A. Gehring, S. Selberherr:
"Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004.
Projektleitung Siegfried Selberherr:
SIM