P. Habas, J. Faricelli:
"Investigation of the Physical Modeling of the Gate-Depletion Effect";
IEEE Transactions on Electron Devices, 39 (1992), 6; S. 1496 - 1500.
http://dx.doi.org/10.1109/16.137331Elektronische Version der Publikation:
http://www.iue.tuwien.ac.at/pdf/ib_1992/JB1992_Habas_1.pdf