W. Pyka, H. Kirchauer, S. Selberherr:
    "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
    Microelectronic Engineering, 53 (2000), 1-4; 449 - 452.

    More information

  537. Authors: Wolfgang Pyka, E360; Rui Martins, E360; Siegfried Selberherr, E360

    W. Pyka, R. Martins, S. Selberherr:
    "Optimized Algorithms for Three-Dimensional Cellular Topography Simulation";
    IEEE Journal of Technology Computer Aided Design, 1 (2000), 20; 1 - 36.

    More information

  538. Authors: Rüdiger Quay, E360; K. Hess; R. Reuter; M. Schlechtweg; T. Grave; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
    "Nonlinear Electronic Transport and Device Performance of HEMTs";
    IEEE Transactions on Electron Devices, 48 (2001), 2; 210 - 217.

    More information

  539. Authors: Rüdiger Quay, E360; C. Moglestue; Vassil Palankovski, E360; Siegfried Selberherr, E360

    R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
    "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
    Materials Science in Semiconductor Processing, 3 (2000), 1-2; 149 - 155.

    More information

  540. Authors: Michael Quell, E360; Georgios Diamantopoulos, E360; Andreas Hössinger; Josef Weinbub, E360

    M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
    "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
    Journal of Computational and Applied Mathematics, 392 (2021), 113488-1 - 113488-15.

    More information

  541. Authors: Michael Quell, E360; V Suvorov; Andreas Hössinger; Josef Weinbub, E360

    M. Quell, V. Suvorov, A. Hössinger, J. Weinbub:
    "Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD";
    IEEE Transactions on Electron Devices, 68 (2021), 11; 5430 - 5437.

    More information

  542. Authors: H. Rabiee Golgir; R. Faez; M. Pazoki; Hossein Karamitaheri, E360; R. Sarvari

    H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari:
    "Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity";
    Journal of Applied Physics, 110 (2011), 6; 064320-1 - 064320-6.

    More information

  543. Authors: Mustafa Radi, E360; Ernst Leitner, E360; Siegfried Selberherr, E360

    M. Radi, E. Leitner, S. Selberherr:
    "AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
    IEEE Journal of Technology Computer Aided Design, 1 (1999), 17; 1 - 72.

    More information

  544. Authors: K. Raleva; Dragica Vasileska; S.M. Goodnick; Mihail Nedjalkov, E360

    K. Raleva, D. Vasileska, S.M. Goodnick, M. Nedjalkov:
    "Modeling Thermal Effects in Nanodevices";
    IEEE Transactions on Electron Devices, 55 (2008), 6; 1306 - 1316.

  545. Authors: Gopal Raut; Ambika Shah, E360; Vishal Sharma; Gunjan Rajput; Santosh Kumar Vishvakarma

    G. Raut, A. Shah, V. Sharma, G. Rajput, S. Vishvakarma:
    "A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture";
    Circuits Systems and Signal Processing, 39 (2020), 4681 - 4694.

    More information

  546. Authors: Manfred Reiche; M Kittler; E Pippel; Hans Kosina, E360; Alois Lugstein, E362; H Uebensee

    M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee:
    "Electronic Properties of Dislocations";
    Solid State Phenomena, 242 (2016), 141 - 146.

    More information

  547. Authors: Manfred Reiche; M Kittler; E Pippel; H Uebensee; Hans Kosina, E360; Alexander Grill, E360; Zlatan Stanojevic; Oskar Baumgartner

    M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner:
    "Impact of Defect-Induced Strain on Device Properties";
    Advanced Engineering Materials, 18 (2016), 12; 1 - 4.

    More information

  548. Authors: Peter Reininger, E362; Benedikt Schwarz, E362; Hermann Detz, E362; Donald MacFarland, E362; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "Diagonal-Transition Quantum Cascade Detector";
    Applied Physics Letters, 105 (2014), 091108; 1 - 4.

    More information

  549. Authors: H. Reisinger; R. P. Vollertsen; Paul-Jürgen Wagner, E360; T. Huttner; A. Martin; S. Aresu; W. Gustin; Tibor Grasser, E360; C. Schlünder

    H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
    "A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides";
    IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; 106 - 114.

    More information

  550. Authors: Tobias Reiter, E360; Xaver Klemenschits, E360; Lado Filipovic, E360

    T. Reiter, X. Klemenschits, L. Filipovic:
    "Impact of Plasma Induced Damage on the Fabrication of 3D NAND Flash Memory";
    Solid-State Electronics (invited), 192 (2022), 108261-1 - 108261-9.

    More information

  551. Authors: Gerald Rescher; Gregor Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
    Materials Science Forum, 924 (2018), 671 - 675.

    More information

  552. Authors: Gerald Rescher; Gregor Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
    Materials Science Forum, 897 (2017), 143 - 146.

    More information

  553. Authors: Gerald Rescher; Gregor Pobegen; T. Aichinger; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
    "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique";
    IEEE Transactions on Electron Devices, 25 (2018), 4; 1419 - 1426.

    More information

  554. Authors: Gerald Rescher; Gregor Pobegen; Tibor Grasser, E360

    G. Rescher, G. Pobegen, T. Grasser:
    "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
    Materials Science Forum, 858 (2016), 481 - 484.

    More information

  555. Authors: Ch. Ringhofer; Mihail Nedjalkov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
    "Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
    SIAM Journal on Applied Mathematics, 64 (2004), 6; 1933 - 1953.

    More information

  556. Authors: Ch. Ringhofer; Siegfried Selberherr, E360

    Ch. Ringhofer, S. Selberherr:
    "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
    MRC Technical Summary Report, 2513 (1983), 1 - 49.

  557. Authors: Rodrigo Rodriguez-Torres, E360; Edmundo Gutierrez; Robert Klima, E360; Siegfried Selberherr, E360

    R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
    "Analysis of Split-Drain MAGFETs";
    IEEE Transactions on Electron Devices, 51 (2004), 12; 2237 - 2245.

    More information

  558. Authors: Gunnar Andreas Rott; K. Rott; H. Reisinger; W. Gustin; Tibor Grasser, E360

    G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
    "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
    Microelectronics Reliability, 54 (2014), 9-10; 2310 - 2314.

    More information

  559. Authors: K. Rott; H. Reisinger; S. Aresu; C. Schlünder; K. Kölpin; W. Gustin; Tibor Grasser, E360

    K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser:
    "New Insights on the PBTI Phenomena in SiON pMOSFETs";
    Microelectronics Reliability, 52 (2012), 9-10; 1891 - 1894.

    More information

  560. Authors: Bernhard Ruch; Markus Jech, E360; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, M. Jech, G. Pobegen, T. Grasser:
    "Applicability of Shockley-Read-Hall Theory for Interface States";
    IEEE Transactions on Electron Devices, 68 (2021), 4; 2092 - 2097.

    More information

  561. Authors: Bernhard Ruch; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, G. Pobegen, T. Grasser:
    "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping";
    IEEE Transactions on Electron Devices, 67 (2020), 10; 4092 - 4098.

    More information

  562. Authors: Bernhard Ruch; Gregor Pobegen; Tibor Grasser, E360

    B. Ruch, G. Pobegen, T. Grasser:
    "Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs";
    IEEE Transactions on Electron Devices, 68 (2021), 4; 1804 - 1809.

    More information

  563. Authors: Florian Rudolf, E360; Karl Rupp, E360; Josef Weinbub, E360; Andreas Morhammer, E360; Siegfried Selberherr, E360

    F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr:
    "Transformation Invariant Local Element Size Specification";
    Applied Mathematics and Computation, 267 (2015), 195 - 206.

    More information

  564. Authors: Florian Rudolf, E360; Josef Weinbub, E360; Karl Rupp, E360; Siegfried Selberherr, E360

    F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr:
    "The Meshing Framework ViennaMesh for Finite Element Applications";
    Journal of Computational and Applied Mathematics, 270 (2014), 166 - 177.

    More information

  565. Author: Karl Rupp, E360

    K. Rupp:
    "High-Level Manipulation of OpenCL-Based Subvectors and Submatrices";
    Procedia Computer Science, 9 (2012), 1857 - 1866.

    More information

  566. Authors: Karl Rupp, E360; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, A. Jüngel, T. Grasser:
    "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
    Journal of Computational Physics, 229 (2010), 8750 - 8765.

    More information

  567. Authors: Karl Rupp, E360; C. Jungemann; Sung-Min Hong; Markus Bina; Tibor Grasser, E360; Ansgar Jüngel, E101-01

    K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
    "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
    Journal of Computational Electronics, 15 (2016), 3; 939 - 958.

    More information

  568. Authors: Karl Rupp, E360; Siegfried Selberherr, E360

    K. Rupp, S. Selberherr:
    "The Economic Limit to Moore's Law";
    IEEE Transactions on Semiconductor Manufacturing, 24 (2011), 1; 1 - 4.

    More information

  569. Authors: Karl Rupp; Siegfried Selberherr, E360

    K. Rupp, S. Selberherr:
    "The Economic Limit to Moore´s Law";
    Proceedings of the IEEE, 98 (2010), 3; 351 - 353.

    More information

  570. Authors: Karl Rupp, E360; Philippe Tillet; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
    "Achieving Portable High Performance for Iterative Solvers on Accelerators";
    Proceedings in Applied Mathematics and Mechanics, 14 (2014), 1; 963 - 964.

    More information

  571. Authors: Karl Rupp, E360; Philippe Tillet; Florian Rudolf, E360; Josef Weinbub, E360; Andreas Morhammer, E360; Tibor Grasser, E360; Ansgar Jüngel, E101-01; Siegfried Selberherr, E360

    K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
    "ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
    SIAM Journal on Scientific Computing, 38 (2016), 5; S412 - S439.

    More information

  572. Authors: Karl Rupp, E360; Josef Weinbub, E360; Ansgar Jüngel, E101-01; Tibor Grasser, E360

    K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
    "Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
    ACM Transactions on Mathematical Software, 43 (2016), 2; 11:1 - 11:27.

    More information

  573. Authors: J. T. Ryan; P. M. Lenahan; Tibor Grasser, E360; H. Enichlmair

    J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
    "Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance";
    Applied Physics Letters, 96 (2010), 22; 223509-1 - 223509-3.

    More information

  574. Authors: Gerhard Rzepa, E360; J. Franco; Barry J. O´Sullivan; A Subirats; Marko Simicic; Geert Hellings; P. Weckx; Markus Jech, E360; Theresia Knobloch, E360; Michael Waltl, E360; Philippe J. Roussel; D Linten; Ben Kaczer; Tibor Grasser, E360

    G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
    "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
    Microelectronics Reliability (invited), 85 (2018), 1; 49 - 65.

    More information

  575. Authors: Rainer Sabelka, E360; Siegfried Selberherr, E360

    R. Sabelka, S. Selberherr:
    "A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures";
    Microelectronics Journal, 32 (2001), 2; 163 - 171.

    More information

  576. Authors: Toufik Sadi; Christina Medina-Bailon; Mihail Nedjalkov, E360; Jaehyun Lee; Oves Badami; Salim Berrada; Hamilton Carillo-Nunez; Vihar Georgiev; Siegfried Selberherr, E360; Asen Asenov

    T. Sadi, C. Medina-Bailon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
    "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors";
    Materials, 12 (2019), 1; 124-1 - 124-11.

    More information

  577. Authors: Fatemeh Safari; Mahdi Moradinasab; M. Fathipour; Hans Kosina, E360

    F. Safari, M. Moradinasab, M. Fathipour, H. Kosina:
    "Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study";
    Applied Surface Science, 464 (2019), 153 - 161.

    More information

  578. Authors: Ahmed Saleh; Hajdin Ceric, E360; Houman Zahedmanesh

    A. Saleh, H. Ceric, H. Zahedmanesh:
    "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model";
    Journal of Applied Physics, 129 (2021), 12; 125102-1 - 125102-17.

    More information

  579. Authors: Prachi Sanvale; Neha Gupta; Vaibhav Neema; Ambika Shah, E360; Santosh Kumar Vishvakarma

    P. Sanvale, N. Gupta, V. Neema, A. Shah, S. Vishvakarma:
    "An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ";
    Microelectronics Journal, 92 (2019), 104611.

    More information

  580. Authors: Franz Schanovsky, E360; Oskar Baumgartner, E360; Viktor Sverdlov, E360; Tibor Grasser, E360

    F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
    "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
    Journal of Computational Electronics, 11 (2012), 3; 218 - 224.

    More information

  581. Authors: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT";
    Journal of Computational Electronics (invited), 9 (2010), 3-4; 135 - 140.

    More information

  582. Authors: Franz Schanovsky, E360; Wolfgang Gös, E360; Tibor Grasser, E360

    F. Schanovsky, W. Gös, T. Grasser:
    "Multiphonon Hole Trapping from First Principles";
    Journal of Vacuum Science & Technology B, 29 (2011), 1; 01A201-1 - 01A201-5.

    More information

  583. Authors: Christian Schleich, E360; Dominic Waldhör, E360; Katja Anna Waschneck; Maximilian Feil; H. Reisinger; Tibor Grasser, E360; Michael Waltl, E360

    C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
    "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
    IEEE Transactions on Electron Devices, 68 (2021), 8; 4016 - 4021.

    More information

  584. Authors: Gerhard Schrom, E360; De Vivek; Siegfried Selberherr, E360

    G. Schrom, De Vivek, S. Selberherr:
    "VLSI Performance Metric Based on Minimum TCAD Simulations";
    IEEE Journal of Technology Computer Aided Design, 1 (1998), 12; 1 - 29.

    More information

  585. Authors: Gerhard Schrom, E360; Christoph Pichler, E360; Thomas Simlinger, E360; Siegfried Selberherr, E360

    G. Schrom, C. Pichler, T. Simlinger, S. Selberherr:
    "On the Lower Bounds of CMOS Supply Voltage";
    Solid-State Electronics, 39 (1996), 4; 425 - 430.

    More information

  586. Authors: Gerhard Schrom, E360; Andreas Stach, E360; Siegfried Selberherr, E360

    G. Schrom, A. Stach, S. Selberherr:
    "An Interpolation Based MOSFET Model for Low-Voltage Applications";
    Microelectronics Journal, 29 (1998), 8; 529 - 534.

    More information

  587. Authors: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "A Two-Dimensional Model of the Avalanche Effect in MOS Transistors";
    Solid-State Electronics, 25 (1982), 3; 177 - 183.

    More information

  588. Authors: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Analysis of Breakdown Phenomena in MOSFET's";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1 (1982), 2; 77 - 85.

    More information

  589. Authors: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Modeling MOS-Transistors in the Avalanche Breakdown Regime";
    Transactions on Computer Simulation (invited), 1 (1984), 1; 1 - 14.

  590. Authors: A. Schütz, E366; Siegfried Selberherr, E360; Hans Pötzl, E366

    A. Schütz, S. Selberherr, H. Pötzl:
    "Temperature Distribution and Power Dissipation in MOSFETs";
    Solid-State Electronics, 27 (1984), 4; 394 - 395.

    More information

  591. Authors: Philipp Schwaha, E360; Rene Heinzl, E360; Franz Stimpfl, E360; Siegfried Selberherr, E360

    P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
    "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
    International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; 539 - 549.

    More information

  592. Authors: P. Schwaha; D. Querlioz; P. Dollfus; J. Saint-Martin; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr:
    "Decoherence Effects in the Wigner Function Formalism";
    Journal of Computational Electronics, 12 (2013), 3; 388 - 396.

    More information

  593. Authors: Benedikt Schwarz, E362; Peter Reininger, E362; Hermann Detz, E362; Tobias Zederbauer, E362; Aaron Maxwell Andrews, E362; Stefan Kalchmair, E362; Werner Schrenk, E362; Oskar Baumgartner, E360; Hans Kosina, E360; Gottfried Strasser, E362

    B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
    "A bi-functional quantum cascade device for same-frequency lasing and detection";
    Applied Physics Letters, 101 (2012), 1911091 - 1911094.

    More information

  594. Authors: Nima Sefidmooye Azar; Mahdi Pourfath, E360

    N. Sefidmooye Azar, M. Pourfath:
    "A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites";
    IEEE Transactions on Electron Devices, 62 (2015), 5; 1584 - 1589.

    More information

  595. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Computer für Wissenschaft und Forschung";
    Österreichische Hochschulzeitung (invited), 5 (1988), 9 - 10.

  596. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik";
    Österreichische Hochschulzeitung (invited), 7 (1988), 25.

  597. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Device Modeling and Physics";
    Physica Scripta (invited), T35 (1991), 293 - 298.

    More information

  598. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren";
    E&I Elektrotechnik und Informationstechnik (invited), 115 (1998), 7/8; 344 - 348.

    More information

  599. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "MOS Device Modeling at 77K";
    IEEE Transactions on Electron Devices, 36 (1989), 8; 1464 - 1474.

    More information

  600. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Process and Device Modeling for VLSI";
    Microelectronics Reliability (invited), 24 (1984), 2; 225 - 257.

    More information

  601. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Process and Device Modeling for VLSI";
    Microelectronics Journal, 16 (1985), 6; 56 - 57.

    More information

  602. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Process Modeling";
    Microelectronic Engineering, 9 (1989), 1-4; 605 - 610.

    More information

  603. Author: Siegfried Selberherr, E360

    S. Selberherr:
    "Technology Computer-Aided Design";
    South African Journal of Physics (invited), 16 (1993), 1/2; 1 - 5.

  604. Authors: Siegfried Selberherr, E360; E. Guerrero

    S. Selberherr, E. Guerrero:
    "Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals";
    Solid-State Electronics, 24 (1981), 6; 591 - 593.

    More information

  605. Authors: Siegfried Selberherr, E360; W. Hänsch; M. Seavey; Jan Slotboom

    S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
    "The Evolution of the MINIMOS Mobility Model";
    Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; 161 - 172.

  606. Authors: Siegfried Selberherr, E360; W. Hänsch; M. Seavey; Jan Slotboom

    S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
    "The Evolution of the MINIMOS Mobility Model";
    Solid-State Electronics, 33 (1990), 11; 1425 - 1436.

    More information

  607. Authors: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Three Dimensional Process and Device Modeling";
    Microelectronics Journal (invited), 20 (1989), 1-2; 113 - 127.

    More information

  608. Authors: Siegfried Selberherr, E360; Erasmus Langer, E360

    S. Selberherr, E. Langer:
    "Three Dimensional Process and Device Modeling";
    Microelectronics Reliability, 30 (1990), 3; 624.

    More information

  609. Authors: Siegfried Selberherr, E360; Ch. Ringhofer

    S. Selberherr, Ch. Ringhofer:
    "Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3 (1984), 1; 52 - 64.

    More information

  610. Authors: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Investigation of Parameter Sensitivity of Short Channel MOSFETs";
    Solid-State Electronics, 25 (1982), 2; 85 - 90.

    More information

  611. Authors: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
    IEEE Transactions on Electron Devices, 27 (1980), 8; 1540 - 1550.

    More information

  612. Authors: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
    IEEE Journal of Solid-State Circuits, 15 (1980), 4; 605 - 615.

    More information

  613. Authors: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)";
    Elektronikschau, 9 (1980), 18 - 23.

  614. Authors: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)";
    Elektronikschau, 10 (1980), 54 - 58.

  615. Authors: Siegfried Selberherr, E360; A. Schütz, E366; Hans Pötzl, E366

    S. Selberherr, A. Schütz, H. Pötzl:
    "Two-Dimensional MOS Transistor Modelling";
    European Electronics (invited), 1 (1981), 3; 20 - 30.

  616. Authors: Siegfried Selberherr, E360; Martin Stiftinger, E360; Otto Heinreichsberger, E360; K. Traar

    S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar:
    "On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers";
    Computer Physics Communications, 67 (1991), 1; 145 - 156.

    More information

  617. Authors: Siegfried Selberherr, E360; Viktor Sverdlov, E360

    S. Selberherr, V. Sverdlov:
    "About electron transport and spin control in semiconductor devices";
    Solid-State Electronics (invited), 197 (2022), 108443.

    More information

  618. Authors: J. M. Sellier; S. M. Amoroso; Mihail Nedjalkov, E360; Siegfried Selberherr, E360; A Asenov; Ivan Dimov

    J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov:
    "Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches";
    Physica A: Statistical Mechanics and its Applications, 398 (2014), 194 - 198.

    More information

  619. Authors: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov

    J. M. Sellier, M. Nedjalkov, I. Dimov:
    "An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism";
    Physics Reports, 577 (2015), 1 - 34.

    More information

  620. Authors: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "A Benchmark Study of the Wigner Monte Carlo Method";
    Monte Carlo Methods and Applications, 20 (2014), 1; 43 - 51.

    More information

  621. Authors: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "A Comparison of Approaches for the Solution of the Wigner Equation";
    Mathematics and Computers in Simulation, 107 (2015), 108 - 119.

    More information

  622. Authors: J. M. Sellier; Mihail Nedjalkov, E360; Ivan Dimov; Siegfried Selberherr, E360

    J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
    "Decoherence and Time Reversibility: The Role of Randomness at Interfaces";
    Journal of Applied Physics, 114 (2013), 17; 174902-1 - 174902-7.

    More information

  623. Authors: Ambika Shah; Neha Gupta; Michael Waltl, E360

    A. Shah, N. Gupta, M. Waltl:
    "High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs";
    Analog Integrated Circuits and Signal Processing, 109 (2021), 657 - 671.

    More information

  624. Authors: Ambika Shah, E360; Daniele Rossi; Vishal Sharma; Santosh Kumar Vishvakarma; Michael Waltl, E360

    A. Shah, D. Rossi, V. Sharma, S. Vishvakarma, M. Waltl:
    "Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit";
    Microelectronics Reliability, 107 (2020), 113617.

    More information

  625. Authors: Ambika Shah, E360; Michael Waltl, E360

    A. Shah, M. Waltl:
    "Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM";
    Electronics, 9 (2020), 2; 256-1 - 256-12.

    More information

  626. Authors: Ambika Shah, E360; Michael Waltl, E360

    A. Shah, M. Waltl:
    "Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits";
    International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34 (2021), 3; e2854-1 - e2854-13.

    More information

  627. Authors: Prateek Sharma, E360; S. E. Tyaginov, E360; Markus Jech, E360; Yannick Wimmer, E360; Florian Rudolf, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
    Solid-State Electronics, 115 (2016), Part B; 185 - 191.

    More information

  628. Authors: Prateek Sharma, E360; S. E. Tyaginov, E360; Stewart E. Rauch; J. Franco; Alexander Makarov, E360; M. I. Vexler; Ben Kaczer; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser:
    "Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach";
    IEEE Electron Device Letters, 38 (2017), 2; 160 - 163.

    More information

  629. Authors: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; Karl Rupp, E360; Markus Bina, E360; H. Enichlmair; J.M. Park; R. Minixhofer; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
    "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
    IEEE Transactions on Electron Devices, 62 (2015), 6; 1811 - 1818.

    More information

  630. Authors: Prateek Sharma, E360; S. E. Tyaginov, E360; Yannick Wimmer, E360; Florian Rudolf, E360; Karl Rupp, E360; H. Enichlmair; J.M. Park; Hajdin Ceric, E360; Tibor Grasser, E360

    P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
    Microelectronics Reliability, 55 (2015), 9-10; 1427 - 1432.

    More information

  631. Authors: Alireza Sheikholeslami, E360; Clemens Heitzinger, E360; Helmut Puchner, E360; Fuad Badrieh; Siegfried Selberherr, E360

    A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr:
    "Simulation of Void Formation in Interconnect Lines";
    Proceedings of SPIE, 5117 (2003), 445 - 452.

    More information

  632. Authors: Alireza Sheikholeslami, E360; Farnaz Parhami; H Puchner; Siegfried Selberherr, E360

    A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
    "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
    Journal of Physics: Conference Series, 61 (2007), 1051 - 1055.

    More information

  633. Authors: Thomas Simlinger, E360; Helmut Brech; T. Grave; Siegfried Selberherr, E360

    T. Simlinger, H. Brech, T. Grave, S. Selberherr:
    "Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
    IEEE Transactions on Electron Devices, 44 (1997), 5; 700 - 707.

    More information

  634. Authors: Vito Simonka, E360; Andreas Hössinger; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide";
    IEEE Transactions on Electron Devices, 65 (2018), 2; 674 - 679.

    More information

  635. Authors: Vito Simonka, E360; Andreas Hössinger; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
    Journal of Applied Physics, 120 (2016), 13; 135705-1 - 135705-8.

    More information

  636. Authors: Vito Simonka, E360; Andreas Hössinger; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
    Materials Science Forum, 924 (2018), 192 - 195.

    More information

  637. Authors: Vito Simonka, E360; Andreas Hössinger; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
    "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation";
    Journal of Physical Chemistry A, 121 (2017), 46; 8791 - 8798.

    More information

  638. Authors: Vito Simonka, E360; Georg Nawratil, E104-03; Andreas Hössinger; Josef Weinbub, E360; Siegfried Selberherr, E360

    V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
    "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
    Solid-State Electronics (invited), 128 (2017), 2; 135 - 140.

    More information

  639. Authors: Vito Simonka, E360; Alexander Toifl, E360; Andreas Hössinger; Siegfried Selberherr, E360; Josef Weinbub, E360

    V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
    "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
    Journal of Applied Physics, 123 (2018), 23; 235701-1 - 235701-7.

    More information

  640. Authors: Anderson P. Singulani, E360; Hajdin Ceric, E360; Siegfried Selberherr, E360

    A. P. Singulani, H. Ceric, S. Selberherr:
    "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
    Microelectronics Reliability, 53 (2013), 1602 - 1605.

    More information

  641. Authors: Sergey Smirnov, E360; Hans Kosina, E360

    S. Smirnov, H. Kosina:
    "Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates";
    Solid-State Electronics (invited), 48 (2004), 1325 - 1335.

    More information

  642. Authors: Sergey Smirnov, E360; Hans Kosina, E360; Mihail Nedjalkov, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
    "Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
    Journal of Applied Physics, 94 (2003), 9; 5791 - 5799.

    More information

  643. Authors: Sergey Smirnov, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    S. Smirnov, H. Kosina, S. Selberherr:
    "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
    IEICE Transactions on Electronics, E86-C (2003), 3; 350 - 356.

  644. Authors: Sina Soleimani Kahnoj; S. B. Touski; Mahdi Pourfath, E360

    S. Soleimani Kahnoj, S. Touski, M. Pourfath:
    "The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons";
    Applied Physics Letters, 105 (2014), 10; 1035021 - 1035024.

    More information

  645. Authors: Xiaoxue Song; Fei Hui; Theresia Knobloch, E360; Bingru Wang; Zhongchao Fan; Tibor Grasser, E360; Xu Jing; Yuanyuan Shi; Mario Lanza

    X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza:
    "Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide";
    Applied Physics Letters, 111 (2017), 8; 083107-1 - 083107-4.

    More information

  646. Authors: Gerhard Span; Martin Wagner, E360; Tibor Grasser, E360; Lennart Holmgren

    G. Span, M. Wagner, T. Grasser, L. Holmgren:
    "Miniaturized TEG with Thermal Generation of Free Carriers";
    Physica Status Solidi - Rapid Research Letters, 1 (2007), 6; 241 - 243.

    More information

  647. Authors: Michael Spevak, E360; Tibor Grasser, E360

    M. Spevak, T. Grasser:
    "Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26 (2007), 8; 1408 - 1416.

  648. Authors: Bernhard Stampfer, E360; F. Schanovski; Tibor Grasser, E360; Michael Waltl, E360

    B. Stampfer, F. Schanovski, T. Grasser, M. Waltl:
    "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors";
    Micromachines (invited), 11 (2020), 4; 446-1 - 446-11.

    More information

  649. Authors: Bernhard Stampfer, E360; Marko Simicic; P. Weckx; Arash Abbasi, E360; Ben Kaczer; Tibor Grasser, E360; Michael Waltl, E360

    B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
    "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
    IEEE Transactions on Device and Materials Reliability (invited), 20 (2020), 2; 251 - 257.

    More information

  650. Authors: Bernhard Stampfer, E360; Feng Zhang; Yury Illarionov, E360; Theresia Knobloch, E360; Peng Wu; Michael Waltl, E360; Alexander Grill, E360; J Appenzeller; Tibor Grasser, E360

    B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
    "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
    ACS Nano, 12 (2018), 6; 5368 - 5375.

    More information

  651. Authors: Zlatan Stanojevic; Oskar Baumgartner, E360; Lidija Filipovic, E360; Hans Kosina, E360; Markus Karner, E360; Christian Kernstock, E360; Philipp Prause, E360

    Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause:
    "Consistent Low-Field Mobility Modeling for Advanced MOS Devices";
    Solid-State Electronics, 112 (2015), 37 - 45.

    More information

  652. Authors: Zlatan Stanojevic; Viktor Sverdlov, E360; Oskar Baumgartner, E360; Hans Kosina, E360

    Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
    "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
    Solid-State Electronics, 70 (2012), 73 - 80.

    More information

  653. Authors: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions";
    Ferroelectrics, 427 (2012), 1; 78 - 83.

    More information

  654. Authors: Alexander Starkov; Oleg Pakhomov; Ivan Starkov, E360

    A. Starkov, O. Pakhomov, I. Starkov:
    "Solid-State Cooler: New Opportunities";
    Ferroelectrics, 430 (2012), 1; 108 - 114.

    More information

  655. Authors: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
    Ferroelectrics, 442 (2013), 1; 10 - 17.

    More information

  656. Authors: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model";
    JETP Letters, 91 (2010), 10; 507 - 511.

  657. Authors: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field";
    Technical Physics Letters, 79 (2011), 12; 1139 - 1141.

    More information

  658. Authors: A. S. Starkov; O. V. Pakhomov; Ivan Starkov, E360

    A. S. Starkov, O. V. Pakhomov, I. Starkov:
    "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them";
    Journal of Experimental and Theoretical Physics, 116 (2013), 6; 987 - 994.

    More information

  659. Authors: A. S. Starkov; Ivan Starkov, E360

    A. S. Starkov, I. Starkov:
    "Domain Wall Motion for Slowly Varying Electric Field";
    Ferroelectrics, 442 (2013), 1; 1 - 9.

    More information

  660. Authors: Ivan Starkov, E360; H. Enichlmair

    I. Starkov, H. Enichlmair:
    "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs";
    Journal of Vacuum Science & Technology B, 31 (2013), 1; 01A118-1 - 01A118-7.

    More information

  661. Authors: Ivan Starkov, E360; S. E. Tyaginov, E360; H. Enichlmair; Johann Cervenka, E360; C. Jungemann; Sara Carniello; Jong Mun Park, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
    "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
    Journal of Vacuum Science & Technology B, 29 (2011), 01AB09-1 - 01AB09-8.

    More information

  662. Authors: Ivan Starkov, E360; S. E. Tyaginov, E360; H. Enichlmair; Jong Mun Park, E360; Hajdin Ceric, E360; Tibor Grasser, E360

    I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
    "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
    Solid State Phenomena, 178-179 (2011), 267 - 272.

    More information

  663. Authors: James H. Stathis; Souvik Mahapatra; Tibor Grasser, E360

    J. Stathis, S. Mahapatra, T. Grasser:
    "Controversial Issues in Negative Bias Temperature Instability";
    Microelectronics Reliability, 81 (2018), 244 - 251.

    More information

  664. Authors: Hannes Stippel, E360; Ernst Leitner, E360; Christoph Pichler, E360; Helmut Puchner, E360; Ernst Strasser, E360; Siegfried Selberherr, E360

    H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr:
    "Process Simulation for the 1990s";
    Microelectronics Journal (invited), 26 (1995), 2-3; 203 - 215.

    More information

  665. Authors: Hannes Stippel, E360; Siegfried Selberherr, E360

    H. Stippel, S. Selberherr:
    "Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree";
    IEICE Transactions on Electronics, E77-C (1994), 2; 118 - 123.

  666. Authors: Michael Stockinger, E360; Andreas Wild; Siegfried Selberherr, E360

    M. Stockinger, A. Wild, S. Selberherr:
    "Drive Performance of an Asymmetric MOSFET Structure: The Peak Device";
    Microelectronics Journal, 30 (1999), 3; 229 - 233.

    More information

  667. Authors: Roberta Stradiotto, KAI GmbH; Gregor Pobegen; C Ostermaier; Tibor Grasser, E360

    R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
    "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces";
    Solid-State Electronics, 125 (2016), 142 - 153.

    More information

  668. Authors: Roberta Stradiotto, KAI GmbH; Gregor Pobegen; C Ostermaier; Michael Waltl, E360; Alexander Grill, E360; Tibor Grasser, E360

    R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
    "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
    IEEE Transactions on Electron Devices, 64 (2017), 3; 1045 - 1052.

    More information

  669. Authors: Jack Strand; Kaviani Moloud; Al-Moatasem El-Sayed, E360; V. Afanas´Ev; A. L. Shluger

    J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger:
    "Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges";
    Journal of Physics: Condensed Matter, 30 (2018), 23; 233001.

    More information

  670. Authors: Ernst Strasser, E360; Gerhard Schrom, E360; Karl Wimmer, E360; Siegfried Selberherr, E360

    E. Strasser, G. Schrom, K. Wimmer, S. Selberherr:
    "Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations";
    IEICE Transactions on Electronics, E77-C (1994), 2; 92 - 97.

  671. Authors: Ernst Strasser, E360; Siegfried Selberherr, E360

    E. Strasser, S. Selberherr:
    "Algorithms and Models for Cellular Based Topography Simulation";
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14 (1995), 9; 1104 - 1114.

    More information

  672. Authors: Rudolf Strasser, E360; Siegfried Selberherr, E360

    R. Strasser, S. Selberherr:
    "Practical Inverse Modeling with SIESTA";
    IEICE Transactions on Electronics, 83-C (2000), 8; 1303 - 1310.

  673. Authors: Viktor Sverdlov, E360; Oskar Baumgartner, E360; Thomas Windbacher, E360; Siegfried Selberherr, E360

    V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
    "Modeling of Modern MOSFETs with Strain";
    Journal of Computational Electronics (invited), 8 (2009), 3-4; 192 - 208.

    More information

  674. Authors: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon";
    Semiconductors (Physics of Semiconductor Devices) (invited), 54 (2020), 12; 1713 - 1715.

    More information

  675. Authors: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
    "Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T´ Phase";
    IEEE Transactions on Electron Devices, 67 (2020), 11; 4687 - 4690.

    More information

  676. Authors: Viktor Sverdlov, E360; Al-Moatasem El-Sayed, E360; Heribert Seiler, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr:
    "Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T′ Phase";
    Solid-State Electronics (invited), 184 (2021), 10; 108081-1 - 108081-9.

    More information

  677. Authors: Viktor Sverdlov, E360; Andreas Gehring, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
    "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
    Solid-State Electronics, 49 (2005), 9; 1510 - 1515.

    More information

  678. Authors: Viktor Sverdlov, E360; Tibor Grasser, E360; Hans Kosina, E360; Siegfried Selberherr, E360

    V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
    "