Publications in Scientific Journals:
P. Habas, S. Selberherr:
"On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling";
Solid-State Electronics,
33
(1990),
12;
1539
- 1544.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/0038-1101(90)90134-Z
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_1990/JB1990_Habas_1.pdf
Created from the Publication Database of the Vienna University of Technology.