Talks and Poster Presentations (with Proceedings-Entry):
T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Munich, Germany;
2004-09-02
- 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
Springer,
(2004),
ISBN: 3211224688;
295
- 298.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1007/978-3-7091-0624-2_69
Online library catalogue of the TU Vienna:
http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC04967639
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2005/CP2004_Ayalew_6.pdf
Related Projects:
Project Head Tibor Grasser:
TCAD Mikroelektronik - Christian Doppler Laboratorium Technologie-CAD in der Mikroelektronik
Created from the Publication Database of the Vienna University of Technology.