Publications in Scientific Journals:
G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics,
83
(1998),
6;
3096
- 3101.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1063/1.367067
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_1998/JB1998_Kaiblinger_1.pdf
Created from the Publication Database of the Vienna University of Technology.