Publications in Scientific Journals:
A. Gehring, S. Selberherr:
"Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
IEEE Transactions on Device and Materials Reliability,
4
(2004),
3;
306
- 319.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TDMR.2004.836727
Online library catalogue of the TU Vienna:
http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC04967887
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2005/JB2004_Gehring_2.pdf
Related Projects:
Project Head Siegfried Selberherr:
SIM
Created from the Publication Database of the Vienna University of Technology.