A. Gehring, S. Selberherr:
"Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08.
Project Head Siegfried Selberherr:
SIM