Publications in Scientific Journals:
P. Habas, J. Faricelli:
"Investigation of the Physical Modeling of the Gate-Depletion Effect";
IEEE Transactions on Electron Devices,
39
(1992),
6;
1496
- 1500.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/16.137331
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_1992/JB1992_Habas_1.pdf
Created from the Publication Database of the Vienna University of Technology.