Talks and Poster Presentations (with Proceedings-Entry):
V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
"Analysis of HBT Behavior After Strong Electrothermal Stress";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Seattle, WA, USA;
2000-09-06
- 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2000),
ISBN: 0-7803-6279-9;
245
- 248.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2000.871254
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2001/CP2000_Palankovski_2.pdf
Created from the Publication Database of the Vienna University of Technology.